KR20050072196A - 나노 임프린트 리소그래피 시스템 - Google Patents
나노 임프린트 리소그래피 시스템 Download PDFInfo
- Publication number
- KR20050072196A KR20050072196A KR1020040000496A KR20040000496A KR20050072196A KR 20050072196 A KR20050072196 A KR 20050072196A KR 1020040000496 A KR1020040000496 A KR 1020040000496A KR 20040000496 A KR20040000496 A KR 20040000496A KR 20050072196 A KR20050072196 A KR 20050072196A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- template
- lithography system
- imprint lithography
- pressure
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F2009/005—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
Abstract
Description
Claims (2)
- 형판(62)에 형성된 나노 단위의 미세 패턴을 기판(64)에 전사시키는 나노 임프린트 리소그래피 시스템에 있어서,형판(62)의 기울기 변화에 따라 기판(64)의 기울기가 전 방향에 대하여 변화함으로서 형판(62)과 기판(64)의 평형도를 향상시키도록, 기판(64) 하부에 반구형의 공기베어링(68)을 구비하고,형판(62)의 압력이 기판(64)에 균일하게 가해지도록 정수압의 원리를 형판(62)에 대한 가압 방식으로 채택하여, 실린더(58)를 가압하는 공기주머니(56)를 구비하는 것을 특징으로 하는 나노 임프린트 리소그래피 시스템.
- 제 1항에 있어서,상기 공기베어링(68) 및 공기주머니(56)에 공기를 공급하도록, 컴프레셔(54)를 구비하는 것을 특징으로 하는 나노 임프린트 리소그래피 시스템.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040000496A KR100551682B1 (ko) | 2004-01-06 | 2004-01-06 | 나노 임프린트 리소그래피 시스템 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040000496A KR100551682B1 (ko) | 2004-01-06 | 2004-01-06 | 나노 임프린트 리소그래피 시스템 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050072196A true KR20050072196A (ko) | 2005-07-11 |
KR100551682B1 KR100551682B1 (ko) | 2006-02-13 |
Family
ID=37261699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040000496A KR100551682B1 (ko) | 2004-01-06 | 2004-01-06 | 나노 임프린트 리소그래피 시스템 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100551682B1 (ko) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100558754B1 (ko) * | 2004-02-24 | 2006-03-10 | 한국기계연구원 | Uv 나노임프린트 리소그래피 공정 및 이 공정을수행하는 장치 |
KR100718236B1 (ko) * | 2005-09-29 | 2007-05-15 | (주)화진인더스트리 | 나노 임프린팅 장치 |
KR100760340B1 (ko) * | 2006-03-22 | 2007-09-20 | (주) 비앤피 사이언스 | 토크 제어를 이용한 기판 평형도 제어 방법 및 장치 |
KR100779731B1 (ko) * | 2006-06-13 | 2007-11-26 | (주)이노포스 | 미세 형상 제조장치 및 제조방법 |
US7641467B2 (en) | 2007-05-02 | 2010-01-05 | Asml Netherlands B.V. | Imprint lithography |
CN103399387A (zh) * | 2013-07-29 | 2013-11-20 | 中国科学院长春光学精密机械与物理研究所 | 光刻投影物镜系统中光学元件多气囊支撑装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2001280980A1 (en) * | 2000-08-01 | 2002-02-13 | Board Of Regents, The University Of Texas System | Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography |
JP3638513B2 (ja) | 2000-09-25 | 2005-04-13 | 株式会社東芝 | 転写装置及び転写方法 |
-
2004
- 2004-01-06 KR KR1020040000496A patent/KR100551682B1/ko active IP Right Grant
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100558754B1 (ko) * | 2004-02-24 | 2006-03-10 | 한국기계연구원 | Uv 나노임프린트 리소그래피 공정 및 이 공정을수행하는 장치 |
KR100718236B1 (ko) * | 2005-09-29 | 2007-05-15 | (주)화진인더스트리 | 나노 임프린팅 장치 |
KR100760340B1 (ko) * | 2006-03-22 | 2007-09-20 | (주) 비앤피 사이언스 | 토크 제어를 이용한 기판 평형도 제어 방법 및 장치 |
KR100779731B1 (ko) * | 2006-06-13 | 2007-11-26 | (주)이노포스 | 미세 형상 제조장치 및 제조방법 |
US7641467B2 (en) | 2007-05-02 | 2010-01-05 | Asml Netherlands B.V. | Imprint lithography |
CN103399387A (zh) * | 2013-07-29 | 2013-11-20 | 中国科学院长春光学精密机械与物理研究所 | 光刻投影物镜系统中光学元件多气囊支撑装置 |
Also Published As
Publication number | Publication date |
---|---|
KR100551682B1 (ko) | 2006-02-13 |
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