KR20060013276A - Semiconductor manufacturing equipment having a shower head improved assembly - Google Patents

Semiconductor manufacturing equipment having a shower head improved assembly Download PDF

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Publication number
KR20060013276A
KR20060013276A KR1020040062171A KR20040062171A KR20060013276A KR 20060013276 A KR20060013276 A KR 20060013276A KR 1020040062171 A KR1020040062171 A KR 1020040062171A KR 20040062171 A KR20040062171 A KR 20040062171A KR 20060013276 A KR20060013276 A KR 20060013276A
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South Korea
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shower head
chamber
gas supply
semiconductor manufacturing
manufacturing equipment
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KR1020040062171A
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Korean (ko)
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신희석
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삼성전자주식회사
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Priority to KR1020040062171A priority Critical patent/KR20060013276A/en
Publication of KR20060013276A publication Critical patent/KR20060013276A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles

Abstract

개시된 조립성이 개선된 샤워헤드를 갖는 반도체 제조설비는 반응가스가 공급되는 가스공급라인이 설치되고, 천장면에 걸침면이 형성된 걸침부를 갖는 챔버 및 챔버 내부에 설치되되, 챔버의 걸침부에 걸쳐져 고정설치되록 걸림부가 형성되는 샤워헤드를 포함하며, 걸침부와 걸림부 내부에는 샤워헤드의 분출구와 연통되어 가스공급라인으로 부터 공급되는 반응가스가 유동되도록 가스공급홀이 형성된다.The semiconductor manufacturing equipment having the shower head with improved assembly performance is installed in the chamber and the chamber having a gas supply line to which the reaction gas is supplied, and a threaded surface formed on the ceiling surface, And a shower head having a locking portion formed to be fixedly installed, and a gas supply hole is formed in the hook portion and the locking portion so as to communicate with the outlet of the shower head so that the reaction gas supplied from the gas supply line flows.

샤워헤드, 챔버Showerhead, chamber

Description

조립성이 개선된 샤워헤드를 갖는 반도체 제조설비{Semiconductor Manufacturing Equipment Having a Shower Head Improved Assembly}Semiconductor Manufacturing Equipment Having a Shower Head Improved Assembly}

도 1은 종래의 샤워헤드가 장착된 반도체 제조설비를 보여주는 개략단면도,1 is a schematic cross-sectional view showing a semiconductor manufacturing apparatus equipped with a conventional shower head;

도 2는 본 발명의 조립성이 개선된 샤워헤드를 갖는 반도체 제조설비를 보여주는 분해사시도,Figure 2 is an exploded perspective view showing a semiconductor manufacturing equipment having a showerhead with improved assembly of the present invention,

도 3은 도 2에 도시된 선 A-A’에 따라 결합상태를 보여주는 단면도,3 is a cross-sectional view showing a bonding state along the line A-A 'shown in FIG.

도 4는 도 3에 도시된 표시부호 B에 대한 부분확대단면도,4 is a partially enlarged cross-sectional view of a display B shown in FIG.

도 5는 도 3에 도시된 표시부호 C에 대한 부분확대단면도이다.FIG. 5 is a partially enlarged cross-sectional view of the symbol C shown in FIG. 3.

** 도면의 주요부분에 대한 부호의 설명 **** Explanation of symbols for main parts of drawings **

100 : 챔버 150 : 걸침부100: chamber 150: hanger

151 : 제 1가스공급홀 200 : 샤워헤드151: first gas supply hole 200: shower head

220 :걸림부 221 : 제 2가스공급홀220: latching portion 221: second gas supply hole

250 : 탄성부재250: elastic member

본 발명은 반도체 제조설비용 샤워헤드에 관한 것으로써, 보다 상세하게는 챔버 내부에 샤워헤드를 결쳐서 밀착시켜 고정함으로써, 조립을 용이하게 하고, 챔버 외부로의 반응가스 누설을 방지하도록 한 반도체 제조설비용 샤워헤드에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a shower head for semiconductor manufacturing equipment, and more particularly, to fabricating a semiconductor by facilitating assembling and preventing leakage of a reaction gas to the outside of the chamber by attaching and fixing the shower head in a chamber. A showerhead for a facility.

