KR20060079726A - Continuous surface-treating apparatus for film shape of polymer and continuous surface-treating method thereof - Google Patents

Abstract

The present invention relates to a film-like polymer processing apparatus and a method for treating the same, and more particularly, a plasma sheath is formed to conform to the shape of the film-like polymer, and thus the film-like polymer processing apparatus is improved in hardness and surface conductivity of the polymer to be treated. And a processing method thereof.

The present invention, the processing chamber which is generally cylindrical in shape, and can form a closed space therein; A main roll disposed at the center of the treatment chamber and configured to move the film-like polymer around its outer periphery; A high frequency power supply comprising a high frequency power supply, a matching box, and an antenna, the high frequency power supply supplying high frequency power to generate a plasma in the processing chamber; A process gas supply unit configured to include a process gas supply source, a process gas supply path, and a flow rate adjusting means, and supply a process gas constituting a plasma generated in the process chamber; A pumping unit for reducing the inside of the process chamber to a vacuum state; Negative voltage generator, a grid (grid), consisting of; grid portion for focusing ions; comprising, wherein the antenna and the grid is provided with a film-like polymer processing apparatus, characterized in that provided spaced 250 ~ 400 mm do.

Film polymer, plasma, plasma sheath, surface treatment

Description

Film-like polymer processing apparatus and its processing method TECHNICAL FIELD

1 is a cross-sectional view showing the structure of a film-form polymer processing apparatus according to an embodiment of the present invention.

2 is a cross-sectional view showing the structure of a processing chamber according to an embodiment of the present invention.

3 is a cross-sectional view showing the structure of a processing chamber according to another embodiment of the present invention.

4 is a process chart showing each step of the film-like polymer treatment method according to the embodiment of the present invention.

<Description of Symbols for Major Parts of Drawings>

1: film-like polymer processing apparatus according to an embodiment of the present invention

10: loading chamber 20: pretreatment chamber

30: first processing chamber 40: second processing chamber

50: unloading chamber 60: vacuum pump

70: guide roll

12: loading roll 14, 54: opening

16, 56: gate 22, 32, 42: high frequency power supply

24, 34, 44: process gas supply part 26, 36, 46: grid part

38, 48: mail roll 31, 33: carbon ring polymer forming portion

The present invention relates to a film-like polymer processing apparatus and a method for treating the same, and more particularly, a plasma sheath is formed to conform to the shape of the film-like polymer, and thus the film-like polymer processing apparatus is improved in hardness and surface conductivity of the polymer to be treated. And a processing method thereof.

Polymer materials are very versatile and widely used due to their light weight, formability and processability, transparency, and electrical insulation. Such a polymer material has a need to improve only surface properties without changing the properties of the entire polymer material according to the purpose of use. In particular, the hydrophilicity or hydrophobicity of the surface has a decisive influence on the wettability, printability, colorability, biocompatibility, antistatic property, adhesion, waterproofness, and moisture resistance of the polymer material. Various methods are used.

Examples of the surface modification method of the polymer material include chemical treatment, corona treatment, plasma treatment, and the like. Among these, plasma treatment is a polymer treatment method using plasma at low pressure.

Plasma is considered a fourth state of matter and means a partially ionized gas. Its constituents are electrons, cations and neutral and heavy atoms. When energy is applied to a gas particle, the gas particle has a positive charge because the outermost electron is out of orbit and becomes a free electron. Thus formed electrons and a large number of ionized gases gather to maintain electrical neutrality as a whole, by the interaction between the constituent particles emit a unique light and the particles are activated to have a high reactivity. Plasma treatment method using the plasma has the advantage that can select the reaction gas and control the process parameters, such as the treatment pressure compared to the corona treatment method.

Conventional plasma processing methods include techniques for improving the surface hardness of metals using ion beams or plasma nitriding. In recent years, plasma ion implants and the like have been applied to metals and polymers.

However, the prior art has a problem that the surface conductivity distribution of the polymer is not constant because the ion is not injected into the side and the bent portion when the ion is injected into the film-like polymer. This is because the shape of the plasma sheath does not form as curved as the polymer surface.

In addition, since the ion implantation depth is low, H ₂ O is dissociated to the surface of the polymer, or the double bond and network bonding strength are weakened, and thus, the surface conductivity is remarkably decreased when time passes or the temperature is increased.

