JPH0239156A - Resist layer for exposure with electron beam, formation thereof and pattern forming method - Google Patents
Resist layer for exposure with electron beam, formation thereof and pattern forming methodInfo
- Publication number
- JPH0239156A JPH0239156A JP19125088A JP19125088A JPH0239156A JP H0239156 A JPH0239156 A JP H0239156A JP 19125088 A JP19125088 A JP 19125088A JP 19125088 A JP19125088 A JP 19125088A JP H0239156 A JPH0239156 A JP H0239156A
- Authority
- JP
- Japan
- Prior art keywords
- resist layer
- electron beam
- resist
- layer
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 22
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229920000642 polymer Polymers 0.000 claims abstract description 13
- 125000000623 heterocyclic group Chemical group 0.000 claims abstract description 11
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 4
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 4
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000126 substance Substances 0.000 claims description 8
- 239000008151 electrolyte solution Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 10
- 239000012044 organic layer Substances 0.000 claims 1
- 230000000379 polymerizing effect Effects 0.000 claims 1
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000000644 propagated effect Effects 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- RFSKGCVUDQRZSD-UHFFFAOYSA-N 3-methoxythiophene Chemical compound COC=1C=CSC=1 RFSKGCVUDQRZSD-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 206010011732 Cyst Diseases 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- NSBGJRFJIJFMGW-UHFFFAOYSA-N trisodium;stiborate Chemical compound [Na+].[Na+].[Na+].[O-][Sb]([O-])([O-])=O NSBGJRFJIJFMGW-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔（既要〕
電子線露光用レジスト層に関し、
電子線露光の際に電荷が蓄積しない電子線露光用レジス
ト層をｆＭ供し、微細パターンを解像性よく形成するこ
とを目的とし、
一般式
（式中、Ｒはアルキル基またはメトキシ基、ＸはＮＨ，
Ｓ、 Ｏ，ＳｅまたはＴｅを示す。）で示される複素環
ポリマーと、を機物とからなる複合体で構成するや
〔産業上の利用分野〕
本発明は、電子線露光用レジスト層、電子線露光用レジ
スト層の形成方法およびパターン形成方法に関する。[Detailed Description of the Invention] [(Already required)] Regarding the resist layer for electron beam exposure, to form a fine pattern with high resolution by subjecting the resist layer for electron beam exposure in which no charge is accumulated during electron beam exposure to fM. with the general formula (wherein, R is an alkyl group or a methoxy group, X is NH,
Indicates S, O, Se or Te. ) A composite body consisting of a heterocyclic polymer represented by Regarding the forming method.
（従来の技術〕
近年の集積回路の高集積化に伴い、回路パターンはさら
に微細化する傾向にあり、レジストには高感度およびサ
ブミクロン領域のパターンが得られる高解像性が求めら
れている。これを実現するため、極短波長の電子線を用
いてパターンを形成する方法が開発されている。(Prior art) As integrated circuits become more highly integrated in recent years, circuit patterns tend to become even finer, and resists are required to have high sensitivity and high resolution to obtain patterns in the submicron region. To achieve this, a method of forming patterns using extremely short wavelength electron beams has been developed.
さらに、集積回路の段差化が進んだために生じる段差端
部でのレジスト層の切断や膜厚の不均一による解像性の
低下を防止するため、基板上に段差を平坦化する厚さ２
μｍ程度の樹脂層（下層レジスト）を設け、さらにその
上に膜厚０，２〜０．５μｍの高解像性のレジスト層（
上層レジスト）を形成して２層構造レジストとし、上層
レジストに電子線を照射してパターンを形成した後、酸
素ガスによる反応性イオンエツチング（０□−ＲＩＥ）
により下層レジストにパターンを転写する方法（２層レ
ジスト法）が採用されている。Furthermore, in order to prevent a decrease in resolution due to the cutting of the resist layer at the edge of the step and unevenness of the film thickness, which occurs due to the progress of the step difference in the integrated circuit, a thickness of 2.
