KR20050092431A - Apparatus and methods for ionized deposition of a film or thin layer - Google Patents

Abstract

A coil assembly (200) is described herein that comprises a) at least one coil (220) with a width (240); and b) at least one boss (210) coupled to the at least one coil, wherein the at least one boss comprises at least two support sections. Methods of forming and/or producing coil assemblies are described herein and comprise a) providing a coil; b) providing at least one boss having at least two support sections; and c) coupling the at least one boss to the coil.

Description

Thin film or thin layer ionization deposition apparatus and method {APPARATUS AND METHODS FOR IONIZED DEPOSITION OF A FILM OR THIN LAYER}

The field of the invention is the field of thin layer or thin film production using ionization deposition.

Electronic and semiconductor components are used in ever-increasing consumer electronics and commercial electronics, telecommunications products and data exchange products. Examples of consumer and commercial products are televisions, computers, cell phones, palm-type or handheld organizers, portable radios, car stereos or remote controls. As the demand for these consumer and commercial electronic products increases, there is also a need to find products that are smaller, more portable to the consumer and to the same product.

As a result of the reduced size of these products, the components included in the products must also be smaller and / or thinner. Examples of components that need to be reduced or reduced in size include microelectronic chip interconnections, semiconductor chip components, resistors, capacitors, printed circuit or wiring boards, wiring, keyboards, touch pads, and chip packaging.

As the size of electronic and semiconductor components is reduced or reduced, defects present in larger components will be magnified in the reduced component. Thus, defects present in or present in a larger component should, if possible, be identified and corrected before the component is reduced for smaller electronics.

In order to identify and correct defects present in electronic, semiconductor and communication components, the components, materials used and manufacturing processes for making the components must be disassembled and analyzed. In some cases, electronic, semiconductor and communication / data exchange components are composed of layers of materials such as metal, metal alloys, ceramics, inorganic materials, polymers, or organometallic materials. Material layers are often thin (about tens of angstroms or less in thickness). In order to improve the quality of the material layers, the process of forming a layer, such as physical vapor deposition of a metal or other compound, should be evaluated and possibly modified and improved.

In order to improve the deposition process of the material layer, the surface and / or material composition must be measured and quantified and defects or defects must be detected. In the case of depositing a material layer or layers, what is to be monitored is not the actual material layer or material layers, but the material being used to produce the material layer on the substrate or other surface and the surface of the material and the target material. Intervening devices, such as coils or collimators, disposed between substrates or other surfaces. For example, when depositing a metal layer on a surface or substrate by sputtering a target comprising a metal, atoms and molecules deflected or released from the target travel in a path to the substrate or other surface that will allow for even and uniform deposition. shall. After deflecting and / or releasing from the target, atoms and molecules that proceed in a naturally predicted path will be deposited unevenly on the surface or substrate, including trenches and holes in the surface or substrate. For certain surfaces and substrates, it is necessary to redirect atoms and molecules leaving the target to achieve more uniform deposition, coating and / or thin films on the surface or substrate.

For this purpose, it would be desirable to develop and utilize deposition apparatus and sputtering chamber systems that will maximize the uniformity of coatings, thin films or depositions on surfaces and / or substrates. A sputtering chamber or coil set, such as that produced by Honeywell Electronic Materials ™, redirects sputtered atoms and / or molecules to form a more uniform thin film and / or layer on a substrate and / or a suitable surface or A consumer product disposed inside an ionizing plasma apparatus. For background purposes, the coil is present as an inductive coupling device in such systems and / or deposition apparatuses to form a second plasma of sufficient density to ionize at least certain metal atoms sputtered from the target. In an ionized metal plasma system, a primary plasma is formed and largely confined near the target by the magnetron, then increasing the atoms escaping from the target surface, such as Ti atoms. The secondary plasma formed by the coil system produces Ti, Cu & Ta ions (depending on the material being sputtered). These metal ions are then attracted to the wafer by a field in the sheath formed on the substrate (wafer) surface. As used herein, the term “cis” refers to the boundary formed between the plasma and a solid surface. This field can be controlled by applying a bias voltage to the wafer and / or the substrate.

