KR20070028579A - 페이스트 조성물 및 그것을 이용한 태양 전지 소자 - Google Patents
페이스트 조성물 및 그것을 이용한 태양 전지 소자 Download PDFInfo
- Publication number
- KR20070028579A KR20070028579A KR1020077001755A KR20077001755A KR20070028579A KR 20070028579 A KR20070028579 A KR 20070028579A KR 1020077001755 A KR1020077001755 A KR 1020077001755A KR 20077001755 A KR20077001755 A KR 20077001755A KR 20070028579 A KR20070028579 A KR 20070028579A
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- semiconductor substrate
- type silicon
- silicon semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/08—Metals
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Dispersion Chemistry (AREA)
- Sustainable Development (AREA)
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Abstract
Description
금속 알콕시드 | 유리 프릿 (질량%) | 첨가 입자 [종류] (질량%) | 특성 | |||||||
에틸 실리케이트 (질량%) | 알루 미늄 부톡 시드 (질량%) | 에틸 실리케이트 가수 분해 겔액 | 알루미늄 전극층 표면 저항 (mΩ/□) | p+층 표면 저항 (Ω/□) | 밀착성 | 외 관 | 변형량 (㎜) | |||
종래예 1 | - | - | - | 4 | - | 6.7 | 16.9 | △ | ○ | 1.2 |
종래예 2 | - | - | - | 2 | - | 5.9 | 17.2 | × | ○ | 1.1 |
실시예 1 | 10 | - | - | - | - | 3.0 | 16.3 | ○ | ○ | 0.5 |
실시예 2 | 5 | - | - | - | - | 5.5 | 20.5 | ○ | ○ | 0.5 |
실시예 3 | 1 | - | - | - | - | 4.5 | 19.2 | ○ | ○ | 0.6 |
실시예 4 | 10 | - | - | 1 | - | 4.9 | 16.7 | ○ | ○ | 0.5 |
실시예 5 | 5 | - | - | 2 | - | 5.4 | 17.6 | ○ | ○ | 0.6 |
실시예 6 | 1 | - | - | 3 | - | 5.9 | 15.5 | ○ | ○ | 0.7 |
실시예 7 | - | 17 | - | - | - | 4.4 | 19.2 | ○ | ○ | 0.5 |
실시예 8 | - | 5 | - | - | - | 4.9 | 23.1 | ○ | ○ | 0.6 |
실시예 9 | - | 1 | - | 2 | - | 5.5 | 18.3 | ○ | ○ | 0.8 |
실시예 10 | - | - | 14 | - | - | 3.7 | 20.7 | ○ | ○ | 0.6 |
실시예 11 | - | - | 8 | - | - | 5.9 | 22.4 | ○ | ○ | 0.5 |
실시예 12 | - | - | 2 | - | 5.4 | 18.9 | ○ | ○ | 0.7 | |
실시예 13 | - | - | 2 | 2 | - | 6.3 | 23.7 | ○ | ○ | 0.7 |
실시예 14 | 1 | - | - | - | [탄소] 0.02 | 5.0 | 20.4 | ○ | ○ | 0.8 |
실시예 15 | 1 | - | - | - | [탄소] 0.1 | 5.0 | 19.3 | ○ | ○ | 0.6 |
실시예 16 | 1 | - | - | - | [탄소] 0.3 | 5.0 | 22.2 | ○ | ○ | 0.6 |
실시예 17 | 1 | - | - | - | [탄소] 0.5 | 6.5 | 22.7 | ○ | ○ | 0.5 |
실시예 18 | 1 | - | - | - | [산화 규소] 3 | 7.2 | 16.9 | ○ | ○ | 0.8 |
실시예 19 | 1 | - | - | - | [산화 규소] 8 | 6.7 | 19.2 | ○ | ○ | 0.7 |
유리 프릿 (질량%) | 특성 | |||||
알루미늄 전극층 표면 저항 (mΩ/□) | p+층 표면 저항 (Ω/□) | 밀착성 | 외관 | 변형량 (㎜) | ||
종래예 3 | 4 | 7.7 | 19.7 | ○ | × | 1.5 |
종래예 4 | 2 | 8.2 | 22.1 | ○ | △ | 1.6 |
Claims (18)
- p형 실리콘 반도체 기판(1)상에 전극(8)을 형성하기 위한 페이스트 조성물로서, 알루미늄 분말, 유기질 비히클, 및 금속 알콕시드를 포함하는 페이스트 조성물.
- 제1항에 있어서,알루미늄 분말을 60 질량% 이상 75 질량% 이하, 유기질 비히클을 10 질량% 이상 35 질량% 이하, 금속 알콕시드를 0.1 질량% 이상 20 질량% 이하 포함하는페이스트 조성물.
- 제1항에 있어서,상기 금속 알콕시드는 금속으로서 규소를 포함하는 금속 알콕시드인페이스트 조성물.
- 제1항에 있어서,무기 화합물 입자, 유기 화합물 입자 및 탄소 입자로 이루어지는 군으로부터 선택된 적어도 1종류의 입자를 더 포함하는페이스트 조성물.
- 제4항에 있어서,상기 무기 화합물 입자 및/또는 상기 유기 화합물 입자의 평균 입경이 10㎛ 이하인페이스트 조성물.
- 제4항에 있어서,상기 탄소 입자의 평균 입경이 1㎛ 이하인페이스트 조성물.
- 제1항에 있어서,유리 프릿을 더 포함하는페이스트 조성물.
