KR20060126215A - Exhaust-line of chemical vapor deposition - Google Patents

Exhaust-line of chemical vapor deposition Download PDF

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KR20060126215A
KR20060126215A KR1020050047947A KR20050047947A KR20060126215A KR 20060126215 A KR20060126215 A KR 20060126215A KR 1020050047947 A KR1020050047947 A KR 1020050047947A KR 20050047947 A KR20050047947 A KR 20050047947A KR 20060126215 A KR20060126215 A KR 20060126215A
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South Korea
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exhaust
vapor deposition
chemical vapor
process chamber
exhaust line
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KR1020050047947A
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Korean (ko)
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강민수
김창민
이상현
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삼성전자주식회사
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Priority to KR1020050047947A priority Critical patent/KR20060126215A/en
Publication of KR20060126215A publication Critical patent/KR20060126215A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Abstract

An exhaust line of a chemical vapor deposition apparatus is provided to prevent degradation of valves by rapidly exhausting a powder generated from the exhaust line. A vacuum pump(16) is installed on an exhaust line(14) connected to an exhaust outlet(12) of a process chamber(10). A first valve(18) and a second valve(20) are provided at the exhaust line. The exhaust line(14) connects the exhaust outlet of the process chamber to the vacuum pump to exhaust residual gas in the process chamber. An inclined section(22) is arranged between an end of the exhaust line and the first valve, and inclined with a predetermined angle centering the exhaust outlet. Therefore, a powder is rapidly exhausted.

Description

화학기상증착 장치의 배기라인{Exhaust-line of Chemical Vapor Deposition}Exhaust-line of Chemical Vapor Deposition

도 1은 종래의 화학기상증착 장치의 배기라인을 보여주는 도면.1 is a view showing an exhaust line of a conventional chemical vapor deposition apparatus.

도 2는 종래의 화학기상증착 장치에서 각 부위에 발생한 파우더를 보여주는 도면.Figure 2 is a view showing the powder generated in each site in the conventional chemical vapor deposition apparatus.

도 3은 본 발명의 일 실시예에 따른 화학기상증착 장치의 배기라인을 보여주는 도면.Figure 3 is a view showing the exhaust line of the chemical vapor deposition apparatus according to an embodiment of the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10: 공정챔버 12: 배기구10: process chamber 12: exhaust port

14: 배기라인 16: 진공펌프14: exhaust line 16: vacuum pump

18: 제1 밸브 20: 제2 밸브18: first valve 20: second valve

본 발명은 화학기상증착 장치에 관한 것으로서, 보다 상세하게는 화학기상증착 장치의 진공라인에서 파우더의 발생을 억제할 수 있는 구조를 가진 화학기상증착 장치의 진공라인에 관한 것이다.The present invention relates to a chemical vapor deposition apparatus, and more particularly to a vacuum line of a chemical vapor deposition apparatus having a structure capable of suppressing the generation of powder in the vacuum line of the chemical vapor deposition apparatus.

일반적으로, 웨이퍼 상태에서 반도체 소자를 제조하는 공정을 FAB(Fabrication)공정이라 하고, 이 FAB공정은 수십 개의 단위 공정으로 나뉘어져 있으며, 이들 단위 공정 중 화학기상증착(CVD: Chemical Vapour Deposition) 공정은 반도체 소자를 형성하기 위하여 가장 널리 사용되고 있는 공정 중의 하나이다.In general, a process of manufacturing a semiconductor device in a wafer state is called a FAB (Fabrication) process, which is divided into dozens of unit processes, and chemical vapor deposition (CVD) of these unit processes is a semiconductor. One of the most widely used processes for forming devices.

이러한 화학기상증착에는 막이 형성되는 환경에 따라 플라즈마 인가 화학기상증착, 저압 화학기상증착, 상압 기상증착 등으로 나누어지는데 비교적 저온에서도 동일한 물질막을 형성시킬 수 있는 저압 화학기상증착이 많이 사용된다. 이러한 화학기상증착 공정은 공지 기술로 널리 알려져 있으므로, 구체적인 설명은 생략하기로 하고, 이하 도면을 참조하여 종래 기술에 의한 화학기상증착 장치와 그 배기라인에서 발생하는 문제점에 대하여 설명한다. Such chemical vapor deposition is divided into plasma applied chemical vapor deposition, low pressure chemical vapor deposition, and atmospheric pressure vapor deposition according to the environment in which the film is formed. Low pressure chemical vapor deposition is used to form the same material film at a relatively low temperature. Since the chemical vapor deposition process is well known in the art, a detailed description thereof will be omitted, and the problems occurring in the conventional chemical vapor deposition apparatus and its exhaust line will be described with reference to the accompanying drawings.