Conventional coils and coil sets are expensive and difficult to manufacture because of the size of the metal or metal alloy rods being used. For example, in certain coil sets, tantalum rods are about 1 "to about 1.3" in diameter to produce bosses (supports and connections) of the coil. Accordingly, it is desirable to develop thinner, smaller and ultimately more cost effective coils for use in deposition apparatus, sputtering chamber systems and / or ionized plasma deposition systems. It is also desirable to ensure that the new coils and coil sets have similar lifetimes with respect to the targets being used, which reduces the life difference between the coils, coil sets and targets at least to replace both the coils and the targets. This reduces the number of times the device or system must be shut down before replacing the coil.

1 is a schematic diagram of the projection design under consideration.

2 is a schematic diagram of a coil assembly under consideration.

3 is a schematic diagram of a coil assembly under consideration.

4 is a schematic diagram of a coil assembly under consideration.

5 is a schematic of the sputtering assembly under consideration.

Coil assemblies described herein include a) at least one coil; And b) at least one protrusion coupled to the at least one coil, wherein the at least one protrusion comprises at least two support sections. The method of forming and / or producing a coil assembly described herein includes a) providing a coil; b) providing at least one protrusion having at least two support sections; And c) coupling the at least one protrusion to a coil.

Thinner, smaller and ultimately more cost-effective coils and coil sets for use in deposition apparatus, sputtering chamber systems and / or ionized plasma deposition systems have been surprisingly developed and will be disclosed herein. These new coils and coil sets have similar lifetimes with respect to the targets being used, which, as mentioned above, reduces the lifetime difference between the coils, coil sets and targets at least before replacing both the coils and the targets. This reduces the number of times the device or system must be shut down to replace the coil.

Increasing the cost efficiency of coils and coil sets while reducing the amount of material used, minimizing the lifetime difference between coils and / or coil sets and targets, and maximizing the uniformity of thin films, coatings and / or layers deposited on substrates In order to achieve the purpose of this, a coil set has been developed that uses smaller diameter protrusions and smaller and thinner coils in certain embodiments.

In particular, the coil assembly described herein includes a) at least one coil; And b) at least one protrusion coupled to the at least one coil, wherein the at least one protrusion comprises at least two support sections. The method of forming and / or producing a coil assembly described herein includes a) providing a coil; b) providing at least one protrusion having at least two support sections; And c) coupling the at least one protrusion to a coil.

The coil assembly contemplated includes at least one coil, and in certain embodiments contemplated, the coil assembly includes at least two coils. As described below, the coils contemplated may include any suitable material, including metals or metal alloys. The coils contemplated can have any suitable thickness, depending on the needs of the application. However, the protrusions described herein allow for a coil thickness that is significantly less than the conventional coil thickness. In certain embodiments, the coils contemplated are coils that are considered "thin". As used herein, the phrase "thin coil" means a coil that includes a thickness of about 0.2 inches or less. In other contemplated embodiments, the coils include a thickness of about 0.13 inches or less. In still other embodiments, the coils comprise a thickness of about 0.1 inches to about 0.010 inches or less. The coil also has a height and / or a diameter. In certain embodiments, the height of the coil is about 3 inches or less. In other embodiments, the height of the coil is about 2.5 inches or less. In still other embodiments, the height of the coil is about 2 inches or less. And in other embodiments, the height of the coil is about 1.5 inches or less.

In addition, the coil assembly contemplated includes at least one protrusion coupled to the at least one coil, the at least one protrusion comprising at least two support sections. The protrusion (s) contemplated are coupled to the coil via a screw, bolt or bolt assembly, weld joint, where the weld joint is formed using conventional welding techniques or other more atypical techniques such as laser welding or e-beam welding. do. The protrusion (s) may also be formed in the mold when the coil is formed by using typical molding techniques such as injection molding.

