KR20050015715A - Heater block and plasma process equipment including the same - Google Patents
Heater block and plasma process equipment including the sameInfo
- Publication number
- KR20050015715A KR20050015715A KR1020030054652A KR20030054652A KR20050015715A KR 20050015715 A KR20050015715 A KR 20050015715A KR 1020030054652 A KR1020030054652 A KR 1020030054652A KR 20030054652 A KR20030054652 A KR 20030054652A KR 20050015715 A KR20050015715 A KR 20050015715A
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- Prior art keywords
- heater block
- grounding
- clamp
- ground
- process chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
Abstract
Description
본 발명은 플라즈마 처리장치에 관한 것으로, 보다 상세하게는 개선된 접지 구조를 갖는 히터 블록 및 상기 히터 블록을 갖는 플라즈마 처리장치에 관한 것이다.The present invention relates to a plasma processing apparatus, and more particularly, to a heater block having an improved ground structure and a plasma processing apparatus having the heater block.
반도체 소자의 제조 공정에 있어서 웨이퍼의 표면에 박막을 증착하기 위해 화학 기상 증착(Chemical Vapor Deposition; 이하 'CVD'라 한다)장치가 사용되고 있다. 상기 CVD장치를 이용한 공정은 적층될 물질 원자를 포함한 가스 상태의 화학 물질을 공정 챔버로 보내고, 이 공정 챔버에서 화학 물질이 다른 가스와 반응하여 원하는 물질을 만들어 이 물질을 웨이퍼에 증착한다.In the semiconductor device manufacturing process, a chemical vapor deposition (CVD) apparatus is used to deposit a thin film on the surface of a wafer. The process using the CVD apparatus sends a gaseous chemical including a material atom to be deposited to a process chamber, where the chemical reacts with another gas to produce a desired material and deposit the material on a wafer.
상기한 CVD장치 중에서 근래에는 플라즈마 CVD(Plasma Enhanced CVD: 이하, PECVD'라 한다)장치가 많이 사용되고 있는데, 상기한 PECVD는 통상의 CVD 장치와는 달리 플라즈마를 이용하여 반응 가스를 활성화시킨 상태에서 공정을 진행함으로써 통상의 CVD 장치보다 더 낮은 공정 온도에서 공정을 진행할 수 있다는 등의 여러 장점이 있으며, 주로, 반도체 소자의 제조 공정에서 금속 배선 등의 하부층을 보호 및 절연시키기 위하여 질화막을 형성할 때 및 반도체 소자의 콘택 저항을 감소시키기 위해 티타늄 실리사이드막을 형성할 때 등에 사용된다.Plasma Enhanced CVD (hereinafter referred to as PECVD ') is widely used among the above CVD apparatuses. Unlike the conventional CVD apparatuses, the above-described PECVD process is performed in a state in which a reaction gas is activated using plasma. There are several advantages, such as the process can be performed at a lower process temperature than the conventional CVD apparatus, and mainly, when forming a nitride film to protect and insulate a lower layer such as metal wiring in the manufacturing process of a semiconductor device and It is used for forming a titanium silicide film in order to reduce the contact resistance of a semiconductor device.
이러한 PECVD 장치는 일반적으로 웨이퍼가 장착되는 히터 블록 및 가스 배기구를 포함하는 공정 챔버와, 공정 챔버 내의 상부에 설치되어 가스 주입관에 연결되는 샤워 헤드와, 상기 샤워 헤드에 접속되는 고주파 발생기를 포함한다.Such a PECVD apparatus generally includes a process chamber including a heater block on which a wafer is mounted and a gas exhaust port, a shower head installed at an upper portion of the process chamber and connected to a gas injection tube, and a high frequency generator connected to the shower head. .
그리고, 상기한 구성의 PECVD 장치를 사용하여 플라즈마 처리 공정을 진행할 때, 상기 고주파 발생기에서는 일반적으로 플라즈마 생성에 필요한 주파수대의 고주파와, 플라즈마 생성에 기여하지 못하는 미량의 저주파가 발생된다.When the plasma processing process is performed using the PECVD apparatus having the above-described configuration, the high frequency generator generally generates high frequencies in the frequency bands necessary for plasma generation and a small amount of low frequency that does not contribute to plasma generation.
