KR20050038728A - Method to remove print pattern of semiconductor wafer and device thereof - Google Patents
Method to remove print pattern of semiconductor wafer and device thereof Download PDFInfo
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- KR20050038728A KR20050038728A KR1020030073948A KR20030073948A KR20050038728A KR 20050038728 A KR20050038728 A KR 20050038728A KR 1020030073948 A KR1020030073948 A KR 1020030073948A KR 20030073948 A KR20030073948 A KR 20030073948A KR 20050038728 A KR20050038728 A KR 20050038728A
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- wafer
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- dust
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000428 dust Substances 0.000 claims abstract description 66
- 239000000843 powder Substances 0.000 claims abstract description 53
- 239000000919 ceramic Substances 0.000 claims abstract description 26
- 230000002950 deficient Effects 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 10
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 230000002265 prevention Effects 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 claims description 4
- 238000009434 installation Methods 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 238000005119 centrifugation Methods 0.000 claims description 2
- 238000007664 blowing Methods 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 5
- 238000004064 recycling Methods 0.000 abstract description 2
- 239000007921 spray Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 86
- 238000005498 polishing Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 241000220259 Raphanus Species 0.000 description 4
- 235000006140 Raphanus sativus var sativus Nutrition 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
본 발명은 인쇄불량인 반도체 웨이퍼의 표면을 건식방법으로 가공하여 인쇄패턴을 제거한 후 이를 재활용하고자 하는 반도체 웨이퍼의 인쇄패턴 제거방법 및 장치에 관한 것이다.The present invention relates to a method and an apparatus for removing a printed pattern of a semiconductor wafer to be processed after the surface of the defective semiconductor wafer is printed by a dry method to remove the printed pattern.
이러한 본 발명은 회로패턴이 불량하게 인쇄된 웨이퍼를 그 패턴이 상방향을 향하도록 하여 메쉬망컨베이어로 이송하고, 메쉬망컨베이어의 상부에 설치되어 있는 투사노즐을 통해 미세 세라믹 분말을 압축공기로 분사하여 웨이퍼 표면의 패턴을 제거하며, 패턴이 제거된 웨이퍼를 계속 이송하면서 투사노즐보다 후위에 설치된 이물질제거노즐을 통해 웨이퍼의 표면에 압축공기를 불어주어 최종적으로 이물질을 제거한 후 배출하고, 패턴을 제거하고 난 후의 미분과 분진을 메쉬망컨베이어의 하부 분진포집통에 떨어지게 하여 이를 스크류컨베이어로 모아주며, 상기 모아진 미분과 분진을 사이클론으로 이송하고, 이 미분과 분진을 사이클론을 통해 분급하여 미세 분말은 집진기로 보내고 입자가 큰 분말은 다시 투사노즐로 재투입하여 재활용하는 것이다.The present invention transfers a wafer having a poorly printed circuit pattern to the mesh network conveyor with the pattern facing upward, and sprays fine ceramic powder into the compressed air through the projection nozzle installed on the upper part of the mesh network conveyor. Removes the pattern on the surface of the wafer, blows compressed air to the surface of the wafer through the foreign substance removal nozzle installed behind the projection nozzle while continuously transferring the wafer from which the pattern has been removed. After the fine powder and dust fall to the lower dust collection container of the mesh network conveyor and collect it with a screw conveyor, transfer the collected fine powder and dust to a cyclone, classify the fine powder and dust through a cyclone and collect the fine powder. Powder and large particles are recycled back to the projection nozzle for recycling. The.
Description
본 발명은 반도체 웨이퍼의 인쇄패턴 제거방법 및 장치에 관한 것으로, 더욱 상세하게는 인쇄불량인 반도체 웨이퍼의 표면을 건식방법으로 가공하여 인쇄패턴을 제거한 후 이를 재활용하고자 하는 것이다.The present invention relates to a method and apparatus for removing a printed pattern of a semiconductor wafer, and more particularly, to remove the printed pattern by processing the surface of a semiconductor wafer, which is a printing defect, by a dry method, and to recycle it.
주지하다시피, 반도체 소자의 원판이라고 할 수 있는 웨이퍼는 실리콘 원료를 원통형으로 성장시켜 이를 얇게 자른 후 이를 그라인딩하여 표면을 매끈하게 가공하고 그 표면에 반도체 패턴을 인쇄하여 구성하게 된다.As is well known, a wafer, which can be referred to as a disc of a semiconductor device, is formed by growing a silicon raw material into a cylindrical shape, cutting it thinly, grinding it, smoothing the surface, and printing a semiconductor pattern on the surface.
