KR20060109627A - Mask used for forming an electroluminescent layer - Google Patents

Mask used for forming an electroluminescent layer Download PDF

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KR20060109627A
KR20060109627A KR1020050031822A KR20050031822A KR20060109627A KR 20060109627 A KR20060109627 A KR 20060109627A KR 1020050031822 A KR1020050031822 A KR 1020050031822A KR 20050031822 A KR20050031822 A KR 20050031822A KR 20060109627 A KR20060109627 A KR 20060109627A
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pattern
evaporation source
angle
inclination
side wall
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KR1020050031822A
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Korean (ko)
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KR100773249B1 (en
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박종현
탁윤흥
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엘지전자 주식회사
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70691Handling of masks or wafers
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0002Deposition of organic semiconductor materials on a substrate
    • H01L51/0008Deposition of organic semiconductor materials on a substrate using physical deposition, e.g. sublimation, sputtering
    • H01L51/0011Deposition of organic semiconductor materials on a substrate using physical deposition, e.g. sublimation, sputtering selective deposition, e.g. using a mask
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED

Abstract

A mask for forming an organic electroluminescence layer is provided to decrease a shadow phenomenon by forming a deposition layer without deviation from a designated location of a substrate. In a mask(M1) for forming electroluminescence layer, an angle of inclination of both side-walls and both rear and front walls of a pattern formed in a center is equal. As deposition sources(S1,S2) is close to the pattern, the angle of inclination of the side wall closest to the deposition sources(S1,S2) among the both side walls increase gradually. As the deposition sources(S1,S2) is far from the pattern, the angle of inclination of the side wall farthest from the deposition sources(S1,S2) decreases gradually. As the deposition sources(S1,S2) is adjacent to the pattern, the angle of inclination of the front side wall increases gradually. As the deposition sources(S1,S2) is far from the pattern, the angle of inclination decrease gradually. As the deposition sources(S1,S2) is close to the pattern, the angle of inclination of the rear side wall decrease gradually. As the deposition sources(S1,S2) is far from the pattern, the angle of inclination of the rear side wall increase gradually. All patterns are arranged to be symmetrical one another on the center of a pattern line including a central pattern.

Description

유기 전계 발광층 형성용 마스크{Mask used for forming an electroluminescent layer} The organic electroluminescent layer mask for forming {Mask used for forming an electroluminescent layer}

도 1은 유기 전계 발광층의 증착을 위한 장치에 사용되는 일반적인 포인트 증착원의 단면도. 1 is a cross-sectional view of a typical point evaporation source used in the apparatus for the deposition of the organic light emitting layer.

도 2는 도 1에 도시된 포인트 증착원과 기판의 관계를 개략적으로 도시한 도면. Figure 2 is a diagram illustrating a relationship of the point evaporation source and the substrate shown in Fig.

도 3은 포인트 증착원과 포인트 증착원의 중심에서 벗어난 위치에 설치된 기판의 관계를 개략적으로 도시한 도면. Figure 3 is a schematic view illustrating the relationship of the substrate is installed at a position off-center point of the evaporation source and the point evaporation source.

도 4는 도 3에 도시된 기판과 증착원의 배열 상태에서 기판 표면에 증착막이 형성되는 상태를 도시한 도면. Figure 4 is a view showing a state in which the deposited film is formed on the substrate with the substrate surface in the arrangement of the evaporation source shown in Fig.

도 5는 도 4의 "A"부분의 상세도. 5 is an "A" portion of the detail of Fig.

도 6은 본 발명에 따른 마스크의 저면도. Figure 6 is a bottom view of the mask according to the present invention.

도 7은 도 6의 "BB"선을 따라 절취한 상태의 단면도. Figure 7 is a cross-sectional view of the state cut along the "BB" line in Fig.

도 8은 도 7의 "E" 부분의 상세도. Figure 8 is an "E" details of a portion of Fig.

본 발명은 유기 전계 발광층 형성용 마스크에 관한 것으로서, 특히 기판의 표면에 발광층이 일부 형성되지 않은 샤도우 영역을 현저하게 줄일 수 있도록 구성한 마스크에 관한 것이다. The present invention relates to a mask configured to be related to a mask for an organic EL layer is formed, in particular, significantly reduces the shadow area, the light-emitting layer is not formed on the surface portion of the substrate.

열적 물리적 기상 증착은 증착 재료(예를 들어, 유기물)의 증기로 기판 표면에 발광층을 형성하는 기술로서, 증착원(deposition source) 내에 수용된 증착 재료는 기화 온도까지 가열되며, 증착 재료의 증기는 수용된 증착원 밖으로 이동한 후 코팅될 기판 상에서 응축된다. Thermal physical vapor deposition is a deposition material with a vapor of (for example, organic matter) As a technique of forming a light emitting layer on the substrate surface, the deposition material received in the vapor source (deposition source) is heated to the vaporization temperature, the vapor of the evaporation material is contained evaporation source is condensed on the substrate to be coated to move out.

