KR20070031451A - Film forming apparatus and vaporizer - Google Patents

Abstract

A film forming apparatus having a raw material supply unit for supplying a raw material composed of a liquid or gas-liquid mixture, a raw material vaporizing unit for vaporizing the raw material to generate a raw material gas, and a film forming unit for performing the film forming process using the generated raw material gas. The filter 153 is disposed in the middle of the transport path of the source gas from the vaporization portion to the introduction portion of the film formation portion. The outer edge 153a of the filter 153 is pressed against the inner surface of the transport path over its entire circumference by an annular support member 158 that does not deform better than the outer edge 153a with respect to the load in the pressing direction. It is fixed to the inner surface of the transport path in a compressed state between the inner surface of the transport path and the support member 158.

Description

FILM FORMING APPARATUS AND VAPORIZER}

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a film forming apparatus, and more particularly, to a structure of an apparatus for forming a film using a raw material gas obtained by vaporizing a raw material in a liquid or gas-liquid mixed state such as an organic metal. Moreover, this invention relates to the vaporizer which can be used suitably for the said film-forming apparatus.

A film forming apparatus for forming a raw material gas by vaporizing a liquid raw material of an organic metal or a raw material of an organic metal dissolved in a solvent and vaporizing it with a vaporizer, and performing film formation using the raw material gas, for example, CVD (chemical vapor phase). Growth) devices are known. Typical examples of this type of film forming apparatus include MO (organic metal) CVD apparatuses, and high dielectric constant thin films such as PZT (Pb-Zr-Ti oxide) and BST (Ba-Sr-Ti oxide), metal thin films such as W, and Inp. It is used when forming a semiconductor thin film such as the above (see, for example, JP10-177971A). CVD is classified into thermal CVD, optical CVD, plasma CVD, and the like according to a method of supplying energy for causing a chemical reaction.

In the film forming apparatus described above, fine particles (hereinafter referred to simply as "particles") generated by solidification or decomposition of the raw material may occur in the transport path of the raw material gas inside the vaporizer and the film forming chamber. The particles thus generated are introduced into the deposition chamber and deposited on the substrate, resulting in deterioration of the quality of the thin film, resulting in product defects such as deterioration of the insulating properties.

To prevent this, conventionally disposing a filter at the outlet of the vaporizer (see, for example, JP7-94426A), or disposing a filter (line filter) between the gas supply source and the deposition chamber (for example , JP5-68826A). The amount of particles introduced into the film formation chamber is reduced by capturing particles flowing down from the upstream side by the respective filters so as not to flow downstream.

However, in the above method, although the particles flowing down the upstream side by the filter are captured, there is a problem that the amount of particles reaching the substrate in the deposition chamber is not sufficiently reduced. This cause is not necessarily obvious, but for example, fine particles grow on the downstream side after passing through the eye of the filter, or fine raw material droplets (remaining mist) flow into the particles on the downstream side after passing through the filter. Can be considered.

In order to prevent this, it is considered to increase the trapping efficiency of the filter by making the eye of the filter small so as to trap fine particles or raw water droplets. However, in this case, the filter is clogged in a short period of time. Therefore, in order to maintain the supply flow rate of the raw material gas, it is necessary to frequently perform maintenance maintenance (maintenance) operations such as cleaning or replacing the filter.

In addition, in the film formation chamber, deposits adhered to the inner surface of the chamber, the periphery of the susceptor, or the like may be peeled off to generate particles. For this reason, even if the particle amount which enters into a film-forming chamber from a gas supply line by a filter may be reduced, it may become useless.

This invention solves the said problem, The subject is providing the new structure which can reduce particle amount more effectively than before in the film-forming apparatus which arrange | positioned the filter in the feed path of raw material gas.

Another object of the present invention is to provide a structure that can reduce the maintenance frequency of the filter while obtaining a sufficient filter effect.

Another object of the present invention is to provide a structure in which problems caused by particles can be reduced by suppressing the amount of particles generated inside the film formation chamber.

Another object of the present invention is to provide a vaporizer having a filter capable of reducing particles.

In the film forming apparatus in which the filter is arranged in the transport path of the raw material gas as described above, the inventors of the present invention examine various causes of the decrease in the amount of particles introduced into the film formation chamber, and between the inner surface of the transport path and the filter. I found out that gas flows through the gap.

Conventional filters sandwich an outer edge of a filter material formed by pressing a metal fiber or a metal ribbon material between a pair of ring-shaped thin plates of metal from both sides of the surface back surface, and welding the outer edges of these thin plates. It is configured integrally by An attachment hole penetrating the pair of thin plate members is provided at the outer edge of the filter, and the filter is fastened to the inner surface of the transportation path by inserting a bolt through the attachment hole and screwing the inner surface of the transportation path. It is fixed. By the way, the outer edge of the filter is fixed in a state where the pair of thin plates are welded to each other as described above. Therefore, when the outer edges of the filter are fastened with bolts, the pair of thin plates are deformed locally at the fixing portions of the bolts. As a result of being pressed against the inner surface of the filter, distortion occurs at the outer edge of the filter, and at the same time, there is a lack of adhesion in the part not fixed by the bolt (ie, the part between the bolt and the bolt). The gap tends to occur between the inner surface of the transport path.

In addition, since the transport path and the filter of the source gas are always heated in order to introduce the source gas into the film formation chamber while maintaining the source gas at a high temperature, the gap is formed by the difference in the thermal expansion coefficient between the filter and the inner surface of the transport path. Is considered to be enlarged or expanded. For example, when the said filter is heated, the said part may be bent by thermal expansion of a thin plate material rather than the inner surface of a conveyance path | route, and it may be considered that the clearance gap mentioned above becomes large. In fact, the inventors have observed that the above traces of the filter and the inner surface of the transport path opposite to the filter have streaked traces (adhered streaks of deposits) passing through the source gas.

The present invention provides a film formation having a raw material supply part for supplying a raw material composed of a liquid or gas-liquid mixture, a raw material vaporization part for vaporizing the raw material to generate a raw material gas, and a film forming part for performing the film formation process using the generated raw material gas. Departure from the device. The inventors of the present application have made the following inventions as a result of various studies to prevent the occurrence of the gap.

That is, in the film forming apparatus of the first aspect, the filter is disposed in the middle of the transport path of the raw material gas from the raw material vaporization part to the introduction portion of the film forming part, and the outer edge of the filter is applied to the load in the pressing direction. The transport member is pressurized against the inner surface of the transport path over the entire circumference by an annular support member that is not deformed better than the outer edges, whereby the transport is compressed between the inner surface of the transport path and the support member. It is characterized in that it is fixed to the inner surface of the path.

According to the present invention, the outer edge of the filter can be fixed at approximately equal pressing force over the entire circumference with respect to the inner surface, and a gap can be prevented from occurring between the outer edge of the filter and the inner surface of the transport path. As a result, the raw material gas does not flow between the outer edge of the filter and the inner surface of the transport path, so that particles or micronized raw materials (residual mist) are prevented from leaking to the downstream side of the filter through the gap. It is prevented from introducing into this downstream film-forming part.

In this invention, when seen from the radial cross section of the said filter, it is preferable that the recessed part or convex part is provided in the outer edge of the said filter. According to this, the airtightness between the outer edge of a filter and the inner surface of a transport route can be improved further.

Next, in the film forming apparatus, a filter is disposed in the transport path of the raw material gas from the raw material vaporization part to the introduction portion of the film forming part, and the outer edge of the filter is located on one side of the outer edge. The inner surface of the transportation passage in a state of being pressed against the inner surface of the transportation passage by an annular support member disposed on the other side of the outer edge and through the annular sealing member which is in direct contact with the inner surface of the transportation route. And the support member is configured not to deform better than the outer edge of the filter with respect to the load in the pressing direction, and the annular seal member is deformed in the pressing direction than the outer edge of the filter with respect to the load in the pressing direction. It is characterized by being easily configured.

According to this second invention, the outer edge of the filter can be fixed at equal pressing force over the entire circumference with respect to the annular seal member, and at the same time, the outer edge of the filter and the inner surface of the transport path due to the pressing force by the support member. Since the seal member is compressively deformed between the gaps, it is possible to prevent the gap from occurring between the outer edge of the filter and the inner surface of the transport path. Therefore, since the source gas does not flow between the outer edge of the filter and the inner surface of the transport path, it is possible to prevent the particles or micronized raw material from leaking to the downstream side of the filter through the gap.

In the present invention, the outer edge of the filter is preferably composed of the filter material itself. According to this, the structure can be made simple, for example, the whole filter can be comprised integrally with a filter material, and it is not necessary to consider the airtightness between the outer edge of a filter and the filter material inside it. Therefore, the manufacturing cost of the filter can be reduced without sacrificing the filter performance. Further, by directly contacting the outer edge of the filter material with the inner surface of the transport path, the filter material is deformed into a shape conforming to the inner shape of the transport path, so that the adhesion to the inner surface of the transport path is improved. As a result, the contact portion of the filter with respect to the inner surface of the transport path can be densely constructed, so that the airtightness between the outer edge of the filter and the inner surface of the transport path can be further improved.

In the first or second invention, it is preferable that the outer edge of the filter is composed of an outer edge member made of a separate material connected without a gap to the filter material disposed inside. According to this, in the first invention, since the support member having high rigidity presses the outer edge member over its entire circumference, the outer edge member is compressively deformed to conform to the inner surface of the transport path. The airtightness between the edge and the inner surface of the transport path can be ensured. In the second invention, the outer rigid member is pressed evenly against the seal member by pressing the outer edge member over its entire circumference, so that the outer edge of the filter and the outer edge of the filter are passed through the seal member. The airtightness between the inner surfaces of the path can be secured.

In a third aspect of the present invention, in the film forming apparatus, a filter is disposed along the transport path of the raw material gas from the raw material vaporization portion to the introduction portion of the film forming portion, and the outer edge of the filter is formed by an annular outer edge member. And the outer edge member is hermetically connected to an outer circumference of the filter material disposed therein, and the outer edge member is configured to be less deformed than the filter material with respect to the load in the pressing direction, and the transport path It is characterized in that fixed to the inner surface of.

According to the present invention, the outer edge member can be fixed to the inner surface of the transport path with equal pressing force over the entire circumference, and a gap can be prevented from occurring between the outer edge of the filter and the inner surface of the transport path. . Therefore, since the source gas does not flow between the outer edge of the filter and the inner surface of the transport path, it is possible to prevent the particles or micronized raw material from leaking to the downstream side of the filter through the gap.

It is preferable that the heat-transfer part which heats the said filter contacts the part of the said inner side of the said outer edge of the said filter. According to this, since heat is transmitted to the inner part of the filter by the heat transfer part, the temperature drop of the inner part of the filter caused by the flow of source gas, vaporization of the unvaporized raw material, etc. can be reduced, and therefore the clogging of the filter is suppressed. We can do it and can reduce maintenance work.

It is preferable that the transport path of the source gas has a rising line portion extending upwardly or obliquely upward toward the film forming portion. According to this, since the transport path of the raw material gas has an upward line portion extending upwardly or obliquely upward toward the film forming portion, it is possible to suppress the particles mixed in the transport path from proceeding to the film forming portion. The amount of particles to be introduced can be reduced. Here, it is preferable to provide said rising line part between a film-forming part and the gas introduction valve which supplies and stops source gas to this film-forming part. If the upward line portion is provided in the upstream portion of the transport path of the source gas, the progress of particles generated in the downstream transport path can not be suppressed more than that, but as described above, it is closest to the film forming part of the transport path of the source gas. By providing the rising line portion in the region, it is possible to suppress the advancing of the particles generated in most of the transport paths, so that the effect of reducing the amount of particles in the film formation portion can be further enhanced.

