CN101077499B - Semiconductor chip regeneration system - Google Patents
Semiconductor chip regeneration system Download PDFInfo
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- CN101077499B CN101077499B CN2006100899380A CN200610089938A CN101077499B CN 101077499 B CN101077499 B CN 101077499B CN 2006100899380 A CN2006100899380 A CN 2006100899380A CN 200610089938 A CN200610089938 A CN 200610089938A CN 101077499 B CN101077499 B CN 101077499B
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Abstract
The semiconductor chip regenerating system blasts sand to the semiconductor chip to eliminate manufactured pattern for reuse. The system includes one meshed conveyer for conveying the semiconductor chip, one sand blasting machine with at least one nozzle over the meshed conveyer for blasting sand to eliminate the pattern, one rocking device for rocking the nozzle, one collecting device below the meshed conveyer to collect the sand, scraps and dust, one separating device to separate sand from other collected matters, and one dust collector connected to the separating device for collecting dust.
Description
Technical field
The present invention relates to semiconductor chip regeneration system and method, and more specifically, relate to and be used to remove the pattern that forms on the semiconductor wafer can reuse the system and method for semiconductor wafer.
Background technology
The semiconductor integrated circuit (IC) that exists in the daily Electrical and Electronic device is created by multistep rapid a series of sensitization and chemical treatment step, during described step, creates electronic circuit gradually on the wafer of being made by the pure semiconductor material.Look back the semiconductor devices manufacturing in further detail, the grown one-tenth single-wafer cylindricality of extremely pure semi-conducting material (for example silicon) ingot, described then ingot is sliced into the thick wafer of about 0.75mm, and polished to obtain very smooth surface.In case prepared wafer, just use various treatment steps, for example chemical vapour deposition (CVD), etching, photoetching and diffusion and/or ion inject, and form transistor on silicon wafer.After creating various semiconductor devices, they are interconnected to form anticipation circuit by metal interconnected lead.
Consider the character of the height serializing of processing of wafers, between various treatment steps, carry out wafer sort and still well and not damaged by former treatment step with the check wafer.If be measured as the predetermined threshold that outnumbered of small pieces (that is potential chip part) on the wafer of fault, then wafer is dropped rather than puts in the further processing.On the other hand, finish metal interconnected after, semiconductor devices stands multiple electric test, and whether function is normal to determine them.Use the test of small probe performer, described probe is with a bad chip of dye marker.Be found in expression under the sufficiently high situation of qualification rate (yield) of the normal device ratio of operation on the wafer, wafer is fractured into independent small pieces, and each in the small pieces all is bonded on the lead frame and is packed.Yet, if qualification rate under predetermined threshold, wafer is dropped.
Fail to have kept circuit pattern and can not be used for other purpose, and thereby typically fragmentated and by being thrown away underground by stone roller by the wafer that abandons of wafer sort or device detection.The disposal like this that abandons wafer causes the waste of expensive resource wafer, and may bring environmental pollution.Therefore, need be used to reclaim the method that abandons wafer strongly.
Abandon wafer for recovery and carried out some trials.For example, the name that was presented to Rui Sa scientific ﹠ technical corporation (Renesas Technology Corp.) on March 16th, 2004 U.S. Patent number 6,706,636 that is called the method for semiconductor wafer " regeneration " has disclosed the method for using the regeneration semiconductor wafer of mixed acid.According to this method, wafer is polished to be immersed in the mixed acid then.Afterwards, on wafer, carry out the surface of surface treatment, carry out high-temperature annealing process then with final acquisition regeneration wafer with the leveling wafer.Yet the method for disclosure efficient in the following areas is low: the treatment step that comprises in the regenerative process is few inadequately, and this makes that this method is consuming time.Further, polishing and wafer is immersed in guarantees to have shown the ion implanted region territory of the physical characteristic that is different from pure silicon and the removal fully that is formed into the groove in the surface dearly in the mixed acid simply.In addition, use several acid to increase the cost of regeneration wafer.
The U.S. Patent Application Publication No. US 2005/0092349 that the name of announcing on May 5th, 2005 is called " method that reclaims silicon wafer " has disclosed by the regenerate method of semiconductor wafer of etching, polishing and heat treated consecutive steps.Among various steps, this trial concentrates on the heat treatment wafer 20 minutes to 5 hours.As a result, this method may be consuming time and poor efficiency many.
As mentioned above, conventional method has shown the poor efficiency of regeneration semiconductor wafer, and cost is high owing to using a large amount of chemicals and grinding agent.So, from an economic point of view, the wafer regeneration techniques of prior art just provides benefit seldom.
Summary of the invention
In order to address the above problem, an object of the present invention is to provide such semiconductor chip regeneration system, described semiconductor chip regeneration system can be easily and is removed the manufacturing pattern that forms on the semiconductor wafer effectively, can reuse semiconductor wafer.
Another object of the present invention provides and is used for removing easily and effectively the manufacturing pattern that forms on the semiconductor wafer can reuse the method for semiconductor wafer.
Be used to realize that the semiconductor chip regeneration system of one of above-mentioned purpose is by removing the pattern of semiconductor wafer in the mode of doing on the surface that sand grains is ejected into semiconductor wafer.
Described system comprises mesh conveyer, sand-blasting machine, rocking equipment, gathering-device, separator and dust arrester.The mesh conveyer transmits the supine semiconductor wafer of pattern.Sand-blasting machine is installed on the mesh conveyer, and has at least one injection nozzle, is used for the direction injected sand towards semiconductor wafer surface, to remove pattern from semiconductor wafer.Rocking equipment is perpendicular to wave injection nozzle on the plane of the transfer path of the semiconductor wafer of mesh conveyer.Gathering-device is provided under the mesh conveyer, and collects the powder that comprises sand grains, chip and dust that drops from the mesh conveyer.Separator is connected to gathering-device with sand grains and chip and dust separation.Dust arrester is connected to separator to collect the dust that is separated by separator.
