KR20050038048A - Light emitting diode module having integrated electrostatic discharge protection device and package thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultraviolet light emitting diode module resistant to electrostatic shock made by mounting an overvoltage suppression element on an ultraviolet light emitting diode that is weak against electrostatic shock and its packaging. The light emitting diode module of the present invention includes a light emitting diode having an N electrode and a P electrode, an overvoltage suppression element provided with an N electrode and a P electrode, and an amount of electrically connecting the P electrode of the light emitting diode and the N electrode of the overvoltage suppression element. And a lead terminal of which the N lead of the light emitting diode and the P electrode of the overvoltage suppression element are electrically connected to each other, wherein the light emitting diode is disposed at an arbitrary position of the tip of the positive lead terminal and the negative lead terminal. And an overvoltage suppression element.

Description

Static-resistant LED module and its packaging {LIGHT EMITTING DIODE MODULE HAVING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND PACKAGE THEREOF}

The present invention relates to an ultraviolet light-emitting diode module resistant to electrostatic shock made by mounting an ultraviolet light-emitting diode and an overvoltage suppressor which are weak against electrostatic shock, and a packaging thereof.

Light emitting diodes (LEDs) are electro-luminescence diodes that are applied with power and emit visible light when a current flows in a forward direction. As a material of a light emitting diode, GaAsP, GaP, etc. which generate | occur | produce visible light because the number of photons which are light energy more than Si and Ge are radiated enough are used.

The electrostatic discharge phenomenon is a phenomenon in which energy of a charged object is instantaneously released by destroying the dielectric strength of the surrounding medium or by direct contact or induction of two objects having different potentials. The electrostatic destruction of semiconductor devices by static electricity in the production process is caused by external static electricity being discharged to the device, when the static electricity accumulating device is in contact with the external ground conductor and discharged, and the electric field environment around the device changes suddenly. Occurs when Mechanisms of semiconductor device destruction and deterioration due to static electricity can be roughly divided into two types. One is thermal breakage caused by the melting of Au and Al wiring or the conduction current inside the device, and the thermal breakdown is caused by current increase due to the negative resistance of the device. Electric field destruction. When the static electricity is generated instantaneously, and thus the electrostatic shock is applied to the light emitting diode, the PN junction is shorted due to the instantaneous current increase, which leads to the end of the life of the light emitting diode. Among such light emitting diodes, a diode having an unstable structure having a high energy level, such as an ultraviolet light emitting diode, and a light emitting diode having a double electrode structure are very weak to electrostatic shock, and are particularly damaged by thermal breakdown factors. If heat is not spread and concentrated when an electrostatic discharge pulse is applied, the junction is shorted because the temperature coefficient of the resistance of that portion becomes negative, shunting the current, and eventually thermal runaway occurs.

On the other hand, Zener collapse means that when the reverse voltage is applied to the PN junction by a reverse value of a certain value or more, the current rapidly increases and the operating resistance becomes almost 0. The voltage at this time is called a breakdown voltage. Zener diodes are constant voltage devices used to maintain a constant voltage and are diodes using a Zener breakdown mechanism.

Conventionally, in order to prevent electrostatic shock of a light emitting diode module, a light emitting diode module is mounted on a circuit board equipped with a zener diode and commercialized. However, this method is not suitable for constructing a plurality of LED module arrays, and cannot prevent the occurrence of electrostatic shock in the LED module.

A method of protecting a light emitting diode from an instantaneous reverse voltage by mounting a zener diode inside the light emitting diode module to sequentially connect the light emitting diode electrode and the zener diode electrode is disclosed in US Pat. No. 5,914,501. Such a technique has a problem in that the light emitting diode cannot be driven when the zener diode is short-circuited, thereby lowering the production yield and efficiency. In addition, in order to connect the wires sequentially, a certain space is required between the two diodes, which causes the light emitting diodes to be biased to one side. Therefore, since the directivity angle and uniformity of light greatly fall, it cannot be used especially for the product which requires uniform light of a dome shape.

DISCLOSURE OF THE INVENTION An object of the present invention is to provide an ultraviolet light emitting diode module and a light emitting diode packaging that are resistant to electrostatic shock in which a zener diode is mounted at the same time as an ultraviolet light emitting diode that is weak against electrostatic shock and an overvoltage suppressor in order to solve the conventional problems as described above. In other words, a zener diode is mounted on a light emitting diode module having a double-electrode structure, thereby providing a light emitting diode module and a light emitting diode packaging capable of forming uniformly moving light with symmetry and a constant direction angle while maintaining optical characteristics of a conventional light emitting diode. It is for that purpose.