SUMMARY OF THE INVENTION An object of the present invention is to provide a film-like polymer processing apparatus in which a problem such as a drop in surface conductivity does not occur even if a predetermined time passes or the temperature rises.

Another object of the present invention is to provide a film-like polymer treatment method capable of mass treatment without a problem such as a drop in surface conductivity even if a certain time passes or the temperature rises.

In order to achieve the above object, the present invention, the processing chamber which is formed in a cylindrical shape as a whole, a closed space therein; A main roll disposed at the center of the treatment chamber and configured to move the film-like polymer around its outer periphery; A high frequency power supply comprising a high frequency power supply, a matching box, and an antenna, the high frequency power supply supplying high frequency power to generate a plasma in the processing chamber; A process gas supply unit configured to include a process gas supply source, a process gas supply path, and a flow rate adjusting means, and supply a process gas constituting a plasma generated in the process chamber; A pumping unit for reducing the inside of the process chamber to a vacuum state; Negative voltage generator, a grid (grid), consisting of; grid portion for focusing ions; comprising, wherein the antenna and the grid is provided with a film-like polymer processing apparatus, characterized in that provided spaced 250 ~ 400 mm do.

In addition, in the present invention, it is preferable that a plurality of grids are provided in the grid portion, and the distance between the grids is 30 to 90 mm so that another plasma is not formed in the plasma.

In addition, the process gas in the present _{invention, C 2 H 2, CH 4} , Ar +, N 2 +, CH 4 in the plasma by a multi-component process gas consisting of H ₂ ^- is preferable that the content of high.

In this case, the composition ratio of the multi-component process gas is preferably C ₂ H ₂ : H ₂ is 80:20, CH ₄ : H ₂ is 70:30, Ar ⁺ : H _{2 It} is 90:10.

In the present invention, the main roll is composed of a cold and hot water main roll that can control the temperature of the film-like medium to move around the outer periphery, to maintain the best processing conditions by maintaining the temperature of the film-like polymer most suitable for plasma treatment Do it.

Further, in the present invention, it is preferable to provide the grid as a semi-circular grid disposed 10 to 100 mm apart from the outer circumference of the main roll, since the arc can be prevented from occurring due to the potential difference generated on the surface of the film-like polymer. Do.

In the present invention, the treatment chamber is provided with a multiple treatment chamber composed of a first treatment chamber and a second treatment chamber, wherein the first treatment chamber treats one surface of the film-like polymer, and the second treatment chamber is formed of the film-like polymer. By treating the other side, both sides of the film-like polymer are treated identically.

In the present invention, further connected to the processing chamber is further provided with a pretreatment chamber, the pretreatment chamber,

 A high frequency power supply comprising a high frequency power supply, a matching box, and an antenna, the high frequency power supply supplying high frequency power to generate plasma in the processing chamber;

 A process gas supply unit, comprising a process gas supply source, a process gas supply passage, and a flow rate adjusting means, for supplying a process gas constituting a plasma generated in the process chamber;

 A pumping portion for reducing the inside of the process chamber to a vacuum state;

 A negative voltage generator, a grid configured to focus ions; and the antenna and the grid are formed of a linear antenna and a grid to remove moisture and gas present in the three-dimensional object, thereby treating the chamber. This greatly reduces the processing time in the system and enables a large amount of processing.

In addition, in the present invention, the loading chamber is connected to the pretreatment chamber and receives the film-like polymer from the outside and supplies the pre-treatment chamber to the pretreatment chamber; An unloading chamber connected to the processing chamber and receiving the film-form polymer processed in the processing chamber and carrying it out to the outside; The loading chamber and the unloading chamber are further provided, and the loading roll and the unloading roll capable of winding the film-like polymer are disposed in the center of the loading chamber and the unloading chamber, respectively, thereby automatically loading and unloading the three-dimensional object to be processed. Therefore, it is desirable to allow the entire process to be automated by automatically moving at a constant speed between each process.

In addition, the present invention,

1) introducing a film-like polymer having a polymer formed on the surface thereof to an atmospheric pressure loading chamber, and making the loading chamber into a vacuum state;

2) lowering the pressure inside the loading chamber to make a vacuum, and bringing the film-like polymer into a pretreatment chamber maintained in a vacuum state;

3) removing water (H ₂ O) and gas present in the film polymer using plasma in the pretreatment chamber;

4) bringing the film-like polymer into a process chamber maintained in vacuum;

5) treating the surface of the film-like polymer using plasma in the treatment chamber;

6) discharging the film-like polymer into a vacuum unloading chamber, and discharging the film-like polymer to the outside in a state where the pressure of the unloading chamber is raised to atmospheric pressure; To

It provides a film-like polymer treatment method comprising.

