KR20060026114A - Sputtering target material for intercept the electromagnetic wave - Google Patents
Sputtering target material for intercept the electromagnetic wave Download PDFInfo
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- KR20060026114A KR20060026114A KR1020060020353A KR20060020353A KR20060026114A KR 20060026114 A KR20060026114 A KR 20060026114A KR 1020060020353 A KR1020060020353 A KR 1020060020353A KR 20060020353 A KR20060020353 A KR 20060020353A KR 20060026114 A KR20060026114 A KR 20060026114A
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- 239000013077 target material Substances 0.000 title claims abstract description 24
- 238000005477 sputtering target Methods 0.000 title claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011572 manganese Substances 0.000 claims abstract description 15
- 230000000903 blocking effect Effects 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 8
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 abstract description 44
- 238000004544 sputter deposition Methods 0.000 abstract description 21
- 239000000463 material Substances 0.000 abstract description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 239000010406 cathode material Substances 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 37
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 19
- 229910052709 silver Inorganic materials 0.000 description 19
- 239000004332 silver Substances 0.000 description 19
- 239000010935 stainless steel Substances 0.000 description 9
- 229910001220 stainless steel Inorganic materials 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000005275 alloying Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000914 Mn alloy Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- E—FIXED CONSTRUCTIONS
- E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
- E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
- E06B9/00—Screening or protective devices for wall or similar openings, with or without operating or securing mechanisms; Closures of similar construction
- E06B9/24—Screens or other constructions affording protection against light, especially against sunshine; Similar screens for privacy or appearance; Slat blinds
- E06B9/40—Roller blinds
- E06B9/42—Parts or details of roller blinds, e.g. suspension devices, blind boxes
- E06B9/50—Bearings specially adapted therefor
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES E05D AND E05F, RELATING TO CONSTRUCTION ELEMENTS, ELECTRIC CONTROL, POWER SUPPLY, POWER SIGNAL OR TRANSMISSION, USER INTERFACES, MOUNTING OR COUPLING, DETAILS, ACCESSORIES, AUXILIARY OPERATIONS NOT OTHERWISE PROVIDED FOR, APPLICATION THEREOF
- E05Y2201/00—Constructional elements; Accessories therefor
- E05Y2201/60—Suspension or transmission members; Accessories therefor
- E05Y2201/622—Suspension or transmission members elements
- E05Y2201/628—Bearings
- E05Y2201/636—Universal or ball joints
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- Architecture (AREA)
- Civil Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
본 발명은 플라스틱이나 금속의 표면에 전자파를 차단하기 위한 도금층을 형성하는 스퍼터링(Sputtering)용 타겟재료에 관한 것이다.The present invention relates to a sputtering target material for forming a plating layer for blocking electromagnetic waves on the surface of plastic or metal.
어떠한 도금할 소재(4)에 스퍼터링에 의한 방법으로 도금을 하는 경우는 음극,양극 두 전극간에 방전을 행하는 것으로, 음극으로부터 음극물질이 튀어나와서 양극인 도금할 소재(4)에 부착되어 도금되는 것으로서, 본 발명은 스퍼터링에 있어서 양극측의 도금할 소재(4)가 아니라 음극측의 음극물질이 방출되는 타겟재료(1)의 구성에 대한 것이다.When the plating of any material 4 to be plated by sputtering, discharge is performed between the cathode and the anode, and the cathode material is protruded from the cathode and attached to the material 4 to be plated as the anode. The present invention relates to the configuration of the target material 1 in which the cathode material on the cathode side is released, not the material 4 to be plated on the anode side in sputtering.
본 발명의 전자파 차단을 위한 스퍼터링용 타겟재료(1)는 구리(Cu), 니켈(Ni), 아연(Zn), 알루미늄(Al) 및 망간(Mn) 등의 금속을 용융,혼합하여 구성된 합금이다.Sputtering target material 1 for electromagnetic wave blocking of the present invention is an alloy formed by melting and mixing metals such as copper (Cu), nickel (Ni), zinc (Zn), aluminum (Al), and manganese (Mn). .
본 발명의 합금으로 제조된 타겟재료(1)를 스퍼터링으로 휴대폰 케이스(3)나 각종 전자부품(5)을 도금하면 휴대폰이나 전자부품에서 발생되는 전자파를 효과적으로 차단할 수 있는 것이다.When the target material 1 made of the alloy of the present invention is plated with the mobile phone case 3 or various electronic parts 5 by sputtering, electromagnetic waves generated from the mobile phone or the electronic parts can be effectively blocked.
