KR20050118446A - A method for manufacturing the lcd - Google Patents
A method for manufacturing the lcd Download PDFInfo
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- KR20050118446A KR20050118446A KR1020040043571A KR20040043571A KR20050118446A KR 20050118446 A KR20050118446 A KR 20050118446A KR 1020040043571 A KR1020040043571 A KR 1020040043571A KR 20040043571 A KR20040043571 A KR 20040043571A KR 20050118446 A KR20050118446 A KR 20050118446A
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- film
- liquid crystal
- crystal display
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- thin film
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- 238000004519 manufacturing process Methods 0.000 title abstract description 24
- 238000000034 method Methods 0.000 title description 27
- 239000010408 film Substances 0.000 claims abstract description 72
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000001681 protective effect Effects 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 28
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/42—Arrangements for providing conduction through an insulating substrate
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
본 발명은 박막트랜지스터의 상부에 화소 전극용 ITO(Indium Tin Oxide)가 잔류하는 것을 방지할 수 있는 액정표시장치 제조 방법을 개시한다. The present invention discloses a method of manufacturing a liquid crystal display device capable of preventing the indium tin oxide (ITO) for pixel electrodes from remaining on the thin film transistor.
개시된 본 발명의 액정표시장치 제조 방법은 박막트랜지스터가 형성된 투명성 절연기판을 제공하는 단계와 상기 박막트랜지스터를 덮도록 상기 투명성 절연기판 전면 상에 보호막을 형성하는 단계와 상기 보호막을 식각하여 박막트랜지스터의 일부분을 노출시키는 콘택홀을 형성하는 단계와 상기 콘택홀이 형성된 상기 보호막 상에 상기 박막트랜지스터를 가리는 감광막을 형성하는 단계와 상기 감광막 및 상기 보호막 상에 ITO막을 형성하는 단계와 상기 감광막 및 그 상부의 ITO막 부분을 제거함과 아울러 화소 전극을 형성하는 단계를 포함하는 것을 특징으로 한다. According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display, including providing a transparent insulating substrate on which a thin film transistor is formed, forming a protective film on the entire surface of the transparent insulating substrate so as to cover the thin film transistor, and etching the protective film to form a portion of the thin film transistor. Forming a contact hole exposing the contact hole; forming a photoresist film covering the thin film transistor on the protective film on which the contact hole is formed; forming an ITO film on the photoresist film and the protective film; And removing the film portion to form the pixel electrode.
Description
본 발명은 액정 표시 장치 제조 방법에 관한 것으로, 특히, 박막트랜지스터 상부에 ITO(Indium Tin Oxide)를 완전히 제거하는 액정표시장치 제조 방법에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display, and more particularly, to a method for manufacturing a liquid crystal display that completely removes indium tin oxide (ITO) on a thin film transistor.
액정표시장치는 경박단소하고 저전압구동 및 저전력 소모라는 장점을 바탕으로 CRT(Cathod Ray Tube)를 대신하여 개발되어져 왔으며, 특히, 박막트랜지스터 액정표시장치는 CRT에 필적할만한 고화질화, 대형화, 컬러화 등을 실현하여 최근 여러 분야에서 다양하게 사용되고 있다. Liquid crystal displays have been developed in place of CRT (Cathod Ray Tube) on the basis of the advantages of low weight, low voltage driving and low power consumption. In particular, the thin film transistor liquid crystal display realizes high quality, large size, and color comparable to CRT. Recently used in various fields.
이러한 액정표시장치는 박막트랜지스터 및 화소 전극이 형성된 어레이 기판과, 컬러필터 및 상대 전극이 형성된 컬러필터 기판이 액정층의 개재하에 합착된 구조를 갖는다. The liquid crystal display device has a structure in which an array substrate on which a thin film transistor and a pixel electrode are formed, and a color filter substrate on which a color filter and a counter electrode are formed are bonded to each other under an intervening liquid crystal layer.
한편, 이와 같은 액정표시장치에 있어서, 제조 공정 수, 특히, 어레이 기판의 제조 공정 수를 감소시키는 것은 매우 중요하다. 그 이유는 제조 공정 수를 줄일수록 액정표시장치의 제조 비용을 감소시킬 수 있기 때문이다. 이러한 제조 공정 수를 감소시키기 위한 방법으로 백 채널 에치(Back Channel Etch) 구조의 박막트랜지스터를 갖는 어레이 기판 제조방법이 제안되었다. On the other hand, in such a liquid crystal display device, it is very important to reduce the number of manufacturing steps, in particular, the number of manufacturing steps of the array substrate. The reason is that as the number of manufacturing processes is reduced, the manufacturing cost of the liquid crystal display device can be reduced. As a method for reducing the number of manufacturing processes, a method of manufacturing an array substrate having a thin film transistor having a back channel etch structure has been proposed.