In this case, the transport path is provided with a gas introduction valve for supplying and stopping the source gas to the film forming portion, and a purge gas at the gas introduction valve or a portion near the film introduction portion near the gas introduction valve. It is preferable that a purge line for introducing the is connected. According to this, since the residence space of the source gas (the space in the piping between the gas introduction valve and the film formation chamber) when the gas introduction valve is stopped can be eliminated or reduced, the source gas stays in the piping. If the raw material gas disappears or the source gas stays, the source gas can be rapidly and sufficiently diluted or replaced by the purge gas, so that generation of particles due to retention of the source gas in the pipe can be prevented.

It is preferable that the said film-forming part is provided with the metal shield member arrange | positioned around the mounting member provided with the film-forming area | region in which a board | substrate is mounted. According to this, since the shield member made of metal is arrange | positioned around the said mounting member (susceptor or electrostatic chuck susceptor) in a film-forming part, the heat transfer property of a shield member becomes favorable, and the deposit adhered to a shield member It does not peel easily, and generation | occurrence | production of the particle in a film-forming part can be suppressed.

It is preferable that the said film-forming part is provided with the mounting member provided with the film-forming area | region in which a board | substrate is mounted, and the several discretely arranged positioning protrusion for positioning the said board | substrate is provided in the circumference | surroundings of the said film-forming area | region. According to this, as a means for positioning a board | substrate, since several positioning protrusions are arrange | positioned around the film-forming area | region of a board | substrate, retention of the gas toward the outer peripheral side on a board | substrate can be reduced. Therefore, the amount of deposits around the film formation region can be reduced, and generation of particles in the film formation portion can be suppressed.

In this case, it is preferable that the mounting member is integrally formed with the same material in the range from the film forming region to the outside of the positioning projection, and is not covered by another member. According to this, the temperature change around the substrate decreases, the gas stays less, the flow of gas flowing radially outward is not disturbed, the amount of deposit is reduced, uniformly formed, and the deposit is peeled off well. Since no particles are generated, the generation of particles is further reduced. Here, it is preferable that the range comprised integrally with the same raw material in a mounting member and not covered by another member is extended to the position which is 30% or more of the radius of the film-forming area | region from the said positioning projection. In particular, it is more preferable that the said range is extended to the position which is 45% or more of the radius of the film-forming area | region from the said positioning projection.

In the film forming apparatus, a gas introduction valve is provided between the raw material vaporization unit and the film formation unit, and the gas introduction valve has a diaphragm valve for controlling supply of at least the source gas to the film formation unit, and the diaphragm valve is a diaphragm. It is preferable that the introduction side opening part and the extraction side opening part opened to this valve chamber are provided, and the opening area of the said introduction side opening part and the opening area of the said extraction side opening part are substantially the same.

In the film forming apparatus, a gas introduction valve is provided between the raw material vaporization unit and the film formation unit, and the gas introduction valve has a diaphragm valve for controlling supply of at least the source gas to the film formation unit, and the diaphragm valve is a diaphragm. An inlet side opening and an outlet side opening opened in the valve chamber facing each other; one opening is provided in the center of the valve chamber, the other opening is provided in the periphery of the valve chamber, and the other opening is provided. It is preferable that the shape of the opening is extended in the direction of circumference around the center of the valve chamber, or a plurality of the other openings are arranged in the direction of circumference of the center of the valve chamber.

The present invention also provides a vaporizer comprising: a vaporization vessel having a raw material vaporization space therein; a spraying part for spraying a raw material consisting of a liquid or a gas-liquid mixture in the raw material vaporization space; and the inner surface of the vaporizer so as to face the vaporized space. A raw material gas sending unit which is integrally coupled to the vaporizing container and has a raw material gas outlet for sending the raw material vaporized in the vaporizing container out of the vaporizing container, a first heating part for heating the vaporizing container, A second heating unit for heating the source gas outlet, a filter attached to the source gas outlet to cover the source gas outlet, and an outer edge of the filter so that the outer edge of the filter is in close contact with an inner surface of the source gas outlet. An annular support member that presses against an inner surface of the raw material gas sending part, and protrudes from an inner surface of the raw material gas sending part and the filter A heat transfer part that contacts a portion inside the outer edge and transfers heat generated by the second heating part to the filter, and a shielding plate disposed so as to cover the filter when viewed from the raw material vaporization space side, wherein the source gas is The annular support member is disposed at intervals between the filter so as to bypass the shield plate from the raw material vaporization space and flow into the filter, and is provided with a shield plate thermally connected to the heat transfer unit. It is formed so as not to be deformed better than the outer edge of the filter with respect to the load in the pressing direction, and is pressed against the inner surface of the raw material gas sending part over the entire circumference, whereby the outer edge of the filter is the inner surface of the raw material gas sending part. Fixed to the inner surface of the transport path in a compressed state between the support member and the support member. It provides a vaporizer, characterized in that.

According to the present invention, it is possible to significantly reduce the amount of particles in the film forming portion, and to obtain an excellent effect of improving the film forming quality.

BRIEF DESCRIPTION OF THE DRAWINGS The schematic block diagram which shows the whole structure of the film-forming apparatus which concerns on one Embodiment of this invention.

2 is a longitudinal sectional view of a raw material vaporization portion.

3A is an inner view of the gas delivery unit, and FIG. 3B is a longitudinal sectional view thereof.

4 is an enlarged partial cross-sectional view of a gas delivery unit.

5 is an enlarged partial sectional view showing another example of the configuration of a gas delivery unit;

6 is an enlarged partial cross-sectional view showing another configuration example of the gas delivery unit.

7 is an enlarged partial sectional view showing another example of the configuration of a gas delivery unit;

8 is an enlarged fragmentary sectional view showing another configuration example of the gas delivery unit.

9 is an enlarged partial sectional view illustrating another configuration example of the gas delivery unit.

10A is an enlarged partial cross-sectional view showing another configuration example of the gas delivery unit, and FIGS. 10B, 10C, and 10D are cross-sectional views showing another example of the seal member shown in FIG.

Fig. 11 is a partial sectional view showing a structure of a main portion of the film forming portion and its vicinity.

12 is an enlarged perspective view of the susceptor of the deposition unit and the positioning projections;

13 is a longitudinal sectional view showing a structure of a main part of a film forming part.

Fig. 14 is a graph showing the processing time dependence of the amount of particles in the film forming apparatus according to the embodiment of the present invention and the conventional film forming apparatus.

15 is an explanatory diagram showing preconditions when examining the influence of the height H of the descending line portion of the raw material gas transportation line.

Fig. 16 is a graph showing particle distribution by height H of the descending line portion of the raw material gas transport line.

The longitudinal cross-sectional view which shows a part of susceptor of embodiment of this invention.

18 is a plan view of a susceptor of a conventional structure.

19 is a longitudinal sectional view showing a part of a susceptor having a conventional structure.

20 is a longitudinal sectional view showing a part of a susceptor according to another embodiment of the present invention.

Fig. 21 is a partial longitudinal sectional view showing the structure of a gas introduction valve according to the embodiment of the present invention.

Fig. 22 is a partial longitudinal cross-sectional view showing a structure of a gas inlet valve according to an embodiment of the present invention in a cross section along II-II in Fig. 23.

FIG. 23 is a cross sectional view showing a structure of a gas introduction valve according to an embodiment of the present invention in a cross section taken along line III-III of FIG. 21;

24 is a cross-sectional view of a gas introduction valve of another embodiment of the present invention.

25 is a cross sectional view of a gas introduction valve of another embodiment of the present invention;

Fig. 26 is a cross sectional view of a gas introduction valve of a conventional structure;

Explanation of the sign

100... Deposition device

110... Raw material supply

110P... Fuzzy line

115... Raw material supply line

120... Raw material vaporizer

121... Raw material vaporization container

122... Spray nozzle

130... Tabernacle

131... Tabernacle Vessel

132... Gas inlet

133... Susceptor

133A... Tabernacle Area

133B... Outer zone

133P... Positioning projection

137... Shield member

138... Shield gate plate

140... Exhaust

150... Transport route

151... septum

153... filter

153a... Outer edge

154... Shielding plate

155, 157... Electric heating part

150X... Gas outlet

150A... Interior space

150B... Distribution opening

150S, 150T, 150U... Raw material gas transport line

150F... Line filter

150 V. Gas inlet valve

150Y... Valve block

150ux… Rising line part

150uy… Descending line part

H… Height

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to drawings.

[Overall Configuration of Film Deposition Device]

FIG. 1: is a schematic block diagram which shows typically the whole structure of the film-forming apparatus of this embodiment. The film forming apparatus 100 forms a film using the raw material supply unit 110, the raw material vaporization unit 120 for vaporizing the raw material supplied from the raw material supply unit 110, and the raw material gas vaporized in the raw material vaporization unit 120. The film forming section 130 to be executed, the exhaust section 140 exhausting the inside of the film forming section 130, and the source gas vaporized by the raw material vaporizing section 120 are transported to the film forming section 130. The transport route 150 is provided.

The raw material supply unit 110 includes a plurality of containers 111A to 111D, individual supply lines 112A to 112D connected to each of the plurality of containers, and flow controllers 113A to 113D respectively provided in the middle of these individual supply lines. And a raw material supply line 115 connected to a flow rate controller 114 connected to a carrier gas source for supplying Ar or other inert gas, and to which the individual supply lines 112A to 112D are connected together. have. A solvent, a liquid raw material, etc. are accommodated in the said some container 111A-111D, and these solvent or liquid raw material is pressurized by the pressurized action by the pressure gas line (the line which introduces inert gas, such as He, into a container) 110T, etc. Are sent to the individual supply lines 112A to 112D, respectively. Then, the solvent or liquid raw material controlled by the flow rate controllers 113A to 113D is extruded to the raw material supply line 115 through which the carrier gas flows.

For example, a liquid organometallic material is used to form a ferroelectric thin film of PZT (Pb [Zr _1-x Ti _x ] O ₃ ) of a perovskite crystal by the film forming apparatus 100 described above. For example, the organic solvent, such as butyl acetate, is accommodated in the container 112A, organic Pb raw materials, such as Pb (DPM) ₂ , are accommodated in the container 112B, and Zr (Ot-Bu) ₄ is contained in the container 112C. Organic Zr raw materials, such as these, are accommodated, and organic Ti raw materials, such as Ti (Oi-Pr) ₄ , are accommodated in the container 112D. The PZT thin film is formed by reacting a source gas generated from each of the above raw materials with an oxidizing agent such as NO ₂ which is a reaction gas described later. Other ferroelectric films to be formed include BST ((Ba, Si) TiO ₃ ), BTO (BaTiO ₃ ), PZTN (Pb (Zr, Ti) Nb ₂ O ₈ ), SBT (SrBi ₂ Ta ₂ O ₉ ), STO (SrTiO ₃ ), BTO (Bi ₄ Ti ₃ O ₁₂ ), and the like are exemplified.

Further, the raw material supply unit 110 includes a flow rate controller 116 and a spray gas supply line 117 for supplying spray gas such as Ar or other inert gas, and O ₂ , O ₃ , NO ₂ , NO, N ₂ O A flow rate controller 118 and a reactant gas supply line 119 for supplying an oxidative reactant gas such as this are provided. In addition, although the supply system of the spraying gas and the reaction gas supply system are comprised in the example of illustration in the raw material supply part 110, you may provide separately from the raw material supply part 110 here.

The raw material vaporization unit 120 is provided with a vaporization container 121, a spray nozzle 122 to which the raw material supply line 115 and the spray gas supply line 117 are connected, and the spray nozzle 122 is a vaporization container ( It opens in 120 A of raw material vaporization spaces comprised inside 121, and sprays the said raw material in mist form using inert gas, such as Ar gas, as spray auxiliary gas in raw material vaporization space 120A. Here, the raw material supply unit 110 is configured such that the liquid raw material is conveyed by the carrier gas in the raw material supply line 115 and is supplied to the raw material vaporization unit 120 in a gas-liquid mixed state, but the raw material supply line 115 It is good also as a structure which supplies only a liquid raw material in the process.