본 발명은 구리(Cu) 50~70중량%, 니켈(Ni) 5~25중량%, 아연(Zn) 5~25중량%, 알루미늄(Al) 5~20중량%, 망간(Mn) 5중량%이하 및 기타 불가피한 불순물로 구성된다.The present invention is 50 to 70% by weight of copper (Cu), 5 to 25% by weight of nickel (Ni), 5 to 25% by weight of zinc (Zn), 5 to 20% by weight of aluminum (Al), 5% by weight of manganese (Mn) It consists of the following and other unavoidable impurities.
타켓, 스퍼터링, 전자파, 도금 Target, Sputtering, Electromagnetic Wave, Plating
Description
도 1은 타겟재료를 대상물 표면에 스퍼터링(Sputtering)으로 도금하는 상태를 나타낸 도면.1 is a view showing a state in which a target material is plated on a surface of an object by sputtering.
도 1은 본 발명의 타겟재료로 휴대폰 케이스의 표면에 도금층을 형성한 단면도.1 is a cross-sectional view of the plating layer formed on the surface of the mobile phone case of the target material of the present invention.
도 2는 본 발명의 타겟재료로 각종 전자부품의 표면에 도금층을 형성한 단면도.2 is a cross-sectional view of the plating layer formed on the surface of the various electronic components with the target material of the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
1 : 타겟재료1: Target Material
2 : 도금층2: plating layer
3 : 휴대폰 케이스3: cell phone case
4 : 소재4: material
5 : 전자부품5: electronic components
본 발명은 구리(Cu), 니켈(Ni), 아연(Zn), 알루미늄(Al) 및 망간(Zn) 등의 금속을 합금하여 구성된 전자파차단을 위한 스퍼터링(Sputtering)용 타겟(Target)재료에 관한 것이다.The present invention relates to a sputtering target material for shielding electromagnetic waves formed by alloying metals such as copper (Cu), nickel (Ni), zinc (Zn), aluminum (Al), and manganese (Zn). will be.
각종 전자기기, 정보통신기기 및 산업의료기기에서 발생되는 전자파는 각 기기 상호간에 오작동을 유발하는 원인이 되기도 하고, 인체에 대단한 악영향을 끼치고 있는 것으로 알려지고 있다.Electromagnetic waves generated by various electronic devices, information and communication devices, and industrial medical devices cause malfunctions between the devices, and are known to have a great adverse effect on the human body.
이러한 전자기기, 정보통신기기에서 발생되는 전자파를 차단하기 위하여 전자제품의 부품이나 그 케이스에 각종 금속분말 및 금속합금 분말로 만든 EMI(electromagnetic interference,전자파장애)차폐도료를 도포하거나, 진공챔버를 이용하여 증착 및 스퍼터링으로 전자제품의 부품이나 케이스에 도전성이 우수한 금속성 도금층을 형성하여 전자파를 차단하였다. 일반적으로 도전성이 우수하면 전자파 차단효율이 우수하다.In order to block electromagnetic waves generated from such electronic devices and information and communication devices, EMI (electromagnetic interference) shielding coating made of various metal powders and metal alloy powders is applied to components or cases of electronic products, or vacuum chambers are used. Therefore, the electromagnetic wave was blocked by forming a metallic plating layer having excellent conductivity on parts or cases of electronic products by deposition and sputtering. In general, if the conductivity is excellent, the electromagnetic wave blocking efficiency is excellent.
상기와 같은 방법은 EMI차폐도료, 증착 및 스퍼터링에 사용되는 주된 금속으로 은(Ag)을 사용하는데, 은(Ag)은 도전성과 내식성(耐蝕性)이 우수하지만 고가의 소재이기 때문에 소정의 두께 이상으로 도금층을 형성하기에는 경제성이 떨어지는 문제점이 있었다. The above method uses silver (Ag) as the main metal used for EMI shielding paint, deposition, and sputtering. Since silver (Ag) has excellent conductivity and corrosion resistance, but is an expensive material, it has a predetermined thickness or more. In order to form a plating layer, there was a problem in that the economy was inferior.