In the present invention, in the step 3), the surface conductivity of the film-like polymer is treated to be maintained at 10 ⁶ ~ 10 ⁹ Ω / cm ² , thereby shortening the treatment time in the step 5), and easy treatment process It is desirable to.

In addition, the step 5), the surface conductivity of the film-like polymer is preferably treated to maintain a 10 ^-6 ~ 10 ^-4 Ω / cm ² to produce a superconductor.

In the present invention, the step 5), the first treatment step of treating one surface of the film-like polymer; and the second treatment step of treating the other surface of the film-like polymer; This is treated the same.

Hereinafter, with reference to the accompanying drawings will be described in detail a specific embodiment of the present invention.

First, the film-form polymer processing apparatus 1 which concerns on a present Example is demonstrated with reference to FIG. 1: is a schematic cross section which shows the structure of the film-form polymer processing apparatus 1 which concerns on a present Example. The film polymer processing apparatus 1 according to the present embodiment includes a loading chamber; Pretreatment chamber; Processing chamber; It is composed of an unloading chamber. In this case, two or more processing chambers may be provided. In this embodiment, the processing chamber is provided in a multiple processing chamber structure in which the first processing chamber and the second processing chamber are provided adjacent to each other.

Each chamber is provided with a vacuum pump 60 for forming the inside of the chamber at low vacuum. In this embodiment, the vacuum pump 60 is provided with a rotary pump and a mechanical booster pump. Rotary pumps and mechanical booster pumps can produce pressures of up to 10 ^-3 Torr. In addition, in order to lower the pressure in the chamber to about 10 ^-6 Torr, it is preferable that a turbo and cryo pump are further provided. Such turbo and cryo pumps are not required to be provided in the loading chamber 10 and the unloading chamber 50, and are preferably provided because high vacuum is required in the pretreatment chamber 20 and the processing chambers 30 and 40.

And in this embodiment, each chamber is connected to each other, but the remaining space is blocked by a bracket (not shown in the drawing) leaving only the minimum space for the film-like polymer can move to prevent plasma scattering.

First, the loading chamber 10 is a component that receives the film-like polymer (M) from the outside to supply to the pretreatment chamber (20). That is, after receiving the film-form polymer (M) from the exterior of atmospheric pressure, the inside is made into a vacuum state and the film-form polymer is supplied to the adjacent pretreatment chamber 20. The film-like polymer M supplied into the loading chamber 10 is wound and disposed on the loading roll 12 and introduced into the pretreatment chamber 20 by the guide roll 70. Here, the guide roll 70 is provided with a sensor (not shown in the drawing) capable of sensing the tension of the film-like polymer (M), and the film-like while adjusting the rotational speed to move the film-like polymer with a constant tension The polymer (M) is transferred to the pretreatment chamber 20.

Next, the pretreatment chamber 20 is provided adjacent to the loading chamber 10, receives the film-like polymer M from the loading chamber 10, and is configured to pretreat the film-like polymer M using plasma. Element. In the pretreatment chamber 20, plasma is applied to the film polymer to remove water (H ₂ O) and gas present in the film polymer, and to maintain the surface conductivity of 10 ⁶ to 10 ⁷ Ω / cm ² . Process. Therefore, the pretreatment chamber 20 is provided with facilities for generating plasma therein. That is, the high frequency power supply unit 22 including the high frequency power supply device 22a, the matching box 22b, and the antenna 22c is provided, and the process gas supply source 24a, the process gas supply path 24b, and the flow rate control are provided. The process gas supply part 24 comprised of the means 24c is provided. In addition, a grid portion 26 composed of a negative voltage generator 26a and a grid 26b is also provided to form a plasma suitable for the shape of the three-dimensional molded object.