1-4 are schematic diagrams showing one projection design and how at least one projection is coupled to the coil material contemplated herein. However, the at least one protrusion may comprise any suitable form as long as the above-mentioned object is substantially achieved. As used herein, the term “protrusion” means a support device coupled to at least one of coil material, sputtering chamber material, and / or electrical connection material. As used herein, the term "coupled" refers to the physical attachment (adhesive, attachment interface material) of two parts of an object or components, or bond forces such as covalent and ionic bonds, and Van der Waals (Van). der Waals), electrostatic attraction, coulomb attraction, hydrogen bond attraction, and / or physical and / or chemical attraction between two parts of components or components, including non-bonding forces such as magnetic attraction. In the contemplated embodiments, the projection material includes the same material as the coil and / or the target material, but the projection material, the coil material and the target material do not always have to be the same. For example, the coil may comprise tantalum and the at least one protrusion may comprise a tantalum alloy such as TaN.

Materials used to produce the protrusions may include any suitable material, such as those listed below as suitable for the target material, and will include at least a coil material and / or a material similar and / or compatible with the target material. . In addition, the at least one protrusion may comprise a diameter that is significantly smaller than a conventional protrusion diameter, including a diameter of about 0.7 "or less. In preferred embodiments, the at least one protrusion diameter is about 0.5" or less, In additional preferred embodiments, the at least one protrusion diameter is about 0.4 "or less.

In certain embodiments, at least one protrusion comprises a size, a shape and at least two distinct diameters. In still other embodiments, the at least one protrusion may comprise two or more different shapes, sizes and / or diameters, depending on the needs of the consumer and / or vendor, and may be available during construction of the coil and / or coil set. Requirements of the deposition apparatus and / or material. At least two distinct diameters with at least one protrusion are formed by joining the support sections together, each support section having a diameter. For example, the contemplated protrusion 100 shown in FIG. 1 includes a first section 110 having a diameter 115, which section is not directly coupled to a coil (not shown), and the first section ( The second section 120 coupled to 110 is coupled to the coil and has a larger diameter 125 than the diameter 115 of the first section 110. The protrusion 100 also includes openings 130 that are characterized as “vent holes” that aid in venting the screw holes after a support screw (not shown) is provided. In this embodiment, the first section is coupled to the coil via the second section. If there is more than one protrusion coupled to the core, each protrusion may have a different size, shape and / or diameter than the remaining protrusions or protrusions coupled to the coil.

The at least one protrusion may comprise as few as one protrusion coupled to the coil material and as many as ten protrusions coupled to the coil material. In another embodiment, certain and / or all protrusions may also be coupled to the walls of the deposition apparatus and / or coupled to electrical connections. 2-4 show coil assemblies 200-400 contemplated, where a plurality of protrusions 210, 310, and 410 are coupled to coils 220, 320, and 420. 4 also shows coils such as coil 420 with height 430. 2 and 3 are top views of coil assemblies showing only the widths 240 and 340 of the coils 220 and 320.

As mentioned above, the protrusions are designed to provide some support for the coil material, so that each and every protrusion need not be coupled to the wall of the deposition apparatus. In certain embodiments, the protrusion can couple the coil material to the coil material. In certain embodiments, the protrusions and / or protrusions provide support for the coil as well as act as a heat transfer device that transfers heat from the coil and / or deposition chamber / apparatus to the exterior of the apparatus. In certain embodiments, the heat transfer device is a heat pipe that transfers heat out of the chamber or sputtering region and / or acts as a heat pipe. Transferring heat from the coil and / or chamber leads to a more stable secondary plasma without significant convection.

In a manner similar to the at least one protrusion, the coil may comprise at least any suitable material similar and / or compatible with the protrusion material and / or the target material. In additional embodiments, the coil may be produced thinner or smaller than conventional coils and / or coil sets.

