KR20070004343A - Electron emission device and the fabrication method for thereof - Google Patents

Abstract

An electron emission device and a fabrication method thereof are provided to secure a withstand voltage by preventing diffusion of an auxiliary electrode in an insulating bake process. A cathode electrode(31) is formed by depositing a conductive material on a substrate. An auxiliary electrode(32) is formed in a predetermined pattern by depositing a metal oxide on the cathode electrode. A first insulating layer(33) is formed on the auxiliary electrode by using an insulating material. An insulating hole(35) for exposing a part of the cathode electrode is formed on the first insulating layer. A first gate electrode(34) is formed on the insulating layer by using a metal material. An electron emission unit(36) is formed in the insulating hole of the cathode electrode.

Description

ELECTRON EMISSION DEVICE AND THE FABRICATION METHOD FOR THEREOF

1 is a view schematically showing the structure of a conventional electron emitting device.

2 is a view schematically showing the structure of an electron emitting device having a double gate structure according to the prior art.

3 is a view schematically showing the structure of a first embodiment of an electron emitting device according to the present invention;

4A to 4D are flowcharts of a process of a first embodiment of a method of manufacturing an electron emitting device according to the present invention;

5 schematically shows the structure of a second embodiment of an electron-emitting device according to the invention;

6A to 6E are process flowcharts of a manufacturing method according to the second embodiment of FIG.

7 schematically shows the structure of a third embodiment of an electron-emitting device according to the invention;

8A to 8D are process flowcharts for the third embodiment of FIG. 7.

9 is a view schematically showing the structure of a fourth embodiment of an electron emitting device according to the present invention;

10A to 10D are process flowcharts of the fourth embodiment of FIG. 9.

<Description of main parts of drawing>

30, 50, 70, 90 --- Substrate 31, 51, 91 --- Cathode electrodes

32, 52, 71, 92 --- Auxiliary electrode 33, 54, 73, 94 --- First insulating layer

34, 55, 74, 95 --- First gate electrode 35, 56, 75, 96a, 96b --- Insulation hole

36, 57, 76, 99 --- Electron emitter 53 --- Metal oxide film

93 --- Transparent conductive film 97 --- Second insulating layer

98 --- second gate electrode

The present invention relates to an electron-emitting device and a method for manufacturing the same, and particularly to an electron-emitting device having an auxiliary electrode, in which the withstand voltage can be secured by preventing diffusion of the auxiliary electrode during insulation baking. It is about.

In general, an electron emission display device is a display device including an electron emission device for each pixel. The electron emitting device is a device that emits electrons from the cathode in response to a voltage between the cathode and the gate electrode, and the emitted electrons are accelerated by the anode and collide with the phosphor to emit light. In general, there are two types of electron emitting devices using a hot cathode and a cold cathode as electron sources. The electron-emitting devices using the cold cathode are FEA (Field Emitter Array) type, SCE (Surface Conduction Emitter) type, MIM (Metal-Insulator-Metal) type, MIS (Metal-Insulator-Semiconductor) type, BSE (Ballistic) electron surface emitting) and the like are known.

The FEA type electron emission device uses a low work function or high β function as an electron emission source to emit electrons by electric field in vacuum. In addition, devices using electron emission sources for nanomaterials have been developed.

The SCE type electron emission device is a device in which an electron emission part is formed by providing a conductive thin film between two electrodes disposed to face each other on a substrate and providing a micro crack in the conductive thin film. The device utilizes a principle that electrons are emitted from the electron emission portion, which is the fine gap, by applying a voltage to an electrode to flow a current to the surface of the conductive thin film.

The MIM and MIS electron emission devices each form an electron emission portion formed of a metal-dielectric layer-metal (MIM) and a metal-dielectric layer-semiconductor (MIS) structure, and are disposed between two metals or metals and semiconductors having a dielectric layer interposed therebetween. When a voltage is applied to the device, a device using the principle of emitting electrons while moving and accelerating from a metal having a high electron potential or a metal having a low electron potential toward the metal.