A resin layer (lower resist) with a thickness of about μm is provided, and a high-resolution resist layer (with a thickness of 0.2 to 0.5 μm) is provided on top of the resin layer (lower resist).
After forming a two-layer resist (upper layer resist) and forming a pattern by irradiating the upper resist with an electron beam, reactive ion etching (0□-RIE) using oxygen gas is performed.
A method (two-layer resist method) is adopted in which a pattern is transferred to a lower resist layer.
従来、一般に下層レジストにはノボランク系フォトレジ
ストをスピンコード法により塗布したのち、熱硬化させ
ることにより平坦化材として用いている。また、上層レ
ジストには０２−ＲＩＥ耐性の高いシリコーン樹脂が使
用されている。Conventionally, a novolanque photoresist is generally applied to the lower resist layer by a spin code method, and then thermally cured to be used as a flattening material. Furthermore, a silicone resin with high resistance to 02-RIE is used for the upper resist layer.
一般に２層構造レジストの下層レジストは絶縁性樹脂で
あるため、電子線による露光を行うと樹脂内に電荷（電
子）が局所的に蓄積するチャージアップ現象が起こり、
蓄積した電荷が電子線を曲げるためにパターンの位置ず
れが生しる。この位置ずれは２層構造レジストにおいて
顕著であり、高集積化に伴う超微細パターンでは深刻な
問題である。Generally, the lower resist of a two-layer structure resist is an insulating resin, so when exposed to electron beams, a charge-up phenomenon occurs in which charges (electrons) are locally accumulated in the resin.
The accumulated charge bends the electron beam, causing pattern misalignment. This positional shift is noticeable in a two-layer resist, and is a serious problem in ultra-fine patterns associated with higher integration.
チャージアップ現象に基づくパターンの位置ずれを防止
する方法として、露光装置の電流密度を低下させて使用
する方法や、蓄積電荷の放電を待って電子線を間歇的に
照射する方法があるが、いずれの場合にも生産性が低下
するので望ましくない。There are methods to prevent pattern misalignment due to charge-up phenomenon, such as lowering the current density of the exposure equipment and irradiating the electron beam intermittently after waiting for the accumulated charge to discharge. This is also undesirable because productivity decreases.
本発明は、電子線露光の際に電荷が蓄積しない電子線露
光用レジスト層を提供し、微細パターンを解像性よく形
成することを目的とする。An object of the present invention is to provide a resist layer for electron beam exposure in which no charge is accumulated during electron beam exposure, and to form a fine pattern with good resolution.
本発明の電子線露光用レジス）ｔｆｆｌは、−形式を前
記−形式で示される複素環ポリマーを溶かした電解質溶
液に浸し、該Ｓｉ基板を陽極として電流を流すことによ
り、前記有機物と前記複素環ポリマーの電解重合を行う
ことを特徴とし、本発明のパターン形成方法は、基板上
に段差を平坦化する厚い下層レジストを設け、該下層レ
ジストの上に薄く高解像性の上層レジストを形成し、該
上層レジストに電子線を照射してパターンを形成した後
、酸素反応性エツチングにより前記下層レジストにパタ
ーンを転写して行う２層レジスト法によるパターン形成
方法において、請求項１記載の電子線露光用レジスト層
を下層レジストに用いることを特徴とし、前記目的を達
成する。The resist for electron beam exposure) tffl of the present invention is produced by immersing the -format in an electrolyte solution in which the heterocyclic polymer shown in the -format is dissolved, and by passing a current through the Si substrate as an anode, the organic substance and the heterocyclic polymer are The pattern forming method of the present invention, which is characterized by electrolytic polymerization of a polymer, includes providing a thick lower layer resist for flattening steps on a substrate, and forming a thin, high-resolution upper layer resist on the lower layer resist. 2. A pattern forming method using a two-layer resist method, in which a pattern is formed by irradiating the upper resist with an electron beam, and then the pattern is transferred to the lower resist by oxygen-reactive etching, the electron beam exposure according to claim 1. The above object is achieved by using the resist layer as the lower resist layer.