이러한 웨이퍼의 패턴 인쇄공정은 먼저 웨이퍼를 고온의 석영관안에서 산소와 반응시켜 실리콘 산화막을 만든 후 포토레지스트를 그 위에 도포하고, 회로의 패턴이 형성된 포토마스크를 놓고 노광한 다음 현상하며, 현상된 웨이퍼의 표면에 에칭액을 뿌려 실리콘 산화막을 에칭한 후 포토레지스트를 제거하고 세정하면 된다.In the pattern printing process of the wafer, the wafer is first reacted with oxygen in a high temperature quartz tube to form a silicon oxide film, then a photoresist is applied thereon, a photomask having a circuit pattern formed thereon is exposed and developed, and then developed. An etching solution is sprayed onto the surface of the silicon oxide film to etch the silicon oxide film, and then the photoresist is removed and washed.
이러한 반도체 웨이퍼는 원통형의 실리콘 시드로부터 각각의 단위 웨이퍼로 절단하는 공정, 표면을 연마하는 그라인딩공정, 패턴 인쇄공정 등의 많은 과정을 거쳐 완성되고, 특히 패턴 인쇄공정은 산화막 형성, 포토레지스트 도포, 노광, 현상, 식각, 포토레지스트 제거, 세정 등 많은 공정으로 이루어지므로 반도체 웨이퍼를 제조하는 과정에서 웨이퍼 표면의 이물질 혼재, 마스크의 패턴 불량, 노광 불량, 식각 불량 등 여러 가지 원인에 의해 웨이퍼의 표면에 패턴이 제대로 인쇄되지 못할 경우가 있으며, 패턴불량인 웨이퍼는 반도체로서 활용할 수 없어 대부분 폐기하고 있다.Such a semiconductor wafer is completed through a number of processes such as cutting a cylindrical silicon seed into individual unit wafers, grinding a surface, and a pattern printing process. Particularly, the pattern printing process is performed by forming an oxide film, applying a photoresist, and exposing the wafer. It is composed of many processes such as development, etching, photoresist removal and cleaning, so that the pattern on the surface of the wafer can be patterned by various causes such as mixing of foreign matter on the wafer surface, poor pattern of mask, poor exposure, and poor etching during manufacturing semiconductor wafer. This may not be properly printed, and a defective wafer cannot be used as a semiconductor, and most of it is discarded.
이러한 패턴 불량인 웨이퍼를 폐기하는 이유는 이미 인쇄되어 있는 패턴을 완벽하게 제거할 방법이 없기 때문으로, 실제 국내 S사의 경우 월평균 70만장 이상의 불량 웨이퍼를 폐기하고 있어 반도체 원재의 낭비가 매우 심하다고 할 수 있다.The reason for discarding such defective wafers is that there is no way to completely remove the printed patterns. In fact, S company in Korea discards more than 700,000 defective wafers per month, which means that waste of raw materials for semiconductors is very serious. have.
패턴 불량인 웨이퍼의 불량 패턴을 제거할 수 있는 방법으로 웨이퍼의 표면에 콜로이드성 실리카를 뿌리고 세라믹 패드를 고속으로 회전시켜 화학적인 방법과 기계적인 방법을 동시에 적용하여 웨이퍼 표면을 평탄화하는 화학 기계적 처리방법(CMP : Chemical Mechanical Planarization)을 생각할 수 있지만, 이러한 CMP공정에서는 연마시 사용되는 액상의 슬러리(콜로이드성 실리카)를 한번 사용하면 재사용이 불가능하여 연마재에 많은 비용이 소요됨은 물론 그 폐액으로 인한 환경오염의 문제와 처리비용의 문제가 동시에 수반되고, 연마판(패드)을 자주 교체해주어야 하며, 장비가 고가이어서 전체적으로 반도체 웨이퍼를 새로이 생산하는 것보다 반도체 웨이퍼를 재처리하는 비용이 더 들게 되므로 실제 패턴불량 웨이퍼는 낭비인걸 알면서도 어쩔 수 없이 폐기하고 있는 실정이다.Chemical and mechanical treatment method that can remove bad pattern of wafer that is bad pattern by spraying colloidal silica on the surface of wafer and rotating ceramic pad at high speed to apply chemical and mechanical method simultaneously to planarize wafer surface (CMP: Chemical Mechanical Planarization) can be considered, but in this CMP process, once the liquid slurry (colloidal silica) used in polishing is used, it cannot be reused, which costs a lot of abrasives and environmental pollution due to the waste liquid. Problem and processing cost at the same time, the polishing board (pad) must be replaced frequently, and the equipment is expensive so that the overall cost of reprocessing semiconductor wafers is higher than that of newly producing semiconductor wafers. Knowing that wafers are wasteful, but inevitably discarded I'm doing it.
