KR100676652B1 - Process of Blankmask or Photomask for Liquid Crystal Display - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a blank mask and a photomask manufacturing method for a liquid crystal display device for solving the problem of uniformity of resist residual amount due to diffracted light passing through the slit in manufacturing a liquid crystal display device using a slit mask.

That is, the resist of the semi-transmissive layer area during the exposure process of the liquid crystal display device manufacturing process may be incompletely exposed so that the residual amount of the resist may be uniformly controlled during the developing process, thereby improving productivity and increasing process margin according to the manufacturing process. The present invention provides a method for forming a transparent substrate, forming a transflective film on the transparent substrate, forming an etchstop film on the transflective film, forming a light shielding film and an antireflection film on the etchstop film, and then applying a resist on the antireflection film. It provides a blank mask and a photomask manufacturing method for a liquid crystal display device comprising the step of applying.

LCD, blank mask, photo mask, transmittance, retardation, transflective film, exposure, development, slit, uniformity

Description

Blank mask or photomask manufacturing method for liquid crystal display device {Process of Blankmask or Photomask for Liquid Crystal Display}

1 is a cross-sectional process diagram schematically showing an embodiment of a blank mask manufacturing method for a liquid crystal display according to the present invention.

2 is a cross-sectional process diagram schematically showing an embodiment of a method for manufacturing a photomask for a liquid crystal display according to the present invention.

3 is a cross-sectional process diagram schematically showing still another embodiment of a method for manufacturing a photomask for a liquid crystal display according to the present invention.

4 is a cross-sectional process diagram illustrating a process of manufacturing a photomask for a liquid crystal display device according to the present invention using a conventional binary blank mask.

5 is a cross-sectional process diagram illustrating a process of manufacturing a liquid crystal display using a photomask for a liquid crystal display according to the present invention.

6 is a cross-sectional process diagram illustrating a process of manufacturing a liquid crystal display using a photomask for a liquid crystal display using slit mask technology.

The present invention relates to a blank mask and a photomask manufacturing method for a liquid crystal display device, and to dry etching by forming a semi-permeable film that is easy to wet etching during the etching process commonly used in the process for manufacturing a semi-transmissive film of the photomask manufacturing process. The present invention relates to a blank mask and a photomask manufacturing method for a liquid crystal display device capable of manufacturing cost-saving and high value-added products through quality completion and process simplification without the investment of equipment.

In the 4-mask process using the slit mask technology in the liquid crystal display (LCD) manufacturing process, a metal film is formed on a substrate, and then the gate line is formed through an exposure process, a developing process, and an etching process using a first mask. After patterning, an insulator film, an a-Si film, an n + a-Si film, and a metal film are sequentially formed on the gate line, an exposure process and a developing process are performed using a slit mask, which is a second mask. In the second mask, the portion without the pattern is completely exposed to expose the surface of the metal layer, but the portion where the slit is formed is incompletely exposed due to the diffraction phenomenon of the exposure light, so that the remaining film of the resist remains in the developing process. At this time, when the pattern of the slit becomes fine or the structure is complicated, it becomes difficult to control the control of the diffracted light passing through the slit and the uniformity of the resist residual amount, resulting in cost loss in terms of production and yield.

In order to solve the above problems, when the phase inversion mask is used as a slit mask, the phase difference of the exposure light passing through the phase inversion film is designed to have a 180 degree and a specific transmittance at a specific wavelength. Since the fine pattern is formed by using the interference of exposure light, it is difficult to control the resist residual amount and uniformity due to the characteristics of high transmittance and high phase difference at the exposure wavelength for the liquid crystal display device manufacturing process.

The present invention is to solve the above problems by using a semi-permeable membrane that is easy to adjust the transmittance and phase difference.

An object of the present invention is to change the structure of the film of the blank mask to be easily applied to the wet etching and dry etching process in a large area photomask process to provide a reliability and process margin during the photomask manufacturing process and at the same time to manufacture a blank mask Since the process and the photomask manufacturing process can be carried out continuously or discontinuously, as in the case of the second mask of the 4-mask process using the slit mask technology, a complete exposure area and an incomplete exposure area are formed and exposed twice with only one exposure process. It is to provide a blank mask and a photomask manufacturing method for a liquid crystal display device which can achieve the same effect as the process.

Another object of the present invention is to form a semi-transmissive film having a low transmittance and a low phase difference at a specific wavelength, thereby reducing the residual amount of resist in manufacturing a liquid crystal display device without forming a fine slit pattern that is difficult to control in a photomask to which the slit mask technology is applied. It is possible to provide a blank mask and a photomask manufacturing method for a liquid crystal display device capable of controlling uniformity and increasing productivity and process stability according to a manufacturing process.

In order to achieve the above object, the present invention provides a blank mask manufacturing method for a liquid crystal display device comprising the steps of: a1) forming a transparent substrate; b1) forming a transflective film on the transparent substrate formed in step a1); c1) forming an etch stop film on the transflective film formed in step b1); d1) forming a light shielding film on the etch stop film and / or the semi-transmissive film formed in step c1); e1) forming an anti-reflection film on the light shielding film formed in step d1); f1) comprising applying a resist on the anti-reflection film formed in step e1).

The transparent substrate formed in step a1) is made of glass or quartz, and refers to a 5-12 inch flat panel display manufacturing substrate having a transmittance of 90% or more.

The flat panel display includes a liquid crystal display (LCD), a plasma panel display (PDP), an electroluminescent display (FED), and the like.

The semi-permeable membrane formed in step b1) is formed by reactive sputtering or vacuum deposition in a vacuum chamber in which inert and reactive gases are introduced using a metal as a matrix.

The metal matrix used to form the semi-transmissive film is cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium ( Made of Ti, niobium (Nb), zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), silicon (Si), etc. At least one or more selected from the group are used alone or in combination.