The current applied to the coil or coil set in the deposition apparatus can be adjusted and / or designed to suit smaller diameter projection designs, and in certain embodiments, is similar to that achieved in conventional coils and / or coil sets. It can be adjusted and / or designed to suit the smaller diameter materials used to create the coils to create atomic and / or molecular pathways. The magnitude of the currents and protrusions and / or coils is such that atoms and / or sputtered from the target to the surface and / or substrate in such a way that the deposition of atoms and / or molecules becomes more uniform than conventional devices and methods currently produce. It must work together to direct the molecules.

In certain embodiments, a) a simple device / apparatus and / or a simple method for determining wear, consumption and / or degradation of mechanical devices and surfaces or materials; b) notifying the operator when an inspection is needed, as opposed to inspecting the quality of the material on a specific maintenance schedule; c) reducing and / or eliminating material waste by reducing and / or eliminating hasty replacement or repair of material; It would also be ideal to include a sensing system. Sensing devices and Sensing systems contemplated herein may be found in US Provisional Application No. 60/410540, which is incorporated herein in its entirety.

The method of forming and / or producing a coil assembly described herein includes a) providing a coil; b) providing at least one protrusion having at least two support members; And c) coupling at least one protrusion to the coil. The coil and / or at least one protrusion may be a) purchasing at least a predetermined coil and / or at least one protrusion from a supplier; b) preparing or producing at least a predetermined coil and / or at least one projection in-house using materials provided by another source and / or c) in-house or on-site using materials produced or provided in-house. It may be provided by any suitable method including; preparing or producing a coil and / or at least one projection. Coupling of at least one protrusion and coil may be accomplished using one or several coupling methods and apparatus as previously mentioned herein.

5 shows a sputtering target assembly 500 that includes a sputtering target 510 and a coil 520 having a plurality of protrusions 525, the sputtering target 510 being a back plate 505. ), The coil 520 is coupled to the at least one sidewall 530 through at least one protrusion 525. Layer 540 is formed on substrate 550 by atoms sputtered from target 510.

As shown in FIG. 5, the sputtering target and sputtering target assembly contemplated herein include any suitable shape and size depending on the application and the apparatus used in the PVD process. Sputtering targets contemplated herein also include a surface material and a core material (including a back plate), the surface material being bonded to the core material through and / or around a gas chamber or gas stream. The surface material and core material may comprise substantially the same elemental composition or chemical composition / component, or the elemental composition and chemical composition of the surface material may be changed or modified differently from the core material. In most embodiments, the surface material and core material comprise the same elemental composition and chemical composition. However, in embodiments where it is important to detect when the useful life of the target ends, or where it is important to deposit a layer of mixed materials, the surface material and core material may be adjusted to include different elemental or chemical compositions. have.

The surface material is the portion of the target that is exposed to the energy source at any point of measurement, and is also part of the total target material intended to produce atoms and / or molecules that are desirable as surface coatings.

