KR20060075877A - Cover for n2 blow cleaning of copper chamber - Google Patents

Cover for n2 blow cleaning of copper chamber Download PDF

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Publication number
KR20060075877A
KR20060075877A KR1020040115246A KR20040115246A KR20060075877A KR 20060075877 A KR20060075877 A KR 20060075877A KR 1020040115246 A KR1020040115246 A KR 1020040115246A KR 20040115246 A KR20040115246 A KR 20040115246A KR 20060075877 A KR20060075877 A KR 20060075877A
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cover
cleaning
chamber
copper
copper chamber
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KR1020040115246A
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Korean (ko)
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이용준
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동부일렉트로닉스 주식회사
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Priority to KR1020040115246A priority Critical patent/KR20060075877A/en
Publication of KR20060075877A publication Critical patent/KR20060075877A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning In General (AREA)

Abstract

본 발명은 구리챔버 세정용 전용커버에 관한 것으로, PVD 설비중의 하나인 구리챔버를 세정하는 장치에 있어서, 상기 구리챔버의 개구된 상면을 밀폐하는 커버를 마련하되, 상기 커버에는 동일 설비들과 혼용될 수 있도록 규격화된 진공라인설치공과 질소라인설치공이 천공형성된 구리챔버의 질소 세정용 커버를 제공한다.The present invention relates to a cover exclusively for cleaning a copper chamber, the apparatus for cleaning a copper chamber which is one of the PVD equipment, comprising a cover for sealing the open upper surface of the copper chamber, the cover and the same equipment The vacuum line installation hole and the nitrogen line installation hole, which are standardized to be mixed, provide a nitrogen cleaning cover of the perforated copper chamber.

본 발명은 구리챔버 전용 세정 커버가 구비됨으로써 인접 설비의 구리 오염없이 질소 블로잉을 통한 마무리 세정이 가능하여 세정효율을 극대화시킬 수 있고, 그에 따라 고품위의 제품을 양산할 수 있으며, 생산성이 향상되는 효과를 제공한다.The present invention is equipped with a cleaning chamber dedicated to the copper chamber can be finished cleaning through nitrogen blowing without copper contamination of adjacent equipment to maximize the cleaning efficiency, thereby producing high-quality products, productivity is improved effect To provide.

구리챔버, PVD, 질소 블로잉, 커버Copper chamber, PVD, nitrogen blowing, cover

Description

구리챔버의 질소 세정용 커버{COVER FOR N2 BLOW CLEANING OF COPPER CHAMBER}Cover for nitrogen cleaning of copper chamber {COVER FOR N2 BLOW CLEANING OF COPPER CHAMBER}

도 1은 본 발명에 따른 커버의 설치상태를 개략적으로 보인 단면도,1 is a cross-sectional view schematically showing an installation state of a cover according to the present invention;

도 2는 본 발명에 따른 커버의 평면도.2 is a plan view of a cover according to the invention.

♧ 도면의 주요 부분에 대한 부호의 설명 ♧♧ description of the symbols for the main parts of the drawing ♧

10....구리챔버 12....안착대10 ... copper chamber 12.

20....커버 30....진공라인20. Cover 30. Vacuum line

32....진공라인설치공 40....질소라인32..Vacuum line installer 40..Nitrogen line

42....질소라인설치공42..Nitrogen Line Installer

본 발명은 구리챔버 세정용 전용커버에 관한 것으로, 보다 상세하게는 구리챔버를 질소가스로 세정할 때에 라인내 다른 장비의 구리 오염을 막고 세정효율도 향상시킬 수 있도록 한 구리챔버의 질소 세정용 커버에 관한 것이다.The present invention relates to a copper chamber cleaning cover, and more particularly, to clean the copper chamber with nitrogen gas to prevent copper contamination of other equipment in the line and to improve cleaning efficiency. It is about.

