KR20070030671A - Wiring board and method for manufacturing the same, and semiconductor device - Google Patents

Abstract

The insulating base material 1, the some conductor wiring 2a, 2b, and the protrusion electrode 3 formed in each conductor wiring are provided, and the electrode pad and conductor wiring of a semiconductor element can be connected through a protrusion electrode. The conductor wiring is connectable with an external component in the connection terminal part 11 of the opposite side to the protrusion electrode side, and the 1st conductor wiring 2a in which the protrusion electrode was formed in the semiconductor element mounting area 12, respectively. And the second conductor wiring 2b. In the first conductor wiring, the wiring extends from the protruding electrode to the connecting terminal portion, and the second conductor wiring extends out of the semiconductor element mounting region to the region which does not reach the connecting terminal portion and extends out of the semiconductor element mounting region. The end part is electrically separated from the first conductor wiring by the cutting portion 13 formed in the boundary region with the first conductor wiring. Regardless of the state of use of the electrode pads on the semiconductor element to be mounted, the protruding electrodes can be arranged at equal intervals.

Description

WIRING BOARD AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE}

1 is a plan view showing a part of a tape carrier substrate in Embodiment 1 of the present invention;

2A to 2C are plan views of a part of the tape carrier substrate showing the manufacturing process of the tape carrier substrate;

3 is a plan view showing a part of a tape carrier substrate in Embodiment 2 of the present invention;

4 is a plan view showing a state in a part of the manufacturing process of the tape carrier substrate;

5 is a sectional view showing a part of a semiconductor device of a conventional example;

6 is a plan view showing a part of the tape carrier substrate;

7 is a plan view of a semiconductor device,

8A to 8C are plan views of a part of the tape carrier substrate showing the manufacturing process of the tape carrier substrate according to the prior art;

9 is a plan view showing a part of a tape carrier substrate of another conventional example.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board such as a tape carrier substrate used for a chip on film (COF), a manufacturing method thereof, and a semiconductor device in which the wiring board is bonded to a semiconductor element.

As a kind of package module using a film base material, a chip on film (COF) is known. 5 is a cross-sectional view showing a part of an example of COF. The COF has a structure in which a semiconductor element 6 is mounted on a tape carrier substrate produced using a flexible insulating film base material 1 and protected by a sealing resin 7, for example, a flat panel display ( It is mainly used as a driver for driving flat panel displays.

The main elements of the tape carrier substrate include an insulating film base material 1, a conductor wiring 2 formed on the surface thereof, and a projection electrode (bump) 3 formed on the conductor wiring. If necessary, a metal plating film 8 is formed on a part of the conductor wiring 2 and the protruding electrode 3, and a layer of the solder resist 9 which is an insulating resin is formed on the other part of the conductor wiring 2. . Generally, polyimide is used as the film base material 1 and copper is used as the conductor wiring 2.

The conductor wiring 2 is connected via the electrode pad 10 on the semiconductor element 6 and the projection electrode 3. As a connection method, after apply | coating sealing resin to the semiconductor mounting part on the film base material 1, the electrode pad 10 of the semiconductor element 6 and the protrusion electrode 3 of a tape carrier board | substrate are made to oppose, and an ultrasonic wave, a heat, and a pressure are carried out. It is common to use the application of. 6 is an example of a plan view of a tape carrier substrate before semiconductor element mounting, and FIG. 7 is an example of a plan view of the semiconductor element 6. The protruding electrode 3 of the tape carrier substrate is formed at a position corresponding to the electrode pad 10 of the semiconductor element 6 (for example, see Japanese Patent Laid-Open No. 2004-327936).

The conductor pattern 4 for electric power feeding is formed in the circumferential edge of the film base material 1. The cutting | disconnection area | region 5 is formed in the vicinity of the boundary of the conductor wiring 2 and the conductor pattern 4 for electric power feeding. The conductor wiring 2 and the conductor pattern 4 for power supply are connected at the beginning of formation, and in the process of electroplating for forming the protruding electrode 3, the conductor wiring 2 is provided through the conductor pattern 4 for power supply. Feeding is performed for. After formation of the protruding electrode 3, the cutting region 5 is formed to electrically separate the conductor wiring 2 and the conductor pattern 4 for power supply.

Hereinafter, the manufacturing method of the conventional tape carrier board | substrate is demonstrated using FIGS. 8A-8C. 8A to 8C are plan views showing a conventional tape carrier substrate manufacturing step, and each shows a planar state of the tape carrier substrate in each step of production.