Sputtering targets, coils and / or protrusions can generally be a) reliably formed into a sputtering target; b) can be sputtered from a target (and sometimes a coil) when bombarded by an energy source; c) suitable for forming a final or preceding layer on the wafer or surface; It can include any material. Although the coil includes materials considered to be the same or similar to the material being sputtered, the coil may or may not sputter atoms. Coil sputtering relies primarily on coil bias with respect to plasma and wafers. Materials contemplated for making suitable sputtering targets, coils and / or protrusions are metals, metal alloys, conductive polymers, conductive composites, conductive monomers, insulating materials, hardmask materials and any other suitable sputtering material. As used herein, the term "metal" refers to elements having metal-like properties, such as silicon and germanium, and those in the d- and f-blocks of the Periodic Table of Elements. As used herein, the phrase "d-block" refers to elements with electrons filling the 3d, 4d, 5d and 6d orbitals surrounding the nucleus of the element. As used herein, the phrase "f-block" refers to elements having electrons that fill the 4f and 5f orbitals surrounding the nucleus of the element, including the lanthanide and actinides. Preferred metals are titanium, silicon, cobalt, copper, nickel, iron, zinc, vanadium, zirconium, aluminum and aluminum based materials, tantalum, niobium, tin, chromium, platinum, palladium, gold, silver, tungsten, molybdenum, cerium, Promethium, thorium or combinations thereof. More preferred metals include copper, aluminum, tungsten, titanium, cobalt, tantalum, magnesium, lithium, silicon, manganese, iron or combinations thereof. Most preferred metals include copper, aluminum and aluminum based materials, tungsten, titanium, zirconium, cobalt, tantalum, niobium or combinations thereof. Examples of preferred materials contemplated include aluminum and copper for ultrafine particle aluminum and copper sputtering targets; Aluminum, copper, cobalt, tantalum, zirconium and titanium for use in 200 mm and 300 mm sputtering targets with other mm size targets; Aluminum for use in an aluminum sputtering target that deposits a thin, very conformal aluminum “seed” layer on the surface layers. As used herein, the phrase “combination thereof” means that metal impurities may be present in certain sputtering targets, such as copper sputtering targets with chromium and aluminum impurities, or alloys, borides, carbides, fluorides, nitrides, silicides It is meant that there may be an intentional combination of metal and other materials that make up the sputtering target, such as targets including oxides and others.

The term “metal” also includes alloys, metal / metal composites, metal ceramic composites, metal polymer composites, and other metal composites. Alloys contemplated herein are gold, antimony, arsenic, boron, copper, germanium, nickel, indium, palladium, phosphorus, silicon, cobalt, vanadium, iron, hafnium, titanium, iridium, zirconium, tungsten, silver, platinum, tantalum , Tin, zinc, lithium, manganese, rhenium and / or rhodium. Specific alloys include gold antimony, gold arsenic, gold boron, gold copper, gold germanium, gold nickel, gold nickel indium, gold palladium, gold phosphorus, gold silicon, gold silver platinum, gold tantalum, gold tin, gold zinc, palladium lithium, Palladium manganese, palladium nickel, platinum palladium, palladium rhenium, platinum rhodium, silver arsenic, silver copper, silver gallium, silver gold, silver palladium, silver titanium, titanium zirconium, aluminum copper, aluminum silicon, aluminum silicon copper, aluminum titanium, chromium Copper, chromium manganese palladium, chromium manganese platinum, chromium molybdenum, chromium ruthenium, cobalt platinum, cobalt zirconium niobium, cobalt zirconium rhodium, cobalt zirconium tantalum, copper nickel, iron aluminum, iron rhodium, iron tantalum, chromium silicon oxide, chromium vanadium, Cobalt Chromium, Cobalt Chromium Nickel, Cobalt Chromium Platinum, Cobalt Chromium Tantalum, Cobalt Chromium Tantalum Platinum, Cobalt Iron, Cobalt Iron Boron, Cobalt Iron Chromium , Cobalt iron zirconium, cobalt nickel, cobalt nickel chromium, cobalt nickel iron, cobalt nickel hafnium, cobalt niobium hafnium, cobalt niobium iron, cobalt niobium titanium, iron tantalum chromium, manganese iridium, manganese palladium platinum, manganese platinum, manganese rhodium, manganese Ruthenium, nickel chromium, nickel chromium silicon, nickel cobalt iron, nickel iron, nickel iron chromium, nickel iron rhodium, nickel iron zirconium, nickel manganese, nickel vanadium, tungsten titanium and / or combinations thereof.

