KR20060018582A - High voltage detecting circuit and high voltage pumping device by that - Google Patents

Abstract

The present invention provides a high voltage distribution unit configured to divide a high voltage signal by a plurality of resistance elements and output a high voltage distribution signal, but in the active mode, only a portion of the plurality of resistance elements are selected between the high voltage applying terminal and the ground terminal to form a current path; A high voltage sensing circuit and a high voltage pumping apparatus using the same include a comparator configured to receive the high voltage distribution signal and perform comparison amplification with a predetermined reference voltage to generate a high voltage enable signal.

High voltage sensing circuit, high voltage pumping device

Description

High Voltage Detecting Circuit and High Voltage Pumping Device by that}             

1 is a block diagram showing a general high voltage pumping apparatus.

2 illustrates a configuration of a high voltage sensing circuit according to the prior art.

FIG. 3A illustrates a change of the high voltage distribution signal pmpactv according to the change of the high voltage Vpp when the values of Rup and Rdn are large in the conventional high voltage sensing circuit of FIG. 2.

3B illustrates a change of the high voltage distribution signal pmpactv according to the change of the high voltage Vpp when the values of Rup and Rdn are small in the conventional high voltage sensing circuit of FIG. 2.

3c illustrates the degree of high voltage pumping with time when the values of Rup and Rdn in the conventional high voltage sensing circuit of FIG. 2 are large.

FIG. 3d illustrates the degree of high voltage pumping with time when the values of Rup and Rdn are small in the conventional high voltage sensing circuit of FIG. 2.

4 illustrates a configuration of a high voltage sensing circuit according to the first embodiment of the present invention.

5 shows a configuration of a high voltage sensing circuit according to a second embodiment of the present invention.

Figure 6 shows the configuration of a high voltage pumping apparatus according to an embodiment of the present invention.

FIG. 7 illustrates a change in the high voltage distribution signal pmpactv and the high voltage enable signal vpp_en in the active mode and the inactive mode in the high voltage sensing circuit according to an embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100: high voltage detection circuit

200: oscillator 300: pump control unit

400: high voltage pump

The present invention relates to a high voltage sensing circuit and a high voltage pumping device using the same. More particularly, the present invention relates to a fast high voltage pumping operation in an active mode, and to reduce current consumption between a high voltage applying terminal and a ground terminal in an inactive mode. It relates to a high voltage sensing circuit and a high voltage pumping device using the same.

Generally, a DRAM is a random access memory that can write or read data to a memory cell composed of one transistor and one capacitor. However, since the DRAM uses NMOS as a transistor constituting the memory cell, the word which generates the potential of the external power supply voltage Vdd + threshold voltage Vt + V in consideration of the voltage loss caused by the threshold voltage Vt. It includes a line driving voltage pumping device.

In other words, in order to turn on the NMOS, which is mainly used for DRAM memory cells, a voltage higher than the threshold voltage (Vt) than the source voltage should be applied to the gate. Generally, since the maximum voltage applied to the DRAM is at the Vdd level, a complete Vdd is required. In order to read the voltage of the level from the cell or the bit line or to write to the cell or the bit line, a boost voltage of Vdd + Vt or more must be applied to the gate of the NMOS. Therefore, in order to drive the word line of the DRAM device, a voltage pumping device for generating the high voltage Vpp, which is the boosted voltage, is required.

1 is a block diagram showing a general high voltage pumping apparatus.

The high voltage pumping device detects the high voltage (Vpp) level fed back from the high voltage pump unit 400 and generates a high voltage enable signal vpp_en, and in response to the high voltage enable signal vpp_en. An oscillator 200 for generating a predetermined pulse signal osc1, a pump control unit 300 for outputting a pump driving control signal in accordance with a pulse signal osc1 applied from the oscillator 200, and the pump driving control signal The high voltage pump unit 400 pumps a high voltage Vpp at a predetermined level.

The high voltage pumping device having such a configuration generates a high voltage (Vpp). That is, first, when the high voltage detection circuit unit 100 detects the high voltage (Vpp) level fed back from the high voltage pump unit 400 to generate the high voltage enable signal vpp_en, the oscillator 200 may generate the high voltage enable signal. In response to vpp_en, a predetermined pulse signal osc1 is generated. The pump control unit 300 outputs the pump driving control signals g1 and g2 according to the pulse signal osc1 applied from the oscillator 200. Subsequently, the high voltage pump unit 400 performs a pumping operation according to the pump driving control signals g1 and g2 to output a high voltage Vpp.