Preferably, the lip-deep sand grains that is injected into semiconductor wafer is being recovered by the separator after separating, and this makes that total process cost effect is worthwhile.
Preferably, pallet unloader (de-stacker) automatically is fed to semiconductor wafer on the mesh conveyer.
According to being used for realizing another semiconductor wafer renovation process of above-mentioned purpose, at first toast semiconductor wafer, so that remove the diaphragm that applies on moisture and the semiconductor wafer.Subsequently, semiconductor wafer is placed on the mesh conveyer under the supine condition of pattern and transmits.When semiconductor wafer transmits on the mesh conveyer, utilize sand-blasting machine sand grains to be ejected on the surface of semiconductor wafer to remove pattern from semiconductor wafer with at least one injection nozzle.At this moment, the transfer path that injection nozzle is crossed over wafer waves, and is beneficial to even injection.Afterwards, below the mesh conveyer, collect the powder comprise the sand grains, chip and the dust that drop from the mesh conveyer.From dust, separate sand grains and chip to be recycled to sand-blasting machine.
According to the present invention, can remove the circuit pattern that forms in the semiconductor wafer with simple, quick and effective and efficient manner, thus the regeneration semiconductor wafer.Can use the semiconductor wafer by the present invention's regeneration in such application, the wafer that needs less flatness and purity, for example manufacturing of solar cell or analog are compared in described application with integrated circuit.Owing to the pattern of removing silicon wafer with the dry method that uses sandblast technology, can easily handle chip and the powder the dust (P) that in pattern removal process, produces so the invention enables.This allows sand grains and chip to be repeated to use, and it is worthwhile that it makes pattern remove the process cost effect.In addition, can supply silicon wafer to sand-blasting machine in automatic mode, this helps the additional income rate to a great extent.
Description of drawings
By describing its preferred embodiment with reference to the accompanying drawings in detail, above-mentioned and other purposes of the present invention, feature and advantage will become more obvious, wherein:
Fig. 1 is the front view of semiconductor chip regeneration system according to the preferred embodiment of the invention;
Fig. 2 is the side view of the semiconductor chip regeneration system that shows among Fig. 1;
Fig. 3 is the sectional view of the mesh conveyer, sand-blasting machine, cleaning nozzle and the powder collector unit that use in the semiconductor chip regeneration system that shows in the depiction 1;
Fig. 4 is the perspective view that shows the mesh conveyer, sand-blasting machine, cleaning nozzle and the rocking equipment that use in the semiconductor chip regeneration system that shows among Fig. 1;
Fig. 5 is the side view that shows the mesh conveyer, sand-blasting machine and the rocking equipment that use in the semiconductor chip regeneration system that shows among Fig. 1;
Fig. 6 is the block diagram that shows the sand-blasting machine that uses in the semiconductor chip regeneration system that shows among Fig. 1;
Fig. 7 shows the sand grains feeding mechanism that uses in the semiconductor chip regeneration system that shows among Fig. 1 and the sectional view of cyclone separator;
Fig. 8 is the sectional view that shows the dust arrester that uses in the semiconductor chip regeneration system that shows among Fig. 1;
Fig. 9 is the block diagram that shows the controller that uses in the semiconductor chip regeneration system that shows among Fig. 1;
Figure 10 is the perspective view that shows the pallet unloader that uses in the semiconductor chip regeneration system of the present invention;
Figure 11 is the front view that shows the pallet unloader that shows among Figure 10;
Figure 12 is the side view that shows the pallet unloader that shows among Figure 10;
Figure 13 is the top view that shows the pallet unloader that shows among Figure 10;
Figure 14 shows the block diagram be used for the controller that uses in the pallet unloader that Figure 10 shows;
Figure 15 is the sectional view that shows the embodiment of the apparatus for baking that uses in the semiconductor chip regeneration system of the present invention; And
Figure 16 is the flow chart that is used to explain according to silicon wafer renovation process of the present invention.
The specific embodiment
With reference to Fig. 1 and 2, semiconductor chip regeneration system (being known as " chip regeneration system " hereinafter) comprises framework 10 according to the preferred embodiment of the invention, is provided for transmitting the mesh conveyer 20 of silicon wafer 1 on described framework 10.Equally, on framework 10, provide with being in line and to surround above the mesh conveyer 20 and the jet chamber 60 and the clean room 65 of side.60 the insides provide sand-blasting machine in the jet chamber, and it is ejected on the silicon wafer sand grains and compressed air together to remove the pattern that forms on the silicon wafer.Meanwhile, provide cleaning nozzle in clean room 65 the insides, it uses compressed air to blow the impurity that remains on the wafer surface off.
On the other hand, collector unit 90 is provided below mesh conveyer 20, its collection walk around wafer sand grains, impacting wafer with the sand grains that rebounded by wafer after removing pattern, by the impacting wafer generation sand grains (G) chip, from the insulating materials of wafer-separate and/or the metal interconnected fragment and the broken end of wafer and sand grains.In comprising this specification of claim, term " sand grains (G) " is generally used for referring to the initial sand grains that replenishes, walks around the sand grains of wafer, at the chip of impacting wafer with the sand grains that rebounded by wafer after removing pattern and the sand grains (G) by the impacting wafer generation.Term " chip (C) " is generally used for referring to from the insulating materials of wafer-separate and/or metal interconnected fragment.Term " dust (D) " is used in reference to the broken end of wafer and sand grains.In addition, term " powder (P) " is used in reference to the set of sand grains (G), chip (C) and dust (D).
The cyclone separator 100 that is connected to collector unit 90 receives powders (P) from collector unit 90, with from dust (D) centrifugation sand grains (G) and chip (C).The dust arrester 110 that is connected to cyclone separator 100 is collected from the dust of cyclone separator 100 dischargings.
