KR20050073321A - Dual alternating phase shift mask - Google Patents
Dual alternating phase shift mask Download PDFInfo
- Publication number
- KR20050073321A KR20050073321A KR1020040001679A KR20040001679A KR20050073321A KR 20050073321 A KR20050073321 A KR 20050073321A KR 1020040001679 A KR1020040001679 A KR 1020040001679A KR 20040001679 A KR20040001679 A KR 20040001679A KR 20050073321 A KR20050073321 A KR 20050073321A
- Authority
- KR
- South Korea
- Prior art keywords
- phase shift
- mask
- shift mask
- degrees
- chromium
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 title claims abstract description 27
- 230000009977 dual effect Effects 0.000 title abstract description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 14
- 239000011651 chromium Substances 0.000 claims abstract description 14
- 238000012544 monitoring process Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
본 발명은 새로운 패턴을 통하여 초점 모니터링(Focus Monitoring)을 하는데 있어서, 보다 간편한 방법을 제시하여 포토 공정시 초점 편차(Deviation)를 보다 쉽게 파악할 수 있는 마스크를 제공하고자 하는 것이다.The present invention is to provide a mask that can more easily identify the focus deviation (Deviation) during the photo process by providing a simpler method for focus monitoring (Focus Monitoring) through a new pattern.
본 발명에 따른 이중 교차형 위상 편이 마스크에 따르면, 크롬의 편이정도를 파악하여 디포커스의 정도를 알 수 있도록 된 초점 모니터링 마스크에 있어서, 상기 크롬은 서로 완전한 디포커스 상태일 때 하나의 십자(cross)형상을 이루는 제 1 및 제 2 위상 편이 마스크로 이루어지고, 상기 제 1 위상 편이 마스크는 대략 "ㄱ"자 형상이고 및 제 2 위상 편이 마스크는 "ㄴ"자형상으로 이루어진 것을 특징으로 한다.According to the dual cross-phase shift mask according to the present invention, in a focus monitoring mask that can determine the degree of defocus by grasping the degree of shift of chromium, the chromium crosses one cross when it is completely defocused. A first phase shift mask and a second phase shift mask are substantially "a" shaped and the second phase shift mask is "b" shaped.
Description
본 발명은 이중 교차형 위상 편이 마스크(Dual Alternating Phase Shift Mask)에 관한 것으로서, 새로운 패턴을 통하여 초점 모니터링(Focus Monitoring)을 하는데 있어서, 보다 간편한 방법을 제시하여 포토 공정시 초점 편차(Deviation)를 보다 쉽게 파악할 수 있도록 하기 위한 이중 교차형 위상 편이 마스크에 관한 것이다. The present invention relates to a dual alternating phase shift mask, and provides a simpler method for focus monitoring through a new pattern to provide a more convenient method for focusing the deviation during photo processing. A dual crossover phase shift mask is provided for ease of identification.
제어 해야할 임계 치수(Critical Demension)가 감소할수록 노광장비에서 사용하는 수치적 구경(Numerical Aperture)가 커져야 하고 이에 따른 포토(Photo)공정의 포커스 깊이(Depth of Focus)도 작아지게 된다. As the critical dimension to be controlled decreases, the numerical aperture used in the exposure equipment needs to increase, and thus the depth of focus of the photo process decreases.