통상, PVD(PHYSICAL VAPOUR DEPOSITION)은 스퍼터링, 증착 등의 물리적인 박막증착 기술을 총칭하는 말이다. Generally, PVD (PHYSICAL VAPOUR DEPOSITION) is a general term for physical thin film deposition techniques such as sputtering and deposition.                         

이와 같은 박막증착을 위해 보통 구리챔버와 알루미늄챔버가 혼용으로 배설되기도 한다.For such thin film deposition, a common copper chamber and an aluminum chamber are often mixed.

공정을 완료한 챔버들은 챔버의 상면을 개방시킨 상태에서 진공호스를 이용함과 동시에 질소가스를 급속 분사시켜 내부를 세정하게 되며, 이후 IPA(ISO PROPYL ALCOHOL)증기의 휘발성을 이용하여 재차 세정 및 건조를 수행한 후 최종적으로 질소 블로잉을 통해 세정과정을 마무리하게 된다.After the process is completed, the chambers are cleaned with the vacuum hose at the same time as the upper surface of the chamber is opened, and nitrogen gas is rapidly injected to clean the inside. Finally, the cleaning process is completed by nitrogen blowing.

그런데, 구리챔버의 경우에는 라인내 다른 중요한 설비들이 설치되어 있으므로 그 상면을 개방한 채 질소 블로잉을 통한 고압분사 세정을 실시하게 되면 타 설비들이 구리에 의해 오염되는 문제가 유발된다.However, in the case of the copper chamber, since other important facilities are installed in the line, when the high pressure spray cleaning through nitrogen blowing is performed while the upper surface is opened, other facilities are contaminated by copper.

따라서, 부득이하게 구리챔버의 경우에는 최종 세정과정인 질소 블로잉 과정을 생략하고 있는 실정이다.Therefore, in the case of the copper chamber inevitably omitted the nitrogen blowing process that is the final cleaning process.

결국, 구리챔버는 그 세정효과가 우수하지 못하여 파티클 이슈 혹은 PM(PROCESS MAINTENANCE)을 유발시키는 문제를 안고 있다.As a result, the copper chamber has a problem that causes the particle issue or PM (PROCESS MAINTENANCE) due to its poor cleaning effect.

본 발명은 상술한 바와 같은 종래 기술이 갖는 제반 문제점을 감안하여 이를 해결하고자 창출한 것으로, 구리챔버내 파티클 등의 이물을 신속하고 용이하면서 완벽하게 세정해 낼 수 있도록 질소 블로잉 작업이 가능한 전용 커버를 구비하여 그 세정효율을 극대화시킬 수 있도록 한 구리챔버의 질소 세정용 커버를 제공함에 그 목적이 있다.The present invention has been made in view of the above-described problems of the prior art, and has been created to solve this problem, and has a special cover capable of nitrogen blowing to quickly and easily clean up foreign substances such as particles in a copper chamber. The purpose of the present invention is to provide a nitrogen chamber cover for cleaning the copper chamber to maximize its cleaning efficiency.

본 발명은 상기한 기술적 과제를 달성하기 위하여, PVD 설비중의 하나인 구리챔버를 세정하는 장치에 있어서, 상기 구리챔버의 개구된 상면을 밀폐하는 커버를 마련하되, 상기 커버에는 동일 설비들과 혼용될 수 있도록 규격화된 진공라인설치공과 질소라인설치공이 천공형성된 구리챔버의 질소 세정용 커버를 제공함에 그 특징이 있다.The present invention, in order to achieve the above technical problem, in the apparatus for cleaning the copper chamber of one of the PVD equipment, provided with a cover for sealing the opened upper surface of the copper chamber, the cover is mixed with the same equipment The vacuum line installation hole and the nitrogen line installation hole that are standardized to be provided are characterized by providing a nitrogen cleaning cover of the perforated copper chamber.

이하에서는, 첨부도면을 참고하여 본 발명에 따른 바람직한 일 실시예를 보다 상세하게 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment according to the present invention.