본 발명은 이러한 점을 감안하여 제안된 것으로, 패턴불량인 웨이퍼의 표면이 상방향으로 향하도록 하여 이송컨베이어를 통해 이송하면서 상부로부터 미세 세라믹 파우더를 고압 압축공기와 함께 분사하여 그 충격을 통해 웨이퍼의 불량패턴을 제거토록 하고, 연마 과정에서 발생하는 미세 세라믹 파우더와 분진은 사이클론을 통해 미분말은 집진기로 빠져나가고 굵은 사이즈의 파우더는 다시 연마재로 이용될 수 있게 함으로써 웨이퍼의 불량 패턴을 제거하는 비용을 최소화할 수 있어 적은 비용으로도 웨이퍼의 불량패턴을 효과적으로 제거할 수 있으며, 불량패턴이 제거된 와이퍼는 이를 필요로하는 장소에 재활용할 수 있어 재료의 낭비를 막을 수 있는 반도체 웨이퍼의 인쇄패턴 제거방법 및 장치를 제공하고자 하는 것이다.The present invention has been proposed in view of this point, and the surface of the wafer with a bad pattern is directed upward, and the fine ceramic powder is sprayed together with the high-pressure compressed air from the top while transferring through the conveying conveyor, and the impact of the wafer Minimize the cost of removing the defective pattern of the wafer by eliminating the defective pattern and by allowing the fine ceramic powder and dust generated during the polishing process to escape the fine powder through the cyclone and the coarse powder to be used as the abrasive. Method of removing printed pattern of semiconductor wafer can effectively remove the defective pattern of wafer at low cost, and the wiper from which the defective pattern has been removed can be recycled to the place where it is needed, and can prevent material waste. It is to provide a device.
이하, 본 발명을 제시된 실시예와 첨부된 도면에 따라 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the presented embodiments and accompanying drawings.
본 발명에 따른 반도체 웨이퍼의 인쇄패턴 제거장치는 도 1 및 도 2에 도시한 바와 같이 반도체 공정상에 발생하는 패턴불량 웨이퍼(W)를 그 패턴이 상방향으로 향하도록 하여 이송해주는 메쉬망컨베이어(1)와, 메쉬망컨베이어(1)의 상부에 설치되어 웨이퍼(W)의 표면을 향해 압축공기와 함께 미세 세라믹 분말을 투사하여 그 패턴을 제거해주는 투사노즐(2)과, 투사노즐(2)보다는 후위에 설치되어 패턴이 제거된 웨이퍼(W)의 표면에 압축공기를 분사하여 이물질을 제거해주는 이물질제거노즐(3)과, 메쉬망컨베이어(1)의 하부에 설치되어 웨이퍼(W)의 패턴을 제거하고 메쉬망컨베이어(1)를 통과한 미세 세라믹 분말과 분진을 포집하는 분진포집통(4)과, 분진포집통(4)에 떨어진 미세 세라믹 분말과 분진을 중앙으로 모아주도록 중앙을 중심으로 서로 대칭되게 형성되어 분진포집통(4) 내부에 수평방향으로 설치된 스크류컨베이어(5)와, 분진포집통(4)의 하부 중앙에 설치되어 스크류컨베이어(5)에 의해 모인 미세 세라믹 분말과 분진을 이송시키는 분진이송노즐(6)과, 분진이송노즐(6)로부터 미세 세라믹 분말과 분진을 유입시켜 원심분리에 의해 10㎛이하의 분말과 이보다는 큰 입자의 분말을 분리하고 10㎛이상의 미세 세라믹 분말은 투사노즐(2)로 다시 투입하는 사이클론(7)과, 사이클론(7)으로부터 분리된 10㎛이하의 분말을 송풍기(8)를 통해 유입시켜 집진하는 집진기(9)와, 투사노즐(2)과 이물질제거노즐(3)에 압축공기를 제공해주는 공기압축기(10)로 구성된다.The apparatus for removing a printed pattern of a semiconductor wafer according to the present invention is a mesh network conveyor for transferring a pattern defective wafer W generated in a semiconductor process so that the pattern is directed upward as shown in FIGS. 1 and 2. 1), a projection nozzle 2 installed on the mesh network conveyor 1 and projecting fine ceramic powder with compressed air toward the surface of the wafer W to remove the pattern, and a projection nozzle 2 Rather, it is installed at the rear and removes foreign substances by spraying compressed air on the surface of the wafer W from which the pattern has been removed, and the foreign matter removing nozzle 3 and the mesh net conveyor 1 installed below the pattern of the wafer W. To remove dust and collect fine ceramic powder and dust that have passed through the mesh network conveyor (1), and to collect the fine ceramic powder and dust dropped on the dust collecting cylinder (4). Symmetrically with each other And convey the fine ceramic powder and dust collected by the screw conveyor 5 installed in the center of the lower portion of the dust collecting container 4 and the screw conveyor 5 installed in the horizontal direction inside the dust collecting container 4. The fine ceramic powder and the dust are introduced from the nozzle 6 and the dust transfer nozzle 6 to separate the powder of 10 μm or less and the powder of larger particles by centrifugation. 2) the cyclone (7) to be re-injected, the dust collector (9) for collecting and collecting the powder of 10㎛ or less separated from the cyclone (7) through the blower (8), the projection nozzle (2) and foreign matter removal nozzle It consists of an air compressor (10) for providing compressed air to (3).