증착원은 그 형상에 따라 포인트 증착원(point source) 및 선형 증착원(linear source)으로 구분된다. Evaporation source is divided into a point evaporation source (point source) and a linear deposition source (linear source) according to its shape. 도 1은 일반적인 포인트 증착원의 단면도로서, 원통형의 측벽 부재(1B), 원판형의 바닥 부재(1C), 셀 캡(1A) 및 원통형 셀(1D)로 이루어진 포인트 증착원(1)의 내부 구성을 도시하고 있다. 1 is a cross-sectional view of a typical point evaporation source, the internal configuration of the cylindrical side wall members (1B), a disk-shaped bottom member (1C), the cell cap (1A) and a cylindrical cell (1D) point evaporation source (1) consisting of the shows. 셀 캡(1A) 및 셀(1D)로 인하여 형성되는 내부 공간에는 증착 재료(M)인 유기물이 수용되어 있다. The inner space formed due to the cell cap (1A) and the cell (1D) there is accommodated a deposition material (M) organic matter.

측벽 부재(1B) 내부, 즉 측벽 부재(1B)와 셀(1D) 사이에는 셀(1D)의 내부 공간에 수용된 증착 재료(M)를 가열하기 위한 수단(1B-1; 예를 들어, 전원에 연결된 발열 코일)이 위치하고 있다. Side wall members (1B) therein, i.e., the side wall member (1B) and the cell (1D) has means (1B-1 for heating the evaporation material (M) housed in the inner space of the cell (1D) between the; e.g., a power source associated heating coil) is located.

셀 캡(1A)의 중앙부에는 개구(1A-1)가 형성되어 있으며, 측벽 부재(1B)에 장착된 가열 수단(1B-1)에서 발생된 열에 의하여 가열, 기화된 증착 재료(M)의 증기는 이 개구(1A-1)를 통하여 외부, 즉 기판(챔버 내부에 장착된 상태)을 향하여 배출된다. The center of the cell cap (1A) has an opening (1A-1) that is formed, of the heating means is heated, vaporized deposition by the generated in (1B-1) column, the material (M) attached to the side wall members (1B) steam is through the opening (1A-1) discharge towards the outside, that is, the substrate (the state that cartridge is mounted to the inner chamber).

미설명 부호 "11"은 셀 캡(1A)으로 전달된 열의 외부 발산을 막기 위하여 측 벽 부재(1B) 상단에 고정된 금속성 재질의 원판형 커버이며, "11-1"은 셀 캡(1A)의 개구(1A-1)와 대응하는, 커버(11)에 형성된 재료 증기 배출용 개구이다. Reference numeral "11" is a disk-shaped cover of a metallic material fixed to the top of the side wall member (1B) to prevent the external heat dissipation been transferred to the cell cap (1A), "11-1" is the cell cap (1A) of the opening (1A-1) and corresponding to a material for steam discharge opening formed in the cover 11.

일반적인 유기 전계 발광층(이하, "발광층"이라 칭함) 형성 방법은 도 1에 도시된 단일의 증착원을 이용하여 증착 증기를 기판에 분사시키는 소위 "포인트 소스(point source)" 방법이다. Typical organic electroluminescence layer (hereinafter, referred to as "emission layer" hereinafter) is a method of forming so-called "point source (point source)," a method of spraying on the substrate a single vapor deposition using an evaporation source of the illustrated in Fig. 이 방법을 이용한 증착 장치는 기판의 규격(넓이)에 제약이 뒤따르며, 발광층의 두께가 불균일해지는 문제점이 있다. The method using the deposition apparatus will follow after a restriction on the size (area) of the substrate, there is a problem becomes uneven thickness of the light-emitting layer. 기판의 넓이에 관계없이 균일한 두께의 발광층을 형성하기 위한 개선책으로서 기판과 증착원 사이의 거리를 증가하는 방안이 고려되었다. As a remedy for forming the light emitting layer with a uniform thickness regardless of the width of the substrate are considered the ways to increase the distance between the substrate and the evaporation source.

그러나, 기판과 증착원 사이의 거리를 증가시킨 증착 장치를 이용하는 경우에도 동일 기판의 표면일지라도 증착원의 바로 위에 위치하는 부분에 형성된 발광층과 그 외곽에 위치하는 부분에 형성된 발광층의 두께가 다르게 나타날 수 밖에 없으며, 따라서 균일도가 우수한 발광층이 형성된 부분만을 분리하여 사용하게 된다. However, the substrate and the evaporation source is the thickness of the light emitting layer formed in the portion positioned on the light-emitting layer and the outside formed in the right portion that is formed on the even deposition source surface of the same substrate in the case of using the vapor deposition apparatus is increased the distance between may vary not only, and thus is used to remove only the uniformity of the light emitting layer portion is formed high.