따라서, 상기한 고주파 및 저주파를 접지시키기 위해 상기한 히터 블록에는 접지 수단이 제공된다. 이를 설명하면, 히터 블록에 접지 클램프 및 접지 스트랩을 설치하기 위해 상기 히터 블록의 측면에는 홀이 가공되어 있고, 이 홀에는 내부에 나사산이 형성된 헬리코일이 삽입 설치되며, 상기 헬리코일에는 상기 접지 스트랩과 접지 클램프를 사이에 두고 스크류가 체결된다. 그리고, 상기 접지 스트랩의 단부에는 피드 스루(feed thru)가 설치된다. 물론, 상기한 구성의 접지 수단은 고주파 접지용 및 저주파 접지용으로 나누어 설치될 수 있다.Accordingly, the heater block is provided with a grounding means to ground the high and low frequencies. To explain this, a hole is formed in a side of the heater block to install a ground clamp and a ground strap in the heater block, and a threaded helicoil is inserted into the hole, and the grounding strap is installed in the helicoil. The screw is tightened with the ground clamp in between. In addition, a feed thru is installed at an end of the ground strap. Of course, the grounding means of the above-described configuration may be divided into high frequency grounding and low frequency grounding.
이에 따라, 상기 고주파 발생기에서 발생된 고주파는 샤워 헤드, 웨이퍼, 히터 블록, 접지 클램프와 접지 스트랩 및 피드 스루를 통해 챔버 외부로 접지되고, 저주파는 샤워 헤드, 히터 블록, 접지 클램프와 접지 스트랩 및 피드 스루를 통해 챔버 외부로 접지된다.Accordingly, the high frequency generated by the high frequency generator is grounded out of the chamber through the shower head, the wafer, the heater block, the ground clamp and the ground strap and the feed through, and the low frequency is the shower head, the heater block, the ground clamp and the ground strap and the feed. Through through is grounded out of the chamber.
그런데, 상기한 구성의 접지 구조에 의하면 다음과 같은 문제점이 있다.However, the grounding structure of the above-described configuration has the following problems.
즉, 상기 접지 스트랩 및 접지 클램프를 체결하는 스크류가 고온, 고압에 의해 부식되거나 변형되면, 상기 접지 수단의 교환을 위해 스크류를 분리할 때 상기한 헬리코일도 히터 블록으로부터 빠져나오게 되고, 이로 인해 상기 히터 블록에 손상이 가해져 히터 블록 전체를 교환해야 한다.That is, when the screw fastening the ground strap and the ground clamp is corroded or deformed by high temperature and high pressure, when the screw is removed for the replacement of the grounding means, the helicoil also comes out of the heater block. The heater block is damaged and the entire heater block must be replaced.
또한, 상기한 스크류의 부식이 접지 클램프와 히터 블록의 접촉면까지 진행되는 경우에는 접지 작용에 문제가 발생하여 증착 공정 및 장비에 심각한 손상이 유발된다.In addition, when the corrosion of the screw proceeds to the contact surface of the ground clamp and the heater block, a problem occurs in the grounding operation and serious damage to the deposition process and equipment is caused.
본 발명은 상기한 문제점을 해결하기 위한 것으로, 그 목적은 접지 구조를 개선한 히터 블록을 제공함에 있다.The present invention has been made to solve the above problems, and an object thereof is to provide a heater block having an improved ground structure.
본 발명의 다른 목적은 상기한 히터 블록을 갖는 플라즈마 처리장치를 제공하는 것이다.Another object of the present invention is to provide a plasma processing apparatus having the above-described heater block.
상기한 본 발명의 첫 번째 목적은, The first object of the present invention described above,
공정 챔버의 내부에 설치되어 웨이퍼를 가열하며, 무선주파수(RF) 전원을 접지시키는 접지 수단을 포함하는 히터 블록에 있어서,A heater block installed inside the process chamber and heating the wafer, the heater block comprising a grounding means for grounding the radio frequency (RF) power source,
상기 접지 수단은, 히터 블록에 용접 고정되는 접지 클램프와, 상기 접지 클램프에 조립되는 접지 스트랩과, 상기 접지 스트랩을 상기 접지 클램프에 조립하는 체결 부재를 포함한다.The grounding means includes a ground clamp welded to the heater block, a ground strap assembled to the ground clamp, and a fastening member for assembling the ground strap to the ground clamp.
본 발명의 바람직한 실시예에 의하면, 상기한 체결 부재는 스크류 및 너트로 이루어지며, 상기한 접지 스트랩의 단부에는 피드 스루가 더욱 설치된다.According to a preferred embodiment of the present invention, the fastening member is composed of a screw and a nut, and the feed through is further provided at the end of the ground strap.
이러한 구성의 히터 블록에 의하면, 히터 블록에 스크류를 체결하지 않아도 되므로, 상기 접지 스트랩의 제거시에 히터 블록에 가해지는 손상을 최소화 할 수 있고, 히터 블록의 내부에 헬리코일이 없으므로, 스크류가 부식 또는 변형된 경우에도 히터 블록은 계속적인 사용이 가능한 효과가 있다.According to the heater block of such a structure, since it is not necessary to fasten a screw to a heater block, the damage to a heater block at the time of removal of the said ground strap can be minimized, and since there is no helical coil inside a heater block, a screw is corroded. Alternatively, even when the heater block is modified, there is an effect that can be used continuously.