At least one selected from the group consisting of argon (Ar), helium (He), neon (Ne), xenon (Xe), and the like is used as the inert gas used in forming the semi-permeable membrane, and oxygen is used as the reactive gas. (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₃ ), methane ( CH ₄ ) and at least one selected from the group consisting of.

When the metal matrix of the semi-permeable membrane is chromium (Cr) combination, chromium nitride (CrN), chromium oxide (CrO), chromium carbide (CrC), chromium carbide (CrCO), chromium nitride (CrCN), and chromium oxynitride ( CrON), chromium carbide oxynitride (CrCON), or the like.

The component content of the semi-permeable membrane consisting of the membrane of the above components is selectively set and applied from 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), and 0 to 60 at% of nitrogen (N), and the rest is applied. It is made of chromium (Cr).

The semi-permeable membrane is composed of two or more layers of a continuous membrane or a low-permeable membrane and a high-permeable membrane, which are manufactured so that the constituents change from the transparent substrate to the upper layer.

The argon (Ar): nitrogen (N ₂ ): carbon dioxide (CO ₂ ): methane (CH ₄ ), which is a mixing ratio of the reactive gas under the conditions of the vacuum chamber 1 to 5 mTorr and the applied power of 0.5 to 2 kW, in the above. 80 sccm: 20 to 95 sccm: 0 to 30 sccm: 0 to 30 sccm.

The mixing ratio of the inert gas and the reactive gas introduced into the vacuum chamber is set so as to keep the inert gas: reactive gas in the range of 1 to 95%: 0.1 to 100%.

The semi-transmissive film is a film having a transmittance of 5 to 60% at a wavelength of 190 to 800 nm, a phase shift of 0 to 180 °, and a thickness of 50 to 4500 mW.

The semi-transmissive film is formed such that the phase difference φ satisfies the formula of φ≤ ± (1 + 2n) π, where n is 0, 1, 2, 3...

The etch stop film formed in step c1) is formed using a reactive sputtering or vacuum deposition method in a vacuum chamber in which an inert gas and a reactive gas are introduced using a metal as a matrix.

Examples of the metal matrix used for forming the etchstop film include cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), and titanium ( Made of Ti, niobium (Nb), zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), silicon (Si), etc. At least one or more selected from the group are used alone or in combination.

At least one selected from argon (Ar), helium (He), neon (Ne), xeon (Xe), and the like is used as the inert gas used to form the etchstop film, and oxygen (O ₂ ) is used as the reactive gas. , Nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₄ ), methane (CH ₄ ), etc. At least 1 type is selected and used.

The etchstop layer is formed of aluminum oxide (AlO), aluminum nitride (AlN), aluminum carbide (AlC), aluminum nitride (AlCN), aluminum carbide (AlCO), aluminum oxynitride (AlON) when the metal matrix is aluminum (Al). ), Aluminum carbide oxynitride (AlCON) and the like.

In addition, when forming the etch stop (Etch Stop) film can be prepared so that the constituents change from the semi-permeable membrane to the upper layer, it is also possible to manufacture to facilitate the phase and permeation control in combination with the semi-permeable membrane. .

The component content of the light shielding film which consists of a film of such a component is 0-20 at% of carbon (C), 0-60 at% of oxygen (O), and 0-60 at% of nitrogen (N), and the remainder consists of aluminum (Al).

The light shielding film formed in step d1) is formed using a reactive sputtering or vacuum deposition method in a vacuum chamber in which an inert gas and a reactive gas are introduced using a metal as a matrix.

Examples of the metal matrix used in forming the light shielding film include cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), and titanium (Ti). ), Niobium (Nb), zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), silicon (Si), etc. At least one or more is selected from and used alone or as a compound.

At least one selected from argon (Ar), helium (He), neon (Ne), xeon (Xe), and the like is used as an inert gas used for forming the light shielding film, and the reactiveness is selected from oxygen (O ₂ ), At least in nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₄ ), methane (CH ₄ ), and the like. Select and use one or more.

When the metal matrix is chromium (Cr), chromium oxide (CrO), chromium nitride (CrN), chromium carbide (CrC), chromium carbide (CrCO), chromium nitride (CrCN), and chromium nitride (CrON) , Chromium carbide oxynitride (CrCON) or the like.

The component content of the light shielding film which consists of a film of such a component is 0-20 at% of carbon (C), 0-60 at% of oxygen (O), and 0-60 at% of nitrogen (N), and the remainder is chromium (Cr).

The anti-reflection film formed in step e1) is formed using a reactive sputtering or vacuum deposition method in a vacuum chamber in which an inert gas and a reactive gas are introduced using a metal as a matrix.

The metal matrix used for forming the anti-reflection film is cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium ( Made of Ti, niobium (Nb), zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), silicon (Si), etc. At least one or more selected from the group are used alone or in combination.

At least one selected from argon (Ar), helium (He), neon (Ne), xeon (Xe), and the like is used as the inert gas used to form the antireflection film, and oxygen (O ₂ ) is used as the reactive gas. , Nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₄ ), methane (CH ₄ ), etc. At least 1 type is selected and used.

The anti-reflection film is chromium oxide (CrO), chromium nitride (CrN), chromium carbide (CrC), chromium carbide (CrCO), chromium nitride (CrCN), and chromium nitride (CrON) when the metal matrix is chromium (Cr). ), And chromium carbide oxynitride (CrCON) or the like.

The component content of the antireflection film composed of the film of the above components is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), and 0 to 60 at% of nitrogen (N), and the rest is made of chromium (Cr). .

The light shielding film and the anti-reflection film may be composed of a continuous film or two or more films having no film classification, in which nitrogen content increases toward the transparent substrate.

In the steps c1) and d1), argon (Ar): nitrogen (N ₂ ): carbon dioxide (CO ₂ ): methane ( CH ₄ ) is preferably set from ₅ to 80 sccm: 20 to 95 sccm: 0 to 30 sccm: 0 to 30 sccm.