The light emitting diode module of the present invention for achieving the above object is a light emitting diode provided with an N electrode and a P electrode, an overvoltage suppression device provided with an N electrode and a P electrode, the P electrode of the light emitting diode and the N of the overvoltage suppression device A positive lead terminal to which an electrode is electrically connected, and a negative lead terminal to which an N electrode of the light emitting diode and a P electrode of the overvoltage suppression element are electrically connected, and comprising a positive lead terminal and a negative lead terminal. The light emitting diode and the overvoltage suppression element may be mounted at any position of the tip portion.

In addition, the light emitting diode and the overvoltage suppression element may be mounted at the front end of the same lead terminal, or may be mounted at the front end of different lead terminals. The light emitting diode module may include an ultraviolet light emitting diode having a dual electrode structure, and may be packaged into any one of a top type, a top side view type, and a lamp type. In particular, the light emitting diode may be disposed at the center of the light emitting diode packaging.

Hereinafter, a diode resistant to static electricity according to the present invention will be described in detail with reference to the accompanying drawings.

1 is a circuit diagram for preventing static electricity of a light emitting diode, and a driving principle of the light emitting diode module resistant to static electricity according to the present invention will be described next.

The light emitting diode 100 is connected so that a current flows in the forward direction, that is, a current flows from the anode (anode) side to the cathode (cathode) side, and the zener diode 200 which is one of the overvoltage suppression elements flows in the reverse direction. The light emitting diodes 100 are connected in parallel with each other. As shown in FIG. 1, a forward current flows through the ultraviolet light emitting diode 100 having a dual electrode weak against static electricity, and a reverse current flows through the zener diode 200. If a high overcurrent is applied to the circuit due to a sudden overvoltage, the zener diode 200 is driven, and the voltage is hardly changed even though the current increases, thereby protecting the circuit by maintaining a constant voltage across A and B. Shielding the electrostatic shock applied to the 100 to protect the light emitting diode (100).

The structure of the ultraviolet light emitting diode of the double electrode structure used in the present invention is shown in FIG. In general, the light emitting diode 100 includes a PN layer formed of a semiconductor material such as GaN, ZnSe, ZnS, SiC, or GaP on the sapphire substrate 110. The P electrode 150 is provided in the P-type semiconductor layer 140, and the N electrode 160 is provided in the N-type semiconductor layer 120 so that the P-type semiconductor layer 140 may be electrically connected to each other by a wire.

Mounting positions of the light emitting diode and the zener diode in the light emitting diode module according to the present invention are shown in FIGS. 3 to 4b. 3 is a plan view from above of the light emitting diode module, and FIGS. 4a and 4b are detailed side views of the light emitting diode module of the present invention.

As shown in the drawings, a light emitting diode module according to the present invention has a zener diode 200 mounted on a conventional ultraviolet light emitting diode module having a double electrode structure, and has a positive lead terminal 400 and a negative lead terminal 300. The wires 310, 410, and 420 are electrically connected to each other and manufactured.

The present invention will be described in more detail with reference to FIGS. 3 and 4A as follows. 3 and 4A, the light emitting diode module resistant to static electricity may be provided with a negative lead terminal 300 spaced apart from the bonding portion 301 of the negative lead terminal 300 on which the ultraviolet light emitting diode 100 is mounted. The zener diode 200 is mounted on the shoulder 302, and the zener diode 200 having an NP layer is used to electrically contact the P electrode 250 to the negative lead terminal 300. The bonding portion 301 on which the light emitting diode 100 is mounted has a concave shape of a truncated cone having a flat bottom surface formed at the tip of the lead terminal 300, and the light emitting diode 100 is mounted in the concave bonding portion 301. . In this case, the concave shape of the truncated cone reflects the light generated from the light emitting diodes 100 to enable effective illumination. The light emitting diode 100 according to the present invention may use a light emitting wavelength of 200nm to 600nm. In addition, the shoulder 302 of the negative lead terminal 300 is designed to be sized to mount the zener diode 200. The P electrode 150 is electrically connected to the distal end portion 402 of the positive lead terminal 400 by a wire 410 so that a forward current flows in the ultraviolet light emitting diode 100, and the N electrode 160 is The wire 310 is electrically connected to the negative lead terminal 300. The zener diode 200 is mounted such that the P layer is electrically contacted with the negative lead terminal 300 so that current flows in the reverse direction, and is electrically connected to the tip 402 of the positive lead terminal 400 by a wire 420. Connected.

A modification of the electrostatic light emitting diode module is shown in FIG. 4B. As shown in FIG. 4B, a Zener diode 700 having a PN layer is mounted on the tip 402 of the positive lead terminal 400 in which the light emitting diode 100 is not mounted so that the N electrode 760 is in electrical contact. do. The P electrode 750 is electrically connected to the shoulder 302 of the negative lead terminal 300 with a wire 420. The rest of the configuration is the same as in Fig. 4A described above.