The BSE-type electron emitting device forms an electron supply layer made of a metal or a semiconductor on an ohmic electrode by using the principle that electrons travel without scattering when the size of the semiconductor is reduced to a dimension region smaller than the average free stroke of electrons in the semiconductor. And an insulating layer and a metal thin film formed on the electron supply layer to emit electrons by applying power to the ohmic electrode and the metal thin film.

1 is a view schematically showing a structure of a conventional electron emitting device. As shown therein, the electron-emitting device includes a cathode electrode 11 formed by depositing a conductive material on the substrate 10; An auxiliary electrode 12 formed on the cathode electrode 11 in a predetermined pattern; An insulating layer (13) formed on the auxiliary electrode (12) and having an insulating hole (15) formed to expose a portion of the cathode electrode (11); A gate electrode 14 formed of a metal material on the insulating layer 13; And an electron emission unit 17 formed in the insulating hole 13 on the cathode electrode 11.

2 is a view schematically showing a structure of an electron emitting device having a double gate structure according to the related art. As shown in the drawing, an electron emitting device having a double gate structure according to the related art includes: a cathode electrode 21 formed by depositing a conductive material on a substrate 20; An auxiliary electrode 22 formed in a predetermined pattern on the cathode electrode 21; A first insulating layer 23 formed on the auxiliary electrode 22 and having an insulating hole 25a formed to expose a part of the cathode electrode 21; A first gate electrode 24 formed of a metal material on the first insulating layer 23; A second insulating layer 26 formed of an insulating material on the first gate electrode 24; A second gate electrode 27 formed of a metal material on the second insulating layer 26; And an electron emission unit 27 formed in the insulating holes 25a and 25b on the cathode electrode 21.

The conventional electron emission device formed as described above has a structure in which an auxiliary electrode is formed to secure a low resistance value of a cathode electrode formed of ITO.

Here, the auxiliary electrode uses a metal material such as Ag or Cr having a low resistance value. However, a metal material such as Ag or Cr, which is used as an auxiliary electrode, diffuses during a predetermined process of the insulating layer, thereby making it difficult to secure a breakdown voltage between the cathode electrode and the first gate electrode.

SUMMARY OF THE INVENTION An object of the present invention is to provide an electron emitting device capable of securing a breakdown voltage by preventing diffusion of an auxiliary electrode during insulation firing, and a method of manufacturing the same.

In order to achieve the above object, the electron-emitting device according to the present invention comprises: a cathode electrode formed by depositing a conductive material on a substrate; An auxiliary electrode formed in a predetermined pattern by depositing a metal oxide on the cathode; A first insulating layer formed of an insulating material on the auxiliary electrode and having an insulating hole formed to expose a portion of the cathode electrode; A first gate electrode formed of a metal material on the insulating layer; And an electron emission unit formed in the insulating hole on the cathode electrode.

In addition, in order to achieve the above object, the electron emitting device according to the present invention comprises: an auxiliary electrode formed in a predetermined pattern by depositing a metal material on a substrate; A metal oxide film formed of a metal oxide on the auxiliary electrode; A first insulating layer formed on the metal oxide film and having insulating holes formed to expose a portion of the metal oxide film; A first gate electrode formed of a metal material on the insulating layer; And an electron emitting portion formed in the insulating hole on the metal oxide film.

In addition, in order to achieve the above object, the method of manufacturing an electron emitting device according to the present invention comprises the steps of: forming a cathode on a substrate, and then forming an auxiliary electrode in a predetermined pattern using a metal oxide; Forming a first insulating layer having an insulating hole so that a portion of the cathode electrode is exposed; Forming a first gate electrode on the first insulating layer by using a metal material; The cathode is characterized in that the step of forming an electron emission portion in the insulating hole exposed to the cathode.

In addition, to achieve the above object, a method of manufacturing an electron emitting device according to the present invention comprises the steps of forming an auxiliary electrode in a predetermined pattern using a metal material on a substrate; Forming a metal oxide film on the auxiliary electrode by using a metal oxide; Forming a first insulating layer to form an insulating hole through which a portion of the metal oxide film is exposed; Forming a first gate electrode on the first insulating layer by using a metal material; The metal oxide film is characterized in that the step of forming an electron emission portion in the insulating hole exposed.