도 2는 도 1에 도시된 포인트 증착원과 기판의 관계를 개략적으로 도시한 도면으로서, 편의상 포인트 증착원(1)을 박스 형태로 표현하였으며, 기판(2)과 증착원(1)을 제외한 나머지 부재들의 도시를 생략하였다. Figure 2 is with the exception of the point evaporation source with a view the relationship between a simplified view of the substrate, and was expressed for convenience point evaporation source (1) with box-like substrate 2 and the evaporation source (1) shown in Figure 1 It was omitted from the diagram of the member.

폭 600mm의 기판(2)을 포인트 증착원(1)으로부터 850mm 이격된 위치에 장착하고 증착 공정을 수행한 후, 기판(2) 표면에 형성된 증착막의 두께를 측정하면, 다음과 같은 결론을 얻을 수 있다. After mounting the substrate (2) of width 600mm to 850mm spaced location from the point evaporation source (1) and performs the deposit process, when measuring a vapor-deposited film having a thickness formed on the substrate 2, the surface, to obtain the following conclusions: have.

기판(2)에 형성된 증착막의 두께는 cos 2 θ의 값에 비례한다(여기서, θ는 포인트 증착원(1)의 중심선과 기판(2)의 특정 위치와 포인트 증착원(1)의 중심을 연결하는 가상선과의 각도). Deposited film thickness is proportional to the value of the cos 2 θ (here, θ is connected to the center of the particular location and the point evaporation source (1) of the center line and the substrate (2) of the point evaporation source (1) formed in the substrate (2) the angle of the virtual line to). 따라서, 상술한 조건 하에서의 기판(2)의 중심부에 형성된 증착막의 두께와 에지부에 증착된 증착막의 두께의 비는 약 100 : 89이다. Accordingly, the vapor-deposited film of the ratio of the thickness of the deposition layer deposited on a thickness and an edge portion formed at the center of the substrate (2) under the above-mentioned conditions is about 100: 89.

이와 같이 동일 기판일지라도 증착원(1)과의 거리에 따라 증착막의 두께가 균일하지 않을 경우, 소자마다의 발광 특성에 차이가 나타날 수 밖에 없으며, 따라서 이러한 증착막 두께의 불균일 문제를 해결하는 것이 중요하다. In this manner, when not uniform the vapor-deposited film thickness according to the distance to the same substrate, even if the evaporation source (1), not only can the difference appears in the light emission characteristics of each device, and therefore it is important to correct the non-uniformity problem with this vapor-deposited film thickness .

도 3은 포인트 증착원과 포인트 증착원의 중심에서 벗어난 위치에 설치된 기판의 관계를 개략적으로 도시한 도면으로서, 도 2에 도시된 기판(2)과 증착원(1)의 배치 상태에서 나타나는 문제점을 해결하기 위하기 위하여 기판(2)을 증착원(1)의 중심으로부터 벗어난 위치에 장착한 상태를 도시하고 있다. A view 3 is a schematic illustration of the relationship of the substrate is installed at a position away from the center of the point evaporation source and a point evaporation source, a problem appears in the layout state of the substrate 2 and the evaporation source (1) shown in Figure 2 shows a state in which the mounting board 2 at a position off from the center of the evaporation source (1) to the above address.

600mm의 폭을 갖는 기판(2)을 그 중심이 증착원(1)의 중심으로부터 수평 방향으로 410mm 이격되도록 장착하고 기판(2)을 회전시키지 않은 상태에서 증착 공정을 진행한 후, 기판(2)의 각 부분에서의 증착막 두께를 측정하면 다음과 같은 결론을 얻을 수 있다. After mounting the substrate (2) having a width of 600mm so that the center of the 410mm spacing in the horizontal direction from the center of the evaporation source (1) and proceed with the deposition process in a state that is not rotating the substrate 2, the substrate 2 If the measured thickness of the deposited film from the parts can be obtained as follows;

증착원(1)의 중심과 수직 대응하는 가상 부분에서의 증착막 두께를 100으로 가정하면, Assuming the center of the corresponding vertical deposition film thickness at the virtual portion of the evaporation source 1 to 100,

a) 증착원(1)과 가장 인접한 기판(2)의 에지 부분에서의 증착막 두께 : 98.4 a) evaporation source (1) and the adjacent substrate (2) deposited film thickness at the edge portion of the: 98.4

b) 기판(2)의 중심부에서의 증착막 두께 : 81.1 b) vapor-deposited film thickness at the central portion of the substrate (2): 81.1

c) 증착원(1)에서 가장 멀리 떨어진 기판(2) 에지 부분에서의 증착막 두께 : 58.9 c) the evaporation source (1) farthest away from the substrate 2, the thickness of the deposited film at the edge portion of the: 58.9

