KR20050099709A - Method for washing capillary of wire bonding process - Google Patents
Method for washing capillary of wire bonding process Download PDFInfo
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- KR20050099709A KR20050099709A KR1020040024882A KR20040024882A KR20050099709A KR 20050099709 A KR20050099709 A KR 20050099709A KR 1020040024882 A KR1020040024882 A KR 1020040024882A KR 20040024882 A KR20040024882 A KR 20040024882A KR 20050099709 A KR20050099709 A KR 20050099709A
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- capillary
- wire bonding
- bonding process
- aqua regia
- water
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000005406 washing Methods 0.000 title claims abstract description 12
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 21
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 238000007598 dipping method Methods 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 7
- 238000003287 bathing Methods 0.000 claims abstract description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- PYKNDCILXQWMJP-UHFFFAOYSA-N azane;chromium(3+) Chemical compound N.[Cr+3] PYKNDCILXQWMJP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229940117975 chromium trioxide Drugs 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000010979 ruby Substances 0.000 abstract description 3
- 229910001750 ruby Inorganic materials 0.000 abstract description 3
- 239000000945 filler Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01H—SPINNING OR TWISTING
- D01H7/00—Spinning or twisting arrangements
- D01H7/02—Spinning or twisting arrangements for imparting permanent twist
- D01H7/86—Multiple-twist arrangements, e.g. two-for-one twisting devices ; Threading of yarn; Devices in hollow spindles for imparting false twist
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01H—SPINNING OR TWISTING
- D01H13/00—Other common constructional features, details or accessories
- D01H13/04—Guides for slivers, rovings, or yarns; Smoothing dies
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01H—SPINNING OR TWISTING
- D01H13/00—Other common constructional features, details or accessories
- D01H13/10—Tension devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7801—Means for cleaning, e.g. brushes, for hydro blasting, for ultrasonic cleaning, for dry ice blasting, using gas-flow, by etching, by applying flux or plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Textile Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
본 발명은 와이어본딩 공정의 캐필러리 세척방법에 관한 것으로, 루비(ruby)계 캐필러리(capillary)를 염산과 질산이 혼합된 왕수(王水)에 담그는 배딩(bathing)단계와, 그 캐필러리를 DI워터(deionized water)에 담그는 클리닝(cleaning)단계와, 그 캐필러리를 건조시키는 건조단계를 포함하는 것을 특징으로 한다.The present invention relates to a capillary washing method of a wire bonding process, comprising: a bathing step of dipping a ruby-based capillary in aqua regia mixed with hydrochloric acid and nitric acid; And a cleaning step of dipping the filler in DI water and a drying step of drying the capillary.
이에 따라, 그 캐필러리 내에 존재하던 와이어 찌끄러기 등의 이물질이 완전히 제거될 수 있으므로, 캐필러리의 재사용이 가능하게 되어 반도체 제조공정의 제조비용이 저감된다.As a result, foreign matters such as wire debris existing in the capillary can be completely removed, so that the capillary can be reused and the manufacturing cost of the semiconductor manufacturing process is reduced.
Description
본 발명은 와이어본딩 공정의 캐필러리 세척방법에 관한 것으로, 더욱 자세하게는 반도체 제조공정중에서 와이어를 사용하여 리드프레임과 반도체칩의 칩패드 사이를 전기적으로 연결시키는 캐필러리의 세척방법에 관한 것이다. The present invention relates to a capillary cleaning method of a wire bonding process, and more particularly, to a capillary cleaning method for electrically connecting a lead frame and a chip pad of a semiconductor chip using a wire during a semiconductor manufacturing process.
