KR20060062200A - Process of blank mask for liquid crystal display - Google Patents

Abstract

By forming a semi-transmissive film having a low transmittance and a low phase difference at a specific wavelength, it is possible to control the diffraction light passing through the slit and to control the uniformity of the residual amount of the resist, thereby improving productivity and increasing process margin by simplifying the manufacturing process. Forming a transparent substrate, forming a transflective film on the transparent substrate, forming a light shielding film on the transflective film, forming an antireflection film on the light shielding film, and applying a resist on the antireflection film. A blank mask manufacturing method for a liquid crystal display device is provided.

LCD, blank mask, photo mask, transmittance, retardation, transflective film, exposure, development, slit, uniformity

Description

Process for manufacturing blank mask for liquid crystal display {Process of Blank Mask for Liquid Crystal Display}

1 is a cross-sectional process diagram schematically showing an embodiment of a blank mask manufacturing method for a liquid crystal display according to the present invention.

2 is a cross-sectional process diagram schematically showing an embodiment of a photomask manufacturing method according to the present invention.

3 is a cross-sectional process diagram illustrating a process of manufacturing a liquid crystal display using a photomask according to the present invention.

4 is a cross-sectional process diagram illustrating a process of manufacturing a liquid crystal display using a photomask using a slit mask technique.

The present invention relates to a method for manufacturing a blank mask for a liquid crystal display device, and more particularly, to manufacturing a blank mask for a liquid crystal display device which can improve the quality completeness and yield since the uniformity of the remaining amount of resist is greatly improved by forming a semi-transmissive film. It is about a method.

In the early LCD manufacturing process, eight photomasks were used, and thus, the number of lithography processes was long, and the process time was long, resulting in high process cost and long lead time for manufacturing the final product. . Accordingly, improvements have been made in the direction of reducing the number of lithography processes and reducing the process time, and in the 2000s, the photolithography process has been developed to complete the exposure process with four or less photomasks.

In particular, in the 4-mask process using slit mask technology, a metal film is formed on a substrate, and then the gate line is formed through an exposure process, a developing process, and an etching process using a first mask. Patterning, an insulator film, an a-Si film, an n + a-Si film, and a metal film are sequentially formed on the gate line, and then an exposure process and a developing process are performed using a slit mask as a second mask. In the second mask, a portion without a pattern is completely exposed to expose the surface of the metal layer, but a portion in which a slit is formed becomes incomplete exposure due to diffraction of exposure light, so that the remaining film of the resist remains in the developing process. In this state, an etching process is performed to form an amorphous silicon island pattern, and an ashing process is performed to expose the surface of the metal film to the remaining portion of the resist, and then a source and drain pattern is formed by etching again. do. In this case, the second mask corresponds to the process of requiring two photomasks to one photomask. Thereafter, the remaining resist is removed to form silicon nitride (SiN) serving as a passivation film, and then a contact hole pattern for connecting the metal films to each other is formed using a third mask. After forming an ITO film on the contact hole pattern, an ITO pattern is formed using a fourth mask.

In the 4-mask process, the amorphous silicon island pattern, the source, and the drain pattern may be manufactured in a single exposure process, but when the pattern becomes fine or the structure becomes complicated, the control and resist of diffracted light passing through the slit The problem of difficulty in controlling the uniformity of the residual amount can result in cost loss in terms of production and yield.

On the other hand, in the case of using the existing phase inversion blank mask, the phase difference of the exposure light passing through the phase inversion film is set to 180 °, and the film is formed to have a specific transmittance at the exposure wavelength to prevent the interference phenomenon of the exposure light passing through the phase inversion film and the substrate. To form a fine pattern. When the phase inversion blank mask is manufactured as a photomask and applied to a liquid crystal display (LCD) process, fine patterns can be formed as compared to the chromium photomask, but a high transmittance and a high transmittance at an exposure wavelength for a liquid crystal display (LCD) Problems in which it is difficult to control the resist residual amount and uniformity occur due to the characteristics showing the phase difference.

The present invention is to solve the above problems by using a semi-permeable membrane that is easy to adjust the transmittance and phase difference.