도 1 및 도 2 는 종래 상 이동 초점 모니터링 마스크의 원리를 개략적으로 나타낸 도면으로서, 이에 도시한 바와 같이, 기존의 상 이동 초점 모니터링 마스크(Phase Shift Focus Monitoring Mask)는 디포커스(Defocus)에 따른 크롬(chrome)의 이동(shift)정도를 오버레이 기계(Overlay Machine)(도시안됨)을 통하여 측정하여야 한다. 이는 오버레이 독취(Overlay Reading)에 따른 시간적인 소요가 예상될 수 있는 단점이 있다. 즉, 도 1 및 도 2에서, 지점 V1 및 V2에서 각각 크롬(Chrome)의 오버레이 부분에서 90도 위상차가 발생된다. 또한, 도 1 및 도 2에서, 위치대 강도의 비율에 따른 그래프를 도시하고 있는데, 도 1 은, 지점 V2에서의 포인트(2)가, 0 포커스를 중심으로 ±0.3F, ±0.6F, 및 ±0.9F의 위치에 따른 강도를 나타내고 있고, 도 2 는 지점 V2에서의 포인트(4)가, 0 포커스를 중심으로 ±0.3F, ±0.6F, 및 ±0.9F의 위치에 따른 강도를 나타내고 있다. 도 1 및 도 2에서, 정사각형으로 표시된 영역중에서 빗금으로 표시된 부분은 90도 위상 편이 영역(Phase Shift Area)을 나타내고, 나머지 부분은 0도 위상 편이 영역을 나타내고, 정사각형의 띠로 이중으로 표시된 부분 12, 14는 크롬을 나타낸다. 1 and 2 are schematic diagrams illustrating the principle of a conventional phase shift focus monitoring mask. As shown in FIG. 1, a conventional phase shift focus monitoring mask may be formed of chromium according to defocus. The shift of (chrome) should be measured with an Overlay Machine (not shown). This has the disadvantage that time consuming due to overlay reading can be expected. That is, in FIGS. 1 and 2, a 90 degree phase difference occurs in the overlay portion of chrome at points V1 and V2, respectively. In addition, in Figs. 1 and 2, there is shown a graph according to the ratio of position to intensity, in which Fig. 1 shows that the point 2 at the point V2 is ± 0.3F, ± 0.6F, and The intensity | strength according to the position of +/- 0.9F is shown, and FIG. 2 shows the intensity | strength according to the position of +/- 0.3F, +/- 0.6F, and +/- 0.9F with the point 4 in the point V2 centered on zero focus. . In FIGS. 1 and 2, the portion indicated by the hatched portion of the area indicated by the square represents a 90 degree phase shift area, the remaining portion represents the 0 degree phase shift area, and the portion 12 represented by a double band with a square band. 14 represents chromium.
따라서, 본 발명의 목적은 새로운 패턴을 통하여 초점 모니터링(Focus Monitoring)을 하는데 있어서, 보다 간편한 방법을 제시하여 포토 공정시 초점 편차(Deviation)를 보다 쉽게 파악할 수 있는 마스크를 제공함에 있다. Accordingly, an object of the present invention is to provide a mask that can more easily identify the focus deviation during the photo process by presenting a simpler method for focus monitoring through a new pattern.
상기한 바와 같은 목적을 달성하기 위한 본 발명의 바람직한 일실시예에 따르면, 크롬의 편이정도를 파악하여 디포커스의 정도를 알 수 있도록 된 초점 모니터링 마스크에 있어서, 상기 크롬은 서로 완전한 디포커스 상태일 때 하나의 십자(cross)형상을 이루는 제 1 및 제 2 위상 편이 마스크로 이루어지고, 상기 제 1 위상 편이 마스크는 대략 "ㄱ"자 형상이고 및 제 2 위상 편이 마스크는 "ㄴ"자형상으로 이루어진 것을 특징으로 하는 이중 교차형 위상 편이 마스크가 제공된다. According to a preferred embodiment of the present invention for achieving the above object, in the focus monitoring mask to determine the degree of defocus by grasping the degree of deviation of the chromium, the chromium is in a complete defocus state with each other When the first and second phase shift masks form a cross shape, wherein the first phase shift mask is approximately "a" shaped and the second phase shift mask is "b" shaped. A dual crossover phase shift mask is provided.
이하 본 발명에 따른 첨부도면을 참조로 상세히 설명한다.Hereinafter, with reference to the accompanying drawings in accordance with the present invention will be described in detail.