이때, 투사노즐(2)의 설치위치 전후에는 웨이퍼(W)의 패턴 제거과정에서 압력에 의해 웨이퍼(W)가 이탈되는 것을 방지할 수 있도록 메쉬망컨베이어(1)와 근접하게 웨이퍼이탈방지판(11)(11')이 각각 설치되는데, 각 웨이퍼이탈방지판(11)(11') 사이의 간격은 가장 작은 크기의 웨이퍼(5인치)의 직경보다 작게 5인치 이하로 설정하여 이보다 큰 모든 웨이퍼에 범용적으로 적용할 수 있게 구성되며, 투사노즐(2)은 웨이퍼(W)의 진행방향으로 직선 왕복운동될 수 있게 구성되고, 집진기(9) 내부에는 다수의 컬럼필터(9a)가 설치되어 상기 유입된 미세분말을 아래쪽으로 유도할 수 있게 구성된다.At this time, before and after the installation position of the projection nozzle 2, the wafer removal prevention plate in close proximity to the mesh network conveyor (1) to prevent the wafer (W) from being separated by the pressure during the pattern removal process of the wafer (W) ( 11) 11 'are installed respectively, and the gap between each wafer escape preventing plate 11, 11' is set to 5 inches or less smaller than the diameter of the smallest wafer (5 inches) and all wafers larger than this are installed. The projection nozzle 2 is configured to be linearly reciprocated in the advancing direction of the wafer W, and a plurality of column filters 9a are installed inside the dust collector 9. It is configured to guide the introduced fine powder downward.
또한, 웨이퍼(W)의 표면 처리위치 외부에는 분진커버(12)가 씌워지고, 이 분진커버(12)의 일측에는 메쉬망컨베이어(1)의 속도를 조절하여 웨이퍼(W) 이동속도를 조절해주는 컨베이어속도제어노브(13)와, 미세 세라믹 분말의 투사압력을 조절해주는 분사압제어노브(14)가 로터리 스위치 형상으로 구비되며, 또 투시창(15)이 구비되어 웨이퍼(W)의 표면 처리과정을 육안으로 확인할 수 있게 구성된다.In addition, a dust cover 12 is covered outside the surface treatment position of the wafer W, and one side of the dust cover 12 adjusts the speed of the mesh network conveyor 1 to adjust the wafer W movement speed. The conveyor speed control knob 13 and the injection pressure control knob 14 for adjusting the projection pressure of the fine ceramic powder are provided in the form of a rotary switch, and the see-through window 15 is provided to process the surface of the wafer W. It is configured to be visible to the naked eye.
이와 같이 구성된 반도체 웨이퍼의 인쇄패턴 제거장치를 이용하여 반도체 웨이퍼의 불량 패턴을 제거하는 방법을 살펴보면 다음과 같다.The method of removing the defective pattern of the semiconductor wafer by using the printing pattern removal apparatus of the semiconductor wafer configured as described above is as follows.
먼저, 반도체 제조공정에서 발생된 패턴불량 웨이퍼(W)를 수거하여 작업장으로 운반한 후 메쉬망컨베이어(1)의 상부에 낱개로 올려 이송하게 되는데, 웨이퍼(W)를 메쉬망컨베이어(1)에 올릴 때에는 웨이퍼(W)의 패턴형성면이 상부를 향하도록 해야 하며, 가급적 메쉬망컨베이어(1)의 중심부에 놓이도록 하여 투사노즐(2)의 투사범위를 벗어나지 않도록 해야 한다.First, the defective pattern wafers generated in the semiconductor manufacturing process are collected and transported to the workshop, and then individually transferred to the upper part of the mesh network conveyor 1, and the wafers W are transferred to the mesh network conveyor 1. When raising, the pattern forming surface of the wafer W should face upward, and preferably be placed at the center of the mesh network conveyor 1 so as not to deviate from the projection range of the projection nozzle 2.
