KR20060121611A - Side-emitting light emitting diode and fabrication method thereof - Google Patents

Abstract

A side-emitting light emitting diode and a fabricating method thereof are provided to reduce remarkably thickness of a wall of an LED by forming the wall of the LED with a substrate. A concave part(108) is formed on a semiconductor substrate. A lower metal layer(102) and an upper metal layer(104) are formed on both sides of the semiconductor substrate. A second upper metal layer(112a) is used for covering a wall face of concave part and the first upper metal layer. An LED chip(120) is disposed within the concave part. A transparent sealing part(130) is used for sealing the LED chip. A first and a second upper metal layer assembly are divided into two isolated parts to form an electrode. The LED chip is electrically connected with the electrode.

Description

Side type light emitting diode and its manufacturing method {SIDE-EMITTING LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF}

1 is a partial cross-sectional view of a general backlight device employing a side type LED.

2 is a front view of a conventional side-type LED.

3 is a front view of a first embodiment of a side type LED according to the present invention.

4 is a cross-sectional view taken along line 4-4 of FIG. 3.

FIG. 5 is a cross-sectional view taken along line 5-5 of FIG. 3.

FIG. 6 is a cross-sectional view corresponding to FIG. 4 of a modification of the first embodiment of the side type LED according to the present invention. FIG.

FIG. 7 is a cross-sectional view corresponding to FIG. 4 of a second embodiment of side type LED according to the invention. FIG.

FIG. 8 is a cross-sectional view corresponding to FIG. 5 of a second embodiment of side type LED according to the invention. FIG.

9 is a cross-sectional view corresponding to FIG. 4 of a modification of the second embodiment of the side type LED according to the present invention.

FIG. 10 is a cross-sectional view corresponding to FIG. 4 of a third embodiment of side type LED according to the invention. FIG.

FIG. 11 is a cross-sectional view corresponding to FIG. 4 of a modification of the third embodiment of the side type LED according to the present invention. FIG.

FIG. 12 is a cross-sectional view corresponding to FIG. 4 of another modification of the third embodiment of the side type LED according to the present invention. FIG.

13 is a cross-sectional view showing a first embodiment of a method of manufacturing a side type LED according to the present invention step by step.

14 is a cross-sectional view showing a modification step of the first embodiment of the side-type LED manufacturing method according to the present invention step by step.

15 is a cross-sectional view showing a second embodiment of a method of manufacturing a side type LED according to the present invention step by step.

16 is a cross-sectional view showing a modified example of the second embodiment of the method of manufacturing a side type LED according to the present invention step by step.

17 and 18 are cross-sectional views showing a third embodiment of the side-type LED manufacturing method according to the present invention step by step.

19 is a cross-sectional view showing a modification step of the third embodiment of the side-type LED manufacturing method according to the present invention step by step.

20 is a cross-sectional view showing another modification of the third embodiment of the method of manufacturing a side type LED according to the present invention step by step.

The present invention relates to a side type light emitting diode, and more particularly, to reduce the thickness by forming a wall around the recess as a part of the insulator substrate, and to improve the reflection efficiency and the heat radiation efficiency by forming a metal layer in the recess. It relates to a side type LED and a method of manufacturing the same.

Small LCDs such as mobile phones and PDAs use side-by-side LEDs as the light source for their backlight devices. Such side type LEDs are typically mounted on a backlight device as shown in FIG. 1.

Referring to FIG. 1, in the backlight device 50, a flat light guide plate 54 is disposed on a substrate 52, and a plurality of side type LEDs 1 (shown only one side) are arranged in an array form on the side of the light guide plate 54. Is placed. The light L incident from the LED 1 to the light guide plate 54 is reflected upwardly by a minute reflection pattern or a reflective sheet 56 provided on the bottom surface of the light guide plate 54 and exited from the light guide plate 54, and then the light guide plate ( 54) The backlight is provided to the upper LCD panel 58.

FIG. 2 is a front view showing an example of the LED 1 of the prior art as shown in FIG.

Referring to FIG. 2, the LED 1 includes a package body 10, a pair of lead frames 20 and 22 disposed in the package body 10, and an LED chip 30 mounted on the lead frame 20. It includes.

Meanwhile, the LED chip 30 is electrically connected to the lead frames 20 and 22 by the wires W, and the lead frames 20 and 22 partially extend out of the package body 10 to form external terminals. .

On the other hand, reference numeral 12 denotes a recess of the package body 10, 18 denotes the bottom surface of the wall 14, 16a denotes the upper and lower portions of the wall 14, and 16b denotes the left and right portions of the wall 14.

The mounting height of these side type LEDs is gradually decreasing, and it is expected that a dimension of 0.5 mm or less will be required in the future. In addition, the side-type LED must secure high reliability, and should realize high brightness by minimizing light loss.

Currently, a method for reducing the thickness reduction of the side type LED is focused on thinning the upper and lower portions 16a of the wall 14. However, this tends to cause problems such as the tip of the upper and lower portions 16a becoming extremely thin and brittle and unmolded portions.

In addition, since such a structure must be manufactured by hand, it also has the disadvantage of low productivity.

As a method for overcoming such limited thickness reduction and low productivity, a method for manufacturing light emitting diode devices has been proposed in US Pat. No. 6,638,780.

The method proposed in the above document is outlined as follows.

A plurality of LEDs are mounted on a large substrate (substrate aggregation) to form a transparent layer. Some of the transparent layers between adjacent compartments are removed to form transparent layers separated from each other and grooves surrounding these transparent layers. Next, a reflective material is formed in the groove by filling the reflective material. Then, a plurality of LEDs are formed by cutting the reflective layer and the large substrate so that the reflective layer remains in the form of a thin film on the outer wall of the transparent layer.