정상적인 증착 조건, 즉 기판(2)을 회전시킨 상태에서 증착 공정을 진행한 후, 기판(2) 각 부분에서의 증착막의 두께를 측정하면 다음과 같다. Normal deposition conditions, that is, after the deposition process conducted in a state where rotation of the substrate (2), when measuring the substrate (2) of the deposition layer thickness in each part as follows. 증착원(1)의 중심과 수직 대응하는 가상 부분에서의 증착막 두께를 100으로 가정하면, Assuming the center of the corresponding vertical deposition film thickness at the virtual portion of the evaporation source 1 to 100,

a) 증착원(1)과 가장 인접한 기판(2)의 에지 부분에서의 증착막 두께 : 76.1 a) evaporation source (1) and the adjacent substrate (2) deposited film thickness at the edge portion of the: 76.1

b) 기판(2) 중심부에서의 증착막 두께 : 81.1 b) a substrate (2) deposited film thickness at the center: 81.1

c) 증착원(1)에서 가장 멀리 떨어진 기판(2) 에지 부분에서의 증착막 두께 : 76.1 c) the evaporation source (1) farthest away from the substrate 2, the thickness of the deposited film at the edge portion of the: 76.1

따라서, 기판(2)의 중심부와 에지 부분에서의 증착막 두께의 비율은 100:97이다. Thus, the ratio of the vapor-deposited film thickness at the center and the edge portion of the substrate 2 is 100: 97. 결과적으로 도 3에 도시된 기판(2)과 증착원(1)의 배치 상태에서 기판(2)을 회전시키면서 증착 공정을 진행할 경우, 보다 균일한 두께의 증착막을 얻을 수 있다. As a result, if, while rotating the substrate 2, the substrate 2 in the arrangement of the evaporation source 1 shown in FIG. 3 proceed to the deposition process, it is possible to obtain a vapor deposition film of a more uniform thickness.

그러나, 이러한 배치 상태에서도 다음과 같은 문제점이 발생한다. However, in this arrangement it caused the following problems.

도 4는 도 3에 도시된 기판(2)과 증착원(1)의 배치 상태에서 기판(2)을 회전시키면서 기판(2) 표면에 증착막을 형성하는 상태를 도시한 도면으로서, 기판(2)과 마스크(M)의 관계를 도시하고 있다. Figure 4 is a view showing the state of forming a deposited film on a substrate (2) surface while rotating the substrate 2 in the arrangement of the substrate 2 and the evaporation source (1) shown in Figure 3, the substrate 2 and shows the relationship between the mask (M).

증착막 형성을 위하여 기판(2)의 하부에는 패턴이 형성된 마스크(M)가 위치하며, 이 마스크(M)에 의하여 기판(2) 표면에 소정 형상의 증착막이 형성된다. The location mask (M) has a lower pattern is formed in the substrate 2 to form a deposition film and a deposition layer having a predetermined shape are formed in the substrate 2 surface by the mask (M). 그 러나, 증착원(1)과 마스크(M)의 위치 관계 및 마스크(M)에 형성된 패턴의 형상으로 인하여 기판(2)의 설정된 영역에 원하는 형태의 증착막을 형성할 수 없다. However, the evaporation source (1) and can not form a deposited film of a desired shape on a predetermined area of ​​the mask (M) and located between the mask (M) substrate 2 due to the shape of the pattern formed on the.

도 5는 도 4의 "A"부의 상세도로서, 편의상 기판(2)의 일부 및 마스크(M)에 형성된 어느 하나의 패턴(m)만을 도시하였으며, 또한 각 부재의 절단면에 대하여 단면 처리를 하지 않았다. 5 was shown only one of the pattern (m) formed on a diagram in detail of "A" portion 4, the portion and the mask (M) for the sake of convenience the substrate (2), and not the section processing on the cut surface of each member It did.

도 5에 도시된 바와 같이, 마스크(M)의 각 패턴(m)은 그 양 측벽들이 마스크(M)에 대한 수직선(C)선에 대하여 외측으로 일정한 각도(W) 경사진 상태로 형성된다. Each pattern (m) of the mask (M) as shown in Figure 5 is formed at an angle (W) inclined to the outside with respect to a vertical line (C) line for the side walls to the mask (M).

