KR20060009773A - Semiconductor manufacturing equipment having an exhaust controller - Google Patents

Semiconductor manufacturing equipment having an exhaust controller Download PDF

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Publication number
KR20060009773A
KR20060009773A KR1020040058462A KR20040058462A KR20060009773A KR 20060009773 A KR20060009773 A KR 20060009773A KR 1020040058462 A KR1020040058462 A KR 1020040058462A KR 20040058462 A KR20040058462 A KR 20040058462A KR 20060009773 A KR20060009773 A KR 20060009773A
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South Korea
Prior art keywords
exhaust
control unit
reactor
exhaust line
valve
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KR1020040058462A
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Korean (ko)
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최석룡
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삼성전자주식회사
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Publication of KR20060009773A publication Critical patent/KR20060009773A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

개시된 배기조절장치를 갖는 반도체 제조설비는 내부에 히터블럭이 설치되고, 복수매의 웨이퍼가 저장되는 반응로와 반응로 내부에 소정의 반응가스를 공급하는 공급라인 및 반응로 내부의 반응가스를 배출하는 배기라인을 포함하는 반도체 제조 설비에 있어서, 배기라인 입구와 출구의 배기량을 일정하게 하기 위해서 배기라인에 배기라인 내부에 설치되어 배기량을 제어하는 회전판이 형성된 자동조절밸브와, 자동조절밸브의 회전판 동작을 제어하는 밸브제어부와, 배기라인 입구의 압력을 감지하는 압력감지기와, 압력감지기로 부터 소정의 압력값을 받아 기 설정된 압력값과 비교하여 밸브제어부로 소정의 신호를 보내는 비교제어부로 구성되는 배기조절장치를 구비한다.In the semiconductor manufacturing apparatus having the disclosed exhaust control device, a heater block is installed therein, and a supply line for supplying a predetermined reaction gas into the reactor and a plurality of wafers stored therein and discharge the reaction gas inside the reactor. A semiconductor manufacturing facility comprising an exhaust line, comprising: an automatic control valve having a rotary plate installed inside the exhaust line in the exhaust line to control the exhaust amount in order to make the exhaust volume at the exhaust line inlet and the outlet constant, and a rotary plate of the automatic control valve. It consists of a valve control unit for controlling the operation, a pressure sensor for detecting the pressure at the inlet of the exhaust line, and a comparison control unit for receiving a predetermined pressure value from the pressure sensor and comparing the preset pressure value to a predetermined signal to the valve control unit. An exhaust control device is provided.

반응로, 자동조절밸브Reactor, Automatic Control Valve

Description

배기조절장치를 갖는 반도체 제조설비{Semiconductor Manufacturing Equipment Having an Exhaust Controller}Semiconductor Manufacturing Equipment Having an Exhaust Controller

도 1a은 종래의 배기댐퍼가 설치된 반응로를 보여주는 단면도,1A is a cross-sectional view showing a reactor in which a conventional exhaust damper is installed;

도 1b는 도 1a에 도시된 표시부호 A의 확대단면도,FIG. 1B is an enlarged cross-sectional view of the symbol A shown in FIG. 1A,

도 2는 본 발명에 따른 배기조절장치를 보여주는 부분단면도,Figure 2 is a partial cross-sectional view showing an exhaust control device according to the invention,

도 3은 본 발명에 따른 배기조절장치의 동작을 보여주는 블럭도이다.Figure 3 is a block diagram showing the operation of the exhaust regulator according to the present invention.

< 도면의 주요부분에 대한 부호설명 ><Explanation of Signs of Major Parts of Drawings>

120 : 배기라인 300 : 압력감지기120: exhaust line 300: pressure sensor

500 : 자동조절밸브 510 : 회전판500: automatic control valve 510: rotating plate

550 : 동력수단 600 : 비교제어부550: power means 600: comparison control unit

640 : 밸브제어부 650 : 경보기640: valve control unit 650: alarm

700 : 전원부700: power supply

본 발명은 배기조절장치를 갖는 반도체 제조설비에 관한 것으로서, 보다 상세하게는 CVD(Chemical Vapor Deposition)등의 층간 절연막 공정중 반응로 내부로 부터 배기되는 열배기의 양과 압력을 항상 일정하게 유지할 수 있도록 한 배기조절장치를 갖는 반도체 제조 설비에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus having an exhaust control device, and more particularly, to maintain a constant amount and pressure of heat exhaust exhausted from the inside of a reactor during an interlayer insulation process such as chemical vapor deposition (CVD). A semiconductor manufacturing facility having an exhaust control device.