（式中、Ｒはアルキル基またはメトキシ基、ＸはＮｔｌ
、 Ｓ、 Ｏ，ＳｅまたはＴｅを示す。）で示される複
素環ポリマーと、を機動とからなる複合体であることを
特徴とし、
本発明の電子線露光用レジスト層の形成方法は、Ｓｉ基
板上に有機物の平坦化層を形成し、咳Ｓｉ基板〔作用〕
本発明の電子線露光用レジスト層は、高い導電性を存す
るので、電子線の照射により進入した電子はレジスト内
を伝わって外部に放電される。従って、チャージアップ
現象によるパターンの位置ずれが防止されて、設計通り
のパターンが形成されるようになる。(In the formula, R is an alkyl group or a methoxy group, X is Ntl
, S, O, Se or Te. ), and the method of forming a resist layer for electron beam exposure of the present invention comprises forming a flattening layer of an organic material on a Si substrate, [Operation] Since the resist layer for electron beam exposure of the present invention has high conductivity, electrons that have entered the resist layer by electron beam irradiation are transmitted through the resist and discharged to the outside. Therefore, positional deviation of the pattern due to the charge-up phenomenon is prevented, and a pattern as designed can be formed.
また、本発明の電子線露光用レジス）ＩＦＦの形成方法
では、有機物と複素環ポリマーの複合比、？Ｓ解質の濃
度、電流密度、電解時間などを調節することにより、電
子線露光用レジスト層の導電率や膜厚の制御が容易にで
きる。しかも、導電性を持たせるための重合と同時にＳ
ｉ基板上に成膜できるので、製造工程が煩雑になること
もない。さらに、複数のＳｉ基板に対して電解重合を同
時に行うことにより、大量のＳｉ基板を短時間で処理す
ることが可能であり、量産性にも適している。In addition, in the method for forming an IFF (resist for electron beam exposure) of the present invention, the composite ratio of the organic substance and the heterocyclic polymer, ? By adjusting the concentration of S solute, current density, electrolysis time, etc., the conductivity and film thickness of the resist layer for electron beam exposure can be easily controlled. Moreover, at the same time as the polymerization to provide conductivity, S
Since the film can be formed on the i-substrate, the manufacturing process does not become complicated. Furthermore, by performing electrolytic polymerization on a plurality of Si substrates simultaneously, it is possible to process a large amount of Si substrates in a short time, and this method is suitable for mass production.
本発明の電子線露光用レジスト層を２層構造レジストの
下層に用いることにより、超微細なパターンが解像性よ
く形成できる。By using the resist layer for electron beam exposure of the present invention as the lower layer of a two-layer structure resist, an ultrafine pattern can be formed with good resolution.
なお、有機物としては、Ｓｉ基板上に均一な膜を形成し
、その膜が電解質溶液に不溶であれば何でもよい。例え
ば、ポリ塩化ビニル、ポリビニルアルコール ポリメチ
ルメタクリレートがある。Note that any organic substance may be used as long as it forms a uniform film on the Si substrate and the film is insoluble in the electrolyte solution. Examples include polyvinyl chloride, polyvinyl alcohol polymethyl methacrylate.
次に本発明の実施例に係る電子線露光用レジストａの形
成方法について説明する。Next, a method for forming an electron beam exposure resist a according to an embodiment of the present invention will be described.