반도체 패키지의 제조공정은 통상적으로 웨이퍼에 포함된 각각의 반도체칩의 불량을 체크하는 웨이퍼검사공정, 웨이퍼를 절단하여 반도체칩을 낱개로 분리하는 소잉공정, 낱개로 분리된 반도체칩을 리드프레임의 탑재판에 부착시키는 다이본딩 공정, 반도체칩상에 구비된 칩패드와 리드프레임의 리드를 와이어로 연결시켜주는 와이어본딩공정, 반도체칩의 내부회로와 그 외의 구성부품을 보호하기 위하여 봉지재로 외부를 감싸는 몰딩공정, 완성된 패키지의 불량을 검사하는 완성품 검사공정 등을 거치게 된다.The semiconductor package manufacturing process typically includes a wafer inspection process for checking defects in each semiconductor chip included in the wafer, a sawing process for cutting the wafer into pieces, and mounting of the separated semiconductor chips into the lead frame. Die bonding process to attach to plate, wire bonding process to connect lead of chip pad and lead frame provided on semiconductor chip with wire, and to surround the outside with encapsulant to protect internal circuit and other components of semiconductor chip. It goes through the molding process and the finished product inspection process to inspect the defect of the finished package.
이러한 제조공정중 와이어본딩 공정은 캐필러리(capillary)를 사용하여 리드프레임과 반도체칩의 칩패드를 금선(gold wire) 등을 사용하여 전기적으로 연결시키는 공정이다. 종래에는 와이어본딩 공정에서 캐필러리는 알루미나(Al2O3)가 함유된 세라믹계 캐필러리가 통상 사용되고 있다.The wire bonding process of the manufacturing process is a process of electrically connecting the lead frame and the chip pad of the semiconductor chip using a gold wire or the like using capillary. Conventionally, the capillary in the wire bonding process is a ceramic-based capillary containing alumina (Al 2 O 3 ) is commonly used.
그러나 이 경우 와이어본딩 작업시 캐필러리내 와이어 관통홀의 내경 보다 미세한 이물질이 캐필러리 내부에 쌓일 때에는 와이어 볼을 형성하는 와이어의 테일이 제대로 형성되지 않아 와이어 브레이크가 발생하거나, 테일이 짧은 경우 토치 스파크로 볼을 형성할 때 작게 형성되어 반도체의 품질이 저하되는데 이러한 이물질을 제거하기 위한 특별한 방법이 제시되지 않고 있으며, 단지 캐필러리의 팁(tip) 부분을 그라인딩(grinding)하여 이물질과 팁 부분을 모두 제거하는 방법이 제시되고 있다. 하지만 이러한 그라인딩 횟수도 수회내로 제한되므로 궁극적인 이물질 제거의 대안이 되지 못하고 있어, 캐필러리의 수명단축을 가져와 반도체 제조공정의 원자재 비용을 상승시키는 문제점이 있다. However, in this case, when a finer foreign matter than the inner diameter of the wire through hole in the capillary accumulates inside the capillary, the tail of the wire forming the wire ball is not formed properly, and the wire break occurs or the torch spark is short. When the ball is formed, it is formed small and the quality of the semiconductor is deteriorated. There is no special method for removing such foreign matters, and only the tip portion of the capillary is ground to grind both the foreign matter and the tip portion. A method of removal is suggested. However, since the number of grinding is limited to several times, it is not an alternative to ultimate removal of foreign substances, resulting in shortening the life of the capillary and increasing the raw material cost of the semiconductor manufacturing process.
따라서 본 발명은 캐필러리내의 이물질이 용이하게 제거될 수 있도록 개선된 와이어본딩 공정의 캐필러리 세척방법을 제공하는데 목적이 있다. Accordingly, an object of the present invention is to provide a capillary cleaning method of an improved wire bonding process so that foreign matter in the capillary can be easily removed.
본 발명에 따른 와이어본딩 공정의 캐필러리 세척방법은, (A) 알루미나(Al2O3) 및 크로뮴트리옥사이드(Cr2O3)로 이루어진 암모늄크롬을 함유하는 와이어본딩 공정의 캐필러리(capillary)를 염산과 질산이 혼합된 왕수(王水)에 담그는 배딩(bathing)단계; (B) 그 캐필러리를 그 왕수에서 꺼낸 후, DI워터(deionized water)에 담그는 클리닝(cleaning)단계; 및 (C) 그 캐필러리를 그 DI워터에서 꺼낸 후, 그 캐필러리를 건조시키는 건조단계;를 포함하는 것을 특징으로 한다.The capillary washing method of the wire bonding process according to the present invention, (A) capillary of the wire bonding process containing ammonium chromium consisting of alumina (Al 2 O 3 ) and chromium trioxide (Cr 2 O 3 ) ( bathing step of dipping capillary in aqua regia mixed with hydrochloric acid and nitric acid; (B) a cleaning step of removing the capillary from the aqua regia and dipping in DI water (deionized water); And (C) taking out the capillary from the DI water and drying the capillary.