일반적으로 CVD등의 층간절연막 형성공정에 있어서, 가스를 공급하는 것이외에도 반응로 내부의 열과 미반응가스를 신속하게 배출하는 것이 중요하다. 상기와 같은 열과 미반응가스를 일정한 배기압으로 배출하지 못하게 되는 경우 설비의 이상과 함께 미반응가스에 의해 챔버내에 폴리머를 형성하여 오염시키게 되고 웨이퍼에 부착되어 파티클로 작용하게 된다. In general, in the process of forming an interlayer insulating film such as CVD, it is important to quickly discharge heat and unreacted gas inside the reactor in addition to supplying gas. When the heat and the unreacted gas as described above cannot be discharged at a constant exhaust pressure, the polymer is formed and contaminated in the chamber by the unreacted gas with the abnormality of the equipment and attached to the wafer to act as a particle.

도 1a 및 도 1b는 종래의 반도체 제조 설비의 배기장치를 보여주고 있다.1A and 1B show an exhaust device of a conventional semiconductor manufacturing facility.

도 1a를참조로 하면, 반응로(100) 내부의 복수개의 웨이퍼(W)는 히터블럭(150)상에 형성된 보트(170)내부에 적재되어 있고, 반응로(100) 일측에는 반응가스를 공급하는 공급라인(110)과, 공정후, 반응가스 및 열을 배기하기 위한 배기라인(120)이 설치되어 있다.Referring to FIG. 1A, a plurality of wafers W in the reactor 100 are loaded inside the boat 170 formed on the heater block 150, and supply reaction gas to one side of the reactor 100. The supply line 110 and the exhaust line 120 for exhausting the reaction gas and heat after the process is provided.

또한, 반응가스 및 열을 배출할 경우, 갑자기 많은 양이 배출되는 것을 방지하기 위해 배기댐퍼(200)가 배기라인(120)에 추가로 설치되어 있다.In addition, in the case of discharging the reaction gas and heat, an exhaust damper 200 is additionally installed in the exhaust line 120 in order to prevent a sudden large amount is discharged.

도 1b를 참조 하면, 배기댐퍼(200)는 배기라인(120) 내부에 설치되어 배기라인(120)의 직경에 대응되어 회전되도록 형성된 회전판(230)과 회전판(230)에 끼워져 배기라인(120) 외부에서 회전조작할 수 있도록 설치된 핸들(235)로 구성된다.Referring to FIG. 1B, the exhaust damper 200 is installed inside the exhaust line 120 to be fitted to the rotating plate 230 and the rotating plate 230 formed to rotate corresponding to the diameter of the exhaust line 120, and the exhaust line 120. It is composed of a handle 235 installed to be rotated from the outside.

상기와 같이 구성되는 반응로(100)를 통해 화학 기상 증착공정을 수행한 후, 배기라인(120) 일단에 설치된 토출펌프(미도시)의 펌핑작용으로 반응로(100) 내부의 열 및 반응가스를 배출하게 된다. After performing the chemical vapor deposition process through the reactor 100 is configured as described above, the heat and the reaction gas inside the reactor 100 by the pumping action of the discharge pump (not shown) installed in one end of the exhaust line 120 Will be discharged.                         

이때, 작업자는 배기라인(120)에 설치된 배기댐퍼(200)의 핸들(235)을 소정 방향으로 회전시켜 회전판(230)을 소정 각도로 개방시킨다.At this time, the operator rotates the handle 235 of the exhaust damper 200 installed in the exhaust line 120 in a predetermined direction to open the rotating plate 230 at a predetermined angle.

따라서, 반응로(100) 내부에 존재하는 반응가스와 열은 배기되게 된다.Therefore, the reaction gas and heat existing in the reactor 100 are exhausted.