With reference to figure 3, mesh conveyer 20 is made up of driving wheel 21, driven pulley 22, mesh conveyer belt 23 and motor 24.Provide driving wheel 21 and driven pulley 22 along the moving direction of silicon wafer 1 with the relation of spaced apart.Twine mesh conveyer belt 23 around driving wheel 21 and driven pulley 22.With the pattern plane that forms on the silicon wafer 1 to upward to mode on mesh conveyer belt 23, place silicon wafer 1 continuously.Mesh conveyer belt 23 is preferably made by stainless steel wire, and has such mesh aperture, and described mesh aperture for example has the approximately size of 10-20mm2.Motor (indicating with reference number 24 in Fig. 5) is installed in a side of framework 10, and can generate driving force, and it is transmitted to driving wheel 21 by belt gear (indicating with reference number 25) in Fig. 5.Motor can be made up of gear motor, and described gear motor has with the ability of reduced ratio to driving wheel 21 transmission driving forces.
The upstream extremity of mesh conveyer 20 is exposed to the outside of jet chamber 60, is loaded onto in the jet chamber 60 to allow silicon wafer 1.Equally, the downstream of mesh conveyer 20 is exposed to the outside of clean room 65, is unloaded from clean room 65 to allow silicon wafer 1.Although separate with jet chamber 60 in the present embodiment clean room 65 be provided, but, selectively, arrange cleaning nozzle 32 by the downstream area place within the first passage 61 of jet chamber 60, and in first passage 61, provide divider wall to isolate sand-blasting machine 30 and cleaning nozzle 32, can from system, remove clean room 65.
Sand-blasting machine 30 comprises a plurality of blast nozzles 31, compressed air feeding unit 40 and sand grains feeding unit 50.Arrange blast nozzle 31 along the longitudinal direction of mesh conveyer 20, so that the direction on the surface of the silicon wafer 1 that they can be placed and move on the mesh conveyer belt 23 of mesh conveyer 20 is sprayed compressed air and sand grains.
With reference to figure 6, compressed air feeding unit 40 comprises air compressor 41, gas container 42, air dryer 43 and a plurality of air line 44.The side that air compressor 41 approaches framework 10 provides, and remains connected to gas container 42, and described gas container 42 communicates with air dryer 43 successively.The compressed air that generates by air compressor 41 is stored in the gas container 42, and from described gas container 42, air is supplied to air dryer 43.Air dryer 43 is used for eliminating the impurity such as moisture, oil, dust and analog that comprises in the compressed air, and plays the part of the role of control compressed air flow velocity.Air dryer 43 can be made up of the air control module, and described air control module can be eliminated impurity and the control velocity of compressed air that comprises in the compressed air.Air dryer 43 is connected to blast nozzle 31 by air line 44, so as can be from blast nozzle 31 towards silicon wafer the direction on 1 surface spray from the compressed air of air dryer 43 supplies.
With reference to figure 7, sand grains feeding unit 50 comprises: storage tank 51 is used to store a large amount of sand grains; And a plurality of sand grains pipelines 52, be used to interconnect blast nozzle 31 and storage tank 51 are to provide passage, and by described passage, the sand grains of storage is supplied to blast nozzle 31 in the storage tank 51.The example of sand grains comprises aluminium oxide, carborundum and particulate, bead, the steel ball of pottery and the chip that separates from silicon wafer traditionally.Among these, the particulate of aluminium oxide, carborundum and pottery can have for example granularity of 10-80 μ m.
With reference to Figure 4 and 5, silicon wafer regenerative system according to the present invention further comprises rocking equipment 70, is used for blast nozzle 31 is rocked to the direction vertical with the moving direction of silicon wafer 1.Rocking equipment 70 by main shaft 71, wave motor 72 and connecting rod 80 is formed.Main shaft 71 extends abreast with the moving direction of silicon wafer 1, and its opposite end is rotatably supported by pair of bearings 73.Bearing 73 is fixedly connected to the opposite end of jet chamber 60.One end of main shaft 71 stretches out by jet chamber 60.A plurality of support bars 74 invest main shaft 71 along the moving direction of silicon wafer 1 with the relation of spaced apart.Blast nozzle 31 is respectively fixed to the lower end of support bar 74.Wave motor 72 and be installed in the outside of jet chamber 60.
Connecting rod 80 is used in the mode that main shaft 71 is waved main shaft 71 is changed and be delivered to the revolving force of motor 72.Connecting rod 80 is made up of disk 81, first connecting rod 83 and second connecting rod 84.Disk 81 is installed to the axle 72a of motor 72, and has the guide groove 82 that extends in the radial direction.First connecting rod 83 is at an end equipment screw 85, and described screw 85 is assembled in the guide groove 81 successively slidably.One end of second connecting rod 84 is connected to the other end of first connecting rod 83 by trunnion 86, is used for rotating about the latter.The other end of second connecting rod 84 is fixedly connected to the end of main shaft 71.
If the driving force of motor 72 is transferred to main shaft 71 by disk 81, first connecting rod 83 and second connecting rod 84, main shaft 71 is waved.Along with the oscillating motions of main shaft 71 experience, the sand grains initial impact of spraying from blast nozzle 31 impinges upon outer peripheral areas then at the center of silicon wafer 1, and the whole surface of so just having guaranteed silicon wafer 1 is all by sand impinging.Although blast nozzle 31 is arranged to two row along the moving direction of silicon wafer 1 in Figure 4 and 5, this is for for the purpose of showing, and if desired, blast nozzle 31 can be arranged to single file.And then blast nozzle 31 can be installed by this way: they can do linear reciprocal movement on the direction of the moving direction that crosses silicon wafer 1.Meanwhile, if the operator loosens the screw 85 of first connecting rod 83, it is moved along guide groove 82, so just becoming to be placed on an end of first connecting rod 83 center of disk 81 and any position between the peripheral edge.Along with an end of first connecting rod 83 being placed to such an extent that to leave the center of disk 81 farther that is nearer from peripheral edge, the angle of waving of main shaft 71 becomes bigger.