An object of the present invention is to solve the above problems, as in the case of the second mask of the four-mask process using the slit mask technology to form a complete exposure region and an incomplete exposure region twice by one exposure process only The same effect as the exposure process can be obtained, and by forming a semi-transmissive film having a low transmittance and a low phase difference at a specific wavelength, a fine slit pattern, which is difficult to control in a photomask to which the slit mask technology is applied, can be obtained. When formed, since it is possible to control the control of diffracted light passing through the slit and the uniformity of the remaining amount of resist, a blank mask manufacturing method for a liquid crystal display device which can increase productivity and process margin by simplifying the manufacturing process. It is to provide.

In order to achieve the above object, the present invention provides a blank mask manufacturing method for a liquid crystal display device comprising the steps of: a1) forming a transparent substrate; b1) forming a transflective film on the transparent substrate formed in step a1); c1) forming a light shielding film on the transflective film formed in step b1); d1) forming an anti-reflection film on the light shielding film formed in step c1); e1) forming a resist on the antireflection film formed in step d1).

The transparent substrate formed in step a1) is made of glass or quartz, and refers to a 5-12 inch flat panel display substrate having a transmittance of 90% or more.

The flat panel display includes a liquid crystal display (LCD), a plasma panel display (PDP), an electroluminescent display (FED), and the like.

The semi-permeable membrane formed in step b1) is formed by a sputtering method in a vacuum chamber in which inert and active gases are introduced using a metal as a matrix.

The metal matrix used to form the semi-transmissive film is cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium ( Made of Ti, niobium (Nb), zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), silicon (Si), etc. At least one or more selected from the group are used alone or in combination.

At least one selected from the group consisting of argon (Ar), helium (He), neon (Ne), xenon (Xe), and the like is used as the inert gas used when the semi-permeable membrane is formed, and oxygen is used as the active gas. (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₃ ), methane ( CH ₄ ) and at least one selected from the group consisting of.

The semi-transmissive film is made of molybdenum silicide (MoSiN), molybdenum sulphide (MoSiO), molybdenum sulphide (MoSiC), molybdenum sulphide (MoSiCO), or molybdenum sulphide (MoSiCN), molybdenum oxynitride (MoSiON), molybdenum oxynitride silicide (MoSiCON), or the like.

The component content of the semi-permeable membrane comprising the membrane of the above components is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), 0 to 60 at% of nitrogen (N), and 20 to 60 at% of silicon (Si). Selectively set and applied, the remainder is made of molybdenum (Mo).

In addition, when the metal matrix of the semi-permeable membrane is an aluminum (Al) combination, aluminum nitride (AlN), aluminum oxide (AlO), aluminum carbide (AlC), aluminum carbide oxide (AlCO), aluminum carbide nitride (AlCN), oxynitride It is formed of a film of a component containing at least one of aluminum (AlON), aluminum carbide oxynitride (AlCON) and the like.

The component content of the semi-permeable membrane consisting of the membrane of the above components is selectively set and applied from 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), and 0 to 60 at% of nitrogen (N), and the rest is applied. It is made of aluminum (Al).

The semi-permeable membrane may be composed of two or more layers of a continuous membrane or a low-permeable membrane and a high-permeable membrane which are manufactured so that the constituents change from the transparent substrate to the upper layer.

The argon (Ar): nitrogen (N ₂ ): carbon dioxide (CO ₂ ): methane (CH ₄ ), which is a mixing ratio of the reactive gas under the conditions of the vacuum chamber 1 to 5 mTorr and the applied power of 0.5 to 2 kW, in the above. 80 sccm: 20 to 95 sccm: 0 to 30 sccm: 0 to 30 sccm.

The mixing ratio of the inert gas and the active gas introduced into the vacuum chamber is set so as to keep the inert gas: active gas in the range of 1 to 95%: 0.1 to 100%.

The semi-transmissive film refers to a film having a transmittance of 5 to 60% at a wavelength of 300 to 800 nm, a phase shift of 0 to 90 °, and a thickness of 50 to 4500 Hz.