According to the present invention as described above, in the electron-emitting device in which the auxiliary electrode is formed, the withstand voltage can be ensured by preventing diffusion of the auxiliary electrode during the insulation firing.

Hereinafter, preferred embodiments of the electron emission device according to the present invention will be described in detail with reference to the accompanying drawings.

3 is a view schematically showing the structure of a first embodiment of an electron emission device according to the present invention. As shown therein, the electron-emitting device according to the present invention comprises: a cathode electrode 31 formed by depositing a conductive material on a substrate 30; An auxiliary electrode 32 formed in a predetermined pattern by depositing a metal oxide material on the cathode electrode 31; An insulating layer (33) formed on the auxiliary electrode (32) and having an insulating hole (35) formed to expose a portion of the cathode electrode (31); A gate electrode 34 formed of a metal material on the insulating layer 33; And an electron emission unit 36 formed in the insulating hole 35 on the cathode electrode 31.

The substrate 30 may be, for example, a glass or silicon substrate. For example, when the electron emission unit 36 is formed by backside exposure using carbon nanotube (CNT) paste, a transparent substrate such as a glass substrate is preferable. .

The cathode electrode 31 may be formed on the rear substrate at a predetermined interval in the form of a pad. The cathode electrode 31 is supplied with a data signal or a scan signal applied from a data driver or a scan driver. The cathode electrode 31 may be a conductor and may be a transparent conductor such as indium tin oxide (ITO).

The auxiliary electrode 32 is formed on the cathode electrode 31 in a predetermined pattern using a Ti-based TiO ₂ or TiN metal oxide material. The auxiliary electrode 32 may secure the resistance value of the cathode electrode 31 to prevent distortion of the input signal.

The insulating layer 33 is formed on the cathode electrode 31 and the auxiliary electrode 32 to electrically insulate the cathode electrode 31 from the gate electrode 34. The insulating layer 33 may be made of an insulating material, for example, a mixed glass material such as PbO and SiO ₂ . Here, the height of the insulating layer 33 formed on the auxiliary electrode 32 is formed higher than the height of the insulating hole 35 to ensure the withstand voltage of the insulating layer.

The gate electrode 34 is formed on the insulating layer 33 in a predetermined shape, for example, in a direction crossing the cathode electrode 31 on a stripe. Here, the gate electrode 34 may be made of at least one conductive metal material selected from a highly conductive metal such as silver (Ag), molybdenum (Mo), aluminum (Al), chromium (Cr), and alloys thereof. The gate electrode 34 is supplied with a respective data signal or a scan signal applied from the data driver or the scan driver.

The electron emission unit 36 is electrically connected to the exposed cathode electrode 31 and is disposed on the carbon nanotube; Nanotubes by graphite, diamond, diamond-like carbon or a combination thereof; Or a nanowire of Si or SiC.

4A to 4D are flowcharts of a process of a first embodiment of a method of manufacturing an electron emission device according to the present invention.

First, the method of manufacturing an electron emitting device according to the present invention will be described in general. The electron emitting device may be manufactured by a thick film process or a thin film process. The thick film process refers to a process of forming an insulating layer with a thicker thickness by applying a paste-like insulating material by screen printing. The thin film process uses an CVD (chemical vapor deposition) to form an insulating film such as a silicon oxide film. By vapor deposition, the process of forming an insulating layer with a thinner thickness is said. According to the thick film process, a large-area display device can be easily manufactured, and there are advantages of securing mass productivity and low manufacturing cost, while it is difficult to manufacture a fine and highly integrated electron-emitting device. On the other hand, the thin film process has the advantages, disadvantages and disadvantages of the above-described thick film process.

First, as shown in FIG. 4A, the cathode electrode 31 and the auxiliary electrode 32 are sequentially formed on the substrate 30. Here, a transparent glass substrate is used as the substrate 30 for backside exposure described later. The cathode electrode 31 is made of indium tin oxide (ITO), which is a transparent conductive material.