In the raw material vaporization space 120A of the raw material vaporization unit 120, the mist sprayed from the spray nozzle 122 is vaporized by being heated directly or indirectly by the base screen 120B to generate a raw material gas. This source gas is introduced into the internal space 150A constituted by the shielding plate 154 and the partition wall 151 of the source gas delivery unit 150X, passes through the filter 153, and passes through the source gas outlet, It is introduced into the source gas transport line 150S. The source gas transportation line 150S is connected to the source gas transportation line 150T. Here, the line filter 150F is interposed between the source gas transport line 150S and the source gas transport line 150T. However, as described later, the line filter 150F may not be prepared. The source gas transport line 150T is connected to the source gas transport line 150U via a gas introduction valve 150V, and the source gas transport line 150U is introduced into the film forming unit 130. The source gas delivery unit 150X, source gas transport line 150S, (line filter 150F), source gas transport line 150T, gas introduction valve 150V, and source gas transport line 150U The transport route of the above-mentioned raw material gas is constituted. In addition, the bypass line 140T, the transport path 150, the source gas transport lines 150S and 150U, the bypass line 140S, the exhaust line 140X, the gas inlet valve 150V, and the exhaust line 140A. The pressure regulating valve 140B is heated by a heater (not shown). In addition, the partition wall forming the film forming container 131 of the film forming unit 130 is also heated.

In addition, as shown in FIG. 1, the raw material supply part 110 is provided with the purge line 110P which flow-controls and sends inert gas and other purge gas, such as Ar gas, by the flow rate controller 110X, and this purge line 110P is connected to the feed path of source gas via the purge valve 110Y. In general, the purge line is connected to a portion near the deposition portion 130 of the raw material gas transport line, a gas introduction portion 132 of the deposition portion 130, and the like, but in the present embodiment, the purge line 110P is a source gas. Is connected to a portion at a position near the gas introduction valve 150V. More specifically, in the illustrated example, the purge line 110P is connected to a portion of the source gas transport line 150U near the gas introduction valve 150V.

The bypass line 140S is connected to the source gas transport line 150S, and the bypass line 140S is connected to an exhaust line 140X described later. In addition, the gas introduction valve 150V is connected to the bypass line 140T, and this bypass line 140T is also connected to the exhaust line 140X.

The film forming unit 130 includes a film forming container 131 having a sealable structure, a gas introducing unit 132 for supplying gas into the film forming container 131, and a susceptor for mounting a substrate to be formed into a film. 133 and a heating means 134 composed of a heating lamp for heating the susceptor 133 are provided. The source gas transport line 150U and the reaction gas supply line 119 are introduced into the gas introduction unit 132 and configured to flow the source gas and the reactant gas toward the substrate disposed on the susceptor 133. . In the case of this embodiment, the gas introduction part 132 has the showerhead structure provided with the several source gas inlet and reactive gas inlet which oppose the board | substrate mounting surface of the susceptor 133. As shown in FIG.

An exhaust line 140A is connected to the film formation container 131, and is connected to an exhaust trap 141A and a vacuum pump 142 such as a dry pump via a pressure regulating valve 140B. The vacuum pump 142 is connected to an exhaust line 140X to which the bypass lines 140S and 140T are connected via an exhaust trap 141X. In addition, the exhaust unit 140 is an exhaust line 140A, a pressure regulating valve 140B, an exhaust trap 141A, a vacuum pump 142, bypass lines 140S and 140T, an exhaust line 140X, exhaust It is comprised by the trap 141X.

The inside of the film forming container 131 of the film forming section 130 is reduced to a predetermined pressure controlled by the pressure regulating valve 140B by the exhaust section 140. In this state, the gas introducing section ( The source gas introduced by 132 reacts with the reaction gas to form a thin film on the substrate mounted on the susceptor 133. In addition, although the film-forming apparatus 100 of this embodiment is comprised as a thermal CVD apparatus, it can also be comprised as a plasma CVD apparatus. In this case, the film forming unit 130 is provided with plasma generating means such as a high frequency power supply or a matching circuit.

First embodiment

[Detailed Structure of Raw Material Vaporizer and Transport Path of Raw Material Gas]

2 is a longitudinal sectional view showing the structure of the raw material vaporization unit 120 in more detail. The raw material vaporization part 120 is provided with the heating means 123, such as a heater provided in the partition of the vaporization container 121 which partitions 120 A of said raw material vaporization spaces. The base screen 120B is heated by this heating means 123, and the inside of the raw material vaporization space 120A is also heated by the radiant heat from this base screen 120B. The opening 124 is provided in the vaporization container 121, and the filter 125 is arrange | positioned between this opening 124 and the raw material vaporization space 120A. The filter 125 may not be provided as long as the filter is provided at another place in the transport path of the source gas. Moreover, the opening part 124 is connected to the detection line 126 which attaches the pressure gauge (capacitance manometer) which is not shown in order to detect the pressure of 120 A of raw material vaporization spaces.

The raw material gas sending part 150X forms a part of the most upstream side of the "raw material gas transportation path", and is a part which sends the raw material gas vaporized in the raw material vaporization space 120A to the raw material gas transport line 150S. In the source gas sending part 150X, an inner space 150A is formed by the concave shape of the inner surface on the raw material vaporization space 120A side in the partition wall 151, and the raw material vaporization space is passed through the internal space 150A. 120A is in communication with the source gas transport line 150S. In addition, heating means 152 such as a heater is arranged inside the partition 151 (accommodating hole 151a) to heat the internal space 150A. In addition, the filter 153 and the shielding plate 154 are disposed in the interior space 150A, and the filter 153 protrudes convexly in the interior space 150A on the inner surface of the partition wall 151. The columnar heat-transfer part 155 which abuts on is provided.

In addition, the filter material which comprises the filter 153 arrange | positioned in the inner space 150A can use the breathable material which has a particle capture function, For example, it is provided with many porous materials and a pore. The raw material, a fiber, a wire, a strip material, etc. were hardened | cured (sintered) material, a mesh-shaped material, etc. are mentioned. More specifically, ultra-fine metal fibers or metal wires (for example, stainless steel) that can withstand high temperature (for example, about 180 ° C to 350 ° C, but appropriately set according to the vaporization temperature or decomposition temperature of the raw material). Filter material formed by appropriately compression-molding steel). Here, it is preferable that the diameter of the said metal fiber is about 0.01-3.0 mm. Moreover, you may use the sintering material formed by sintering the ball-shaped other particle | grains material with high heat conductivity other than a fiber, a wire, a strip material, etc .. As a constituent material of these various filter materials, nonmetal materials, such as ceramics and quartz, nonferrous metal materials, such as stainless steel, aluminum, titanium, and nickel, these alloy materials, etc. are mentioned.

FIG. 3A is a side view of the inner surface of the source gas sending part 150X seen from the raw material vaporization space 120A side, FIG. 3B is a longitudinal cross-sectional view showing a cross section taken along line BB of FIG. 3A, and FIG. 4 is a cross-sectional view of FIG. 3B. It is an enlarged partial sectional drawing which expands and shows a part. The filter 153 is disposed to cover all of the circulation cross section of the inner space 150A, and the outer edge thereof is connected and fixed in contact with the inner surface of the partition wall 151 around it. More specifically, the outer edge of the filter 153 is tightly fixed to the inner surface of the partition 151 by the fixing screw 158a via the annular support member 158. That is, as shown in FIG. 4, the fixing screw 158a is penetrated through the outer edge 153a of the support member 158 and the filter 153 and twisted into the partition wall 151 so that The support member 158 is pressed by the axial force to push the outer edge 153a of the filter 153 to the inner surface of the partition wall 151. In the example of illustration, since the support member 158 is a flat ring-shaped member, the outer edge 153a of the filter 153 can be pressed over the entire circumference. On the other hand, the outer edge 153a of the filter 153 is comprised of the filter material mentioned above similarly to the inner part other than this outer edge 153a. That is, the filter 153 includes the outer edge 153a and is made of a uniform filter material as a whole.

The support member 158 is made of, for example, stainless steel, and is configured so as not to be deformed better than the outer edge of the filter 153 with respect to the load in the pressing direction (high rigidity against the load in the pressing direction). have. The support member 158 receives local pressing force in the vicinity of the fixing screw 158a due to the axial force of the plurality of fixing screws 158a arranged at intervals in the circumferential direction, but has a sufficient rigidity. ) Is hardly bent (deformation in the pressing direction) by the local pressing force, and the contact surface of the support member 158 to the outer edge 153a of the filter 153 is kept flat and in the circumferential direction. The outer edge 153a can be pressurized uniformly. In addition, the support member 158 has a uniform structure along the circumferential direction thereof (except for the hole through which the screw described later is inserted), and as a result, the outer edge of the filter 153 can be pressed even more uniformly. Specifically, the supporting member 158 has the same cross-sectional shape in the circumferential direction and is made of a uniform material. In addition, the support member 158 is made of stainless steel like the filter 153, but the material itself is higher than that of the air permeable structure (the material hardened by pressing the porous or strip-shaped or granular material) like the filter 153. It is also high rigidity. In addition, the support member 158 is formed to be uniformly solid in its circumferential direction, whereby the outer edge 153a can be pressed evenly in the circumferential direction. In addition, the supporting member 158 is preferably formed thicker (preferably two times or more thicker) than the outer edge 153a of the filter 153, as shown in the illustrated example, thereby supporting the supporting member 158 A higher stiffness of) is achieved, and the support member 158 can press the outer edge 153a uniformly by its circumferential direction.

In the present embodiment, the outer edge 153a of the filter 153 is in a compressed state between the support member 158 and the partition wall 151. That is, by fastening the fixing screw 158a, the outer edge 153a of the filter 153 is pressed against the inner surface of the partition 151 by the highly rigid support member 158 having a uniform structure in the circumferential direction. It is fixed in the closed state, and it is in the state which crushed over the whole circumference by this.

As shown in FIGS. 3A and 3B, the heat transfer parts 155 and 157 protruding inwardly from the partition wall 151 to a part of the filter 153 other than the outer edge 153a (hereinafter, simply referred to as an “inner part”). ) Is facing. The heat transfer parts 155 and 157 formed as an integral part of the partition wall 151 have a columnar shape protruding onto the inner surface of the partition wall 151. As a result, the inner portion of the filter 153 is in thermal contact with the partition wall 151 via the heat transfer portions 155 and 157, so that the filter 153 is not only an outer edge 153a but also the heat transfer portion of the inner portion. The part facing (155, 157) also receives heat. The heat transfer parts 155 and 157 also function as a support for supporting the inner part of the filter 153. The heat transfer parts 155 and 157 are made of a metal having good thermal conductivity (for example, stainless steel, nickel, copper, chromium, aluminum and these alloys). The heat transfer section 155 is formed in a columnar shape having a long cross section, and is formed in a columnar shape having a circular cross section of the heat transfer section 157. In addition, these heat transfer parts 155 and 157 are indirectly heated by the heating means 152, such as a heater arrange | positioned in the partition 151 in the example of illustration, These heat transfer parts themselves may be comprised by the heating means, Moreover, you may embed a heating means in the heat transfer part.

In addition, a shielding plate 154 is disposed adjacent to the raw material vaporization space 120A side of the filter 153. The shield plate 154 is made of a thermally conductive material (metal material) such as stainless steel, for example. The shielding plate 154 faces the raw material vaporization space 120A, and covers the filter 153 when hidden from the raw material vaporization space 120A. A communication opening 150B is provided between the shielding plate 154 (outer edge) and the inner surface of the partition wall 151 to communicate the raw material vaporization space 120A and the internal space 150A.