그리고, 상기한 구성의 히터 블록을 갖는 플라즈마 처리장치는, 공정 챔버와; 상기한 공정 챔버의 내측에 설치되는 전술한 히터 블록과; 상기 공정 챔버의 상부에 설치되어 반응 가스를 공급하는 샤워 헤드와; 상기 샤워 헤드에 연결되는 고주파 발생기;를 포함한다.And a plasma processing apparatus which has the heater block of the said structure is a process chamber; The above-described heater block installed inside the process chamber; A shower head installed at an upper portion of the process chamber to supply a reaction gas; It includes; a high frequency generator connected to the shower head.
이하, 첨부도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 1은 본 발명의 실시예에 따른 플라즈마 처리장치의 개략적인 구성도를 도시한 것이고, 도 2는 본 발명의 실시예에 따른 히터 블록의 개략적인 구성도를 도시한 것이다.1 illustrates a schematic configuration diagram of a plasma processing apparatus according to an embodiment of the present invention, and FIG. 2 illustrates a schematic configuration diagram of a heater block according to an embodiment of the present invention.
도면에 도시한 바와 같이, 본 실시예의 플라즈마 처리장치는 가스 배기구(12)를 구비하는 공정 챔버(10)와, 상기 공정 챔버(10)의 내부 하측에 설치되는 히터 블록(20)과, 상기 히터 블록(20)의 상측에 설치되는 샤워 헤드(30)와, 상기 샤워 헤드(30)에 반응 가스를 공급하는 가스 공급부(40)와, 상기 샤워 헤드(30)에 고주파 전원을 인가하는 고주파 발생기(50)를 포함한다.As shown in the figure, the plasma processing apparatus of the present embodiment includes a process chamber 10 including a gas exhaust port 12, a heater block 20 provided below the process chamber 10, and the heater. A shower head 30 installed above the block 20, a gas supply unit 40 supplying a reaction gas to the shower head 30, and a high frequency generator applying high frequency power to the shower head 30 ( 50).
상기 히터 블록(20)은 고주파 발생기(50)에서 인가된 고주파 및/또는 미량의 저주파를 접지시키기 위한 접지 수단(22)을 구비하며, 본 실시예의 접지 수단(22)은 도 2에 잘 도시된 바와 같이, 히터 블록(20)에 용접 고정되는 접지 클램프(22a)와, 접지 클램프(22a)에 조립되는 접지 스트랩(22b)과, 접지 스트랩(22b)을 접지 클램프(22a)에 조립하는 스크류(22c) 및 너트(22d)와, 접지 스트랩(22b)의 단부에 설치되는 피드 스루(22e)를 포함한다.The heater block 20 has a grounding means 22 for grounding a high frequency and / or a small amount of low frequency applied by the high frequency generator 50, and the grounding means 22 of this embodiment is shown in FIG. As described above, the ground clamp 22a welded and fixed to the heater block 20, the ground strap 22b assembled to the ground clamp 22a, and the screw for assembling the ground strap 22b to the ground clamp 22a ( 22c) and nut 22d, and feed-through 22e provided at the end of the ground strap 22b.
상기한 접지 수단(22)은 적어도 3개 이상이 등간격으로 설치될 수 있으며, 이 중에서 어느 한 쪽의 접지 수단, 예를 들어 도 1의 좌측에 도시한 접지 수단은 저주파 접지용으로 사용할 수 있다. 이 경우, 도 1의 우측에 도시한 접지 수단과, 이 접지 수단의 후방에 설치되어 상기 도 1에는 도시되지 않은 또다른 접지 수단은 고주파 접지용으로 사용할 수 있다.At least three grounding means 22 may be installed at equal intervals, and any one of the grounding means, for example, the grounding means shown on the left side of FIG. 1 may be used for low frequency grounding. . In this case, the grounding means shown on the right side of FIG. 1 and another grounding means provided behind the grounding means and not shown in FIG. 1 can be used for high frequency grounding.
상기한 접지 클램프(22a)는 알루미늄 재질로 형성하는 것이 바람직하며, 위에서 설명한 바와 같이 접지 스트랩(22b)을 분해할 때에도 히터 블록(20)에 고정된 상태로 유지되도록 용접 고정된다. 물론, 도시하지는 않았지만, 상기한 접지 클램프(22a)는 스크류에 의해 히터 블록에 고정할 수도 있다.The ground clamp 22a is preferably formed of aluminum, and as described above, the ground clamp 22a is welded and fixed to be maintained in the heater block 20 even when the ground strap 22b is disassembled. Of course, although not shown, the ground clamp 22a may be fixed to the heater block by a screw.
