KR20060035844A - A composition of cleaning agent for semiconductor mold - Google Patents
A composition of cleaning agent for semiconductor mold Download PDFInfo
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- KR20060035844A KR20060035844A KR1020040084189A KR20040084189A KR20060035844A KR 20060035844 A KR20060035844 A KR 20060035844A KR 1020040084189 A KR1020040084189 A KR 1020040084189A KR 20040084189 A KR20040084189 A KR 20040084189A KR 20060035844 A KR20060035844 A KR 20060035844A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 239000012459 cleaning agent Substances 0.000 title abstract description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 30
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 21
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 13
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 235000019441 ethanol Nutrition 0.000 claims description 8
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 3
- 235000011149 sulphuric acid Nutrition 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 9
- 239000003960 organic solvent Substances 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002904 solvent Substances 0.000 abstract description 3
- 238000005406 washing Methods 0.000 abstract description 3
- 238000004904 shortening Methods 0.000 abstract 2
- 238000003915 air pollution Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 3
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- NEHMKBQYUWJMIP-NJFSPNSNSA-N chloro(114C)methane Chemical compound [14CH3]Cl NEHMKBQYUWJMIP-NJFSPNSNSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229940050176 methyl chloride Drugs 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- -1 until now Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3942—Inorganic per-compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C11D2111/16—
Abstract
(1)발명에 속하는 기술분야(1) Field of Technology
반도체 제조 금형에 부착된 이물질 제거용 수용성 금형 세척제Water-soluble mold cleaner to remove foreign substances attached to semiconductor manufacturing mold
(A composition of cleaning agent for semiconductor mold )(A composition of cleaning agent for semiconductor mold)
(2)발명의 목적(2) Purpose of invention
현재 반도체 금형 세척제로는 유기용제류가 주로 사용되어 지고 있으나 대기오염 발생 및 세척력이 미흡해 반도체 생산 업체에서 많은 애로를 겪고 있고, 금형 세척에 많은 비용이 소요되고 있어 이를 본 발명에서 수용성으로 대체하여 공해발생을 감소시키고, 금형 세척 공정을 단축시켜 작업 공정단축 및 부대비용을 대폭 절감할 수 있다.At present, organic solvents are mainly used as semiconductor mold cleaners, but due to air pollution generation and insufficient cleaning power, they suffer from many difficulties in semiconductor manufacturers, and costly to clean molds. By reducing the pollution and shortening the mold cleaning process, it is possible to drastically reduce the work process and additional costs.
(3)발명의 구성(3) Composition of invention
본 발명은 물(H2O) 10-80％, 초산 5-30 ％, 불화수소산 1-30 ％, 과산화수소 2-30％, 에탄올 3-30 ％, 질산 2-30％, 염산 2-10％, 황산 2-20 ％, 메탄올 2-30％, 수산화나트륨 2- 20％, 수산화칼륨 2-30％ 중량으로 이루어지는 반도체 금형을 세척하는 것으로서, 용제류를 사용한 것보다 세척력이 우수하고, 금형을 신속하게 세척할 수 있도록 하여 작업공정 단축효과, 인력비용 절감효과, 작업환경 개선효과 등을 동시에 얻을 수 있도록 하였다.The present invention is water (H2O) 10-80%, acetic acid 5-30%, hydrofluoric acid 1-30%, hydrogen peroxide 2-30%, ethanol 3-30%, nitric acid 2-30%, hydrochloric acid 2-10%, sulfuric acid Washing semiconductor mold with 2-20%, methanol 2-30%, sodium hydroxide 2-20%, potassium hydroxide 2-30% by weight, the cleaning power is superior to that used with solvents, and the mold is washed quickly It is possible to obtain the effect of shortening the work process, reducing the manpower cost, and improving the working environment.