그러나, 상기와 같이 작업자의 수작업에 의해서 핸들(235)을 돌려 회전판(230)을 개방시켜 배기하게 되는 경우 반응로(100) 내부와 배기라인(120)으로 배기되는 배기압을 일정하게 형성하기 어렵고, 회전판(230)을 너무 많이 개방한 경우 반응로(100) 내부의 열과 반응가스가 대량 배기되므로 반응로(100) 내부의 열손실을 유발 할 수 있다.However, when the handle 235 is rotated by the operator's manual operation to open and rotate the rotating plate 230, it is difficult to uniformly form the exhaust pressure exhausted into the reactor 100 and the exhaust line 120. When the rotary plate 230 is opened too much, heat and reaction gas are largely exhausted in the reactor 100, which may cause heat loss inside the reactor 100.

따라서, 상기와 같이 배기댐퍼(200)를 설치하여 배기량을 제어함에 따라서 반응로(100) 내부와 배기라인(120) 내부와의 온도편차가 발생하여 공정 불량을 유발하는 문제점이 있었다.Accordingly, as the exhaust damper 200 is installed as described above to control the displacement, there is a problem in that a temperature deviation occurs between the inside of the reactor 100 and the inside of the exhaust line 120 to cause a process defect.

따라서, 본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 반도체 제조 설비용 반응로 내부에서 소정의 공정을 마친 후, 배기되는 배기가스의 배기량을 일정하게하게 위해서 배기조절장치를 설치하여 일정한 배기압과 배기량을 조절함으로써 반응로 내부와 배기라인으로 배출되는 가스의 온도를 일정하게 하여 온도편차로 인한 공정 불량을 방지하도록 한 배기조절장치를 갖는 반도체 제조 설비를 제공하는데 있다.Accordingly, the present invention has been made to solve the above problems, and an object of the present invention is to control the exhaust gas to make the exhaust gas volume constant after exhausting a predetermined process inside the reactor for semiconductor manufacturing facilities. The present invention provides a semiconductor manufacturing facility having an exhaust control device which is provided with a device to regulate a constant exhaust pressure and an exhaust amount so that the temperature of the gas discharged into the reactor and the exhaust line is constant to prevent a process defect due to a temperature deviation. .

본 발명의 배기조절장치를 갖는 반도체 제조설비는 내부에 히터블럭이 설치 되고, 복수매의 웨이퍼가 저장되는 반응로와; 상기 반응로 내부에 소정의 반응가스를 공급하는 공급라인; 및 상기 반응로 내부의 반응가스를 배출하는 배기라인을 포함하는 반도체 제조 설비에 있어서, 상기 배기라인에 설치되어 상기 반응로 내부에서 소정의 공정 진행 후, 상기 반응가스를 배출할 경우 일정한 배기량을 유지하며 배출되도록 하는 배기조절장치를 포함한다.A semiconductor manufacturing apparatus having an exhaust control apparatus of the present invention includes a reactor in which a heater block is installed and a plurality of wafers are stored; A supply line for supplying a predetermined reaction gas into the reactor; And an exhaust line for discharging the reaction gas inside the reactor, wherein the exhaust gas is installed in the exhaust line to maintain a constant discharge amount when the reaction gas is discharged after a predetermined process is performed in the reactor. And an exhaust control device for discharging.

여기서, 상기 배기조절장치는 배기라인 내부에 설치되어 배기량을 제어하는 회전판이 형성된 자동조절밸브와, 상기 자동조절밸브의 회전판 동작을 제어하는 밸브제어부와, 상기 배기라인 입구의 압력을 감지하는 압력감지기와, 상기 압력감지기로 부터 소정의 압력값을 받아 기 설정된 압력값과 비교하여 상기 밸브제어부로 소정의 신호를 보내는 비교제어부를 포함한다.Here, the exhaust control device is provided in the exhaust line automatic control valve having a rotary plate for controlling the displacement, the valve control unit for controlling the operation of the rotating plate of the automatic control valve, and the pressure sensor for sensing the pressure of the exhaust line inlet And a comparison control unit which receives a predetermined pressure value from the pressure sensor and compares it with a preset pressure value and sends a predetermined signal to the valve control unit.