메쉬망컨베이어(1)의 이동에 따라 웨이퍼(W)가 이송되면 메쉬망컨베이어(1)의 상부에 설치되어 있는 투사노즐(2)로부터 미세 세라믹 분말이 압축공기에 의해 분사되어 그 충격에 의해 웨이퍼(W) 표면의 패턴을 제거하게 되는 것으로, 본 발명에 적용되는 미세 세라믹 분말은 기계적 강도가 높고 내열성, 내마모성, 내식성 등이 뛰어난 평균 63㎛ 크기의 알루미나(Al2O3)로 구성되고, 투사노즐(2)이 웨이퍼(W)의 이송방향으로 직선왕복운동할 수 있게 구성되어 있어 투사노즐(2)이 직선왕복운동하면서 이로부터 투사되는 미세 알루미나 분말이 이송되는 웨이퍼(W)의 표면을 미세하게 여러번 타격하게 되므로 웨이퍼(W)의 불량 패턴(두게 1㎛이하)이 용이하게 제거될 수 있으며, 투사노즐(2)의 설치위치 전후에는 메쉬망컨베이어(1)와 근접하게 웨이퍼이탈방지판(11)(11')이 각각 설치되어 있으므로 투사압력이 웨이퍼(W)에 강하게 작용되어도 웨이퍼(W)가 자신의 위치에서 이탈되지 않고 메쉬망컨베이어(1)에 얹힌 상태로 이송될 수 있다.When the wafer W is transferred as the mesh network conveyor 1 moves, fine ceramic powder is injected from the projection nozzle 2 installed on the mesh network conveyor 1 by compressed air, and the wafer is affected by the impact. (W) By removing the surface pattern, the fine ceramic powder applied to the present invention is composed of alumina (Al 2 O 3 ) having an average size of 63 μm with high mechanical strength and excellent heat resistance, abrasion resistance, corrosion resistance, and the like. The nozzle 2 is configured to linearly reciprocate in the conveying direction of the wafer W, so that the surface of the wafer W to which the alumina powder projected from the projection nozzle 2 is projected while the reciprocating nozzle 2 is linearly reciprocated is fine. Since it is hit several times, the defect pattern of the wafer W (thickness less than 1㎛) can be easily removed, and before and after the installation position of the projection nozzle 2, the wafer removal prevention plate (in close proximity to the mesh network conveyor 1) 11 11 'are respectively provided so that the wafer W can be transferred to the mesh network conveyor 1 without being released from its position even if the projection pressure is strongly applied to the wafer W.
또한, 각 웨이퍼이탈방지판(11)(11')의 사이간격은 가장 작은 웨이퍼(W)의 직경인 5인치보다 작게 구성되어 있어 모든 종류의 웨이퍼, 즉 직경이 5인치, 6인치, 8인치, 12인치인 모든 웨이퍼의 불량패턴을 제거하는데 범용적으로 적용할 수 있게 된다.In addition, the gap between each wafer escape preventing plate 11, 11 'is made smaller than 5 inches, which is the diameter of the smallest wafer W, so that all kinds of wafers are 5 inches, 6 inches, 8 inches in diameter. In addition, it can be widely applied to remove the defective pattern of all wafers 12 inches.
이때, 메쉬망컨베이어(1)가 너무 빨리 이동하면 웨이퍼(W)의 패턴이 완전히 제거될 수 없으므로 메쉬망컨베이어(1)의 이송속도는 10m/min 정도로 설정하게 되고, 미세 알루미나 분말의 분사 압력 역시 너무 크거나 작으면 웨이퍼(W)가 너무 많이 연마되어 웨이퍼(W)의 두께가 너무 얇아지거나 패턴을 완전히 제거할 수 없으므로 2∼5㎏/㎠의 사이에서 조정하게 된다.At this time, if the mesh network conveyor (1) moves too fast, the pattern of the wafer (W) can not be completely removed, the transfer speed of the mesh network conveyor (1) is set to about 10m / min, the injection pressure of the fine alumina powder also If too large or small, the wafer W is polished too much, so that the thickness of the wafer W becomes too thin or the pattern cannot be completely removed, so that the adjustment is made between 2 and 5 kg / cm 2.
불량패턴이 제거된 웨이퍼(W)는 메쉬망컨베이어(1)에 실려 이송되다가 이물질제거노즐(3)을 통해 분사되는 압축공기에 의해 그 표면에 남아있던 분진이 완전히 제거되어 깨끗해진 상태로 최종 배출될 수 있다.The wafer (W) from which the bad pattern is removed is transported in the mesh network conveyor (1), and the dust remaining on the surface is completely removed by the compressed air sprayed through the foreign matter removal nozzle (3), and finally discharged in a clean state. Can be.