Specifically, ITO is deposited on the substrate 30 to a predetermined thickness, for example, 800 mm to 2,000 mm, and then patterned into a predetermined shape, for example, a stripe shape. At this time, the patterning of the cathode electrode 31 is a method for patterning a well-known material layer such as the formation of an etching mask by application, exposure and development of photoresist, and the etching of the cathode electrode 31 using the etching mask. Can be performed by

Subsequently, as illustrated in FIG. 4B, a metal oxide of TiO ₂ or TiN is deposited on the cathode electrode 31 to form the auxiliary electrode 32 in a predetermined pattern. In this case, the TiO ₂ may be formed of TiO ₂ through an oxidation process after depositing Ti. Here, the auxiliary electrode 32 can secure the resistance value of the cathode electrode 31 to prevent the distortion of the input signal. In this case, the resistance value of the cathode electrode is 0.5 kPa ~ 0.8 kPa.

Subsequently, as shown in FIG. 4C, an insulating layer 33 is formed on the cathode electrode 31 and the auxiliary electrode 32 to have a predetermined thickness. In the case where the insulating layer 33 is formed by a thick film process, the insulating material in a paste state is coated to a predetermined thickness by screen printing and then fired at a temperature of about 550 ° C. or more to about 15 μm to 20 μm. To form the insulating layer 33 having. At this time, the firing temperature may vary depending on the type of insulating material.

Subsequently, a gate electrode 34 is formed on the insulating layer 33. The gate electrode 34 may be formed by sputtering a conductive metal such as at least one conductive metal material selected from silver (Ag), molybdenum (Mo), aluminum (Al), chromium (Cr), and alloys thereof. By vapor deposition to a thickness of approximately 2,500 mW to 3,000 mW.

In addition, after the photoresist PR is applied to the insulating layer 33, a portion of the insulating layer 23 is etched to expose a portion of the cathode electrode 31 to form the insulating hole 35. To form.

That is, the insulating hole 35 is completed by dry or wet etching until the cathode electrode 31 is exposed through the insulating hole 35 of the gate electrode 34 and the insulating layer 33.

Next, as shown in FIG. 4D, the electron emission part 36 is formed in the insulating hole 35. First, the photoresist (PR) is applied to the entire surface of the resultant, and then patterned so that the cathode electrode 31 is partially exposed on the bottom surface of the insulating hole 35. A photosensitive carbon nanotube (CNT) paste is applied to the entire surface of the result by screen printing. The CNT paste is selectively exposed by irradiating ultraviolet (UV) light on the back surface of the substrate 30. At this time, only a portion of the CNT paste exposed by the photoresist (PR) pattern is exposed and cured.

Here, by controlling the exposure amount, the exposure depth of the CNT paste may be adjusted. Thereafter, when the photoresist PR is removed using a developer such as acetone, the unexposed CNT paste is also removed while the photoresist PR is removed, and only the CNT paste of the exposed portion remains. ). Subsequently, when the firing process is performed at a predetermined temperature, for example, a temperature of about 460 ° C., the electron emission unit 36 has a desired height while shrinking simultaneously with firing. The firing temperature may vary depending on the type and components of the CNT paste.

As a result, an electron-emitting device capable of preventing the diffusion of the auxiliary electrode may be completed to secure a breakdown voltage.

5 is a view schematically showing the structure of a second embodiment of an electron emission device according to the present invention. As shown therein, the electron-emitting device according to the present invention comprises: a cathode electrode 51 formed by depositing a conductive material on a substrate 50; An auxiliary electrode 52 formed by depositing a metal material on the cathode electrode 51 in a predetermined pattern; A metal oxide film 53 formed on the auxiliary electrode 52; An insulating layer 54 having an insulating hole 56 formed to expose a portion of the metal oxide film 53; A gate electrode 55 formed of a metal material on the insulating layer 54; And an electron emitting portion 57 formed in the insulating hole 56 on the metal oxide film 53.

Here, a detailed description of the second embodiment will be omitted with reference to the first embodiment.