The semi-transmissive film is formed such that the phase difference φ satisfies φ ≤ ± (1/2 + 2n) π (where n is 0, 1, 2, 3 .....).

The light shielding film formed in step c1) is formed using a vacuum deposition method in a vacuum chamber in which an inert gas and a reactive gas are introduced using a metal as a matrix.

Examples of the metal matrix used in forming the light shielding film include cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), and titanium (Ti). ), Niobium (Nb), zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), silicon (Si), etc. At least one or more is selected from and used alone or as a compound.

At least one selected from argon (Ar), helium (He), neon (Ne), xeon (Xe), and the like is used as an inert gas for forming the light shielding film, and oxygen (O ₂ ), At least in nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₄ ), methane (CH ₄ ), and the like. Select and use one or more.

When the metal matrix is chromium (Cr), chromium oxide (CrO), chromium nitride (CrN), chromium carbide (CrC), chromium carbide (CrCO), chromium nitride (CrCN), and chromium nitride (CrON) , Chromium carbide oxynitride (CrCON) or the like.

The component content of the light shielding film which consists of a film of such a component is 0-20 at% of carbon (C), 0-60 at% of oxygen (O), and 0-60 at% of nitrogen (N), and the remainder is chromium (Cr).

The light shielding film may be formed of aluminum oxide (AlO), aluminum nitride (AlN), aluminum carbide (AlC), aluminum nitride (AlCN), aluminum carbide (AlCO), or aluminum oxynitride when the metal matrix is aluminum (Al). (AlON), aluminum carbide oxynitride (AlCON), or the like, and is formed of a film containing at least one or more components.

The component content of the light shielding film which consists of a film of such a component is 0-20 at% of carbon (C), 0-60 at% of oxygen (O), and 0-60 at% of nitrogen (N), and the remainder consists of aluminum (Al).

The anti-reflection film formed in step d1) is formed using a vacuum deposition method in a vacuum chamber in which an inert gas and a reactive gas are introduced using a metal as a matrix.

The metal matrix used for forming the anti-reflection film is cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium ( Made of Ti, niobium (Nb), zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), silicon (Si), etc. At least one or more selected from the group are used alone or in combination.

At least one selected from argon (Ar), helium (He), neon (Ne), xeon (Xe), and the like is used as the inert gas used to form the anti-reflection film, and oxygen (O ₂ ) is used as the reactive gas. , Nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₄ ), methane (CH ₄ ), etc. At least 1 type is selected and used.

The anti-reflection film is chromium oxide (CrO), chromium nitride (CrN), chromium carbide (CrC), chromium carbide (CrCO), chromium nitride (CrCN), chromium nitride (CrON) when the metal matrix is chromium (Cr). ), And chromium carbide oxynitride (CrCON) or the like.

The component content of the antireflection film composed of the film of the above components is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), and 0 to 60 at% of nitrogen (N), and the rest is made of chromium (Cr). .

The anti-reflection film may be formed of aluminum oxide (AlO), aluminum nitride (AlN), aluminum carbide (AlC), aluminum nitride (AlCN), aluminum carbide (AlCO) or aluminum oxynitride when the metal matrix is aluminum (Al). (AlON), aluminum carbide oxynitride (AlCON), or the like, and is formed of a film containing at least one or more components.

The component content of the antireflection film composed of the film of the above components is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), and 0 to 60 at% of nitrogen (N), and the rest is made of aluminum (Al). .

The light shielding film and the antireflection film may be formed by stacking two or more layers of a continuous film or a low permeable film and a high permeable film which are manufactured so that the constituents change from the transparent substrate to the upper film. That is, the light shielding film and the antireflection film of steps c1) and d1) may be formed of a continuous film or two or more layers having no film classification in which nitrogen content increases toward the transparent substrate.

In the steps c1) and d1), argon (Ar): nitrogen (N ₂ ): carbon dioxide (CO ₂ ): methane ( CH ₄ ) is preferably set from ₅ to 80 sccm: 20 to 95 sccm: 0 to 30 sccm: 0 to 30 sccm.