그리고, 상기 배기조절장치는 상기 배기라인 입구와 출구의 유량을 감지하도록 설치된 제 1,2유량감지기와, 상기 제 1, 2유량감지기로부터 유량값을 각각 전달받아 비교연산하여 상기 밸브제어부로 상기 자동조절밸브의 구동 신호를 보내는 비교제어부로 구성될 수도 있다.In addition, the exhaust control device is the first and second flow rate sensor installed to sense the flow rate of the inlet and outlet of the exhaust line, the flow rate value from the first and second flow rate sensor respectively received and compared to the valve control unit to the automatic operation It may be composed of a comparison control unit for sending a drive signal of the control valve.

또한, 상기 배기조절장치는 상기 배기라인 입구와 출구의 온도를 각각 감지하도록 설치된 제 1,2온도감지기와, 상기 제 1,2온도감지기로부터 온도값을 각각 전달받아 비교연산하여 상기 밸브제어부로 상기 자동조절밸브의 구동 신호를 보내는 비교제어부로 구성될 수도 있다.In addition, the exhaust control device is the first and second temperature sensor installed to sense the temperature of the exhaust line inlet and outlet, respectively, and receives the temperature value from the first and second temperature sensor, respectively, the comparison operation to the valve control unit It may be composed of a comparison control unit for sending a drive signal of the automatic control valve.

이하, 첨부된 도면을 참조로 하여, 본 발명의 실시예에 대한 구성을 좀 더 구체적으로 설명하도록 한다. Hereinafter, with reference to the accompanying drawings, it will be described in more detail the configuration for the embodiment of the present invention.                     

또한, 상기에 설명한 동일 기능을 갖는 동일구성요소에 대해서 동일부호를 명기하여 그에 대한 자세한 설명은 생략하기로 한다.In addition, the same reference numerals denote the same elements having the same functions as described above, and a detailed description thereof will be omitted.

도 2 및 도 3은 본 발명에 따른 실시예를 보여주고 있다.2 and 3 show an embodiment according to the invention.

도 2 및 도 3을 참조로 하면, 본 발명의 배기조절장치를 갖는 반도체 제조설비는 내부에 히터블럭(150)이 설치되고, 복수매의 웨이퍼(W)가 저장되는 반응로(100)와, 반응로(100) 내부에 화학기상증착 반응가스를 공급하는 공급라인(110) 및 반응로(100) 내부의 반응가스를 배출하는 배기라인(120)을 포함하는 반도체 제조 설비에 있어서, 배기라인(120)에 설치되어 반응로(100) 내부에서 화학 기상증착 공정 진행 후, 반응가스를 배출할 경우 일정한 배기량을 유지하며 배출되도록 하는 배기조절장치(800)를 포함한다.2 and 3, the semiconductor manufacturing equipment having an exhaust control apparatus of the present invention, the heater block 150 is installed therein, the reactor 100, a plurality of wafers (W) is stored, In the semiconductor manufacturing equipment comprising a supply line 110 for supplying chemical vapor deposition reaction gas into the reactor 100 and an exhaust line 120 for discharging the reaction gas in the reactor 100, the exhaust line ( 120 is installed in the reactor 100 after the chemical vapor deposition process in progress, when discharging the reaction gas includes a exhaust control device 800 to maintain a constant exhaust amount to be discharged.

여기서, 배기조절장치(800)는 배기라인(120) 내부에 설치되어 배기량을 제어하는 회전판(510)이 형성된 자동조절밸브(500)와, 자동조절밸브(500)의 회전판(510)의 회전 동작을 제어하는 밸브제어부(640)와, 배기라인(120) 입구의 압력을 감지하는 압력감지기(300)와, 압력감지기(300)로 부터 입구측의 압력값을 받아 기 설정된 압력값과 비교하여 밸브제어부(640)로 자동조절밸브(500)의 구동신호를 보내는 비교제어부(600)를 포함한다.Here, the exhaust control device 800 is installed in the exhaust line 120, the automatic control valve 500 is formed with a rotary plate 510 for controlling the displacement, and the rotary operation of the rotary plate 510 of the automatic control valve 500 The valve control unit 640 for controlling the pressure, the pressure sensor 300 for detecting the pressure of the exhaust line 120 inlet, and receives the pressure value of the inlet side from the pressure sensor 300 to compare with the preset pressure value valve The control unit 640 includes a comparison control unit 600 for sending a drive signal of the automatic control valve 500.