Here, the high frequency power supply device 22a preferably supplies 100-1000 W of RF power to the pretreatment chamber 20. Typically, when the RF power is 1000W, the ion generation density appears to be the highest. The antenna 22c and the grid 26b are provided with a straight antenna and a grid. Here, the linear antenna and grid refer to an antenna and a grid formed in a plate shape having a straight cross section as shown in FIG. 1. The distance between the antenna 22c and the grid 26b is preferably 250 to 350 mm. This is to ensure proper ion activity distance. In the plasma, energy is applied to a gas atom, and the outermost valence of the gas atom is out of the orbit, and free electrons are formed. At this time, ions such as cations, anions, and electrons are generated. This is because the working distance of these ions is very important to achieve this. And this antenna 22c is arrange | positioned adjacent to the both side walls of the preprocessing chamber 20, as shown in FIG. In addition, a plurality of grids 26b are disposed therebetween, each of which forms a pair of two grids, and the pair of grids is provided at predetermined intervals so that the film-like polymer can be passed at a predetermined distance therebetween. .

In addition, the grid 26b according to the present embodiment preferably maintains a distance between 30 and 90 mm between the grids. This is to allow the plasma sheath to be bent along the curvature of the film-like polymer and also to prevent another plasma from forming in the plasma. And a negative voltage pulse power is applied to the grid 26b, which is for injecting a cation for treating the film-like polymer into the film-like polymer (M).

In addition, the present embodiment is to supply a multi-component process gas consisting of C ₂ H ₂ , CH ₄ , Ar ⁺ , N ₂ ⁺ , H ₂ from the process gas source 24a. This is to increase the content of CH ₄ in the plasma generated. At this time, the composition ratio of the multi-component process gas is preferably C ₂ H ₂ : H ₂ is 80:20, CH ₄ : H ₂ is 70:30, Ar ⁺ : H ₂ is 90:10.

In addition, a plurality of guide rolls 70 are provided in the pretreatment chamber 20 to guide the movement path of the film polymer M and to move the film polymer while maintaining a constant tension. This guide roll 70 allows the film-like polymer (M) to pass through at a constant distance from the grid as it passes between a pair of grids, as shown in FIG. Provide path and speed of movement.

Next, the structure and function of the 1st process chamber 30 are demonstrated. As illustrated in FIG. 1, the first processing chamber 30 is generally cylindrical in shape and has a structure capable of forming a sealed space therein. The first processing chamber 30 is provided with components having the same function as the pretreatment chamber 20 described above. That is, the high frequency power supply unit 32, the process gas supply unit 34, the pumping unit 60c, and the grid unit 36 are provided in the same manner as that of the first processing chamber 30. However, the antenna 32c and the grid 36b are provided with a semicircular antenna and a grid unlike those of the pretreatment chamber 20. Here, the semi-circular antenna and the grid, as shown in Figure 1, refers to the antenna and the grid provided in a semi-circular shape of a semi-circular cross section. This is to allow the surface of the film-like polymer to be sufficiently treated by allowing the film-like polymer to pass for a predetermined time in the space where the plasma is formed.

In addition, unlike the pretreatment chamber 20, the main roll 38 is disposed in the center of the first processing chamber 30. This main roll 38 is a component which arrange | positions so that the film-form polymer processed in the 1st process chamber 30 may be suitably processed. That is, as shown in FIG. 1, it is provided in the cylinder shape in the center part of the 1st process chamber 30, and the film-like polymer M is wound and moved to the outer peripheral part. Thus, one surface of the film-like polymer is treated while the film-like polymer M is wound around and moved on the main roll 38. At this time, the distance between the main roll 38 and the grid 36b has a very important influence on the degree of treatment of the film-like polymer. In this embodiment, the grid is arranged such that the distance between the main roll and the grid is 10 to 100 mm.

In addition, the temperature of the film-like polymer while moving around the main roll 38 is also an important factor in the degree of treatment of the film-like polymer (M). That is, if the temperature of the filmy polymer is too high or too low during the treatment, no plasma treatment may be made to the filmy polymer. Therefore, it is preferable to provide the temperature control means which can control the temperature of a film-form polymer inside this main roll 38. As shown in FIG. In this embodiment, the main roll is configured as a cold / hot water main roll so that the temperature of the film-like polymer can be controlled by allowing cold water or hot water to flow inside the main roll.

And it is preferable that the carbon ring polymer formation part is further provided in the process chamber 30 which concerns on a present Example. The carbon ring polymer forming part serves to supply a specific organic material into the processing chamber and ionize in the plasma, and to form a polymer in which a stable carbon ring is formed with ions generated from an inert gas. The carbon ring polymer thus formed is ion implanted into the film polymer to improve the surface properties of the film polymer.