Here, the configuration and operation of the conventional high voltage sensing circuit unit will be described with reference to FIG. 2. As shown in the drawing, the conventional high voltage sensing circuit unit includes a high voltage distribution unit 110 for distributing a high voltage signal Vpp and outputting a high voltage distribution signal pmpactv to the node X; The comparator 120 receives the high voltage distribution signal pmpactv and compares and amplifies a predetermined reference voltage Vrefc to generate a high voltage enable signal vpp-en. The high voltage divider 110 includes a resistor Rup and a resistor Rdn for distributing the high voltage signal Vpp.

Referring to the operation, the high voltage divider 110 divides the high voltage signal Vpp by the resistor Rup and the resistor Rdn and outputs the high voltage signal Vpmpactv. Therefore, if the resistance values of the resistor Rup and the resistor Rdn are the same, the high voltage distribution signal pmpactv corresponding to 1 / 2Vpp is output to the node X.

Subsequently, the comparator 120 compares and amplifies the high voltage distribution signal pmpactv applied to the gate of the NMOS N1 with the reference voltage Vrefc applied to the gate of the NMOS N2 to enable high or low level high voltage. Generate the signal vpp-en.

Specifically, as a result of comparing the high voltage distribution signal pmpactv and the reference voltage Vrefc, if the high voltage distribution signal pmpactv is lower than the reference voltage Vrefc, the NMOS N2 is turned on and the node Z is turned on. ) Becomes the low level. Then, the PMOS P1 is turned on by receiving a low level signal from the node Z as a gate, and the node Y is pulled up to a high level. Therefore, when the high voltage distribution signal pmpactv is lower than the reference voltage Vrefc, the high voltage enable signal vpp_en is output at a high level to perform a high voltage pumping operation.

On the other hand, as a result of comparison, if the high voltage distribution signal pmpactv is higher than the reference voltage Vrefc, the NMOS N1 is turned on and the node Y is pulled down to the low level. Therefore, when the high voltage distribution signal pmpactv is lower than the reference voltage Vrefc, the high voltage enable signal vpp_en is output at a low level so that the high voltage pumping operation is not performed.

However, the conventional high voltage sensing circuit has a problem in that the high voltage pumping operation is delayed or the standby current or the self refresh current is increased in the inactive mode according to the size of the high voltage decomposition resistors Rup and Rdn, thereby increasing the current consumption.

That is, when the resistors Rup and Rdn are large, the influence of the parasitic capacitors present in the resistors greatly affects the high voltage distribution signal pmpactv and delays the operation of the high voltage distribution Vpp. As a result, the high voltage enable signal vpp_en is also enabled or disabled for an undesired time, preventing the high voltage pumping operation from being performed quickly and accurately. As a result, the high voltage Vpp pumped by the high voltage pump unit 400 does not maintain the target level at a constant level and fluctuates greatly.

On the other hand, when the resistances Rup and Rdn are small, the influence of the parasitic capacitor is reduced, so that the phenomenon in which the high voltage Vpp is greatly changed as described above can be prevented. However, in this case, the current (Idiv) increases as the resistance value between the high voltage terminal (Vpp) and the ground terminal (Vss) decreases, so that values such as standby current or self refresh current in the inactive mode increase. There was a problem that the margin with the prescribed value specified in.) Is reduced.

Referring to FIGS. 3A and 3B, when the values of Rup and Rdn are large in the conventional high voltage detection circuit, the high voltage distribution signal pmpactv fluctuates as the high voltage Vpp changes, and when the values of Rup and Rdn are small. It can be seen that the high voltage distribution signal pmpactv is sensitively changed according to the change of the high voltage Vpp.

3C and 3D, when the values of Rup and Rdn are large, the high voltage distribution signal pmpactv fluctuates indefinitely, and the high voltage pumping time is excessive. When the values of Rup and Rdn are small, the high voltage distribution signal ( pmpactv) reacts sensitively and shows high voltage pumping time.

Therefore, the technical problem to be achieved in the present invention is to enable fast high voltage pumping operation in the active mode and to reduce unnecessary current consumption due to high voltage pumping by reducing the current consumption between the high voltage applying terminal and the ground terminal in the inactive mode. The present invention provides a high voltage sensing circuit and a high voltage pumping device using the same.