도 1은 종래의 화학기상증착 장치를 도시한 개략도로서, 도시된 바와 같이 종래의 화학기상증착 장치는 공정챔버(10), 배기라인(14), 진공펌프(16), 제1 밸브(18) 및 제2 밸브(20)를 포함한다. 이와 같이 구성된 종래 화학기상증착 장치는 화학기상증착 공정 수행 후 공정챔버(10)로부터 배기되는 배기가스가 배기라인(14)을 경유하여 외부로 배기될 때, 도 2에 도시된 바와 같이 배기라인(14)의 각 부위에 미세한 분진 형태의 파우더가 생성되는데, 이러한 파우더의 발생원인은 각 배기라인(14)의 온도, 압력, 배기가스의 성분 등의 차이에 의해 좌우될 수 있는 바, 특히 각 배기라인(14)의 소정 온도 및 압력 조건 하에서 각 배기라인의 배기가스의 성분차에 따른 화학반응의 유무에 의해 주로 결정된다.1 is a schematic view showing a conventional chemical vapor deposition apparatus, as shown in the conventional chemical vapor deposition apparatus is a process chamber 10, exhaust line 14, vacuum pump 16, the first valve 18 And a second valve 20. In the conventional chemical vapor deposition apparatus configured as described above, when the exhaust gas exhausted from the process chamber 10 is exhausted to the outside via the exhaust line 14 after performing the chemical vapor deposition process, as shown in FIG. The powder in the form of fine dust is produced in each part of 14), and the cause of the powder may be influenced by the difference in temperature, pressure, components of the exhaust gas, etc. It is mainly determined by the presence or absence of a chemical reaction according to the component difference of the exhaust gas of each exhaust line under the predetermined temperature and pressure conditions of the line 14.

특히 배기구(12)에 연결되는 배기라인(14)의 일단부와 제1 밸브(18)사이가 도 1에 도시된 바와 같이 배기구(12)를 축으로 하여 직각으로 형성되어 있기 때문 에 배기라인(14) 상에서 파우더가 정체되는 현상이 발생되고, 정체된 배기가스가 소정의 화학반응에 의해 미세한 분진 형태의 파우더로 배기라인(14) 내부에 응착됨으로 인해, 배기압 저하에 따른 장치 에러 발생 및 배기라인 막힘에 의한 배기가스의 역류가 발생하여 공정 불량 원인이 되며, 진공펌프(16),제1 밸브(18) 및 제2 밸브(20)의 성능이 저하되는 현상이 발생될 문제점이 있다.In particular, since an end portion of the exhaust line 14 connected to the exhaust port 12 and the first valve 18 are formed at right angles with the exhaust port 12 as an axis as shown in FIG. The powder is stagnated in step 14), and because the stagnant exhaust gas is adhered to the inside of the exhaust line 14 as a fine dust powder by a predetermined chemical reaction, device error and exhaust occurs due to the exhaust pressure drop. Reverse flow of the exhaust gas due to the clogging of the line causes a process failure, and a phenomenon in which the performance of the vacuum pump 16, the first valve 18, and the second valve 20 is degraded may occur.

본 발명은 상술한 문제점을 해결하기 위한 것으로서, 화학기상증착 장치의 배기라인 상에서의 파우더의 정체를 방지하기 위한 구조를 가진 화학기상증착 장치의 진공라인을 제공하는 것을 그 기술적 과제로 한다.SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problem, and it is an object of the present invention to provide a vacuum line of a chemical vapor deposition apparatus having a structure for preventing stagnation of powder on the exhaust line of the chemical vapor deposition apparatus.

상기 기술적 과제를 달성하기 위한 본 발명의 화학기상증착장치의 배기라인은 화학 반응에 의해 웨이퍼 상에 증착막을 형성하는 공정챔버, 상기 공정챔버로 내부의 잔류 가스를 펌핑하는 진공펌프, 상기 공정챔버의 배기구와 상기 진공펌프를 연결하는 배기라인과 상기 공정챔버의 압력 상태를 조절하는 제1 밸브 및 제2 밸브를 포함하는 화학기상증착 장치로서, 상기 배기라인은 상기 배기구와 결합하는 일단부와 상기 제1 밸브사이에 소정의 각도만큼 경사진 경사부를 포함하는 것을 특징으로 한다.The exhaust line of the chemical vapor deposition apparatus of the present invention for achieving the above technical problem is a process chamber for forming a deposition film on the wafer by a chemical reaction, a vacuum pump for pumping residual gas inside the process chamber, the process chamber of A chemical vapor deposition apparatus comprising an exhaust line connecting an exhaust port and the vacuum pump, and a first valve and a second valve to control a pressure state of the process chamber, wherein the exhaust line has one end portion coupled to the exhaust port and the first valve. It characterized in that it comprises an inclined portion inclined by a predetermined angle between the one valve.