This embodiment discloses this carbocyclic polymer formation in two ways.

In the first method, as shown in FIG. 2, the carbon ring polymer forming unit includes an inert gas source, an organic material source, and an injector, and supplies an inert gas and an organic material into the process chamber to form a stable carbon ring polymer. to be.

The organic source here is comprised of a bubbler 31b and a vaporizer 31c. The bubbler 31b serves to bubble the multivalent organic material filled therein. The vaporizer 31c is coupled to the rear end of the bubbler 31b and serves to vaporize the organic material bubbled from the bubbler 31b.

The vaporized polyvalent organic material is supplied into the process chamber 30 by the movement of the inert gas supplied from the inert gas source 31a. Therefore, the inert gas also serves as a carrier gas. Therefore, the inert gas source 31a is coupled to the front end of the bubbler 31b to supply the inert gas to the bubbler and the vaporizer.

The vaporized polyvalent organic material is sprayed through a special injector (not shown in the drawing) into the processing chamber 30 in which high vacuum (10 ^-4 Torr) is maintained. The introduced polyvalent organic material and the inert gas are ionized by plasma in the processing chamber 30 to form a polymer having a stable carbon ring. It is preferable that the organic substance supplied at this time is a polyhydric alcohol, hexane, heptane.

And as the film-like polymer treated in this manner, a carrier tape, a spacer film, an antistatic sheet, a reflector, a diffuser plate, a low reflection film, an LCD protective film, a prism film, a semiconductor Trays, LCD module trays, and the like.

In a second manner, as shown in FIG. 3, the carbon ring polymer forming unit is composed of an inert gas source 33a and an organometallic compound source 33b, and the inert gas and the organometallic compound are introduced into the processing chamber 30. By supplying a stable carbon ring polymer.

Here, the organometallic compound source 33b is a chiller that cools the organometallic compound to −20 to 0 ° C., vaporizes the organometallic compound by vapor pressure, and supplies the organometallic compound into the treatment chamber 30. Prepared. The inert gas supply source 33a is provided at the front end of the chiller 33b to supply the inert gas to the chiller. Therefore, the organometallic compound vaporized by the chiller is supplied into the process chamber by the inert gas.

The organometallic compound and the inert gas supplied into the processing chamber 30 are injected into the processing chamber 30 through a special injector (not shown). The introduced polyvalent organic material and the inert gas are ionized by plasma in the processing chamber 30 to form a polymer having a stable carbon ring. The organometallic compounds supplied at this time include Cu (acac) ₂ , Tetra methyl tin, Cu (hfac) ₂ , Triethyl aluminum, silver nitrate, nickel (II) acetyl acetonate, indium oxide, iron (II) acetyl acetonate, lithium cobalt (III) oxide, magnesium oxide, methyl silane, poly anilinesulfonic acid, polypyrrole, 1,2,5-triethylpyrrole, triisobuthylsilane and ferrocene are possible.

Film-like polymers treated in this manner include carrier tapes, spacer films, antistatic sheets, automotive electromagnetic shielding films, antistatic films, LCD protective films, reflectors, diffusers, General use films, prism films, and the like are possible.

The structure and function of the other components are the same as those of the pretreatment chamber 30 described above, and thus will not be repeated here.

Next, the 2nd process chamber 40 is a component which performs predetermined | prescribed process with respect to the one surface which was not processed in the 1st process chamber 30 among the both surfaces of the film-form polymer (M). That is, one surface of both surfaces of a film polymer is processed in a 1st process chamber, and the other surface is processed in a 2nd process chamber. Therefore, both surfaces of the film-like polymer are treated during the first and second treatment chambers.

Since the structure and function of this second processing chamber 40 are the same as those of the first processing chamber 30, they will not be repeated here. However, as shown in FIG. 1, the second treatment chamber 40 is disposed in a direction opposite to the first treatment chamber 30 to treat the other surface of the film-like polymer.

Finally, the unloading chamber 50 is provided adjacent to the second processing chamber 40. The unloading chamber 50 is a component that receives the processed film-like polymer M from the second processing chamber 40 and takes it out to the outside. Therefore, this unloading chamber 50 is provided with the unloading roll 52 which can wind the film-form polymer by which surface treatment was completed in the center part. That is, this unloading roll 52 receives the film-form polymer which the process completed while rotating, from the 2nd process chamber 40. FIG. At this time, the unloading chamber 50 is provided with a plurality of guide rolls 70, as in the loading chamber 10, to control the moving path and the moving speed of the film-like polymer.