이와 같은 패턴(m)의 형상에 의하여 마스크(M) 표면에 대하여 (수직이 아닌) 경사각도를 갖고 유동하는 증착 증기는 마스크(M)에 형성된 패턴(m)의 (증착원을 향하는) 가장자리에 의하여 그 흐름이 차단된다. As in respect to the mask (M) surface by a shape of the same pattern (m) (non-vertical) deposition vapor that tilt angle the flow has a degree of (toward the evaporation source) of the pattern (m) formed on the mask (M) edge its flow is blocked by.

따라서 기판(2) 표면에서, 마스크(M)의 패턴(m)에 의하여 노출된 부분일지라도 증착막이 형성되지 않는 샤도우(shadow) 현상이 발생한다(도 4의 "S" 부분). Therefore, the substrate 2 on the surface, even if the part exposed by the pattern (m) of the mask (M) and the shadow (shadow) phenomenon occurs that the deposition layer is not formed ( "S" part in FIG. 4). 이와는 반대로, 마스크(M)에 의하여 노출되지 않은 영역임에도 불구하고 증착 증기가 유입되어 증착막이 형성되지 않아야 할 영역에 증착막이 형성된다(도 4의 "N" 부분). In contrast, even though the unexposed area by the mask (M) and the deposition vapor flows into the vapor-deposited film is formed in a region that should not be vapor-deposited film is not formed ( "N" of FIG. 4). 결과적으로, 도 5에 도시된 바와 같이, 기판(2)의 증착막 형성 예정 위치(D)로부터 벗어난 위치(d)에 증착막이 형성되는 것이다. As a result, the deposited film will be formed at the position (d) off, from the deposited film forming predetermined position (D) of the substrate 2 as shown in Fig.

이러한 현상은 (마스크가 장착된) 기판(2)이 회전하여 증착원과의 근거리부와 원거리부의 위치가 역전되는 경우에도 동일하게 발생한다. This phenomenon occurs even when the same (the mask is equipped with a) a substrate (2) is rotated by reversing the near portion and distance portion and the position of the evaporation source.

이와 같이, 기판의 불필요한 영역에 증착막이 형성되는 현상, 예를 들어, B 계열의 유기물 증착막 일부에 중첩된 상태로 G 또는 R 계열의 유기물 증기가 증착되는 현상 및 증착막이 형성되어야 할 영역에 증착막이 형성되지 않는 현상은 증착 공정을 기초로 하여 진행되는 후 공정에 심각한 영향을 미치게 되며, 결과적으로 소자의 불량을 야기하게 된다. Thus, the phenomenon that the deposition layer is formed in unnecessary areas of the substrate, for example, a vapor deposition film on the organic material deposition layer region organics to steam should be the development and the vapor-deposited film formed to be deposited of some G or R series in a nested state in the B type phenomenon is not formed is effect a significant impact on the process after that proceeds on the basis of the deposition process, and consequently to cause the failure of the device.

본 발명은 유기 전계 발광층을 형성하기 위한 과정에서 발생되는 상술한 문제점을 해결하기 위한 것으로, 기판 전체 표면에 균일한 증착막을 형성함과 동시에 설정된 영역에 증착막이 형성되지 않는 샤도우 현상을 현저하게 줄일 수 있는 마스크를 제공하는데 그 목적이 있다. The present invention can significantly reduce that in order to solve the above problems, that is vapor-deposited film is not formed in the area set at the same time as forming a uniform deposition film on the entire surface of the substrate shadow effects in the process for forming the organic electroluminescence layer to provide a mask that has a purpose.

상기 목적을 실현하기 위한 본 발명에 따른, 개구 형태의 패턴들이 형성된 슬롯형 마스크는 중앙부에 형성된 패턴의 양 측벽들 및 전후방 측벽들의 경사 각도는 동일하되, 이 중앙 패턴을 기준으로 증착원에 가까운 패턴일수록 양 측벽들 중 증착원에 가까운 측벽의 경사 각도는 점차적으로 증가하는 반면, 증착원에서 먼 측벽의 경사 각도는 점차적으로 감소하며, 전방 측벽의 경사 각도는 증착원에 인접한 패턴일수록 점차적으로 증가되는 반면, 증착원으로부터 먼 패턴일수록 점차적으로 감소하고, 후방 측벽의 경사 각도는 증착원에 인접한 패턴일수록 점차적으로 작아지는 반면, 증착원으로 먼 패턴일수록 증가하여, 모든 패턴들은 중앙 패턴을 포함하는 패턴열을 중심으로 대칭된 구조를 이룬다. According to the invention for realizing the above objects, the amount of the inclination angle of the sidewalls and front and rear side walls of the opening form of the patterns are slot-like mask pattern formed in the central portion thus formed, but the same, relative to the central pattern close patterns to the evaporation source the more positive the other hand, the inclination angle of the near wall to the side wall of the evaporation source of which is gradually increased, the inclination angle of the long side walls from the evaporation source is, and gradually reduced, the inclination angle of the front side wall is increased gradually, the more the adjacent pattern in the evaporation source on the other hand, the more distant pattern from the evaporation source to gradually decrease, while the inclination angle of the rear side wall is the more adjacent patterns in the evaporation source gradually becomes smaller, the increase in the more distant pattern as the evaporation source, all the patterns are heat pattern comprising a central pattern form a symmetrical structure around the.