This method can to some extent overcome the limited thickness reduction and low productivity posed by the structure of FIG. 2.

However, the procedure of removing a portion of the transparent layer formed on the large substrate to form a groove, filling the groove with an injection molding to form a reflective layer, and then cutting the reflective layer again leaving only a thin film is complicated. In addition, there is a disadvantage that the cutting operation of the reflective layer surrounding the transparent layer is difficult.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and an object of the present invention is to provide a side type LED that can reduce the thickness by forming a wall around a recess as part of an insulator substrate, and a method of manufacturing the same. will be.

Another object of the present invention is to provide a side type LED and a method of manufacturing the same that can improve reflection efficiency and heat radiation efficiency by forming a metal layer in the recess.

In order to achieve the above object of the present invention, the present invention provides an insulator substrate having a recess; First and lower metal layers formed on both surfaces of the substrate, respectively; A second upper metal layer covering at least a wall surface of the recess and the first upper metal layer; An LED chip disposed in the recess; And a transparent encapsulation portion encapsulating the LED chip, wherein the first and second upper metal layer combinations on the substrate are separated into two parts electrically insulated from each other to form an electrode, and the LED chip is It is characterized by providing a side light emitting diode electrically connected to these electrodes.

The side light emitting diode may further include a second lower metal layer formed on a bottom surface of the first lower metal layer.

In the side type light emitting diodes, the second upper metal layer covers the first lower metal layer at the bottom of the recess.

In the side type light emitting diodes, the second upper metal layer covers the substrate at the bottom of the recess.

In the side type light emitting diode, the second upper metal layer is connected to each other at the lower end of the wall surface of the first lower metal layer and the concave portion. The side light emitting diode may further include a bottom plate provided on a bottom surface of the encapsulation portion and the first lower metal layer to support the LED chip in the concave portion. The side light emitting diode may further include an insulating layer interposed between the bottom plate and the first lower metal layer, and the bottom plate may be made of metal.

In addition, the side type light emitting diode may further include a through type conductive part formed through the substrate to electrically connect any part of the insulated upper metal layer combination with the lower metal layer.

In addition, the present invention to achieve the above object of the present invention

(A) forming first upper and lower metal layers on both sides of the insulator substrate;

(B) forming recesses in the upper metal layer and the substrate;

(C) coating a second upper metal layer on both sides of the structure obtained in the step (b);

(D) separating the first and second upper metal layer combinations on the substrate into two parts electrically isolated from each other to form an electrode;

(E) mounting the recess to be electrically connected to the electrode mounting the LED chip; And

(F) it characterized in that it provides a side type light emitting diode manufacturing method comprising the step of encapsulating the LED chip by molding a transparent resin on top of the structure obtained in the step (d).

In the side type light emitting diode manufacturing method, step (c) is characterized in that the second lower metal layer is also coated on the bottom surface of the structure obtained in step (b).

In the side type light emitting diode manufacturing method, the step (b) is characterized in that the concave portion is formed in the substrate to a predetermined depth.

In the side type light emitting diode manufacturing method, the step (b) is characterized in that for forming the recess so that the first lower metal layer is exposed.

In the side type light emitting diode manufacturing method, the step (b) is characterized in that for forming the recess to penetrate the first lower metal layer. Here, the method of manufacturing the side type light emitting diode further includes attaching a tape to close the bottom of the concave portion on the bottom of the structure obtained in the step (d) before the step (e). Next, the method may further include removing the tape and attaching a bottom plate to the bottom of the structure. The method may further include attaching an insulating layer to a bottom surface of the structure prior to attaching the tape, and the bottom plate may be made of metal.

The method may further include forming a conductive portion penetrating the substrate to electrically connect the upper and lower metal layers to each other.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First, a first embodiment of a side type LED according to the present invention will be described with reference to FIGS. 3 to 5. In these figures, FIG. 3 is a front view of a first embodiment of a side type LED according to the present invention, FIG. 4 is a cross-sectional view taken along the line 4-4 of FIG. 3, and FIG. 5 is a line 5-5 of FIG. It is a cross section which cut along.

As shown in FIGS. 3 to 5, the side surface LEDs 100 of the present exemplary embodiment may include the first lower and upper metal layers 102 and 104 on both surfaces of the insulator substrate 104 having the recess 108 and the through hole 110 formed therein. The insulator substrate 104 and the first lower and upper metal layers 102 and 104 are covered by the second metal layers 112a and 112b, and the vertical metal layer 114 covers the through hole 110 in the form of a cylinder. Doing. Specifically, the second upper metal layer 112a covers the recess 108 and the first upper metal layer 106, the vertical metal layer 114 covers the surface of the through hole 110, and the second lower metal layer 112b is formed of the second upper metal layer 112b. 1 covers the lower metal layer 102.

These second metal layers 112a and 112b are separated from each other by the patterned band gaps 116 to serve as electrodes. For example, in FIG. 4, the left portion of the second metal layers 112a and 112b separated from each other by the gap 116 is an anode electrode, and only a portion of the right side is a cathode electrode. Of course, the reverse is also possible.

Such first metal layers 102 and 106 are preferably formed on both sides of the substrate 102 as cladding layers, and the second metal layers 112a and 112b together with the vertical metal layer 114 are preferably formed by plating. . Meanwhile, when the diameter of the through hole 110 is small, the vertical conductive portion having a cylindrical shape may be formed in place of the vertical metal layer 114 by filling the through hole 110 with metal powder or the like. Alternatively, the second metal layers 112a and 112b may be formed by deposition instead of plating. In this case, the through hole 110 and the vertical metal layer 114 may be omitted.

The second lower metal layer 112b may also be omitted, particularly in the case of deposition.