그리고, 배기조절장치(800)는 배기라인(120) 입구와 출구의 유량을 감지하도록 설치된 제 1,2유량감지기(410, 420)와, 제 1, 2유량감지기(410, 420)로부터 유량값을 각각 전달받아 비교연산하여 밸브제어부(640)로 자동조절밸브(500)의 구동 신호를 보내는 비교제어부(600)로 구성될 수도 있다. In addition, the exhaust gas regulating device 800 includes a flow rate value from the first and second flow rate detectors 410 and 420 and the first and second flow rate detectors 410 and 420 installed to detect the flow rates of the inlet and the outlet of the exhaust line 120. It may be configured as a comparison control unit 600 to receive each of the comparison operation to send a drive signal of the automatic control valve 500 to the valve control unit 640.                     

또한, 배기조절장치(800)는 배기라인(120) 입구와 출구의 온도를 각각 감지하도록 설치된 제 1,2온도감지기(430, 440)와, 상기 제 1,2온도감지기(430, 440)로부터 온도값을 각각 전달받아 비교연산하여 밸브제어부(640)로 자동조절밸브(500)의 구동 신호를 보내는 비교제어부(600)로 구성될 수도 있다.In addition, the exhaust control apparatus 800 includes first and second temperature sensors 430 and 440 installed to sense temperatures of the inlet and the outlet of the exhaust line 120, respectively, and the first and second temperature sensors 430 and 440. The comparison control unit 600 may be configured to receive the temperature values and to perform a comparison operation to send a driving signal of the automatic control valve 500 to the valve control unit 640.

한편, 도면에는 도시되지 않았지만, 배기조절장치(800)에서 자동조절밸브(500) 대신 배기라인(120) 내부의 배기량 조절을 위해서 정/역방향 회전이 가능하고 내열성재질의 팬(Fan)이 설치될 수도 있다.On the other hand, although not shown in the drawings, instead of the automatic control valve 500 in the exhaust regulator 800 can be rotated forward / reverse and the heat-resistant material (Fan) can be installed to control the displacement in the exhaust line 120 It may be.

상기와 같이 구성되는 본 발명에 따른 실시예의 동작 및 작용을 설명하도록 한다.It will be described the operation and action of the embodiment according to the present invention configured as described above.

먼저, 도 2 및 도 3을 참조로 하여 본 고안의 제 1실시예에 대해서 설명하도록 한다.First, a first embodiment of the present invention will be described with reference to FIGS. 2 and 3.

상기와 같은 공정 진행 후, 반응로(100) 내부의 반응가스 및 열은 배기라인 (120)측으로 도시되지 않은 토출펌프에 의해서 배출된다.After the process as described above, the reaction gas and heat in the reactor 100 is discharged by the discharge pump not shown to the exhaust line 120 side.

이때, 배기라인(120) 입구측에 설치된 압력감지기(300)는 배기압을 측정하여 비교제어부(600)로 전달시켜주고, 비교제어부(600)는 기 설정된 압력값과 비교연산하여 자동조절밸브(500)를 구동시키는 신호를 밸브제어부(640)로 전달시킨다.At this time, the pressure sensor 300 installed at the inlet side of the exhaust line 120 measures the exhaust pressure and transmits the exhaust pressure to the comparison control unit 600, and the comparison control unit 600 compares the preset pressure value with an automatic control valve ( The signal for driving the 500 is transmitted to the valve control unit 640.

여기서, 기설정된 압력값보다 배기압이 높거나 낮은 경우, 밸브제어부(640)는 구동모터등의 동력수단(550)을 통해 회전판(510)을 회전시켜 배기라인(120) 유로를 개방 또는 폐쇄시킨다.Here, when the exhaust pressure is higher or lower than the predetermined pressure value, the valve control unit 640 rotates the rotating plate 510 through the power means 550 such as a drive motor to open or close the exhaust line 120 flow path. .

그럼으로써, 배기라인(120) 입구측의 압력이 변하게 되며, 그 압력값을 실시 간으로 비교제어부(600)로 전달시킨다.As a result, the pressure at the inlet side of the exhaust line 120 is changed, and the pressure value is transmitted to the comparison control unit 600 in real time.