Return with reference to figure 3, collector unit 90 is made up of a plurality of funnels 91, the first powder pipeline 92 and the second powder pipeline 93.In the funnel 91 each all has: import 91a, and it was positioned near mesh conveyer 20 following; And outlet 91b, it is connected to the first powder pipeline 92.The first powder pipeline 92 is connected to the second powder pipeline 93 in an one end, and by the described second powder pipeline 93, powder (P) is discharged into the outside.At the top of funnel 91 first screen filter 94 is installed, it can leach the fragment of silicon wafer 1.Near the upstream termination of the second powder pipeline 93 the first powder pipeline 92 is partly located, and equipment can leach second screen filter 95 of size greater than the chip (C) of sand grains (G).
With reference to figure 7, cyclone separator 100 is equipped with vertical shell 101, and it has chamber 102.Shell 101 side-walls thereon has the import 103 that is connected to the second powder pipeline 93, and has outlet 104 at its place, bottom, by described outlet 104 discharging chip (C) and sand grains (G).The top center of shell 101 is connected to outlet 105, discharges dusts (D) by described outlet 105 from chamber 102.The outlet 104 of shell 101 is connected to the storage tank 51 of sand grains feeding unit 50 by sand grains return line 53.Although the storage tank 51 of the shell 101 of cyclone separator 100 and sand grains feeding unit 50 is placed on the top of jet chamber 60 in Fig. 1 and 2, if desired, they can be from the jet chamber 60 separate, and are placed on other suitable positions.
With reference to figure 8, dust arrester 110 is equipped with vertical shell 111, and it has chamber 112.Shell 111 has import 113 in its A lower side wall portion office, and the side wall portion office has outlet 143 thereon.The import 113 of shell 111 is connected to the outlet 105 of cyclone separator 100 by dust pipeline 115.At the top of chamber 112 equipment spacer 116, be used for chamber 112 is divided into two compartments.Thickness by spacer 116 forms a plurality of aperture 116a that allow the air process.The a plurality of filters 118 that are used to filter dust are mounted to the aperture 116a of spacer 116.At the lower disposed funnel 117 of chamber 112, it helps dust to move down.
Although the dust arrester 110 in this demonstration and explanation is air upwelling ejector half that the direction towards outlet 114 upwards flows from import 113, dust arrester 110 can be changed over the sinking ejector half that import and outlet are exchanged.In addition, although the dust arrester 110 in this demonstration and explanation is the dry type types of filtering dust by filter 118, but if such needs can replace its dust arrester that uses other types, such as wet collector, electrostatic (electric dust) precipitator or similar dust arrester.
With reference to figure 9, equipment controller 140 is with the motor 24 of control mesh conveyer 20, air compressor 41 and air dryer 43, the air blast 119 that waves motor 72, dust arrester 110 of rocking equipment 70 and the air compressor 131 of hair-dryer 130 of compressed air feeding unit 40.Controller 140 preferably is installed to the sidewall of jet chamber 60.
In silicon wafer regenerative system according to the present invention, preferably, silicon wafer 1 is placed on the mesh conveyer belt 23 one by one automatically.Figure 10 to 14 has shown the embodiment of pallet unloader 200, and the upstream side that it is equipped in mesh conveyer 20 is used for loading continuously one by one silicon wafer 1 on mesh conveyer 20.Pallet unloader 200 comprises framework 210, tractor-drawn rake 220, lifting device 230, feeder 240, vacuum attraction unit 250, hair-dryer 260, compressed air feeding unit 270 and controller 280.Framework 210 comprises pedestal 211 and first and second bogie side frames of equipping at the opposite side of pedestal 211 212 and 213.
Shown in Figure 10 to 13, tractor-drawn rake 220 is installed in the center of pedestal 211, is used for one and piles up a large amount of silicon wafer 1 on another.Tractor-drawn rake 220 comprises a plurality of support bars 222, and its vertical extension with regulation stackeding space 221 can be held silicon wafer 1 in the mode of multilayer within described stackeding space 221.As tangible among Figure 13, arrange support bar 222 along stackeding space 221 about the imaginary circle of the latter half of office of horizontal center line 223, so that can be from the front loaded silicon wafer 1 of stackeding space 221.Top fixed head 224, bottom fixed board 225 and center fixed plate 226 are fixed to top, bottom and the middle part of support bar 222.The a plurality of bracing pieces 227 that are used to strengthen the mechanical strength of tractor-drawn rake 220 invest bottom fixed board 225 and center fixed plate 226 in their relative end.
Just in time on center fixed plate 226, the platform 228 that is used to transport silicon wafer 1 is mounted to support bar 222, is used for along its slip.Top fixed head 224 and platform 228 are equipped with the locating hole 224a and the 228a of a plurality of radial arrangement respectively, and wherein, a plurality of backstays 229 penetrate described locating hole 224a and 228a with the relation that the diameter with silicon wafer 1 mates, to contact with the latter's periphery.Backstay 229 can support the silicon wafer 1 of diameter up to 300mm.Can change the radial position of backstay 229, diameter is the peripheral edge of the silicon wafer 1 of 100mm, 125mm, 150mm and 200mm so that for example support reliably.
The silicon wafer 1-1 that goes up most among the silicon wafer 1 that lifting device 230 is used for piling up within the stackeding space 221 of tractor-drawn rake 220 lifts on the P1 of spare space.Lifting device 230 is made up of first cylinder 231 and first straight guiding 233.First cylinder 231 comprises the cylinder baffle 231a that vertically place the center of tractor-drawn rake 220.The bottom of cylinder baffle 231a is pivotably connected to the end face of pedestal 211.First cylinder 231 further comprises air cylinder tie rod 231b, its top invest pivotly platform 228 below.First straight guiding, 233 helpdesks 228 are done straight reciprocating motion.First straight guiding 233 is made up of following: a pair of vertically extending guide rail 233a, and it is respectively installed to the inner surface of first and second bogie side frames 212 and 213; A pair of slider 233b, itself and corresponding guide rail 233a mate, and are used for along its slip; And pair of joint 233c, it interconnects each slider 233b and platform 228.