이하, 본 발명을 첨부한 도면을 참고하여 상세히 설명한다. Hereinafter, reference to the accompanying drawings, the present invention will be described in detail.

증착막을 형성하기 위하여 사용되는 마스크는 패턴의 형상에 따라 그릴형(gille type)과 슬롯형(slot type)으로 구분되나, 본 발명은 슬롯형 마스크에 적용된다. The mask used to form the deposited film, but is divided into lattices (gille type) and slotted (slot type) according to the shape of the pattern, the present invention is applied to a slot-like mask.

도 6은 본 발명에 따른 마스크의 저면도, 도 7은 도 6의 선 "BB"을 따라 절취한 상태의 단면도로서, 도 6 및 도 7에는 편의상 일부의 패턴(m0 및 m1)만을 나타내었으며, 각 패턴의 형상을 단순하게 도시하였다. Figure 6 were only shown a bottom view, FIG. 7, the part pattern (m0 and m1) for convenience as a cross-sectional view of the state cut along the line "BB" in Fig. 6, Fig. 6 and 7 of the mask according to the invention, the shape of each pattern was simply shown.

또한, 도 6 및 도 7에서는 기판의 양측 하부에 설치된 2개의 증착원(S1 및 S2)을 도시하고 있다. In addition, it shows two evaporation source (S1 and S2) are installed on both sides of the lower substrate in Figs. 한편, 마스크(M1)의 하부에 위치하는 2개의 증착원(S1 및 S2)은 마스크의 2개의 코너부에 대응한다. On the other hand, the lower two evaporation source (S1 and S2) which is located on the mask (M1) corresponds to the two corners of the mask.

본 발명에 따른 마스크(M1)의 가장 큰 특징은 마스크(M1) 표면에서의 가상 수직선에 대하여 각 패턴(m1)을 한정하는 양 측벽들의 각도를 달리 구성한 것이다. The greatest feature of the mask (M1) according to the present invention is configured, otherwise the angle of the side walls to define each pattern (m1) with respect to a virtual vertical line of the mask surface (M1).

즉, 각 패턴(m1)을 한정하는 양 측벽들중, 증착원(S1 또는 S2)과 가까운 측벽(이하, 편의상 "제 1 측벽"이라 함)의 경사 각도(W1; 즉, 마스크(M1) 표면에서의 가상 수직선(도 8의 "C")과 측벽 간의 각도)를 그 반대쪽 측벽 (이하, 편의상 "제 2 측벽"이라 함)의 경사 각도(W2; 즉, 마스크(M1) 표면에서의 가상 수직선(도 8의 "C")과 측벽 간의 각도)보다 크게 형성하였다. That is, the inclination angle (W1 of each pattern (m1) both side walls of the evaporation source (S1 or S2) and close to the side wall (hereinafter referred to for convenience "the first side wall") that defines a; that is, a mask (M1) surface virtual vertical angle between (the "C" FIG. 8) and side walls) to the opposite side wall (hereinafter, for convenience, "the second side wall," the inclination angle (W2 of quot;); that is, a mask (M1) on the virtual vertical line of the surface were formed larger than the angle between (the "C" FIG. 8) and the side wall).

도 8은 도 7의 "E" 부분의 상세도로서, 어느 한 패턴의 구조에 따른 증착 재료 증기의 유입 상태를 설명하고 있다. Figure 8 is a "E" Details of a portion of Figure 7, describes the state of the inlet vapor deposition material according to the structure of any one pattern.

도 5에 도시된 패턴(m) 구조와 비교할 때, 도 6 및 도 8에 도시된 구조의 패턴(m1)에서는 제 1 측벽의 경사 각도(W1)가 커지며, 따라서 증착 재료 증기의 유입 각도는 제 1 측벽 방향(증착원 방향)으로 넓어지게 된다. Inflow angle of the pattern (m) as compared to the structure 6 and the pattern (m1) of the structure becomes larger the inclination angle (W1) of the first side wall, and therefore the evaporation material vapor shown in Figure 8, shown in Figure 5 is a It becomes wider in one side wall direction (direction of an evaporation source). 따라서 본 발명에 따른 마스크(M1)를 이용하여 증착 공정을 수행한 후에는 기판(2)의 증착막 형성 예정 위치(D)로부터 크게 벗어나지 않고 증착막(d)이 형성되어 샤도우 영역이 현저하게 감소된다. Therefore, after performing a deposition process using a mask (M1) according to the present invention, the deposition layer (d), without significantly departing from the deposition layer to form the intended position (D) of the substrate (2) is formed are significantly reduced the shadow area.