도 3 은 본 발명에 따른 새로운 위상 편이 초점 모니터링 마스크를 개략적으로 나타낸 도면으로서, 이에 도시한 바와 같이, 열십자 형태의 크롬 패턴에서 1사분면 만의 위상차를 90도 위상 편이 시키면 디포커스에 따라 패턴이 바뀌게 됨으로 간단하게 광학 현미경 상으로 장비의 디포커스에 대한 여부를 파악할 수 있다. 상기 크롬 패턴은 제 1 크롬 패턴(22) 및 제 2 크롬 패턴(24)으로 이루어진 이중 구조이다. 3 is a view schematically showing a new phase shift focus monitoring mask according to the present invention. As shown in FIG. 3, when the phase difference of only one quadrant is shifted by 90 degrees in a cruciform chrome pattern, the pattern changes according to defocus. This makes it easy to determine whether the instrument is defocused on an optical microscope. The chromium pattern is a dual structure consisting of the first chromium pattern 22 and the second chromium pattern 24.
도 3 에 도시한 바와 같이, 확실한 디포커스 상태(Just Defocus), 및 + 디포커스 상태(+ Defocus), -디포커스 상태(- Defocus)에서의 상기 제 1 및 제 2 크롬 패턴(22,24)을 나타내고 있다.As shown in FIG. 3, the first and second chromium patterns 22 and 24 in a certain defocus state, plus a defocus state, and a defocus state. Indicates.
아울러 상기한 본 발명의 바람직한 실시예는 예시의 목적을 위해 개시된 것이며, 당업자라면 본 발명의 사상과 범위 안에서 다양한 수정, 변경, 부가 등이 가능할 것이며, 이러한 수정 변경 등은 이하의 특허청구의 범위에 속하는 것으로 보아야 할 것이다. In addition, preferred embodiments of the present invention described above are disclosed for the purpose of illustration, and those skilled in the art will be able to make various modifications, changes, additions, etc. within the spirit and scope of the present invention, such modifications, modifications and the like are within the scope of the claims It should be seen as belonging.
따라서, 상기한 본 발명에 따른 이중 교차 위상 편이 마스크에 따르면, 간단하게 광학 현미경 상으로 장비의 디포커스에 대한 여부를 쉽게 파악할 수 있는 효과가 있다. Therefore, according to the double cross-phase shift mask according to the present invention, there is an effect that can easily determine whether or not the defocus of the equipment on the optical microscope simply.
도 1 및 도 2 는 종래 상 이동 초점 모니터링 마스크의 원리를 개략적으로 나타낸 도면이다.1 and 2 are schematic diagrams illustrating the principle of a conventional phase shift focus monitoring mask.
도 3 은 본 발명에 따른 새로운 위상 편이 초점 모니터링 마스크를 개략적으로 나타낸 도면이다. 3 is a schematic diagram illustrating a new phase shift focus monitoring mask according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
22, 24 : 크롬 22, 24: chrome
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040001679A KR20050073321A (en) | 2004-01-09 | 2004-01-09 | Dual alternating phase shift mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040001679A KR20050073321A (en) | 2004-01-09 | 2004-01-09 | Dual alternating phase shift mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050073321A true KR20050073321A (en) | 2005-07-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020040001679A KR20050073321A (en) | 2004-01-09 | 2004-01-09 | Dual alternating phase shift mask |
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| Country | Link |
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| KR (1) | KR20050073321A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100831680B1 (en) * | 2006-12-28 | 2008-05-22 | 주식회사 하이닉스반도체 | Mask of focus measuring pattern and method for measuring focus values of exposure process by using the same |
-
2004
- 2004-01-09 KR KR1020040001679A patent/KR20050073321A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100831680B1 (en) * | 2006-12-28 | 2008-05-22 | 주식회사 하이닉스반도체 | Mask of focus measuring pattern and method for measuring focus values of exposure process by using the same |
| US7754396B2 (en) | 2006-12-28 | 2010-07-13 | Hynix Semiconductor Inc. | Mask with focus measurement pattern and method for measuring focus value in exposure process using the same |
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