The shield plate 154 is fixed to the heat transfer part 155 via the spacer 156 together with the filter 153. The spacer 156 is composed of a member having a good heat transfer property, for example, metal such as Al or stainless steel, ceramics, or the like. The fixing screw 156a is a fixing means for fixing the shield plate 154 and the spacer 156 to the heat transfer part 155. In addition, a fixing means similar to this is used to fix the filter 153 to the heat transfer portion 157. The filter 153 and the shielding plate 154 are heated by receiving conduction heat from the heating means 152 via the heat transfer portion 155 and the spacer 156, but the shielding plate 154 has a raw material vaporization space 120A. It is also heated by receiving radiant heat from the substrate screen 120B.

In this embodiment, the detection point of the temperature sensor (for example, thermocouple) 159 inserted in the hole 151b provided in the partition 151 is arrange | positioned inside the heat transfer part 155 which has the extended planar shape. Thereby, the temperature of the heat transfer part 155, that is, the temperature very close to the temperature of the filter member 153 can be detected. The output of the temperature sensor 159 is connected to a temperature control circuit (not shown), and the temperature control circuit can be configured to control the heating means 152 based on the output of the temperature sensor 159. Thus, in this embodiment, since the heating means 152 can be controlled by detecting the temperature of the heat-transfer part 155, the controllability of the temperature of the shielding plate 154 improves and the temperature of the shielding plate 154 falls. Can be reduced. In this case, the setting temperature of the heating means 152 is preferably equal to the setting temperature for the base screen 120B.

In this embodiment, the raw material supplied from the raw material supply line 115 is sprayed into the raw material vaporization space 120A by the spray nozzle 122, where the mist of the sprayed raw material is partially vaporized in flight, and the remaining part is It reaches | attains the base screen 120B heated by the heating means 123, and it heats and vaporizes there. In order to vaporize the raw material, the base screen 120B is heated by the heating means 123 to a temperature range lower than the decomposition temperature of the raw material and higher than the vaporization temperature of the raw material, for example, about 100 to 350 ° C.

Thus, the raw material gas produced | generated in the raw material vaporization space 120A is introduce | transduced into the internal space 150A from the distribution opening part 150B, avoiding the shielding plate 154. Here, the source gas introduced into the internal space 150A passes through the filter 153 and is sent to the source gas transport line 150S. Here, although the source gas introduced into the internal space 150A contains fine residual mist which is not vaporized in the raw material vaporization space 120A, these residual mists reach | attach the filter 153 and are captured, and also the heating means ( 152 is evaporated by the heat transferred to the filter 153 via the heat transfer parts 155 and 157. The filter 153 is also preferably heated to be substantially in the same temperature range as the base screen 120B.

In the present embodiment, since the outer edge 153a of the filter 153 is fixed to the inner surface of the partition 151 over the entire circumference by the support member 158 that is higher in rigidity than the outer edge 153a, The pressing force by the supporting member 158 extends to the outer edge 153a of the filter 153 uniformly over the entire circumference. Further, even when a difference in thermal expansion occurs between the partition wall 151 and the outer edge 153a of the filter 153 when heated by the heating means 152 or the like, the difference in thermal expansion between the filter 153 Since the outer edge 153a of the 153 is in a compressed state between the support member 158 and the inner surface of the partition wall 151, the close contact between the partition wall 151 and the filter 153 is well influenced by the coefficient of thermal expansion. Since it is not received, a gap is hardly formed between the outer edge 153a of the filter 153 and the inner surface of the partition 151. Therefore, it is possible to prevent the source gas or the residual mist from leaking downstream through the gap.

In particular, in the present embodiment, not only the outer edge of the filter 153 is heated, but also the inner portion of the filter 153 is directly heated via the heat transfer parts 155 and 157, so that the temperature decrease of the inner portion is reduced to evaporate. Since the efficiency can be improved, the inner portion can be prevented from being locally blocked. In addition, it is preferable that the above-mentioned heat transfer parts 155 and 157 are arrange | positioned substantially uniformly over the whole filter 153 in the flow path cross section of source gas. Thereby, the filter 153 can be heated more uniformly, the vaporization efficiency of the residual mist can be improved, and the clogging of the filter can be further reduced.

On the other hand, the shield plate 154 prevents mist sprayed from the spray nozzle 122 from reaching the filter 153 directly, so that the filter 153 is deprived of heat by a large amount of mist, and as a result, the attached mist The ability to vaporize is partially lowered at a predetermined point, causing clogging at that point, thereby preventing the supply amount of source gas from being lowered. In addition, heat is transferred to the shielding plate 154 via the heat transfer parts 155 and 157 and the shielding plate 154 is heated, so that the raw material mist in the raw material vaporization space 120A is applied to the shielding plate 154. When directly contacted, mist vaporizes even on the surface of the shielding plate 154. Thus, in this embodiment, since the raw material mist can also be vaporized also in the raw material gas sending part 150X, vaporization efficiency can be improved as a whole.

In the above embodiment, the source gas sending part 150X is configured to easily pull out the filter 153 by separating the partition wall 151 from the partition wall 121. Therefore, when a problem such as clogging occurs in the filter 153, the filter 153 can be removed and cleaned or replaced with a new filter very simply and quickly. Therefore, maintenance time is shortened and the operation rate of the device is improved. It also improves the yield.

[Other Configuration]

Next, another structural example of the attachment structure for tightly fixing the outer edge 153a of the filter 153 and the inner surface of the partition 151 will be described. Each structural example demonstrated below can be used instead of the attachment structure of said embodiment.

In the structural example shown in FIG. 5, the filter 153A is formed of an inner portion 153AX made of a filter material having air permeability through which source gas can pass, and a gap between the inner portion 153AX without welding, welding, pressing or the like. It consists of the connected outer edge member 153AY. Moreover, it is comprised similarly to the said embodiment except the filter 153A. Here, the inner portion 153AX is composed of the same filter material as described in the above embodiment, and the outer edge member 153AY is a material different from the filter material, for example, a non-hollow material. It is composed of a material which does not have breathability such as solid metal. The outer edge member 153AY has a rigidity lower than that of the supporting member 158 with respect to the load in the pressing direction (easy to deform). For example, when the outer edge member 153AY is made of the same metal as the support member 158, the outer edge member 153AY is made of a plate-like material thinner than the support member 158. The outer edge member 153AY of the filter 153A is press-fixed to the inner surface of the partition 151 over the entire circumference by the support member 158, and is in close contact with the inner surface of the partition 151. In this case, in order to improve the adhesion between the outer edge member 153AY and the partition wall 151, smoothing treatment such as polishing is performed on the surface of the outer edge member 153AY and the surface of the partition wall 151 which are in close contact with each other. It is desirable to reduce the surface roughness. In particular, it is preferable to make the flatness of both surfaces high.

In the above configuration, when the outer edge member 153AY and the support member 158 are configured to have the same rigidity, the support member 158 is omitted, and only the outer edge member 153AY is provided with the fixing screw 158a. It may be press-fixed to the inner surface of the partition wall 151 by use. In this case, since the support member 158 becomes unnecessary, the number of parts can be reduced and it can be comprised at low cost. In this case, the annular outer edge member 153AY is hermetically connected to the outer periphery of the filter material 153AX disposed inside, and has a higher rigidity than the filter material 153AX. The outer edge member 153AY is configured to have a uniform structure (cross section) in the circumferential direction thereof.

In the structural example shown in FIG. 6, the filter 153B is comprised by the filter material 153BX which has air permeability, and the outer edge member 153BY which consists of flexible plate-shaped materials, such as a metal thin plate which does not have air permeability. The outer edge member 153BY is refracted and connected to the outer edge portion without welding by welding, welding, pressing, or the like so as to sandwich the outer edge portion of the filter material 153BX. The outer edge of the filter 153B is constituted by the outer edge member 153BY and the outer edge portion of the filter material 153BX sandwiched therefrom. The outer edge of the filter 153B has a rigidity lower than that of the support member 158 with respect to the load in the pressing direction, and is compressed between the support member 158 and the partition wall 151 by the pressing force of the support member 158. Is in a state.

In the structural example shown in FIG. 7, the outer edge of the filter 153C is sandwiched between the support member 158C and the inner surface of the partition 151C and is in a compressed state. On the surface of the support member 158C which abuts on the outer edge of the filter 153C, a surface concave-convex structure 158cx is formed in a concave-convex shape in the radial direction (shown up and down) of the filter 153 and provided with a convex portion. . This surface uneven structure 158cx is formed on the inner surface of the groove portion 158cy provided corresponding to the outer edge of the filter 153C. The surface concave-convex structure 158cx of the support member 158C and the outer edge of the filter 153C are brought into close contact with each other, and the contact surface of the filter 153C is formed in the concave-convex shape in the radial direction. Moreover, the surface uneven | corrugated structure 151cx which is comprised in the uneven | corrugated shape by the radial direction of the filter 153C, and the convex part was provided also in the inner surface part of the partition 151C which abuts on the outer edge of the filter 153C. This surface uneven structure 151cx is formed in the inner surface of the groove part 151cy provided corresponding to the outer edge of the filter 153C. The surface uneven structure 151cx of the partition wall 151 and the outer edge of the filter 153C are in close contact with each other, and the contact surface of the filter 153C is formed in an uneven shape in the radial direction. In this configuration example, the convex portions of the surface concave-convex structure 151cx of the partition wall 151C and the convex portions of the surface concave-convex structure 158cx of the supporting member 158C face each other with the outer edge of the filter 153C interposed therebetween. And the outer edge of the filter 153C is locally strongly compressed by both convex portions, so that the airtightness and adhesion between the outer edge of the filter 153C and the inner surface of the partition wall 151C are further improved. It is.

In the structural example shown in FIG. 8, similarly to the structural example shown in FIG. 7, the radial surface uneven structure 158dx provided with the convex part in the surface of the support member 158D is provided, and this surface uneven structure 158dx is a filter. It is formed in the inner surface of the groove part 158dy provided corresponding to the outer edge of 153D. Moreover, the radial surface roughness structure 151dx provided with the recessed part is provided also in the inner surface part of the partition 151D. This surface asperity structure 151dx is formed in the inner surface of the groove part 151dy provided corresponding to the outer edge of the filter 153D. This configuration example differs from the previous configuration in that the convex portion of the surface concave-convex structure 158dx of the support member 158D and the concave portion of the surface concave-convex structure 151dx of the partition wall 151D intersect the outer edge of the filter 153D. The point is provided in a position facing each other. The concave portion of the surface concave-convex structure 158dx of the support member 158 and the convex portion of the surface concave-convex structure 151dx of the partition wall 151D are provided at positions facing each other with the outer edge of the filter 153D interposed therebetween. . As a result, the outer edge of the filter 153D is compressed and locally deformed toward the partition wall 151D, so that the airtightness and adhesion between the outer edge of the filter 153D and the inner surface of the partition wall 151D are further increased. Improve.

In the structural example shown in FIG. 9, the surface concavo-convex structure 153ex formed in the concavo-convex shape in the radial direction is formed in the surface of the outer edge of the filter 153E. This surface asperity structure 153ex is provided with a convex part in a part of outer edge of the filter 153E. In the example of illustration, the surface asperity structure 153ex provided with the convex part and the recessed part in the front and back both surfaces of the outer edge of the filter 153E, respectively. On the other hand, the partition 151E is provided with a groove portion 151ey at a portion corresponding to the outer edge of the filter 153E, and the support member 158 has a groove portion 158ey at a portion corresponding to the outer edge of the filter 153E. Is formed. Here, the surface uneven structure 153ex is pressed against the inner surface of the groove 158ey of the support member 158 or the inner surface of the groove 151ey of the partition wall 151 by pressure fixing by the support member 158, Thereby, since the part in which the said convex part of the surface concavo-convex structure 153ex is provided in the state strongly compressed among the outer edges of the filter 153E, the outer edge of the filter 153E and the inner surface of the partition 151E are The airtightness and adhesiveness between are improved.