Regarding sputtering targets, coils, and / or other materials contemplated herein, examples of sputtering targets, coils, and / or protrusions contemplated include, but are not limited to, the following combinations, chromium borides. Lanthanum boride, molybdenum boride, niobium boride, tantalum boride, titanium boride, tungsten boride, vanadium boride, zirconium boride, boron carbide, chromium carbide, molybdenum carbide, niobium carbide, silicon carbide, tantalum carbide, titanium carbide, tungsten carbide Vanadium, zirconium carbide, aluminum fluoride, barium fluoride, calcium fluoride, cerium fluoride, cryolite, lithium fluoride, magnesium fluoride, potassium fluoride, rare fluoride, sodium fluoride, aluminum nitride, boron nitride, niobium nitride, silicon nitride, Tantalum nitride, titanium nitride, vanadium nitride, zirconium nitride, chromium silicide, molybdenum silicide, niobium silicide, silica Tantalum, titanium silicide, tungsten silicide, vanadium silicide, zirconium silicide, aluminum oxide, antimony oxide, barium oxide, barium titanate, bismuth oxide, bismuth titanate, barium strontium titanate, chromium oxide, copper oxide, hafnium oxide, magnesium oxide, molybdenum oxide Niobium pentoxide, rare earth oxide, silicon dioxide, silicon monoxide, strontium oxide, strontium titanate, tantalum pentoxide, tin oxide, indium oxide, indium tin oxide, lanthanum aluminate, lanthanum oxide, lead titanate, lead zirconate, zirconate titanate Lead, titanium aluminate, lithium niobate, titanium oxide, tungsten oxide, yttrium oxide, zinc oxide, zirconium oxide, bismuth telluride, cadmium selenide, cadmium telluride, lead selenide, lead sulfide, Lead telluride, molybdenum selenide, molybdenum sulfide, zinc selenide, zinc sulfide, zinc telluride and / or its Combinations are contemplated.

As discussed herein, a thin or thin film produced by sputtering atoms or molecules from a target can be any, including other metal layers, substrate layers, insulating layers, hardmask or etchstop layers, photolithographic layers, antireflective layers, and the like. Can be formed on the number or consistency layers. In certain preferred embodiments, the insulating layer is a) US patents US 5959157, US 5986045, US 6124421, US 6156812, US 6172128, US 6171687, US 6214746, and US applications 09/197478, 09/538276, 09/544504, FLARE (polyarylene ether), such as the compounds disclosed in 09/741634, 09/651396, 09/545058, 09/587851, 09/618945, 09/619237, 09/792606, b) United States Application 09 / 545058; PCT / US01 / 22204, filed October 17, 2001; PCT / US01 / 50182, filed December 31, 2001; 60/345374, filed December 31, 2001; 60/347195, filed January 8, 2002; And adamantane-based materials disclosed in 60/350187, filed January 15, 2002; c) US Pat. Nos. 5,115,082, 5,986,045, and 6,143,855, commonly assigned herein; And International Patent Publication WO 01/29052, commonly assigned to this application and published April 26, 2001; And WO 01/29141, published April 26, 2001; And d) patents US 6022812, US 6037275, US 6042994, US 6048804, US 6090448, US 6126733, US 6140254, US 6204202, US 6208014, and US Application 09/046474, 09/046473, 09/111084, 09/360131, Nanoporous silica materials such as the compounds disclosed in 09/378705, 09/234609, 09/379866, 09/141287, 09/379484, 09/392413, 09/549659, 09/488075, 09/566287, and 09/214219 and Silica compounds; e) may include, but is not limited to, insulating materials researched, produced, or disclosed by Honeywell International Inc., including Honeywell HOSP® organosiloxane, the patents and patent applications of which are incorporated herein by reference in their entirety. Combined.

The wafer or substrate may comprise any desired substantially solid material. Particularly preferred substrates will include glass, ceramics, plastics, metals or coated metals, or synthetic materials. In a preferred embodiment, the substrate is a packaging surface, circuit board or package interconnect trace, via-wall or such as found on silicon arsenide or germanium die or wafer surfaces, copper, silver, nickel or gold plated lead frames. Copper surfaces such as those found at stiffener interfaces ("copper" includes copper and their oxides intact), polymer based packaging or board interfaces as found in polyimide-based flexible packages, lead or other metals Alloy solder ball surfaces, glass and polymers such as polyimide. In a more preferred embodiment, the substrate comprises a material such as silicon, copper, glass or polymer, which is common in the packaging and circuit board industry.