The mixing ratio of the inert gas and the reactive gas introduced into the vacuum chamber in steps c1) and d1) is set so that the inert gas: reactive gas is in the range of 1 to 95%: 0.1 to 100%.

In addition, in the steps b1), c1) and d1), it is possible to heat the substrate to a predetermined temperature (about 80 to 300 ° C) as a method for improving adhesion and growth of the film.

In addition, in consideration of stress relaxation and etching characteristics during vacuum deposition, annealing may be heated to a predetermined temperature (about 200 to 400 ° C).

The resist applied on the anti-reflection film in step e1) includes optical photoresist THMR-iP3500, THMR-iP3600, DPR-i7000 and E-Beam resist EBR-9, PBS, ZEP-7000 At least one selected from alkali-soluble resins such as positive chemically amplified resist FEP-171, negative chemically amplified resist FEN-270 and NEB-22, and resists composed of PAG (Photo Acid Generator). do.

The resist to be coated on the antireflection film is formed by spin coating or capillary coating, and the resist film is preferably maintained at a thickness of about 1,000 to 6,000 kPa.

After applying the resist as described above, it is preferable to perform a soft bake (Soft Bake) in the temperature range of about 50 ~ 250 ℃ using a hot plate (Hot Plate).

The photomask manufacturing method of the present invention consists of patterning a film selected from all or at least one of a semi-transmissive film, a light shielding film, and an antireflection film formed on the blank mask manufactured by the above-described manufacturing method.

The photomask manufacturing method of the present invention comprises the steps of: a2) exposing a blank mask manufactured by the manufacturing process of steps a1) to e1) with an electron beam or a laser of monochromatic light; b2) forming a resist pattern on the portion exposed in step a2) using a developer; c2) etching the transflective film, the light shielding film, and the anti-reflective film through a wet or dry etching process using the resist pattern formed in the step b2) as a masking; d2) removing the resist film used for pattern formation in step c2); e2) forming a resist film on the photomask in which the primary pattern is formed in step d2); f2) exposing the mask through step e2) with an electron beam or a laser of monochromatic light; g2) forming a resist pattern on the portion exposed in step f2) using a developer; h2) etching the light shielding film and the anti-reflection film through a wet or dry etching process by using the resist pattern formed in step g2) as a masking; i2) removing and cleaning the resist film used for pattern formation in step h2).

In addition, a method of manufacturing a semiconductor integrated circuit and / or a flat panel display using the blank mask and the photomask manufactured by the blank mask manufacturing method and the photomask manufacturing method for a liquid crystal display device of the present invention is a3) to a2) to exposing the photomask manufactured through the manufacturing process of step i2) with equipment such as a stepper; b3) forming a resist pattern using a developing solution on a part of the fully exposed and incompletely exposed part in the step a3); c3) etching the metal film, the n + a-Si film, and the a-Si film by a wet or dry etching process by using the resist pattern formed in step b3) as a masking; d3) The resist of the portion that was incompletely exposed in the step b3) is exposed to the source by removing the remaining resist film through an ashing process while the surface of the metal film is exposed through the step c3) and using the resist pattern as masking. Etching through a wet or dry etching process up to an n + a-Si film to form a drain pattern; e3) removing and cleaning the resist film used for pattern formation in step d3).

The photomask manufactured through the manufacturing process of steps a2) to i2) is not only a liquid crystal display device but also a semiconductor integrated circuit, a flat panel display (LCD, PDP, FED, etc.) through the manufacturing process of steps a3) to e3). ) Can also be applied to manufacture.

Hereinafter, the present invention will be described in detail with reference to examples, but the examples are used only for the purpose of illustration and explanation of the present invention, and are used to limit the scope of the present invention as defined in the meaning or claims. no. Therefore, those skilled in the art will understand that various modifications and equivalent other embodiments are possible from the embodiments. Therefore, the true technical protection scope of the present invention will be defined by the technical details of the claims.

Example 1

1 is a schematic cross-sectional view showing an embodiment of a blank mask manufacturing method for a liquid crystal display according to the present invention.