따라서, 상기한 구성의 접지 수단(22)에 의하면, 상기 고주파 발생기(50)에서 발생된 고주파는 샤워 헤드(30), 웨이퍼(W), 히터 블록(20), 접지 클램프(22a)와 접지 스트랩(22b) 및 피드 스루(22e)를 통해 챔버(10) 외부로 접지되고, 저주파는 샤워 헤드(30), 히터 블록(20), 접지 클램프(22a)와 접지 스트랩(22b) 및 피드 스루(22e)를 통해 챔버(10) 외부로 접지된다.Therefore, according to the grounding means 22 of the above-described configuration, the high frequency generated by the high frequency generator 50 is the shower head 30, the wafer W, the heater block 20, the ground clamp 22a and the ground strap. Ground 22 to the outside of the chamber 10 via a feedthrough 22e and a feedthrough 22e, the low frequency being shower head 30, heater block 20, ground clamp 22a and ground strap 22b and feedthrough 22e. Ground through the chamber (10).
상술한 바와 같이, 본 발명의 히터 블록은 접지 수단의 주기적인 교환을 위해 상기 스크류를 분해하는 경우, 상기 스크류가 부식 또는 변형되더라도 히터 블록에 직접적인 손상이 가해지지 않으므로, 히터 블록 전체를 교환할 필요가 없다. 또한, 부식으로 인한 접지 작용의 저하가 발생되지 않으므로, 증착 공정 및 장비에 심각한 손상이 유발되는 것을 방지할 수 있는 효과가 있다.As described above, the heater block of the present invention does not directly damage the heater block even if the screw is corroded or deformed when the screw is disassembled for periodic replacement of the grounding means, and thus the entire heater block needs to be replaced. There is no. In addition, since the degradation of the grounding action due to corrosion does not occur, there is an effect that can prevent serious damage to the deposition process and equipment.
도 1은 본 발명의 실시예에 따른 플라즈마 처리장치의 개략 구성도이고,1 is a schematic configuration diagram of a plasma processing apparatus according to an embodiment of the present invention,
도 2는 본 발명의 실시예에 따른 히터 블록의 주요부 구성도이다.2 is a block diagram illustrating main parts of a heater block according to an exemplary embodiment of the present invention.
Claims (8)
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| KR10-2003-0054652A KR100529631B1 (en) | 2003-08-07 | 2003-08-07 | Heater block and plasma process equipment including the same |
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| KR10-2003-0054652A KR100529631B1 (en) | 2003-08-07 | 2003-08-07 | Heater block and plasma process equipment including the same |
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| KR20050015715A true KR20050015715A (en) | 2005-02-21 |
| KR100529631B1 KR100529631B1 (en) | 2005-11-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101721921B1 (en) * | 2016-02-24 | 2017-04-03 | 강릉원주대학교산학협력단 | Ground strap apparatus heater for substrate processing apparatus |
| KR20180130642A (en) * | 2017-05-29 | 2018-12-10 | 삼성디스플레이 주식회사 | Chemical vapor deposition device |
| CN112838040A (en) * | 2019-11-25 | 2021-05-25 | 中微半导体设备(上海)股份有限公司 | Wafer clamping device and plasma processing equipment |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100929153B1 (en) * | 2007-12-27 | 2009-12-01 | 세메스 주식회사 | Power transmission member and manufacturing method thereof |
| KR101081744B1 (en) * | 2009-08-17 | 2011-11-09 | 주성엔지니어링(주) | Apparatus for treating substrate |
-
2003
- 2003-08-07 KR KR10-2003-0054652A patent/KR100529631B1/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101721921B1 (en) * | 2016-02-24 | 2017-04-03 | 강릉원주대학교산학협력단 | Ground strap apparatus heater for substrate processing apparatus |
| KR20180130642A (en) * | 2017-05-29 | 2018-12-10 | 삼성디스플레이 주식회사 | Chemical vapor deposition device |
| US11214870B2 (en) | 2017-05-29 | 2022-01-04 | Samsung Display Co., Ltd. | Chemical vapor deposition system including ground strap bar |
| CN112838040A (en) * | 2019-11-25 | 2021-05-25 | 中微半导体设备(上海)股份有限公司 | Wafer clamping device and plasma processing equipment |
| CN112838040B (en) * | 2019-11-25 | 2023-10-20 | 中微半导体设备(上海)股份有限公司 | Wafer clamping device and plasma processing equipment |
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| KR100529631B1 (en) | 2005-11-17 |
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