The mixing ratio of the inert gas and the reactive gas introduced into the vacuum chamber in steps c1) and d1) is set so that the inert gas: reactive gas is in the range of 1 to 95%: 0.1 to 100%.

In addition, in the steps b1), c1), d1) and e1), it is possible to heat the substrate to a predetermined temperature (about 80 to 500 ° C) as a method for improving the adhesion and the growth of the film.

In addition, in consideration of stress relaxation and etching characteristics during vacuum deposition, annealing may be performed at a predetermined temperature (about 200 to 600 ° C).

The resist coated on the anti-reflection film in step f1) is optical photoresist THMR-iP3500, THMR-iP3600, DPR-i7000 and E-Beam resist EBR-9, PBS, ZEP-7000 It is selected from among alkali-soluble resin such as positive chemically amplified resist FEP-171, negative chemically amplified resist FEN-270 and NEB-22, and a resist composed of PAG (Photo Acid Generator).

The resist to be coated on the antireflection film is formed by spin coating or capillary coating, and the resist film is preferably maintained at a thickness of about 1,000 to 6,000 kPa.

After applying the resist as described above, using a hot plate (Soft plate) to perform a soft bake (Soft Bake) at a temperature range of about 50 ~ 250 ℃ to prepare a blank mask according to the present invention.

The photomask manufacturing method of the present invention comprises the steps of: a2) exposing a blank mask manufactured by the manufacturing process of steps a1) to f1) with an electron beam or a laser of monochromatic light; b2) forming a resist pattern on the portion exposed in step a2) using a developer; c2) etching the light-shielding film and the anti-reflection film through a wet or dry etching process by using the resist pattern formed in step b2) as a masking; d2) etching the etch stop film through a wet or dry etching process using the resist pattern formed in step b2) as a masking; e2) etching the semi-permeable layer through a wet or dry etching process using the resist pattern formed in step b2) as a masking; f2) removing the resist film used for pattern formation in steps c2) to e2); g2) forming a resist film on the photomask in which the primary pattern is formed in step f2); h2) exposing the resist film formed in step g2) with an electron beam or a laser of monochromatic light; i2) forming a resist pattern on the portion exposed in step h2) using a developer; j2) etching the light shielding film and the anti-reflection film through a wet or dry etching process using the resist pattern formed in step i2) as a masking; k2) etching the etch stop film through a wet or dry etching process using the resist pattern formed in step i2) as a masking; l2) removing and cleaning the resist film used for pattern formation in steps j2) to k2).

In the case of the exposure energy used in the exposure process in step a2), a pattern is formed using monochromatic light (190 to 500 nm) or electron beam (10 to 100 KeV).

In the case of a chemically amplified resist, the post exposure bake temperature is 50 to 200 ° C, and the time is 3 to 30 minutes.

A resist pattern is formed using a developer such as TMAH, NMD-W, etc. for forming a pattern of the portion exposed in step b2).

In the process of etching the light shielding film and the anti-reflection film by using the resist pattern formed through the process b2) in step c2), in the case of wet etching, chromium (Cr) etchant such as CR-7 or CR-9 and Al- Aluminum (Al) etchant such as 11K is used to match the parent material, and in the case of dry etching, the pattern is formed by plasma method and reactive ion etching method using SF ₄ , CF ₄ , Cl ₂ , Cl, O ₂ , He gas, etc. Form.

In the process of etching the etch stop layer by using the resist pattern formed through the process b2) in step d2), in the case of wet etching, chromium (Cr) etchant such as CR-7 or CR-9 and the like. An aluminum (Al) etchant such as Al-11K is used for the parent material, and in the case of dry etching, the plasma method and the reactive ion etching method using SF ₄ , CF ₄ , Cl ₂ , Cl, O ₂ , He gas, etc. Form a pattern.

In the process of etching the semi-permeable layer using the resist pattern formed through the process b2) in step e2), in the case of wet etching, chromium (Cr) etchant such as CR-7 or CR-9, Al-11K, etc. Use aluminum (Al) etchant in accordance with the parent material, and in the case of dry etching, pattern is formed by plasma method and reactive ion etching method using SF ₄ , CF ₄ , Cl ₂ , Cl, O ₂ , He gas, etc. .

In step f2), using a nanostrip solution or sulfuric acid (H ₂ SO ₄ ), the temperature is set to 30 to 100 ° C. and the time is about 10 to 60 minutes to completely remove the resist used for pattern formation. The cleaning process removes contaminants and particles from the surface through the SPM and SC-1 processes.

The resist applied to the light shielding film and the anti-reflective film pattern in step g2) includes optical photoresist THMR-iP3500, THMR-iP3600, DPR-i7000 and E-Beam resist EBR-9, PBS, It is selected from among alkali-soluble resins such as ZEP-7000, positive chemically amplified resist FEP-171, negative chemically amplified resist FEN-270, and NEB-22, and resists composed of components composed of PAG (Photo Acid Generator). .

The resist applied on the light shielding film and the antireflection film pattern forms a resist film by spin coating or capillary coating, and the thickness of the resist film is preferably maintained at about 1,000 to 6,000 kPa.

After applying the resist as described above, it is preferable to perform a soft bake (Soft Bake) in a temperature range of approximately 50 ~ 250 ℃ using a hot plate (Hot Plate).

In the case of the exposure energy used in the exposure process in step h2), a pattern is formed using monochromatic light (190 to 500 nm) or electron beam (10 to 100 KeV).

In the case of a chemically amplified resist, the post exposure bake temperature is 50 to 200 ° C. and the time is 3 to 30 minutes.

A resist pattern is formed using a developer such as TMAH or NMD-W for forming a pattern of the portion exposed in step i2).