In order to achieve the above technical problem, the present invention divides a high voltage signal by a plurality of resistance elements and outputs a high voltage distribution signal. However, in the active mode, only a part of the plurality of resistance elements are selected between the high voltage applying terminal and the ground terminal to generate a current path. A high voltage distribution section configured to form; The present invention provides a high voltage sensing circuit including a comparator configured to receive the high voltage distribution signal and perform comparative amplification with a predetermined reference voltage to generate a high voltage enable signal.

In addition, the present invention includes a high voltage detection circuit for detecting a high voltage signal to be fed back to generate a high voltage enable signal; An oscillator for generating a predetermined pulse signal in response to the high voltage enable signal; A pump controller which outputs a pump driving control signal according to the pulse signal applied from the oscillator; It comprises a high voltage pump unit for pumping the high voltage signal in accordance with the pump drive control signal,

The high voltage detection circuit unit divides the high voltage signal by a plurality of resistor elements and outputs a high voltage distribution signal. In the active mode, only a part of the plurality of resistors is selected between the high voltage applying terminal and the ground terminal to form a current path. Allocation; A high voltage pumping device including a comparator configured to receive the high voltage distribution signal and compare and amplify a predetermined reference voltage to output the high voltage enable signal.

In the present invention, the high voltage distribution unit may include the plurality of resistance elements including first to fourth resistors connected in series between the high voltage applying terminal and the ground terminal.

In an embodiment of the present invention, the high voltage divider may include a first switch device installed between a first node between the first resistor and a second resistor and the high voltage applying terminal and turned on in an active mode, and between the third resistor and the fourth resistor. It is preferable to include a second switch device installed between the second node and the ground terminal is turned on in the active mode.

In the present invention, it is preferable that the first switch element is a PMOS element, and the second switch element is an NMOS element.

In the present invention, the comparing unit comprises: a first pull-up element connected between the power supply voltage applying stage and the third node; A second pull-up element connected between the power supply voltage applying stage and a fourth node; A first pull-down device connected between the third node and a ground terminal and receiving the high voltage distribution signal through a gate; And a second pull-down device connected between the fourth node and the ground terminal and receiving the reference voltage through a gate.

The present invention also provides a first divider for dividing a high voltage signal by a first resistor element group and outputting the same; a second divider for dividing and output a high voltage signal by a second resistor element group; A high voltage divider including a selector to enable a first divider and to enable a second divider to output a high voltage divider signal in an inactive mode; The present invention provides a high voltage sensing circuit including a comparator configured to receive the high voltage distribution signal and perform comparative amplification with a predetermined reference voltage to generate a high voltage enable signal.

Furthermore, the present invention includes a high voltage sensing circuit unit for detecting a high voltage signal fed back to generate a high voltage enable signal; An oscillator for generating a predetermined pulse signal in response to the high voltage enable signal; A pump controller which outputs a pump driving control signal according to the pulse signal applied from the oscillator; It comprises a high voltage pump unit for pumping the high voltage signal in accordance with the pump drive control signal,

The high voltage sensing circuit unit divides the high voltage signal by a first resistor element group and outputs the first divider, and a second divider which divides and outputs the high voltage signal by a second resistor element group. A high voltage divider including a selector which enables the first divider and enables the second divider to output a high voltage divider signal in an inactive mode; A high voltage pumping device including a comparator configured to receive the high voltage distribution signal and compare and amplify a predetermined reference voltage to output the high voltage enable signal.

In the present invention, it is preferable that the synthetic resistance value of the first resistance element group is smaller than the synthetic resistance value of the second resistance element group.

In the present invention, it is preferable that the first resistor element group and the second resistor element group include a plurality of resistors connected in series.

In an embodiment, the selector may include a first gate turned on in an active mode to enable the first distribution part and a second gate turned on in an inactive mode to enable the second distribution part. desirable.

In the present invention, the comparing unit comprises: a first pull-up element connected between the power supply voltage applying stage and the first node; A second pull-up element connected between the power supply voltage applying stage and a second node; A first pull-down device connected between the first node and a ground terminal and receiving the high voltage distribution signal through a gate; And a second pull-down device connected between the second node and the ground terminal and receiving the reference voltage through a gate.

Hereinafter, the present invention will be described in more detail with reference to Examples. These examples are only for illustrating the present invention, and the scope of protection of the present invention is not limited by these examples. The same elements as those of the prior art examples among the elements shown in the following embodiments use the same symbols.