전자파차단을 위해서는 일정한 두께 이상의 도금층이 형성되어야만 하는데, 고가의 소재인 은(Ag)의 사용량을 최소화하기 위하여, 얇은 은(Ag) 도금층을 형성 하고, 비교적 도전성이 우수한 구리(Cu)와 경도와 내식성이 우수한 스텐레스스틸(Sus)을 은(Ag)도금층에 연속 도금함으로써 여러 층으로 형성된 도금층을 구성하였다.In order to block electromagnetic waves, a plating layer of a certain thickness or more must be formed. In order to minimize the use of expensive silver (Ag), a thin silver (Ag) plating layer is formed, and copper (Cu) having excellent conductivity and hardness and corrosion resistance The excellent stainless steel Su was continuously plated on the silver (Ag) plating layer to form a plating layer formed of several layers.
상기와 같이 은(Ag), 구리(Cu) 및 스텐레스스틸(Sus)을 각각 별도의 공정으로 소재에 도금하는 방법은 공정이 매우 복잡하여 생산비가 많이 들고, 생산효율이 떨어지며, 특히 고가의 소재인 은(Ag)을 사용하기 때문에 경제성이 떨어지는 문제점이 있었다.As described above, the method of plating silver (Ag), copper (Cu) and stainless steel (Sus) on separate materials is a very complicated process, resulting in high production costs, low production efficiency, and especially expensive materials. Since silver (Ag) was used, there was a problem of low economic feasibility.
본 발명은 상기의 문제점을 해결하기 위하여 고가의 소재인 은(Ag) 대신에 도전성이 우수한 구리(Cu)를 주성분으로 하고, 구리가 부식되는 것을 방지하고 도금층 표면의 광택과 경도가 우수하도록 니켈(Ni), 아연(Zn), 알루미늄(Al) 및 망간(Mn)등의 금속을 소정 비율로 합금하여서 스퍼터링(Sputtering)용 타겟재료를 구성함으로써, 본 발명의 타겟재료로 단 한두번의 스퍼터링 공정만으로도 소재에 전자파 차단이 우수하고, 표면 경도가 우수하며, 광택이 우수한 도금층을 형성할 수 있는 스퍼터링용 타겟재료를 제공하는 것이 본 발명의 목적이다.In order to solve the above problems, the main component is copper (Cu) having excellent conductivity instead of silver (Ag), which is an expensive material, to prevent copper from corrosion and to improve the gloss and hardness of the surface of the coating layer. By sputtering the target material by alloying a metal such as Ni), zinc (Zn), aluminum (Al) and manganese (Mn) at a predetermined ratio, the target material of the present invention can be used only once or twice. It is an object of the present invention to provide a sputtering target material capable of forming a plating layer having excellent electromagnetic shielding, excellent surface hardness, and excellent gloss.
상기의 목적을 달성하기 위하여 본 발명의 스퍼터펑(Sputtering)용 타겟재료는 구리(Cu) 50~70중량%, 니켈(Ni) 5~25중량%, 아연(Zn) 5~25중량%, 알루미늄(Al) 5~20중량%, 망간(Mn) 5중량%이하 및 기타 불가피한 불순물로 구성된다.In order to achieve the above object, the target material for sputtering of the present invention is 50 to 70% by weight of copper (Cu), 5 to 25% by weight of nickel (Ni), 5 to 25% by weight of zinc (Zn), aluminum (Al) 5-20% by weight, manganese (Mn) 5% by weight or less and other unavoidable impurities.
본 발명은 플라스틱이나 금속의 표면에 전자파를 차단하기 위한 도금층을 형성하는 스퍼터링(Sputtering)용 타겟재료에 관한 것이다.The present invention relates to a sputtering target material for forming a plating layer for blocking electromagnetic waves on the surface of plastic or metal.
어떠한 도금할 소재(4)에 스퍼터링에 의한 방법으로 도금을 하는 경우는 음극,양극 두 전극간에 방전을 행하는 것으로, 도 1에서와 같이 음극으로부터 음극물질이 튀어나와서 양극인 도금할 소재(4)에 부착되어 도금되는 것으로서 본 발명은 스퍼터링에 있어서 양극측의 도금할 소재(4)가 아니라 음극측의 음극물질이 방출되는 타겟재료(1)의 구성에 대한 것이다.In the case of plating the
본 발명은 상기 스퍼터링 방법의 타겟재료에 관한 것으로서 구리(Cu) 50~70중량%, 니켈(Ni) 5~25중량%, 아연(Zn) 5~25중량%, 알루미늄(Al) 5~20중량%, 망간(Mn) 5중량%이하를 용융,혼합하고 압연공정을 통해 판(板)형태로 제조한다. The present invention relates to a target material of the sputtering method, 50 to 70% by weight of copper (Cu), 5 to 25% by weight of nickel (Ni), 5 to 25% by weight of zinc (Zn), and 5 to 20% by weight of aluminum (Al). %, Manganese (Mn) 5% by weight or less is melted and mixed, and manufactured in the form of a plate through a rolling process.