Substrate layers contemplated herein may also include at least two material layers. One material layer comprising a substrate layer may comprise the substrate materials described above. Other material layers, including the substrate layer, may include polymers, monomers, organic compounds, inorganic compounds, layers of organometallic compounds, continuous layers, and nanoporous layers.

The term "monomer" as used herein refers to any chemical compound capable of forming a covalent bond in a repetitive manner with itself or with chemically different compounds. Repeated bond formation between monomers can lead to linear, branched, super-branched, or three-dimensional articles. In addition, the monomers may themselves comprise repetitive building blocks, which are referred to as "block polymers" when the polymers formed from the monomers are polymerized. Monomers can belong to several chemical classes of molecules, including organic, organometallic or inorganic molecules. The molecular weight of the monomers can vary greatly between about 40 Daltons to 20000 Daltons. However, especially when monomers contain repeating building blocks, monomers can have a much higher molecular weight. Monomers may also include additional groups such as groups used for crosslinking.

The term "crosslinking" as used herein refers to a process in which at least two molecules, or two portions of a long molecule, are joined together by chemical interaction. The interaction can occur in a number of different ways, including formation of covalent bonds, formation of hydrogen bonds, hydrophobic, hydrophilic, ionic or electrostatic interactions. In addition, molecular interactions may also be characterized by at least temporary physical connections between the molecule and itself or between two or more molecules.

Polymers contemplated may also include a wide range of functional or structural moieties, including aromatic systems, and halogenated groups. In addition, suitable polymers can have a number of configurations, including homopolymers, and heteropolymers. Moreover, alternative polymers may have various forms such as linear, branched, super-branched, or three dimensional. The molecular weights of the polymers contemplated range from a wide range, typically 400 Daltons to 400000 Daltons or more.

Examples of inorganic compounds contemplated are compounds comprising silicates, aluminates and transition metals. Examples of organic compounds include polyarylene ethers, polyimides and polyesters. Examples of organometallic compounds contemplated include poly (dimethylsiloxane), poly (vinylsiloxane) and poly (trifluoropropylsiloxane).

The substrate layer may also include a plurality of voids if the material is desired to be nanoporous instead of continuous. The voids are typically spherical but may alternatively or additionally have any suitable form, including tubular, plate, disc or other forms. It is also contemplated that the voids may have any suitable diameter. In addition, it is contemplated that at least certain voids may join adjacent voids to form a structure having a significant amount of connected or “open” pores. Preferably the voids have an average diameter of 1 micrometer or less, more preferably have an average diameter of 100 nanometers or less, even more preferably an average diameter of 10 nanometers or less. In addition, it is contemplated that the voids may be uniformly or randomly dispersed within the substrate layer. In a preferred embodiment, the voids are uniformly dispersed within the substrate layer.

Examples

As shown in FIGS. 1-4, the contemplated protrusion may be two diameter pins including two support structures with unchanged tapped # 8 threaded holes, the larger diameter support structure being a coil and / or Or e-beam melting to the outer diameter of the coil material. Other mounting devices may be used instead of screws. This coil design uses smaller protrusions to reduce the cost of the coil set. Also, because the projections are thinner and in some cases longer, the same coil can be made thinner, ultimately reducing the difference between the target and coil life. In this example, the protrusions and / or coils may be constructed of lower grade tantalum or other materials.

In this example, the at least one protrusion is made of a CNC lathe, turning, boring and fourth axis milling. The CNC lathe has live tooling and a single bar feeder. At least one protrusion consists of 395 or 495 tantalum and is e-beam welded to a 0.125 "x 2" round coil. The coil is then used in the sputtering chamber for the ENCORE® system. The coil has 200 mm and 300 mm designs, where the 200 mm design includes at least five protrusions and the 300 mm design includes at least seven protrusions. Again, certain numerical values of contemplated protrusion placement and size for this example are shown in FIGS. However, this example is not meant to limit the scope of the invention provided herein.