도 1은 본 발명에 따른 커버의 설치상태를 개략적으로 보인 단면도이고, 도 2는 본 발명에 따른 커버의 평면도이다.1 is a cross-sectional view schematically showing an installation state of a cover according to the present invention, Figure 2 is a plan view of a cover according to the present invention.

도 1 및 도 2에 도시된 바와 같이, 본 발명은 구리챔버(10)의 개구된 상면을 밀폐시킬 수 있는 크기를 갖고 원판형상으로 형성된 커버(20)를 구비하여서 된 것이다.As shown in Figs. 1 and 2, the present invention is provided with a cover 20 formed in a disc shape having a size capable of sealing the opened upper surface of the copper chamber 10.

상기 구리챔버(10) 내부에는 반도체 디바이스를 제조하기 위한 웨이퍼(WAFER)가 안착되는 안착대(12)가 마련되는데, 1회 공정처리를 통해 다수의 웨이퍼를 처리하기 위해 보트(BOAT)라 불리우는 웨이퍼 이송용 카트리지가 마련되고, 상기 보트가 상기 안착대(12)에 거치되어 견고히 고정됨으로써 다량처리가 가능하게 된다.The copper chamber 10 is provided with a seating table 12 on which a wafer WAFER for manufacturing a semiconductor device is mounted. A wafer called BOAT for processing a plurality of wafers through a single process. A transfer cartridge is provided, and the boat is mounted on the seating plate 12 to be firmly fixed, thereby allowing a large amount of processing.

이때, 상기 안착대(12)를 보트가이드 혹은 보트홀더라고 칭하기도 한다.In this case, the seat 12 may also be referred to as a boat guide or a boat holder.

그리고, 상기 커버(20)는 일정 두께를 갖는 원판형상의 부재로서, 주로 투명 아크릴이나 플라스틱으로 제조됨이 바람직하다. In addition, the cover 20 is a disc-shaped member having a predetermined thickness, and is preferably made of transparent acrylic or plastic.                     

이는, 내부에서 이루어지는 질소 블로잉에 의한 세정과정을 작업자가 용이하게 목측할 수 있도록 하기 위함이다.This is to allow the operator to easily observe the cleaning process by nitrogen blowing made therein.

또한, 상기 커버(20)는 구리챔버(10)의 개구된 상면을 충분히 밀폐할 수 있도록 그보다 큰 직경을 갖고 제조됨이 바람직하다.In addition, the cover 20 is preferably manufactured to have a larger diameter so as to sufficiently close the opened upper surface of the copper chamber 10.

아울러, 상기 커버(20)의 적소에는 진공라인(30)이 삽입설치되는 진공라인설치공(32)이 천공형성되고, 그와 간격을 두고 질소라인(40)이 삽입설치되는 질소라인설치공(42)이 천공형성된다.In addition, in place of the cover 20, the vacuum line installation hole 32 into which the vacuum line 30 is installed is drilled, and the nitrogen line installation hole into which the nitrogen line 40 is inserted at intervals therebetween ( 42) is perforated.

상기 진공라인설치공(32)는 상술한 PVD 공정에서 사용되는 타설비들의 세정시에도 혼용될 수 있도록 규격화되어야 하는 바, 이를 위해 규격화된 직경(a)인 10㎝를 유지하여 준다.The vacuum line installation hole 32 is to be standardized so that it can be mixed even when cleaning the other equipment used in the above-described PVD process, to maintain a standardized diameter (a) of 10cm.

뿐만 아니라, 상기 질소라인설치공(42)의 경우에도 규격화된 직경(b)인 2㎝를 유지하여 준다.In addition, in the case of the nitrogen line installation hole 42, it maintains the standardized diameter (b) 2cm.

이러한 구성으로 이루어진 본 발명의 작동관계는 다음과 같다.The operating relationship of the present invention made of such a configuration is as follows.