陽極には厚さ２μｍのポリスチレン膜を形成した４イン
チ径のＳｉ基板を用い、陰極には酸化インジウムを蒸着
したガラス基板を用いる。また、電解質溶液には、電解
質としてモル濃度で６フツ化ナトリウムアンチモン（Ｎ
ａＳｂＦ６）Ｏ，ＩＭと３−メトキシチオフェン０．０
６？ｌとをベンツ゛ニトリルに？容かしたものを用いる
。A 4-inch diameter Si substrate on which a 2 μm thick polystyrene film is formed is used as the anode, and a glass substrate on which indium oxide is vapor-deposited is used as the cathode. In addition, the electrolyte solution contains sodium antimony hexafluoride (N
aSbF6)O,IM and 3-methoxythiophene 0.0
6? l and benzonitrile? Use the one that has been preserved.
この電解質溶液を一２０°Ｃに保った状態で、前記Ｓｉ
基板とガラス基板を電解質溶液に浸し、電流密度をＯｍ
Ａ／ｃｍ”から１ ｍＡ／ｃｍ２まで３分間かけて一定
の割合で増加させた後、電流密度をＩ ｍＡ／ｃｍ２に
４分間一定に保って、ポリスチレンと３−メトキシチオ
フェンの電解重合を行った結果、導電率２ＸＩＱ−ｂＳ
／ｍを有する高分子複合体である本発明の実施例に係る
電子線露光用レジスト層がＳｉ基板上に形成された。While this electrolyte solution was kept at -20°C, the Si
The substrate and glass substrate are immersed in an electrolyte solution, and the current density is set to Om.
Electropolymerization of polystyrene and 3-methoxythiophene was carried out by increasing the current density from 1 mA/cm2 at a constant rate over 3 minutes, and then keeping the current density constant at 1 mA/cm2 for 4 minutes. As a result, conductivity 2XIQ-bS
A resist layer for electron beam exposure according to an example of the present invention, which is a polymer composite having a particle size of /m, was formed on a Si substrate.
続いて、本発明の実施例に係るパターン形成方法につい
て説明する。前記Ｓｉ基板上に形成した電子線露光用レ
ジスト層を２層構造レジストの下層レジストとして用い
る。Next, a pattern forming method according to an embodiment of the present invention will be described. The resist layer for electron beam exposure formed on the Si substrate is used as a lower layer resist of a two-layer structure resist.
前記工程に引き続き説明すると、電解槽から引き上げた
Ｓｉ基板をヘンジニトリルで洗浄してから１００°Ｃで
１時間乾燥させ、その上に上層レジストとしてシリコン
ポリマーを０．２μｍの厚さに塗布した後、８０゛Ｃで
２０分間のブリへイクを行って上層レジストを硬化させ
た。Continuing with the above process, the Si substrate taken out of the electrolytic bath was cleaned with hengenitrile, dried at 100°C for 1 hour, and a silicone polymer was applied thereon to a thickness of 0.2 μm as an upper layer resist. The upper resist layer was cured by baking at 80°C for 20 minutes.
つぎに、加速電圧２ＱｋＶで電子線露光を行って上層レ
ジストにパターンを描画した後、ＭＩＬＫ（メヂルイソ
ブチルケトン）に３０秒間浸漬して現像し、続いてＩＰ
Ａ（イソプロピルアルコール）で１０秒間リンスした。Next, a pattern was drawn on the upper resist by electron beam exposure at an accelerating voltage of 2 QkV, and then developed by immersion in MILK (methyl isobutyl ketone) for 30 seconds, followed by IP
It was rinsed with A (isopropyl alcohol) for 10 seconds.
このときの感度は１６μＣ／ｃｍ”を示し、０．５１１
ｍのラインアンドスペース（１ｉｎｅ ＆ ５ｐａｃｅ
）で解像した。また、このパターンにはチャージアンプ
による位置ずれは全く生じなかった。The sensitivity at this time was 16 μC/cm”, which was 0.511
m line and space (1ine & 5pace)
) was resolved. Moreover, no positional deviation caused by the charge amplifier occurred in this pattern.