First, reactive sputtering using argon (Ar), nitrogen (N ₂ ), and carbon dioxide (CO ₂ ) gas is performed on molybdenum silicide (MoSi) as a target on a 6-inch transparent substrate 2 made of quartz. Thus, molybdenum oxynitride silicide (MoSiCON), which is the transflective film 4, is formed (P10).

The composition of the molten oxynitride nitride (MoSiCON) film, which is the transflective film 4, is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), 0 to 60 at% of nitrogen (N), and silicon (Si). ) 20 to 60 at%, and the remainder is made of molybdenum (Mo).

The semi-permeable membrane 4 is an argon (Ar): nitrogen (N ₂ ): carbon dioxide (CO ₂ ): methane (CH ₄ ), which is a mixing ratio of a reactive gas under conditions in which the vacuum degree of the vacuum chamber is 2 mTorr and the applied power is 1 kW. ) 5 to 80 sccm: 20 to 95 sccm: 0 to 30 sccm: 0 to 30 sccm.

The transflective film 4 is formed into a film having a transmittance of 20 to 30% at a wavelength of 400 to 600 nm, a phase difference of 0 to 50 °, and a thickness of 300 to 400 mW.

In addition, chromium nitride (CrN), which is a light shielding film (6), is formed to have a thickness of 660 kPa by a vacuum deposition method using argon (Ar) and nitrogen (N ₂ ) with chromium (Cr) as a target on the transflective film 4. (P12).

The composition of the chromium nitride (CrN) film as the light shielding film 6 is 0 to 60 at% of nitrogen (N), and the rest is made of chromium (Cr).

The chromium oxynitride carbide chromium nitride (CNT), which is an antireflection film 8, was subjected to a vacuum deposition method using argon (Ar), nitrogen (N ₂ ), and carbon dioxide (CO ₂ ) gas on the light shielding film 6 as a target of chromium (Cr). CrCON) is formed to a thickness of 110 kPa (P14).

The composition of the anti-reflection film 8, the chromium oxynitride carbide (CrCON) film is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), and 0 to 60 at% of nitrogen (N), and the rest is chromium (Cr). )

After the ZEP-7000 is formed on the anti-reflection film 8 by using a spin coating method, a resist film 10 having a thickness of 3000 Å is formed and then soft baked on a hot plate (P16).

The temperature at which soft bake is performed above is 200 ° C., and the time is set to 15 minutes.

Through the above process to manufacture a blank mask for a liquid crystal display device according to the present invention.

Next, an embodiment of a photomask manufacturing method according to the present invention using a blank mask manufactured by the above process will be described with reference to FIG. 2.

First, an electron beam having an acceleration voltage of 10 kV is selectively applied to the resist film 10 of the blank mask manufactured as described above, and exposed in a predetermined pattern with an energy of 10 μC / cm 2 (P20).

A resist pattern is formed by developing GED-500, which is a developer, for 70 seconds in a spray method on the exposed portion as described above (P21).

The antireflection film 8 pattern and the light shielding film 6 were subjected to dry etching for 500 seconds using helium (He), oxygen (O ₂ ), and chlorine (Cl and Cl ₂ ) gases using the resist pattern formed as described above. ) A pattern is formed (P22).

The semi-transmissive layer 4 pattern is formed by dry etching for 30 seconds using helium (He), oxygen (O ₂ ), and carbon fluoride (CF ₄ ) gas using a resist pattern as a masking (P23). ).

Subsequently, sulfuric acid is subjected to dipping for 30 minutes at 90 ° C. to remove the unnecessary resist film 10, and then a cleaning process is performed to remove foreign substances (P24).

After the IP-3500 is formed on the antireflection film 8 pattern by spin coating, a secondary resist film 12 having a thickness of 4650 Å is formed, and then soft bake is performed on a hot plate (P25).

In the above, soft baking is performed at 110 degreeC for about 15 minutes.

Next, the secondary resist film 12 is selectively exposed in a predetermined pattern with an energy of 95 mJ (P26).

In order to form the resist pattern of the exposed portion as described above, the developing solution NMD-W is developed by spraying for 70 seconds to form a pattern (P27).