이하에서는 도 1a 및 도 1b 를 참조하여 종래 액정표시장치 제조 방법에 대하여 간략히 설명하도록 한다. Hereinafter, a method of manufacturing a conventional liquid crystal display device will be briefly described with reference to FIGS. 1A and 1B.
도 1a 를 참조하면, 유리기판(111)상에 게이트 전극(112)을 형성한 후, 게이트 절연막(113)을 형성한다. 그런 다음, 액티브층(114)을 형성하고, 액티브층(114) 상에 소스-드래인 전극(115)을 형성한다. 이렇게 박막트랜지스터(이하, TFT 라고 함.)가 형성되면, TFT 보호를 위해 보호막(116)을 형성한 후, 보호막(116)을 식각하여 소스-드래인 전극(115)을 노출시키는 콘택홀(117)을 형성하고, 보호막(116) 상에 ITO막(118)을 증착한다.Referring to FIG. 1A, after the gate electrode 112 is formed on the glass substrate 111, the gate insulating layer 113 is formed. Then, the active layer 114 is formed, and the source-drain electrode 115 is formed on the active layer 114. When the thin film transistor (hereinafter referred to as TFT) is formed, the protective layer 116 is formed to protect the TFT, and then the protective layer 116 is etched to expose the contact-drain electrode 115 to expose the source-drain electrode 115. ) And the ITO film 118 is deposited on the protective film 116.
도 1b 를 참조하면, 포토리소그래피(photolithograph) 공정으로 ITO막을 패터닝한 후 식각하여 화소전극(118a)을 형성한다. 이후 공지된 후속 공정을 수행하여 액정표시장치를 완성한다. Referring to FIG. 1B, the ITO film is patterned and etched by a photolithograph process to form a pixel electrode 118a. Thereafter, a known subsequent process is performed to complete the liquid crystal display.
그러나, 전술한 종래의 방법과 같이, ITO막(118)을 증착하고, 이어서, 포토리소그래피(photolithograph) 공정으로 ITO막(118)을 패터닝한 후 식각하여 화소 전극(118a)을 형성할 경우, TFT 상부에 형성된 ITO막(118b)이 완전히 제거되지 않고 잔류할 수 있다. 이렇게 제거되지 않은 ITO막(118b)은 액정표시장치가 동작할 때 TFT의 채널 영역에 전자를 응집하여 누설전류를 흐르게 한다. However, as in the conventional method described above, when the ITO film 118 is deposited, and then the ITO film 118 is patterned and then etched by a photolithograph process to form the pixel electrode 118a, the TFT is formed. The ITO film 118b formed thereon may remain without being completely removed. The ITO film 118b not thus removed causes the leakage current to flow by agglomerating electrons in the channel region of the TFT when the liquid crystal display device operates.
그러므로 제거되지 않은 ITO막(118b)을 제거하기 위해 추가적인 공정을 요구하게 되고, 이러한 추가적인 공정은 액정표시장치 제작의 시간과 경비가 증가되는 문제가 발생할 수 있다. Therefore, an additional process is required to remove the not removed ITO film 118b, and this additional process may cause a problem in that the time and cost of manufacturing the liquid crystal display device are increased.
따라서, 본 발명은 전술한 종래 문제점을 해결하기 위하여 제안된 것으로서, ITO막을 증착하여 화소 전극을 형성하는 방법을 개선시킴으로써 액정표시장치 제작 시간과 경비를 감소시키며, 고품질의 액정표시장치를 제작할 수 있는 액정표시장치 제조 방법을 제공함에 그 목적이 있다. Accordingly, the present invention has been proposed to solve the above-mentioned conventional problems, and it is possible to reduce the manufacturing time and cost of the liquid crystal display device by improving the method of forming a pixel electrode by depositing an ITO film, and to manufacture a high quality liquid crystal display device. It is an object of the present invention to provide a method for manufacturing a liquid crystal display device.