In the structural example shown in FIG. 10A, the outer edge of the filter 153F is sandwiched between the support member 158F and the seal member 158G, and the seal member 158G is formed on the inner surface of the partition 151F. It is accommodated in the recessed part 151Fx provided in one part, and is fixed closely to the inner surface part. The supporting member 158F has a higher rigidity with respect to the load in the pressing direction than the outer edge of the filter 153F as in the respective configuration examples. In addition, the seal member 158G is more likely to deform in the pressing direction against the load in the pressing direction than the outer edge of the filter 153F (low rigidity). For this reason, the outer edge of the filter 153F is pressurized uniformly over the perimeter by the support member 158F. In addition, the sealing member 158G is compressed by the pressing force, and is tightly fixed to the outer edge of the filter 153F and the inner surface of the partition wall 151F.

The seal member 158G is configured to be more elastically deformed in the pressing direction than the outer edge of the filter 153F. More specifically, the seal member 158G is made of a material that is easily elastically deformed, such as synthetic rubber. In addition, the seal member 158G may be configured to be elastically deformed in the pressing direction rather than the outer edge of the seal member 153F due to its structure (cross-sectional shape), and the elastic modulus of the material itself is necessarily the filter 153F. It does not have to be lower than the modulus of elasticity of the material at the outer edge of For example, the inside of the sealing member 158H shown in FIG. 10B is hollow. In addition, the sealing member 158I shown in FIG. 10C has a cross section of a curved shape (C-shaped or U-shaped) which is partially opened. In addition, the sealing member 158 shown in FIG. 10D has a cross section of a refractive shape (co-shape) with a portion partially open. The constituent material of the seal member is preferably a metal material, in particular stainless steel, or a nonferrous metal such as aluminum, titanium, or nickel, from the viewpoint of easy heat transfer to the filter, and may be an inorganic material such as ceramic or quartz. Moreover, heat-resistant resin materials, such as various synthetic rubber, tetrafluoroethylene, other fluorine resin, and urethane resin, may be sufficient as what is easy to elastically deform.

In this configuration example, the sealing members 158G to 158J are mainly elastically deformed, thereby ensuring the airtightness and adhesion between the outer edges of the filter 153F, the sealing members 158G to 158J, and the inner surface of the partition 151F. Therefore, it is possible to reliably prevent the source gas or the residual mist from flowing between the sealing member 153F and the partition 151F.

Fig. 14 shows the number of particles having a particle diameter of 0.2 mu m or more existing on a thin film deposited on a substrate (a silicon wafer of 8 inches in diameter) by the film forming section 130 in the case of using the filter attachment structure of this embodiment. The processing time dependence of is measured. Here, the data represented by the white square is data when the line filter 150F is interposed in the middle of the source gas supply line, and the data represented by the white circle is data when the line filter 150F is not used.

As shown in FIG. 14, in this embodiment, the favorable result with extremely few particle numbers was obtained compared with the past. This is considered to be because, in the present embodiment, no gap is generated around the filter, and no leakage of particles or residual mist occurs. In addition, in this embodiment, there is also an advantage that a state in which the number of particles is small is obtained stably. In addition, in this embodiment, even if processing time passes, the particle amount hardly changes. This is because in the filter of the present embodiment, since the heat is transferred to the inner part by the heat transfer part, the temperature decrease of the inner part is small, and even if the residual mist reaches the filter, it is evaporated efficiently. Since a shielding effect is obtained, it is considered that local clogging of a filter hardly occurs. In addition, in the present embodiment, since there is almost no difference in the number of particles when the line filter 150F is not used and when it is used, the particles are formed only in accordance with the filter structure provided in the gas outlet portion 150X of the vaporizer 120. It can be seen that suppression is made.

Second embodiment

[Transport route of raw gas]

In the present embodiment, the raw material vaporization unit 120 is disposed above the film forming unit 130, and is supplied to the raw material gas transportation line 150S and the raw material gas transportation line 150T derived from the raw material vaporization unit 120. The portion of the transport path constituted is configured to reduce the bending force of the maximum force and to reduce the angle of refraction of each bending portion. The bent portion of the transport path causes the pressure loss of the line, and as the bend angle becomes larger, the pressure loss increases, which increases the possibility of pressure fluctuations in the raw gas and solidification in the pipe, thereby increasing the amount of particles generated in the transport path. As described above, it is effective to reduce the bending portion as much as possible and to reduce the bending angle as described above.

As mentioned above, although the line filter 150F does not need to be provided between source gas transport line 150S and 150T, when providing this line filter 150F, the filter arrange | positioned inside the said Like the filters 153 or 153A to 153F, it is preferable to attach using an annular support member, a seal member, or the like.

11 is a partial longitudinal cross-sectional view showing the film forming section 130 of the present embodiment. As shown in FIG. 11, the gas introduction block 150Y comprised from the said gas introduction valve 150V and the valve base block 150P fixed to the said film-forming part 130 is provided outside the film-forming part 130. As shown in FIG. . Here, the gas introduction valve 150V is constituted by two diaphragm valves and the like, and the source gas supplied by the source gas transport line 150T is either one of the source gas transport line 150U and the bypass line 140T. It is configured to be switched to one to send.

The purge line 110P is connected to the source gas transport line 150U in the gas introduction block 150Y. As described above, the purge line 110P (not shown in Fig. 11, see Fig. 1) is located near the gas introduction valve 150V in the source gas transport line 150U (gas introduction block 150Y). ) Specifically, as shown in FIG. 1, slightly downstream of the flow path switching portion of the gas introduction valve 150V (the base portion of the raw material gas transportation line 150U, the portion in the valve base block 150P in the illustrated example). Purge line 110P has joined. By this structure, in this embodiment, the piping volume (part of piping volume in the valve base block 150P) between the confluence | positioning position of the purge line 110P and the gas introduction valve 150V in the feed path of source gas. Is greatly reduced than before. For example, in the film-forming apparatus of the conventional structure, the said piping volume was 42.1 kPa (ml), and became 2.4 kPa in this embodiment. Thereby, the space which source gas stays at the time of the switching operation from the supply state of the source gas to the film-forming part 130 to a stop state can be minimized. Since the residence space is minimized, the source gas in the residence space can be easily diluted or replaced by the purge gas, thereby preventing generation of particles in the transport path due to retention of the source gas. Can be. Here, the purge line 110P may be directly connected to the inside of the gas introduction valve 150V. That is, the purge line 110P joins the flow path switching part of the gas introduction valve 150V, and the source gas transport line 150T and the source gas transport line 150U which are four flow paths by the gas introduction valve 150V. The purge line 110P and the bypass line 140T may be configured to be switchable so as to have an appropriate connection mode. In this case, since the residence space of the source gas is almost completely eliminated, generation of particles in the pipe can be more reliably prevented.

In addition, although the raw material vaporization part 120 is arrange | positioned above the film-forming part 130 in this embodiment, you may arrange | position the raw material vaporization part 120 in the vicinity of the gas introduction valve 150V. In this case, since the transport path of the source gas is shortened, the amount of particles generated in the middle of the transport path can be further reduced.

The source gas transport line 150U includes a rising line portion 150ux that is upwardly or obliquely upward from the gas introduction block 150Y (more specifically, the valve base block 150P), and the rising line portion 150U. In front of 150ux, the descending line portion 150uy extending vertically downward toward the gas introduction portion 132 of the film forming portion 130 is provided.

By providing the rising line portion 150ux as described above, even in the present embodiment, even if particles are included in the source gas transported from the gas introduction valve 150V to the film forming portion 130, the particles are raised line portion 150ux. Since it does not progress well downstream, the amount of particles introduced into the film forming portion 130 can be reduced. In particular, a high effect is obtained for the heavy (large) particles. In fact, it can be seen that, among the particles identified in the film forming unit 130, most of the particles generated in the transport path of the raw material gas and introduced into the film forming unit 130 are in the form of agglomerates in which a plurality of small particles are aggregated. . Such agglomerate particles have a large weight and a large particle diameter, and therefore do not move well downstream in the rising line portion 150ux. In addition, since a large particle of this kind has a large influence on the film formation quality, the configuration providing the rising line portion 150ux is particularly effective in that large particles can be removed.

In addition, since the rising line portion 150ux is provided downstream of the gas introduction valve 150V, that is, in the vicinity of the film forming portion 130, since most of the transport paths of the raw material gas are upstream of it, Since the advancing of the generated particle | grains can be suppressed, it is thought that the effect of reducing the particle | grain introduction amount into the film-forming part 130 becomes high.

In addition, since the base end of the rising line portion 150ux is near the gas introduction valve 150V, and the bypass line 140Y connected to the gas introduction valve 150V extends downward, it is carried along the transport path. Most of the particles that are brought out are efficiently discharged from the source gas line 150T through the bypass line 140Y via the gas introduction valve 150V at the time of the debug operation. Therefore, since particles are less likely to stay in the transport path at the time of the backing operation, it is possible to prevent the particles staying in the transport path toward the film formation section 130 during the film formation. Here, the bypass line 140Y exhausts the unstable vaporization gas (including the particles and the unremained residual mist) in the vaporizer, and is provided for the purpose of supplying a stable vaporization gas into the chamber.

In this embodiment, the height H of the descending line part 150uy extending vertically downward toward the gas introduction part 132 is fully secured. As a result, the pressure of the source gas is prevented from shifting due to the change in the inertia or the advancing direction inside the gas introduction portion 132. That is, when the height H is small, it is good for compactness (miniaturization) of the film forming unit 130, but the pressure fluctuation due to the change of inertia or flow direction of the source gas is supplied by supplying the source gas from the side (right side). As a result, the pressure distribution of the source gas is biased (unevenly) inside the gas introduction unit 132, thereby impairing the uniformity of the film forming process. Here, the above-mentioned bias (nonuniformity) becomes more remarkable as it uses the gas with a heavy specific gravity. In addition, although the said matter relates to the source gas conveyance line 150U and source gas, it is the same also about the reaction gas supply line 119 and the reaction gas.

In this embodiment, the height H of the falling line part 150uy can be largely secured by providing the rising line part 150ux. Therefore, the effect of reducing the particle introduction amount into the film-forming part 130 and the bias of the source gas to the film-forming part 130 can be acquired together. In addition, these effects are closely related to each other. FIG. 16 is a graph showing a simulation result of a flow rate distribution of gas introduced from the gas introduction section 132 into the film formation section 130 by changing the height H. FIG. Here, as shown in FIG. 15, let the introduction pipe connected to the gas introduction part 132 bend | folded the straight pipe of 11 mm of internal diameters 90 degree | times, and let the introduction pipe be heated to 210 degreeC, and uniformly previously The mixed inert gas and the organic solvent were supplied so that the flow rate Lin on the inlet side of the inlet tube was constant at 300 sccm of argon gas, and butyl acetate, the organic solvent, at 1.2 ml / min, and on the outlet side of the inlet tube. The simulation was performed with the pressure Pout set to constant at about 319.2 Pa (2.4torr). In the figure, H1 represents the distribution when the height H is 46 mm, H2 in the figure is 92 mm, and H3 in the figure is 138 mm. As shown in FIG. 16, when the height H of the falling line part 150uy was small, it turned out that the distribution of film-formation on a board | substrate also shifts similarly by the bias of the flow velocity distribution of gas. Therefore, in-plane uniformity of film-forming on a board | substrate also becomes possible by making the said height H large. In this case, since the effect regarding the said bias (uniformity) changes also with gas density etc., the said height H is set suitably according to the kind, temperature, etc. of gas. The range of the height H is preferably 60 cm or more, more preferably 80 cm or more, and in consideration of the device size, it is preferably 1000 cm or less.