한편, 도 7에 도시된 바와 같이 슬롯형 마스크(M1)는 그 기본 부재에 일정한 면적의 패턴(m0, m1)이 다수 형성되어 있다. On the other hand, the slot-like mask (M1) as shown in Figure 7 is formed in a predetermined pattern a number (m0, m1) of the area on the base member. 따라서, 패턴들(m1)의 위치, 즉 증착원(S1 및 S2)간의 거리에 따라 각 패턴(m1)을 한정하는 각 격벽의 각도를 점차적으로 달리해야만 하다. Thus, the position of the pattern of (m1), that is it must otherwise the angle of each partition wall to define each pattern (m1), depending on the distance between the evaporation source (S1 and S2) by gradually.

먼저, 기판의 회전 중심에 해당하는 마스크(M1)의 중앙부에 형성된 패턴(m0)은 4개의 측벽이 동일한 경사 각도를 갖고 있으나, 이 중앙 패턴(m0)을 주변에 위치한 패턴들(m1)은 4개의 측벽들이 다른 경사 각도를 갖는다. First, a pattern (m0) formed in the central portion of the mask (M1) for the rotational center of the substrate, but has the same inclination angle of four side walls, the central pattern pattern located around the (m0) (m1) is 4 of the side wall to have a different slope angle.

2개의 증착원들(S1, S2)과 동일한 거리에 있는 중심열(K)의 패턴들은 중앙 패턴(m0)과 같이 양측 측벽들의 각도가 동일한 반면에, 증착원(S1 또는 S2)과 가까운 전방 측벽의 경사 각도(W1)는 증착원에 가까운 패턴에서 가장 크고 먼 패턴으로 갈수록 점차적으로 감소한다. Two vapor deposition source of (S1, S2) and the pattern of the center column (K) in the same distances as close to the front side wall on the other hand, the angle of both sides of the side wall as a central pattern (m0) the same evaporation source (S1 or S2) inclination angle (W1) is increasingly gradual reduction of the largest and most distant from the pattern on the pattern near the evaporation source. 또한, 증착원과 먼 후방 측벽의 경사 각도(W2)는 증착원에 가까운 패턴에서 가장 작고 먼 패턴으로 갈수록 점차적으로 증가한다. Further, the inclination angle (W2) of the far back side wall and the evaporation source is gradually increases toward the small and distant from the pattern on the pattern near the evaporation source.

결과적으로 중심열(K)의 패턴들은 중앙 패턴(m0)을 기준으로 대칭 상태를 이룬다. As a result, the pattern of the center column (K) may form a symmetric state relative to the central pattern (m0).

한편, 패턴들중 중심열(K)을 기준으로 제 1 증착원(S1)과 가까운 패턴들의 양측벽중 제 1 증착원(S1)에 가까운 측벽의 경사 각도(W1)는 제 1 증착원에 가까운 패턴일수록 점차적으로 증가하며, 그 반대 측벽의 경사 각도(W1)는 제 1 증착원(S1)에 가까운 패턴일수록 점차적으로 감소한다. On the other hand, the patterns around the center column (K) of the first evaporation source inclination angle (W1) of the side wall close to the first evaporation source (S1) of the side walls of close pattern (S1) is close to the first evaporation source the more pattern increases gradually, and the inclination angle (W1) of the opposite side wall is reduced gradually shorter the distance from the pattern to a first evaporation source (S1).

또한 제 1 증착원(S1)에 가까운 패턴의 전방 측벽의 경사 각도(W1)는 제 1 증착원(S1)에 가장 가까운 패턴에서 제일 크게 나타나며, 가장 먼 패턴에서는 가장 작게 나타난다. Further, the first evaporation source angle of inclination of the front side wall of the pattern close to (S1) (W1) is the first appears at the closest pattern to the evaporation source (S1) most significantly, when the smallest in the distant pattern. 반면에, 제 1 증착원(S1)에 가까운 패턴의 후방 측벽)의 경사 각도(W2)는 제 1 증착원(S1)에 가장 까가운 패턴에서 제일 작게 나타나며, 가장 먼 패턴에서는 가장 크게 나타난다 On the other hand, the first inclination angle (W2) of the vapor source close to the rear side wall of the pattern in (S1)) appears in the first small how gown pattern to a first evaporation source (S1), the furthest pattern appears most significantly

제 2 증착원(S2)과 가까운 패턴들은 중앙 패턴(m0)을 포함하는 중심열(K)을 기준으로 제 1 증착원(S1)과 가까운 패턴들의 구조와 대칭적인 구조를 갖는다. Second pattern near the evaporation source (S2) have the structure and the symmetrical structure of the first evaporation source close pattern (S1) on the basis of the center column (K) comprising a central pattern (m0).