일반적으로 웨이퍼를 처리하는 반도체 제조설비에는 웨이퍼 상면에 박막을 형성시키는 CVD(Chemical Vapor Deposition)공정을 수행하는 설비와, 웨이퍼 상의 특정 부분의 물질을 제거하는 식각(Etching)공정을 수행하는 설비가 있으며, 상기 각 설비에는 웨이퍼상에 소정의 공정을 진행하기 위해 내부에 웨이퍼가 안착되는 챔버내부로 소정의 반응가스를 공급받아 웨이퍼상에 분사시키는 샤워헤드(Shower Head)가 장착된다.In general, semiconductor manufacturing equipment for processing wafers includes equipment for performing a chemical vapor deposition (CVD) process to form a thin film on the upper surface of the wafer, and equipment for performing an etching process for removing material from a specific portion of the wafer. Each facility is equipped with a shower head for supplying a predetermined reaction gas into the chamber in which the wafer is seated and spraying the wafer onto the wafer in order to perform a predetermined process on the wafer.

도 1을 참조하면, 종래의 웨이퍼를 처리하는 반도체 제조설비는 진공환경을 조성할 수 있는 챔버(100)를 이루며, 상기 챔버(100) 내부에는 공정이 진행될 웨이퍼(W)가 안착되는 서셉터(110)가 마련되고, 상기 챔버(100) 내부 상측에는 가스공급장치(131, 132)에 의해 공급되는 반응가스를 유입시켜 챔버(100) 내부로 분사시키는 샤워헤드(200)가 마련된다.Referring to FIG. 1, a semiconductor manufacturing apparatus for processing a conventional wafer forms a chamber 100 that can create a vacuum environment, and a susceptor on which a wafer W to be processed is mounted in the chamber 100. 110 is provided, and the shower head 200 is provided above the chamber 100 to inject the reaction gas supplied by the gas supply device (131, 132) into the chamber 100.

여기서, 챔버(100) 내부에 장착되는 샤워헤드(120)는 볼트등의 체결수단(10)을 통해 샤워헤드(120) 상부가 챔버(100) 천장면에 밀착된 상태로 체결되어 고정된다.Here, the shower head 120 mounted inside the chamber 100 is fastened in a state in which the upper portion of the shower head 120 is in close contact with the ceiling surface of the chamber 100 through the fastening means 10 such as a bolt.

이때, 샤워헤드(120) 내부에 형성된 가스공급홀(121, 122)은 챔버(100) 외부의 가스공급라인(131a, 132a)과 연통되도록 위치가 결정된다.At this time, the gas supply holes 121 and 122 formed in the shower head 120 are positioned to communicate with the gas supply lines 131a and 132a outside the chamber 100.

상기와 같은 상태에서 체결수단(10)을 허용치 이상의 무리한 힘으로 조여서 샤워헤드(120)를 체결하는 경우, 체결수단(10)이 파손되는 경우가 발생한다.When the fastening means 10 is tightened with an excessive force above an allowable value in the above state to fasten the shower head 120, the fastening means 10 may be broken.

이와 같은 경우, 체결수단(10)이 파손되면서, 챔버(100) 내부에 장착된 샤워헤드(120)가 일측으로 기울게 되며, 챔버(100) 내부에 분사되어 잔존하는 반응가스는 체결수단(10)이 파손되면서 벌어진 체결홀(11)을 통해 누설이 되는 문제점이 있다.In this case, as the fastening means 10 is broken, the shower head 120 mounted inside the chamber 100 is inclined to one side, and the remaining reaction gas injected into the chamber 100 remains in the fastening means 10. There is a problem in that leakage through the fastening hole 11 is opened while being broken.

또한, 상기와 같이 누설되는 반응가스가 인화성 가스인 경우, 화재발생으로 인해 인명과 물적 피해를 가져오는 큰 문제점이 있었다.In addition, when the reactive gas leaked as described above is a flammable gas, there is a big problem of causing human life and physical damage due to fire.

따라서, 본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로써, 본 발명의 반도체 제조설비용 샤워헤드에 따르면, 챔버 내부 천장부에 걸침면이 형성된 걸침부를 형성하고, 상기 걸침부에 샤워헤드가 걸쳐져 고정되도록 샤워헤드몸체에 걸림부를 형성하여 고정시키고, 챔버 외부로 부터 공급되는 반응가스는 챔버의 걸침부와 샤워헤드의 걸림부 내부에 형성된 가스공급홀을 일치시켜 공급되도록 하여 챔버내부에 샤워헤드로 부터 분사된 반응가스가 챔버외부로 누설되는 것을 방지함은 물론 샤워헤드를 손쉽게 착탈시킬 수 있도록 한 반도체 제조설비의 샤워헤드를 제공함에 있다.Therefore, the present invention has been made in order to solve the above problems, according to the shower head for semiconductor manufacturing equipment of the present invention, to form a cladding portion is formed in the ceiling portion in the ceiling inside the chamber, the shower head is A locking portion is formed and fixed to the shower head body so as to be fixed. The reaction gas supplied from the outside of the chamber is supplied to match the gas supply hole formed in the locking portion of the chamber with the locking portion of the shower head. It is to provide a shower head of the semiconductor manufacturing equipment to prevent the reaction gas injected from the leakage of the outside of the chamber as well as to easily detach the shower head.