그리고, 웨이퍼(W)의 이송을 담당하는 메쉬망컨베이어(1)는 내마모성을 가진 스테인리스스틸재(SUS304)로 구성되어 있어 미세 알루미나 분말에 의한 충격에 충분히 견딜 수 있고, 연마시 또는 최종 이물질제거시 발생되는 미분과 분진(미세 세라믹 분말과 웨이퍼의 분진이 섞인 상태)은 메쉬망컨베이어(1)의 메쉬망 사이를 통과하여 그 아래에 위치한 분진포집통(4)으로 모이게 된다.In addition, the mesh network conveyor 1, which is responsible for the transfer of the wafer W, is made of stainless steel material (SUS304) having abrasion resistance, so that it can sufficiently withstand the impact of fine alumina powder, and at the time of polishing or removing the final foreign matter. The generated fines and dust (the fine ceramic powder and the dust of the wafer are mixed) pass through the mesh network of the mesh network conveyor 1 and are collected in the dust collection container 4 located thereunder.
분진포집통(4)으로 떨어지는 분진이나 미분은 메쉬망컨베이어(1) 전체적으로 분산되어 떨어지므로 중앙부를 중심으로 서로 대칭되는 형상의 스크류컨베이어(5)를 분진포집통(4)의 내부에 가로방향으로 설치한 것이며, 이러한 스크류컨베이어(5)가 회전하게 되면 분진포집통(4)의 전체에 분산되어 있던 분진 또는 미분이 스크류컨베이어(5)를 타고 중앙부로 모일 수 있다.Since dust or fine powder falling into the dust collecting container 4 is dispersed throughout the mesh network conveyor 1, the screw conveyors 5 having a shape symmetrical with each other about the center part are transversely disposed inside the dust collecting container 4. When the screw conveyor 5 is rotated, the dust or fine powder dispersed in the entire dust collecting container 4 may be collected by the screw conveyor 5 to the center part.
또한, 분진포집통(4)의 하부 중앙에는 상기 모인 분진과 미분을 사이클론(7)으로 이송하기 위한 분진이송노즐(6)이 구비되어 있어 이를 통해 분진과 미분이 전량 사이클론(7)으로 이송될 수 있으며, 사이클론(7)에서는 회전원심력에 따라 입자가 큰 것은 하부로 떨어져 투사노즐(2)로 다시 투입되므로 한번 연마에 사용된 연마재를 재사용할 수 있는 이점이 있게 되고 입자가 작은 것은 부유하여 송풍기(8)를 통해 집진기(9)로 이송되어지며, 집진기(9)에는 다수의 컬럼필터(9a)가 설치되어 있어 미세분말을 외부로 유출시키지 않고 집진기(9)의 아래쪽으로 유도할 수 있으며, 집진기(9)에 모인 미세분말은 주기적으로 수거하여 폐기하면 된다.In addition, the lower center of the dust collecting container (4) is provided with a dust transfer nozzle (6) for transferring the collected dust and fine powder to the cyclone (7) through which the dust and fine powder to be transferred to the entire cyclone (7) In the cyclone (7), the larger particles are dropped into the lower part according to the rotational centrifugal force, and then injected back into the projection nozzle (2), which has the advantage of reusing the abrasive used for polishing once, and the small particles are floating and the blower (8) is conveyed to the dust collector (9), the dust collector (9) is provided with a plurality of column filters (9a) can be guided to the bottom of the dust collector (9) without spilling the fine powder to the outside, The fine powder collected in the dust collector 9 may be collected periodically and disposed of.
이때, 최초 투입되는 미세 알루미나 분말은 입자 사이즈가 평균 63㎛로서, 분진포집통(4)에 1회에 20㎏ 정도를 부어 사용하게 되며, 그 양이 적어지면 다시 일정량을 보충해주면 되고, 장시간 연마에 사용되면서 그 입자크기가 10㎛이하가 되면 사이클론(7)에서 자연스럽게 집진기(9)쪽으로 이송되어 진다.At this time, the fine alumina powder to be introduced initially has a particle size of 63 μm on average, and is used by pouring about 20 kg into the dust collecting container 4 at a time. When the particle size is less than 10㎛ when used in the cyclone (7) is naturally transferred to the dust collector (9).