본 발명의 바람직한 실시예에 따르면, 그 왕수는 염산과 질산이 3:1의 부피비로 혼합된 것을 특징으로 한다. According to a preferred embodiment of the present invention, the aqua regia is characterized in that hydrochloric acid and nitric acid are mixed in a volume ratio of 3: 1.
본 발명의 바람직한 실시예에 따르면, 전술한 (A)단계는, 그 캐필러리를 그 왕수에 20~40분 사이의 시간 동안 담가두는 것을 특징으로 한다.According to a preferred embodiment of the present invention, step (A) described above is characterized in that the capillary is immersed in the aqua regia for 20 to 40 minutes.
본 발명의 바람직한 실시예에 따르면, 전술한 (B)단계는, 고무재질인 러버 클램퍼(rubber clamper)로 그 캐필러리를 고정시키는 단계를 포함하는 것을 특징으로 한다. According to a preferred embodiment of the present invention, the above-mentioned step (B) is characterized in that it comprises a step of fixing the capillary with a rubber clamp (rubber clamper) made of rubber material.
본 발명의 바람직한 실시예에 따르면, 전술한 (C)단계는, 그 캐필러리를 150~200℃ 사이의 온도에서 건조시키는 것을 특징으로 한다. According to a preferred embodiment of the present invention, the above-mentioned step (C) is characterized in that the capillary is dried at a temperature between 150 ~ 200 ℃.
이하에서는 첨부된 도면을 참조하여 본 발명에 따른 와이어본딩 공정의 캐필러리 세척방법을 자세하게 설명한다. Hereinafter, with reference to the accompanying drawings will be described in detail the capillary washing method of the wire bonding process according to the present invention.
도 1 내지 도 3은 각각 본 발명에 따른 와이어본딩 공정의 캐필러리 세척방법을 나타낸 정면도이다.1 to 3 are each a front view showing a capillary washing method of the wire bonding process according to the present invention.
먼저, 도 1에서와 같이, 캐필러리(1)를 왕수(21)에 담그는 배딩(bathing)단계를 실시한다. 캐필러리(1)는 알루미나(Al2O3) 및 크로뮴트리옥사이드(Cr2 O3)을 포함하는 암모늄크롬으로 이루어진 루비(ruby)계 캐필러리를 포함한다. 왕수(21)는 염산과 질산이 3:1의 부피비로 혼합되어 왕수용기(1)에 채워진다. 왕수(21)에 담겨진 캐필러리(1)는 그 내부 특히 와이어 관통홀(1a)에 잔존해 있는 와이어 찌끄러기 등의 이물질이 왕수(21)에 의해 녹아서 제거된다. 이러한 이물질이 금(金) 또는 은(銀)이더라도 왕수(21)에 녹는다. 캐필러리(1)는 왕수(21)에 20~40분 사이의 시간 동안 담가진다. 바람직하게는 캐필러리(1)가 왕수(21)에 30분 동안 담가지도록 한다. 이물질은 녹아 제거되지만 캐필러리(1)는 전술한 재질 특성상 왕수(21)에 녹지 않는다. 본 단계를 여러 차례 거친 왕수(21)는 이물질이 많이 녹아 있게 되므로, 이물질 제거의 효율성을 높이기 위해 주기적으로 새로운 것으로 갈아주는 것이 바람직하다.First, as shown in FIG. 1, a bathing step of dipping the capillary 1 in the aqua regia 21 is performed. The capillary 1 includes a ruby-based capillary composed of ammonium chromium including alumina (Al 2 O 3 ) and chromium trioxide (Cr 2 O 3 ). The aqua regia 21 is mixed with hydrochloric acid and nitric acid in a volume ratio of 3: 1 and filled in the aqua receptacle 1. In the capillary 1 contained in the aqua regia 21, foreign substances such as wire debris remaining in the inside of the wire through-hole 1a are dissolved by the aqua regia 21 and removed. Even if these foreign matters are gold or silver, they melt in the aqua regia 21. The capillary 1 is soaked in the aqua regia 21 for a time between 20-40 minutes. Preferably, the capillary 1 is soaked in the aqua regia 21 for 30 minutes. The foreign matter is removed by melting, but the capillary 1 does not melt in the aqua regia 21 due to the above-described material characteristics. The aqua regia 21 which has undergone this step several times has a large amount of foreign matter melted, and it is desirable to periodically change the new one to increase the efficiency of removing the foreign matter.