The LED chip 120 and the zener diode 122 are mounted on the second upper metal layer 112a in the recess 108, and are connected to the second upper metal layer 112a as an electrode by the wire 124. Meanwhile, since the recess 108 is formed through the substrate 102, a part of the second upper metal layer 112a in the recess 108 is directly coupled to the first lower metal layer 102.

The encapsulation portion 130 is formed of a transparent resin on the upper portion of the structure to fill the recess 108 and to cover the second upper metal layer 112a. In FIG. 4, although the encapsulation part 130 does not fill the through hole 110, the through hole 110 in which the vertical metal layer 114 is formed may be filled with the encapsulation part 130.

Meanwhile, the substrate 104 functions as a sidewall surrounding the recess 108, and the portion of the second upper metal layer 112a in the recess 108 reflects light generated from the LED chip 120 upward. . In addition, the second metal layers 112a and 112b and the first metal layers 102 and 106 are coupled to each other to transfer heat generated from the LED chip 120 to the outside of the side type LED 100. In general, the LED 100 is connected to a heat sink equipped with heat is drawn out.

Meanwhile, when the second metal layers 112a and 112b and the first metal layers 102 and 106 are formed of the same material, the second metal layers 112a and 112b and the first lower metal layer disposed under the recess 108 may be formed. 102 is substantially a structure.

Advantages of the side type LED 100 of such a structure is as follows.

First, the thickness of the LED 100 can be minimized. In the LED 100 of the present invention, since the recess 108 is formed in the insulator substrate 104, a portion of the substrate 104 around the recess 108 becomes a sidewall. Therefore, unlike the conventional method of molding the side wall with a resin, the stability of the side wall can be improved and the thickness of the side wall can be further reduced. In this way, the thickness of the LED 100, that is, the vertical dimension in the front view of FIG. 3 can be reduced.

In addition, since the above structure forms the encapsulation unit 130 by EMC molding, color scattering can be minimized by injecting a phosphor together with a resin to obtain white light.

In addition, the structure is simple, and most components, such as the first metal layers 102 and 106, the recesses 108, the through holes 110, the second metal layers 112a and 112b and the vertical metal layer 114, are manually operated. This can be achieved by automated processes rather than by productivity.

In addition, since the second upper metal layer 112a is formed on the lower portion and the recess 108 of the LED chip 120 to serve as a reflector, the luminous efficiency of the LED 100 may be maximized.

FIG. 6 is a cross-sectional view corresponding to FIG. 4 of a modification of the first embodiment of the side type LED according to the present invention. FIG.

The LED 100-1 of the modified example shown in FIG. 6 has the LED 100 of the first embodiment shown in FIGS. 3 to 5 except that the upper portion of the encapsulation portion 130-1 is rounded in an arc shape. Is substantially the same as Accordingly, parts substantially the same as the corresponding parts in FIGS. 3 to 5 are given the same reference numerals, and description thereof will be omitted.

Next, a second embodiment of a side type LED according to the present invention will be described with reference to FIGS. 7 and 8. In these figures, FIG. 7 is a cross-sectional view corresponding to FIG. 4 of a second embodiment of a side type LED according to the present invention, and FIG. 8 is a cross-sectional view corresponding to FIG. 5 of a second embodiment of a side type LED according to the present invention. to be.

As shown in FIGS. 7 and 8, the side surface type LED 200 according to the present embodiment has the first lower and upper metal layers 202 and 204 on both surfaces of the insulator substrate 204 having the concave portion 208 and the through hole 210 formed therein. The insulator substrate 204 and the first lower and upper metal layers 202 and 204 are covered by the second metal layers 212a and 212b, and the through hole 210 is covered by the cylindrical metal layer 214 in the form of a cylinder. Doing. Specifically, the second upper metal layer 212a covers the recess 208 and the first upper metal layer 206, the vertical metal layer 214 covers the surface of the through hole 210, and the second lower metal layer 212b is formed of the second upper metal layer 212a. 1 covers the lower metal layer 202.

These second metal layers 212a and 212b are separated from each other by the patterned gap 216 to serve as electrodes. For example, in FIG. 7, the left portion of the second metal layers 212a and 212b separated from each other by the interval 216 is an anode electrode, and the portion of the right side is a cathode electrode. Of course, the reverse is also possible.

Such first metal layers 202 and 206 are preferably formed on both sides of the substrate 202 as cladding layers, and the second metal layers 212a and 212b together with the vertical metal layer 214 are preferably formed by plating. . Meanwhile, when the diameter of the through hole 210 is small, the vertical conductive portion having a cylindrical shape may be formed instead of the vertical metal layer 214 by filling the through hole 210 with metal powder or the like. Alternatively, the second metal layers 212a and 212b may be formed by deposition instead of plating. In this case, the through hole 210 and the vertical metal layer 214 may be omitted.

Meanwhile, the second lower metal layer 212b may also be omitted, particularly in the case of a deposition operation.

The LED chip 220 and the zener diode 222 are mounted on the second upper metal layer 212a in the recess 208, and are connected to the second upper metal layer 212a which is an electrode by the wire 224. On the other hand, the recess 208 is formed to a predetermined depth of the substrate 102, so that the second upper metal layer 212a in the recess is not directly connected to the first lower metal layer 202 and the configuration of FIG. different.

The encapsulation portion 230 is formed of a transparent resin on the upper portion of the structure to fill the recess 208 and to cover the second upper metal layer 212a. Meanwhile, in FIG. 7, although the encapsulation part 230 does not fill the through hole 210, the through hole 210 in which the vertical metal layer 214 is formed may be filled with the encapsulation part 230.

Meanwhile, the substrate 204 functions as a sidewall surrounding the recess 208, and the portion of the second upper metal layer 212a in the recess 208 reflects light generated from the LED chip 220 upward. . In addition, the second upper metal layer 212a transfers heat generated from the LED chip 220 to the outside of the side type LED 200. In general, it is connected to a heat sink in which the LED 200 is mounted to extract heat.