4 illustrates a configuration of a high voltage sensing circuit according to the first embodiment of the present invention.

As shown in FIG. 4, the high voltage sensing circuit according to the first embodiment divides a high voltage Vpp signal by a plurality of resistors R1, Rup, Rdn, and R2 to output a high voltage distribution signal pmpactv. A high voltage distribution unit 410 configured to form a current path by selecting only a part of the plurality of resistors R1, Rup, Rdn, and R2 between the high voltage applying terminal Vpp and the ground terminal Vss in the active mode; The comparator 420 is configured to receive the high voltage distribution signal pmpactv and perform comparative amplification with a predetermined reference voltage Vrefc to generate a high voltage enable signal vpp_en.

The high voltage divider 410 is installed between the first node A between the first resistor R1 and the second resistor Rup and the high voltage applying terminal Vpp to be turned on in the active mode. And an NMOS N4 disposed between the second node B between the third resistor Rdn and the fourth resistor R2 and the ground terminal Vss and turned on in the active mode.

The comparison unit 420 includes a PMOS P1 connected between a power supply voltage applying terminal Vdd and a third node C; A PMOS P2 connected between the power supply voltage applying terminal Vdd and a fourth node D; An NMOS N1 connected between a third node C and a ground terminal Vss and receiving the high voltage distribution signal pmpactv as a gate; The NMOS N2 is connected between the fourth node D and the ground terminal Vss and receives the reference voltage Vrefc as a gate.

The operation of the high voltage sensing circuit according to the first embodiment configured as described above will be described in detail as follows.

The high voltage divider 410 outputs a high voltage divider signal pmpactv in an active mode and an inactive mode according to an input of a signal. Here, the signal is a signal that is in a low level in the active mode and then transitions to a high level as it progresses to the inactive mode.

First, when the semiconductor device is in the active mode, a signal is input to the PMOS P3 and the inverter INV1 at a low level. Accordingly, since the PMOS P3 and the NMOS N4 are turned on, the current Idiv flowing from the high voltage applying terminal Vpp to the ground terminal Vss is PMOS P3, resistor Rup, and resistor Rdn. ) And NMOS (N4). Accordingly, the high voltage divider 410 outputs the signal divided by the resistor Rup and the resistor Rdn as the high voltage divider signal pmpactv. In the above, if the resistance values of the resistor Rup and the resistor Rdn are the same, the high voltage distribution signal pmpactv corresponding to 1 / 2Vpp is output to the node X.

Next, the comparator 420 compares and amplifies the high voltage distribution signal pmpactv applied to the gate of the NMOS N1 with the reference voltage Vrefc applied to the gate of the NMOS N2 to enable high or low level high voltage. Generate the signal vpp-en.

In detail, as a result of comparing the high voltage distribution signal pmpactv and the reference voltage Vrefc, if the high voltage distribution signal pmpactv is lower than the reference voltage Vrefc, the NMOS N2 is turned on and the node D is turned on. ) Becomes the low level. Then, the PMOS P1 is turned on by receiving a low level signal from the node D as a gate, and the node C is pulled up to a high level. Therefore, when the high voltage distribution signal pmpactv is lower than the reference voltage Vrefc, the high voltage enable signal vpp_en is output at a high level to perform a high voltage pumping operation.

On the other hand, as a result of comparison, if the high voltage distribution signal pmpactv is higher than the reference voltage Vrefc, the NMOS N1 is turned on and the node C is pulled down to the low level. Therefore, when the high voltage distribution signal pmpactv is higher than the reference voltage Vrefc, the high voltage enable signal vpp_en is output at a low level so that the high voltage pumping operation is not performed.

On the other hand, when the semiconductor device transitions from the active mode to the inactive mode, the signal transitions to a high level and is input to the PMOS P3 and the inverter INV1. Accordingly, since the PMOS P3 and the NMOS N4 are turned off, the current Idiv flowing from the high voltage applying terminal Vpp to the ground terminal Vss is divided into a resistor R1, a resistor Rup, and a resistor Rdn. ) And through the resistor R2. Therefore, the high voltage divider 410 outputs the signal divided by the resistor R1 + resistor Rup and the resistor Rdn + resistor R2 as the high voltage divider signal pmpactv. Subsequently, the comparator 420 receives the high voltage distribution signal pmpactv and outputs a high voltage enable signal vpp-en by the same operation as in the active mode.