전술한 바와 같은 목적을 달성하기 위하여 본 발명에 따른 액정표시장치 제조 방법은, 박막트랜지스터가 형성된 투명성 절연기판을 제공하는 단계; 상기 박막트랜지스터를 덮도록 상기 투명성 절연기판 전면 상에 보호막을 형성하는 단계; 상기 보호막을 식각하여 박막트랜지스터의 일부분을 노출시키는 콘택홀을 형성하는 단계; 상기 콘택홀이 형성된 상기 보호막 상에 상기 박막트랜지스터를 가리는 감광막을 형성하는 단계; 상기 감광막 및 상기 보호막 상에 ITO막을 형성하는 단계; 상기 감광막 및 그 상부의 ITO막 부분을 제거함과 아울러 화소 전극을 형성하는 단계를 포함한다. According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, the method including: providing a transparent insulating substrate on which a thin film transistor is formed; Forming a protective film on an entire surface of the transparent insulating substrate so as to cover the thin film transistor; Etching the passivation layer to form a contact hole exposing a portion of the thin film transistor; Forming a photoresist covering the thin film transistor on the passivation layer on which the contact hole is formed; Forming an ITO film on the photosensitive film and the protective film; Removing the photoresist film and the portion of the ITO film thereon, and forming a pixel electrode.
(실시예)(Example)
이하, 도면을 참조하여 본 발명에 따른 실시예에 대하여 보다 구체적으로 설명하기로 한다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2a 및 도 2b 는 본 발명에 따른 액정표시장치 제조 방법을 설명하기 위한 공정별 단면도이다.2A and 2B are cross-sectional views of processes for describing a method of manufacturing a liquid crystal display according to the present invention.
도 2a 를 참조하면, 유리기판(211) 상에 게이트 금속막을 증착한 후, 포토리소그래피(photolithograph) 공정으로 게이트 금속막을 패터닝한 후 식각하여 게이트 전극(212)을 형성한다. 그 다음, 게이트 전극(212)을 덮도록 유리기판(211)의 전 영역 상에 게이트 절연막(213)을 증착한 후, 게이트 절연막(213) 상에 차례로 a-Si막과 n+ a-Si막을 증착하고, 이어서, 포토리소그래피 공정으로 n+ a-Si막과 a-Si막을 패터닝한 후 식각하여 액티브층(214)을 형성한다. Referring to FIG. 2A, after the gate metal film is deposited on the glass substrate 211, the gate metal film is patterned and etched by a photolithograph process to form a gate electrode 212. After that, the gate insulating film 213 is deposited on the entire region of the glass substrate 211 so as to cover the gate electrode 212, and then the a-Si film and the n + a-Si film are sequentially deposited on the gate insulating film 213. Subsequently, the n + a-Si film and the a-Si film are patterned and etched by a photolithography process to form an active layer 214.
그 후, 액티브층(214)을 포함한 게이트 절연막(213) 상에 소스-드레인 금속막을 증착하고, 그런 다음, 포토리소그래피 공정으로 소스-드래인 금속막을 패터닝하고 식각하여 소스-드레인 전극(215)을 형성하고, 이를 통해, 유리기판(211)에 TFT를 구성한다. Thereafter, a source-drain metal film is deposited on the gate insulating film 213 including the active layer 214, and then the source-drain metal film is patterned and etched by a photolithography process to etch the source-drain electrode 215. The TFT is formed on the glass substrate 211.
이어서, 소스-드레인 전극(215)을 덮도록 유리기판(211) 전 영역 상에 보호막(216)을 증착한다. 그 후, 보호막(216)을 식각하여 소스-드래인 전극(215)을 노출시키는 콘택홀(217)을 형성한다.Subsequently, the protective film 216 is deposited on the entire area of the glass substrate 211 so as to cover the source-drain electrode 215. Thereafter, the protective film 216 is etched to form a contact hole 217 exposing the source-drain electrode 215.
그런 다음, 보호막(216) 전 영역 상에 감광막을 도포한다. 이어서, 화소 영역이 패터닝된 포토 마스크(미도시)를 이용해서 감광막을 노광한 후, 이를 현상하여 채널을 덮도록 TFT 상부에 감광막(218)을 형성한다. 이렇게 화소 영역을 패터닝 하는 포토리소그래피 공정을 한 후 감광막(218)을 포함한 유리기판(211) 전 영역 상에 ITO막(219, 219a)을 증착한다. 이때, 감광막 패턴(218)의 측벽에는 ITO막이 증착되지 않으며, 단지, 감광막 패턴(218) 상부에만 증착되고, 또한, 감광막 패턴(218)이 존재하지 않는 화소 영역 상에 증착된다. Then, a photosensitive film is coated on the entire area of the protective film 216. Subsequently, after the photoresist film is exposed using a photo mask (not shown) in which the pixel region is patterned, the photoresist film 218 is formed on the TFT to cover the channel by developing the photoresist film. After the photolithography process of patterning the pixel region, the ITO films 219 and 219a are deposited on the entire area of the glass substrate 211 including the photosensitive film 218. At this time, the ITO film is not deposited on the sidewalls of the photoresist pattern 218, but is deposited only on the photoresist pattern 218 and on the pixel region where the photoresist pattern 218 is not present.