Meanwhile, when the second metal layers 212a and 212b and the first metal layers 202 and 206 are formed of the same material, the first and second upper metal layers 206 and 212a become substantially one structure, and the first and second The second lower metal layers 206 and 212b also become substantially one structure and are thermally / electrically connected to each other by the vertical metal layer 214.

Advantages of the side type LED 200 of such a structure is as follows.

First, the thickness of the LED 200 can be minimized. In the LED 200 of the present invention, since the recess 208 is formed in the insulator substrate 204, a portion of the substrate 204 around the recess 208 becomes a sidewall. Therefore, unlike the conventional art of forming sidewalls with resin, the stability of the sidewalls can be improved and the thickness of the sidewalls can be further reduced. In this way, the thickness of the LED 200, that is, the width in the cross-sectional view of FIG. 8 can be reduced.

In addition, since the above structure forms the encapsulation part 230 by EMC molding, color scattering can be minimized.

In addition, the structure is simple, and most components such as the first metal layers 202 and 206, the recesses 208, the through holes 210, the second metal layers 212a and 212b and the vertical metal layer 214 are manually operated. This can be achieved by automated processes rather than by productivity.

In addition, since the second upper metal layer 212a is formed on the lower portion of the LED chip 220 and the entire concave portion 208, the light emitting efficiency of the LED 200 may be maximized.

9 is a cross-sectional view corresponding to FIG. 4 of a modification of the second embodiment of the side type LED according to the present invention.

The LED 200-1 of the modification shown in FIG. 9 has the LED 200 of the second embodiment shown in FIGS. 7 and 8 except that the upper portion of the encapsulation portion 230-1 is rounded in an arc shape. Is substantially the same as Therefore, parts substantially the same as the corresponding parts in FIGS. 7 and 8 are given the same reference numerals, and description thereof is omitted.

Hereinafter, a third embodiment of a side type LED according to the present invention will be described with reference to FIG. 10, and FIG. 10 is a cross-sectional view corresponding to FIG. 4 of a third embodiment of the side type LED according to the present invention.

As shown in FIG. 10, in the side surface type LED 300 of the present embodiment, first lower and upper metal layers 302 and 304 are formed on both surfaces of the insulator substrate 304 having the concave portion 308 and the through hole 310 formed therein. The insulator substrate 304 and the first lower and upper metal layers 302 and 304 are covered by the second metal layer 312, and the through hole 310 is covered by the vertical metal layer 314 in the form of a cylinder. In detail, the second metal layer 312 covers the first lower and upper metal layers 302 and 306 while covering the inner wall of the recess 308.

Such first metal layers 302 and 306 are preferably formed on both sides of the substrate 302 as cladding layers, and the second metal layer 312 is preferably formed by plating together with the vertical metal layer 314. Meanwhile, when the diameter of the through hole 310 is small, the vertical conductive portion having a cylindrical shape may be formed instead of the vertical metal layer 314 by filling the through hole 310 with metal powder or the like. Alternatively, the second metal layer 312 may be formed by deposition instead of plating. In this case, the through hole 310 and the vertical metal layer 314 may be omitted.

The lower layer of the second metal layer 312, that is, the portion formed on the first lower metal layer 302 may also be omitted as necessary, particularly in the case of a deposition operation.

The LED chip 320 is disposed in the recess 308, and the zener diode 322 is mounted on the upper portion of the substrate 302 of the second metal layer 312, and the second upper metal layer, which is an electrode, is formed by the wire 324. Respectively connected to 312.

The encapsulation portion 330 is formed of a transparent resin on the upper portion of the structure to fill the recess portion 308 and to cover the second upper metal layer 312a. Meanwhile, in FIG. 10, although the encapsulation part 330 does not fill the through hole 310, the through hole 310 in which the vertical metal layer 314 is formed may be filled with the encapsulation part 330.

In addition, the bottom plate 340 is attached to the lower portion of the second metal layer 312 and the encapsulation 330 via an insulating layer 315 such as solder resist. The bottom plate 340 is preferably made of metal and attached to the bottom of the encapsulation portion 330 and the insulating layer 315 by appropriate means such as vapor deposition or adhesion.

On the other hand, in order to serve as an electrode, the second metal layer 312 is separated from each other by a patterned gap 316 in the left substrate 302, and the bottom plate 340 is patterned under the right substrate 302. Separated from each other by a gap 342.

Meanwhile, the substrate 304 functions as a sidewall surrounding the recess 308, and the bottom plate 340 portion and the second metal layer 312 portion in the recess 308 are light generated by the LED chip 320. Will be reflected upwards. In addition, the bottom plate 340 transfers the heat generated from the LED chip 320 to the outside of the side type LED (300). In general, the LED 300 is connected to a heat sink equipped with heat to extract heat.

On the other hand, when the second metal layer 312 is formed of the same material as the first metal layer 302, 306, the portion of the first and second metal layers 302, 306, 312 on both sides of the substrate 302 is substantially one It becomes a structure.

Advantages of the side type LED 300 of such a structure is as follows.

First, the thickness of the LED 300 can be minimized. In the LED 300 of the present invention, since the recess 308 is formed in the insulator substrate 304, a portion of the substrate 304 around the recess 308 becomes a sidewall. Therefore, unlike the conventional art of forming sidewalls with resin, the stability of the sidewalls can be improved and the thickness of the sidewalls can be further reduced. In this way, the thickness of the LED 300, that is, the vertical dimension in the front view of FIG. 10 can be reduced.

In addition, since the above structure forms the encapsulation portion 330 by EMC molding, color scattering can be minimized.