As such, certain embodiments and applications of ionization deposition apparatus and methods of films or layers have been disclosed. However, it will be apparent to those skilled in the art that many more modifications besides those already described are possible without departing from the inventive concepts described herein. Accordingly, the subject matter of the present invention is not to be restricted except in the spirit and claims disclosed herein. Moreover, in interpreting the disclosure and the claims, all terms should be interpreted in the broadest possible manner consistent with the context. In particular, the terms “comprises” and “comprises” are to be construed as referring to an element, component or step in a non-exclusive manner, wherein the element, component or step mentioned may be present or used and is not explicitly mentioned. It may be combined with other elements, components or steps.

Claims (38)

At least one coil; At least one protrusion coupled to the at least one coil and including at least two support sections; Coil assembly comprising a. The method of claim 1, The coil assembly comprises a metal or a metal alloy. The method of claim 2, The metal or metal alloy comprises a transition metal. The method of claim 3, wherein The transition metal comprises tantalum or titanium. The method of claim 1, And the at least one protrusion comprises three or more protrusions. The method of claim 5, And the at least one protrusion comprises five or more protrusions. The method of claim 1, And said at least one protrusion comprises the same material as said coil. The method of claim 1, And the at least one protrusion is coupled to the coil through a welded joint. The method of claim 8, And the weld joint is formed by laser welding or e-beam welding. The method of claim 1, Wherein said at least one protrusion is molded from one continuous piece of material. The method of claim 1, The at least one protrusion comprising a first support section and a second support section, the diameter of the first support section being different from the diameter of the second support section. An ion deposition apparatus comprising the coil assembly of claim 1. A sputtering chamber assembly comprising the ion deposition apparatus of claim 12. A sputtering chamber assembly comprising the coil assembly of claim 1. The method of claim 1, Said assembly comprising a heat transfer device. The method of claim 15, The heat transfer device includes the at least one protrusion. The method of claim 15, The heat transfer device includes the at least one protrusion and the coil. The method of claim 1, The coil assembly comprising a thickness of about 0.2 inches or less. The method of claim 18, The coil assembly comprising a thickness of about 0.13 inches or less. Providing a coil; Providing at least one protrusion having at least two support sections; And Coupling the at least one protrusion to the coil; Coil assembly production method comprising a. The method of claim 20, The coil comprises a metal or a metal alloy. The method of claim 21, And said metal or metal alloy comprises a transition metal. The method of claim 22, Wherein said transition metal comprises tantalum or titanium. The method of claim 20, And said at least one protrusion comprises three or more protrusions. The method of claim 24, And said at least one protrusion comprises at least five protrusions. The method of claim 20, And said at least one protrusion comprises the same materials as said coil. The method of claim 20, And said at least one protrusion is coupled to said coil through a welded joint. The method of claim 27, And said weld joint is formed by laser welding or e-beam welding. The method of claim 20, And said at least one protrusion is molded from one continuous piece of material. The method of claim 20, Wherein said at least one protrusion comprises a first support section and a second support section, the diameter of the first support section being different from the diameter of the second support section. An ion deposition apparatus comprising a coil assembly produced by the method of claim 20. A sputtering chamber assembly comprising the ion deposition apparatus of claim 31. A sputtering chamber assembly comprising a coil assembly produced by the method of claim 20. The method of claim 20, And said assembly comprises a heat transfer device. The method of claim 34, And said heat transfer device comprises said at least one protrusion. The method of claim 34, And the heat transfer device comprises the at least one protrusion and the coil. The method of claim 20, Wherein said coil comprises a thickness of about 0.2 inches or less. The method of claim 37, wherein Wherein said coil comprises a thickness of about 0.13 inches or less.