After the treatment of all the film-like polymers is completed and wound up on the unloading roll, a venting part capable of injecting a stable inert gas or the like into the unloading chamber 50 to increase the internal pressure (not shown in the drawing). O) is prepared. One side wall of the unloading chamber 50 is provided with an opening 54 so as to be connected to the outside, and the opening 54 is opened and closed by the gate 56.

Hereinafter, the method of processing a film-form polymer using the film-form polymer processing apparatus 1 which concerns on a present Example is demonstrated.

First, a step (S110) of introducing the film-like polymer (M) into the loading chamber 10 under atmospheric pressure is performed. This step is a step of introducing the film-like polymer (M) into the loading chamber 10 maintaining the atmospheric pressure as a start step of the film-like polymer processing method according to this embodiment. In this process, the film-like polymer (M) is delivered to the loading chamber (10) by an import means (not shown in the drawing) provided outside the processing apparatus, and when the film-like polymer is introduced into the loading chamber, the opening opened to the outside of the loading chamber. 14 is closed by the gate 16, and the inside of the loading chamber is isolated from the outside. The film-like polymer (M) introduced into the loading chamber is wound on the loading roll 12 and positioned.

Next, the step (S120) of carrying in the film polymer (M) to the pretreatment chamber 20 is in progress. In this step, since the film-like polymer (M) must be carried into the pretreatment chamber 20 which always maintains the vacuum state, the interior of the loading chamber 10 should be vacuumed. Therefore, by operating the vacuum pump (60a) installed in the loading chamber 10 to discharge the gas inside the loading chamber 10 to the outside to make the interior of the loading chamber into a vacuum state. Then, one end of the film-like polymer (M) is introduced into the pretreatment chamber 20 using the guide roll 70. When one end of the film-like polymer M is introduced into the pretreatment chamber 20, the remaining film-like polymer is sequentially moved to the pretreatment chamber.

Next, the preprocessing step S130 is performed. This step is a step of generating a plasma to perform a predetermined pretreatment on the film-like polymer (M). This step removes water (H ₂ O) and gases present in the film-like polymer. Here, the gas present in the film-like polymer is generated as potential energy in the subsequent treatment step performed in the treatment chamber and must be completely removed in this step. In this embodiment, it is preferable to treat the film so that the surface conductivity of the film-like polymer is maintained at 10 ⁶ to 10 ⁹ Ω / cm ² in this step, since the subsequent process time can be shortened.

Next, the step (S140) of carrying in the film-form polymer (M) to the 1st process chamber 30 advances. In this step, the film-form polymer M is carried into the first processing chamber 30 at a constant speed using a plurality of guide rolls 70 provided in the pretreatment chamber 20 and the first processing chamber 30. The film-form polymer carried into the 1st process chamber is wound around the main roll 38 provided in the 1st process chamber center part, and is moved.

Next, a step (S150) of treating the surface of the film-like polymer using plasma is performed in the first processing chamber 30. In this step, plasma is generated using a higher RF power than in the pretreatment step, and the film-like polymer is treated using a stronger plasma. This step is performed by supplying a multi-component process gas consisting of C ₂ H ₂ , CH ₄ , Ar ⁺ , N ₂ ⁺ , H ₂ , the surface conductivity of the film-like polymer 10 ^-6 ~ 10 ^-4 Ω / cm Process to remain at ² . Next, the film-form polymer (M) is carried into the 2nd process chamber 40, and the process of processing is advanced. In this step, the steps in the above-described first processing chamber 30 proceed in the same manner. However, predetermined | prescribed process is performed using a plasma with respect to the surface which is not processed in the 1st process chamber 30 among the both surfaces of the film-form polymer M. FIG.

Next, the step (S160) of discharging the film-like polymer (M) to the outside proceeds. In this step, the film-like polymer M is discharged into the unloading chamber 50 at a constant speed using a plurality of guide rolls 70 provided in the second processing chamber 40 and the unloading chamber 50. The discharged film-like polymer is wound around the unloading roll 52 provided in the unloading chamber 50. When all of the film-like polymer M is discharged into the unloading chamber 50, a venting process of increasing a pressure by injecting a specific gas into the unloading chamber 50 using a venting part is performed. When the pressure inside the unloading chamber 50 is equal to atmospheric pressure, the opening 52 connected to the unloading chamber and the outside is opened to discharge the film-like polymer to the outside. This completes the treatment for the film-like polymer.