본 발명의 조립성이 개선된 샤워헤드를 갖는 반도체 제조설비는 소정의 반응가스가 공급되는 가스공급라인이 설치되고, 천장면에 걸침면이 형성된 걸침부를 갖는 챔버; 및 상기 챔버 내부에 설치되되, 상기 걸침부의 걸침면에 걸쳐져 고정설치 되도록 걸림부가 형성된 샤워헤드를 포함한다.A semiconductor manufacturing apparatus having a showerhead having improved assembly ability of the present invention includes a chamber having a gas supply line to which a predetermined reaction gas is supplied, and a latching portion formed on a ceiling surface thereof; And a shower head installed in the chamber and having a locking portion to be fixedly installed over the latching surface of the latching portion.

여기서, 상기 샤워헤드는 상기 걸침부의 걸침면에 걸쳐져 고정설치되되, 상기 샤워헤드 상면과 상기 챔버의 천장면 사이에 상기 걸침면과 상기 걸림부가 걸쳐져 밀착되도록 탄성부재가 추가로 개재되는 것이 바람직하다.Here, the shower head is fixed to be installed across the engaging surface of the hook portion, it is preferable that the elastic member is further interposed so that the latching surface and the engaging portion is in close contact between the shower head upper surface and the ceiling surface of the chamber.

그리고, 상기 탄성부재는 상기 샤워헤드 상면과 상기 챔버의 천장면 사이에 개재되되, 상기 샤워헤드 상면, 또는 챔버 천장면에 설치되어 개재될 수도 있다.The elastic member may be interposed between the shower head upper surface and the ceiling surface of the chamber, and may be installed on the shower head upper surface or the chamber ceiling surface.

또한, 상기 샤워헤드는 상기 챔버의 상기 걸침부에 걸쳐져 고정될 경우, 상기 걸침부 내부에 형성되어 상기 가스공급라인과 연통되는 제 1가스공급홀과, 상기 샤워헤드의 상기 걸림부 내부에 형성된 제 2가스공급홀이 연통되어 상기 샤워헤드의 분사구를 통하여 상기 반응가스가 분사되도록 형성된 것이 바람직하다.The shower head may include a first gas supply hole formed in the latch portion and communicating with the gas supply line when the shower head is fixed across the latch portion of the chamber, and a second portion formed inside the latch portion of the shower head. It is preferable that the two gas supply holes communicate with each other so that the reaction gas is injected through the injection hole of the shower head.

그리고, 상기 챔버의 상기 걸침부와 상기 샤워헤드의 상기 걸림부는 방사형으로 형성되는 것이 바람직하다.
In addition, the latching portion of the chamber and the locking portion of the shower head may be formed radially.

이하, 첨부된 도면을 참조로 하여 본 발명의 조립성이 개선된 샤워헤드를 갖는 반도체 제조설비에 대한 구성을 설명하도록 한다.Hereinafter, with reference to the accompanying drawings will be described a configuration of a semiconductor manufacturing equipment having a showerhead improved assembly performance of the present invention.

도 2를 참조로 하면, 본 발명의 조립성이 개선된 샤워헤드를 갖는 반도체 제조설비는 소정의 공정, 예컨데 박막형성공정을 진행하기 위해 내부에 공정이 진행될 웨이퍼(W)가 안착되고, 반응가스가 유입되도록 연통된 가스공급라인(131a, 132a)이 설치되며, 천장면에 걸침면(150a)이 형성된 걸침부(150)를 갖는 챔버(100)와, 챔버(100) 내부에 설치되되, 걸침부(150)의 걸침면(150a)에 걸쳐져 고정되도록 걸림부(220)가 형성된 샤워헤드(200)를 포함한다.Referring to FIG. 2, a semiconductor manufacturing apparatus having a showerhead having improved assembly ability of the present invention includes a wafer W on which a process is to be performed, in order to perform a predetermined process, for example, a thin film forming process, and a reaction gas. The gas supply lines 131a and 132a communicated with each other to be introduced therein, are installed in the chamber 100 and the chamber 100 having a catching part 150 formed with a catching surface 150a on the ceiling surface. It includes a shower head 200 is formed with a locking portion 220 to be fixed across the engaging surface (150a) of the needle 150.