Such a light emitting diode module may be packaged into a lamp type and a side view type. FIG. 5 is a side view illustrating an internal configuration of a light emitting diode package in which a light emitting diode module of the present invention is packaged in a lamp type, and FIG. 6 is a top view of a light emitting diode packaging packaged in a side view type to show a light emitting diode and a zener diode. Partial cutaway top view showing the arrangement of a.

In particular, in FIG. 5, the ultraviolet light emitting diode 100 is mounted to the bonding part 301 so that the ultraviolet light emitting diode 100 is disposed at the center in accordance with the center line X-X of the light emitting diode packaging 600. This allows the light emitting diode packaging to be symmetrical to form uniform light. Ultraviolet light emitting diodes are also arranged in the center of the side view type light emitting diode packaging. The packaging method of the light emitting diode is well known to those skilled in the art, and the description thereof is omitted here.

Although the technical features of the present invention have been described in detail through specific embodiments, the present invention is not limited thereto, and modifications and improvements may be made by those skilled in the art within the technical spirit of the present invention.

The electrostatic light-emitting diode module and its packaging of the present invention mount a zener diode to the shoulder, which is the tip of the terminal lead, to protect the light-emitting diode from electrostatic shock without disturbing the light path of the light-emitting diode. In this case, since only the width of the shoulder of the terminal lead is slightly widened in the conventional LED packaging, the existing equipment can be used as it is and thus the present invention can be easily implemented. In addition, since the zener diode is mounted inside the packaging and the zener diode is not mounted on the external circuit board, an additional manufacturing step can be omitted. As a result, productivity can be increased, and electrostatic shock shielding efficiency is also very high.

On the other hand, since the light emitting diode is located at the center of the light emitting diode packaging, it is possible to form uniform light having symmetry. In addition, the light emitting diode and the zener diode are arranged in a parallel structure in the LED packaging so that the zener diode layer is shorted or the wire is shorted, and thus the function of the light emitting diode is not paralyzed. Conventional packaging of the light emitting diode is short-circuited to the electrostatic shock of 300V or less, but the electrostatic-resistant light emitting diode module of the present invention is not affected by the electrostatic shock of 5kV or more.

1 is a circuit diagram showing the principle of the electrostatic resistant light emitting diode module according to the present invention.

2 is a schematic cross-sectional view of an ultraviolet light emitting diode having a double electrode structure.

3 is a schematic plan view from above of a light emitting diode module according to the invention;

4A is a detailed side view of the light emitting diode module of FIG. 3;

Figure 4b is a side view of a modification of the light emitting diode module according to the present invention.

5 is a schematic side view of a light emitting diode packaging in which a light emitting diode module is packaged in a lamp type according to the present invention;

Figure 6 is a plan view of a light emitting diode packaging packaged in a side view type light emitting diode module according to the present invention.

<Explanation of symbols for the main parts of the drawings>

100: light emitting diode 110: sapphire substrate

120: N-type semiconductor layer 130: active layer

140: P-type semiconductor layer 150, 250, 750: P electrode

160, 260, 760: N electrode 200: Zener diode (NP type)

300: negative lead terminal 301: bonding unit

302: shoulder 310, 410, 420: wire

400: Positive lead terminal 402: Tip portion

600: light emitting diode packaging 700: zener diode (PN type)

Claims (6)

A light emitting diode provided with an N electrode and a P electrode, An overvoltage suppression element provided with an N electrode and a P electrode, A positive lead terminal to which the P electrode of the light emitting diode and the N electrode of the overvoltage suppression element are electrically connected; A negative lead terminal to which the N electrode of the light emitting diode and the P electrode of the overvoltage suppression element are electrically connected; And the light emitting diode and the overvoltage suppression element are mounted at arbitrary positions of the tip portions of the positive lead terminal and the negative lead terminal. The light emitting diode module according to claim 1, wherein the light emitting diode and the overvoltage suppression element are mounted at the front end portion of the same lead terminal. The light emitting diode module according to claim 1, wherein the light emitting diode and the overvoltage suppression element are mounted at front ends of different lead terminals. The light emitting diode module according to any one of claims 1 to 3, wherein the light emitting diode module comprises an ultraviolet light emitting diode having a double electrode structure. The LED package according to any one of claims 1 to 3, wherein the LED module is packaged into any one of a top type, a top side view type, and a lamp type. 6. The light emitting diode packaging of claim 5, wherein the light emitting diode is disposed at a central portion of the light emitting diode packaging.