In the process of etching the light shielding film and the anti-reflection film by using the resist pattern formed through the step i2) in step j2), in the case of wet etching, chromium (Cr) etchant such as CR-7 or CR-9 and Al- Aluminum (Al) etchant such as 11K is used to match the parent material, and in the case of dry etching, the pattern is formed by plasma method and reactive ion etching method using SF ₄ , CF ₄ , Cl ₂ , Cl, O ₂ , He gas, etc. Form.

In the process of etching the etch stop layer using the resist pattern formed through the process i2) in step k2), in the case of wet etching, chromium (Cr) etchant such as CR-7 or CR-9 and the like. An aluminum (Al) etchant such as Al-11K is used for the parent material, and in the case of dry etching, the plasma method and the reactive ion etching method using SF ₄ , CF ₄ , Cl ₂ , Cl, O ₂ , He gas, etc. Form a pattern.

In step l2), using a nanostrip solution or sulfuric acid (H ₂ SO ₄ ), the temperature is set to 30 to 100 ° C. and the time is about 10 to 60 minutes to completely remove the resist used for pattern formation. In addition, the cleaning process removes contaminants and particles from the surface through the SPM and SC-1 processes to manufacture the photomask for the liquid crystal display device according to the present invention.

A3) forming a transparent substrate when the photomask is manufactured by using the blank mask manufacturing process and the photomask manufacturing process according to the present invention in a discontinuous process; b3) continuously forming a transflective film or a light shielding film and an antireflection film on the transparent substrate formed in step a3); c3) applying a resist on the transflective film or the light shielding film and the anti-reflection film formed in step b3); d3) selectively exposing the resist formed in step c3) using exposure light; e3) forming a resist pattern by using a developer for the resist region exposed in step d3); f3) selectively removing the semi-permeable membrane and other regions by wet etching or dry etching using the resist pattern formed in step e3) as a masking; g3) cleaning to remove unnecessary resist patterns and removing foreign matter; h3) forming an etch stop film or a semi-permeable film on the semi-permeable film pattern; i3) forming a light shielding film and an anti-reflection film on an etch stop film or a semi-transmissive film; j3) applying a resist on the anti-reflection film or semi-transmissive film formed in step i3); k3) selectively exposing the resist formed in step j3) using exposure light; l3) developing the resist region exposed in step k3) using a developer to form a resist pattern; m3) removing the light shielding film and the anti-reflection film pattern by wet etching or dry etching using the resist pattern formed in step l3) as a masking; n3) removing the etchstop layer pattern by wet etching or dry etching when the etchstop layer is used using the resist pattern formed in step l3) as a masking; o3) removing unnecessary resist patterns and cleaning to remove foreign matter.

Conditions for each process step are performed by setting the same in the case of the same step in the blank mask manufacturing process and the photomask manufacturing process.

The method for manufacturing a semiconductor integrated circuit and / or a flat panel display using the photomask for a liquid crystal display device of the present invention comprises the steps a5) to a2) to l2), a3) to f3), and a4) to h4). Exposing the photomask manufactured by using a device such as a stepper; b5) forming a resist pattern using a developing solution on a part of the fully exposed and incompletely exposed part in the step a5); c5) etching the metal film, the n + a-Si film, and the a-Si film by a wet or dry etching process using the resist pattern formed in step b5) as a masking; d5) The resist of the portion that was incompletely exposed in the step b5) was removed by the ashing process through the ashing process while the surface of the metal film was exposed through the step c5), and the source and the resist pattern were masked. Etching through a wet or dry etching process up to an n + a-Si film to form a drain pattern; e5) removing and cleaning the resist film used for pattern formation in step d5).

The blank mask manufactured through the manufacturing process of steps a1) to f1) is not only a liquid crystal display device but also a semiconductor integrated circuit, a flat panel display (LCD, PDP, It is also applicable to manufacturing FED).

Hereinafter, the present invention will be described in detail with reference to examples, but the examples are used only for the purpose of illustration and explanation of the present invention, and are used to limit the scope of the present invention as defined in the meaning or claims. no. Therefore, those skilled in the art will understand that various modifications and equivalent other embodiments are possible from the embodiments. Therefore, the true technical protection scope of the present invention will be defined by the technical details of the claims.

Example 1

1 is a schematic cross-sectional view showing an embodiment of a blank mask manufacturing method for a liquid crystal display according to the present invention.

First, argon (Ar), nitrogen (N ₂ ), carbon dioxide (CO ₂ ), and methane (CH ₄ ) gases are targeted to chromium (Cr) on a 6-inch transparent substrate 2 made of quartz. Reactive sputtering forms chromium oxynitride (CrCON), which is the transflective film 4 (P10).

The composition of the chromium oxynitride (CrCON) film, which is the semipermeable film 4, is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), and 0 to 60 at% of nitrogen (N), and the rest is chromium. (Cr).

The semi-permeable membrane 4 is argon (Ar): nitrogen (N ₂ ): carbon dioxide (CO ₂ ): methane (CH ₄ ), which is a mixing ratio of a reactive gas under a condition in which the vacuum degree of the vacuum chamber is 2 mTorr and the applied power is 1 kW. ) 5 to 80 sccm: 20 to 95 sccm: 0 to 10 sccm: 0 to 10 sccm.

The transflective film 4 is formed into a film having a transmittance of 20 to 30% at a wavelength of 400 to 600 nm, a phase difference of 0 to 50 °, and a thickness of 300 to 400 mW.

Reactive sputtering using argon (Ar) and nitrogen (N ₂ ) gas is performed on the semi-permeable membrane 4 to target aluminum (Al), and aluminum nitride (AlN), which is an etch stop layer 6, is formed. ) Is formed to a thickness of 50 to 100 mm 3 (P11).

The composition of the aluminum nitride (AlN) film, which is the etch stop film 6, is 0 to 70 at% of nitrogen (N), and the rest is made of aluminum (Al).

