KR20070015919A - Insulated pad conditioner and method of using same - Google Patents

Abstract

The present invention relates to a wafer planarization process with a conditioning tool 14 having an electrical insulator that electrically insulates the abrasive surface of the conditioning tool 14. The electrical insulators extend the useful life of the abrasive surface of the conditioning tool 14 by reducing the level of electrochemically induced corrosion.

Abrasives, Conditioning Tools, Abrasive Pads, Pad Conditioners, Flattening Systems

Description

INSULATED PAD CONDITIONER AND METHOD OF USING SAME}

The present invention generally relates to a polishing process, and more particularly to a planarization process used in the manufacture of semiconductor devices. More specifically, the present invention relates to a planarization process with electrically insulated pad conditioners.

During fabrication, semiconductor wafers used in semiconductor fabrication typically undergo a number of processing steps, including deposition, patterning, and etching steps. Details of these manufacturing steps for semiconductor wafers can be found in Tonshoff et al. "Abrasive Machining of Silicon" (Annals of the International Institution for Production Engineering Research). , Pp. 39/2/1990, pp. 621 to 635. For each manufacturing step, it is often necessary or desirable to modify or improve the exposed surface of the wafer to prepare for the next manufacturing step or manufacturing step of the wafer.

One method of modifying or improving the exposed surface of the wafer involves treating the wafer surface with a slurry containing a plurality of glass abrasive particles dispersed in a liquid. Typically, this slurry is applied to a polishing pad, and then the wafer surface is moved relative to the pad to remove or remove material from the wafer surface. The slurry may contain agents that chemically react with the wafer surface. This type of process is commonly referred to as chemical-mechanical planarization or polishing (CMP) process.

An electro-chemical-mechanical planarization or polishing (ECMP) variant of CMP is the addition of current flow through the electrolyte solution and the surface of the workpiece. See, for example, U.S. Patent 5,911,619 (Uzoh et al.), Which describes a method of planarizing the surface of a wafer by combining a chemical mechanical planarization method with an electrochemical planarization method.

Electro-chemical mechanical deposition (ECMD) methods and equipment are also described in the prior art. See, for example, US Pat. No. 6,176,992 (Talieh), which describes a method for simultaneously performing deposition and polishing of a conductive material on a wafer. The current may also be used in the wafer planarization process for other purposes, such as detecting the end point of the processing step.

One problem with CMP, ECMP, ECMD and other wafer planarization and polishing processes is that the process must be carefully observed to achieve the desired wafer surface topography. For example, the history of use of the polishing pad can affect the polishing result. The polishing pad surface should be conditioned to maintain the proper shape.

The polishing pad is conditioned with an abrasive product, commonly referred to as a pad conditioner. After repeated conditioning steps, the pad conditioner will eventually be unable to condition the polishing pad with satisfactory speed and uniformity. Highly corrosive environments in which pad conditioners are frequently used can accelerate the rate at which pad conditioners are consumed.

Replacement of spent pad conditioners in wafer processing systems has a negative impact on productivity and causes undesirable changes in wafer processing conditions. Thus, if the useful life of the pad conditioner can be increased, the efficiency of the wafer planarization process can be increased. Similar considerations apply to other slurry and fixed abrasive polishing processes.

In addition to other corrosive elements, current flow through the pad conditioner can cause electrochemically induced corrosion. For example, in the ECMP or ECMD process, the current may be intentionally introduced into the wafer process. For example, in a CMP process or the like, the introduction of current by a stray current path may not be intentional.

The present invention provides an electrically insulated abrasive surface. More specifically, the present invention provides a wafer planarization process using a conditioning tool having an electrical insulator that electrically insulates the abrasive surface of the conditioning tool. Electrical insulators extend the useful life of the abrasive surface of the conditioning tool by reducing the level of electrochemically induced corrosion.

In one aspect, the present invention provides a wafer planarization system having a power source having a first electrode and a second electrode. This wafer planarization system includes a polishing pad carrier connected to a first electrode and a workpiece carrier connected to a second electrode. A conditioning tool with an abrasive surface condition the polishing pad. The abrasive surface of the conditioning tool is electrically insulated from at least one of the electrodes by an electrical insulator. In some embodiments, the conditioning tool has an electrical insulator.

In another aspect, the wafer planarization system is an electro-chemical planarization system. This electro-chemical planarization system has a polishing pad carrier connected to the cathode and a workpiece carrier connected to the anode. A conditioning tool with an abrasive surface condition the polishing pad. The abrasive surface of the conditioning tool is electrically insulated from at least one of the electrodes by an electrical insulator.