Hereinafter, some results of treating the film-like polymer using the film-form polymer treating apparatus and the method according to the present embodiment are shown in a table.

RF Power (W) Multi-Component Gas Composition Ratio (sccm) Negative Voltage Pulse Power (KV) Frequency (Hz) Negative Voltage Pulse Width (μsec) Sheath formation distance (mm) Ion action distance (mm) Surface Conductivity (Ω / cm2) One 250 Ar ⁺ : H ₂ = 30: 10 21.5 550 20-23 80 270 10 ⁶ to 10 ⁹ 2 350 C ₂ H ₂ : H ₂ = 85: 15 25.5 600 20-25 150 330 10 ^-4 to 10 ⁰ 3 450 CH ₄ : H ₂ = 65: 35 27 500 20-27 140 350 10 ^-5 to 10 ² 4 150-270 N ₂ : Ar = 10: 50 28 500-600 20-25 140 330 10 ^-5 to 10 ² 5 350-450 C ₂ H ₂ : H ₂ : Ar = 60: 10: 30 25 450-550 20-23 150 300 10 ^-5 to 10 ² 6 500-550 CH ₄ : H ₂ : Ar = 75: 10: 15 27 500-570 20-25 140 350 10 ^-6 to 10 ^-2

According to the above Table 1 it can be seen that the film-like polymer can be effectively treated by the film-like polymer processing apparatus and treatment method according to the present embodiment, in particular, it has a very good treatment effect in surface conductivity.

According to the film-like polymer processing apparatus according to the present invention, the plasma sheath is generated to be compatible with the surface curvature of the film-like polymer, and an appropriate ion working distance is ensured so that all surfaces of the film-like polymer are treated uniformly.

In particular, since the ion is deeply injected into the surface of the film polymer, there is an advantage that a film polymer having excellent surface conductivity can be obtained.

Claims (22)