Subsequently, chromium nitride (CrN), which is the light shielding film 8, is formed to have a thickness of 660 kV by reactive sputtering using argon (Ar) and nitrogen (N ₂ ) gas on the etch stop film 6 as a target. (P12).

The composition of the chromium nitride (CrN) film as the light shielding film 8 is 0 to 60 at% of nitrogen (N), and the rest is made of chromium (Cr).

Reactive sputtering using argon (Ar), nitrogen (N ₂ ), and carbon dioxide (CO ₂ ) gas is performed on the light blocking film 8 as a target of chromium (Cr) to form an anti-reflection film 10 as an oxynitride carbide chromium nitride ( CrCON) is formed to a thickness of 110 kPa (P13).

The composition of the anti-reflection film 10, the chromium oxynitride chromium carbide (CrCON) film is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), 0 to 60 at% of nitrogen (N), and the rest is chromium (Cr). )

After forming a resist film 12 having a thickness of 3000 Å on the anti-reflection film 10 using a spin coating method, a soft bake was performed on a hot plate to manufacture a blank mask for a liquid crystal display device according to the present invention. (P14).

In the above, soft baking is performed by setting temperature to 200 degreeC, and setting time to about 15 minutes.

Next, an embodiment of a photomask manufacturing method according to the present invention using a blank mask manufactured by the above process will be described with reference to FIG. 2.

First, an electron beam having an acceleration voltage of 10 kV is selectively applied to the resist film 12 of the blank mask manufactured as described above, and exposed in a predetermined pattern with an energy of 10 μC / cm 2 (P20).

A resist pattern is formed by developing GED-500, which is a developer, for 70 seconds in a spray method on the exposed portion as described above (P21).

The antireflection film 10 pattern and the light shielding film 8 pattern are formed by wet etching for 60 seconds using the CR-7 using the resist pattern formed as described above (P22).

Using the resist pattern formed as described above as a masking, an etch stop layer 6 pattern is formed through wet etching for 20 seconds using AL-11K (P23).

Using the resist pattern formed as described above, a semi-transmissive layer 4 pattern is formed through wet etching for 30 seconds using CR-7 (P24).

In addition, the sulfuric acid is removed by dipping for 30 minutes at 90 ° C. to remove the unnecessary resist film 12, and then, through the SPM and SC-1 processes, the contaminants and particles adhered to the surface are completely removed. Remove (P25).

After forming the resist film 14 having a thickness of 4650 Å on the light-shielding film and the anti-reflection film 10 by using a spin coating method, a soft bake is performed on a hot plate (P26).

In the above, soft baking is performed at 110 degreeC for about 15 minutes.

Next, the resist film 14 is selectively exposed in a predetermined pattern with an energy of 95 mJ (P27).

In order to form the resist pattern 14 of the exposed portion as described above, NMD-W, which is a developer, is developed by spraying for 70 seconds to form a pattern (P28).

The antireflection film 10 pattern and the light shielding film 8 pattern are formed through wet etching for 60 seconds using the CR-7 using the resist pattern 14 formed as described above as masking (P29).

The resist pattern formed as described above is used as masking to form an etch stop layer pattern through wet etching for 20 seconds using AL-11K (P30).

In addition, the sulfuric acid is removed by dipping for 30 minutes at 90 ° C. to remove the unnecessary resist film 14 and then, through the SPM and SC-1 processes, to remove contaminants and particles from the surface. (P31).

Through the process as described above to produce a photomask according to the present invention.

Example 2

First, as shown in FIG. 3, argon (Ar), nitrogen (N ₂ ), carbon dioxide (CO ₂ ), and methane (Cr) are targeted to chromium (Cr) on a 6-inch transparent substrate 2 made of quartz. Reactive sputtering using CH ₄ ) gas forms chromium oxynitride (CrCON), which is a semi-permeable membrane (P40).

The composition of the chromium oxynitride (CrCON) film, which is the semipermeable film 4, is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), and 0 to 60 at% of nitrogen (N), and the rest is chromium. (Cr).

The semi-permeable membrane 4 is argon (Ar): nitrogen (N ₂ ): carbon dioxide (CO ₂ ): methane (CH ₄ ), which is a mixing ratio of a reactive gas under a condition in which the vacuum degree of the vacuum chamber is 2 mTorr and the applied power is 1 kW. ) 5 to 80 sccm: 20 to 95 sccm: 0 to 10 sccm: 0 to 10 sccm.

The transflective film 4 is formed into a film having a transmittance of 20 to 30% at a wavelength of 400 to 600 nm, a phase difference of 0 to 50 °, and a thickness of 300 to 400 mW.

After the IP-3500 is formed on the semi-transmissive film 4 pattern by spin coating, a resist film 16 having a thickness of 4650 mm 3 is formed and then soft baked on a hot plate (P41).

In the above, soft baking is performed at 110 degreeC for about 15 minutes.

Next, the resist film 16 is selectively exposed in a predetermined pattern with an energy of 95 mJ (P42).

In order to form the resist pattern 16 of the exposed portion as described above, the developing solution NMD-W is developed by spraying for 70 seconds to form a pattern (P43).

Using the resist pattern formed as described above as a masking, a semi-transmissive layer 4 pattern is formed through wet etching for 30 seconds using CR-7 (P44).

Then, the sulfuric acid is removed by dipping for 30 minutes at 90 ° C. to remove the unnecessary resist film 16, and then, through the SPM and SC-1 processes, the contaminants and particles adhered to the surface are removed. Remove it completely (P45).

Reactive sputtering using argon (Ar) and nitrogen (N ₂ ) gas is performed on the semi-transmissive film 4 to target aluminum (Al), thereby obtaining aluminum nitride (AlN) as the etch stop film 6. It is formed to a thickness of 50 to 100 mm 3 (P46).