(4)발명의 효과(4) the effect of the invention
세척력이 우수한 금형 세척제로서 반도체 제조용 금형 세척공정을 자동화 할 수 있어 작업 공정이 단축되고, 세척비용이 절감되어 생산 원가를 낮출 수 있고, 작업환경 개선 효과 등을 얻을 수 있다.As a mold cleaning agent with excellent cleaning power, it can automate the mold cleaning process for semiconductor manufacturing, which shortens the working process, reduces cleaning costs, lowers production costs, and improves working environment.
반도체 제조 금형에 부착된 이물질 제거용 수용성 금형 세척제Water-soluble mold cleaner to remove foreign substances attached to semiconductor manufacturing mold
Description
현재는 반도체 금형을 유기용제류(트리클로르에탄, 트리클로르메탄, 염화메틸 기타 열거할 수 없을 정도로 종류 다양함)를 사용하여 세척하므로 유기용제에 의한 오존층 파괴 등의 지구온난화에 지대한 영향을 주고 있고, 인간의 건강을 위협하는 물질을 함유하고 있어 큰 문제점 가지고 있음.Currently, semiconductor molds are cleaned using organic solvents (trichlorethane, trichlormethane, methyl chloride, etc., which cannot be enumerated), which greatly affects global warming such as destruction of the ozone layer by organic solvents. It has a big problem because it contains substances that threaten human health.
본 발명에서 유기용제류 보다 탁월한 효과가 있는 반도체 제조 금형에 부착된 이물질 제거용 수용성 금형 세척제를 개발함으로써 작업공정을 단축하고, 인력절감과, 생산원가 절감, 작업환경개선 효과가 있다.In the present invention, by developing a water-soluble mold cleaner for removing foreign substances attached to the semiconductor manufacturing mold having an excellent effect than the organic solvents, the work process is shortened, manpower reduction, production cost reduction, work environment improvement effect.
반도체 생산할 때 반도체 모양을 일정하도록 성형시키는 금형이 있는데 금형을 사용하다 보면 금형에 이물질이 부착하여 반도체의 모양이 변하거나, 반도체에 이물질이 부착하게 된다. 이렇게 되면 금형에서 생산된 반도체는 전기적 또는 환경에 따라 반도체의 제 기능을 발휘하지 못하게 되므로 이물질을 완벽히 제거한 후 반도체를 생산하여야 한다.When producing a semiconductor, there is a mold for forming a semiconductor shape to be constant. When using a mold, foreign matter adheres to the mold, thereby changing the shape of the semiconductor or attaching foreign matter to the semiconductor. In this case, since the semiconductor produced in the mold does not function properly according to the electrical or environmental conditions, the semiconductor must be completely removed before the semiconductor is produced.
이물질 제거할 때 현재까지는 유기용제류를 사용하거나, 사람이 직접 손으로 제거해야 하므로 작업 중에는 반도체 생산을 중단하여야만 하고, 이물질 제거가 어려워 시간이 많이 소요되고, 고무 등으로 수회에 걸쳐 닦아내어야 하기 때문에 많은 비용이 소요되고, 많은 인력과 시간이 소요됨으로써 경제적손실과 원가 상승 요인이 된다.To remove foreign substances, until now, organic solvents or humans have to remove them by hand, so the semiconductor production must be stopped during operation, and it is difficult to remove foreign substances, which takes a lot of time, and wipes with rubber etc. several times. High cost, high manpower and time, are economic loss and cost increase.
이러한 단점을 보완하여 유해한 유기용제를 전혀 사용하지 않고, 반도체 생산용 금형의 세척력을 탁월하게 향상시키면서 수용성으로 구성되어 작업이 용이하고, 작업환경개선 효과가 있는 것은 안 출 된 바 없다.Complementing these shortcomings does not use any harmful organic solvents, it is excellent in improving the washing power of the mold for semiconductor production, water-soluble, easy to work, and has not been effective to improve the working environment.