그리고, 샤워헤드(200)는 상기 걸침부(150)의 걸침면(150a)에 걸쳐져 고정설치되되, 샤워헤드(200) 상면과 챔버(100)의 천장면 사이에 걸침면(150a)과 걸림부(220)가 걸쳐져 밀착되도록 스프링등의 탄성부재(250)가 추가로 개재된다.In addition, the shower head 200 is fixedly installed over the latching surface 150a of the hooking portion 150, and the hooking surface 150a and the hooking portion are disposed between the top of the showerhead 200 and the ceiling surface of the chamber 100. An elastic member 250, such as a spring, is further interposed so that the 220 is in close contact with each other.

여기서, 탄성부재(250)는 샤워헤드(200) 상면과 챔버(100)의 천장면 사이에 개재되되, 샤워헤드(200) 상면, 또는 챔버(100) 천장면에 고정설치되어 개재될 수도 있다.Here, the elastic member 250 may be interposed between the upper surface of the shower head 200 and the ceiling surface of the chamber 100, may be interposed fixedly installed on the upper surface of the shower head 200, or the ceiling surface of the chamber 100.

그리고, 샤워헤드(200)는 챔버(100)의 걸침부(150)에 걸쳐져 고정될 경우, 걸침부(150) 내부에 형성되어 가스공급라인(131a)과 연통되는 제 1가스공급홀(151)과, 샤워헤드(200)의 걸림부(220) 내부에 형성된 제 2가스공급홀(221)이 연통되도록 고정되어 상기 샤워헤드(200)의 분사구(200a)를 통하여 상기 반응가스가 분사되도록 형성된다.In addition, when the shower head 200 is fixed across the hook portion 150 of the chamber 100, the shower head 200 is formed in the hook portion 150 to communicate with the gas supply line 131a. And, the second gas supply hole 221 formed in the engaging portion 220 of the shower head 200 is fixed to communicate with the reaction gas is formed to be injected through the injection hole (200a) of the shower head 200. .

또한, 챔버(100)의 걸침부(150)와 샤워헤드(200)의 걸림부(220)는 방사형으로 형성되는 것이 바람직 할 것이다.
In addition, the hook portion 150 of the chamber 100 and the catching portion 220 of the shower head 200 may be formed radially.

다음은, 상기와 같은 구성을 통한 본 발명에 따르는 바람직한 실시예를 설명하도록 한다.Next, to describe the preferred embodiment according to the present invention through the configuration as described above.

도 2를 참조하면, 챔버(100) 내부 천장면에 형성된 방사형으로 형성된 복수개의 걸침부(150) 사이로 샤워헤드(200)의 걸림부(220)를 끼운다음, 걸침면(150a)에 걸림부(220)의 밑면이 밀착되어 걸쳐지도록 돌려서 고정한다. Referring to FIG. 2, the locking portion 220 of the shower head 200 is inserted between the plurality of radially caught portions 150 formed on the ceiling surface inside the chamber 100, and then the caught portion 150a is disposed on the caught surface 150a. The bottom of 220) is fixed by turning it so that it is in close contact.                     

여기서, 샤워헤드(200) 상면과 챔버(100) 천장면 사이에는 스프링등의 탄성부재(250)가 개재되어 상/하 방향으로 밀어내는 힘이 작용하여 걸침면(150a)과 걸림부(220)의 밀착정도를 높여 고정력을 향상시킨다.Here, between the upper surface of the shower head 200 and the ceiling surface of the chamber 100, an elastic member 250 such as a spring is interposed, and a pushing force is applied in the up / down direction so that the engaging surface 150a and the engaging portion 220 are actuated. Improve the fixing power by increasing the adhesion of

그리고, 상기 탄성부재(250)는 샤워헤드(200) 상면 또는 챔버(100) 천장면 어느 한쪽에 고정설치될 수도 있다.In addition, the elastic member 250 may be fixed to one of the upper surface of the shower head 200 or the ceiling surface of the chamber 100.