In another aspect, the conditioning tool includes an electrically insulated conditioning disk having an abrasive surface and a substrate. This conditioning disk may have a carrier attached to the substrate. The carrier may be an electrical insulator.

Also provided are methods for conditioning an electrochemical-mechanical polishing pad. The method includes electrically insulating the abrasive surface of the conditioning tool. The abrasive surface is disposed in contact with the polishing pad and is moved relative to the polishing pad.

In another aspect of the present invention, a method of planarizing a first side of a wafer is provided. These methods include providing a movable polishing pad. The first side of the wafer is placed in contact with the polishing pad. Thereafter, current flows through the first side of the wafer. The abrasive surface of the conditioning tool electrically insulated from the current is placed in contact with the polishing pad.

The above summary is not intended to describe each disclosed embodiment or every implementation of the present invention. Embodiments that help the description are more specifically illustrated in the following figures and detailed description.

1 is a schematic of an exemplary electrochemical-mechanical planarization system with an electrically insulated pad conditioner.

2 is a side cross-sectional view of an exemplary conditioning disk assembly.

3 is a side cross-sectional view of an exemplary conditioning disk with a carrier.

The present invention provides an electrically insulated abrasive surface. More specifically, the present invention provides a wafer planarization process using a conditioning tool having an electrical insulator that electrically insulates the abrasive surface of the conditioning tool. Electrical insulators extend the useful life of the abrasive surface of the conditioning tool by reducing the level of electrochemically induced corrosion.

As used herein, the term "electrically insulated" is a relative term that means that there is basically no current flow as an item identified from the referenced power source. For example, the abrasive surface is "electrically insulated" if the abrasive surface does not have an electrical connection with the referenced power source. The electrical connection can be formed by any means including, for example, wires, conductive fluids, metal plates or fasteners, conductive abrasive particles, conductive metal matrices, and combinations thereof. If the abrasive surface is electrically connected to only one electrode of the power source and there is essentially no potential difference between the abrasive surface and any other power source connected to the abrasive surface (ie less than about 100 mV), the abrasive surface is also It is considered to be "electrically insulated" from the power source. In other words, the abrasive surface is " electrically insulated " unless current from the referenced power source can flow through the abrasive surface.

1 is a schematic diagram of an exemplary electrochemical-mechanical planarization system 10 having an electrically insulated conditioning tool 14. As shown in FIG. 1, the wafer carrier 12 is moved relative to the polishing pad 24 to deform the surface of the wafer held by the wafer carrier 12. The polishing pad 24 is attached to the polishing pad carrier 26. A power source 18 having a first electrode 20 and a second electrode 22 is used to generate a current passing through the workpiece schematically indicated by the ammeter 19. The first electrode is typically connected to the polishing pad 26, and a conductive fluid is used to allow current to flow through the surface of the polishing pad 24 and the workpiece.

The polishing pad 24 is conditioned by the conditioning tool 14. The conditioning tool 14 includes a conditioning disk 34 in contact with the polishing pad 24. The ammeter 21 schematically shows that there is essentially no current flow between the conditioning tool 14 and the surface of the polishing pad 24 that includes any conductive fluid in contact with the polishing pad 24. In other words, the conditioning tool 14 is electrically isolated from any current flow through the workpiece.

For example, in an electro-chemical mechanical planarization process, the first electrode 20 will be a cathode (ie, connected to the negative post of the power source), and the second electrode 22 will be an anode (ie, positive of power source). Connected to the post). In other configurations, the polarities may be alternating or inverted. For example, in the plating step, the first electrode 20 will be an anode and the second electrode 22 will be a cathode.

2 is a side cross-sectional view of an exemplary conditioning disk assembly. The conditioning disk assembly includes a conditioning disk 34 mounted to the conditioning disk holder 32. The conditioning disc holder 32 is attached to the conditioning tool 14 by a mounting chuck 30. Conditioning disk 34 includes an abrasive surface 16 on substrate 36.

The abrasive surface 16 is a rough surface suitable for conditioning the polishing pad. For example, the abrasive surface may include abrasive particles and matrix materials, as disclosed in US Pat. No. 6,123,612 (Goers), incorporated herein by reference. Other techniques known in the art can be used to attach abrasive particles to a support to form an abrasive surface, including, for example, electroplating, sintering and brazing.