따라서 본 발명자는 현재 사용하고 있는 유기용제는 전혀 사용하지 않으면서 반도체 금형을 가장 효과적으로 세척할 수 있는 방법을 많은 실험과 테스트를 거쳐 물, 초산, 불화수소산, 과산화수소, 에탄올, 질산, 염산, 황산, 메탄올, 수산화나트륨, 수산화칼륨 등을 최적의 비율로 혼합하게 되면 각 성분들의 장점을 최대한 살릴 수 있고, 이런 효과로 반도체 금형에 부착된 이물질을 신속하고 청결하게 제거 할 수 있도록 하는 반도체 제조 금형에 부착된 이물질 제거용 수용성 금형 세척제를 제공하기 위한 것이다.Therefore, the present inventors have undergone many experiments and tests on how to clean the semiconductor mold most effectively without using any organic solvents in use at present, such as water, acetic acid, hydrofluoric acid, hydrogen peroxide, ethanol, nitric acid, hydrochloric acid, sulfuric acid, Mixing methanol, sodium hydroxide, potassium hydroxide, etc. in the optimum ratio can maximize the advantages of each component, and this effect is attached to the semiconductor manufacturing mold to quickly and cleanly remove foreign substances attached to the semiconductor mold. It is to provide a water-soluble mold cleaner for removing foreign matter.
본 발명을 구체적으로 설명하면 다음과 같다.The present invention will be described in detail as follows.
먼저 본 발명은 반도체 제조 금형 수용성 세척제 제조함에 있어 물(H2O) 10-80％, 초산(CH3COOH) 5-30 ％, 불화수소산(HF) 1-30 ％, 과산화수소(H2O2) 2-30％, 에탄올(C2H5OH) 3-30 ％, 질산(HNO3) 2-30％, 염산(HCl) 2-10％, 황산(H2SO4) 2-20 ％, 메탄올(CH3OH) 2-30％, 수산화나트륨(NaOH) 2- 20％, 수산화칼륨(KOH) 2-30％ 중량을 함유하도록 하였다.First, the present invention, in the manufacture of water-soluble cleaning agent for semiconductor manufacturing mold, water (H 2 O) 10-80%, acetic acid (CH 3 COOH) 5-30%, hydrofluoric acid (HF) 1-30%, hydrogen peroxide (H 2 O 2) 2-30%, ethanol (C2H5OH) 3-30%, nitric acid (HNO3) 2-30%, hydrochloric acid (HCl) 2-10%, sulfuric acid (H2SO4) 2-20%, methanol (CH3OH) 2-30%, sodium hydroxide (NaOH) 2 20% by weight and potassium hydroxide (KOH) 2-30% by weight.
이때 상기 중량％ 이상 함유하게 되면 냄새가 발생하고, 반도체 금형의 표면을 손상시키면서 세척 효과가 감소하게 된다.At this time, when the weight% or more is included, an odor is generated and the cleaning effect is reduced while damaging the surface of the semiconductor mold.
실시예를 아래에 설명하기로 한다.Embodiments will be described below.
실시예Example
물(H2O) 0.43ℓ, 초산(CH3COOH) 0.15ℓ, 불화수소산(HF) 0.07ℓ, 과산화수소(H2O2) 0.15ℓ, 에탄올(C2H5OH) 0.08ℓ, 질산(HNO3) 0.02ℓ, 염산(HCl) (3-6)0.02ℓ, 황산(H2SO4) 0.02ℓ, 메탄올(CH3OH) 0.02ℓ, 수산화나트륨(NaOH) 0.02ℓ, 수산화칼륨(KOH) 0.02ℓ중량을 혼합하여 수용성 금형 세척제를 조성하여 1ℓ를 만들었다0.43ℓ of water (H2O), 0.15ℓ of acetic acid (CH3COOH), 0.07ℓ of hydrofluoric acid (HF), 0.15ℓ of hydrogen peroxide (H2O2), 0.08ℓ of ethanol (C2H5OH), 0.02ℓ of nitric acid (HNO3), hydrochloric acid (HCl) (3- 6) 0.02 L, sulfuric acid (H2SO4) 0.02 L, methanol (CH3OH) 0.02 L, sodium hydroxide (NaOH) 0.02 L, potassium hydroxide (KOH) 0.02 L
비교예 1Comparative Example 1
트리클로르에탄계 용제 1ℓ를 전량으로 하여 금형세척제 1ℓ를 사용하였다.1 L of a mold washing agent was used with 1 L of trichlorethane solvent as the whole quantity.