도 2b 를 참조하면, 형성된 감광막을 감광막 스트립(strip) 공정을 통해 제거한다. 이때, 감광막 스트립을 통해 감광막을 제거하면, 감광막 상부에 증착된 ITO막이 함께 제거되며, 이에 따라, 화소 영역 상에는 화소 전극(219)이 형성되고, 이후 공지된 후속 공정을 수행하여 액정표시장치를 완성한다. Referring to FIG. 2B, the formed photoresist film is removed through a photoresist strip process. In this case, when the photoresist film is removed through the photoresist strip, the ITO film deposited on the photoresist film is removed together. Accordingly, the pixel electrode 219 is formed on the pixel region, and then a known subsequent process is performed to complete the liquid crystal display device. do.
이하에서는 본 발명에 따른 액정표시장치 제조 방법과 종래의 액정표시장치 제조 방법의 차이에 대하여 간략히 설명하도록 한다. Hereinafter, the difference between the liquid crystal display device manufacturing method and the conventional liquid crystal display device manufacturing method according to the present invention will be briefly described.
우선, 종래의 방법에서는 콘택홀을 형성한 후 ITO막을 증착한다, 그런 다음, 포토리소그래피 공정으로 ITO막을 패터닝한 후 식각하여 화소 전극을 형성하는 방법으로 액정표시장치를 제조하였다. 그 결과, ITO막 식각 시 TFT 상부에 증착된 ITO막이 완전히 제거되지 않을 수 있다. 이렇게 제거되지 않은 ITO막을 완전히 제거하기 위해 추가적인 공정을 필요로 한다. First, in the conventional method, a contact hole is formed and an ITO film is deposited. Then, a liquid crystal display device is manufactured by forming a pixel electrode by patterning and etching the ITO film by a photolithography process. As a result, the ITO film deposited on the TFT may not be completely removed when the ITO film is etched. An additional process is required to completely remove the ITO film that has not been removed.
그러나, 본 발명에 따른 방법에서는 콘택홀을 형성한 후 포토리소그래피 공정을 하여 감광막을 형성한다. 그런 다음, ITO막을 증착한 후 감광막을 제거하면 감광막 상부에 증착된 ITO막 또한 동시에 제거된다. 그 결과, 감광막에 의해 TFT 상부에 증착된 ITO막은 완전히 제거되며, TFT 상부에 잔류하는 ITO막 제거 공정을 생략할 수 있다. However, in the method according to the present invention, after forming contact holes, a photolithography process is performed to form a photoresist film. Then, when the photoresist film is removed after depositing the ITO film, the ITO film deposited on the photoresist film is also removed at the same time. As a result, the ITO film deposited on the TFT by the photosensitive film is completely removed, and the ITO film removing process remaining on the TFT can be omitted.
이상에서 알 수 있는 바와 같이, 본 발명은 액정표시장치 제조 공정에 있어서 TFT 상부에 형성된 ITO막을 완전히 제거함으로써 고품질의 액정 표시 장치를 제작할 수 있다. 또한, TFT 상부에 잔류하는 ITO막 제거를 위한 추가적인 공정을 생략함으로써 액정표시장치의 제조 시간과 비용을 감소시킬 수 있다. As can be seen from the above, the present invention can produce a high quality liquid crystal display device by completely removing the ITO film formed on the TFT in the liquid crystal display device manufacturing process. In addition, it is possible to reduce the manufacturing time and cost of the liquid crystal display by omitting an additional process for removing the ITO film remaining on the TFT.
도 1a 및 도 1b 는 종래의 액정표시장치 제조 방법을 설명하기 위한 공정별 단면도. 1A and 1B are cross-sectional views of processes for explaining a conventional method of manufacturing a liquid crystal display device.
도 2a 및 도 2b 는 본 발명에 따른 액정표시장치 제조 방법을 설명하기 위한 공정별 단면도. 2A and 2B are cross-sectional views of processes for explaining a method of manufacturing a liquid crystal display device according to the present invention.
- 도면의 주요부분에 대한 부호의 설명 - -Explanation of symbols for the main parts of the drawings-
111, 211 : 유리기판 112, 212 : 게이트 전극111, 211: glass substrate 112, 212: gate electrode
113, 213 : 게이트 절연막 114, 214 : 액티브층113, 213: gate insulating film 114, 214: active layer
115, 215 : 소스-드래인 전극 116, 216 : 보호막 115, 215: source-drain electrodes 116, 216: protective film
117, 217 : 콘택홀 118, 118a, 118b, 219, 219a : ITO막117, 217: contact hole 118, 118a, 118b, 219, 219a: ITO film
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