마스크(M1)의 패턴들(m0 및 m1)을 위와 같이 구성하고 또한 배치함으로서 기판과 함께 마스크(M1)가 회전하더라도 모든 패턴들(m0 및 m1)은 증착원(S1 및 S2)들에 대하여 도 8과 같은 조건에 놓이게 된다. The pattern of the mask (M1) (m0 and m1) to be constituted as above, and further rotation of the mask (M1) together and by placing the substrate in any pattern (m0 and m1) is also with respect to the evaporation source (S1 and S2) 8 are subjected to conditions such as.

이상과 같은 본 발명에 따른 슬롯형 마스크는 기판 전체 표면에 걸쳐 균일한 두께의 증착막을 형성함과 동시에 증착막이 형성되지 않는 샤도우 영역의 면적을 현저하게 감소시킬 수 있다. Slot-mask according to the present invention as described above can significantly reduce the area of ​​the shadow area that is vapor-deposited film is not formed at the same time as forming a deposited film of a uniform thickness over the entire surface of the substrate.

위에 설명된 예시적인 실시예는 제한적이기보다는 본 발명의 모든 관점들 내에서 설명적인 것이 되도록 의도되었다. The illustrative embodiments described above are intended to be within the description of all aspects of the invention rather than limiting. 따라서 본 발명은 본 기술 분야의 숙련된 자들에 의하여 본 명세서 내에 포함된 설명으로부터 얻어질 수 있는 많은 변형과 상세한 실행이 가능하다. Accordingly, the present invention is capable of many variations and detailed execution which can be obtained from the description contained in this specification by those skilled in the art. 다음의 청구범위에 의하여 한정된 바와 같이 이러한 모든 변형과 변경은 본 발명의 범위 및 사상 내에 있는 것으로 고려되어야 한다. All such changes and modifications as defined by the following claims should be considered to be within the scope and spirit of the invention.

Claims (1)

  1. 기판 하부에 위치한 2개의 증착원으로부터 공급된 증착 재료 증기를 통과시켜 회전하는 기판 표면에 패터닝된 증착막을 형성하기 위하여 사용되며, 개구 형태의 패턴들이 형성된 슬롯형 마스크에 있어서, Is used to form a deposition layer is patterned on the surface of the substrate rotating by passing the vapor deposition material supplied from the evaporation source 2 is located on the lower substrate, in a slotted mask to form an opening of a pattern formed,
    중앙부에 형성된 패턴의 양 측벽들 및 전후방 측벽들의 경사 각도는 동일하되, 이 중앙 패턴을 기준으로 Positive angle of inclination of the sidewalls and front and rear side walls of the pattern formed in the central portion is the same, but, on the basis of the central pattern
    증착원에 가까운 패턴일수록 양 측벽들 중 증착원에 가까운 측벽의 경사 각도(W1)는 점차적으로 증가하는 반면, 증착원에서 먼 측벽(W2)의 경사 각도는 점차적으로 감소하며, While the inclination angle (W1) of the side wall close to the evaporation source of the more the side walls close to the pattern on the evaporation source is gradually increased, the angle of inclination of the long side wall (W2) in the evaporation source is gradually decreased and,
    전방 측벽의 경사 각도는 증착원에 인접한 패턴일수록 점차적으로 증가되는 반면, 증착원으로부터 먼 패턴일수록 점차적으로 감소하고, The more the angle of inclination of the front side wall is adjacent to the pattern, while the evaporation source is gradually increased, the more distant from the evaporation source pattern gradually decreases,
    후방 측벽의 경사 각도는 증착원에 인접한 패턴일수록 점차적으로 작아지는 반면, 증착원으로 먼 패턴일수록 증가하여, , While the inclination angle of the rear side wall is the more adjacent patterns in the evaporation source gradually becomes smaller, the increase in the more distant pattern as the evaporation source,
    모든 패턴들은 중앙 패턴을 포함하는 패턴열을 중심으로 대칭된 구조를 이루는 것을 특징으로 하는 슬롯형 마스크. All patterns are slot-like mask, characterized in that forming a symmetrical pattern around the column containing the central pattern.
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US9534288B2 (en) 2013-04-18 2017-01-03 Samsung Display Co., Ltd. Deposition apparatus, method of manufacturing organic light-emitting display apparatus by using same, and organic light-emitting display apparatus manufactured by using deposition apparatus
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US8962360B2 (en) 2013-06-17 2015-02-24 Samsung Display Co., Ltd. Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the organic layer deposition apparatus
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