KR20070038366A - Stack die bonding apparatus and methods of bonding using the same - Google Patents

Abstract

The present invention relates to a stack die bonding apparatus and a bonding method, the present invention comprises: a bonding stage on which a substrate is mounted; An adhesive layer applying member movably installed on the bonding stage and forming an adhesive layer on the semiconductor chip seated on the substrate; A bond head movably mounted on the bonding stage and pressing the semiconductor chip onto the semiconductor chip on which the adhesive layer is formed; A laser oscillator for emitting a laser onto the semiconductor chip through the bond head to minimize the temperature rise time required for the adhesion, and at the same time to shorten the process time for the adhesion to further improve the process efficiency, furthermore lower semiconductor chip It is possible to minimize thermal fatigue to the wire and at the same time minimize the damage to the wire bonding portion.

Description

Stack die bonding apparatus and methods of bonding using the same}

1 is a block diagram of a stack die bonding apparatus according to an embodiment of the present invention.

2 is a block diagram illustrating a bonding method according to an embodiment of the present invention.

3a, b, c, d, e, f is a view showing a bonding method according to an embodiment of the present invention.

Figure 4 is a block diagram for explaining a bonding method according to another embodiment of the present invention.

5a, b, c, d, e, f is a view showing a bonding method according to another embodiment of the present invention.

* Explanation of symbols for main parts of drawings *

100 ... control unit

110 ... Bonding Stage

120 ... bond head

130 ... substrate

140 ... Adhesive

150 ... lower semiconductor chips

160 ... Top Semiconductor Chip

170 ... laser generator

180 ... glue dispenser

The present invention relates to a stack die bonding apparatus and a bonding method, and more particularly, to a stack die bonding apparatus and a bonding method for bonding a semiconductor chip by heating and pressing using a laser.

The mounting of a semiconductor chip using a conventional die bonding apparatus is performed by a bond stage and a bond head in which a heater is built in, and the bonding process is a bonding between the semiconductor chip and the substrate by heat transferred to the semiconductor chip and the substrate. However, when a plurality of semiconductor chips are stacked and mounted, a plurality of semiconductor chips are mounted between the bond stage to which the substrate is fixed and the bond heads to which the semiconductor chips are bonded, so that the adhesive applied between the lower and upper semiconductor chips may be cured. So that effective heat transfer is difficult.

In order to overcome this, a process of curing the adhesive between the lower semiconductor chip and the upper semiconductor chip through convection heat in a convection oven or reflow equipment is required for each package. In this case, since wire bonding is already performed on the lower semiconductor chip, damage or deformation due to external factors may occur during process movement.

In addition, the conventional technology applies an adhesive medium capable of bonding between semiconductor chips to stack the lower semiconductor chip and the upper semiconductor chip. Since the medium has a property of being cured by heat, the upper semiconductor chip is placed on the lower semiconductor chip. After placement, direct or indirect heating is used, which causes thermal stress to concentrate on the underlying semiconductor chip.

Therefore, there is a problem that the reliability of the package is lowered and a separate thermal process is required for each lamination step, and thus, the process step is complicated.

In addition, since the lower semiconductor chip undergoes an additional thermal process in a wire bonded state, damage to the semiconductor chip previously wire bonded may occur.

The present invention is to solve the above problems, an object of the present invention is to minimize the temperature rise time required for the adhesion by heating using a laser for curing the adhesive, shorten the process time and thermal fatigue for the lower semiconductor chip It is to provide a stack die bonding apparatus and a bonding method that can be minimized.

Another object of the present invention related to the above object is to provide an optical system at a position spaced apart from the front end of the light guiding path and a surface of a semiconductor chip or a substrate so that the laser light can be uniformly irradiated onto the surface of the semiconductor chip. And to provide a bonding method.

Stack die bonding apparatus according to the present invention for achieving the above object is a bonding stage on which the substrate is seated; An adhesive layer applying member movably installed on the bonding stage and forming an adhesive layer on the semiconductor chip seated on the substrate; A bond head movably mounted on the bonding stage and pressing the semiconductor chip onto the semiconductor chip on which the adhesive layer is formed; And a laser oscillator for emitting a laser onto the semiconductor chip through the bond head.

The bond head may be provided with an optical system for uniformly radiating a laser beam emitted through the laser oscillator to the semiconductor chip.

Stack die bonding method according to the present invention for achieving the above object is to form an adhesive layer on the lower semiconductor chip and the substrate, the lower semiconductor chip and the substrate is in close contact, when the substrate and the lower semiconductor chip is in close contact Irradiating a laser beam to the lower semiconductor chip via a bond head to attach the lower semiconductor chip and the substrate, and form an adhesive layer between the upper semiconductor chip and the upper semiconductor chip stacked on the lower semiconductor chip, The lower semiconductor chip and the lower semiconductor chip are stacked and adhered to each other, and when the lower semiconductor chip and the upper semiconductor chip are in close contact with each other, a laser beam is applied to the upper semiconductor chip through the bond head to cause the lower semiconductor chip and the upper semiconductor chip. Can be attached.