First, as shown in FIG. 8A, the conductor pattern 4 for power supply is used, using the film base material 1 to which the some conductor wiring 2 and the conductor pattern 4 for power supply used for electroplating were electrically connected. Electroplating is carried out to form the protruding electrode 3 as shown in Fig. 8B.

Next, as shown to FIG. 8C, the cut | disconnected area | region 5 is formed and the conductor wiring 2 and the electrically conductive conductor pattern 4 are isolate | separated electrically. Thereby, the tape carrier board | substrate with which the protrusion electrode 3 was formed on each electrically independent conductor wiring 2 is obtained.

In addition, the connection terminal part 11 is a partial area | region of the conductor wiring 2 used for connection with external components, such as a flat panel. In general, the electrical separation between the conductor wiring 2 and the conductor pattern 4 for power feeding is performed by punching the tape carrier substrate in a region other than the connection terminal portion 11.

In addition, although not shown in figure, formation of a metal plating film or a soldering resist may be performed timely during or after the process of FIGS. 8A-8B.

Due to the variety of panel sizes, fineness, and the like of recent flat panel displays, the number of connection terminals with a flat panel, that is, an output terminal of a semiconductor device, in a COF which is a semiconductor device is also increasing. As a result, when the semiconductor device prepares each semiconductor element corresponding to the number of different output terminals, the type of the semiconductor element increases, which leads to an increase in development cost and complicated management of the semiconductor element during mass production.

Therefore, in the case of a semiconductor device requiring the same electrical function, even if the number of output terminals is different, it is better to use the same semiconductor element for production efficiency. However, when the semiconductor elements are commonized, the following problems arise when the number of connection terminals with external components (flat panel) in the semiconductor device is smaller than the number of electrode pads of the semiconductor element.

9 is an example of a tape carrier substrate when the number of connection terminals with external components of the semiconductor device is smaller than the number of electrode pads of the semiconductor element. The number of the protruding electrodes 3 corresponds to the number of connecting terminals with external components. As shown, since the number of connecting terminals with external components of the semiconductor device is smaller than the number of electrode pads of the semiconductor element, the protrusion electrodes 3 are not evenly arranged and the protrusion electrodes 3 are not disposed. The space | interval of the projection electrode 3 is large.

When the projection electrodes 3 cannot be formed at equal intervals in this manner, due to the nonuniformity of the arrangement of the projection electrodes 3, the amount of plating growth tends to vary when plating the growth of the projection electrodes 3, When the semiconductor element is mounted, the stress is concentrated at a part of the position, and connection failure is likely to occur.

On the other hand, as shown in FIG. 9, in the connection terminal part 11 with external components, the arrangement | positioning of the conductor wiring 2 is designed at the same space | interval for efficiency of area. Therefore, even when the projection electrode (dummy projection electrode) corresponding to the unused electrode pad (dummy electrode pad) on a semiconductor element is formed, and the projection electrode 3 is to be arrange | positioned at equal intervals, such a projection electrode is not made. It was difficult to design the conductor wiring to form by connecting to the conductor pattern for electrical power feeding.

The present invention is to provide a wiring board which can arrange the protruding electrodes at equal intervals regardless of the state of use of the electrode pad on the semiconductor element to be mounted, and can suppress the occurrence of stress concentration when mounting the semiconductor element. The purpose.

The wiring board of this invention is equipped with an insulating base material, the some conductor wiring provided on the said insulating base material, and the protruding electrode formed in each said conductor wiring, The electrode pad of a semiconductor element and the said conductor wiring interpose through the said protruding electrode. And the conductor wiring is configured to be connectable with external components in a connection terminal portion at an end opposite to the end where the protrusion electrode is formed, and the conductor wiring is placed in a semiconductor element mounting region in which the semiconductor element is to be mounted. A first conductor wiring and a second conductor wiring each having the protruding electrode formed thereon, wherein the first conductor wiring includes a wire extending from the protruding electrode to a connection terminal portion with the external component, and the second conductor wiring includes: A region outside the semiconductor element mounting region but not reaching the connecting terminal portion from the protruding electrode Extending support, and an end portion extending out of the semiconductor element mounting region, is formed by a cutout in the border area between the first conductive wiring is electrically isolated from the first conductor wiring.