Using the resist pattern formed as described above as a masking, an antireflection film 8 pattern and a light shielding film 6 pattern are formed through wet etching for 60 seconds using CR-7 (P28).

After removing the resist film 12, which is unnecessary by performing dipping on sulfuric acid at 90 ° C. for 30 minutes, the contaminants and particles, etc. adhered to the surface are completely removed through the SPM and SC-1 processes. (P29).

Through the process as described above to produce a photomask according to the present invention.

Example 2

First, as shown in FIG. 1, argon (Ar), nitrogen (N ₂ ), carbon dioxide (CO ₂ ), and methane (A) as targets of aluminum (Al) on a 6-inch transparent substrate 2 made of quartz. A vacuum vapor deposition method using CH ₄ ) gas is performed to form a semipermeable membrane 4, aluminum carbide oxynitride (AlCON).

The composition of the aluminum carbide oxynitride (AlCON) film, which is the semi-transmissive film 4, is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), and 0 to 60 at% of nitrogen (N), and the rest is aluminum. It consists of (Al).

The semi-permeable membrane 4 has a mixing ratio of argon (Ar): nitrogen (N ₂ ): carbon dioxide (CO ₂ ): methane (CH ₄ ) under a condition of 2 mTorr of vacuum chamber and 0.6 kW of applied power. 5 to 80 sccm: 20 to 95 sccm: 0 to 30 sccm: 0 to 30 sccm.

The transflective film 4 is formed into a film having a transmittance of 20 to 30% at a wavelength of 400 to 600 nm, a phase difference of 40 to 50 °, and a thickness of 300 to 400 Hz.

Chromium nitride (CrN), which is a light shielding film (6), is formed to have a thickness of 500 kPa by a vacuum deposition method using argon (Ar) and nitrogen (N ₂ ) gas with chromium (Cr) as a target on the transflective film 4. (P12).

The composition of the chromium nitride (CrN) film as the light shielding film 6 is 0 to 60 at% of nitrogen (N), and the rest is made of chromium (Cr).

The anti-reflection film 8 may be subjected to a vacuum deposition method using argon (Ar), nitrogen (N ₂ ), carbon dioxide (CO ₂ ), and methane (CH ₄ ) gas, targeting chromium (Cr) on the light shielding film 6. Chromium oxynitride (CrCON) is formed to a thickness of 110 kPa (P14).

The composition of the chromium oxynitride (CrCON) film as the antireflection film 8 is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), and 0 to 60 at% of nitrogen (N), and the rest is chromium ( Cr).

In addition, after forming the resist film 10 having a thickness of 3000 Å on the anti-reflection film 8 by using a spin coating method, a soft bake is performed on a hot plate (P16).

The temperature at which soft baking is performed above is 200 ° C., and the time is about 15 minutes.

It is also possible to manufacture a blank mask for a liquid crystal display device according to the present invention through the above process.

Next, a process of manufacturing a semiconductor integrated circuit, a flat panel display, etc. using the blank mask and the photomask for the liquid crystal display according to the present invention manufactured as described above will be described with reference to FIG. 3.

First, as shown in FIG. 3, the photomask 20 manufactured through the manufacturing process is exposed with equipment such as a stepper (P30), and for the fully exposed and incompletely exposed portions in the step (P30). The resist pattern 42 is formed using a developer (P31), and the metal film 40, the n + a-Si film 38, and a- are formed by using the resist pattern 42 formed in the step (P31) as masking. The Si film 36 is etched by a wet or dry etching process (P33).

Then, the resist of the portion that was incompletely exposed in the step (P32) is removed through the ashing process while the surface of the metal film 40 is exposed through the step (P33) to remove the remaining resist film and mask the resist pattern. In order to form a source and a drain pattern using the same as the etching process, the n + a-Si film 38 is etched through a wet or dry etching process (P34), and the resist film 42 used for pattern formation in the step (P34) is used. Remove and clean (P35).

In Fig. 3, reference numeral 30 denotes a substrate, reference numeral 34 denotes an insulator film, and reference numeral 32 denotes a metal film.

