KR20070027877A - The method of inspecting lcd tft transister with electric beam - Google Patents

The method of inspecting lcd tft transister with electric beam Download PDF

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Publication number
KR20070027877A
KR20070027877A KR1020050079750A KR20050079750A KR20070027877A KR 20070027877 A KR20070027877 A KR 20070027877A KR 1020050079750 A KR1020050079750 A KR 1020050079750A KR 20050079750 A KR20050079750 A KR 20050079750A KR 20070027877 A KR20070027877 A KR 20070027877A
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South Korea
Prior art keywords
electron beam
transistor
tft
inspecting
transister
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KR1020050079750A
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Korean (ko)
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장청순
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장청순
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Priority to KR1020050079750A priority Critical patent/KR20070027877A/en
Publication of KR20070027877A publication Critical patent/KR20070027877A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Thin Film Transistor (AREA)
  • Computer Hardware Design (AREA)

Abstract

A method of inspecting an TFT(Thin Film Transistor) array using an electron beam is provided to inspect transistors formed on a TFT glass of an LCD(Liquid Crystal Display) using an electron beam within a short time. An electron beam generated by an electron beam generator is projected to a pixel electrode connected to a drain electrode of a transistor formed on a TFT glass. When power is applied to a gate line, the pixel electrode and a data line are connected to each other according to the transistor. The transistor is operated by current according to the electron beam. When power is not applied to the gate line, the current according to the electron beam is not generated.

Description

전자빔의 이용한 티에프티 어레이 검사 방법{The method of inspecting LCD TFT transister with electric beam }The method of inspecting LCD TFT transister with electric beam}

대표도 LCD를 구성하는 TFT Array와 Array를 검사할 수 있도록 고안한 검사 모듈 구조도Representative diagram of the inspection module structure designed to inspect the TFT array and the array constituting the LCD

1: 전자빔 발생기, 2: 전자빔, 3: 진공 박스1: electron beam generator, 2: electron beam, 3: vacuum box

3: TFT 기판 4: Pixel 전극, 5 Data 선, 6: Gate선. 7 트랜지스터3: TFT substrate 4: Pixel electrode, 5 Data line, 6: Gate line. 7 transistors

도 1은 전자장을 광학으로 변환하여 검사하는 장치의 구조도.1 is a structural diagram of a device for converting and inspecting an electromagnetic field into optical.

본 발명은 LCD를 구성하는 TFT Array 기판의 회로를 검사하기 위한 장치로, 더욱 상세하게는 전자빔을 이용하여 TFT Array를 검사하기 위하여 전자빔 이용한다. The present invention is an apparatus for inspecting a circuit of a TFT Array substrate constituting an LCD, and more particularly, uses an electron beam to inspect a TFT array using an electron beam.

일반적으로 LCD(액정 표시장치)를합착하기 전에 검사하는 방법으로는 액정을 이용하여 전자장을 광학적인 신호로 변환하여 검사한다. (도 1) 이 방법은 변환기를 일정한 높이를 유지해야한다. 검사 중에 Glass와의 충돌에 의해 고가의 변환기가 파괴되는 경우가 많다. In general, a method of inspecting before attaching an LCD (liquid crystal display device) is performed by converting an electromagnetic field into an optical signal using a liquid crystal. This method should keep the transducer at a constant height. Expensive transducers are often destroyed by collision with glass during inspection.

본 발명은 이러한 문제점을 해결하기 위하여 전자빔을 이용하여 TFT 트랜지스터를 검사한다. The present invention examines a TFT transistor using an electron beam to solve this problem.

이하 첨부된 도면을 상세히 설명하면 다음과 같다.Hereinafter, the accompanying drawings will be described in detail.

대표도는 전자빔 발생장치를 보여준다. 전자빔 발생기(1)에서 발생한 전자빔은 TFT Glass위의 트랜지스터의 드레인(drain)에 연결된 Pixel전극(ITO, 투명전극)에 투사된다. 또한, 대표도의 Gate선(6)에 전원을 인가하면 트랜지스터(7)의 작용에 의해 Pixel전극(4)과 Data선(5)가 연결이 이루어지고 이때 전자빔에 의한 전류가 흐르면 정상적으로 트랜지스터가 동작을 한 것이 된다(트랜지스터 On Test). 또한, Gate선(10)에 전원을 인가하지 않은 상태에서는 전자빔에 의한 전류가 발생하지 않아야한다(트랜지스터 Off Test). 이 두 가지 테스트가 정상적일 경우 대표도의 트랜지스터는 정상적인 것으로 판단된다.The representative figure shows the electron beam generator. The electron beam generated by the electron beam generator 1 is projected onto the pixel electrode ITO (transparent electrode) connected to the drain of the transistor on the TFT glass. In addition, when power is applied to the gate line 6 of the representative diagram, the pixel electrode 4 and the data line 5 are connected by the action of the transistor 7, and the transistor operates normally when the current flows through the electron beam. (Transistor on test). In addition, in the state where power is not applied to the gate line 10, the current by the electron beam should not be generated (transistor off test). If these two tests are normal, the transistor in the representative figure is considered normal.

이상에서 상술한 바와 같이 본 발명은 전자빔을 이용하여 LCD의 TFT Glass에 형성된 트랜지스터를 검사하는 장치이다. 타 장치와 비교해서 저렴한 가격에 제작이 가능하고 검사 시간을 단축할 수 있는 장점이 있다.As described above, the present invention is an apparatus for inspecting a transistor formed in TFT glass of an LCD using an electron beam. Compared with other devices, it can be manufactured at a low price and can shorten inspection time.

Claims (1)

전자빔을 이용하여 LCD의 TFT판넬의 트랜지스터를 On,Off시키면서 Data Line에서 전류를 측정하여 트랜지스터의 양불을 검사하는 방법, LCD이외에도 능동 유기이엘(Active OLED)의 경우도 적용이 가능하다.It can be applied to the method of checking the quantum of the transistor by measuring the current in the data line while turning the transistor of the TFT panel of the LCD on and off using the electron beam, and in the case of an active OLED in addition to the LCD.
KR1020050079750A 2005-08-30 2005-08-30 The method of inspecting lcd tft transister with electric beam KR20070027877A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9236010B2 (en) 2011-06-03 2016-01-12 Samsung Display Co., Ltd. Array test device and array test method for organic light emitting display device and method for manufacturing the organic light emitting display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9236010B2 (en) 2011-06-03 2016-01-12 Samsung Display Co., Ltd. Array test device and array test method for organic light emitting display device and method for manufacturing the organic light emitting display device

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