The manufacturing method of the wiring board of this invention is equipped with the insulating base material, the some conductor wiring provided on the said insulating base material, and the protruding electrode formed in each said conductor wiring, The electrode pad of the semiconductor element, and the said conductor wiring are the said protrusion. It is connectable via an electrode, and the said conductor wiring is a method of manufacturing the wiring board which can be connected with an external component in the connection terminal part of the edge part on the opposite side to the edge part in which the said projection electrode was formed. In this manufacturing method, a 1st conductor wiring and a 2nd conductor wiring are formed as said conductor wiring on the said insulating base material, and the said 1st conductor wiring is a connection terminal part with the said external component from the position where the said projection electrode is formed. The second conductor wiring extends from the position where the protruding electrode is formed to the region outside the semiconductor element mounting region and does not reach the connection terminal portion, and is electrically connected to the first conductor wiring. A conductor wiring laying substrate is used. Electroplating is performed by feeding through the second conductor wiring to form the protruding electrode on the first conductor wiring and the second conductor wiring, and electrically connects the first conductor wiring and the second conductor wiring. A cut is formed to separate.

According to the present invention, the conductor wiring includes a first conductor wiring and a second conductor wiring each having protrusion electrodes formed in the semiconductor element mounting region where the semiconductor element is to be mounted. In the first conductor wiring, a wiring extends from the protruding electrode to the connection terminal portion with the external component, and the second conductor wiring is an area outside the semiconductor element mounting region from the protrusion electrode and does not reach the connection terminal portion. Extends. An end portion extending out of the semiconductor element mounting region is electrically separated from the first conductor wiring by a cutout formed in a boundary region with the first conductor wiring. With this configuration, the projection electrodes are provided at equal intervals, including positions corresponding to the electrode pads on the unused semiconductor elements, and the formation state of the projection electrodes is uniform, so that stress concentration when mounting the semiconductor elements is alleviated. Thus, a reliable semiconductor device can be obtained.

In the wiring board of this invention, the said cutting part of a said 2nd conductor wiring can be set as the structure which is a hole part formed in the said insulating base material.

Moreover, the said 2nd conductor wiring arrange | positioned at the opposing both sides of the said semiconductor element mounting area | region can be set as the structure connected with each other.

In the manufacturing method of the wiring board of this invention, formation of the said cut part can be performed by punching the said stretchable base material. Alternatively, the cutting section can be formed by cutting the first conductor wiring and the second conductor wiring by laser cutting.

The semiconductor device which has the wiring board of any one said structure, and the semiconductor element mounted in the said semiconductor element mounting area | region can be comprised, and the electrode pad of the said semiconductor element and the said conductor wiring were connected through the said projection electrode. .

This semiconductor device WHEREIN: The said cutting part is formed by punching the said insulating base material, and the said cutting part can be set as the structure formed outside the area | region of the sealing resin which protects the said semiconductor element.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings. In addition, the same code | symbol is attached | subjected about the element same as the component shown in the figure of the said prior art example, and the description is abbreviate | omitted for some description.

(Embodiment 1)

The structure of the tape carrier substrate (wiring substrate) in Embodiment 1 is demonstrated with reference to the top view of a part of tape carrier substrate shown in FIG.

As shown in FIG. 1, on the film base material (insulating base material) 1, the some conductor wiring 2a, 2b is provided in alignment, and the electrode pad on a semiconductor element in the conductor wiring 2a, 2b. At the position corresponding to the projection electrode 3, the projection electrode 3 is provided. 12 shows a semiconductor element mounting area.

The conductor wirings 2a and 2b are divided into the first conductor wiring 2a and the second conductor wiring 2b. The 1st conductor wiring 2a is used for the connection with an external component as usual. The second conductor wiring 2b corresponds to the dummy electrode pad of the semiconductor element, but is not used for connection with external components. In the 1st conductor wiring 2a, wiring extends from the area | region of the projection electrode 3 to the connection terminal part 11 connected with external components. The second conductor wiring 2b extends outside the semiconductor element mounting region 12 from the region of the projection electrode 3, but does not extend to the connection terminal portion 11. As described later, the second conductor wiring 2b is connected to the first conductor wiring 2a at the beginning of formation, but is finally electrically connected to the first conductor wiring 2a by the cutting region 13. It is separated.