한편, 웨이퍼(W)의 표면 처리위치 외측에는 분진커버(12)가 위치되어 있어 웨이퍼(W)의 처리과정에서 발생된 분진이 외부로 유출되지 못하도록 막아주게 되며, 분진커버(12)에는 투시창(15)이 구비되어 있어 웨이퍼(W)의 표면이 정확히 연마되고 있나 육안으로 확인할 수 있는데, 웨이퍼(W)의 이동속도는 10m/min, 투사노즐(2)의 투사압력은 3㎏/㎠이 적당하나 웨이퍼(W)마다 그 크기가 다르고, 또 그 패턴의 두께가 상이하므로 이를 투시창(15)을 통해 육안으로 확인하여 컨베이어속도제어노브(13)와 분사압제어노브(14)를 통해 최적의 상태로 조정하면 된다.Meanwhile, the dust cover 12 is positioned outside the surface treatment position of the wafer W to prevent dust generated during the processing of the wafer W from leaking to the outside. 15) is provided, the surface of the wafer (W) is accurately polished can be confirmed with the naked eye, the movement speed of the wafer (W) 10m / min, the projection pressure of the projection nozzle (2) is suitable 3kg / ㎠ Since the size of each one of the wafers (W) is different, and the thickness of the pattern is different, it is visually confirmed through the see-through window 15 and the optimum state through the conveyor speed control knob 13 and the injection pressure control knob 14. This can be adjusted.
이하에서는 본 발명을 적용하여 실제 웨이퍼의 표면을 연마한 실험치를 실시예를 통해 설명한다.Hereinafter, the experimental value of the actual surface of the wafer is applied by applying the present invention will be described by examples.
[실시예 1]Example 1
메쉬망컨베이어(1)의 이동속도는 1m/min로 고정한 상태에서의 분사압 조절에 따른 패턴 웨이퍼의 두께 변화와 패턴의 존재 여부를 비교하였으며, 그 결과는 아래 표 1과 도 3에 나타내었다.Moving speed of the mesh network conveyor (1) was compared with the thickness change of the pattern wafer and the presence of the pattern according to the injection pressure control in a fixed state of 1m / min, the results are shown in Table 1 and Figure 3 below.
[표 1]TABLE 1
패턴이 지워져서 나오는 웨이퍼(W)의 최대 수량은 8인치 웨이퍼를 기준으로 4.5ea/min이며, 웨이퍼(W)의 사이즈와 관계없이 두께의 연마정도는 위의 데이터와 동일한 수준으로 결과가 발생하였다.The maximum number of wafers (W) that came out of the pattern was 4.5ea / min based on the 8-inch wafer, and the polishing degree of the thickness was the same as the above data regardless of the size of the wafer (W).
실시중에 분진은 외부에 유출없이 효과적으로 집진기(9)로 모여졌으며, 사이클론(7)을 통하여 걸러진 입자가 큰 연마재는 연속적으로 자동 재생이 가능하였다.During the execution, dust was effectively collected in the dust collector 9 without leaking to the outside, and the abrasive grains filtered through the cyclone 7 could be continuously and automatically recycled.
상기의 표 1과 같이 분사압이 낮을수록 웨이퍼(W)의 연마 두께가 작으나 웨이퍼(W)에 인쇄된 패턴은 아주 미세하므로 연마재의 분사압력은 2㎏/㎠이상이면 되고, 또 5㎏/㎠를 초과하면 웨이퍼(W)의 두께가 너무 얇아져 재활용하기 어려움을 알 수 있다.As shown in Table 1, the lower the injection pressure, the smaller the polishing thickness of the wafer W, but since the pattern printed on the wafer W is very fine, the injection pressure of the abrasive should be 2 kg / cm 2 or more, and 5 kg / ㎠ If it exceeds the thickness of the wafer (W) is too thin it can be seen that it is difficult to recycle.
이상에서 설명한 바와 같이 본 발명은 패턴 불량 웨이퍼를 이송하면서 미세 세라믹 분말을 공기압으로 분사하기만 하면 불량 패턴이 제거되므로 그 제거방법이 매우 간단하고, 또 연마재로 사용된 미세 세라믹 분말을 수거하여 재사용하게 되므로 처리비용도 최소한으로 줄일 수 있으며, 모든 공정이 자동으로 연속 진행되므로 그동안 버려졌던 많은 수의 패턴 불량 웨이퍼를 적은 시간내에 많은 량 재생할 수 있는 이점이 있다.As described above, the present invention is very simple to remove the defective pattern by simply spraying the fine ceramic powder with air pressure while transferring the defective pattern wafer, and the fine ceramic powder used as the abrasive is collected and reused. As a result, processing costs can be reduced to a minimum, and since all processes are performed automatically and continuously, there is an advantage in that a large amount of pattern defect wafers discarded in the past can be recycled in a short time.