In addition, the structure is simple, and most of the configuration of the first metal layer 302, 306, the recess 308, the through hole 310, the second metal layer 312, the vertical metal layer 314, the bottom plate 340, and the like. Productivity is improved because the elements can be obtained in an automated process rather than manually.

In addition, since the bottom plate 340 and the second metal layer 312 on the wall of the recess 308 under the LED chip 320 serves as a reflector, the luminous efficiency of the LED 300 may be maximized.

FIG. 11 is a cross-sectional view corresponding to FIG. 4 of a modification of the third embodiment of the side type LED according to the present invention. FIG.

The LED 300-1 of the modified example shown in FIG. 11 is substantially the same as the LED 300 of the third embodiment shown in FIG. 10 except that the upper portion of the encapsulation portion 330-1 is rounded in an arc shape. Same as Therefore, parts substantially the same as those in FIG. 10 are given the same reference numerals, and description thereof will be omitted.

FIG. 12 is a cross-sectional view corresponding to FIG. 4 of another modification of the third embodiment of the side type LED according to the present invention. FIG.

The modified LED 300-2 shown in FIG. 12 is similar to the LED 300-1 of FIG. 11 in that an upper portion of the encapsulation portion 330-2 is formed in a circular shape. However, the difference in that the encapsulation portion 330-2 is formed only at a portion adjacent to the concave portion 308 of the second metal layer 312 is different. At this time, the encapsulation portion 330-2 is formed such that the wire 324 is not exposed around the concave portion 308.

Except for this point, it is substantially the same as the LED 300-1 of the modification of the third embodiment shown in FIG. Therefore, parts substantially the same as those in FIG. 11 are given the same reference numerals, and description thereof will be omitted.

Hereinafter, a first embodiment of a side type LED manufacturing method according to the present invention will be described with reference to FIG. 13, and FIG. 13 is a cross-sectional view showing a first embodiment of the side type LED manufacturing method according to the present invention step by step.

First, as shown in FIG. 13A, an insulator substrate 104 having metal layers 102 and 106 formed on both surfaces thereof is prepared. Of course, this structure can also be obtained by forming the first metal layers 102 and 106 on both sides of the insulator substrate 104.

Subsequently, as shown in FIG. 13B, the recessed portion is removed by removing a predetermined portion of the upper metal layer 106 and the substrate 104 so that the lower metal layer 102 is exposed through an appropriate process such as drilling or laser machining. Form 108. In addition, the through hole 110 penetrating the upper metal layer 106, the substrate 104 and the lower metal layer 102 is formed.

Then, the structure of FIG. 13 (b) is plated to form second metal layers 112a and 112b and the vertical metal layer 114 as shown in FIG. 13 (c). The second upper metal layer 112a is formed to cover the first lower metal layer 102 and the inner wall of the recess 108 and the first upper metal layer 106 in the recess 108, and the second lower metal layer 112b. The silver is formed to cover the bottom surface of the first lower metal layer 102. On the other hand, the vertical metal layer 114 is formed to cover the inner wall of the through-hole 110 in the form of a cylinder. Of course, when the diameter of the through hole 110 is small, the vertical conductive portion having a cylindrical shape may be formed by filling the through hole 110 with metal powder or the like. Alternatively, when the second metal layers 112a and 112b are deposited, the through hole 110 and the vertical metal layer 114 may be omitted. Meanwhile, the second lower metal layer 112b may also be omitted, particularly in the case of the deposition operation.

Subsequently, as shown in FIG. 13 (d), the first and second upper metal layers 104 and 112a and the first and second lower metal layers 102 and 112b are cut in a strip shape through a pattern process or the like to form a gap. 116 is formed. By the gap 116, the second upper metal layer 112a is separated into a left part and a right part of the drawing to become an electrode.

Then, as shown in FIG. 13E, the LED chip 120 and the zener diode 122 are mounted in the recess 108 and connected to the second upper metal layer 112a by a wire 124 or the like. .

Subsequently, the encapsulation portion 130 of FIG. 13 (f) is formed by applying a resin such as transparent epoxy to a structure of FIG. 13 (e) by an appropriate process such as EMC molding. The encapsulation 130 fills the recess 108 and covers the second upper metal layer 112a to a predetermined thickness. In this case, for example, by injecting a phosphor to obtain white light with the resin, it is possible to minimize the color scattering of light generated in the final LED.

Finally, the unit LED 100 as shown in FIG. 13 (g) is completed by cutting the structure of FIG. 13 (f) through dicing or the like. This LED 100 has the same configuration as the LED 100 described above with reference to FIGS. 3 to 5.

On the other hand, in the above embodiment has been shown and described as manufacturing one LED 100, of course, through the above process it is possible to manufacture a plurality of LED 100 from a single substrate 104 at the same time.

Unlike the prior art of FIG. 2, such a process forms a wall of the LED 100 with the substrate 104 rather than an injection molding, thereby significantly reducing the thickness of the wall. In addition, unlike US Pat. No. 6,638,780, the process of attaching and cutting the injection molding is not necessary, and since the reflector is formed of the metal layer, the reflection efficiency is high and the output of the final LED 100 is improved. In addition, high efficiency heat radiation may be performed through the metal layers 112a, 102, and 112b supporting the LED chip 120. In addition, by injecting a phosphor for obtaining white light with the resin, it is possible to minimize the color scatter of the light generated in the final LED (100).

Next, a modification of the first embodiment of the side-type LED manufacturing method according to the present invention will be described with reference to FIG. 14, and FIG. 14 shows a modification of the first embodiment of the side-type LED manufacturing method according to the present invention step by step. It is a cross section.