In addition, the source gas transport line 150U is formed in an arc shape as a whole, and is connected to a vertically extending portion of the rising line portion 150ux and an obliquely extending portion, and a rising line portion 150ux. The connecting portion of the overending line portion 150uy has a gentle curved shape (large curvature radius). Thereby, a pressure fluctuation can be prevented in the middle of 150 U of source gas conveyance lines.

In addition, as shown in FIG. 11, in the vicinity of the film-forming part 130, the reaction gas supply line 119 is piping along the said source gas transport line 150U, and is connected to the said gas introduction part 132, have. Thereby, since the falling line part similar to the source gas transport line 150U can be provided also in the reaction gas line 119, the bias of the reaction gas in the gas introduction part 132 can be prevented. In addition, since it becomes possible to heat the reaction gas supply line 119 and the source gas transport line 150U with the common heater block (mantle heater etc.) 150H in the vicinity of the film-forming part 130, the heating structure of a line Can be configured simply. By the above structure, source gas is supplied uniformly to the gas introduction part 132, and is introduce | transduced uniformly in a processing container.

Third embodiment

[Structure of film formation part]

Next, with reference to FIGS. 11-13, the internal structure of the film-forming part 130 of this embodiment is demonstrated. As shown in FIG. 11, in the film forming unit 130, as described above, a gas introduction unit 132 is provided in a portion of the partition wall (upper portion) of the film forming container 131, and the film forming container 131 is formed from the gas introduction unit 132. The source gas and the reactant gas are introduced into the susceptor 133 inside the cell). The gas introduction unit 132 is a so-called postmix type provided with a plurality of source gas inlets 132a for introducing the source gas therein and a plurality of reaction gas inlets 132b for introducing the reaction gas therein. Has a showerhead structure. Moreover, this gas introduction part 132 has a laminated plate structure in which a plurality of plates are laminated. In the illustrated example, the gas introduction part 132 has a three-layer structure of an upper plate 132A, an intermediate plate 132B, and a lower plate 132C. Recesses 132c for providing the diffusion space of the source gas and recesses 132d for providing the diffusion space of the reaction gas are formed on the front and rear surfaces of the intermediate plate 132B, respectively. In the illustrated embodiment, the concave portion 132c is made up of a single large disc-shaped concave portion, and a plurality of circumferential convex portions 132f protrude from the bottom of the concave portion. Each convex portion 132f is in close contact with the lower surface of the upper plate 132A, whereby good thermal conductivity is secured between the intermediate plate 132B and the upper plate 132A. Similarly, the recessed part 132d consists of a single large disk-shaped recessed part, and many columnar convex parts 132g protrude from the bottom of this recessed part. Each convex portion 132g is in close contact with the upper surface of the lower plate 132C, whereby good thermal conductivity between the intermediate plate 132B and the lower plate 132C is secured. By ensuring good thermal conductivity between the plates 132A, 132B, and 132C in this manner, it becomes possible to satisfactorily control the temperature of the lower plate 132C surface (shower head surface), thereby enabling uniform film formation. The recess 132c is connected to the source gas transport line 150U and is connected to a passage extending through the upper plate 132A. The recess 132d is connected to the reaction gas supply line 119 and is connected to a passage extending through the upper plate 132A and the intermediate plate 132B. At the bottom of the recess 132c, a plurality of small portions connected to the source gas inlet 132a which extends through the intermediate plate 132B and the lower plate 132C continuously and open to the lower surface of the lower plate 132C. The passage 132a 'is connected. A plurality of small passages 132b 'are connected to the recess 132d, which extends through the lower intermediate plate 132C and are connected to the reaction gas inlet 132b which is opened on the lower surface of the lower plate 132C. . In addition, said recessed part and convex part may be formed in the side which contact | connects the intermediate plate 132B of the upper plate 132A and / or the lower plate 132C.

On the upper surface of the gas introduction portion 132, a heat dissipation portion 132e composed of a plurality of fins, a plate structure, or the like is provided. The heat dissipation unit 132e is for increasing heat dissipation efficiency when heat inside the film forming container 131 is radiated to the outside via the gas introduction unit 132. By providing this heat radiating part 132e, since the flow of heat in the gas introduction part 132 is distributed uniformly and heat dissipation efficiency improves, the gas in which the source gas inlet 132a and the reactive gas inlet 132b are provided is provided. The controllability and uniformity of the temperature of the processing space side portion (lower plate 132C) of the introduction portion 132 can be improved, and the temperature of the film formation region can be stabilized. By stabilizing this temperature, it is possible to stabilize the gas reaction, to reduce the peeling off of the deposit, and the like, so that the particles in the film forming section 130 can be reduced to form a good deposit.

The temperature sensor 132t is formed of a thermocouple or the like, and detects the temperature of the processing space side portion (lower plate 132C) of the gas introduction portion 132. The gas introduction part 132 is controlled by the temperature detected by the temperature sensor 132t by controlling heating means such as a heater (not shown) or cooling means such as a cooling fan provided on the inside or the outer surface of the gas introduction part 132. Temperature control may be performed. By doing in this way, the temperature of the process space side part (surface part of lower plate 132C) of the gas introduction part 132 can be stabilized further.

In addition, the inside of the film formation container 131 is connected to the exhaust line 140A shown in FIG. 1, and is decompressed to a predetermined pressure. In addition, a window 131p made of a light-transmitting material such as quartz is provided under the film forming container 131, and the lamp heating device 139 disposed below the window 131p rotates around the vertical axis. The receptor 133 is irradiated with light for heating. The lamp heating device 139 is configured to independently control the heat intensity (heating intensity) of the center side heating portion 139A and the heat intensity (heating strength) of the peripheral side heating portion 139B. Thereby, as mentioned later, the radial temperature profile of the susceptor 133 can be controlled suitably. An annular reflector 131q is provided above the window 131p. The reflector 131q condenses the lamp light passing through the window 131p to the susceptor 133, contributing to the efficient and uniform heating of the susceptor 133. A purge gas line 131t for supplying purge gas such as Ar or N ₂ to the space 131s partitioned by the window 131p and the susceptor 133 is connected to the bottom of the film forming container 131. . Just above the window 131p of the bottom part of the film-forming container 131, the some purge gas introduction port 131u arrange | positioned at equal intervals in the circumferential direction is opened. The purge gas line 131t and the plurality of purge gas introduction ports 131u communicate with each other through a passage (not shown) formed inside the partition wall of the film forming container 131. By supplying the purge gas to the space 131s, undesirable deposits that block the hot wire from the lamp heater 139 on the surface of the window 131p are prevented from occurring. Instead of the lamp heating device 139 described above, a resistance heating device may be used.

12 is a plan view showing the susceptor 133 and its vicinity. The substrate W is disposed on the surface of the susceptor 133. On the surface of the susceptor 133, a positioning projection 133p for positioning the substrate W is provided. In this embodiment, the some positioning projection 133p is arrange | positioned discretely (dispersed) so that the circumference | surroundings of the film-forming area | region 133A for arrange | positioning the board | substrate W may be arrange | positioned. As shown in the enlarged perspective view of FIG. 12, the positioning projection 133p is formed in the convex curved shape (arc view as viewed from the plane) of the inner side of the board | substrate W side. Here, the whole positioning projection 133P may be formed circularly or annularly by planar view. Moreover, the inner side surface of the board | substrate W side may be comprised in square shape. In addition, the positioning projection 133p may not be formed continuously in an annular shape so as to surround the substrate W, for example, a structure in which slits are provided in a plurality of locations of the annular positioning frame, and the like. What is necessary is just to form it in the state discontinuously or equally distributed in the circumference.

The susceptor 133 is supported by the support 136 which includes the support frames 136S and 136T shown in FIG. In the illustrated example, the susceptor 133 is made of SiC, the support frame 136S is made of annular quartz, and the support frame 136T is made of annular aluminum. The exhaust port 136a is an opening for exhausting the space below the susceptor 133. In addition, the protective ring 135 is mounted on the connection portion between the susceptor 133 and the support frame 136S. In addition, the hatched line shown in FIG. 12 is implemented only for the purpose of showing the range of the protection ring 135, and is not a cross-sectional display. The protective ring 135 is made of SiC. The susceptor 133 and the protective ring 135 are not limited to SiC, and may be made of other ceramic materials such as A1 ₂ O ₃ and AlN. The protective ring 135 covers the gap between the susceptor 133 and the support frame 133S, and is disposed to prevent inflow of the process gas into the susceptor back side.

Moreover, in the said embodiment, although the protection ring 135 is comprised separately from the susceptor 133, the inner extension part which extends on the support frame 136S is provided integrally in the outer peripheral part of the susceptor 133, You may comprise so that the space | interval with the support frame 136S may be covered by the inner part. In this case, since the extending portion is integrally formed, there is no need to provide the protective ring 135, and the temperature gradient on the outer circumferential side of the substrate W can be further reduced.

In the conventional structure, as shown in FIG. 18, the susceptor 133 'was provided with the positioning frame 133p' which was comprised in planar ring shape so that the film forming area | region of the board | substrate W might be enclosed. For this reason, as shown in FIG. 19, when a process gas flows from the center board | substrate W top to the outer periphery side, if there exists a slight gap between the board | substrate W and the positioning frame 133p ', the process gas will stay, Since the sediments tend to adhere to the gas stream and the turbulence flows upward due to the step edge of the positioning frame 133p ', the sediments and the positioning frame formed in the gap with the gas stream. Deposits (especially peeling pieces, etc.) on the (133p ') phase were wound up and deposited on the substrate W as particles to deteriorate film quality.

In the present embodiment, the plurality of positioning protrusions 133p are discretely arranged as described above, so that the gas introduced on the substrate W is lower than that of the conventional structure having the ring-shaped positioning frame. Since the gas tends to flow toward the circumference, gas retention is prevented, and since there is less sediment around the substrate W, it is less likely to come off and the amount of particles generated due to the rubbing of the substrate W and the sediment from each other is reduced. In addition, since the inner surface of the positioning projection 133p is formed in a convex curved shape, the flow of gas flows smoothly, so that the adhesion of the deposits around the substrate W is improved, so that the deposits and deposits of the deposits are There is effect to be less.

The surface of the susceptor 133 includes the above-mentioned film formation region 133A on which the substrate W is mounted, and the outer circumferential region 133B provided around the film formation region 133A. The positioning projection 133p is formed between the film formation region 133A and the outer circumferential region 133B. In the susceptor 133 of the present embodiment, the film formation region 133A and the outer peripheral region 133B are integrally formed of the same material. On the surface of the susceptor 133, other members are not disposed not only on the film formation region 133A on which the substrate W is to be mounted, but also on the inner peripheral side portion of the outer peripheral region 133B. In addition, the surface of the film formation region 133A of the susceptor 133 and the surface of the outer peripheral region 133B are preferably configured to have the same surface (same height). Moreover, you may be comprised so that the surface of the outer periphery area | region 133B and the surface of the board | substrate W mounted on the film-forming area 133A may become the same surface.

As shown in FIG. 18 and FIG. 19, the protection ring 135 'comprised of SiC etc. is arrange | positioned just outside the film-forming area | region 133A' on which the board | substrate W is mounted (namely, the outer side of positioning frame 133p '). Unlike the case described above, in the present embodiment, the protection ring 135 is not disposed on the inner circumferential side portion of the outer circumferential region 133B, but is disposed only on the outer edge portion of the outermost circumference of the susceptor 133. Therefore, no other member exists in the range from the film forming region 133A to the outer circumferential region 133B, so that the surface of the susceptor 133 is exposed and the surface is a plane having the same height in the above range. In addition, the surface of the outer edge portion of the susceptor 133 is lowered by the thickness of the protective ring 135, and as a result, the surface of the protective ring 135 disposed on the outer edge portion and the standing inside thereof. It is comprised so that the surface of the acceptor 133 may become substantially the same height (that is, little step | step is formed).