다음으로, 캐필러리(1)를 왕수(21)에서 꺼낸다. Next, the capillary 1 is taken out from the aqua regia 21.
다음으로, 도 2에서와 같이, 캐필러리(1)를 DI워터(deionized water)(22)에 담그는 클리닝(cleaning)단계를 실시한다. DI워터(22)는 워터용기(12)에 채워진다. DI워터(22)로서 이온성분이 제거된 순수한 물을 사용하는 것이 바람직하다. 캐필러리(1)는 고무재질로 이루어진 러버 클램퍼(rubber clamper)(13)에 의해 고정되어 DI워터(22)에 담겨질 수도 있다. 러버 클램퍼(13)는 C1 및 C2방향으로 캐필러리(1)를 가압하여 고정시킨다. 도면에는 나타내지 않았지만, 본 클리닝 단계의 효율성을 높이기 위하여 DI워터(22)에 초음파 진동을 가할 수도 있다. 이로써 캐필러리(1)에 묻어있던 잔여 이물질 및 왕수 찌끄러기가 완전히 제거된다. 전술한 왕수의 경우와 마찬가지로 DI워터(22)도 주기적으로 갈아주는 것이 바람직하다.Next, as shown in FIG. 2, a cleaning step of dipping the capillary 1 in DI water (deionized water) 22 is performed. The DI water 22 is filled in the water container 12. As DI water 22, it is preferable to use pure water from which the ionic component has been removed. The capillary 1 may be fixed by a rubber clamper 13 made of a rubber material and contained in the DI water 22. The rubber clamper 13 presses and fixes the capillary 1 in the C1 and C2 directions. Although not shown in the figure, ultrasonic vibration may be applied to the DI water 22 to increase the efficiency of the present cleaning step. This completely removes the residual foreign matter and the aqua debris from the capillary 1. As in the case of the aqua regia described above, the DI water 22 is also periodically changed.
다음으로, 캐필러리(1)를 DI워터(22)에서 꺼낸다. Next, the capillary 1 is taken out from the DI water 22.
다음으로, 도 3에서와 같이, 캐필러리(1)를 오븐기(14)에 넣어 건조시키는 건조단계를 실시한다. 오븐기(14)의 에어블로우 발생기(air-blow generator)(14a)는 에어블로우(A1)(A2)를 발생시켜 캐필러리(1)를 더욱 신속히 건조시킨다. 오븐기(14)내의 온도는 150~200℃ 사이인 것이 바람직하다. Next, as shown in Figure 3, the capillary 1 is put into the oven 14 to perform a drying step. An air-blow generator 14a of the oven 14 generates air blows A1 and A2 to dry the capillary 1 more quickly. It is preferable that the temperature in the oven 14 is between 150-200 degreeC.
다음으로, 캐필러리(1)를 오븐기(14)에서 꺼낸다. 이로써 본 발명에 따른 와이어본딩 공정의 캐필러리 세척방법이 종료된다. Next, the capillary 1 is taken out of the oven 14. This ends the capillary washing method of the wire bonding process according to the present invention.
와이어본딩 공정을 대략 150만번 정도 사용된 후에 전술한 세척방법에 의한 세척방법을 실시한다. 즉 와이어본딩이 150만번 정도 사용된 캐필러리에 대해 전술한 세척방법을 실시한 후 재사용한다. 이렇게 세척 방법을 4번정도 실시한 캐필러리는 그 수명이 다하게 된다. After the wire bonding process is used approximately 1.5 million times, the cleaning method according to the above-described cleaning method is performed. That is, the wire bonding is used after about 1.5 million times the capillary used the cleaning method described above and reused. The capillary, which has been washed four times in this way, will reach its end of life.