A modification of the first embodiment of the side-type LED manufacturing method according to the present invention is the same as that of the first embodiment of the side-type LED manufacturing method according to the present invention in which steps (a) to (e) are shown in FIG. Therefore, these steps will not be described, but will be described from step (f).

In the step (f), the encapsulation portion 130-1 is formed by applying a resin such as a transparent epoxy to a structure shown in FIG. 13E by an appropriate process such as EMC molding. The encapsulation portion 130-1 fills the recess 108 and covers the second upper metal layer 112a with a predetermined thickness. However, as can be seen in FIG. 14 (f), the upper part of the encapsulation part 130-1 is convex, which is different from that in FIG. In this case, for example, by injecting a phosphor together with a resin to obtain white light, color scattering of light generated in the final LED can be minimized.

Finally, the unit LED 100-1 as shown in FIG. 14G is completed by cutting the structure of FIG. 14F through dicing or the like. This LED 100-1 has the same configuration as the LED 100-1 described above with reference to FIG. 6.

On the other hand, in the above embodiment has been shown and described as manufacturing a single LED (100-1), of course, through the above process it is possible to manufacture a plurality of LED (100-1) from one substrate 104 at the same time. have.

Hereinafter, a first embodiment of a side type LED manufacturing method according to the present invention will be described with reference to FIG. 15, and FIG. 15 is a cross-sectional view showing a second embodiment of the side type LED manufacturing method according to the present invention step by step.

First, as shown in Fig. 15A, an insulator substrate 204 having metal layers 202 and 206 formed on both surfaces thereof is prepared. Of course, this structure can also be obtained by forming the first metal layers 202 and 206 on both sides of the insulator substrate 204.

Subsequently, as shown in FIG. 15B, predetermined portions of the upper metal layer 206 and the substrate 204 are formed at a predetermined depth at which the lower metal layer 202 is not exposed through an appropriate process such as drilling or laser machining. Is removed to form the recess 208. In addition, the through hole 210 penetrating the upper metal layer 206, the substrate 204, and the lower metal layer 202 is formed.

Next, the second metal layers 212a and 212b and the vertical metal layer 214 are formed as shown in FIG. 15 (c) by plating the structure of FIG. 15 (b). The second upper metal layer 212a is formed to cover the first lower metal layer 202 and the inner wall of the recess 208 and the first upper metal layer 206 in the recess 208, and the second lower metal layer 212b. The silver is formed to cover the bottom surface of the first lower metal layer 202. Meanwhile, the vertical metal layer 214 is formed to cover the inner wall of the through hole 210 in the form of a cylinder. Of course, when the diameter of the through hole 210 is small, the vertical conductive portion having a cylindrical shape may be formed by filling the through hole 210 with metal powder or the like. In contrast, when the second metal layers 212a and 212b are deposited, the through hole 210 and the vertical metal layer 214 may be omitted. Meanwhile, the second lower metal layer 212b may also be omitted, particularly in the case of a deposition operation.

Subsequently, as shown in FIG. 15 (d), the first and second upper metal layers 204 and 212a and the first and second lower metal layers 202 and 212b are cut in a band shape through a pattern process or the like to form a gap. Form 216. By the gap 216, the second upper metal layer 212a is divided into a left part and a right part of the drawing to become an electrode.

Then, as shown in FIG. 15E, the LED chip 220 and the zener diode 222 are mounted in the recess 208 and connected to the second upper metal layer 212a by a wire 224 or the like. .

Subsequently, the encapsulation portion 230 of FIG. 15 (f) is formed by applying a resin such as transparent epoxy to the structure of FIG. 15 (e) by an appropriate process such as EMC molding. The encapsulation portion 230 fills the recess 208 and covers the second upper metal layer 212a to a predetermined thickness. In this case, for example, by injecting a phosphor together with a resin to obtain white light, color scattering of light generated in the final LED can be minimized.

Finally, the unit LED 200 as shown in FIG. 15G is completed by cutting the structure of FIG. 15F through dicing or the like. This LED 200 has the same configuration as the LED 200 described above with reference to FIGS. 7 and 8.

On the other hand, in the above embodiment has been shown and described as manufacturing one LED 200, of course, through the above process it is possible to manufacture a plurality of LED 200 from one substrate 204 at the same time.

Unlike the prior art of FIG. 2, such a process forms a wall of the LED 200 with the substrate 204 instead of an injection molding, thereby significantly reducing the thickness of the wall. In addition, unlike US Pat. No. 6,638,780, the process of attaching and cutting the injection molding is not necessary, and since the reflector is formed of the metal layer, the reflection efficiency is high and the output of the final LED 200 is improved. In addition, by injecting a phosphor together with a resin to obtain white light, it is possible to minimize the color scatter of the light generated in the final LED (200).

Next, a modification of the second embodiment of the side-type LED manufacturing method according to the present invention will be described with reference to FIG. 16, and FIG. 16 illustrates a modification of the second embodiment of the side-type LED manufacturing method according to the present invention step by step. It is a cross section showing.

A modification of the second embodiment of the side type LED manufacturing method according to the present invention is the same as that of the second embodiment of the side type LED manufacturing method according to the present invention in which steps (a) to (e) are shown in FIG. 15. Therefore, these steps (a) to (e) will not be described, but will be described from step (f).

In the step (f), the sealing portion 230-1 is formed by applying a resin such as a transparent epoxy to a structure of FIG. 15E by an appropriate process such as EMC molding. The encapsulation portion 230-1 fills the recess 208 and covers the second upper metal layer 212a to a predetermined thickness. However, as can be seen in FIG. 16 (f), the upper portion of the encapsulation portion 230-1 is convex, which is different from that in FIG. In this case, for example, by injecting a phosphor together with a resin to obtain white light, color scattering of light generated in the final LED can be minimized.