The susceptor 133 'is formed of a material having high thermal conductivity in order to increase the temperature uniformity of the substrate W. However, as shown in Figs. 18 and 19, the susceptor 133' is protected adjacent to the positioning frame 133p '. Since the outer edge of the substrate W is adjacent to the protection ring 135 'with the positioning frame 133p' between the rings 135 ', the substrate W is provided by the protection ring 135'. The temperature of the outer edge of the plate tends to decrease. This is because when the susceptor 133 'is heated from below by the lamp heating device 139 shown in Fig. 11, the susceptor 133' and the protection ring 135 'are only in contact or have a very fine gap. Since it is only adjacent, the thermal conductivity between the susceptor 133 'is poor, and as a result, the temperature of the protection ring 135' is lower than that of the susceptor 133 '. This lowers the temperature uniformity of the substrate W. For example, when the temperature of each part is calculated under predetermined film forming conditions in which the susceptor 133 'for the substrate W having a diameter of 200 mm is set at about 650 ° C, the protective ring 135' is 585 to 630 ° C and an average of 595. The temperature difference between the susceptor 133 'and the protective ring 135' exceeds 50 ° C. In addition, the hatched line shown in FIG. 18 was implemented for the purpose of only showing the range of the protective ring 135 ', and is not a cross-sectional display.

In this embodiment shown in FIG. 17, in the susceptor 133, an area of the susceptor 133 that is not covered with the protective ring 135 is widened, and the protective ring 135 is the susceptor 133. It covers only the outer edge of. For example, in the example of illustration, the positioning projection 133p is formed in the position 100 mm from the center, and the inner edge of the protection ring 135 is in the position 150 mm from the center.

Thus, in this embodiment, since the film forming area 133A to the outer circumferential area 133B are integrally formed of the same material, and the inner circumferential part of the outer circumferential area 133B is not covered with the protective ring, the susceptor ( The temperature of 133 is made uniform. Since the temperature fall of the inner peripheral part of the outer peripheral area 133B is suppressed especially, the adhesiveness of the deposit around the board | substrate W improves, and peeling of a deposit by temperature gradient is suppressed. Therefore, the amount of particles generated due to peeling of the deposit and the like can be further reduced. In the case of film formation with the conventional structures shown in Figs. 18 and 19, the deposits are peeled off on the positioning frame 133p 'or in the outer circumferential region 133B', and in particular, on the surface of the positioning frame 133p ', peeling of the deposits is performed. Remarkable On the other hand, when film formation was performed with the structure of the present embodiment, deposits were uniformly attached in the outer peripheral region 133B, including the positioning projections 133p, and no peeling of the deposits was observed at all.

In the present embodiment, as described above, the temperature uniformity of the outer peripheral region 133B is improved, so that the temperature distribution of the substrate W is also uniform, and the in-plane uniformity of the film formation on the substrate and the uniformity of the thin film composition are improved. In addition, since the surface of the susceptor 133 and the surface of the protective ring 135 disposed on the outer edge portion thereof are configured to have approximately the same height, a step is formed by the inner edge of the protective ring 135. It does not occur, and therefore, it does not obstruct the flow of gas, so that the uniformity of film formation can be further improved.

In order to obtain the above effect, the position of the inner edge of the protective ring 135 is larger than the radial position of the positioning protrusion 133p (or a position away from the center by the radius of the substrate W), and also of the radius of the film formation region 133A. It is preferable to set at the position spaced 30% or more outward. In particular, it is more preferable that it is set in the position spaced apart by 45% or more of the radius.

In this embodiment, in order to equalize the temperature of the film formation region 133A and the outer peripheral region 133B of the susceptor 133, the irradiation energy of the central heating portion 139A of the lamp heating device 139 and the peripheral heating portion It is configured to control the irradiation energy of 139B independently of each other. As a result, the temperature distribution of the susceptor 133 can be made more uniform. In addition, in order to achieve uniform temperature distribution, as shown in FIG. 20, the thickness d2 of the outer peripheral region 133B ″ of the susceptor 133 ″ is the thickness d1 of the film formation region 133A ″ on which the substrate W is mounted. You may form thinner than this. As a result, the surface temperature of the outer circumferential region 133B ″ of the susceptor 133 ″ tends to rise, and due to the heat running away from the outer edge of the outer circumferential region 133B ″ to the outer side (the support 136 side). The temperature gradient in the radial direction of the substrate W is reduced. In addition, in the structure shown in FIG. 20, the same code | symbol is attached | subjected to the same part as FIG. 17, and their description is abbreviate | omitted.

Moreover, the lifter pin 133q shown in FIG. 12 is for supporting the board | substrate W in the state which lifted up from the surface of the susceptor 133 at the time of carrying in and out of the board | substrate W. As shown in FIG. In FIG. 1, FIG. 11, and FIG. 13, illustration of the said lifter pin 133q and the lift drive device for mounting this to the susceptor 133 is abbreviate | omitted.

FIG. 13 is a longitudinal cross-sectional view showing a cross-sectional shape in a direction different from that of FIG. 12. 11 and 13, a cylindrical shield member 137 is detachably disposed on the inner wall side of the film forming container 131 so as to surround the susceptor 133. The shield member 137 is made of a metal material having good thermal conductivity, such as aluminum, titanium, nickel, or the like, and particularly preferably anodized on the surface of aluminum. As shown in FIG. 13, the conveyance port 131A for carrying in and carrying out the board | substrate W is formed in the side part of the film-forming container 131, This conveyance port 131A communicates with the conveyance path 131X, and a gate valve It is comprised so that opening and closing is possible by the opening-closing operation | movement of 131Y. In addition, an opening portion 137a is formed in the side wall of the shield member 137 at a position corresponding to the conveyance port 131A, and the opening portion 137a is movable (configurable to move in the vertical direction). 138) is configured to be openable and closeable. The shield gate plate 138 is configured to open and close in synchronism with the gate valve 131Y, and the shield gate plate 138 and the gate valve 131Y are opened so that the substrate W can be inserted and taken out. The shield gate plate 138 is preferably made of the same material as the shield member 137, that is, a metal material having good thermal conductivity. Since this shield member 137 is comprised so that attachment and detachment are possible, the operation rate and maintenance property improve.

Moreover, the baffle part 137b extended toward the support body 136 side protrudes and is provided in the inner surface of the shield member 137. As shown in FIG. The baffle portion 137b is a rectifying plate arranged annularly around the film formation region, and on the baffle portion 137b a rectifying hole for uniformly evacuating the inside of the film formation container 131 is provided, and the rectifying hole is a slit. It is formed in shape or round shape. As a result, the gas inside the film forming container 131 is rectified, and the gas is uniformly exhausted toward the exhaust line. Moreover, the baffle part 136b arrange | positioned at the discharge port 131A side is formed separately from the baffle part 137b. However, the baffle part 136b and 137b may be comprised integrally.

Further, purge gas such as Ar or other inert gas is introduced from the inlet 131d between the inner surface of the film forming vessel 131 and the shield member 137, and deposits do not adhere to the inner surface of the film forming vessel 131. It is configured not to. Thereby, the operation rate and maintenance property of a film-forming apparatus improve. Moreover, the introduction port 131Z for introducing purge gas, such as an inert gas, from inside the conveyance port 131X is also provided.

In the present embodiment, since the shield member 137 is made of metal, the thermal conductivity of the shield member 138 becomes good, so that the deposits adhered to the shield member 137 do not peel off well. It is possible to reduce the amount of particles generated in 131.

Fourth embodiment

[Structure of gas introduction valve]

21-23 shows the specific structure of the said gas introduction valve 150V of this embodiment. The gas inlet valve 150V has a gas inlet port 180, a gas outlet port 187, and a gas exhaust port 189. A gas inlet 180 is connected to the source gas transport line 150T, a gas outlet 187 is connected to the film forming unit 130 (specifically, a source gas transport line 150U), and a gas exhaust port. Reference numeral 189 is connected to the bypass line 140Y. An introduction passage 181 connected to the gas inlet 180 is provided therein, and the introduction passage 181 is an outlet passage provided with the gas outlet 187 by the operation of the diaphragm valve 160 ( It is comprised so that the state which communicated with the 186 and the state which is disconnected with this derivation path 186 may be taken.

Specifically, the introduction passage 181 is a valve inner space (annular) on which a valve body (diaphragm) 162 driven by a rod 161 of the diaphragm valve 160 (which operates up and down by an actuator in an upper portion of the city) faces. The opening 182 is opened to the groove 163 (see FIGS. 22 and 23), and the discharge path 186 is opened to the opening 184 with respect to the space in the valve 163. 22, the connection path 181s extending in the up-and-down direction between the introduction path 181 and the opening part 182 is comprised so that it may have the same circulation cross-sectional area as the opening area of the opening part 182, Specifically, it is configured to have the same opening shape and opening dimensions as the opening portion 182. However, when the opening area of the opening 181 is larger than the flow cross sectional area of the introduction passage 181, the portion on the side of the introduction passage 181 in the connection passage 181 s has the same circulation cross-sectional area as the introduction passage 181. It may be configured to have a cross-sectional area, and may be configured such that the flow cross sectional area gradually increases in a form that matches the opening area of the opening 181 in the vicinity of the opening 182. The annular rib 164 surrounding the said opening part 184 protrudes in the valve internal space 163, and the valve body 162 which the rod 161 drives with respect to this rib 164 abuts, and the opening part ( 184 is configured to be closed.

In addition, the introduction passage 181 is in communication with the exhaust passage 188 having the gas exhaust port 189 by the operation of the diaphragm valve 170, and any one of the states blocked from the exhaust passage 188. It is configured to take the state of. Specifically, the introduction passage 181 is opened by the opening 183 in the valve internal space 173 on which the valve body (diaphragm) 172 driven by the rod 171 of the diaphragm valve 170 faces. The exhaust path 188 is opened to the opening 185 with respect to the valve internal space 173. In addition, although the connection path between the introduction path 181 and the opening part 183 is not shown in figure, it is comprised similarly to the connection path 181s between the introduction path 181 and the opening part 182 mentioned above. The annular rib 174 which surrounds the said opening part 185 protrudes in the valve internal space 173, and the valve body 172 which the rod 171 drives with respect to this rib 174 abuts, 185 is configured to be closed.

According to the above structure, when the diaphragm valve 160 is opened and the diaphragm valve 170 is closed, the gas introduced from the gas inlet port 180 flows from the inlet passage 181 to the outlet passage 186 and the gas is drawn out. It is led toward the film forming part 130 from the sphere 187. In addition, when the diaphragm valve 160 is closed and the diaphragm valve 170 is open, the gas introduced from the gas inlet port 180 flows from the inlet passage 181 to the exhaust passage 188 and the gas exhaust port 189. Is discharged from.

In the gas introduction valve 150V of the present embodiment, the opening 182 opened in the valve internal space 163 of the diaphragm valve 160 and the opening 183 opened in the valve internal space 173 of the diaphragm valve 170. ) Are each formed in an extended shape (illustrated as a long hole), whereby the flow cross sectional area of the gas is configured not to decrease in the openings 182 and 183. In this case, the opening area of the openings 182 (183) is preferably equal to or greater than the opening area of the openings 184 (185). Specifically, the openings 184 and 185 having a circular opening shape are opened at the center of the valve internal spaces 163 and 173, and the openings 182 and circumference provided in the periphery of the valve internal spaces 163 and 173 are opened. The opening shape of 183 is a shape extended in the circumferential direction centering on the opening part 184,185. In this way, when gas flows from the introduction passage 181 to the discharge passage 186 or the exhaust passage 188 via the respective valve inner spaces of the diaphragm valves 160 and 170, the openings 182 and 183 are connected to the openings 182 and 183. As a result, the gas pressure can be fluctuated to prevent the raw material from liquefying or solidifying, thereby suppressing generation of particles.

