KR20060007316A - Method for inspectioning defect in manufacturing process of semiconductor device - Google Patents

Abstract

The present invention relates to a method for detecting defects in the manufacture of semiconductor devices. More particularly, when the major axis critical dimension of the semiconductor device becomes small, the process of manufacturing a semiconductor device is detected by selectively removing a desired material and detecting defects through the presence or absence of a pattern. The present invention relates to a method for detecting defects in manufacturing a semiconductor device that can be followed up and prepared more quickly.

In the semiconductor device manufacturing defect detection method according to the present invention comprises the steps of depositing an oxide film on a silicon substrate divided into an active region and a device isolation region, etching the oxide film to form a plurality of contact holes in the predetermined region and Depositing and then planarizing the polysilicon to fill the contact hole, thereby forming a plurality of polysilicon structures between the oxide layers, and removing the material on the silicon substrate except for the polysilicon structures formed on the silicon substrate in the active region. Removing and comparing the number of polysilicon structures formed on the silicon substrate of the active region with the number of polysilicon structures previously formed.

Semiconductor element, defect, long axis, critical dimension, pattern presence

Description

Fault detection method in semiconductor device manufacturing {METHOD FOR INSPECTIONING DEFECT IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE}             

1A illustrates a semiconductor device formed at a normal long axis critical dimension.

1B illustrates an abnormal semiconductor device formed at a smaller major axis threshold.

2A through 2D are cross-sectional views illustrating a method of detecting a defect in manufacturing a semiconductor device according to the present invention.

3 is a view showing a patterned defect of a semiconductor device according to the present invention.

Description of the main parts of the drawing-

10, 110: silicon substrate 15, 115: device isolation film

20 gate oxide film 30 gate

A, A ': active region B, B': isolation region

120, 120 ': second oxide film

130: polysilicon D: Vacancy

The present invention relates to a method for detecting defects in the manufacture of semiconductor devices. More particularly, when the major axis critical dimension of the semiconductor device becomes small, the process of manufacturing a semiconductor device is detected by selectively removing a desired material and detecting defects through the presence or absence of a pattern. The present invention relates to a method for detecting defects in manufacturing a semiconductor device that can be followed up and prepared more quickly.

As the pattern becomes smaller in the semiconductor device manufacturing process, minimizing the effect on defects has become a key to ensuring yield.

Recently, the critical dimension of the device isolation region is reduced, which causes a problem in that the contact node portion on the active region is not opened in a subsequent process, thereby causing a serious damage to the electrical operation of the semiconductor device.

This will be described in more detail with reference to FIGS. 1A and 1B.

First, FIG. 1A illustrates a structure of a semiconductor device having a general device isolation long-axis critical dimension C. The silicon substrate 10 in which the active region A and the device isolation region B are separated by the device isolation layer 15. ), A gate oxide film 20 formed on the silicon substrate 10 of the active region A, and a plurality of gates 30 stably formed on the gate oxide film 20.                         

FIG. 1B is a view illustrating a structure of a semiconductor device having a small device isolation major axis (C ′). The silicon substrate in which the active region A and the device isolation region B are separated by the device isolation layer 15 is illustrated in FIG. 10), the gate oxide film 20 formed on the silicon substrate 10 of the active region A, and the plurality of gates 30 formed on the gate oxide film 20 toward the device isolation film 15 and being unstable. Consists of

As described above, when the device isolation long-axis critical dimension C 'is decreased, the gate is formed to be biased toward the device isolation layer 15 when forming the semiconductor device, and thus, the operation characteristic of the semiconductor device is deteriorated because a bridge is caused when the storage node contact is formed. There is a problem.

However, the conventional defect detection equipment has a problem that it is difficult to detect the defect (DEFECT) generated by the device separation long-axis critical dimension is small as described above.

Therefore, it takes a lot of time to stabilize the semiconductor manufacturing process, has been a problem in securing yield in a short time.

Therefore, the technical problem to be achieved by the present invention is to quickly remove the desired material when the long axis critical dimension of the semiconductor device is small, and to detect defects through the presence or absence of a pattern, so as to follow-up and countermeasures in the event of an abnormal manufacturing process of the semiconductor device. The present invention provides a method for detecting defects in manufacturing a semiconductor device capable of manufacturing the same.