続いて、この上層パターンをマスクにして、０２ＲＩ
Ｂにより下層レジストにパターンを転写したところ、上
層パターンに忠実に０．５μｍのラインアンドスペース
（Ｌｉｎｅ ＆ ５ｐａｃｅ ）で転写できた。Next, using this upper layer pattern as a mask, 02RI
When the pattern was transferred to the lower layer resist using B, the pattern could be faithfully transferred to the upper layer pattern with a line and space of 0.5 μm (Line & 5 pace).
このように本発明の電子線露光用レジスト層は、高い導
電性を有するため、電子線の照射により進入した電子は
レジスト内を伝わって外部に放電されるので、チャージ
アンプ現象によるパターンの位置ずれが防止される。さ
らに、２層構造レジストの下層レジストに用いることに
より、超微細なパターンが解像性よく形成できるように
なり、集積回路のさらなる微細化、高集積化に寄与する
ところが大きい。As described above, since the resist layer for electron beam exposure of the present invention has high conductivity, the electrons that enter through electron beam irradiation are transmitted through the resist and discharged to the outside, so that pattern misalignment due to the charge amplification phenomenon is avoided. is prevented. Furthermore, by using it as a lower resist of a two-layer structure resist, it becomes possible to form ultra-fine patterns with good resolution, which greatly contributes to further miniaturization and higher integration of integrated circuits.
さらに、本発明の電子線露光用レジスト層の形成方法で
は、有機物と複素環ポリマーの複合比。Furthermore, in the method for forming a resist layer for electron beam exposure of the present invention, the composite ratio of the organic substance and the heterocyclic polymer is adjusted.
電解質の濃度、電流密度、電解時間などを調節すること
により、電子線露光用レジスト層の導電率や膜ｌアの制
御が容易にでき、しかも、大量のＳｉ基板を短時間で処
理できるので、量産性にも優れている。By adjusting the electrolyte concentration, current density, electrolysis time, etc., the conductivity and film latitude of the resist layer for electron beam exposure can be easily controlled, and a large amount of Si substrates can be processed in a short time. It is also suitable for mass production.
（発明の効果）
以上、説明したように本発明の電子線露光用しシストａ
は高い導電性を有し、このため電子線露光の際のチャー
ジアップ現象によるパターンの位置ずれが防止され、設
計に忠実なパターンが形成できるようになる。さらに、
２ＷＪ構造レジストの下層レジストに用いることにより
、超微細なパターンが解像性よく形成できるようになり
、集積回路のさらなる微細化、高集積化に寄与するどこ
ろか大きい。(Effect of the invention) As explained above, the cyst a for electron beam exposure of the present invention
has high conductivity, which prevents the pattern from shifting due to a charge-up phenomenon during electron beam exposure, making it possible to form a pattern faithful to the design. moreover,
By using it as a lower layer resist of a 2WJ structure resist, it becomes possible to form an ultra-fine pattern with good resolution, which not only contributes to further miniaturization and higher integration of integrated circuits, but also makes a large contribution.
また、本発明の電子線露光用レジスト層の形成方法では
、有機物と複素環ポリマーの複合比、電解質の濃度、電
流密度、Ｍｌ解時間などを調節することにより、電子線
露光用レジスト層の導電率や膜厚の制御が容易にでき、
しかも、大量のＳｉ基板を短時間で処理できるので、量
産性にも優れている。In addition, in the method for forming a resist layer for electron beam exposure of the present invention, the conductivity of the resist layer for electron beam exposure is adjusted by adjusting the composite ratio of organic substance and heterocyclic polymer, concentration of electrolyte, current density, Ml solution time, etc. The rate and film thickness can be easily controlled.
Moreover, since a large amount of Si substrates can be processed in a short time, it is also excellent in mass productivity.
Claims (3)
Ｓ、Ｏ、ＳｅまたはＴｅを示す。）で示される複素環ポ
リマーと、有機物とからなる複合体であることを特徴と
する電子線露光用レジスト層。(1) General formula ▲ Numerical formula, chemical formula, table, etc. ▼ (In the formula, R is an alkyl group or a methoxy group, X is NH,
Indicates S, O, Se or Te. ) A resist layer for electron beam exposure, characterized in that it is a composite consisting of a heterocyclic polymer represented by () and an organic substance.