The composition of the aluminum nitride (AlN) film, which is the etch stop film 6, is 0 to 70 at% of nitrogen (N), and the rest is made of aluminum (Al).

Subsequently, chromium nitride (CrN), which is the light shielding film 8, is formed to have a thickness of 660 kV by reactive sputtering using argon (Ar) and nitrogen (N ₂ ) gas on the etch stop film 6 as a target. do.

Reactive sputtering using argon (Ar), nitrogen (N ₂ ), and carbon dioxide (CO ₂ ) gas is performed on the light blocking film 8 as a target of chromium (Cr) to form an anti-reflection film 10 as an oxynitride carbide chromium nitride ( CrCON) is formed to a thickness of 110 kPa (P47).

The composition of the anti-reflection film 10, the chromium oxynitride chromium carbide (CrCON) film is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), 0 to 60 at% of nitrogen (N), and the rest is chromium (Cr). )

After the ZEP-7000 is formed on the anti-reflection film 10 by using a spin coating method, a resist film 18 having a thickness of 3000 Å is formed and then soft baked on a hot plate (P48).

In the above, the soft bake is conducted at a temperature of 200 ° C. for about 15 minutes.

The resist film 18 is exposed to a predetermined pattern with an energy of 10 µC / cm 2 using an electron beam selectively having an acceleration voltage of 10 kV (P49).

A resist pattern is formed by developing GED-500, which is a developer, in a spray method for 70 seconds on the exposed portion as described above (P50).

The light shielding film 8 and the anti-reflection film 10 pattern are formed by wet etching for 60 seconds using CR-7 using the resist pattern formed as described above (P51).

The resist pattern formed as described above is used as masking to form an etch stop layer pattern through wet etching for 20 seconds using AL-11K (P52).

Subsequently, sulfuric acid is removed by dipping for 30 minutes at 90 ° C. to remove the unnecessary resist film 18, and then a cleaning process is performed to remove foreign matters (P53).

Through the process as described above to produce a photomask according to the present invention.

Example 3

First, as shown in FIG. 4, reactive sputtering using argon (Ar), nitrogen (N ₂ ), and carbon dioxide (CO ₂ ) gas is used to target molybdenum silicide (MoSi) on the light blocking film and the antireflection film pattern of a binary photomask. In this way, molybdenum carbide nitride molybdenum (MoSiCON), which is the semi-transmissive film 4, is formed (P61).

The composition of the molten oxynitride nitride (MoSiCON) film, which is the transflective film 4, is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), 0 to 60 at% of nitrogen (N), and silicon (Si). ) 20 to 60 at%, and the remainder is made of molybdenum (Mo).

The semi-permeable membrane 4 is argon (Ar): nitrogen (N ₂ ): carbon dioxide (CO ₂ ): methane (CH ₄ ), which is a mixing ratio of a reactive gas under a condition in which the vacuum degree of the vacuum chamber is 2 mTorr and the applied power is 1 kW. ) 5 to 80 sccm: 20 to 95 sccm: 0 to 10 sccm: 0 to 10 sccm.

The transflective film 4 is formed into a film having a transmittance of 20 to 30% at a wavelength of 400 to 600 nm, a phase difference of 0 to 50 °, and a thickness of 300 to 400 mW.

After the ZEP-7000 is formed on the semi-permeable film 4 by using a spin coating method, a resist film 20 having a thickness of 3000 Å is formed and then soft baked on a hot plate (P62).

In the above, the soft bake is conducted at a temperature of 200 ° C. for about 15 minutes.

The resist film 20 is exposed to a predetermined pattern with an energy of 10 µC / cm 2 by using an electron beam selectively having an acceleration voltage of 10 kV (P63).

The resist pattern 20 is formed on the exposed portion by developing the GED-500, which is a developer, for 70 seconds by a spray method (P64).

The formation of the semi-transmissive film 4 pattern using the resist pattern formed as described above is performed by using helium (He), oxygen (O ₂ ), and fluorocarbon (CF ₄ ) gas by using the resist pattern as masking. Form by dry etching for seconds (P65).

Subsequently, sulfuric acid is subjected to dipping for 30 minutes at 90 ° C. to remove the unnecessary resist film 20, and then a cleaning process is performed to remove foreign substances (P66).

It is also possible to manufacture a photomask for a liquid crystal display device according to the present invention through the above process.

5 shows a process of manufacturing a liquid crystal display using a photomask for a liquid crystal display according to the present invention, and FIG. 6 shows a process of manufacturing a liquid crystal display using a photomask for a liquid crystal display using slit mask technology. Indicates.

A method of manufacturing a liquid crystal display device using the photomask for liquid crystal display device or the photomask for liquid crystal display device using the slit mask technology according to the present invention, as shown in Figs. The photomask using the photomask or slit mask technique manufactured by each manufacturing process of Example 3 is exposed with equipment such as a stepper (P70, P80), and the complete and incomplete exposure of the resist film 52 is performed. A resist pattern was formed on the portion using a developer (P71, P81), and the metal film 50, the n + a-Si film 48, and the a-Si film 46 were wetted using the formed resist pattern as a masking. Alternatively, the etching process is performed by dry etching (P72, P82), and the resist of the incompletely exposed portion is removed by the ashing process while the surface of the metal film 50 is exposed, and the resist pattern is masked. In order to form a source and a drain pattern by using a wet or dry etching process to the n + a-Si film 48 by etching (P73, P83), to remove and clean the resist film 52 used for pattern formation ( P74, P84) process.

It is also possible to manufacture a flat panel display, a semiconductor circuit and the like by the above process.

In Fig. 5, reference numeral 40 denotes a substrate, reference numeral 44 denotes an insulator film, and reference numeral 42 denotes a metal film.

In Fig. 6, reference numeral 31 denotes a slit.