Selectively, lifting device 230 can be made up of following: servomotor is used to generate driving force; Driving screw is connected to servomotor to its running, is used for rotating together with servomotor; Ball lining (ball bush), itself and driving screw screw-threaded engagement, and be fixedly connected to platform 228, be used for moving as unit along the ball lining; And straight guiding, its helpdesk 228 is done straight reciprocating motion in vertical direction.And then, can form by following at first straight guiding 233 of this demonstration and explanation: a pair of vertically extending parallel guide bars, it is installed to framework 210; And a pair of pilot bushing, it combines with guide post and is used for sliding, and is fixedly connected to platform 228.
Shown in Figure 11 and 12, vacuum attraction unit 250 has vacuum pad 251, and it invests the following of carriage 243 and is connected to vavuum pump 252, and described vavuum pump 252 is used for generating suction by air line 253.Along with thereby first cylinder 231 of operation lifting device 230 extends air cylinder tie rod 231b, the silicon wafer 1-1 that goes up most is more near the vacuum pad 251 of standby position.Under this situation, if vavuum pump 252 produces suction, the silicon wafer 1-1 that then goes up is most picked up with vacuum pad 251 and is contacted.
As shown in figure 11, hair-dryer 260 is used for spraying compressed air, so that the silicon wafer 1-1 that goes up most can separate from the next silicon wafer 1-2 among the silicon wafer 1 of accumulation within the stackeding space 221 of tractor-drawn rake 220.Hair-dryer 260 comprises a plurality of nozzles 261, and they are one of in first and second bogie side frames 212 and 213 that is be that first bogie side frame 212 is arranged in vertical direction in the embodiment that shows.
With reference to Figure 14, compressed air feeding unit 270 is installed on first bogie side frame 212, compressed air is supplied to the nozzle 261 of second cylinder 242 and hair-dryer 260.Although do not show that in the accompanying drawings compressed air feeding unit 270 is made up of air compressor, air controller and air line.Replace compressed air feeding unit 270, can use the compressed air feeding unit 40 of sand-blasting machine 30 for pallet unloader 200.In this case, the air dryer 43 of compressed air feeding unit 40 should be connected to first cylinder 231, second cylinder 242 and the nozzle 261 of pallet unloader 200.Controller 280 is installed in the top of first bogie side frame 212, and the operation of control vavuum pump 252 and compressed air feeding unit 270.
Silicon wafer regenerative system of the present invention may further include the baking unit, is used to remove the diaphragm that applies on moisture and the silicon wafer.Figure 15 has shown such embodiment that cures the unit, and it is from the surface removal moisture and the diaphragm 3 of silicon wafer 1.The unit 300 that cures that shows in the accompanying drawing comprises baking oven 310, conveyer 320 and heater 330.Baking oven 310 has hothouse 311, and is equipped with import 312 and outlet 313 in the opposite side formation of baking oven 310.Conveyer 320 is provided by this way: its upstream and downstream extension is exposed to the outside from baking oven 310.Heater 330 is arranged in the top of hothouse 311, with the mobile together silicon wafer 1 of the conveyer belt 321 of heating and conveyer 320.Selectively, heater 330 can be arranged in below the conveyer belt 321, so that can be with conduction or convective methods heating silicon wafer 1.
Further, baking unit 300 can be arranged in the upstream side of mesh conveyer 20 or pallet unloader 200, perhaps can install individually about mesh conveyer 20 or pallet unloader 200.In addition, can arrange the conveyer 320 of baking unit 300 with mesh conveyer 20 with end to end relation.The baking oven 310 of baking unit 300 can be batch-wise, can eliminate conveyer 320 on the whole under described situation.
Now, main reference Figure 16 will be described the silicon wafer renovation process that is used to use said system to remove the pattern on the silicon wafer.
Totally with reference to Figure 15 and 16, the moisture such as chemicals or water that discharges in semiconductor fabrication is retained under the situation on the silicon wafer 1, and silicon wafer 1 may speckle with moisture.Under these circumstances, because the sand grains (G) that blast nozzle 31 sprays adheres to the fact on the surface of silicon wafer 1, and/or because the impact of 1 pair of sand grains of silicon wafer (G) has the fact of damping character, the efficient of removing pattern from silicon wafer 1 may reduce.In addition, the impact of 3 pairs of sand grains of diaphragm (G) of coating has damping character on the pattern 2 of silicon wafer 1.
Consider this, at first the baking during experiment unit 300, to remove moisture and diaphragm 3 (S10) from silicon wafer 1.For this purpose, silicon wafer 1 is loaded on the conveyer belt 321 of conveyer 320, this moment, silicon wafer 1 can be placed in the mode of multilayer on the conveyer belt 321 of conveyer 320.Move conveyer 320 then, so that the import 312 of silicon wafer 1 by baking oven 310 is fed in the hothouse 311, and heater 330 is supplied to energy, thus the moisture to leave on heating silicon wafer 1 and the evaporation silicon wafer 1.For example, can remove the diaphragm 3 of silicon wafer 1 by baking silicon wafer under about 700-800 ℃ temperature 1 about 20-30 minute.By operation conveyer 320, the outlet 313 by baking oven 310 is discharged moistures and diaphragm from the silicon wafer 1 of its removal from hothouse 311.Can strengthen sandblast efficient by following: remove moisture and diaphragm by bake process from silicon wafer 1, thereby and make silicon wafer 1 drying by this way.
With reference to figure 1,2 and 10 to 13,1 one of silicon wafers are deposited on another within stackeding space 221 of tractor-drawn rake 200, so that the pattern 2 of silicon wafer 1 can be in the face of direction (S11) upwards.Before piling up silicon wafer 1, according to the size of silicon wafer 1, by the locating hole 224a and the 228a insertion backstay 229 of top fixed head 224 and platform 228.This has guaranteed that silicon wafer 1 touches backstay 229 at their peripheral edge place and alignment inside it.By means of support bar 222, remove backstay 229 simultaneously, the silicon wafer of diameter 30mm can align in place.