The metal oxide film is formed using TiO ₂ , TiN or SiO ₂ . At this time, the metal oxide film is to ensure the withstand voltage of the insulating layer by preventing the diffusion of the auxiliary electrode during the baking process of the insulating layer.

6A to 6E are process flowcharts of a manufacturing method according to the second embodiment of FIG. 5.

First, as shown in FIG. 6A, the cathode electrode 51 and the auxiliary electrode 52 are sequentially formed on the substrate 50. Here, as the substrate 50, a transparent glass substrate is used for backside exposure described later. The cathode electrode 51 is also made of indium tin oxide (ITO), which is a conductive transparent material for the same reason as described above.

Specifically, ITO is deposited on the substrate 50 to a predetermined thickness, for example, 800 mm to 2,000 mm, and then patterned into a predetermined shape, for example, a stripe shape. At this time, the patterning of the cathode electrode 51 is a method for patterning a well-known material layer such as formation of an etching mask by application, exposure and development of photoresist and etching of the cathode electrode 51 using the etching mask. Can be performed by

The auxiliary electrode 52 is formed in a predetermined pattern by depositing a metal material such as Ag or Cr on the cathode electrode 51. Here, the auxiliary electrode 52 can prevent the distortion of the input signal by securing the resistance value of the cathode electrode 51. At this time, the resistance value of the cathode electrode 51 has a resistance of 0.5 kPa to 0.8 kPa.

Subsequently, as shown in FIG. 6B, the metal oxide layer 53 is formed on the auxiliary electrode 52. Here, TiO ₂ , TiN or SiO ₂ is used as the metal oxide film 53.

Hereinafter, a detailed description of the process of FIGS. 6C and 6D will be omitted with reference to the process flowchart of the first embodiment.

On the other hand, Figure 7 is a schematic diagram showing the structure of a third embodiment of an electron emitting device according to the present invention. As shown therein, the electron-emitting device according to the present invention comprises: an auxiliary electrode 71 formed in a predetermined pattern by depositing a metal material on the substrate 70; A cathode electrode 72 formed by depositing a conductive material on the substrate 70 on which the auxiliary electrode 71 is formed; An insulating layer 73 having an insulating hole 75 formed to expose a portion of the cathode electrode 72; A gate electrode 74 formed of a metal material on the insulating layer 73; And an electron emission unit 76 formed in the insulating hole 75 on the cathode electrode 71.

8A through 8D are process flowcharts of the third embodiment of FIG. 7.

First, as shown in FIG. 8A, a metal material of Ag, Al, or Mo is deposited on the substrate 70 to form the auxiliary electrode 71 in a predetermined pattern.

As shown in FIG. 8B, an indium tin oxide (ITO), which is a conductive transparent material, is deposited on the substrate 70 on which the auxiliary electrode 71 is formed to a predetermined thickness, for example, a thickness of 800 kPa to 2,000 kPa. Then, it is patterned into a predetermined shape, for example, a stripe shape. At this time, the patterning of the cathode electrode 71 is a patterning method of a well-known material layer, such as the formation of an etching mask by the application, exposure and development of the photoresist, and the etching of the cathode electrode 71 using the etching mask. It can be performed by.

Hereinafter, detailed descriptions according to the processes of FIGS. 8C and 8D will be omitted with reference to the second embodiment.

That is, the electron emission device of the third embodiment has a structure in which the auxiliary electrode 71 is formed before the cathode electrode 72 on the substrate 70, and the cathode electrode 72 is formed of an insulating layer to be formed later. The diffusion of the auxiliary electrode 71 is prevented during the insulation baking process.

9 is a diagram schematically illustrating a structure of a fourth embodiment of an electron emission device according to the present invention. As shown therein, the cathode electrode 91 formed by depositing a conductive material on the substrate 90; An auxiliary electrode 92 formed by depositing a metal material on the cathode electrode 91 in a predetermined pattern; A transparent conductive film 93 formed on the auxiliary electrode 92; A first insulating layer 94 having an insulating hole 96a formed to expose a portion of the transparent conductive film 93; A first gate electrode (95) formed of a metal material on the insulating layer (94); A second insulating layer (97) formed of an insulating material on the first gate electrode (95); A second gate electrode 98 formed of a metal material on the second insulating layer 97; And an electron emission unit 99 formed in the insulating holes 96a and 96b on the transparent conductive film 93.