When the semiconductor element is mounted on the tape carrier substrate having the above structure, the first conductor wiring 2a corresponds to the terminal used for the output signal of the semiconductor device, and the second conductor wiring 2b is connected to the terminal not used for the output signal. To match. Even if there is conductor wiring not used in this manner, since the protruding electrodes 3 are provided at equal intervals, the shape of the protruding electrodes 3 is formed in the same manner. Therefore, stress concentration at the time of mounting a semiconductor element on a tape carrier board | substrate is alleviated, and it can provide a reliable semiconductor device.

Here, the edge part of the 2nd conductor wiring 2b outside the semiconductor element mounting area | region 12 is located in the hole part of the film base material 1 formed as the cutting | disconnection area | region 13. As shown in FIG. According to such a structure, the stress which the film base material 1 receives at the time of semiconductor element mounting can be alleviated.

Hereinafter, the manufacturing method of the tape carrier board | substrate of the said structure is demonstrated with reference to FIG. FIG. 2 shows a manufacturing process of the tape carrier substrate, and FIGS. 2A to 2C are plan views showing a part of the state of the tape carrier substrate in the manufacturing process, respectively.

(First process)

First, as shown in FIG. 2A, the film base material 1 (insulating base material) in which several conductor wirings were arrange | positioned is prepared. The conductor wiring consists of the first conductor wiring 2a and the second conductor wiring 2b. The wiring of the 1st conductor wiring 2a extends from the area | region in which a protruding electrode is formed, to the connection terminal part 11 connected with an external component in the subsequent process, and is connected to the conductor pattern 4 for power supply. The second conductor wiring 2b extends outside the semiconductor element mounting region 12 from the region where the protruding electrode is formed, but does not extend to the connection terminal portion 11. The second conductor wiring 2b is connected to the first conductor wiring 2a.

(Second process)

As shown in FIG. 2B, the protruding electrode 3 is attached to the front end portions of the first conductor wiring 2a and the second conductor wiring 2b by performing electroplating by feeding power through the power supply conductor pattern 4. Form. The protrusion electrode 3 is disposed at a position corresponding to the electrode pad of the semiconductor element mounted in the semiconductor element mounting region 12.

(Third process)

As shown in FIG. 2C, a part of the first conductor wiring 2a and the second conductor wiring 2b is deleted to form the cut regions 5 and 13. By the cutting | disconnection area 13, the connection part of the 1st conductor wiring 2a and the 2nd conductor wiring 2b is isolate | separated electrically.

According to the above manufacturing method, since the protrusion electrode 3 can be formed also in the position corresponding to the unused semiconductor element electrode pad, the protrusion electrode 3 can be designed at equal intervals. As a result, the shape of the protruding electrode 3 can be formed without variation by electroplating. Therefore, stress concentration at the time of mounting a semiconductor element on a tape carrier substrate can be alleviated, and a reliable semiconductor device can be obtained.

In the said manufacturing method, as shown to FIG. 2C, the process of forming the cutting | disconnection area | region 13 which electrically isolates the 1st conductor wiring 2a and the 2nd conductor wiring 2b is performed by 1st conductor wiring ( It is more efficient to carry out as the same process as the process of forming the cutting | disconnection area | region 5 which isolates 2a) and the conductor pattern 4 for electric power feeding.

Moreover, as a process of forming the cutting | disconnection area | region 13 shown in FIG. 2C, the method of punching every tape carrier board | substrate with a metal mold | die, or the method of cutting at least conductor wiring with a laser can be used. In particular, when punching each tape carrier substrate by a metal mold | die, since there exists a process of apply | coating the sealing resin which protects a semiconductor element in a later process, it is better to perform punching outside the area | region which forms the sealing resin which protects a semiconductor element. .

In addition, although not shown, the process of forming the cutting | disconnection area | region 13 which electrically isolates the 1st conductor wiring 2a and the 2nd conductor wiring 2b shown by FIG. 2C must necessarily be performed before semiconductor element mounting. It may be carried out in a state after mounting of a semiconductor element which requires proper electrical characteristics.

By the wiring board of the above embodiment, it becomes easy to respond to one type of semiconductor element with respect to the form of the number of various output terminals as a semiconductor device, and the development cost is reduced.

(Embodiment 2)

3 is a plan view showing a part of the tape carrier substrate in the second embodiment. FIG. 4 is a plan view showing a state corresponding to the process shown in FIG. 2A in the first embodiment of the manufacturing process for producing the tape carrier substrate. FIG.

