KR20060036182A - Method for making metal mesh for field emission display - Google Patents

Abstract

Disclosed is a method of manufacturing a metal mesh for a field emission device. Applying photoresist on the metal electrode, exposing and developing the photoresist according to the designed pattern, carrying out electroplating using the plating material between the patterned photoresist, removing the photoresist and removing the plating material transferred from the metal electrode. Separate. It is possible to overcome the limitation of the thickness of the metal sheet due to the rolling and the mesh line width limitation due to the etching limit.

FED, pole, line width, nickel, coefficient of thermal expansion, ion concentration, current density, mesh

Description

Method for manufacturing metal mesh for field emission device {Method for making metal mesh for Field Emission Display}

1 is a process chart showing a manufacturing method according to an embodiment of the present invention.

2 is a graph showing TMA measurement results for several samples.

The present invention relates to a method of manufacturing a metal mesh for a field emission device, in particular a metal mesh for a field emission device that overcomes the thickness limitation of the material due to the rolling and the mesh line width limitation due to the etching limit by manufacturing the metal mesh using the pole casting method It relates to a method for producing a mesh.

In general, in a field emission display (FED), a metal mesh serves to focus emitted electrons.

In order to manufacture such a metal mesh, conventionally, a photo etching method has been mainly applied.

Looking at the manufacturing method of a conventional metal mask in detail, by manufacturing a metal thin plate by a rolling method and coating a photoresist on it, and then patterned through UV exposure and development, a metal mesh was manufactured by wet etching.

However, when manufacturing the metal mesh by the conventional photo etching method, various problems have occurred.

First, since the thickness of the metal thin plate is limited, for example, about 50 μm due to the limitation of rolling, there is a problem that the thickness of the metal mesh that can be produced as a result also has a limitation.

In addition, since the line width of the metal mesh can be implemented within the limits of the wet etching, there is a problem in that the line width is limited by the wet etching.

On the other hand, in the structure of the FED where the metal mesh is installed, it has a structure of metal mesh-insulator-conductive electrode (emitter electrode)-substrate, and as the temperature of the substrate increases during the vacuum packaging process, the metal mesh and the insulator are respectively It expands according to the coefficient of thermal expansion. Therefore, when the thermal expansion coefficients of the metal mesh and the insulator are different, the metal mesh may be peeled off.

Accordingly, it is an object of the present invention to provide a method of manufacturing a metal mesh for a field emission device that overcomes the thickness limitation of a metal thin plate due to rolling and the mesh line width limitation due to an etching limit.

Another object of the present invention is to provide a metal mesh that does not cause cracking or lifting when vacuum packaging the FED by applying the metal mesh.                         

Other objects and features of the present invention will be clearly understood through the preferred embodiments described below.

According to the invention, the step of applying a photoresist on the metal electrode; Exposing and developing the photoresist in accordance with the designed pattern; Performing electroforming using a plated body between the patterned photoresists; Disclosed is a method of manufacturing a metal mesh for a field emission device comprising removing a photoresist and separating a plated electroplated material from a metal electrode.

According to this configuration, it is possible to overcome the mesh line width limitation due to the thickness limitation and the etching limit of the metal thin plate due to the rolling in the metal mesh.

Preferably, an iron-nickel alloy may be used as the plated body, and in this case, the thermal expansion coefficient of the plated body may be controlled by adjusting the current density and the ion concentration ratio of iron and nickel during the electrodeposition condition.

According to this configuration, it is possible to have a thermal expansion coefficient similar to the object in contact with the metal mesh to prevent the peeling phenomenon of the metal mesh due to the difference in the thermal expansion coefficient.

Preferably, the electrodeposition condition in the step of carrying out the iron-nickel alloy is a current density of 160mA / ㎠ and the ion concentration ratio of iron and nickel may be 1: 5.

According to this configuration, the metal mesh can have a coefficient of thermal expansion similar to that of glass or ceramic.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a process chart showing a manufacturing method according to an embodiment of the present invention.