In the above, a preferred embodiment of the blank mask manufacturing method for a liquid crystal display device and the photomask manufacturing method for a liquid crystal display device according to the present invention has been described, but the present invention is not limited thereto, and the claims and the detailed description of the invention and Various modifications can be made within the scope of the accompanying drawings, which also fall within the scope of the present invention.

According to the present invention, the limitation of the control of diffraction light and the uniformity of resist residual amount according to the use of a slit mask generated in a conventional four-mask photo process, according to the present invention, form a semi-transmissive film having characteristics of low transmittance and incoherent phase As a result, since the uniformity control of the resist residual amount can be controlled in the liquid crystal display device manufacturing process without forming the fine slit pattern, it is possible to greatly improve the four-mask process to improve the completeness of the product.

In addition, since the present invention has a structure in which an etch stop film is added, the same series of materials can be used for the semi-transmissive film, the light shielding film, and the anti-reflective film, so that it is easy for wet etching and dry etching processes, and reliability in the photomask manufacturing process. And process margin. Moreover, a blank mask manufacturing process and a photomask manufacturing process can be performed continuously or discontinuously.

In the case of a process capable of utilizing a conventional binary blank mask, the present invention can increase the product competitiveness for manufacturing a liquid crystal display device by bringing efficiency and cost-saving effect on the photomask manufacturing process for a liquid crystal display device.

Furthermore, the present invention can bring about a diffusion effect such as being applicable to application to flat panel displays other than 3-mask process, semiconductor integrated circuit and liquid crystal display device.

Claims (23)