이러한 용융,혼합 및 압연공정은 여러 금속을 혼합하여서 새로운 금속을 만드는 합금공정의 대표적인 공정들이므로 자세한 설명은 생략한다.Since the melting, mixing and rolling processes are typical processes of the alloying process of mixing a plurality of metals to form a new metal, detailed description thereof will be omitted.
상기와 같이 구성된 본 발명의 스퍼터링용 타켓재료(1)를 이용하여 도 2에서와 같이 휴대폰 케이스(3)에 도금층(4)을 형성하면, 휴대폰에서 발생되는 인체에 유해한 전자파가 차단된다.When the
또한, 도 3에서와 같이 전자부품(5)에 도금층(2)을 형성하면 전자부품(5)에서 발산되는 전자파를 차단하여서 밀집된 전자부품(5)간에 오작동이 발생되는 것을 방지할 수 있다.In addition, when the
이하 본 발명에 의한 스퍼터링용 타겟재료(1)를 이용하여 형성된 도금층(2) 과 종래의 도금층(2)의 전자파차단, 접착강도, 광택도 및 색상을 비교하면 다음의 표 1과 같다.Hereinafter, the electromagnetic wave blocking, adhesive strength, glossiness, and color of the
1. 실험조건1. Experimental conditions
가.실험장비: (주)예인하이텍 YISIP-1500 (진공증착과 스퍼터링가능)A. Experimental equipment: Yein Hitech Co., Ltd. YISIP-1500 (vacuum deposition and sputtering possible)
나.챔버내 진공도: 2.8×10-5 torrB. Vacuum degree in chamber: 2.8 × 10 -5 torr
다.스퍼터링시 아르곤(Ar) 가스량: 190 sccmArgon (Ar) gas volume during sputtering: 190 sccm
라.인가전력: 6 kWD. Power applied: 6 kW
2. 도금소재에 하도도료(소재표면과 도금층의 접착강도를 증대시키기 위한 도료)를 스프레이코팅 후 70℃의 온도에서 30분 건조 후, 증착 또는 스퍼터링 실시.2. Spray coating on the plating material (paint to increase the adhesion strength between the material surface and the plating layer), and after drying for 30 minutes at a temperature of 70 ℃, deposition or sputtering.
표 1. 종래의 도금층과 본 발명을 이용한 도금층의 비교Table 1. Comparison of conventional plating layer and plating layer using the present invention
상기 표 1은 종래의 전자파차단을 위한 도금층(2) 4가지와 본 발명에 의한 타겟재료(1)를 1,2회 도금한 도금층(2)을 비교한 것이다.Table 1 compares four
표 1에서와 같이 스텐레스스틸(Sus)을 1회 도금한 도금층은 저항값이 23Ω으로 전자파차단율이 좋지 못하고, 광택도가 불량이다.As shown in Table 1, the plated layer obtained by plating stainless steel (Sus) once has a resistance value of 23Ω, which is poor in terms of electromagnetic wave blocking rate, and is poor in glossiness.
구리(Cu)와 스텐레스스틸(Sus)로 2회 도금한 도금층은 저항값이 0.5Ω으로 전자파차단율은 좋으나, 접착강도와 광택도가 보통이다.The plated layer plated with copper (Cu) and stainless steel (Sus) twice has a good resistance to electromagnetic wave with a resistance value of 0.5Ω, but has good adhesive strength and gloss.
스테인레스스틸(Sus), 구리(Cu), 또다시 스테인레스스틸(Sus)로 3회 도금한 도금층은 저항값이 0.4Ω으로 전자파차단율과 접착강도가 우수하고, 광택도도 비교적 우수하다.The plated layer plated with stainless steel (Sus), copper (Cu), and again stainless steel (Sus) three times has a resistance value of 0.4Ω, and has excellent electromagnetic wave blocking rate, adhesive strength, and glossiness.