구리챔버(10)의 세정이 요구되면 작업자는 정해진 일련의 과정을 거쳐 마무리 세정 전단계까지의 세정작업, 예컨대 진공배기 및 IPA증기 투입 등에 의한 세정을 수행하게 된다.When cleaning of the copper chamber 10 is required, the operator performs cleaning by the predetermined series of steps up to the final cleaning step, for example, vacuum exhaust and IPA steam injection.

이와 같이, 정해진 일련이 세정작업이 완료되면 작업자는 미리 제작되어 마련된 커버(20)를 상기 구리챔버(10)의 개구된 상면에 배치시켜 이를 밀폐하도록 한다.As such, when a predetermined series of cleaning operations are completed, the worker arranges the cover 20 prepared in advance on the opened upper surface of the copper chamber 10 to seal it.

그런 다음, 진공라인(30)을 커버(20) 상의 진공라인설치공(32)에 정확히 설 치하고, 동시에 질소라인(40)을 커버(20) 상의 질소라인설치공(42)에 설치한다.Then, the vacuum line 30 is correctly installed in the vacuum line installation hole 32 on the cover 20, and at the same time, the nitrogen line 40 is installed in the nitrogen line installation hole 42 on the cover 20.

설치가 완료되면, 질소라인(40)을 통해 고압의 질소를 공급 분사시킴과 동시에 진공라인(30)을 통해 구리챔버(10) 내부의 공기를 흡입함으로써 최종 마무리 세정을 종료하게 된다.When the installation is completed, the final finish cleaning is completed by supplying and spraying high pressure nitrogen through the nitrogen line 40 and simultaneously sucking air in the copper chamber 10 through the vacuum line 30.

따라서, 구리챔버(10) 세정시 일부 구리성분은 커버(20)에 의해 밀폐되므로 방출되지 못하고 그 내부에 잔존하게 되므로 타설비를 오염시키지 않게 되고, 세정효율도 높아지게 된다.Therefore, when cleaning the copper chamber 10, some of the copper components are sealed by the cover 20, so that they are not discharged and remain in the inside thereof, so that they do not contaminate other equipment and the cleaning efficiency is also increased.

이상에서 상세히 설명한 바와 같이, 본 발명은 구리챔버 전용 세정 커버가 구비됨으로써 인접 설비의 구리 오염없이 질소 블로잉을 통한 마무리 세정이 가능하여 세정효율을 극대화시킬 수 있고, 그에 따라 고품위의 제품을 양산할 수 있으며, 생산성이 향상되는 효과를 제공한다.As described in detail above, the present invention is provided with a cleaning chamber dedicated to the copper chamber can be finished cleaning through nitrogen blowing without copper contamination of the adjacent equipment to maximize the cleaning efficiency, thereby mass-producing high-quality products And improves productivity.

Claims (2)

PVD 설비중의 하나인 구리챔버를 세정하는 장치에 있어서,An apparatus for cleaning a copper chamber which is one of PVD facilities, 상기 구리챔버의 개구된 상면을 밀폐하는 커버를 마련하되,Provide a cover for sealing the opened upper surface of the copper chamber, 상기 커버에는 동일 설비들과 혼용될 수 있도록 규격화된 진공라인설치공과 질소라인설치공이 천공형성된 것을 특징으로 하는 구리챔버의 질소 세정용 커버.The cover for nitrogen cleaning of the copper chamber, characterized in that the cover is perforated formed vacuum line installation hole and nitrogen line installation hole standardized to be mixed with the same facilities. 청구항 1에 있어서,The method according to claim 1, 상기 커버는 투명 아크릴 또는 플라스틱 소재로 형성된 것을 특징으로 하는 구리챔버의 질소 세정용 커버.The cover is nitrogen cleaning cover of the copper chamber, characterized in that formed of a transparent acrylic or plastic material.
KR1020040115246A 2004-12-29 2004-12-29 Cover for n2 blow cleaning of copper chamber KR20060075877A (en)

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