Next step, operation pallet unloader 200 extends with the upstream of the mesh conveyer belt 23 that silicon wafer 1 is loaded into one by one continuously mesh conveyer 20 and to go up (S12).If first cylinder 231 that starts lifting device 230 is to extend air cylinder tie rod 231b, then silicon wafer 1 and platform 228 are picked up together.Be the slider 233b of sliding motion, the ascending motion of straight line guide platform 228 by means of guide rail 233a along first straight guiding 233.Along with lifting platform 228 by this way, the silicon wafer 1-1 that goes up most arrives spare space P1, and is positioned near the vacuum pad 251 of vacuum attraction unit 250.
Start vavuum pump 262 to generate suction, by described suction, the silicon wafer 1-1 that goes up is most picked up vacuum pad 251.The silicon wafer 1-1 that goes up most separates with next silicon wafer 1-2 by the compressed air that the nozzle 261 from hair-dryer 260 sprays, as shown in figure 11.
With reference to figure 3,4 and 12, after the silicon wafer 1-1 that goes up was most picked up by the vacuum pad 251 of vacuum attraction unit 250, second cylinder 242 of operation feeder 240 was to extend air cylinder tie rod 242b.In response, carriage 243 and vacuum pad 251 move together towards the direction of the front end of arm 241.Go up most on the mesh conveyer belt 23 that silicon wafer 1-1 arrives mesh conveyer 20 if the vacuum pad 251 of vacuum attraction unit 250 transports, then out of service the and regeneration suction not of vavuum pump 252.This allows the silicon wafer 1-1 that goes up most to separate from vacuum pad 251, is sent to mesh conveyer belt 23 then.If the motor 24 of mesh conveyer 20 begins rotation in this state, then the driving force of motor 24 is transferred to driving wheel 21 by belt gear 25, as response, around mesh conveyer belt 23 entrys into service of driving wheel 21 and driven pulley 22 windings to this.Along with mesh conveyer belt 23 running, the silicon wafer 1-1 that goes up most from upstream side side transportation downstream.
Meanwhile, after the silicon wafer 1-1 that goes up most has been loaded onto on the mesh conveyer 20 under the effect of feeder 240, the air cylinder tie rod 242b of second cylinder 242 that withdraws, thus make carriage 243 and vacuum pad 251 turn back to their initial position.Along with vacuum pad 251 turns back to initial position, first cylinder 231 is started once more, and carries out the same operation as doing about the silicon wafer 1-1 that goes up most.This allows next silicon wafer 1-2 to move up and is picked up by vacuum pad 251.Next silicon wafer 1-2 is loaded onto the upstream side of mesh conveyer 20 under the effect of feeder 240.Selectively, silicon wafer 1 can manually be loaded on the mesh conveyer 20 by the operator.
With reference to figure 3,5 and 6, mesh conveyer 20 continues operation, and along the jet chamber 60 first passage 61 transportation silicon wafers 1 (S13).Towards the direction injected sand (G) on the surface of the silicon wafer 1 that moves, to remove the defect pattern 2 (S14) of silicon wafer 1.In this process, the air compressor 41 of operation compressed air feeding unit 40, compressed air being supplied to blast nozzle 31, described blast nozzle 31 sprays compressed air and sand grains (G) towards the direction on the surface of the silicon wafer 1 of mesh conveyer belt 23 transportations successively.Sand grains (G) bump that so sprays and the pattern 2 of removing silicon wafer 1.
Remove powder (P) (S15) from the surface of the removed silicon wafer 1 of pattern 2.In this process, by operation mesh conveyer 20, with pattern 2 in the first passage 61 of jet chamber 60 removed silicon wafer 1 be sent to the second channel 66 of clean room 65.Cleaning nozzle 32 one of from the air line 44 that remains connected to compressed air feeding unit 40 sprays compressed air.Remove powder (P) from the surface of silicon wafer 1 by compressed air.The silicon wafer 1 that powder (P) has been removed is moved second channel 66 through clean room 65 towards the downstream direction of mesh conveyer 20, and in the downstream of described mesh conveyer 20, silicon wafer 1 is by from 20 unloadings of mesh conveyer.The removed by this way silicon wafer 1 of defect pattern 2 can be as the silicon wafer that for example is used for solar cell.
As shown in Figure 3, in the first powder pipeline 92, collect the powder (P) that comprises wafer debris (C), dust (D) and sand grains (G) that drops from the mesh conveyer belt 23 of mesh conveyer 20 via funnel 91.Silicon wafer 1 may be fragmented into fragment B in the process of removing pattern 2 by the sandblast operation.For the fragment B of most silicon wafer 1, they can not pass through mesh conveyer belt 23.Have more undersized fragment B and drop, and leach by means of first screen filter 94 by mesh conveyer belt 23.This has prevented that the first powder pipeline 92 from being blocked by fragment B.
With reference to figure 1 and 7, the powder of collecting in the first powder pipeline 92 of collector unit 90 (P) is supplied to cyclone separator 100, isolates dust (D) (S17) there from chip (C) and sand grains (G).More specifically, the air blast 119 of operation dust arrester 110 is to generate vacuum pressure, and by described vacuum pressure, the powder of collecting in the first powder pipeline 92 (P) is supplied to cyclone separator 100 by the second powder pipeline 93.Second screen filter 95 that provides between the first powder pipeline 92 and the second powder pipeline 93 leaches such chip (C), and the particle size of described chip (C) is for example greater than 80 μ m.Leach large-sized chip (C) at the upstream side of the second powder pipeline 93 and guaranteed that the second powder pipeline 93, blast nozzle 31 and sand grains pipeline 52 prevent to be subjected to any undesired obstruction.The powder (P) that import 103 by shell 101 is introduced in the chamber 102 is classified under the effect of swirling eddy.Chip (C) and sand grains (G) with the particle size that for example is not less than 10 μ m clash on the inner surface of shell 101, then by outlet 104 dischargings, the dust (D) that has less than the particle size of 10 μ m is then delivered by swirling eddy, discharges by outlet 105 then.