求項１記載の一般式で示される複素環ポリマーを溶かし
た電解質溶液に浸し、該Ｓｉ基板を陽極として電流を流
すことにより、前記有機物と前記複素環ポリマーの電解
重合を行うことを特徴とする電子線露光用レジスト層の
形成方法。(2) Forming an organic layer on a Si substrate, immersing the Si substrate in an electrolyte solution in which a heterocyclic polymer represented by the general formula according to claim 1 is dissolved, and applying a current using the Si substrate as an anode, A method for forming a resist layer for electron beam exposure, comprising electrolytically polymerizing the organic substance and the heterocyclic polymer.
け、該下層レジストの上に薄く高解像性の上層レジスト
を形成し、該上層レジストに電子線を照射してパターン
を形成した後、酸素反応性エッチングにより前記下層レ
ジストにパターンを転写して行う２層レジスト法による
パターン形成方法において、請求項１記載の電子線露光
用レジスト層を下層レジストに用いることを特徴とする
パターン形成方法。(3) A thick lower resist layer is provided on the substrate to flatten the steps, a thin high-resolution upper resist layer is formed on the lower resist layer, and a pattern is formed by irradiating the upper resist layer with an electron beam. , a pattern forming method using a two-layer resist method in which a pattern is transferred to the lower resist layer by oxygen-reactive etching, characterized in that the resist layer for electron beam exposure according to claim 1 is used as the lower resist layer. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19125088A JPH0239156A (en) | 1988-07-29 | 1988-07-29 | Resist layer for exposure with electron beam, formation thereof and pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19125088A JPH0239156A (en) | 1988-07-29 | 1988-07-29 | Resist layer for exposure with electron beam, formation thereof and pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0239156A true JPH0239156A (en) | 1990-02-08 |
Family
ID=16271405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19125088A Pending JPH0239156A (en) | 1988-07-29 | 1988-07-29 | Resist layer for exposure with electron beam, formation thereof and pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0239156A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05226238A (en) * | 1991-10-31 | 1993-09-03 | Internatl Business Mach Corp <Ibm> | Discharge top layer capable of being developed by base for e-beam resist use |
| WO2017188450A1 (en) * | 2016-04-28 | 2017-11-02 | 三菱瓦斯化学株式会社 | Composition for forming resist underlayer film, lithography underlayer film using same, pattern forming method, compound, and method for producing same |
| WO2017188451A1 (en) * | 2016-04-28 | 2017-11-02 | 三菱瓦斯化学株式会社 | Composition for forming resist underlayer film, underlayer film for lithography, and pattern-forming method |
| WO2020226150A1 (en) * | 2019-05-08 | 2020-11-12 | 学校法人 関西大学 | Compound and production method thereof, resin, composition, resist film, pattern forming method, underlayer film for lithography, optical component, and method for purifying compound or resin |
-
1988
- 1988-07-29 JP JP19125088A patent/JPH0239156A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05226238A (en) * | 1991-10-31 | 1993-09-03 | Internatl Business Mach Corp <Ibm> | Discharge top layer capable of being developed by base for e-beam resist use |
| WO2017188450A1 (en) * | 2016-04-28 | 2017-11-02 | 三菱瓦斯化学株式会社 | Composition for forming resist underlayer film, lithography underlayer film using same, pattern forming method, compound, and method for producing same |
| WO2017188451A1 (en) * | 2016-04-28 | 2017-11-02 | 三菱瓦斯化学株式会社 | Composition for forming resist underlayer film, underlayer film for lithography, and pattern-forming method |
| WO2020226150A1 (en) * | 2019-05-08 | 2020-11-12 | 学校法人 関西大学 | Compound and production method thereof, resin, composition, resist film, pattern forming method, underlayer film for lithography, optical component, and method for purifying compound or resin |
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