As described above, the high voltage distribution unit 410 according to the first embodiment adjusts the number of resistors involved in the voltage dividing action depending on whether the active mode or the inactive mode is used, thereby enabling rapid and accurate high voltage pumping operation in the active mode. When in inactive mode, the standby current or the self refresh current is reduced to reduce the current consumption.

That is, in the active mode, only the resistor Rup and the resistor Rdn are involved in the high voltage voltage dividing operation. Thus, the influence of the parasitic capacitor is reduced and the high voltage distribution signal (pmpactv) and the high voltage enable signal (vpp_en) are rapidly changed to the high voltage (Vpp). ) Can be followed. Accordingly, the high voltage pumping device may pump a constant and stable high voltage Vpp.

On the other hand, in the inactive mode, the resistor R1, the resistor Rup, the resistor Rdn, and the resistor R2 participate in the high voltage voltage dividing operation. Therefore, since the current Idiv flowing from the high voltage applying terminal Vpp to the ground terminal Vss decreases due to the increase in the resistance value, the standby current or the cell refresh current decreases, thereby reducing unnecessary current consumption. The margin from the specified value for the current specified in the specification can also be increased.

Of course, the value of the current (Idiv) is increased during the active operation, but the amount of increase is only a few tens [m], which is extremely small compared to the total active current of several tens [mA] or more The amount of current increase can be sufficiently ignored. In addition, in the inactive mode, there is almost no consumption of the high voltage (Vpp), and even if the parasitic capacitor increases with the use of a large resistor, it is possible to quickly cope with the fluctuation of the high voltage (Vpp) sufficiently, and thus the target high voltage (Vpp). ) Can keep the level stable.

In the above, the number of resistance elements included in the high voltage distribution unit 410 may be arbitrarily added or changed depending on system conditions within a range not departing from the spirit of the present invention.

5 illustrates a high voltage sensing circuit according to a second embodiment of the present invention, and looks at the configuration and operation of the high voltage sensing circuit according to the second embodiment with reference to this.

As shown in FIG. 5, the high voltage sensing circuit according to the second embodiment includes a first distribution unit 511 for dividing the high voltage signal Vpp by the first resistor element groups R3 and R4 and outputting the divided voltage. A second divider 512 for dividing and outputting the signal Vpp by the second resistor element groups R5, R6, R7, and R8; and in the active mode, the first divider 511 is enabled. A high voltage distributor 510 including a selector 513 for enabling the second distributor 512 to output a high voltage distribution signal pmpactv in the inactive mode; And a comparator 520 which receives the high voltage distribution signal pmpactv and compares and amplifies a predetermined reference voltage Vrefc to generate a high voltage enable signal vpp_en.

The synthetic resistance value of the first resistance element groups R3 and R4 is smaller than the synthetic resistance value of the second resistance element groups R5, R6, R7 and R8. The second resistor element group R5, R6, R7, and R8 includes a plurality of resistors connected in series.

The selector 513 is turned on in an active mode to enable the first distribution unit 511 and the second gate 512 to be turned on in an inactive mode. It includes a second gate (G2) to enable the.

The comparison unit 520 includes a PMOS P1 connected between the power supply voltage applying terminal Vdd and the first node I; A PMOS P2 connected between the power supply voltage applying terminal Vdd and a second node J; An NMOS N1 connected between a first node I and a ground terminal Vss and receiving the high voltage distribution signal pmpactv as a gate; The NMOS N2 is connected between the second node J and the ground terminal Vss and receives the reference voltage Vrefc as a gate.

The operation of the high voltage sensing circuit according to the second embodiment configured as described above will be described in detail below.

The high voltage distribution unit 510 outputs a high voltage distribution signal pmpactv in an active mode and an inactive mode according to an input of a signal. Here, the signal is a signal that is in a low level in the active mode and then transitions to a high level as it progresses to the inactive mode.

First, when the semiconductor device is in an active mode, a signal is input at a low level. Accordingly, since the gate G1 is turned on and the gate G2 is turned off, the signal of the node F voltage-divided by the resistor R3 and the resistor R4 of the first distribution unit 511 is turned on. Is output as the high voltage distribution signal pmpactv. In the above description, if the resistances of the resistors R3 and R4 are the same, the high voltage distribution signal pmpactv corresponding to 1 / 2Vpp is output to the node H, and the high voltage applying terminal Vpp and the ground terminal ( The current Idiv1 due to the resistor R3 and the resistor R4 flows between Vss.