In the same manner as above, a flat panel display such as a liquid crystal display, a semiconductor circuit, and the like are manufactured.

4 shows an example in which the slit mask technique is applied in the same process as described above. In this case, when the slit mask technique is applied, the photoresist pattern profile is inclined at right angles due to the influence of diffracted light at the outermost part of the pattern in the exposure process. There is a problem that it is difficult to control the pattern due to the larger.

In Fig. 4, reference numeral 19 denotes a slit.

In the above, a preferred embodiment of a blank mask manufacturing method and a photomask manufacturing method for a liquid crystal display device according to the present invention have been described. However, the present invention is not limited thereto, and the claims and the detailed description of the invention and the accompanying drawings are described. Various modifications can be made within the scope, and this also belongs to the scope of the present invention.

When the blank mask and photomask manufactured by the blank mask and photomask manufacturing method for a liquid crystal display device according to the present invention as described above are applied to a flat panel display substrate manufacturing process such as a semiconductor integrated circuit and a liquid crystal display device, conventional 4- As in the mask photo process, it is possible to drastically improve the problem of the uniformity of the remaining amount of resist generated due to the shortening of the cost and time for manufacturing the mask for controlling the diffracted light according to the use of a slit mask, and the limitation of the diffracted light control. By improving product maturity, you can increase product competitiveness by reducing cost.

In the blank mask manufacturing method for a liquid crystal display device according to the present invention, since a semi-transmissive film having characteristics of low transmittance and incoherent phase is used, straight light can be used in manufacturing a desired pattern, and thus a slit mask can be used. It is possible to overcome the intermittent errors in the 4-mask process by preventing pattern dimensional mis-production, which can be caused by the outermost diffracted light, and to increase the completeness of the 4-mask process.                     

Furthermore, it can bring about the diffusion effect such as being applicable to application to flat panel display other than 3-mask process, semiconductor integrated circuit, and liquid crystal display device.

Claims (16)