스테인레스스틸(Sus), 구리(Cu), 은(Ag) 또다시 스테인레스스틸(Sus)로 4회 도금한 도금층은 저항값이 0.3Ω으로 전자파차단율과 접착강도가 우수하고, 광택도도 비교적 우수하다.The plated layer plated with stainless steel (Sus), copper (Cu), silver (Ag) and stainless steel (Sus) four times has a resistance value of 0.3Ω, which is excellent in electromagnetic wave blocking rate and adhesive strength, and has excellent gloss. .
상기와 같은 종래의 도금층에 비해 표 1에서와 같이 본 발명에 의한 스퍼터링용 타겟을 이용하여 1회 도금한 도금층은 저항값이 3.2Ω으로 전자파차단율과 접착강도가 비교적 우수하고, 광택도는 보통이다.Compared with the conventional plating layer as described above, the plating layer plated once using the sputtering target according to the present invention as shown in Table 1 has a resistance value of 3.2 Ω, which is relatively excellent in electromagnetic wave blocking rate and adhesive strength, and has a glossiness. .
본 발명에 의한 스퍼터링용 타겟을 이용하여 2회 도금한 도금층은 저항값이 0.5Ω으로 우수하고, 접착강도와 광택도도 매우 우수하다.The plated layer plated twice using the sputtering target according to the present invention has an excellent resistance value of 0.5?, And also has excellent adhesion strength and gloss.
즉, 종래의 전자파차단 도금층(2)은 스테인레스스틸(Sus), 구리(Cu) 및 은(Ag)을 진공증착이나 스퍼터링등 여러공정을 통해 여러 번 도금해야하지만, 본 발명에 의한 스퍼터링용 타겟재료(1)를 이용하여 스퍼터링공정만으로 1~2회정도 도금 하면 전자파차단율과 접착강도 및 광택도가 우수한 도금층(2)을 형성할 수 있는 것이다.That is, the conventional electromagnetic wave
결국 본 발명의 기술적 핵심은 구리(Cu) 50~70중량%, 니켈(Ni) 5~25중량%, 아연(Zn) 5~25중량%, 알루미늄(Al) 5~20중량%, 망간(Mn) 5중량%이하 및 기타 불가피한 불순물로 구성되는 전자파 차단을 위한 스퍼터링용 타겟재료이다.After all, the technical core of the present invention is 50 to 70% by weight of copper (Cu), 5 to 25% by weight of nickel (Ni), 5 to 25% by weight of zinc (Zn), 5 to 20% by weight of aluminum (Al), manganese (Mn) ) Sputtering target material for electromagnetic wave blocking which is composed of 5 wt% or less and other unavoidable impurities.
이상에서 살펴본 바와 같이 본 발명에 의한 스퍼터링용 타겟재료(1)를 이용하면 전자파차단을 위해 고가의 은(Ag)을 사용할 필요없이 소재(4)의 표면에 단 한 두번의 스퍼터링으로 전자파차단이 우수한 도금층(2)을 형성할 수 있고, 도금층(2)은 소재(4)와의 접착강도가 매우 우수하고, 표면이 밝은은미색으로 미려한 광택이 생성되는 것으로 생산비가 적게 들고 전자파차단성능이 우수한 도금층(2)을 형성할 수 있는 매우 유용한 발명이다.As described above, when the target material for sputtering 1 according to the present invention is used, electromagnetic shielding is excellent by only one or two sputtering on the surface of the
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| KR1020060020353A KR20060026114A (en) | 2006-03-03 | 2006-03-03 | Sputtering target material for intercept the electromagnetic wave |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018097488A1 (en) * | 2016-11-25 | 2018-05-31 | 주식회사 셀코스 | Method for plating to express champagne gold color |
| WO2019117384A1 (en) * | 2017-12-14 | 2019-06-20 | 엘티메탈 주식회사 | Sputtering target for electromagnetic shielding, and method for producing same |
| KR20220081810A (en) | 2020-12-09 | 2022-06-16 | 주식회사 에스비이엔지 | Suttering target and method for preparation thereof |
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2006
- 2006-03-03 KR KR1020060020353A patent/KR20060026114A/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018097488A1 (en) * | 2016-11-25 | 2018-05-31 | 주식회사 셀코스 | Method for plating to express champagne gold color |
| WO2019117384A1 (en) * | 2017-12-14 | 2019-06-20 | 엘티메탈 주식회사 | Sputtering target for electromagnetic shielding, and method for producing same |
| KR20220081810A (en) | 2020-12-09 | 2022-06-16 | 주식회사 에스비이엔지 | Suttering target and method for preparation thereof |
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