Subsequently, the comparator 520 compares and amplifies the high voltage distribution signal pmpactv applied to the gate of the NMOS N1 with the reference voltage Vrefc applied to the gate of the NMOS N2 to enable high or low level high voltage. Generate the signal vpp-en. Here, the specific operation of the comparison unit 520 is the same as the operation of the comparison unit 420 of the first embodiment. Accordingly, as a result of comparing the high voltage distribution signal pmpactv and the reference voltage Vrefc, if the high voltage distribution signal pmpactv is lower than the reference voltage Vrefc, the high voltage enable signal vpp_en is output at a high level to pump the high voltage. If the high voltage distribution signal pmpactv is higher than the reference voltage Vrefc, the high voltage enable signal vpp_en is output at a low level so that the high voltage pumping operation is not performed.

On the other hand, when the semiconductor device transitions from the active mode to the inactive mode, the signal is input to the high level transition. Accordingly, the gate G1 is turned off and the gate G2 is turned on, so that the resistor R5 + resistor R6 and resistor R7 + resistor R8 of the second distribution unit 512 are turned on. The signal of the node G divided by the voltage is output as the high voltage distribution signal pmpactv. In the above, if the combined resistance of the resistor R5 + resistor R6 and the combined resistance of the resistor R7 + resistor R8 are the same, the high voltage distribution signal pmpactv corresponding to 1 / 2Vpp is applied to the node H. The current Idiv2 is generated by the resistor R5, the resistor R6, the resistor R7, and the resistor R4 between the high voltage applying terminal Vpp and the ground terminal Vss. Subsequently, the comparator 520 receives the high voltage distribution signal pmpactv and outputs a high voltage enable signal vpp-en by the same operation as in the active mode.

As described above, the high voltage distribution unit 510 according to the second embodiment selects any one of the plurality of distribution units 511 and 512 according to whether the active mode or the inactive mode is used. It enables pumping operation and reduces current consumption by reducing standby current or self-refresh current when in inactive mode.

That is, the combined resistance of the first group of resistors R3 and R4 is smaller than that of the second groups of resistors R5, R6, R7, and R8. In the active mode, the resistors R3 and R4 are used. Since only the) is involved in the high voltage voltage dividing operation, the influence of the parasitic capacitor is reduced and the high voltage distribution signal (pmpactv) and the high voltage enable signal (vpp_en) can quickly follow the change in the high voltage (Vpp). Accordingly, the high voltage pumping device may pump a constant and stable high voltage Vpp.

On the other hand, in the inactive mode, the resistors R5, R6, R7, and R8 participate in the high voltage voltage dividing operation. Therefore, since the current Idiv2 flowing from the high voltage applying terminal Vpp to the ground terminal Vss decreases according to a large resistance value, the standby current or the self refresh current can be reduced to reduce unnecessary current consumption. The margin from the specified value for the current specified in (Spec.) Also increases.

Of course, in the above active operation, the value of the current Idiv1 is larger than the current Idiv2, but the increased amount is only a few tens of microwatts, which is extremely small compared to the total active current of several tens of mA or more. Since the current increase amount can be sufficiently ignored. In addition, in the inactive mode, there is almost no consumption of the high voltage (Vpp), and even if the parasitic capacitor increases with the use of a large resistor, it is possible to quickly cope with the fluctuation of the high voltage (Vpp) sufficiently, and thus the target high voltage (Vpp). ) Can keep the level stable.

In the above, the number of resistance elements included in the high voltage distribution unit 510 may be arbitrarily added or changed depending on system conditions within a range not departing from the spirit of the present invention.

FIG. 7 illustrates changes of the high voltage distribution signal pmpactv and the high voltage enable signal vpp_en in the active mode and the inactive mode in the high voltage sensing circuits according to the first and second embodiments. As shown, it can be seen that the high voltage enable signal vpp_en reacts quickly in the active mode and slow in the non-active mode according to any Vpp variation.

6 illustrates a configuration of a high voltage pumping apparatus according to an exemplary embodiment of the present invention, and looks at the configuration and operation of the high voltage pumping apparatus according to the present exemplary embodiment.