A processing chamber capable of forming a sealed space therein; A main roll disposed at the center of the treatment chamber and configured to move the film-like polymer around its outer periphery; A high frequency power supply comprising a high frequency power supply, a matching box, and an antenna, the high frequency power supply supplying high frequency power to generate a plasma in the processing chamber; A process gas supply unit configured to include a process gas supply source, a process gas supply path, and a flow rate adjusting means, and supply a process gas constituting a plasma generated in the process chamber; A pumping unit for reducing the inside of the process chamber to a vacuum state; Negative voltage generating device, consisting of a grid (grid), the grid unit for focusing ions; Including but not limited to The antenna and the grid is a film-like polymer processing apparatus, characterized in that provided spaced 250 ~ 400 mm. The method of claim 1, wherein the grid unit, It is provided with a plurality of grids, the film-like polymer processing apparatus, characterized in that the interval between each grid is 30 ~ 90 mm. The method of claim 1, wherein the process gas, _{C 2 H 2, CH 4,} Ar +, N 2 +, film-like polymer processing apparatus, characterized in that multi-component process gas composed of H _2. The method of claim 3, The composition ratio of the multi-component process gas is C ₂ H ₂ : H ₂ is 80:20, CH ₄ : H ₂ is 70:30, Ar ⁺ : H ₂ is a film-like polymer, characterized in that Processing unit. The method of claim 2, wherein the main roll, The film-like polymer processing apparatus, characterized in that the cold and hot water main roll that can adjust the temperature of the film-like medium to move around the outer peripheral portion. The method of claim 2, wherein the grid, A film-like polymer processing apparatus, characterized in that the semicircular grid is spaced apart from the outer peripheral portion of the main roll 10 ~ 100 mm. The method of claim 2, An inert gas source, an organic material source, and an injector, the film polymer processing apparatus further comprises a carbon ring polymer forming unit for supplying an inert gas and an organic material into the processing chamber to form a stable carbon ring polymer. The method of claim 7, wherein the organic material source, A film-like polymer processing apparatus comprising a bubbler and a vaporizer. The method of claim 8, wherein the organic material, A film-like polymer processing apparatus, characterized in that any one selected from the group consisting of polyhydric alcohol, hexane, heptane.  The method of claim 9, wherein the film-like polymer, Carrier tape, spacer film, antistatic sheet, reflector, diffuser plate, low reflection film, LCD protective film, prism film, semiconductor tray, LCD module tray Film-like polymer processing apparatus, characterized in that one. The method of claim 2, An inert gas source and an organometallic compound source, wherein the film-like polymer processing unit further comprises a carbon ring polymer forming unit for supplying an inert gas and an organometallic compound into the process chamber to form a stable carbon ring polymer . The method of claim 11, wherein the organometallic compound source, A chiller (chiller) for cooling an organometallic compound and vaporizing and supplying the organometallic compound by vapor pressure. The method of claim 12, wherein the organometallic compound, Cu (acac) ₂ , Tetra methyl tin, Cu (hfac) ₂ , Triethyl aluminum, silver nitrate, nickel (II) acetyl acetonate, indium oxide, iron (II) acetyl acetonate, lithium cobalt (III) oxide, magnesium oxide, methyl A film polymer processing apparatus, characterized in that any one selected from the group consisting of silane, poly anilinesulfonic acid, polypyrrole, 1,2,5-triethylpyrrole, triisobuthylsilane, ferrocene. The method of claim 13, wherein the film-like polymer, Carrier tape, spacer film, antistatic sheet, automotive electromagnetic shielding film, antistatic film, LCD protective film, reflector plate, diffuser plate, total use film, prism film It is any one selected, The film-form polymer processing apparatus characterized by the above-mentioned. The method of claim 2, wherein the processing chamber, A multi-processing chamber comprising a first processing chamber and a second processing chamber, wherein the first processing chamber processes one surface of the film-like polymer, and the second processing chamber processes the other surface of the film-form polymer. Phase polymer processing apparatus. The method of claim 2, A pretreatment chamber is further connected to the treatment chamber, In the pretreatment chamber,  A high frequency power supply comprising a high frequency power supply, a matching box, and an antenna, the high frequency power supply supplying high frequency power to generate plasma in the processing chamber;  A process gas supply unit, comprising a process gas supply source, a process gas supply passage, and a flow rate adjusting means, for supplying a process gas constituting a plasma generated in the process chamber;  A pumping portion for reducing the inside of the process chamber to a vacuum state;  -A negative voltage generator, consisting of a grid (grid), the grid portion for focusing ions; Wherein said antenna and grid are linear antennas and grids. The method of claim 16, A loading chamber that is connected to the pretreatment chamber and receives a film polymer from the outside and supplies the polymer to the pretreatment chamber; An unloading chamber connected to the processing chamber and receiving the film-form polymer processed in the processing chamber and carrying it out to the outside; Have more, And a loading roll and an unloading roll capable of winding the film-like polymer in the center of the loading chamber and the unloading chamber, respectively. 1) introducing a film-like polymer having a polymer formed on the surface thereof to an atmospheric pressure loading chamber, and making the loading chamber into a vacuum state; 2) lowering the pressure inside the loading chamber to make a vacuum, and bringing the film-like polymer into a pretreatment chamber maintained in a vacuum state; 3) removing water (H ₂ O) and gas present in the film polymer using plasma in the pretreatment chamber; 4) bringing the film-like polymer into a process chamber maintained in vacuum; 5) treating the surface of the film-like polymer using plasma in the treatment chamber; 6) discharging the film-like polymer into a vacuum unloading chamber, and discharging the film-like polymer to the outside in a state where the pressure of the unloading chamber is raised to atmospheric pressure; To Film-like polymer treatment method comprising. 19. The method of claim 18, wherein step 3) And a surface conductivity of the film polymer is maintained at 10 ⁶ to 10 ⁹ Ω / cm ² . 19. The method of claim 18, wherein in steps 3) and 5), _{C 2 H 2, CH 4,} Ar +, N 2 +, and phase is made of a H ₂ supplying a process gas component system consisting of the process gas, characterized in that the step of plasma processing the polymer film method. The method of claim 18, wherein step 5) The film-like polymer treatment method characterized in that the step of treating so that the surface conductivity of the film-like polymer is maintained at 10 ^-6 ~ 10 ^-4 Ω / cm ² . The method of claim 18, wherein step 5) A first treatment step of treating one side of the film-like polymer; and A second treatment step of treating the other surface of the film-like polymer; The film-form polymer processing method characterized by the above-mentioned.

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