The size and type of abrasive particles are selected based on the intended application. Suitable abrasive particles are, for example, fused aluminum oxide, ceramic aluminum oxide, heat treated aluminum oxide, silicon carbide, boron carbide, tungsten carbide, alumina zirconia, iron oxide, diamond (natural and synthetic), cerium oxide, cubic boron nitride , Garnet, carborundum, boron nitrite and combinations thereof. In certain preferred embodiments, the abrasive particles have a Mohs hardness of at least about 8. In another embodiment, the Mohs' Hardness is at least about 9. In yet another embodiment, the Mohs' Hardness is at least about 10.

Abrasive particles useful in the present invention have an average size of at least about 3 micrometers. In some embodiments, the abrasive particles have an average size of at least about 20 micrometers. In another embodiment, the abrasive particles have an average size of at least about 40 micrometers. In yet another embodiment, the abrasive particles have an average size of at least about 80 micrometers. Abrasive particles useful in the present invention have an average size of less than about 1000 micrometers. In some embodiments, the abrasive particles have an average size of less than about 600 micrometers. In another embodiment, the abrasive particles have an average size of less than about 300 micrometers.

In some embodiments, the abrasive particles may be in the form of agglomerates of abrasive comprising a plurality of individual abrasive particles bonded together to form unit particulates. The abrasive mass may have an irregular shape or may have a predetermined shape. The abrasive particles may further comprise surface treatment agents such as, for example, binding agents, metal or ceramic coatings.

The matrix material used in the abrasive layer to adhere the abrasive particles can include, for example, tin, bronze, silver, iron and alloys or combinations thereof. The matrix material may include other metals and metal alloys, including, for example, stainless steel, titanium, titanium alloys, zirconium, zirconium alloys, nickel, nickel alloys, chromium and chromium alloys. Substrate 36 is, for example, stainless steel foil, nickel or nickel-sold under the trade name " INCONEL " by McMaster-Carr Supply Co., Chicago, Illinois, Chicago, Illinois, USA. It may be made of any suitable material such as chromium-iron alloy.

The abrasive surface 16 is electrically insulated from at least one of the first electrode 20 and the second electrode 22. In certain preferred embodiments, the abrasive surface is electrically insulated from each of the first electrode 20 and the second electrode 22. The abrasive surface may be electrically insulated, for example, by attaching the abrasive surface to an electrically insulated substrate 36, an electrically insulated carrier 40, or an electrically insulated conditioning tool 14.

Various materials and combinations of these materials can be used to electrically insulate objects including, for example, plastics, rubber, wood, paper, cork, glass, ceramics, and the like. For example, attaching an abrasive surface to a non-conductive plastic substrate can electrically insulate the abrasive surface.

In some embodiments, the abrasive surface is electrically insulated by a conditioning disk 34 that is electrically insulated from at least one of the first electrode 20 and the second electrode 22. In some embodiments, the conditioning disk is electrically insulated from each of the first electrode 20 and the second electrode 22. The conditioning disc may be electrically insulated by the electrically insulated conditioning disc holder 32, the electrically insulated mounting chuck 30, or the electrical insulation conditioning tool 14. Mounting chuck 30 may be made of, for example, non-conductive plastic.

In yet another embodiment, the abrasive surface is electrically insulated by a conditioning tool 14 that is electrically insulated from at least one of the first electrode 20 and the second electrode 22. In some embodiments, the conditioning tool is electrically insulated from each of the first electrode 20 and the second electrode 22. The conditioning tool may be electrically insulated from either the first electrode or the second electrode, for example by attaching the conditioning tool to its support using an electrically insulating material or a combination of these materials. For example, the conditioning tool may be equipped with a non-conductive rubber or plastic support.

3 is a side cross-sectional view of an exemplary conditioning disk 38 with a carrier 40. As shown in FIG. 3, the conditioning disk 38 includes an abrasive surface 16 attached to a substrate 36 attached to a carrier 40. In certain preferred embodiments, the carrier is an electrically insulating material such as, for example, plastic or rubber. In certain preferred embodiments, the carrier is made of polycarbonate. The carrier may be made of other materials including plastics such as, for example, epoxy, polysulfone, phenolic, polyacrylates, polymethacrylates, polyolefins, styrene and combinations thereof, with or without ceramic. have. In another embodiment, the carrier is a metal, for example stainless steel.

The advantages and other embodiments of the present invention are further illustrated by the following examples, but the specific materials and amounts thereof recited in these examples as well as other conditions and details should not be construed to unduly limit the invention. For example, the abrasive layer may be integral to the substrate or attached to the substrate. All ratios and percentages are by weight unless otherwise specified.