As shown in FIG. 6, the high voltage pumping device of the present embodiment includes a high voltage sensing circuit unit 100 for detecting a high voltage signal Vpp fed back to generate a high voltage enable signal vpp_en; An oscillator (200) for generating a predetermined pulse signal (osc1) in response to the high voltage enable signal (vpp_en); A pump controller 300 which outputs pump driving control signals g1 and g2 according to the pulse signal osc1 applied from the oscillator 200; The high voltage pump unit 400 pumps the high voltage signal Vpp according to the pump driving control signals g1 and g2. In the above, the high voltage sensing circuit unit 100 uses the high voltage sensing circuit of the first embodiment or the high voltage sensing circuit of the second embodiment.

The operation of the high voltage pumping apparatus according to the present embodiment configured as described above will be described in detail as follows.

The high voltage detection circuit unit 100 detects a high voltage (Vpp) signal to generate a high voltage enable signal vpp_en by the same operation as that of the high voltage detection circuit of the first or second embodiment. The high voltage enable signal vpp_en generated by the high voltage sensing circuit unit 100 is applied to the oscillator 200. When the high voltage enable signal vpp_en transitions to a high level, the high voltage pump unit 400 performs a pumping operation.

The oscillator 200 generates a pulse signal osc1 of a predetermined period in response to the high voltage enable signal vpp_en. Subsequently, the pump controller 300 outputs the pump driving control signals g1 and g2 according to the pulse signal osc1 applied from the oscillator 200, and the pump driving control signals g1 are input to the input terminals of the capacitors C1 and C4. The pump driving control signal g2 is input to the input terminals of the capacitors C2 and C3, respectively.

The high voltage pump unit 400 performs an operation of pumping the high voltage Vpp of a predetermined level in response to the pump driving control signals g1 and g2. That is, when the input terminal of the capacitor C3 becomes high level by the pump driving control signal g2, the NMOS N100 is turned on so that the node K is driven to the external power supply potential Vdd, and then the capacitor C1 When the input node of N1 becomes high level by the pump driving control signal g1, the potential of the node K rises to the desired high voltage level by the capacitor C1. Soon, the pump drive control signal g2 is at a low level. At this time, since the NMOS N200 is turned on because the pump driving control signal g1 is high level, the node L is driven to the external power supply potential Vdd. Accordingly, the PMOS P100 is turned on so that the potential of the node K is transferred to the node M. FIG.

Next, when the pump drive control signal g1 becomes low level and the pump drive control signal g2 becomes Vdd level, the above operation occurs in the node L and the high voltage is transmitted from the node L to the node M. FIG. Will be. As a result, the high voltage pumping apparatus repeats the above operation to continue the pumping operation so that the high voltage (Vpp) level reaches and maintains the target level.

Here, the high voltage pumping apparatus according to the present invention uses the high voltage sensing circuit of the first or second embodiment to perform a quick and accurate high voltage pumping operation in the active mode, and a standby current in the inactive mode. Current consumption can be reduced by reducing the self refresh current.

In the above embodiment, the high voltage pumping device that mainly generates the Vpp power source has been described. However, the above principle may be usefully used to pump the Vbb power source.

As described above, the high voltage sensing circuit and the high voltage pumping device using the same enable high voltage pumping operation in the active mode and reduce the current consumption between the high voltage applying terminal and the ground terminal in the inactive mode to reduce the high voltage pumping. This has the effect of reducing unnecessary current consumption.

Claims (19)