비교예 2Comparative Example 2
트리클로르에탄계 용제 0.5ℓ와 염화메틸 0.5ℓ를 혼합하여 금형 세척제 1ℓ를 제조하였다.0.5 L of trichlorethane solvent and 0.5 L of methyl chloride were mixed to prepare 1 L of a mold cleaner.
상기 실시예 및 비교예 1, 비교예 2에 의해 제조된 각각의 반도체 금형 세척제를 스프레이 한 후, 면봉으로 닦는 방법으로 반도체 금형이 세척되는 효과를 비교실험 하여 표 1과 표 2에 표시하고, 실시예 효과 사진을 촬영하여 표시하였다.After spraying each of the semiconductor mold cleaners prepared in Examples and Comparative Examples 1 and 2, and then the effect of cleaning the semiconductor mold by the method of wiping with a cotton swab to compare the results shown in Table 1 and Table 2, Example Effect The picture was taken and displayed.
[표 1]TABLE 1
[표 2]TABLE 2
실시예 효과를 실제 사진으로 촬영하여 비교 설명하기로 한다.Example Effects will be described by comparing them with real pictures.
상기 실시예 결과 [표 1] , [표 2] 와 [사진3] 상에서 확인한 대로 본 발명 제품이 반도체를 생산하는 금형 세척에 탁월한 효과가 있는 것으로 확인 할 수 있었다.As a result of the above Examples [Table 1], [Table 2] and [Photo 3] it was confirmed that the product of the present invention has an excellent effect on the mold cleaning to produce a semiconductor.
이처럼 본 발명은 세척력이 우수한 금형 세척제로서 물 사용하여 (수용성) 만들어지기 때문에 유기용제류를 사 용할 때 나타나는 문제점을 해결함 과 동시에 작업공정을 단축하고 공정을 자동화 할 수 있어 인력낭비를 감소 시 킬 수 있으면서, 금형 세 척용 고무 의 사용을 줄일 수 있어 생산원가를 낮출 수 있고, 작업환경개선 효과도 얻을 수 있다.As described above, the present invention is made by using water (water-soluble) as a mold cleaning agent with excellent cleaning power, and solves problems that occur when using organic solvents, and at the same time, shortens the working process and automates the process, thereby reducing labor waste. In addition, the use of mold cleaning rubber can be reduced, resulting in lower production costs and improved working environment.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040084189A KR20060035844A (en) | 2004-10-20 | 2004-10-20 | A composition of cleaning agent for semiconductor mold |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| KR1020040084189A KR20060035844A (en) | 2004-10-20 | 2004-10-20 | A composition of cleaning agent for semiconductor mold |
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| KR20060035844A true KR20060035844A (en) | 2006-04-27 |
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| KR1020040084189A KR20060035844A (en) | 2004-10-20 | 2004-10-20 | A composition of cleaning agent for semiconductor mold |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101503204B1 (en) * | 2011-03-25 | 2015-03-16 | 후지필름 가부시키가이샤 | Method for removing foreign particles adhered to molds |
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2004
- 2004-10-20 KR KR1020040084189A patent/KR20060035844A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101503204B1 (en) * | 2011-03-25 | 2015-03-16 | 후지필름 가부시키가이샤 | Method for removing foreign particles adhered to molds |
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