The adhesive layer may be formed on the lower surface of each of the lower semiconductor chip and the upper semiconductor chip before the lower semiconductor chip and the upper semiconductor chip are seated.

The adhesive layer may be formed on the substrate before the lower semiconductor chip is seated on the substrate, and may be formed before the upper semiconductor chip is seated on the lower semiconductor chip.

Hereinafter, a stack die bonding apparatus according to an embodiment of the present invention will be described with reference to FIG. 1. The stack die bonding apparatus according to an embodiment of the present invention includes a bonding stage 110 on which a carrier substrate 130 is mounted.

A bond head 120 is provided on the bonding stage 110, and a laser optical system is provided on the bond head 120. A laser generator 170 is connected to the bond head 120, and the light guide path 121 guides the laser generated by the laser generator 170 to the semiconductor chips 150 and 160 through the bond head 120. ) Is formed.

One side of the bonding stage 110 is provided with an adhesive dispenser 180 for discharging a liquid adhesive as an adhesive layer applying member and a driving unit (not shown) for driving the adhesive dispenser 180. The driving unit is provided with the X-axis, the Y-axis, the Z-axis can be moved, and also implemented as a multi-joint robot rotatable to enable the injection of the adhesive 140 in the vertical direction. And the control unit 100 for controlling the bond head 120, the laser generator 170 and the dispenser driver.

Although not shown in the drawing, the bond head 120 is provided with a vacuum pressure module for allowing the bond head 120 to adsorb the semiconductor chips 150 and 160.

Here, the adhesive layer may use a film-type adhesive tape as the thermosetting resin, but is not necessarily limited thereto.

The stack die bonding apparatus according to the embodiment of the present invention may operate in two different embodiments. Hereinafter, this will be described separately.

2 is a block diagram illustrating a bonding method according to an embodiment of the present invention, Figure 3a, b, c, d, e, f is a view showing a bonding method according to an embodiment of the present invention.

As shown in FIG. 2 and FIG. 3, the bonding method according to the first exemplary embodiment seats the substrate 130 on the bonding stage 110, and also the lower semiconductor chip 150 using the bond head 120. Adsorb. In addition, the adhesive 140 is applied to the lower surface of the lower semiconductor chip 150 using the adhesive dispenser 180 (S100).

When the adhesive 140 is applied, the bond head 120 is moved to seat the lower semiconductor chip 150 on the substrate 130 so that the lower semiconductor chip 150 and the substrate 130 closely adhere to each other (S110). Subsequently, the laser is oscillated and irradiated on the upper portion of the lower semiconductor chip 150 (S120).

Then, the laser beam is converted into thermal energy in the adhesive 140 applied between the lower semiconductor chip 150 and the substrate 130 so that the adhesive 140 is heated above the curing temperature.

In this case, the bond head 120 applies a predetermined pressure to the lower semiconductor chip 150 in the vertical direction to allow for more rapid adsorption. Therefore, the lower semiconductor chip 150 and the substrate 130 are bonded to each other by pressure and heat.

After the laser beam applied to the lower semiconductor chip 150 is stopped, and the lower semiconductor chip 150 and the substrate 130 are cooled, the adhesive is reduced due to the temperature drop of the substrate 130 and the lower semiconductor chip 150. When the 140 is solidified, the lower semiconductor chip 150 and the substrate 130 are firmly adhered to each other. Then, when the vacuum for adsorption is released and the bond head 120 is damaged, the lower semiconductor chip 150 and the substrate 130 are solidified. The combination of 130 is completed.

Then, the upper semiconductor chip 160 is bonded onto the lower semiconductor chip 150. The bonding method of the upper semiconductor chip 160 and the lower semiconductor chip 150 is similar to the bonding method of the lower semiconductor chip 150 and the substrate 130 described above. Therefore, repeated description will be omitted.

After adsorbing the upper semiconductor chip 160 to the bond head 120 (S130), the adhesive 140 is applied using the adhesive dispenser 180 (S140). When the adhesive 140 is applied, the bond head 120 is moved to seat the upper semiconductor chip 160 on the lower semiconductor chip 150 so as to be in close contact with each other, and the laser oscillates on the upper semiconductor chip 160. It is irradiated (S150).

Then, the laser beam is converted into thermal energy in the adhesive 140 applied between the upper semiconductor chip 160 and the lower semiconductor chip 150 so that the adhesive 140 is heated above the curing temperature. When the bond head 120 applies a predetermined pressure to the upper semiconductor chip 160 in the vertical direction, the upper semiconductor chip 160 and the lower semiconductor chip 150 are bonded to each other by pressure and heat.