이상, 본 발명의 원리를 예시하기 위한 바람직한 실시예에 대하여 도시하고 설명하였으나, 본 발명은 그와 같이 도시되고 설명된 그대로의 구성 및 작용으로 한정되는 것이 아니다. 오히려, 첨부된 특허청구범위의 사상 및 범주를 일탈함이 없이 본 발명에 대한 다양한 변경 및 수정이 가능함을 당업자들은 잘 이해할 수 있을 것이다. 따라서, 그러한 모든 적절한 변경과 수정 및 균등물들도 본 발명의 범위에 속하는 것으로 간주되어야 할 것이다. As mentioned above, although the preferred embodiment for illustrating the principle of this invention was shown and demonstrated, this invention is not limited to the structure and operation as it was shown and described. Rather, those skilled in the art will appreciate that various changes and modifications can be made to the present invention without departing from the spirit and scope of the appended claims. Accordingly, all such suitable changes, modifications, and equivalents should be considered to be within the scope of the present invention.
본 발명에 따른 와이어본딩 공정의 캐필러리 세척방법은, 루비(ruby)계 캐필러리(capillary)를 염산과 질산이 혼합된 왕수(王水)에 담그는 배딩(bathing)단계와, 그 캐필러리를 DI워터(deionized water)에 담그는 클리닝(cleaning)단계와, 그 캐필러리를 건조시키는 건조단계를 포함함으로써, 그 캐필러리 내에 존재하던 와이어 찌끄러기 등의 이물질이 완전히 제거될 수 있으므로, 캐필러리의 재사용이 가능하게 되어 반도체 제조공정의 제조비용이 저감되는 이점이 있다. The capillary washing method of the wire bonding process according to the present invention includes a bathing step of dipping a ruby-based capillary in aqua regia mixed with hydrochloric acid and nitric acid, and the capillary By including a cleaning step of dipping the water in DI water and a drying step of drying the capillary, foreign matter such as wire debris existing in the capillary can be completely removed. Since the filler can be reused, the manufacturing cost of the semiconductor manufacturing process is reduced.
도 1 내지 도 3은 각각 본 발명에 따른 와이어본딩 공정의 캐필러리 세척방법을 나타낸 정면도이다.1 to 3 are each a front view showing a capillary washing method of the wire bonding process according to the present invention.
<도면의 주요 부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
1: 캐필러리 11: 왕수욕조1: capillary 11: royal bath
12: 워터욕조 21: 왕수12: water bath 21: aqua regia
22: DI워터 13: 러버 클램퍼22: DI water 13: rubber clamper
14: 오븐기 14a: 에어블로우 발생기14: oven 14a: air blow generator
Claims (5)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020040024882A KR20050099709A (en) | 2004-04-12 | 2004-04-12 | Method for washing capillary of wire bonding process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040024882A KR20050099709A (en) | 2004-04-12 | 2004-04-12 | Method for washing capillary of wire bonding process |
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| Publication Number | Publication Date |
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| KR20050099709A true KR20050099709A (en) | 2005-10-17 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8034186B2 (en) | 2006-11-03 | 2011-10-11 | Schott Ag | Method for, and apparatus for, cleaning tubes |
| KR20230124332A (en) | 2022-02-18 | 2023-08-25 | 최광진 | System and Methoed for recycled capillary management through image data sharing |
-
2004
- 2004-04-12 KR KR1020040024882A patent/KR20050099709A/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8034186B2 (en) | 2006-11-03 | 2011-10-11 | Schott Ag | Method for, and apparatus for, cleaning tubes |
| DE102006052256B4 (en) * | 2006-11-03 | 2018-09-27 | Schott Ag | Method and apparatus for cleaning tubes |
| KR20230124332A (en) | 2022-02-18 | 2023-08-25 | 최광진 | System and Methoed for recycled capillary management through image data sharing |
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