For example, in the gas introduction valve 150V 'of the conventional structure shown in FIG. 26 (where the same part as FIG. 23 is attached | subjected with the same code | symbol), the opening shape of the opening part 182x and 183x around the space in a valve is circular. At the same time, it is necessary to keep the opening radius to some extent due to the limitation of the valve structure, so that the openings 182x and 183x of the openings 182x and 183x are larger than the flow cross-sectional areas of the introduction passage 181 and the discharge passage 186 or the exhaust passage 188. As in the case where the opening area becomes small and an orifice (shrinkage) is formed in the flow path, pressure fluctuations occur when gas passes through the openings 182x and 183x. By the way, since the said source gas (formed by vaporizing a solid or liquid organometallic material) is easy to cause liquefaction and solidification by pressure fluctuations or temperature fluctuations accompanying this, the said raw material gas to the gas introduction port 180 is mentioned above. When gas is supplied and pressure fluctuations occur in the openings 182x and 183x, droplets and solids precipitate from the source gas, thereby generating particles in the valve spaces 163 and 173. Particles generated in the valve spaces 163 and 173 pass through the derivation path as they are or collectively at any time, and are directed from the gas outlet to the film forming section 130, which causes deterioration in film formation quality.

In contrast, in the present embodiment, the openings 182 and 183 are provided with an extended opening shape, so that despite the restrictions on the valve structure, the openings 182 and 183 have the same or the same as the opening areas of the openings 184 and 195. Since the pressure fluctuation can be suppressed by opening up as mentioned above, generation | occurrence | production of the particle in the valve | bulb space 163 and 173 can be suppressed. Here, only the opening 182 provided in the valve space 163 of the diaphragm valve 160 in direct communication with the film forming section 130 may be provided with the above-described extended opening shape.

Fig. 24 is a cross sectional view showing an opening shape of the opening portion 182 'of the other embodiment. The same reference numerals are given to parts corresponding to the structure shown in FIG. The opening 182 ′ in this figure has an opening shape extending around the center of the valve space 163 around the center of the valve or along the annular groove in the valve. In this way, the opening area of the opening 182 can be set freely regardless of the constraints on the valve structure, so that generation of particles in the valve chamber can be further suppressed.

25 is a cross sectional view showing a structure for forming the opening portion 182 ″ according to another embodiment. Here, the same reference numerals are given to parts corresponding to the structure shown in FIG. A plurality of openings 182 " in this figure are arranged around the center of the valve internal space 163 (two in the illustrated example). Here, the plurality of openings 182 ″ are arranged in a direction that winds around the center of the valve internal space 163. Even in this way, it is preferable to set the total opening area by the opening 182 ″ to be equal to or larger than the opening 184. This makes it possible to further suppress the generation of particles in the valve chamber.

In particular, the peripheral openings 182 and 183 are preferably configured to have almost the same or larger opening area than the central openings 184 and 185. In this way, since the pressure fluctuations caused by these openings can be suppressed, the generation of particles can be further suppressed. However, even if the opening areas of the peripheral openings 182 and 183 and the openings of the central openings 184 and 185 are not exactly the same, it is effective if one opening area is within a range of ± 10% of the other opening area. Is obtained, in particular, a higher effect is obtained if it is in the range of ± 5%. In addition, it is preferable that the pressure fluctuation of the source gas is within ± 20% in the flow path from the introduction passage 181 to the outlet passage 186 via the valve internal spaces 163 and 173, and particularly within ± 10%. More preferably.

According to the gas introduction valve 150V, the openings 182 and 183 provided around the openings 184 and 185 disposed in the center of the valve inner spaces 163 and 173 of the diaphragm valves 160 and 170 are provided. Since the openings of the peripheral openings 182 and 183 can be sufficiently secured by the shape extending in the circumferential direction of the central openings 184 and 185 or by plural arrangement in the circumferential direction, Since the pressure fluctuation of the gas passing through the openings 182 and 183 can be suppressed, liquefaction and solidification of the source gas can be prevented, and generation of particles can be suppressed. In particular, in the case of the raw material gas obtained by evaporating a solid or a liquid raw material, a reduced pressure liquefied raw material, etc., in order to prevent condensation, solidification, etc., it is necessary to supply without a pressure difference in a supply path. Therefore, as a valve structure provided in a supply path, it is extremely preferable that it is a valve structure as mentioned above. As such a raw material, organometallic compounds containing metal elements such as Pb, Zr, Ti, Ba, Sr, Ru, Re, Hf, Ta or oxides thereof, or chlorides containing metal elements such as Ti, Ta, W, etc. And inorganic metal compounds such as fluoride and the like.

In general, in order to sufficiently secure the opening areas of the peripheral openings 182 and 183, it is necessary to reduce the opening areas of the central openings 184 and 185 or to increase the spaces in the valves 163 and 173. . However, if the opening area of the central openings 184 and 185 is made small, the flow cross sectional area of the diaphragm valves 160 and 170 decreases, and the opening sectional area of the opening passage 186 or the exhaust passage 188 is reduced. As the opening cross-sectional areas of 184 and 185 become smaller, pressure fluctuations occur, and particles are generated as described above. In addition, when the spaces 163 and 173 in the valve are enlarged, pressure fluctuations or the like are caused by the difference between the flow cross sectional area of the introduction passage 181 and the discharge passage 186 or the exhaust passage 188 and the flow cross sectional area of the valve chamber. At the same time, the entire diaphragm valves 160 and 170 are enlarged, and a large driving force is required to drive the valve bodies 162 and 172.

In the gas introduction valve 150V of the present embodiment, the opening areas of the central openings 184 and 185 are not made small and the spaces 163 and 173 of the valves are not made large. The advantage that the opening area can be increased and the pressure fluctuations and temperature fluctuations in the gas inside the diaphragm valves 160 and 170 can be suppressed is obtained.

Claims (14)

In the film-forming apparatus which has a raw material supply part which supplies the raw material which consists of a liquid or gas-liquid mixture, the raw material vaporization part which vaporizes the said raw material, and produces | generates the raw material gas, and the film-forming part which performs film-forming process using the produced said raw material gas, , A filter is disposed in the middle of the transport path of the raw material gas from the raw material vaporization part to the introduction portion of the film forming part; The outer edge of the filter is pressed against the inner surface of the transport path over its entire circumference by an annular support member that does not deform better than the outer edge with respect to the load in the pressing direction, thereby It is fixed to the inner surface of the transport path in a compressed state between the support member Deposition device. The method of claim 1, When viewed from the radial section of the filter, a concave portion or a convex portion is provided at an outer edge of the filter. Deposition device. In the film-forming apparatus which has a raw material supply part which supplies the raw material which consists of a liquid or gas-liquid mixture, the raw material vaporization part which vaporizes the said raw material, and produces | generates the raw material gas, and the film-forming part which performs film-forming process using the produced said raw material gas, , A filter is disposed in the middle of the transport path of the raw material gas from the raw material vaporization part to the introduction portion of the film forming part; The outer edge of the filter is disposed on the other side of the outer edge by an annular support member disposed on one side of the outer edge and via an annular seal member that directly contacts the inner surface of the transport path. It is fixed to the inner surface of the transport passage in a state pressed against the inner surface, The support member is configured not to be deformed better than the outer edge of the filter with respect to the load in the pressing direction, and the annular seal member is configured to be more deformable in the pressing direction than the outer edge of the filter with respect to the load in the pressing direction. Characterized by Deposition device. The method according to any one of claims 1 to 3, The outer edge of the filter is characterized in that the filter material itself Deposition device. The method according to any one of claims 1 to 3, The outer edge of the filter is characterized by consisting of an outer edge member made of a separate material connected without a gap to the filter material disposed inside. Deposition device. In the film-forming apparatus which has a raw material supply part which supplies the raw material which consists of a liquid or gas-liquid mixture, the raw material vaporization part which vaporizes the said raw material, and produces | generates the raw material gas, and the film-forming part which performs film-forming process using the produced said raw material gas, , A filter is disposed in the middle of the transport path of the raw material gas from the raw material vaporization part to the introduction portion of the film forming part; The outer edge of the filter is constituted by an annular outer edge member, The outer edge member is hermetically connected to an outer circumference of the filter material disposed therein, The outer edge member is configured not to deform better than the filter material with respect to the load in the pressing direction, and is fixed to the inner surface of the transport path. Deposition device. The method according to any one of claims 1 to 6, The heat transfer part for heating the filter is in contact with a portion inside the outer edge of the filter.  Deposition device. The method according to any one of claims 1 to 7, The source gas transport path has a rising line portion extending upwardly or obliquely upward toward the film forming portion. Deposition device. The method according to any one of claims 1 to 8, The transport path is provided with a gas introduction valve for supplying and stopping the source gas to the film forming portion, and for introducing purge gas into the gas introduction valve or to the portion near the film introduction portion near the gas introduction valve. Characterized in that the purge line is connected Deposition device. The method according to any one of claims 1 to 9, The said film-forming part is provided with the metal shield member arrange | positioned around the mounting member which has a film-forming area | region in which a board | substrate is mounted, It is characterized by the above-mentioned. Deposition device. The method according to any one of claims 1 to 9, The film forming portion is provided with a mounting member having a film forming region on which a substrate is mounted, and a plurality of discretely arranged positioning protrusions for positioning the substrate are provided around the film forming region. Deposition device. The method according to claim 10, The mounting member is integrally formed of the same material in a range from the film forming region to the outside of the positioning projection, and is not covered by another member. Deposition device. In the carburetor, A vaporization container having a raw material vaporization space therein, A spraying unit for spraying a raw material composed of a liquid or a gas-liquid mixture in the raw material vaporization space; A raw material gas sending part having a raw material gas discharge port which is integrally coupled to the vaporization container so that an inner surface thereof faces the vaporization space, and which vaporizes the raw material vaporized in the vaporization container to the outside of the vaporization container; A first heating unit for heating the vaporization container; A second heating part for heating the raw material gas sending part; A filter attached to the raw material gas sending part so as to cover the raw material gas outlet; An annular support member for pressurizing the outer edge to the inner surface of the raw material gas sending part such that the outer edge of the filter is in close contact with the inner surface of the raw material gas sending part; A heat transfer part that protrudes from an inner surface of the raw material gas sending part and contacts a portion inside the outer edge of the filter and transmits heat generated by the second heating part to the filter; A shielding plate disposed to cover the filter as viewed from the raw material vaporization space side, wherein the shielding plate is disposed at intervals from the raw material gas so as to bypass the shielding plate from the raw material vaporization space and flow into the filter. And a shield plate thermally connected to the heat transfer unit at the same time,  The annular support member is formed so as not to be deformed better than the outer edge of the filter with respect to the load in the pressing direction, and pressed against the inner surface of the raw material gas sending part over the entire circumference, whereby the outer edge of the filter It is fixed to the inner surface of the transport path in a compressed state between the inner surface of the source gas sending portion and the support member. carburetor. In the film-forming apparatus which has a raw material supply part which supplies the raw material which consists of a liquid or gas-liquid mixture, the raw material vaporization part which vaporizes the said raw material, and produces | generates the raw material gas, and the film-forming part which performs film-forming process using the produced said raw material gas, , Said raw material vaporization part is equipped with the vaporizer | carburetor of Claim 13. Deposition device.

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