When the laser beam applied to the upper semiconductor chip 160 is stopped, and the upper semiconductor chip 160 and the lower semiconductor chip 150 are cooled, the adhesive 140 is solidified, thereby resulting in a firm adhesion between the two chips. After that, the suction vacuum is released, and the bond head 120 is raised to complete the stack die bonding operation.

4 is a block diagram for explaining a bonding method according to another embodiment of the present invention, Figure 5a, b, c, d, e, f is a view showing a bonding method according to another embodiment of the present invention.

As shown in FIGS. 4 and 5, the bonding method according to the second embodiment seats the substrate 130 on the bonding stage 110 and uses the bond head 120 to transfer the lower semiconductor chip 150. Adsorb. And the adhesive 140 is applied to the upper surface of the substrate 130 by using the adhesive dispenser 180 (S200).

Thereafter, the lower semiconductor chip 150 is seated on the dispenser on the substrate 130, and then the laser is oscillated onto the upper semiconductor chip 160 through the bond head 120 to be irradiated (S210).

Then, the laser beam is converted into thermal energy in the adhesive 140 applied between the lower semiconductor chip 150 and the substrate 130 so that the adhesive 140 is heated above the curing temperature. At the same time, the bond head 120 applies a predetermined pressure to the lower semiconductor chip 150 in the vertical direction so that the adsorption is performed more quickly. Therefore, the lower semiconductor chip 150 and the substrate 130 are bonded to each other by pressure and heat.

After the radiation of the laser beam applied to the lower semiconductor chip 150 is stopped, and the lower semiconductor chip 150 and the substrate 130 are cooled, an adhesive ( 140 is solidified, and thus firm adhesion between the lower semiconductor chip 150 and the substrate 130 is achieved. After that, the suction vacuum is released and the bond head 120 is damaged to lower the semiconductor chip 150 and the substrate ( The combination of 130 is completed.

Next, the adhesive 140 is applied to the upper portion of the lower semiconductor chip 150 through the adhesive dispenser 180 (S230). When the adhesive 140 is applied, the bond head 120 is moved to seat the upper semiconductor chip 160 on the lower semiconductor chip 150 so as to be in close contact with each other, and the laser is irradiated on the upper semiconductor chip 160. In operation S240, the upper semiconductor chip 160 and the lower semiconductor chip 150 are bonded to each other like the lower semiconductor chip 150 described above.

After the laser beam is stopped and the upper semiconductor chip 160 and the lower semiconductor chip 150 are cooled, the adhesive 140 is solidified, thereby making the two chips firmly bonded, and then releasing the vacuum for adsorption. When the bond head 120 is raised, the stack die bonding operation is completed.

In addition to the above-described embodiment of the present invention, each component may be modified by some modifications. However, if the basic components of these embodiments include the essential components of the present invention all should be considered to be included in the technical scope of the present invention.

Stack die bonding apparatus and method according to the present invention as described above to minimize the temperature rise time required for the adhesion by using a laser for curing the adhesive, and at the same time to shorten the process time for the adhesion to further improve the process efficiency, In addition, thermal fatigue to the lower semiconductor chip can be minimized and damage to the wire bonding portion can be minimized.

Claims (5)

A bonding stage on which the substrate is mounted; An adhesive layer coating member for forming an adhesive layer on the semiconductor chip seated on the substrate; A bond head for pressing the semiconductor chip onto the semiconductor chip on which the adhesive layer is formed; And a laser oscillator for emitting a laser onto the semiconductor chip through the bond head. The method of claim 1, The bond head has a stack die bonding apparatus, characterized in that the optical system for uniformly radiating the laser beam emitted through the laser oscillator to the semiconductor chip. An adhesive layer is formed on the lower semiconductor chip and the substrate, The lower semiconductor chip is brought into close contact with the substrate, When the substrate is in close contact with the lower semiconductor chip, a laser beam is irradiated onto the lower semiconductor chip via a bond head to attach the lower semiconductor chip and the substrate, Forming an adhesive layer between an upper portion of the lower semiconductor chip and an upper semiconductor chip stacked on the lower semiconductor chip, Stacking the lower semiconductor chip and the lower semiconductor chip to closely contact each other; And when the lower semiconductor chip and the upper semiconductor chip are in close contact with each other, a laser beam is applied to the upper semiconductor chip through the bond head to attach the lower semiconductor chip and the upper semiconductor chip. The method of claim 3, wherein And the adhesive layer is applied to the lower surface of each of the lower semiconductor chip and the upper semiconductor chip before the lower semiconductor chip and the upper semiconductor chip are seated. The method of claim 3, wherein And the adhesive layer is coated on the substrate before the lower semiconductor chip is seated on the substrate, and before the upper semiconductor chip is seated on the lower semiconductor chip.

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