In the storage tank 51 that the chip (C) of discharging and sand grains (G) are recycled to sand grains feeding unit 50 from the chamber 102 of cyclone separator 100 (S18).Particularly, operation air compressor 41 is to supply compressed air by air line 44 to blast nozzle 31.Along with spraying compressed air, in being connected to the sand grains pipeline 52 of blast nozzle 31, produce vacuum pressure from blast nozzle 31.Under the effect of vacuum pressure, the chip (C) and the sand grains (G) of discharging are recycled in the storage tank 51 by sand grains return line 53 from the chamber 102 of cyclone separator 100.So chip (C) that reclaims and sand grains (G) are by blast nozzle 31 recirculation of sand-blasting machine 30.
With reference to figure 1 and 8, by filter removing the dust (D) of discharging (S19) by the outlet 105 of cyclone separator 100.Particularly, if the air blast 119 of operation dust arrester 110 is to generate vacuum pressure, then the dust (D) of discharging by the outlet 105 of cyclone separator 100 is supplied to chamber 112 by dust pipeline 115 and import 113, is filtered off by means of filter 118 then.Under the situation that filter 118 is blocked by dust (D), the air compressor 131 of operation hair-dryer 130 is to generate compressed air, and described compressed air is supplied to nozzle 133 by air line 132 successively.Separate the dust (D) that adheres to filter 118 by the compressed air that sprays from nozzle 133.Dust (D) is then by exporting 114 dischargings and being collected in the disposal box 120.
Although understand the present invention above in detail, should be appreciated that above stated specification is schematic rather than restrictive.For example, although represented above-mentioned explanation with the viewpoint of the wafer made by silicon, the present invention can be used to the wafer of regenerating and being made by the semi-conducting material of the other kind such as GaAs and other compound semiconductors.So, those skilled in the art just will recognize, under the situation that does not deviate from spirit of the present invention or substantive characteristics, can carry out many various modifications to it.We require all modifications within the spirit and scope of following claim and the power of change.
Claims (18)
1. the system of the semiconductor wafer that is used to regenerate, described semiconductor wafer has in the one side makes good pattern, and described system comprises:
The mesh conveyer is used to transmit the supine semiconductor wafer of pattern;
Sand-blasting machine, it is installed on the described mesh conveyer, and has at least one injection nozzle, is used for the direction injected sand towards semiconductor wafer surface, to remove pattern from semiconductor wafer;
Rocking equipment is used for perpendicular to wave described injection nozzle on the plane of the transfer path of the semiconductor wafer of described mesh conveyer;
Gathering-device, it provides under the mesh conveyer, is used to collect the powder that comprises sand grains, chip and dust that drops from described mesh conveyer;
Separator, it is connected to described gathering-device, is used for sand grains is separated with grey method with chip;
Dust arrester, it is connected to described separator, is used to collect the dust that is separated by described separator; And
Pallet unloader is used for semiconductor wafer is loaded into one by one continuously the upstream side of described mesh conveyer;
Wherein, described pallet unloader comprises:
Framework, its upstream side adjacent to described mesh conveyer provides;
Tractor-drawn rake, it is installed on the described framework, and has stackeding space, within described stackeding space, piles up semiconductor wafer for one on another;
The lifting device that described tractor-drawn rake provides below is used for lifting the semiconductor wafer that the stackeding space of described tractor-drawn rake is piled up, with in the semiconductor wafer uppermost one take on the spare space; And
The loading machine that install at the top of described framework is used for controlling uppermost one of the semiconductor wafer that standby position places, to load on described mesh conveyer.
2. the system as claimed in claim 1, wherein, described separator comprises cyclone separator.
3. the system as claimed in claim 1, wherein, described sand-blasting machine comprises:
A plurality of described injection nozzles, its transfer path along semiconductor wafer are arranged on the described mesh conveyer;
The sand grains feeding mechanism, its mode with the fluid passage is connected to described injection nozzle and has the sand grains storage tank, is used for to described injection nozzle supply sand grains; And
Compressed air supply system is used for to described injection nozzle supply compressed air.
4. system as claimed in claim 3, wherein, described sand grains storage tank is connected to described separator, to receive from dust separating sand grains and chip.
5. system as claimed in claim 3 further comprises:
Cleaning nozzle, it is arranged in described injection nozzle back, blows sand grains, chip and the dust that remains on the semiconductor wafer surface off to use compressed air.
6. system as claimed in claim 5 wherein provides the jet chamber on described mesh conveyer, so that regulation is surrounded the first passage of blast nozzle,
Wherein arrange clean room in the downstream of jet chamber, so that regulation is surrounded the second channel of cleaning nozzle,
Wherein arrange described first passage and described second channel along the moving direction of semiconductor wafer.
7. the system as claimed in claim 1, wherein, described rocking equipment comprises:
Main shaft is installed described blast nozzle along the moving direction of semiconductor wafer on described main shaft;
Wave motor, be used to generate revolving force to drive described main shaft; And
Connecting rod interconnects described main shaft and the described motor that waves to its running, and is used for waving the oscillating motion that rotatablely moving of motor converts described main shaft and described blast nozzle to described.
8. system as claimed in claim 7, wherein, described connecting rod comprises:
Disk, it is fixedly connected to the described rotating shaft that waves motor;
First connecting rod, it is pivotably connected to described disk an end; And
Second connecting rod, it is connected to described first connecting rod an end, is used for about the pivot rotation, and is pivotably connected to described main shaft in another end.
9. the system as claimed in claim 1, wherein, described gathering-device comprises:
A plurality of funnels that described mesh conveyer provides below, each in the described funnel all has: import, introduce powder by described import, and outlet, by described outlet discharging powder;
The first powder pipeline, it is connected to each the outlet in the described funnel; And
The second powder pipeline, it interconnects described first powder pipeline and described separator.
10. system as claimed in claim 9 further comprises:
First screen filter that provides on the import of each in the described funnel is used to leach the fragment of semiconductor wafer; And
Second screen filter that the upstream extended spot of the described second powder pipeline provides is used for the chip of filtering particles size greater than sand grains.