Comparative example  One

Using a diamond pad conditioner of designation number A160 and part number 60-9800-3429-6 obtained from 3M, St. Paul, Minn., USA, the polishing pads were placed on a CMP machine without electrically insulating the abrasive layer of the pad conditioner. Adjusted.

Comparative example  2

Diamond pad conditioners of Designation No. A160 and Part No. 60-9800-3429-6, obtained from 3M, St. Paul, Minn., Were heated to soften the adhesive that bonds the abrasive element to the stainless steel base plate. After the diamond abrasive element was removed using a spatula, it was cut out 3.8 cm x 10 cm. The abrasive strip was settled in an uncovered beaker containing 0.75 mole of phosphoric acid, 3.75% hydrogen peroxide and sufficient sodium hydroxide to raise the pH to 2.0. The abrasive strip was connected to the positive output of the constant current power supply. A second nickel electrode was also placed in the beaker and a current of 1.0 amps was passed through the cell so made. By allowing the test to proceed for about 16 hours, the area of the abrasive strip exposed to current by evaporation was reduced, and both the concentration and current density of the electrolyte were increased. The top of the plate with the lowest current density was green, showing some loss of the metal matrix surrounding the diamond. Near the bottom of the plate, a region of high current density, the metal matrix and diamond disappeared, and the substrate supporting them began to decompose. The original green corrosion product was similar to the corrosion shown in Comparative Example 1.

Example 1

The pad conditioner of the present invention was prepared and tested in the same manner as in Comparative Example 2 except that no current was applied. After about 16 hours of testing, there was no apparent corrosion.

In addition to the details of the construction and function of the present invention, as for the many features and advantages of the present invention shown in the above description and examples, the disclosure is for illustration only. In particular, in terms of the shape, size and configuration of the electrically insulated pad conditioner and the method of use, the principles of the invention up to the maximum extent indicated by the meaning of the terms expressing the appended claims, and of such configurations and methods Changes in detail may be made within the scope of the equivalent.

Claims (20)

Wafer planarization system, A power source having a first electrode and a second electrode, A polishing pad carrier connected to the first electrode, A workpiece carrier connected to the second electrode, A conditioning tool comprising an abrasive surface adapted to condition the polishing pad; And an electrical insulator configured to separate the abrasive surface from at least one of the first electrode and the second electrode. The wafer planarization system of claim 1, wherein the conditioning tool comprises the electrical insulator. The wafer planarization system of claim 2, wherein the wafer planarization system is an electro-chemical planarization system, the first electrode is a cathode, and the second electrode is an anode. 3. The wafer leveling system of claim 2, wherein said conditioning tool further comprises an electrically insulated conditioning disk comprising said abrasive surface and a substrate close to said abrasive surface. The wafer planarization system of claim 4, wherein the conditioning disk further comprises a carrier attached to the substrate. 6. The wafer planarization system of claim 5, wherein said carrier is an electrical insulator. 7. The wafer planarization system of claim 6, wherein the carrier is formed of polycarbonate. The wafer planarization system of claim 4, wherein the substrate is conductive. The wafer planarization system of claim 8, wherein the substrate comprises nickel. 10. The wafer planarization system of claim 9, wherein the abrasive surface comprises a plurality of abrasive particles attached to the substrate with a metal matrix. The wafer planarization system of claim 10, wherein the abrasive particles comprise diamond. The wafer planarization system of claim 10, wherein the metal matrix comprises nickel. Method of conditioning electrochemical-mechanical polishing pads, Electrically insulating the abrasive surface of the conditioning tool; Contacting the abrasive surface with the polishing pad; And moving the abrasive surface relative to the polishing pad. The method of claim 13, wherein the conditioning tool further comprises an electrically insulated conditioning disk comprising a substrate close to the abrasive surface and a carrier attached to the substrate. 15. The method of claim 14, wherein said carrier is an electrical insulator. The method of claim 15, wherein the carrier is formed of polycarbonate. To flatten the first side of the workpiece, Providing a movable polishing pad, Contacting the first side of the workpiece with the polishing pad, Allowing a current to flow through the first side of the workpiece; Providing an abrasive surface of a conditioning tool electrically insulated from the current; Contacting the abrasive surface with the polishing pad. 18. The method of claim 17, wherein the conditioning tool comprises an electrically insulated conditioning disk comprising a substrate close to the abrasive surface and a carrier attached to the substrate. 19. The method of claim 18 wherein the carrier is an electrical insulator. 20. The method of claim 19, wherein said carrier is formed of polycarbonate.

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