바람직한 실시예에 있어서, 상기 경사부의 경사각도는 상기 배기구를 축으로 하여 130도 내지 140도인 것을 특징으로 한다.In a preferred embodiment, the inclination angle of the inclined portion is 130 to 140 degrees with respect to the exhaust port as an axis.

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 보다 구체적으 로 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

도 3은 본 발명에 일 실시예에 의한 화학기상증착 장치의 배기라인을 보여주는 도면으로서, 공정챔버(10)의 배기구(12)에 연결된 배기라인(14)상에 진공펌프(16)가 설치되어 있고, 상기 배기라인(14)상에는 제1 밸브(18) 및 제2 밸브(20)가 설치되어 있다.3 is a view showing an exhaust line of a chemical vapor deposition apparatus according to an embodiment of the present invention, in which a vacuum pump 16 is installed on an exhaust line 14 connected to an exhaust port 12 of a process chamber 10. The first valve 18 and the second valve 20 are provided on the exhaust line 14.

보다 구체적으로 설명하면, 공정챔버(10)는 소정의 화학반응에 의해 웨이퍼(11) 상에 증착막을 형성하는 챔버로서, 일측에는 공정챔버(10)의 내부로 반응가스를 공급하는 가스공급부(미도시)가 연통되어 설치되고, 타측에는 증착공정 수행 후 반응하지 않고 남은 잔류가스를 공정챔버(10)의 외부로 배기하기 위한 배기구(12)가 연결된다.In more detail, the process chamber 10 is a chamber for forming a deposition film on the wafer 11 by a predetermined chemical reaction, and on one side, a gas supply unit supplying a reaction gas into the process chamber 10 (not shown). C) is installed in communication with each other, and the other side is connected to an exhaust port 12 for exhausting the remaining gas which has not reacted after performing the deposition process to the outside of the process chamber 10.

배기라인(14)은 공정챔버(10)의 배기구(12)와 진공펌프(16)를 연결하여 공정챔버(10) 내부의 잔류가스를 배기한다. 배기라인(14)은 도 2에 도시된 바와 같이 공정챔버(10)의 배기구(12)쪽에 연결되는 배기라인(14)의 일단부와 제1 밸브(18) 사이에 배기구(12)를 축으로 하여 소정의 각도만큼 경사진 경사부(22)를 포함한다. 이러한 배기라인(14)의 경사부(22)로 인하여 공정챔버(10)로부터 발생하는 파우더가 배기라인(14)에 정체되지 않고 신속하게 이동할 수 있게 된다. 일 실시예에 있어서 배기라인(14)의 경사부(22)의 경사각도는 배기구(12)를 축으로 하여 130도 내지 140도이며 바람직한 실시예에 있어서 경사각도는 135도이다.The exhaust line 14 connects the exhaust port 12 of the process chamber 10 and the vacuum pump 16 to exhaust residual gas in the process chamber 10. As shown in FIG. 2, the exhaust line 14 has the exhaust port 12 as an axis between one end of the exhaust line 14 connected to the exhaust port 12 side of the process chamber 10 and the first valve 18. And the inclined portion 22 inclined by a predetermined angle. Due to the inclined portion 22 of the exhaust line 14, the powder generated from the process chamber 10 can be quickly moved without stagnation in the exhaust line 14. In one embodiment, the inclination angle of the inclined portion 22 of the exhaust line 14 is 130 to 140 degrees with respect to the exhaust port 12, and in the preferred embodiment, the inclination angle is 135 degrees.

진공펌프(16)는 공정챔버(10)의 배기구(12)에 배기라인(14)을 통해 연결되어 공정챔버(10)의 내부 압력을 감압하여 공정챔버(10) 내부의 잔류가스를 외부로 배 기하도록 펌핑한다.The vacuum pump 16 is connected to the exhaust port 12 of the process chamber 10 through the exhaust line 14 to reduce the internal pressure of the process chamber 10 to discharge residual gas inside the process chamber 10 to the outside. Pump to ensure that

제1 밸브(18)는 배기라인(14)을 통해 배기되는 가스의 양을 조절하며 제2 밸브(20)는 배기라인(14)을 닫거나 열어 가스의 배기여부를 결정한다. 일 실시예에 있어서 제1 밸브는 스로틀밸브(Throttle Valve)이고, 제2 밸브는 게이트밸브(Gate Valve)이다.The first valve 18 controls the amount of gas exhausted through the exhaust line 14 and the second valve 20 closes or opens the exhaust line 14 to determine whether the gas is exhausted. In one embodiment, the first valve is a throttle valve and the second valve is a gate valve.

상기와 같은 특징을 가지는 본 발명에 의한 화학기상증착 장치의 배기라인을 통해 파우더가 처리되는 과정을 설명하면 다음과 같다.When the powder is processed through the exhaust line of the chemical vapor deposition apparatus according to the present invention having the characteristics as described above are as follows.