이어서, 상기와 같은 동작을 통해 기 설정된 압력값과 배기압이 동일하게 되는 경우, 밸브제어부(640)는 동력수단(550)의 구동을 정지시켜 회전판(510) 동작을 중지시킨다.Subsequently, when the preset pressure value and the exhaust pressure become the same through the above operation, the valve control unit 640 stops the driving of the power means 550 to stop the operation of the rotating plate 510.

따라서, 배기라인(120) 입구 측과 출구측의 배기량이 동일하게 형성되어 일정한 배기흐름을 갖게 되고, 반응로(100) 내부와 배기라인(120) 내부의 배기온도가 일정하게 됨으로써 온도변화로 인한 장치 이상을 방지 할 수 있다.Therefore, the exhaust volume of the inlet side and the outlet side of the exhaust line 120 is formed to have the same exhaust flow, and the exhaust temperature of the reactor 100 and the exhaust line 120 is constant, resulting in a change in temperature. It can prevent the device abnormality.

또한, 반응가스와 열이 배기라인(120)을 통해 배출되는 도중 장치 이상으로 인해 압력감지기(300)로 부터 감지되는 압력값이 급격히 변동하는 경우 비교제어부(600)는 경보기(650)로 알람을 발생함과 동시에 전원부(700)로의 전원을 차단하여 공정을 중지시킨다.In addition, when the reaction gas and heat is discharged through the exhaust line 120, when the pressure value detected from the pressure sensor 300 suddenly fluctuates due to a device abnormality, the comparison controller 600 alarms the alarm 650. At the same time, the process is stopped by cutting off power to the power supply unit 700.

다음은 본 발명의 제 2실시예에 대해서 설명하도록 한다.Next, a second embodiment of the present invention will be described.

도 2를 참조 하면, 제 1, 2유량감지기(410, 420)는 배기라인(120) 입구와 출구의 내부에서 배기되는 반응가스의 배기량을 실시간으로 측정하여 비교제어부(600)로 전달시키고, 비교제어부(600)는 각각 전달받은 배기량을 전달받아 자동조절밸브(500)를 구동시킨다.Referring to FIG. 2, the first and second flow rate detectors 410 and 420 measure the discharge amount of the reaction gas exhausted from the inlet and the outlet of the exhaust line 120 in real time and transmit the measured amount to the comparison control unit 600. The control unit 600 receives the received displacement and drives the automatic control valve 500, respectively.

도 3을 참조 하면, 비교제어부(600)는 제 1, 2유량감지기(410, 420)로 전달받은 배기량값이 어느 한측이 높거나 낮은 경우, 밸브제어부(640)로 신호를 전달시켜 자동조절밸브(500)의 회전판(510)을 개방 또는 폐쇄시킨다.Referring to FIG. 3, the comparison control unit 600 transmits a signal to the valve control unit 640 when the displacement value received from the first and second flow rate detectors 410 and 420 is high or low, thereby automatically adjusting the valve. The rotary plate 510 of 500 is opened or closed.

상기와 같은 동작을 반복 수행하면서, 제 1,2유량감지기(410, 420)로부터 전 달받은 배기량값이 동일하게 되는 경우, 상기와 마찬가지로 자동조절밸브(500)의 구동을 중지시키게 된다.While repeatedly performing the above operation, when the displacement values transmitted from the first and second flow rate detectors 410 and 420 become equal, the driving of the automatic control valve 500 is stopped as described above.

또한, 반응로(100) 내부의 열과 배기가스가 모두 배기되면 비교제어부(600)는 경보기(650)로 소정의 신호를 보내 알람을 발생하고, 자동조절밸브(500)의 동작을 중지함과 아울러 공정을 중단시킨다.In addition, when both heat and exhaust gas inside the reactor 100 are exhausted, the comparison control unit 600 sends a predetermined signal to the alarm 650 to generate an alarm, and stops the operation of the automatic control valve 500. Stop the process.

다음은 본 발명의 제 3실시예를 설명하도록 한다.Next, a third embodiment of the present invention will be described.

도 2를 참조 하면, 배기라인(120) 입구와 출구측에 각각 설치된 제 1,2온도감지기(430, 440)는 배기되는 배기가스의 온도를 실시간 측정하여 비교제어부(600)로 전달시키고, 비교제어부(600)는 각각 측정된 온도를 비교연산하여 밸브제어부(640)를 통해 자동조절밸브(500)의 구동을 제어한다.Referring to FIG. 2, the first and second temperature sensors 430 and 440 respectively installed at the inlet and the outlet of the exhaust line 120 measure the temperature of the exhaust gas in real time and transmit the measured temperature to the comparison control unit 600. The control unit 600 controls the driving of the automatic control valve 500 through the valve control unit 640 by comparing the respective measured temperature.