Finally, the unit LED 200-1 as shown in FIG. 16G is completed by cutting the structure of FIG. 16F through dicing or the like. This LED 200-1 has the same configuration as the LED 200-1 described above with reference to FIG. 9.

On the other hand, in the above embodiment has been shown and described as manufacturing one LED 200-1, of course, through the above process it is possible to manufacture a plurality of LED (200-1) from one substrate 204 at the same time. have.

Hereinafter, a first exemplary embodiment of a side type LED manufacturing method according to the present invention will be described with reference to FIGS. 17 and 18, and FIGS. 17 and 18 show step-by-step steps of a third embodiment of a side type LED manufacturing method according to the present invention. It is a cross section.

First, as shown in Fig. 17A, an insulator substrate 304 having metal layers 302 and 306 formed on both surfaces thereof is prepared. Of course, this structure can also be obtained by forming the first metal layers 302 and 306 on both sides of the insulator substrate 304.

Subsequently, as shown in FIG. 17 (b), the recesses penetrate through predetermined portions of the upper metal layer 306, the substrate 304, and the lower metal layer 302 through appropriate processes such as drilling and laser machining. An opening 308 is formed to be added. In addition, the through hole 310 penetrates the upper metal layer 306, the substrate 304, and the lower metal layer 302.

Next, the structure of FIG. 17B is plated to form the second metal layer 312 and the vertical metal layer 314 as shown in FIG. 17C. The second upper metal layer 312 is formed to cover the top surface of the first upper metal layer 306, the inner wall of the opening 308, and the bottom surface of the first lower metal layer 302, and the vertical metal layer 314 is a through hole 310. It is formed to cover the inner wall of the cylindrical shape. Of course, when the diameter of the through hole 310 is small, a metal conductive powder or the like may be filled in the through hole 310 to form a vertical conductive portion having a cylindrical shape. In contrast, when the second metal layer 312 is deposited, the through hole 310 and the vertical metal layer 314 may be omitted. The lower layer of the second metal layer 312, that is, the portion formed on the first lower metal layer 302 may also be omitted as necessary, particularly in the case of a deposition operation.

Next, as shown in FIG. 17 (d), the gap 316 is formed by cutting the first upper metal layer 306 and the second metal layer 312 on the substrate 304 in a band shape through a pattern process or the like. The second metal layer 312 and the first lower metal layer 302 under the substrate 304 are cut in a band to form a gap 316, and as shown in FIG. 17E, the second metal layer An insulating layer 315 such as solder resist is formed on the bottom of 312.

Then, as shown in FIG. 17F, a tape 317 is attached to the bottom surface of the insulating layer 315 so as to close the lower end of the opening 308. The upper surface of the tape 317 may have a predetermined degree of adhesive force in order to stably maintain the LED chip 320 placed on the upper surface in subsequent operations. By attaching such a tape 317, the opening 308 is blocked to become a recess 308.

18 (g), the LED chip 320 is mounted in the recess 308, and the zener diode 322 is mounted on the second metal layer 312 on the substrate 304. 324, etc., to the second metal layer 312.

Subsequently, the encapsulation portion 330 of FIG. 18H is formed by applying a resin such as transparent epoxy to a structure of FIG. 18G by an appropriate process such as EMC molding. The encapsulation 330 fills the recess 308 and covers the second metal layer 312 with a predetermined thickness. In this case, for example, by injecting a phosphor together with a resin to obtain white light, color scattering of light generated in the final LED can be minimized.

Then, as shown in FIG. 18 (i), the tape 317 is separated and the bottom plate 340 is attached to the bottom surface of the encapsulation portion 330 and the insulating layer 315. The bottom plate 340 is preferably made of metal and attached to the bottom of the encapsulation portion 330 and the insulating layer 315 by appropriate means such as vapor deposition or adhesion.

18 (j), the gap 342 is formed by cutting a portion of the bottom plate 340 under the right substrate 304 in the form of a band through pattern processing or the like.

Finally, the unit LED 300 as shown in FIG. 18 (k) is completed by cutting the structure of FIG. 18 (j) through dicing or the like. This LED 300 has the same configuration as the LED 300 described above with reference to FIG.

On the other hand, in the above embodiment has been shown and described as manufacturing a single LED 300, of course, through the above process it is possible to manufacture a plurality of LED (300) from one substrate 304 at the same time.

Unlike the prior art of FIG. 2, such a process forms a wall of the LED 300 with the substrate 304 instead of the injection molding, thereby significantly reducing the thickness of the wall. In addition, unlike US Pat. No. 6,638,780, the process of attaching and cutting the injection molding is not necessary, and since the reflector is formed of the metal layer, the reflection efficiency is high, and thus the output of the final LED 300 is improved. In addition, high efficiency heat radiation may be performed through the bottom plate 340 supporting the LED chip 320. In addition, by injecting a phosphor together with a resin to obtain white light, it is possible to minimize the color scattering of the light generated in the final LED (300).

Next, a modification of the third embodiment of the side-type LED manufacturing method according to the present invention will be described with reference to FIG. 19, and FIG. 19 shows a modification of the third embodiment of the side-type LED manufacturing method according to the present invention step by step. It is a cross section.

A modification of the third embodiment of the side type LED manufacturing method according to the present invention is the same as that of the third embodiment of the side type LED manufacturing method according to the present invention in which steps (a) to (g) are shown in FIG. 17. Therefore, these steps (a) to (g) will not be described, but will be described from step (h).

In step (h), the encapsulation portion 330-1 of FIG. 19 (h) is formed by applying a resin such as a transparent epoxy to a structure of FIG. 18 (g) by an appropriate process such as EMC molding. The encapsulation portion 330-1 fills the recess 308 and covers the second metal layer 312 on the substrate 302 to a predetermined thickness. However, as can be seen in FIG. 19 (h), the point where the upper portion of the encapsulation portion 330-1 is convex is different from that in FIG. 18 (h). In this case, for example, by injecting a phosphor together with a resin to obtain white light, color scattering of light generated in the final LED can be minimized.