- p형 실리콘 반도체 기판(1)상에 전극(8)을 형성하기 위한 페이스트 조성물로서, 알루미늄 분말, 유기질 비히클, 및 금속 알콕시드를 가수 분해하여 중축합시킴으로써 얻어진 졸 및/또는 겔을 포함하는 페이스트 조성물.
- 제8항에 있어서,알루미늄 분말을 60 질량% 이상 75 질량% 이하, 유기질 비히클을 10 질량% 이상 35 질량% 이하, 금속 알콕시드를 가수 분해하여 중축합시킴으로써 얻어진 졸 및/또는 겔을 0.1 질량% 이상 20 질량% 이하 포함하는페이스트 조성물.
- 제8항에 있어서,상기 금속 알콕시드는 금속으로서 규소를 포함하는 금속 알콕시드인페이스트 조성물.
- 제8항에 있어서,무기 화합물 입자, 유기 화합물 입자 및 탄소 입자로 이루어지는 군으로부터 선택된 적어도 1종류의 입자를 더 포함하는페이스트 조성물.
- 제11항에 있어서,상기 무기 화합물 입자 및/또는 상기 유기 화합물 입자의 평균 입경이 10㎛ 이하인페이스트 조성물.
- 제11항에 있어서,상기 탄소 입자의 평균 입경이 1㎛ 이하인페이스트 조성물.
- 제8항에 있어서,유리 프릿을 더 포함하는페이스트 조성물.
- p형 실리콘 반도체 기판(1)상에 전극(8)을 형성하기 위한 페이스트 조성물로서, 알루미늄 분말, 유기질 비히클, 및 금속 알콕시드를 포함하는 페이스트 조성물을 p형 실리콘 반도체 기판상에 도포한 후 소성함으로써 형성된 전극(8)을 구비한 태양 전지 소자.
- 제15항에 있어서,상기 p형 실리콘 반도체 기판(1)과 상기 전극(8)의 사이에는 상기 금속 알콕시드에 포함된 금속 화합물이 형성되어 있는태양 전지 소자.
- p형 실리콘 반도체 기판(1)상에 전극(8)을 형성하기 위한 페이스트 조성물로서, 알루미늄 분말, 유기질 비히클, 및 금속 알콕시드를 가수 분해하여 중축합시킴으로써 얻어진 졸 및/또는 겔을 포함하는 페이스트 조성물을 p형 실리콘 반도체 기판상에 도포한 후 소성함으로써 형성된 전극(8)을 구비한 태양 전지 소자.
- 제17항에 있어서,상기 p형 실리콘 반도체 기판(1)과 상기 전극(8)의 사이에는 상기 금속 알콕시드에 포함된 금속 화합물이 형성되어 있는태양 전지 소자.
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2005
- 2005-06-23 US US11/587,153 patent/US7938988B2/en active Active
- 2005-06-23 WO PCT/JP2005/011511 patent/WO2006003830A1/ja active Application Filing
- 2005-06-23 EP EP05752905.9A patent/EP1739690B1/en not_active Ceased
- 2005-06-23 CN CNB200580018625XA patent/CN100538915C/zh not_active Expired - Fee Related
- 2005-06-23 JP JP2006528575A patent/JP4802097B2/ja not_active Expired - Fee Related
- 2005-06-23 KR KR1020077001755A patent/KR100825880B1/ko active IP Right Grant
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009061984A2 (en) * | 2007-11-09 | 2009-05-14 | Technic, Inc. | Method of metallizing solar cell conductors by electroplating with minimal attack on underlying materials of construction |
WO2009061984A3 (en) * | 2007-11-09 | 2009-08-06 | Technic | Method of metallizing solar cell conductors by electroplating with minimal attack on underlying materials of construction |
WO2010143794A1 (ko) * | 2009-06-08 | 2010-12-16 | 제일모직 주식회사 | 도핑 기능을 갖는 에칭 페이스트 및 이를 이용한 태양전지의 선택적 에미터 형성방법 |
WO2011028058A3 (en) * | 2009-09-04 | 2011-07-14 | Dongwoo Fine-Chem Co., Ltd. | Aluminum paste for a back electrode of solar cell |
KR20150036363A (ko) * | 2012-07-19 | 2015-04-07 | 히타치가세이가부시끼가이샤 | 패시베이션층 형성용 조성물, 패시베이션층이 형성된 반도체 기판, 패시베이션층이 형성된 반도체 기판의 제조 방법, 태양 전지 소자, 태양 전지 소자의 제조 방법 및 태양 전지 |
KR20160045716A (ko) * | 2013-08-23 | 2016-04-27 | 도요 알루미늄 가부시키가이샤 | 페이스트 조성물 및 태양 전지 소자 |
Also Published As
Publication number | Publication date |
---|---|
TWI258223B (en) | 2006-07-11 |
EP1739690A4 (en) | 2009-05-27 |
CN1981346A (zh) | 2007-06-13 |
EP1739690B1 (en) | 2015-04-01 |
US20070221270A1 (en) | 2007-09-27 |
US7938988B2 (en) | 2011-05-10 |
KR100825880B1 (ko) | 2008-04-28 |
EP1739690A1 (en) | 2007-01-03 |
WO2006003830A1 (ja) | 2006-01-12 |
JP4802097B2 (ja) | 2011-10-26 |
TW200608589A (en) | 2006-03-01 |
JPWO2006003830A1 (ja) | 2008-07-31 |
CN100538915C (zh) | 2009-09-09 |
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