따라서, 상기 제 1, 2실시예와 마찬가지로, 비교제어부(600)는 배기라인(120) 입구와 출구의 온도를 실시간으로 전달받아 각각 측정된 온도가 같아 질때까지 자동조절밸브(500)를 상기와 같이 구동시키고, 온도가 동일해지는 경우, 밸브제어부(640)를 통해 자동조절밸브(500)의 구동을 중지시킨다.Therefore, similar to the first and second embodiments, the comparison control unit 600 receives the temperature of the inlet and the outlet of the exhaust line 120 in real time, and automatically adjusts the valve 500 until the measured temperatures are the same. When driven together, and when the temperature is the same, the driving of the automatic control valve 500 through the valve control unit 640 is stopped.

그리고, 공정 이상발생시 경보기(650)의 작동과 아울러 공정이 중단된다.When the process abnormality occurs, the alarm 650 is operated and the process is stopped.

한편, 도면에 도시되지는 않았지만, 상기 제 1,2,3실시예에서의 배기량조절장치는 배기라인(120) 내부에 상기 자동조절밸브(500)를 설치하여 그 내부를 개폐하였지만, 배기가스의 배기량을 조절하기 위해 정/역방향 회전이 가능한 팬을 설치하여, 상기와 같은 비교제어부(600)의 동작에 따라 배기라인(120) 입구와 출구 측의 배기량을 일정하게 할 수도 있다. On the other hand, although not shown in the drawings, in the first, second, and third embodiments, the exhaust gas amount adjusting apparatus is provided with the automatic regulating valve 500 inside the exhaust line 120 to open and close the interior of the exhaust gas. In order to adjust the displacement, a fan capable of rotating in the forward / reverse direction may be installed, and the displacement of the inlet and the outlet of the exhaust line 120 may be constant according to the operation of the comparison control unit 600 as described above.                     

즉, 배기라인(120)의 입구와 출구측 중 어느 한측이 높거나 낮은 경우, 팬은 정방향 또는 역방향으로 회전하여 배기량이 동일해지는 경우 그 동작을 멈추도록 한다.That is, when either side of the inlet and outlet side of the exhaust line 120 is high or low, the fan rotates in the forward or reverse direction to stop the operation when the displacement is equal.

따라서, 본 발명의 배기조절장치를 갖는 반도체 제조설비에 의하면, 화학기상증착 공정후 반응로 내부에 형성된 열과 반응가스를 배출할 경우, 배기라인을 통해 일정한 배기량을 형성하며 배출되도록 실시간으로 제어가능한 배기조절 장치를 설치함으로써, 반응로 내부의 열 손실을 방지하여 공정불량을 방지하고, 제품수율을 향상 시킬 수 있다.Therefore, according to the semiconductor manufacturing equipment having the exhaust control apparatus of the present invention, when the heat and the reaction gas formed in the reactor after the chemical vapor deposition process, the exhaust gas that can be controlled in real time to form a certain amount of exhaust through the exhaust line By installing the control device, it is possible to prevent heat loss inside the reactor to prevent process defects and improve product yield.

공정 특성에 따라 배기량을 설정 가능하게 함으로써 열 및 반응가스를 배기한느 반도체 설비에 적용할 수 있다.The exhaust amount can be set in accordance with the process characteristics, so that it can be applied to semiconductor equipment which exhausts heat and reaction gas.

또한, 공정 진행중 설비 에러가 발생한 경우 즉시 공정을 중지하여 공수비용의 절감할 수 있다.In addition, when equipment error occurs during the process, the process can be stopped immediately to reduce the cost of man-hours.