Referring to FIG. 1A, a photoresist 20 is coated on a metal electrode 10, for example, a stainless steel electrode.

Subsequently, as shown in FIG. 1B, the photoresist 20 is patterned according to the designed pattern and exposed and developed with the UV light 100.

In such a state, the plating body 30 is formed by iron-nickel alloy between the patterned photoresist 20 as shown in FIG. 1 (c).

Since the plated body 30 constituting the metal mesh to be described later is formed using the electroforming method as described above, the width and the height of the plated body 30 can be adjusted using the photoresist 20.

Therefore, it is possible to overcome the mesh line width limitation due to the thickness limitation or etching limit of the metal thin plate due to the conventional roll.

Galvanoplastic refers to a method of replicating a shape identical to the original shape by using electroplating.

Therefore, the plating material 30 is formed by electrically plating a metal material in a space formed between the surface of the metal electrode 10 and the photoresist 20.

As described above, the metal mesh for FED should have the same coefficient of thermal expansion as glass, which is the lower substrate, and the present invention uses an iron-nickel alloy for this purpose.

However, it is difficult to control the composition between two metals in the case of iron-nickel alloy poles. That is, from the standpoint of the electrode potential, nickel ions should be reduced better than iron ions, but iron-nickel has the opposite ideal alloy precipitation phenomenon. In addition, when the electrodeposition of iron becomes relatively large, the internal stress increases due to the lattice structure difference between the two metals and the film quality worsens.

In the present invention, TMA was measured by making various samples by setting the ion concentration ratio and the current density of two metals as control variables of the composition ratio.

Table 1 shows the samples according to the ion concentration ratio and the current density of iron and nickel. In addition, Figure 2 is a graph showing the TMA measurement results for the samples of [Table 1].

Iron / nickel ion concentration ratio Current density (mA / ㎠) Sample-1 1: 5 160 Sample-2 1: 1 120 Sample-3 1:10 160 Sample-4 1:10 120 Sample-5 1:10 40

As shown in FIG. 2, the electrodeposition condition is 160 mA / cm 2, and the composition of Sample-1 having an iron and nickel ion concentration ratio of 1: 5 is the most similar to that of glass or ceramic (8 × 10 ⁻⁶ ° C). ) Is showing.

Therefore, when glass or ceramic insulator is applied to the lower part of the metal mesh in the FED, peeling of the metal mesh due to the difference in thermal expansion coefficient during vacuum packaging can be prevented.

Subsequently, the plating body 30 is separated from the metal electrode 10 as shown in FIG. 1 (d) to complete the metal mesh 40.

Although the above has been described with reference to the preferred embodiments of the present invention, various changes and modifications can be made without departing from the spirit of the present invention. Therefore, the scope of the present invention should not be limited to the above embodiments, but should be determined by the claims described below.

As described above, according to the present invention, it is possible to overcome the limitation of the thickness of the metal thin plate due to the rolling and the limitation of the mesh line width due to the etching limit.

In addition, the composition of the metal mesh may have a coefficient of thermal expansion similar to that of glass to prevent the metal mesh from peeling from the glass when the FED is vacuum packaged.

Claims (5)

Applying a photoresist on the metal electrode; Exposing and developing the photoresist according to a designed pattern; Performing electroforming using a plated body between the patterned photoresists; And removing the photoresist and separating the electroplated plated material from the metal electrode. The method of claim 1, wherein the plated body comprises an iron-nickel alloy. The metal mesh for field emission device according to claim 2, wherein the thermal expansion coefficient of the plated body is controlled by controlling a current density and an ion concentration ratio of iron and nickel during electrodeposition in the step of carrying out the plating body. Way. The method of claim 3, wherein the electrodeposition condition is a current density of 160 mA / cm 2 and an ion concentration ratio of iron and nickel is 1: 5. A metal mesh for a field emission device manufactured by the method according to claim 1 or 2.

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