In order to achieve the above technical problem, the present invention is a first step of depositing an oxide film on a silicon substrate in which the active region and the device isolation region is separated, and the etching of the oxide film to form a plurality of contact holes in the predetermined region A second step of depositing and planarizing polysilicon so that the contact hole is buried, and forming a plurality of polysilicon structures between the oxide layers, except for a polysilicon structure formed on the silicon substrate of the active region A fourth step of removing a material on a silicon substrate and a fifth step of comparing the number of polysilicon structures formed on the silicon substrate in the active region with the number of polysilicon structures previously formed. Provides a method for detecting defects in time.

In the method for detecting defects in manufacturing a semiconductor device of the present invention, the oxide film is characterized by being deposited to a thickness of 500 ~ 2000 ~.

In the method for detecting defects in manufacturing a semiconductor device of the present invention, the fourth step is characterized in that the removal of the oxide film through a cleaning process.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification.

2A through 2D are cross-sectional views illustrating a method of detecting a defect in manufacturing a semiconductor device of the present invention.

First, as shown in FIG. 2A, a pad oxide film (not shown) and a mask layer (not shown) are stacked on the silicon substrate 110 and a photoresist process is performed to form trenches (not shown) in a predetermined region of the silicon substrate 110. ).

In addition, by depositing and planarizing the first oxide layer to fill the trench (not shown), an isolation layer 115 is formed to distinguish the isolation region from the active region.

Next, as shown in FIG. 2B, the second oxide film 120 is deposited to a thickness of 500˜2000 μm on the silicon substrate 110 on which the device isolation film 115 is formed.

Subsequently, as shown in FIG. 2C, the second oxide layer 120 is patterned to form a plurality of storage node contact holes (not shown) in a predetermined region of the second oxide layer 120 ′.

After depositing the polysilicon 130 to fill the storage node contact hole (not shown), CMP planarization is performed using the second oxide film 120 'as a planarization stop film, thereby providing a pillar between the second oxide film 120'. The polysilicon structure 130 is formed.

Next, as shown in FIG. 2D, the second oxide film 120 ′ is removed through a cleaning process in a selective material removal process.

At this time, the chemical used in the cleaning process to remove the second oxide film 120 'penetrates into the first oxide film constituting the device isolation film 115, so that the first oxide film 120' In this case, the inside of the device isolation layer 115 is emptied by being removed together.

Therefore, the polysilicon structure 130 formed on the device isolation film 115 is removed together with the first oxide film removed during the cleaning process.

That is, since the polysilicon structure 130 to be present in the active region of the silicon substrate 110 is formed on the device isolation film 115, the device isolation film made of the first oxide film when the second oxide film 120 ′ is removed ( As the polysilicon structure 130 formed on the 115 is also removed, one of the four polysilicon structures 130 to be formed in advance is missing, resulting in three polysilicon structures 130 finally formed.

As such, the polysilicon structure formed on the silicon substrate 110 of the active region is removed by selectively removing an oxide film, which is a desired material, in order to detect a defect generated when the major axis critical dimension of the device isolation region is reduced. By removing all materials on the silicon substrate 110 except for 130, defects in the semiconductor device may be detected.

3 is a view looking down on the result formed by the above process can be seen that the defect occurred with or without the polysilicon pattern.

That is, as shown in FIG. 3, the polysilicon structure 130 formed on the device isolation layer 115 is removed together when the second oxide layer 120 ′ is removed, so that the polysilicon structure 130 is removed from the active region A of the silicon substrate 110. Since the polysilicon structure 130 of the space (vacancy: D) is to be formed where it is to be formed, it can be seen that a defect occurred in the portion without a pattern.

That is, the pattern defect can be detected through this.

As described above, according to the present invention, by selectively removing a desired material during fabrication of a semiconductor device and detecting a defect through the presence or absence of a pattern, a follow-up and a countermeasure can be taken more quickly when a manufacturing process abnormality occurs in the semiconductor device. There is an advantage.

Therefore, there is an effect that can quickly take measures and measures for the cause of defects in the process to bring about stabilization of the process and improvement of the YIELD.

Claims (3)

Depositing an oxide film on a silicon substrate in which an active region and a device isolation region are separated; Etching the oxide film to form a plurality of contact holes in a predetermined region; A third step of depositing and then planarizing the polysilicon to fill the contact hole to form a plurality of polysilicon structures between the oxide layers; A fourth step of removing a material on the silicon substrate except for the polysilicon structure formed on the silicon substrate in the active region; and A fifth step of comparing the number of polysilicon structures formed on the silicon substrate in the active region with the number of polysilicon structures previously formed; Defect detection method for manufacturing a semiconductor device comprising a. The method of claim 1, wherein the oxide film is deposited to a thickness of 500 to 2000 GPa. The method of claim 1, wherein the fourth step comprises removing an oxide film through a cleaning process.

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