A high voltage distribution unit configured to divide the high voltage signal by a plurality of resistance elements and output a high voltage distribution signal, and in the active mode, only a portion of the plurality of resistance elements are selected between the high voltage applying stage and the ground terminal to form a current path; And a comparator configured to receive the high voltage distribution signal and perform comparative amplification with a predetermined reference voltage to generate a high voltage enable signal. The method of claim 1, And the high voltage distribution unit comprises the plurality of resistor elements including first to fourth resistors connected in series between the high voltage applying terminal and the ground terminal. The method of claim 2, The high voltage divider may include a first switch device installed between a first node between the first resistor and a second resistor and the high voltage applying terminal and turned on in an active mode, a second node between the third resistor and the fourth resistor; A high voltage sensing circuit comprising a second switch element is installed between the ground terminal is turned on in the active mode. The method of claim 3, wherein And the first switch element is a PMOS element and the second switch element is an NMOS element. The method according to any one of claims 1 to 4, The comparison unit A first pull-up element connected between the power supply voltage applying stage and the third node; A second pull-up element connected between the power supply voltage applying stage and a fourth node; A first pull-down device connected between the third node and a ground terminal and receiving the high voltage distribution signal through a gate; And a second pull-down device connected between the fourth node and a ground terminal and receiving the reference voltage through a gate. A first divider which divides and outputs a high voltage signal by a first resistor element group, a second divider which divides and outputs a high voltage signal by a second resistor element group, and enables the first divider in an active mode A high voltage divider including a selector for enabling the second divider to output a high voltage divider signal in an inactive mode; And a comparator configured to receive the high voltage distribution signal and perform comparative amplification with a predetermined reference voltage to generate a high voltage enable signal. The method of claim 6, And a combined resistance of the first group of resistance elements is smaller than that of the second group of resistance elements. The method of claim 7, wherein The first resistor element group and the second resistor element group includes a plurality of resistors connected in series. The method of claim 6, And the selector comprises a first gate turned on in an active mode to enable the first distributor, and a second gate turned on in an inactive mode to enable the second distributor. The method according to any one of claims 6 to 9, The comparison unit A first pull-up element connected between the power supply voltage applying stage and the first node; A second pull-up element connected between the power supply voltage applying stage and a second node; A first pull-down device connected between the first node and a ground terminal and receiving the high voltage distribution signal through a gate; And a second pull-down device connected between the second node and a ground terminal and receiving the reference voltage through a gate. A high voltage sensing circuit unit configured to sense a high voltage signal fed back to generate a high voltage enable signal; An oscillator for generating a predetermined pulse signal in response to the high voltage enable signal; A pump controller which outputs a pump driving control signal according to the pulse signal applied from the oscillator; It comprises a high voltage pump unit for pumping the high voltage signal in accordance with the pump drive control signal, The high voltage sensing circuit unit outputs a high voltage distribution signal by dividing the high voltage signal by a plurality of resistor elements, and in the active mode, only a portion of the plurality of resistors are selected between the high voltage applying terminal and the ground terminal to form a current path. A distribution unit; And a comparator configured to receive the high voltage distribution signal and compare and amplify a predetermined reference voltage to output the high voltage enable signal. The method of claim 11, The high voltage pumping device includes the plurality of resistor elements including first to fourth resistors connected in series between the high voltage applying stage and the ground terminal. The method of claim 12, The high voltage divider may include a first switch device installed between a first node between the first resistor and a second resistor and the high voltage applying terminal and turned on in an active mode, a second node between the third resistor and the fourth resistor; A high voltage pumping device including a second switch device is installed between the ground terminal is turned on in the active mode. The method according to any one of claims 11 to 13, The comparison unit A first pull-up element connected between the power supply voltage applying stage and the third node; A second pull-up element connected between the power supply voltage applying stage and a fourth node; A first pull-down device connected between the third node and a ground terminal and receiving the high voltage distribution signal through a gate; And a second pull-down device connected between the fourth node and a ground terminal and receiving the reference voltage through a gate. A high voltage sensing circuit unit configured to sense a high voltage signal fed back to generate a high voltage enable signal; An oscillator for generating a predetermined pulse signal in response to the high voltage enable signal; A pump controller which outputs a pump driving control signal according to the pulse signal applied from the oscillator; It comprises a high voltage pump unit for pumping the high voltage signal in accordance with the pump drive control signal, The high voltage sensing circuit unit divides the high voltage signal by a first resistor element group and outputs the first divider, a second divider which divides and outputs the high voltage signal by a second resistor element group, A high voltage divider including a selector to enable the first divider and to enable the second divider to output a high voltage divider signal in an inactive mode; And a comparator configured to receive the high voltage distribution signal and compare and amplify a predetermined reference voltage to output the high voltage enable signal. The method of claim 15, The high voltage pumping device of claim 1, wherein the combined resistance of the first group of resistance elements is smaller than the combined resistance of the second group of resistance elements. The method of claim 16, The first resistor element group and the second resistor element group includes a plurality of resistors connected in series. The method of claim 15, And the selector comprises a first gate turned on in an active mode to enable the first distributor, and a second gate turned on in an inactive mode to enable the second distributor. The method according to any one of claims 15 to 18, The comparison unit A first pull-up element connected between the power supply voltage applying stage and the first node; A second pull-up element connected between the power supply voltage applying stage and a second node; A first pull-down device connected between the first node and a ground terminal and receiving the high voltage distribution signal through a gate; And a second pull-down device connected between the second node and a ground terminal and receiving the reference voltage through a gate.

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