The transparent conductive film 99 is formed on the auxiliary electrode 92 by using ITO, which is the same material as the cathode electrode 91.

10A to 10D are process flowcharts of the fourth embodiment of FIG. 9.

First, as shown in FIG. 10A, the cathode electrode 91 and the auxiliary electrode 92 are sequentially formed on the substrate 90. Here, a transparent glass substrate is used as the substrate 90 for backside exposure described later. In addition, the cathode electrode 91 is also made of indium tin oxide (ITO), which is a conductive transparent material.

Specifically, ITO is deposited on the substrate 90 to a predetermined thickness, for example, 800 mm to 2,000 mm, and then patterned into a predetermined shape, for example, a stripe shape. At this time, the patterning of the cathode electrode 91 is a method for patterning a well-known material layer such as formation of an etching mask by application, exposure, and development of a photoresist and etching of the cathode electrode 91 using the etching mask. Can be performed by

The auxiliary electrode 92 is formed in a predetermined pattern by depositing a metal material such as Ag or Cr on the cathode electrode 91. Here, the auxiliary electrode 92 can secure the resistance value of the cathode electrode 91 to prevent distortion of the input signal. In this case, the resistance value of the cathode electrode is 0.5 kPa ~ 0.8 kPa.

As shown in FIG. 10B, an indium tin oxide (ITO), which is a conductive transparent material, is deposited on the substrate 90 on which the auxiliary electrode 92 is formed to a predetermined thickness by sputtering to form a transparent conductive film 93. ).

Subsequently, as illustrated in FIG. 10C, a first insulating layer 94 is formed on the transparent conductive film 93 to have a predetermined thickness. In the case of forming the first insulating layer 94 by a thick film process, the insulating material in a paste state is coated to a predetermined thickness by screen printing and then fired at a temperature of about 550 ° C. or more to about 15 μm to 20 μm. The first insulating layer 94 having a thickness of about is formed. At this time, the firing temperature may vary depending on the type of insulating material.

In addition, a first gate electrode 95 is formed on the first insulating layer 94. The first gate electrode 95 is sputtering at least one conductive metal material selected from a conductive metal such as silver (Ag), molybdenum (Mo), aluminum (Al), chromium (Cr), and alloys thereof. To a thickness of approximately 2,500 Å to 3,000 Å.

Thereafter, the first insulating layer 94 and the first gate electrode 95 are coated with a photoresist PR on the stacked structure, and then the insulating layer 94 is exposed so that a part of the transparent conductive film 93 is exposed. And a portion of the first gate electrode 95 is dry or wet etched to form the insulating hole 96a.

Next, as shown in FIG. 10D, a second insulating layer 97 and a second gate electrode 98 are formed on the first gate electrode 95. Specifically, the second insulating layer 97 is formed of an insulating material of SiO ₂ and is subjected to a predetermined process at a temperature of 520 ° C-550 ° C. Thereafter, at least one selected from a metal having good conductivity on the second insulating layer 97, such as gold (Au), silver (Ag), platinum (Pt), aluminum (Al), chromium (Cr), and an alloy thereof. It may be made of a conductive metal material. For example, the second gate electrode 98 is formed by depositing chromium (Cr) to a thickness of about 2,500 kPa to 3,000 kPa by sputtering.

Here, the patterning of the second gate electrode 98 and the second insulating layer 97 also forms the insulating hole 96b by the patterning method of the material layer described above. In this case, the second gate electrode 98 and the second insulating layer 97 are dry or wet etched until the transparent conductive layer 93 is exposed to form an insulating hole 96b.

Next, as shown in FIG. 10E, a carbon nanotube (CNT) paste is screen printed on the resultant. The back surface of the substrate 90 is irradiated with ultraviolet (UV) light to selectively expose the CNT paste. When the photoresist (PR) is removed using a developer such as acetone, the unexposed CNT paste is also removed while the photoresist (PR) is removed, and only the CNT paste of the exposed portion remains. The discharge part 99 is formed. When the firing process is performed at a predetermined temperature, for example, about 460 ° C., the electron-emitting unit 99 has a desired height while shrinking at the same time as firing.