Subsequent steps of (i) to (k) are the same as those of (i) to (k) of FIG. 18. However, the finally completed unit LED 300-1 has the same configuration as the LED 300-1 described with reference to FIG. 11.

On the other hand, in the above embodiment has been shown and described as manufacturing one LED (300-1), of course, through the above process it is possible to manufacture a plurality of LED (300-1) from one substrate 304 at the same time. have.

Next, another modification of the third embodiment of the side-type LED manufacturing method according to the present invention will be described with reference to FIG. 20, and FIG. 20 is a process step by step of another modification of the third embodiment of the side-type LED manufacturing method according to the present invention. It is a cross section showing as.

A modification of the third embodiment of the side type LED manufacturing method according to the present invention is the same as that of the third embodiment of the side type LED manufacturing method according to the present invention in which steps (a) to (g) are shown in FIG. 17. Therefore, these steps (a) to (g) will not be described, but will be described from step (h).

In step (h), the encapsulation portion 330-2 of FIG. 20 (h) is formed by applying a resin such as a transparent epoxy to a structure of FIG. 18 (g) by an appropriate process such as EMC molding. The encapsulation portion 330-2 fills the recess 308 and covers the second metal layer 312 on the substrate 302 to a predetermined thickness. 20 (h), the encapsulation portion 330-2 does not cover the entire second metal layer 312 on the substrate 304 and is convexly formed around the recess 308. different from that of h). In this case, for example, by injecting a phosphor together with a resin to obtain white light, color scattering of light generated in the final LED can be minimized.

Subsequent steps of (i) to (k) are the same as those of (i) to (k) of FIG. 18. If not, the Zener diode is not mounted unlike in the process of FIG. Accordingly, the finally completed unit LED 300-2 has the same configuration as the LED 300-2 described above with reference to FIG. 12.

On the other hand, in the above embodiment has been shown and described as manufacturing one LED (300-2), of course, through the above process it is possible to manufacture a plurality of LED (300-2) from one substrate 304 at the same time. have.

According to the LED of the present invention and a method of manufacturing the same as described above, since the wall of the LED is formed of a substrate rather than an injection molding, the thickness of the wall can be significantly reduced. The process of attaching and cutting the injection molding is unnecessary, and since the reflector is formed of a metal layer, the reflection efficiency is high and the output of the final LED is improved. In addition, high efficiency heat radiation may be performed through the metal layer or the bottom plate supporting the LED chip. In addition, by injecting a phosphor together with a resin to obtain white light, it is possible to minimize the color scattering of light generated in the final LED.

Although the above has been described with reference to the preferred embodiments of the present invention, those skilled in the art may vary the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. It will be understood that modifications and variations can be made.

Claims (16)

An insulator substrate having recesses formed therein; First and lower metal layers formed on both surfaces of the substrate, respectively; A second upper metal layer covering at least a wall surface of the recess and the first upper metal layer; An LED chip disposed in the recess; And It includes a transparent encapsulation for encapsulating the LED chip, And the first and second upper metal layer combinations on the substrate are separated into two parts electrically isolated from each other to form an electrode and the LED chip is electrically connected to these electrodes. The side type light emitting diode of claim 1, further comprising a second lower metal layer formed on a bottom surface of the first lower metal layer. The side type light emitting diode of claim 1, wherein the second upper metal layer covers the first lower metal layer at a bottom of the recess. The side type light emitting diode of claim 1, wherein the second upper metal layer covers the substrate at the bottom of the recess. The side type light emitting diode of claim 1, wherein the second upper metal layer is connected to each other at a lower end of the wall surface of the first lower metal layer and the recess. The side type light emitting diode of claim 8, further comprising a bottom plate provided on a bottom surface of the encapsulation portion and the first lower metal layer to support the LED chip in the recess portion. The side type light emitting diode of claim 9, further comprising an insulating layer interposed between the bottom plate and the first lower metal layer, wherein the bottom plate is made of metal. The side-surface light emitting diode of claim 1, further comprising a through-type conductive portion formed through the substrate to electrically connect any part of the insulated upper metal layer combination with the lower metal layer. (A) forming first upper and lower metal layers on both sides of the insulator substrate; (B) forming recesses in the upper metal layer and the substrate; (C) coating a second upper metal layer on the upper surface of the structure obtained in step (b); (D) separating the first and second upper metal layer combinations on the substrate into two parts electrically isolated from each other to form an electrode; (E) mounting the recess to be electrically connected to the electrode mounting the LED chip; And (F) forming a transparent resin on top of the structure obtained in the step (D) to encapsulate the LED chip. The method of claim 1, wherein the step (c) further comprises applying a second lower metal layer to the bottom surface of the structure obtained in the step (b). The method of claim 9, wherein the step (b) comprises forming the recess in a predetermined depth in the substrate. 10. The method of claim 9, wherein in the step (b), the recess is formed to expose the first lower metal layer. 10. The method of claim 9, wherein in the step (b), the recess is formed to penetrate the first lower metal layer. The method of claim 11, Prior to the step (e), further comprising the step of attaching a tape to close the bottom of the concave portion on the bottom of the structure obtained in the step (d) And after the step (bar), removing the tape and attaching a bottom plate to the bottom of the structure. 15. The method of claim 14, further comprising attaching an insulating layer to a bottom surface of the structure prior to attaching the tape, wherein the bottom plate is made of metal. The method of claim 9, further comprising forming a conductive portion penetrating the substrate to electrically connect the upper and lower metal layers to each other.

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