KR20050121414A - 씨모스 이미지 센서 - Google Patents
씨모스 이미지 센서 Download PDFInfo
- Publication number
- KR20050121414A KR20050121414A KR1020040046537A KR20040046537A KR20050121414A KR 20050121414 A KR20050121414 A KR 20050121414A KR 1020040046537 A KR1020040046537 A KR 1020040046537A KR 20040046537 A KR20040046537 A KR 20040046537A KR 20050121414 A KR20050121414 A KR 20050121414A
- Authority
- KR
- South Korea
- Prior art keywords
- photodiode
- microlens
- image sensor
- color filter
- layer
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000011229 interlayer Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 4
- 239000011247 coating layer Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (3)
- 포토다이오드 및 금속 회로와 상기 금속 회로간 절연을 위한 층간 절연막들로 구성되는 하부층과,상기 하부층 상부에 형성된 R, G, B 컬러필터 어레이와,상기 컬러필터 어레이 상부에 형성된 오버 코팅층과,상기 오버 코팅층 상부에 형성된 마이크로 렌즈와,상기 하부층과 컬러필터 어레이 사이에 형성되며 상기 마이크로 렌즈보다 큰 곡률을 갖는 미소렌즈들로 구성된 미소렌즈 어레이를 포함하는 것을 특징으로 하는 씨모스 이미지 센서.
- 제 1항에 있어서,상기 하부층과 컬러필터 어레이 사이 형성되며 상기 포토다이오드 및 금속회로를 보호하기 위한 보호막과, 상기 보호막 상부에 형성된 제 1 평탄층을 더 포함하고, 상기 제 1 평탄층 상부에 상기 미소렌즈 어레이가 형성되는 것을 특징으로 하는 씨모스 이미지 센서.
- 제 2항에 있어서,상기 미소렌즈 어레이를 덮는 제 2 평탄화층을 더 포함하는 것을 특징으로 하는 씨모스 이미지 센서.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040046537A KR100685882B1 (ko) | 2004-06-22 | 2004-06-22 | 씨모스 이미지 센서 |
US11/020,526 US7262448B2 (en) | 2004-06-22 | 2004-12-27 | CMOS image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040046537A KR100685882B1 (ko) | 2004-06-22 | 2004-06-22 | 씨모스 이미지 센서 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050121414A true KR20050121414A (ko) | 2005-12-27 |
KR100685882B1 KR100685882B1 (ko) | 2007-02-23 |
Family
ID=35479765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040046537A KR100685882B1 (ko) | 2004-06-22 | 2004-06-22 | 씨모스 이미지 센서 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7262448B2 (ko) |
KR (1) | KR100685882B1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100593158B1 (ko) * | 2004-12-30 | 2006-06-26 | 매그나칩 반도체 유한회사 | 파리눈 렌즈를 갖는 이미지센서 및 그 제조 방법 |
KR100729736B1 (ko) * | 2005-12-28 | 2007-06-20 | 매그나칩 반도체 유한회사 | 이미지 센서 및 그 제조방법 |
KR100843561B1 (ko) * | 2007-05-08 | 2008-07-03 | (주)실리콘화일 | 고감도 포토다이오드를 구비한 이미지센서의 단위화소 |
KR100848945B1 (ko) * | 2007-01-19 | 2008-07-29 | 주식회사 디오스텍 | 주광선 손실을 보상하는 마이크로렌즈 어레이 및 이를포함하는 이미지센서 조립체 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6979588B2 (en) * | 2003-01-29 | 2005-12-27 | Hynix Semiconductor Inc. | Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity |
KR100769131B1 (ko) * | 2005-12-30 | 2007-10-23 | 동부일렉트로닉스 주식회사 | Cmos 이미지 센서의 제조 방법 |
KR100937654B1 (ko) * | 2006-12-12 | 2010-01-19 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
US20090101947A1 (en) * | 2007-10-17 | 2009-04-23 | Visera Technologies Company Limited | Image sensor device and fabrication method thereof |
US9419035B2 (en) | 2008-02-11 | 2016-08-16 | Omnivision Technologies, Inc. | Image sensor with color pixels having uniform light absorption depths |
US8097890B2 (en) * | 2008-02-11 | 2012-01-17 | Omnivision Technologies, Inc. | Image sensor with micro-lenses of varying focal lengths |
US7589306B2 (en) * | 2008-02-12 | 2009-09-15 | Omnivision Technologies, Inc. | Image sensor with buried self aligned focusing element |
CN102142468A (zh) * | 2010-12-17 | 2011-08-03 | 西南技术物理研究所 | 带光子陷阱的光电探测芯片 |
US20140183334A1 (en) * | 2013-01-03 | 2014-07-03 | Visera Technologies Company Limited | Image sensor for light field device and manufacturing method thereof |
TWI631373B (zh) | 2017-05-05 | 2018-08-01 | 友達光電股份有限公司 | 血管掃描系統及方法 |
US10665627B2 (en) | 2017-11-15 | 2020-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the image sensor device having a first lens and a second lens over the first lens |
KR20200108133A (ko) * | 2019-03-06 | 2020-09-17 | 삼성전자주식회사 | 이미지 센서 및 이미징 장치 |
KR20230032685A (ko) | 2021-08-31 | 2023-03-07 | 한국전자기술연구원 | 이미지 센서용 컬러 필터 렌즈 어레이 및 그 제조방법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020042098A (ko) * | 2000-11-30 | 2002-06-05 | 박종섭 | 이미지센서 및 그 제조 방법 |
TW513809B (en) * | 2002-02-07 | 2002-12-11 | United Microelectronics Corp | Method of fabricating an image sensor |
JP4383959B2 (ja) * | 2003-05-28 | 2009-12-16 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
-
2004
- 2004-06-22 KR KR1020040046537A patent/KR100685882B1/ko active IP Right Grant
- 2004-12-27 US US11/020,526 patent/US7262448B2/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100593158B1 (ko) * | 2004-12-30 | 2006-06-26 | 매그나칩 반도체 유한회사 | 파리눈 렌즈를 갖는 이미지센서 및 그 제조 방법 |
KR100729736B1 (ko) * | 2005-12-28 | 2007-06-20 | 매그나칩 반도체 유한회사 | 이미지 센서 및 그 제조방법 |
KR100848945B1 (ko) * | 2007-01-19 | 2008-07-29 | 주식회사 디오스텍 | 주광선 손실을 보상하는 마이크로렌즈 어레이 및 이를포함하는 이미지센서 조립체 |
KR100843561B1 (ko) * | 2007-05-08 | 2008-07-03 | (주)실리콘화일 | 고감도 포토다이오드를 구비한 이미지센서의 단위화소 |
Also Published As
Publication number | Publication date |
---|---|
KR100685882B1 (ko) | 2007-02-23 |
US20050280108A1 (en) | 2005-12-22 |
US7262448B2 (en) | 2007-08-28 |
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