또한, 이와 같이 재생된 웨이퍼는 태양전지판 소재로 재활용하게 되면 고가의 웨이퍼를 태양전지판 용도로 제조하지 않아도 되므로 자원재활용성을 높일 수 있으며, 그 표면에 다시 회로패턴을 인쇄하여 반도체용 웨이퍼로 활용할 수도 있는 것이다.In addition, if the recycled wafer is recycled as a solar panel material, expensive wafers do not have to be manufactured for solar panel use, and thus, resource recycling can be improved, and circuit patterns can be printed on the surface and used as wafers for semiconductors. It is.
도 1은 본 발명에 따른 반도체 웨이퍼의 인쇄패턴 제거장치의 구성도.1 is a block diagram of an apparatus for removing a printed pattern of a semiconductor wafer according to the present invention.
도 2는 본 발명에 따른 반도체 웨이퍼의 인쇄패턴 제거장치의 외형도.2 is an external view of a printing pattern removing device of a semiconductor wafer according to the present invention.
도 3은 본 발명에 따른 실험치를 나타낸 그래프.Figure 3 is a graph showing the experimental value according to the present invention.
*** 도면의 주요 부분에 대한 부호의 설명 ****** Explanation of symbols for the main parts of the drawing ***
1 : 메쉬망컨베이어 2 : 투사노즐1: Mesh network conveyor 2: Projection nozzle
3 : 이물질제거노즐 4 : 분진포집통3: foreign material removal nozzle 4: dust collection container
5 : 스크류컨베이어 6 : 분진이송노즐5: Screw Conveyor 6: Dust Transfer Nozzle
7 : 사이클론 8 : 송풍기7: cyclone 8: blower
9 : 집진기 9a : 컬럼필터9: dust collector 9a: column filter
10 : 공기압축기 11,11' : 웨이퍼이탈방지판10: Air compressor 11,11 ': Wafer departure prevention plate
12 : 분진커버 13 : 컨베이어속도제어노브12 Dust cover 13 Conveyor speed control knob
14 : 분사압제어노브 15 : 투시창14: injection pressure control knob 15: see-through window
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| KR1020030073948A KR100545446B1 (en) | 2003-10-22 | 2003-10-22 | Method to remove print pattern of semiconductor wafer and device thereof |
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| KR1020030073948A KR100545446B1 (en) | 2003-10-22 | 2003-10-22 | Method to remove print pattern of semiconductor wafer and device thereof |
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| KR100545446B1 KR100545446B1 (en) | 2006-01-24 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7261617B1 (en) | 2006-04-28 | 2007-08-28 | Youth Tech Co., Ltd. | Semiconductor wafer regenerating system and method |
| KR100786722B1 (en) * | 2007-06-11 | 2007-12-21 | (주)수훈복지 | Method and system for reusing a slicon wafer |
| KR100896072B1 (en) * | 2008-04-29 | 2009-05-07 | (주)실파인 | Device to remove print pattern of semiconductor wafer |
| KR100896074B1 (en) * | 2008-04-29 | 2009-05-07 | (주)실파인 | System to remove print pattern of semiconductor wafer |
| KR200476578Y1 (en) * | 2013-11-15 | 2015-03-11 | 우석기 | Auxiliary dust collecting apparatus in laser fabricating equipment |
| KR102067074B1 (en) * | 2019-06-14 | 2020-01-16 | (주) 엠엠티케이 | By-product collection device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101077499B (en) * | 2006-05-26 | 2010-06-09 | 韩国思飞株式会社 | Semiconductor chip regeneration system |
| KR200476600Y1 (en) * | 2013-01-11 | 2015-03-12 | (주)아모레퍼시픽 | Cosmetic moldings debris removal device |
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2003
- 2003-10-22 KR KR1020030073948A patent/KR100545446B1/en not_active IP Right Cessation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7261617B1 (en) | 2006-04-28 | 2007-08-28 | Youth Tech Co., Ltd. | Semiconductor wafer regenerating system and method |
| KR100786722B1 (en) * | 2007-06-11 | 2007-12-21 | (주)수훈복지 | Method and system for reusing a slicon wafer |
| KR100896072B1 (en) * | 2008-04-29 | 2009-05-07 | (주)실파인 | Device to remove print pattern of semiconductor wafer |
| KR100896074B1 (en) * | 2008-04-29 | 2009-05-07 | (주)실파인 | System to remove print pattern of semiconductor wafer |
| KR200476578Y1 (en) * | 2013-11-15 | 2015-03-11 | 우석기 | Auxiliary dust collecting apparatus in laser fabricating equipment |
| KR102067074B1 (en) * | 2019-06-14 | 2020-01-16 | (주) 엠엠티케이 | By-product collection device |
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| Publication number | Publication date |
|---|---|
| KR100545446B1 (en) | 2006-01-24 |
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