도 3 및 도 4를 참조하면, 걸침부(150) 내부에 형성된 제 1가스공급홀(151) 입구(151a)는 챔버(100) 상부에 연통되어 설치된 가스공급라인(131a, 132a)과 연통되도록 형성되며, 제 1가스공급홀(151) 출구(151b)는 걸침부(150)의 걸침면(150a)에 걸쳐진 샤워헤드(200)의 걸림부(220)에 형성된 제 2가스공급홀(221) 입구(221a)와 연통된다.3 and 4, the inlet 151a of the first gas supply hole 151 formed inside the hooking part 150 communicates with the gas supply lines 131a and 132a installed in communication with the upper part of the chamber 100. The first gas supply hole 151 and the outlet 151b are formed in the second gas supply hole 221 formed in the engaging portion 220 of the shower head 200 across the engaging surface 150a of the engaging portion 150. It communicates with the inlet 221a.

따라서, 가스공급라인(131a, 132a)으로 부터 공급되는 반응가스는 제 1가스공급홀(151)을 통해 유입되어 제 2가스공급홀(221)을 통해 가스홀(230)을 거쳐 분사구(200a)로 분사된다.Accordingly, the reaction gas supplied from the gas supply lines 131a and 132a flows through the first gas supply hole 151 and passes through the gas hole 230 through the second gas supply hole 221 to the injection hole 200a. Is sprayed on.

여기서, 제 1가스공급홀(151)의 출구(151b)와 제 2가스공급홀(221)의 입구(221a)는 서로 밀착되어 연통되되, 공급되는 반응가스의 챔버(100) 내부로의 누설을 방지하기 위해 오링(O-Ring)등의 실링수단이 더 설치되는 것이 바람직할 것이다.Here, the outlet 151b of the first gas supply hole 151 and the inlet 221a of the second gas supply hole 221 are in close contact with each other and communicate with each other, thereby preventing leakage of the supplied reaction gas into the chamber 100. In order to prevent it, it may be desirable to further provide a sealing means such as an O-ring.

물론, 챔버(100) 내부로 미량이 반응가스가 누설되는 것은 공정상 큰 문제는 없으나, 샤워헤드(200)의 분사구(200a)를 통해 분사되는 반응가스의 균일한 분사정도를 유지하기 위해 상기와 같이 실링수단이 설치되는 것이 바람직하다. Of course, a small amount of reaction gas leaks into the chamber 100, but there is no big problem in the process, but the above-mentioned method is necessary to maintain a uniform injection degree of the reaction gas injected through the injection hole 200a of the shower head 200. It is preferable that the sealing means be installed as well.                     

그럼으로써, 챔버(100) 외부를 통해 볼트등의 체결수단(10)을 사용하여 샤워헤드(200)를 고정하지 않음으로 체결수단(10)이 끼워지는 틈 사이로 반응가스가 누설되는 것이 효율적으로 방지된다.Thus, the reaction gas is effectively prevented from leaking between the gaps in which the fastening means 10 is fitted by not fastening the shower head 200 using the fastening means 10 such as bolts through the outside of the chamber 100. do.

한편, 도면에 도시되지는 않았지만, 상기 챔버(100)의 걸침부(150) 사이에 상기 샤워헤드(200)의 걸림부(220)를 끼워 돌려서 고정할 경우, 제 1, 2가스공급홀(151, 221)이 정확하게 일치되어야 함으로, 상기 걸침부(150) 일측면에 수직으로 걸침편이 형성되어 돌려서 고정되는 상기 샤워헤드(200)의 걸림부(220)의 회전 위치를 제한하여, 돌려지는 방향으로 걸림부(220)가 걸침부(151)에서 이탈되는 것을 방지함은 물론, 제 1, 2가스공급홀(151, 221)의 중심위치를 정확하게 맞출수 있도록 할 수도 있다.On the other hand, although not shown in the drawing, when the locking portion 220 of the shower head 200 is inserted and fixed between the hook portions 150 of the chamber 100, the first and second gas supply holes 151 , 221 should be exactly matched, by limiting the rotational position of the locking portion 220 of the shower head 200 is fixed by turning the hook is formed vertically on one side of the hook portion 150, in the direction to be turned It is also possible to prevent the locking unit 220 from being separated from the hooking unit 151 and to accurately match the center positions of the first and second gas supply holes 151 and 221.

따라서, 본 발명의 조립성이 개선된 샤워헤드를 갖는 반도체 제조설비에 의하면, 챔버 내부에 샹워헤드를 장착시, 챔버 천장면에 형성된 걸침부에 샤워헤드의 걸림부를 끼워 돌려서 고정함으로써, 작업자가 장치의 공수작업시 손쉽게 탈부착이 가능하도록 한다.Therefore, according to the semiconductor manufacturing equipment having the shower head with improved assembly performance of the present invention, when mounting the shower head in the chamber, the operator by inserting the locking portion of the shower head to the locking portion formed on the ceiling surface of the chamber, the operator It can be easily attached and detached during airborne work.