11. the system as claimed in claim 1, wherein, described dust arrester comprises:
Shell, it has the chamber that is connected to described separator;
The a plurality of filters that provide within the described shell chamber are used to leach the dust from described separator discharging; And
Be installed to the air blast of described shell, be used to discharge from wherein leaching the air of dust.
12. the system as claimed in claim 1, wherein, described tractor-drawn rake comprises:
A plurality of support bars, it vertically provides on the described framework of described pallet unloader, to stipulate described stackeding space, described support bar is arranged about the imaginary circle of the latter half of office of horizontal center line along stackeding space, so that can be from the front loaded semiconductor wafer of described stackeding space;
Top fixed head and center fixed plate, it is respectively fixed to the top and the middle part of described support bar; And
Be positioned at the platform on the described center fixed plate, be used to transport a semiconductor wafer of piling up on another, described platform is used for doing sliding motion along described support bar.
13. system as claimed in claim 12 wherein, radially arranges a plurality of locating holes on described top fixed head and described platform, and a plurality of backstay is by the assembling of described locating hole, so that keep in touch with the peripheral edge of semiconductor wafer.
14. the system as claimed in claim 1, wherein, described lifting device comprises:
First cylinder, it is vertically installed on the described framework of described pallet unloader, and has the air cylinder tie rod that invests below the described platform; And
First straight guiding, it comprises: a pair of opposed facing guide rail, its relation with spaced apart is fixed to described framework, and a pair of slider, it combines with described guide rail, is used for doing sliding motion along described guide rail, and is connected to the opposite side of described platform.
15. the system as claimed in claim 1, wherein, described loading machine comprises:
Arm, it is installed on the described framework;
Second cylinder, it invests described arm and has air cylinder tie rod;
Carriage, it is connected to the air cylinder tie rod of described second cylinder;
Second straight guiding, it comprises: guide rail, it is installed on the described arm, and slider, and it combines with the guide rail of described second straight guiding slidably, and is connected to described carriage; And
The vacuum attraction unit, its invest described carriage below, and have and be suitable for picking up uppermost one vacuum pad in the semiconductor wafer that standby position settles.
16. the system as claimed in claim 1 further comprises:
The hair-dryer of installing on the described framework is used to spray compressed air, and guaranteeing when described vacuum pad picks up in the semiconductor wafer uppermost one, uppermost one is separated with next semiconductor wafer in the semiconductor wafer.
17. the system as claimed in claim 1 further comprises:
Apparatus for baking is used to toast semiconductor to remove the diaphragm that applies on moisture and the semiconductor wafer.
18. system as claimed in claim 17, wherein, described apparatus for baking comprises:
Baking oven, import and outlet that it has hothouse and path is provided to described hothouse;
Conveyer is used for by the import and the outlet of described baking oven semiconductor wafer being sent to described hothouse and outside thereof; And
Heater, it provides within described hothouse.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100899380A CN101077499B (en) | 2006-05-26 | 2006-05-26 | Semiconductor chip regeneration system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006100899380A CN101077499B (en) | 2006-05-26 | 2006-05-26 | Semiconductor chip regeneration system |
Publications (2)
| Publication Number | Publication Date |
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| CN101077499A CN101077499A (en) | 2007-11-28 |
| CN101077499B true CN101077499B (en) | 2010-06-09 |
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| CN2006100899380A Expired - Fee Related CN101077499B (en) | 2006-05-26 | 2006-05-26 | Semiconductor chip regeneration system |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB817711A (en) * | 1955-01-12 | 1959-08-06 | Bason & Sons Ltd | Improvements in or relating to sand-blasting apparatus |
| US3696565A (en) * | 1970-12-30 | 1972-10-10 | Wheelabrator Frye Inc | Method for deflashing ceramic materials |
| EP0002628A1 (en) * | 1977-12-20 | 1979-06-27 | Lutelec Luchaire Equipement | Automatic sand blasting machine for large-size objects |
| US4561219A (en) * | 1982-12-23 | 1985-12-31 | Fuji Seiki Machine Works Ltd. | Process and apparatus for finishing electronic device |
| US5512005A (en) * | 1992-08-28 | 1996-04-30 | Michael P. Short | Process and apparatus for automatically engraving stone memorial markers |
| US6113475A (en) * | 1998-12-24 | 2000-09-05 | Daiko Electric Co., Ltd. | Method of cleaning container and apparatus therefor |
| US20050092349A1 (en) * | 2003-10-03 | 2005-05-05 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) | Method of reclaiming silicon wafers |
| KR100545446B1 (en) * | 2003-10-22 | 2006-01-24 | 주식회사 유스테크코리아 | Method to remove print pattern of semiconductor wafer and device thereof |
-
2006
- 2006-05-26 CN CN2006100899380A patent/CN101077499B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB817711A (en) * | 1955-01-12 | 1959-08-06 | Bason & Sons Ltd | Improvements in or relating to sand-blasting apparatus |
| US3696565A (en) * | 1970-12-30 | 1972-10-10 | Wheelabrator Frye Inc | Method for deflashing ceramic materials |
| EP0002628A1 (en) * | 1977-12-20 | 1979-06-27 | Lutelec Luchaire Equipement | Automatic sand blasting machine for large-size objects |
| US4561219A (en) * | 1982-12-23 | 1985-12-31 | Fuji Seiki Machine Works Ltd. | Process and apparatus for finishing electronic device |
| US5512005A (en) * | 1992-08-28 | 1996-04-30 | Michael P. Short | Process and apparatus for automatically engraving stone memorial markers |
| US6113475A (en) * | 1998-12-24 | 2000-09-05 | Daiko Electric Co., Ltd. | Method of cleaning container and apparatus therefor |
| US20050092349A1 (en) * | 2003-10-03 | 2005-05-05 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) | Method of reclaiming silicon wafers |
| KR100545446B1 (en) * | 2003-10-22 | 2006-01-24 | 주식회사 유스테크코리아 | Method to remove print pattern of semiconductor wafer and device thereof |
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| Publication number | Publication date |
|---|---|
| CN101077499A (en) | 2007-11-28 |
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