먼저 선행공정을 수행한 웨이퍼가 공정챔버(10)에 로딩되면 소정의 공정제어에 의해 가스공급부(미도시)로부터 공정챔버(10)에 소정량의 반응가스가 공급되고, 이후 반응가스에 의한 소정 화학반응에 의해 웨이퍼 상에 소정 박막이 형성되는 화학기상증착 공정이 수행된다. 이러한 증착공정 수행 후 공정챔버(10)내에 반응하지 않고 남은 잔류 가스는 배기구(12)에 연결된 배기라인(14)을 통해 외부로 배기되는 바, 이때 배기라인(14)에 형성된 경사부(22)로 인하여 발생된 파우더는 배기라인(14)상에 정체되지 않고 배기라인(14)을 통해 신속하게 외부로 이동되게 된다.First, when the wafer having been subjected to the preceding process is loaded into the process chamber 10, a predetermined amount of reaction gas is supplied from the gas supply unit (not shown) to the process chamber 10 by a predetermined process control, and then a predetermined amount of reaction gas is supplied. A chemical vapor deposition process is performed in which a predetermined thin film is formed on a wafer by a chemical reaction. After the deposition process is performed, the remaining gas which has not reacted in the process chamber 10 is exhausted to the outside through the exhaust line 14 connected to the exhaust port 12. At this time, the inclined portion 22 formed in the exhaust line 14 Due to the powder generated is not stagnant on the exhaust line 14 is quickly moved to the outside through the exhaust line (14).

본 발명이 속하는 기술분야의 당업자는 본 발명이 그 기술적 사상이나 필수적 특징을 변경하지 않고서 다른 구체적인 형태로 실시될 수 있다는 것을 이해해야만 한다. 그러므로 이상에서 기술한 실시예들은 모든 면에서 예시적인 것이며 한정적이 아닌 것으로 이해해야만 한다. 본 발명의 범위는 상기 상세한 설명보다는 후술하는 특허청구 범위에 의하여 나타내어지며, 특허청구범위의 의미 및 범위 그리고 그 등가개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위 에 포함되는 것으로 해석되어야 한다.Those skilled in the art should understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features of the present invention. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

상술한 바와 같이, 본 발명에 따르면 화학기상증착 공정 중에 발생한 파우더가 배기라인 상에 정체되지 않고 신속하게 이동하게 되어 화학기상증착 장치가 효과적으로 동작할 수 있다는 효과가 있다.As described above, according to the present invention, the powder generated during the chemical vapor deposition process moves rapidly without stagnation on the exhaust line, so that the chemical vapor deposition apparatus can operate effectively.

또한 본 발명에 따르면, 발생된 파우더가 배기라인 상에 정체되지 않고 신속하게 이동하게 되어 제1 밸브 및 제2 밸브의 성능저하를 방지할 수 있다는 효과가 있다.In addition, according to the present invention, the generated powder is quickly moved without stagnation on the exhaust line, thereby preventing the performance degradation of the first valve and the second valve.

Claims (2)

화학 반응에 의해 웨이퍼 상에 증착막을 형성하는 공정챔버, 상기 공정챔버로 내부의 잔류 가스를 펌핑하는 진공펌프, 상기 공정챔버의 배기구와 상기 진공펌프를 연결하여 가스를 배기하는 배기라인, 상기 공정챔버의 압력 상태를 조절하는 제1 밸브 및 제2 밸브를 포함하는 화학기상증착 장치로서,A process chamber for forming a deposition film on a wafer by a chemical reaction, a vacuum pump for pumping residual gas into the process chamber, an exhaust line connecting the exhaust port of the process chamber and the vacuum pump to exhaust the gas, the process chamber A chemical vapor deposition apparatus comprising a first valve and a second valve for adjusting a pressure state of 상기 배기라인은 상기 배기구와 결합하는 일단부와 상기 제1 밸브사이에 소정의 각도만큼 경사진 경사부를 포함하는 것을 특징으로 하는 화학기상증착 장치의 진공라인.The exhaust line vacuum line of the chemical vapor deposition apparatus, characterized in that the inclined portion inclined by a predetermined angle between the one end and the first valve coupled to the exhaust port. 제1항에 있어서, 상기 경사부의 경사각도는According to claim 1, wherein the inclination angle of the inclined portion is 상기 배기구를 축으로 하여 130도 내지 140도인 것을 특징으로 하는 화학기상증착 장치의 진공라인.Vacuum line of the chemical vapor deposition apparatus, characterized in that 130 to 140 degrees with the exhaust port as an axis.
KR1020050047947A 2005-06-03 2005-06-03 Exhaust-line of chemical vapor deposition KR20060126215A (en)

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