On the other hand, instead of the transparent conductive film formed on the auxiliary electrode in the electron-emitting device of the double gate structure formed of SiO ₂ series material can be applied to another embodiment.

As described above, the withstand voltage can be secured by preventing the diffusion of the auxiliary electrode during the insulation firing through the first, second, third and fourth embodiments, respectively.

Although the present invention has been described with reference to the embodiments illustrated in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

As described above, the electron-emitting device and its manufacturing method according to the present invention in the electron-emitting device with the auxiliary electrode, it is possible to ensure the withstand voltage by preventing the diffusion of the auxiliary electrode during the insulation baking.

In addition, the auxiliary electrode can prevent the distortion of the input signal by securing the resistance value of the cathode electrode.

Claims (17)

A cathode electrode formed by depositing a conductive material on the substrate; An auxiliary electrode formed in a predetermined pattern by depositing a metal oxide on the cathode; A first insulating layer formed of an insulating material on the auxiliary electrode and having an insulating hole formed to expose a portion of the cathode electrode; A first gate electrode formed of a metal material on the insulating layer; And an electron emission unit formed in the insulating hole on the cathode electrode. The method of claim 1, The auxiliary electrode is an electron emission device, characterized in that formed of a Ti-based TiO ₂ or TiN metal oxide material. An auxiliary electrode formed in a predetermined pattern by depositing a metal material on the substrate; A metal oxide film formed of a metal oxide on the auxiliary electrode; A first insulating layer formed on the metal oxide film and having insulating holes formed to expose a portion of the metal oxide film; A first gate electrode formed of a metal material on the insulating layer; And an electron emission unit formed in the insulating hole on the metal oxide film. The method of claim 3, wherein The metal oxide film is an electron emission device, characterized in that formed using TiO ₂ , TiN or SiO ₂ . The method of claim 3, wherein And forming a cathode electrode by depositing a conductive material between the substrate and the auxiliary electrode. The method of claim 1, An electron emission device, characterized in that to form a transparent conductive film in place of the metal oxide film. The method of claim 5, The transparent conductive film is an electron emission device, characterized in that formed using ITO. The method according to claim 1 or 3, And a second insulating layer and a second gate electrode are sequentially formed on the first gate electrode. Forming a cathode on the substrate, and then forming an auxiliary electrode using a metal oxide material in a predetermined pattern; Forming a first insulating layer having an insulating hole so that a portion of the cathode electrode is exposed; Forming a first gate electrode on the first insulating layer by using a metal material; And forming an electron emission unit in the insulating hole in which the cathode electrode is exposed. The method of claim 9, The auxiliary electrode is a method of manufacturing an electron emitting device, characterized in that using a Ti-based TiO ₂ or TiN metal oxide material. The method of claim 9, The auxiliary electrode is formed of Ti, and then an oxidation process is performed to form TiO ₂ . Forming an auxiliary electrode on the substrate using a metal material in a predetermined pattern; Forming a metal oxide film on the auxiliary electrode by using a metal oxide; Forming a first insulating layer to form an insulating hole through which a portion of the metal oxide film is exposed; Forming a first gate electrode on the first insulating layer by using a metal material; And forming an electron emission part in the insulating hole in which the metal oxide film is exposed. The method of claim 12, The metal oxide film is a method of manufacturing an electron emitting device, characterized in that formed using TiO ₂ , TiN or SiO ₂ . The method of claim 12, And a cathode electrode is further formed by depositing a conductive material between the substrate and the auxiliary electrode. The method of claim 12, Method of manufacturing an electron emitting device characterized in that to form a transparent conductive film in place of the metal oxide film. The method of claim 15, The transparent conductive film is a method of manufacturing an electron emitting device, characterized in that formed using ITO. The method of claim 9 or 12, And forming a second insulating layer and a second gate electrode sequentially on the first gate electrode.

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