When manufacturing a photomask for semiconductor integrated circuits or flat panel displays, at least one or more of a semi-transmissive film, a light shielding film, and an antireflection film is sequentially selected and stacked on a transparent substrate in order to maintain a uniform resist residual amount due to the semi-transmissive film during the development process. And applying a resist on the film. The method according to claim 1, The semi-permeable membrane formed in step b1) is formed by a sputtering method in a vacuum chamber in which inert and active gases are introduced using a metal as a matrix. Cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium (Ti), niobium (Nb), At least one selected from the group consisting of zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), and silicon (Si) Used alone or as a compound, As the inert gas, at least one selected from the group consisting of argon (Ar), helium (He), neon (Ne), and xenon (Xe) is used. The active gas is oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₃ ) A blank mask manufacturing method for a liquid crystal display device using at least one selected from the group consisting of methane (CH ₄ ). The method according to claim 2, The semi-transmissive layer is made of molybdenum nitride (MoSiN), molybdenum silicide (MoSiO), molybdenum carbide (MoSiC), molybdenum carbide (MoSiCO), molybdenum nitride (MoSiCN) when the metal matrix is molybdenum silicide (MoSi) combination ), A method of manufacturing a blank mask for a liquid crystal display device, which is formed of a film containing at least one of molybdenum oxynitride silicide (MoSiON) and molybdenum oxynitride silicide (MoSiCON). The method according to claim 2, The semi-transmissive film is made of aluminum nitride (AlN), aluminum oxide (AlO), aluminum carbide (AlC), aluminum carbide (AlCO), aluminum carbide (AlCN), aluminum oxynitride (AlN) A blank mask manufacturing method for a liquid crystal display device, which is formed of a film comprising at least one of AlON) and aluminum carbide oxynitride (AlCON). The method according to claim 2, The content of the semi-permeable membrane is selected from 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), 0 to 60 at% of nitrogen (N), and 20 to 60 at% of silicon (Si). A blank mask manufacturing method for a liquid crystal display device. The method according to claim 2, The semi-transmissive film is a blank mask manufacturing method for a liquid crystal display device comprising a continuous film or a low-permeable film and a high-permeable film that is made so that the constituents change from the transparent substrate to the upper layer is composed of two or more layers. The method according to claim 2, The semi-permeable membrane is at least 1 from the group consisting of argon (Ar), helium (He), neon (Ne), and xenon (Xe) as the inert gas under conditions of a vacuum degree of 1 to 5 mTorr and an applied power of 0.5 to 2 kW of the vacuum chamber. Select one or more species, and the active gas is oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), at least one selected from the group consisting of ammonia (NH ₃ ), methane (CH ₄ ) and used, The mixing ratio of the inert gas and the active gas is a blank mask manufacturing method for a liquid crystal display device, wherein the inert gas: active gas is 1 to 95%: 0.1 to 100%. The method according to claim 2, The transflective film is formed such that the phase difference φ satisfies φ≤ ± (1/2 + 2n) π (where n is 0, 1, 2, 3 .....), The semi-transmissive film is a film having a transmittance of 5 to 60% at a wavelength of 300 to 800 nm, a phase shift of 0 to 90 °, and a thickness of 50 to 4500 mW. The method according to any one of claims 1 to 8, The light shielding film and the antireflection film are formed using a vacuum deposition method in a vacuum chamber in which an inert gas and a reactive gas are introduced using a metal as a matrix. Cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium (Ti), niobium (Nb), At least one selected from the group consisting of zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), and silicon (Si) Using, As the inert gas, at least one or more selected from argon (Ar), helium (He), neon (Ne), and xeon (Xe) is used, The reactive gas may include oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), and ammonia (NH). ₄ ) A blank mask manufacturing method for a liquid crystal display device using at least one selected from methane (CH ₄ ). The method according to claim 9, The light shielding film and the anti-reflection film are chromium oxide (CrO), chromium nitride (CrN), chromium carbide (CrC), chromium carbide (CrCO), chromium nitride (CrCN), and chromium oxynitride when the metal matrix is chromium (Cr). A blank mask manufacturing method for a liquid crystal display device, which is formed of a film containing at least one of (CrON) and chromium oxynitride (CrCON). The method according to claim 9, The light shielding film and the anti-reflection film are formed of aluminum oxide (AlO), aluminum nitride (AlN), aluminum carbide (AlC), aluminum nitride (AlCN), aluminum carbide (AlCO), or aluminum oxynitride when the metal matrix is aluminum (Al). A blank mask manufacturing method for a liquid crystal display device, which is formed of a film containing at least one of AlON and aluminum carbide oxynitride (AlCON). The method according to claim 9, The content of the light shielding film and the antireflection film is selected from 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), 0 to 60 at% of nitrogen (N), and 20 to 60 at% of silicon (Si). A blank mask manufacturing method for a liquid crystal display device made of a metal. The method according to claim 9, The light shielding film and the anti-reflection film are composed of a continuous film or two or more layers having no film classification, which is made so that the component content changes from the transparent substrate to the upper film, and the thickness of the film is 50 to 2500Å. . The method according to claim 9, The light shielding film and the anti-reflection film are formed from argon (Ar), helium (He), neon (Ne), and xenon (Xe) as the inert gas under conditions of a vacuum degree of 1 to 5 mTorr and an applied power of 0.5 to 2 kV of a vacuum chamber. At least one selected and used, the reactive gas is oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO) At least one selected from the group consisting of nitrogen dioxide (NO ₂ ), ammonia (NH ₃ ) and methane (CH ₄ ), The mixing ratio of the inert gas and the reactive gas is a blank mask manufacturing method for a liquid crystal display device, wherein the inert gas: reactive gas is 1 to 95%: 0.1 to 100%. The photomask manufacturing method of selecting and patterning at least 1 sort (s) of the film | membrane, the light shielding film, and the anti-reflective film formed on the blank mask manufactured by the manufacturing method of the blank mask for liquid crystal display devices of any one of Claims 1-14. A blank mask manufacturing method for producing a semiconductor integrated circuit or a flat panel display, using selectively among all the processes according to any one of claims 1 to 15.

Images