Claims (4)

내부에 히터블럭이 설치되고, 복수매의 웨이퍼가 저장되는 반응로와;A reactor for installing a heater block therein and storing a plurality of wafers; 상기 반응로 내부에 소정의 반응가스를 공급하는 공급라인; 및A supply line for supplying a predetermined reaction gas into the reactor; And 상기 반응로 내부의 반응가스를 배출하는 배기라인을 포함하는 반도체 제조 설비에 있어서,In the semiconductor manufacturing equipment comprising an exhaust line for discharging the reaction gas inside the reactor, 상기 배기라인에 설치되어 상기 반응로 내부에서 소정의 공정 진행 후, 상기 반응가스를 배출할 경우 일정한 배기량을 유지하며 배출되도록 하는 배기조절장치가 설치된 것을 특징으로 하는 배기조절장치를 갖는 반도체 제조설비.The semiconductor manufacturing equipment having an exhaust control device is installed in the exhaust line, the exhaust control device is installed so as to maintain a constant exhaust amount when the reaction gas is discharged after the predetermined process in the reactor. 제 1항에 있어서,The method of claim 1, 상기 배기조절장치는 배기라인 내부에 설치되어 배기량을 제어하는 회전판이 형성된 자동조절밸브와, 상기 자동조절밸브의 회전판 동작을 제어하는 밸브제어부와, 상기 배기라인 입구의 압력을 감지하는 압력감지기와, 상기 압력감지기로 부터 소정의 압력값을 받아 기 설정된 압력값과 비교하여 상기 밸브제어부로 소정의 신호를 보내는 비교제어부를 포함하는 것을 특징으로 하는 배기조절장치를 갖는 반도체 제조설비.The exhaust control device includes an automatic control valve installed inside the exhaust line and having a rotating plate for controlling the displacement, a valve control unit for controlling the operation of the rotating plate of the automatic regulating valve, a pressure sensor for sensing the pressure at the inlet of the exhaust line; And a comparison control unit which receives a predetermined pressure value from the pressure sensor and compares it with a preset pressure value and sends a predetermined signal to the valve control unit. 제 2항에 있어서,The method of claim 2, 상기 배기조절장치는 상기 배기라인 입구와 출구의 유량을 감지하도록 설치 된 제 1,2유량감지기와, 상기 제 1, 2유량감지기로부터 유량값을 각각 전달받아 비교연산하여 상기 밸브제어부로 소정의 신호를 보내는 비교제어부로 구성된 것을 특징으로 하는 배기조절장치를 갖는 반도체 제조설비.The exhaust regulating device is a first and second flow rate sensor installed to detect the flow rate of the exhaust line inlet and outlet, and the flow rate value from the first and second flow rate sensor respectively received and compared to a predetermined signal to the valve control unit Semiconductor manufacturing equipment having an exhaust control device, characterized in that consisting of a comparison control unit for sending. 제 2항에 있어서,The method of claim 2, 상기 배기조절장치는 상기 배기라인 입구와 출구의 온도를 각각 감지하도록 설치된 제 1,2온도감지기와, 상기 제 1,2온도감지기로부터 온도값을 각각 전달받아 비교연산하여 상기 밸브제어부로 소정의 신호를 보내는 비교제어부로 구성된 것을 특징으로 하는 배기조절장치를 갖는 반도체 제조설비.The exhaust regulating device is a first and second temperature sensor installed to sense the temperature of the exhaust line inlet and outlet, respectively, and receives the temperature value from the first and second temperature sensor, respectively, compared and calculated a predetermined signal to the valve control unit Semiconductor manufacturing equipment having an exhaust control device, characterized in that consisting of a comparison control unit for sending.
KR1020040058462A 2004-07-26 2004-07-26 Semiconductor manufacturing equipment having an exhaust controller KR20060009773A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100883368B1 (en) * 2007-02-28 2009-02-12 세메스 주식회사 Exhaust unit and method for controlling displacement volume of the exhaust unit, and apparatus for treating substrate with the exhaust unit
KR100918382B1 (en) * 2007-10-05 2009-09-22 세메스 주식회사 Exhaust apparatus of semiconductor manufacturing equipment and method for setting thereof, and method for auto tunning it

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100883368B1 (en) * 2007-02-28 2009-02-12 세메스 주식회사 Exhaust unit and method for controlling displacement volume of the exhaust unit, and apparatus for treating substrate with the exhaust unit
KR100918382B1 (en) * 2007-10-05 2009-09-22 세메스 주식회사 Exhaust apparatus of semiconductor manufacturing equipment and method for setting thereof, and method for auto tunning it

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