또한, 샤워헤드를 챔버외부로 부터 체결수단을 통해 고정하지 않고, 챔버 내부에 직접 걸쳐져 고정시킴으로써 반응가스가 챔버 외부로 누설되는 것을 방지 할 수 있음으로써, 인화성 반응가스를 사용하는 경우, 가스 누설로 인한 인명 및 물적 피해를 최대한 방지 할 수 있다.In addition, it is possible to prevent the reaction gas from leaking to the outside of the chamber by fixing the shower head directly from the outside of the chamber through the fastening means and preventing the leakage of the reaction gas to the outside of the chamber. It can prevent as much as possible due to human and material damage.

Claims (5)

소정의 반응가스가 공급되는 가스공급라인이 설치되고, 천장면에 걸침면이 형성된 걸침부를 갖는 챔버; 및A chamber having a gas supply line to which a predetermined reaction gas is supplied, and having a hook portion formed on a ceiling thereof; And 상기 챔버 내부에 설치되되, 상기 걸침부의 걸침면에 걸쳐져 고정설치되도록 걸림부가 형성된 샤워헤드를 포함하는 것을 특징으로 하는 조립성이 개선된 샤워헤드를 갖는 반도체 제조설비.And a shower head installed inside the chamber, the shower head having a locking portion formed to be fixedly installed across the latching surface of the latching portion. 제 1항에 있어서,The method of claim 1, 상기 샤워헤드는 상기 걸침부의 걸침면에 걸쳐져 고정설치되되, 상기 샤워헤드 상면과 상기 챔버의 천장면 사이에 상기 걸침면과 상기 걸림부가 걸쳐져 밀착되도록 탄성부재가 추가로 개재되는 것을 특징으로 하는 조립성이 개선된 샤워헤드를 갖는 반도체 제조설비.The shower head is fixedly installed across the hanging surface of the hanging portion, the assembly is characterized in that the elastic member is further interposed between the upper surface of the shower head and the ceiling surface of the chamber so that the engaging surface and the engaging portion is in close contact. A semiconductor manufacturing facility having this improved showerhead. 제 2항에 있어서,The method of claim 2, 상기 탄성부재는 상기 샤워헤드 상면과 상기 챔버의 천장면 사이에 개재되되, 상기 샤워헤드 상면에 설치되어 개재되는 것을 특징으로 하는 조립성이 개선된 샤워헤드를 갖는 반도체 제조설비.The elastic member is interposed between the upper surface of the shower head and the ceiling surface of the chamber, the semiconductor manufacturing equipment having an improved shower head, characterized in that installed on the upper surface of the shower head. 제 1항에 있어서,The method of claim 1, 상기 샤워헤드는 상기 챔버의 상기 걸침부에 걸쳐져 고정될 경우, 상기 걸침부 내부에 형성되어 상기 가스공급라인과 연통되는 제 1가스공급홀과, 상기 샤워헤드의 상기 걸림부 내부에 형성된 제 2가스공급홀이 연통되어 상기 샤워헤드의 분사구를 통하여 상기 반응가스가 분사되도록 형성된 것을 특징으로 하는 조립성이 개선된 샤워헤드를 갖는 반도체 제조설비.When the shower head is fixed across the latch portion of the chamber, a first gas supply hole is formed in the latch portion and communicates with the gas supply line, and a second gas formed inside the latch portion of the shower head. Supply hole is in communication with the semiconductor manufacturing equipment having an improved shower head, characterized in that the reaction gas is formed to be injected through the injection port of the shower head. 제 1항에 있어서,The method of claim 1, 상기 챔버의 상기 걸침부와 상기 샤워헤드의 상기 걸림부는 방사형으로 형성된 것을 특징으로 하는 조립성이 개선된 샤워헤드를 갖는 반도체 제조설비.And said latching portion of said chamber and said latching portion of said shower head are radially formed.
KR1020040062171A 2004-08-06 2004-08-06 Semiconductor manufacturing equipment having a shower head improved assembly KR20060013276A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100920417B1 (en) * 2007-08-01 2009-10-14 주식회사 에이디피엔지니어링 Sensing unit and substrate processing unit including the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100920417B1 (en) * 2007-08-01 2009-10-14 주식회사 에이디피엔지니어링 Sensing unit and substrate processing unit including the same

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