This embodiment is a structure when the dummy electrode pad exists in the opposing both sides in a semiconductor element. Therefore, some of the protruding electrodes 3 formed at the left and right opposing positions in the semiconductor element mounting region 12 are not used for connection with external components, and the corresponding second conductor wiring 2c is shown in FIG. 1. It is formed similarly to the 2nd conductor wiring 2b in Embodiment 1 of the present invention.

The 2nd conductor wiring 2c is formed in the state in which the conductor wiring of the both sides in which the left and right protrusion electrode 3 corresponding to the dummy electrode pad was formed was connected to each other. That is, two projection electrodes 3 are arranged in one second conductor wiring 2c.

The second conductor wiring 2c has the same configuration and function as the second conductor wiring 2b in FIG. 1. That is, although it extends out of the semiconductor element mounting area | region 12 from the area | region of the projection electrode 3, it does not extend to the connection terminal part 11. As shown in FIG. However, as shown in FIG. 4, before the projection electrode is formed, it is connected to the first conductor wiring 2a and is fed through the first conductor wiring 2a and the power supply conductor pattern 4 on the connected side. Electroplating is carried out. After the protruding electrode 3 is formed, the cutting region 13 is formed as shown in Fig. 3, so that the second conductor wiring 2c is electrically separated from the first conductor wiring 2a.

In the area | region on the right side of the semiconductor element mounting area | region 12, the 2nd conductor wiring 2c is not connected with the 1st conductor wiring 2a from the beginning.

The wiring board according to the present invention can arrange the protruding electrodes at equal intervals regardless of the state of use of the electrode pads on the semiconductor element to be mounted, and can suppress the occurrence of stress concentration when mounting the semiconductor element.

Claims (8)

An insulating base material, a plurality of conductor wirings provided on the insulating base material, and protruding electrodes formed on the respective conductor wirings, wherein an electrode pad of the semiconductor element and the conductor wiring can be connected via the protruding electrode; The wiring is a wiring board which can be connected with an external component in the connection terminal part of the edge part on the opposite side to the edge part in which the said projection electrode was formed, The conductor wiring includes a first conductor wiring and a second conductor wiring each having the protruding electrode formed in a semiconductor element mounting region in which the semiconductor element is to be mounted. In the first conductor wiring, a wiring extends from the protruding electrode to the connection terminal portion with the external component, and the second conductor wiring is an area outside the semiconductor element mounting region from the protrusion electrode and does not reach the connection terminal portion. An end portion extending up to and extending out of the semiconductor element mounting region is electrically separated from the first conductor wiring by a cutout formed in a boundary region with the first conductor wiring. The method according to claim 1, The wiring board of the said 2nd conductor wiring is a hole part formed in the said insulating base material. The method according to claim 1, The wiring board of which the said 2nd conductor wiring arrange | positioned at the opposing both sides of the said semiconductor element mounting area | region is connected to each other. An insulating base material, a plurality of conductor wirings provided on the insulating base material, and protruding electrodes formed on the respective conductor wirings, wherein an electrode pad of the semiconductor element and the conductor wiring can be connected via the protruding electrode; In the method of manufacturing the wiring board which can be connected with an external component in the connection terminal part of the edge part on the opposite side to the edge part in which the said projection electrode was formed, On the insulating base, a first conductor wiring and a second conductor wiring are formed as the conductor wiring, and the first conductor wiring has a wire extending from a position where the protruding electrode is formed to a connection terminal portion with the external component. And the second conductor wiring extends from a position where the protruding electrode is formed to a region outside the semiconductor element mounting region where the semiconductor element is to be mounted and does not reach the connection terminal portion, and is electrically connected to the first conductor wiring. Using a substrate, Electroplating by power feeding through the second conductor wiring to form the protruding electrode on the first conductor wiring and the second conductor wiring, A cutout portion for electrically separating the first conductor wiring and the second conductor wiring is formed. The method according to claim 4, The manufacturing method of the wiring board which forms the said cut part by punching the said insulating base material. The method according to claim 4, The manufacturing method of the wiring board which forms the said cutting part by cutting | disconnecting the said 1st conductor wiring and the said 2nd conductor wiring by a laser cut. A semiconductor device provided with the wiring board of Claim 1, and the semiconductor element mounted in the said semiconductor element mounting area | region, and the electrode pad of the said semiconductor element and the said conductor wiring were connected through the said protruding electrode. The method according to claim 7, The said cutting part is formed by punching the said insulating base material, and the said cutting part is formed outside the area | region of the sealing resin which protects the said semiconductor element.

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