After exposure and development, a complete exposure pattern in which the resist is completely removed, an incomplete exposure pattern in which the remaining resist film remains, and a pattern in which the resist is not removed are formed, thereby obtaining the effect of undergoing two exposure processes in one exposure process. In order to maintain a uniform resist residual amount due to the transflective film in the developing process, a semi-transmissive film (or a low-permeable film and a high-permeable film), an etch stop film, a light shielding film, and an antireflection film are formed on a transparent substrate, and then a resist is applied thereon. Including the steps of: The semi-permeable membrane is formed of a low-permeable membrane and a high-permeable membrane, or in the manufacture of the semi-permeable membrane and the etch stop membrane, the transmittance of the light passing through the two membranes is 5 to 60% at a wavelength of 190 to 800 nm so as to be uniform in the developing process. A blank mask manufacturing method for a liquid crystal display device, wherein the remaining amount of resist remains. The method according to claim 1, The semi-permeable membrane is formed by a sputtering method or a vacuum deposition method in a vacuum chamber in which inert and reactive gases are introduced using a metal as a matrix. Cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium (Ti), niobium (Nb), At least one selected from the group consisting of zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), and silicon (Si) Used alone or as a compound, As the inert gas, at least one selected from the group consisting of argon (Ar), helium (He), neon (Ne), and xenon (Xe) is used. The reactive gas may include oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), and ammonia (NH). ₃ ) A blank mask manufacturing method for a liquid crystal display device using at least one selected from the group consisting of methane (CH ₄ ). delete The method according to claim 2, The semi-permeable membrane is chromium nitride (CrN), chromium oxide (CrO), chromium carbide (CrC), chromium carbide (CrCO), chromium nitride (CrCN), and chromium oxynitride when the metal matrix is chromium (Cr) combination. A blank mask manufacturing method for a liquid crystal display device, which is formed of a film containing at least one of CrON) and chromium oxynitride (CrCON). The method according to claim 2, Component content of the semi-permeable membrane (or low permeable membrane and high permeable membrane) is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), 0 to 60 at% of nitrogen (N), and 20 to silicon (Si). A method of manufacturing a blank mask for a liquid crystal display device, wherein the metal matrix and the reactive gas are selected such that 60 at%, 0 to 40 at% of fluorine (F) and the remainder are made of metal. The method according to claim 2, The semi-transmissive film is a blank film manufacturing method for a liquid crystal display device comprising a continuous film or a low-permeable film and a high-permeable film are laminated in two or more layers that are made to change the constituent component toward the resist film. The method according to claim 2, The semi-permeable membrane is at least one selected from the group consisting of argon (Ar), helium (He), neon (Ne), and xenon (Xe) under conditions in which the vacuum chamber has a vacuum degree of 1 to 5 mTorr and an applied power of 0.5 to 2 kW. The above gas is selected and used, and the reactive gas is oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO) ₂ ), at least one selected from the group consisting of ammonia (NH ₃ ), methane (CH ₄ ), A method for manufacturing a blank mask for a liquid crystal display device, wherein the mixing ratio of the inert gas and the reactive gas is from 1 to 95% of 0.1 to 100% of inert gas: reactive gas. The method according to claim 2, The semi-transmissive film is formed so that the phase difference φ satisfies the formula of φ≤ ± (1 + 2n) π (where n is 0, 1, 2, 3 .....), And said transflective film is a film having a transmittance of 5 to 60% at a wavelength of 190 to 800 nm, a phase shift of 0 to 180 degrees, and a thickness of 50 to 4500 mW. The method according to claim 1, The etch stop film is formed by a sputtering method or a vacuum deposition method in a vacuum chamber in which an inert and reactive gas is introduced using a metal as a matrix, Cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium (Ti), niobium (Nb), At least one selected from the group consisting of zinc (Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), and silicon (Si) Used alone or as a compound, As the inert gas, at least one selected from the group consisting of argon (Ar), helium (He), neon (Ne), and xenon (Xe) is used. The reactive gas may include oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), and ammonia (NH). ₃ ), A blank mask manufacturing method for a liquid crystal display device using at least one selected from the group consisting of methane (CH ₄ ). The method according to claim 9, The etchstop film may be formed of aluminum nitride (AlN), aluminum oxide (AlO), aluminum carbide (AlC), aluminum carbide (AlCO), aluminum carbide (AlCN), or aluminum oxynitride (AlN). A blank mask manufacturing method for a liquid crystal display device, which is formed of a film comprising at least one of AlON) and aluminum carbide oxynitride (AlCON). The method according to claim 9, Component content of the etchstop membrane is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), 0 to 60 at% of nitrogen (N), 20 to 60 at% of silicon (Si), and 0 to 40 at% of fluorine (F) %, Wherein the remainder is made of a metal to select the metal matrix and the reactive gas blank manufacturing method for a liquid crystal display device. The method according to claim 9, The etchstop membrane is at least one selected from the group consisting of argon (Ar), helium (He), neon (Ne), and xenon (Xe) under conditions in which the vacuum chamber has a vacuum degree of 1 to 5 mTorr and an applied power of 0.5 to 2 kW. The above gas is selected and used, and the reactive gas is oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO) ₂ ), at least one selected from the group consisting of ammonia (NH ₃ ), methane (CH ₄ ), A method for manufacturing a blank mask for a liquid crystal display device, wherein the mixing ratio of the inert gas and the reactive gas is from 1 to 95% of 0.1 to 100% of inert gas: reactive gas. The method according to claim 9, The etchstop film is a blank mask manufacturing method for a liquid crystal display device comprising a continuous film or a low-permeable film and a high-permeable film which are manufactured so that the constituents change as the resist film is overlapped in two or more layers. The method according to claim 13, The etchstop film is formed on the semi-permeable film (or the low-permeable film and the high-permeable film), and the metal matrix is formed of the same material or different materials so that the transmittance of light passing through the two films is 5 to 60% at a wavelength of 190 to 800 nm. Method of manufacturing a blank mask for a liquid crystal display device. Claims 1, 2, 4 to 14 comprises a semi-permeable membrane (or a low permeable membrane and a high permeable membrane) formed by the manufacturing method of any one of claims 1 to 14, The light shielding film and the antireflection film are formed using a sputtering method or a vacuum deposition method in a vacuum chamber in which an inert gas and a reactive gas are introduced using a metal as a matrix. Cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium (Ti), niobium (Nb), Zinc (Zn), Hafnium (Hf), Germanium (Ge), Aluminum (Al), Platinum (Pt), Manganese (Mn), Iron (Fe), Silicon (Si), Nickel (Ni), Cadmium (Cd), At least one selected from the group consisting of zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), sulfur (S), As the inert gas, at least one or more selected from argon (Ar), helium (He), neon (Ne), and xeon (Xe) is used, The reactive gas includes oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₄ ) A blank mask manufacturing method for a liquid crystal display device using at least one selected from methane (CH ₄ ) and fluorine (F). The method according to claim 15, The light shielding film and the anti-reflection film are chromium oxide (CrO), chromium nitride (CrN), chromium carbide (CrC), chromium carbide (CrCO), chromium nitride (CrCN), and chromium oxynitride when the metal matrix is chromium (Cr). A blank mask manufacturing method for a liquid crystal display device, which is formed of a film containing at least one of (CrON) and chromium oxynitride (CrCON). The method according to claim 15, The content of the light shielding film and the antireflection film is 0 to 20 at% of carbon (C), 0 to 60 at% of oxygen (O), 0 to 60 at% of nitrogen (N), 20 to 60 at% of silicon (Si), and fluorine (F) 0 A blank mask manufacturing method for a liquid crystal display device, wherein the metal matrix and the reactive gas are selected so that the rest is made of metal. The method according to claim 15, The light shielding film and the anti-reflection film are composed of a continuous film or two or more layers which are manufactured so that the component content changes from the transparent substrate to the upper film and has a thickness of 50 to 2500 kPa. The method according to claim 15, The light shielding film and the anti-reflection film may be formed of at least one of argon (Ar), helium (He), neon (Ne), and xenon (Xe) under inert gas conditions in a vacuum chamber of 1-5 mTorr and an applied power of 0.5-2 kV. Reactive gases include oxygen (O ₂ ), nitrogen (N ₂ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitrous oxide (N ₂ O), nitrogen oxides (NO), nitrogen dioxide (NO ₂ ), ammonia (NH ₃ ), at least one or more selected from the group consisting of methane (CH ₄ ), A method of manufacturing a blank mask for a liquid crystal display device, wherein the mixing ratio of the inert gas and the reactive gas is from 1 to 95% of 0.1 to 100% of inert gas. Claims 1, 2, 4 and 19, a semi-transmissive film (or a low-permeable film and a high-permeable film), an etch stop film, a light shielding film, and an antireflection film formed on the blank mask for a liquid crystal display device manufactured by the manufacturing method of any one of claims 1 to 2. A method of manufacturing a photomask for a liquid crystal display device, wherein the liquid crystal display device selectively patterns one or more films. Claims 1, 2, 4 to 19 after the patterning blank mask or binary blank mask for liquid crystal display device manufactured by any one of the manufacturing method of any one of the semi-permeable (or low-permeable and high-permeable), etch stop film A method of manufacturing a photomask for a liquid crystal display device, in which at least one film is formed by patterning. Claims 1, 2, 4 to 19 selected from the semi-transmissive film (or low-permeable and high-permeable film), the etch stop film, the light shielding film, the antireflection film of the blank mask for the liquid crystal display device manufactured by any one of the manufacturing method A blank mask manufacturing process and a photomask fabrication process for patterning one or more films and then patterning them in a photomask manufacturing process, and forming an unpatterned film among the semi-transmissive film, etchstop film, light shielding film, and antireflection film and patterning the photomask manufacturing process. A method of manufacturing a photomask for a liquid crystal display device, wherein the process is carried out in a consistent continuous process. A method of manufacturing a blank mask and a photomask for the manufacture of a semiconductor integrated circuit or a flat panel display using the manufacturing method of any one of claims 1, 2, and 4 to 22 selectively.

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