JP4775641B2 - Gas introduction device - Google Patents

Description

  The present invention relates to a gas introduction apparatus that introduces a process gas into an airtight chamber, and more particularly to an airtightness of a plasma processing apparatus that generates a surface wave excited plasma by exciting a process gas in the airtight chamber by a surface wave to process an object to be processed. It relates to the introduction of process gas into the room.

  The surface wave plasma source is applied to a plasma processing apparatus and high density plasma application apparatus using surface wave plasma (SWP). High density plasma application equipment includes ashing equipment, dry etching equipment, plasma CVD equipment, ion beam sputtering equipment, ion beam etching equipment, ion beam assist equipment, SWP sputtering equipment, other remote plasma sources, plasma sterilization equipment, etc. .

  For example, in a semiconductor manufacturing process, plasma technology is often used for film formation, etching, ashing, and the like. Plasma technology is also used for manufacturing solar cells, liquid crystal displays, plasma displays, and the like. As panels increase in size and screen, it is necessary to uniformly generate high-density plasma with a large area. By making the plasma density uniform, the entire surface of the object to be processed can be uniformly processed.

  An apparatus using surface wave plasma (SWP) is known as a plasma processing apparatus that can generate a large-area high-density plasma (see, for example, Patent Document 1). In this apparatus, a microwave propagating in a waveguide is introduced from a slot antenna into a plasma generation chamber through a dielectric window, and a process gas in the plasma generation chamber is plasma-excited by a surface wave generated on the dielectric window surface. The surface wave quickly propagates on the surface of the dielectric window, and a plasma region corresponding to the surface area of the dielectric window is obtained.

  In a plasma processing apparatus using surface wave excitation plasma, it is known that gas dissociation and reaction occur extremely rapidly by the action of high density plasma generated by surface wave plasma. Therefore, the uniform supply and control of the gas to the surface of the object to be processed greatly affects the processing uniformity of the surface to be processed.

  As a method for uniformly supplying the process gas into the hermetic chamber, a configuration using a rod-like gas ejection portion having a plurality of small holes on the side surface is conceivable. The inventor of the present invention has studied this configuration, and as a result, the gas ejection amount is non-uniform on the supply side and near the end of the gas ejection unit, and the processing state of the surface to be processed is non-uniform in the surface. Obtained. In addition, in this configuration, the hole diameter on the gas supply side was reduced, and the hole diameter was increased stepwise toward the end side, but improvement was not achieved, but good results were not obtained.

  Therefore, the applicant of the present invention has proposed a configuration in which gas is dispersed and ejected by providing two or more dispersion plates inside the gas ejection portion.

  7 and 8 are diagrams for explaining the configuration of the proposed gas ejection part. The gas ejection part 102 includes a main body 103, two diffusion plates 104 and 106, a diffusion plate 104, a spacer 105 sandwiched between the diffusion plates 104 and 106, and an ejection plate 107. The gas introduced into the first space 112 in the main body 103 first diffuses into the second space 113 in the spacer 105 through the gas ejection holes 108 formed in the diffusion plate 104. The gas diffused into the second space 113 passes through the gas ejection holes 109 formed in the diffusion plate 106 and then ejects to the outside through the gas ejection holes 110 formed in the ejection plate 107.

In this configuration, a plurality of mounting bolts 111 are fastened so that no gas leaks from gaps between the constituent members including the dispersion plate.
JP 2000-348898 A

  In the configuration of the gas ejection portion using the above-described proposed diffusion plate, a plurality of diffusion plates are fixed with fastening members, so that thin plate parts are processed to form the diffusion plate, and the diffusion holes formed in these Since it is necessary to fasten each member with a fastening member so as not to cause gas leakage, there is a problem in terms of workability in processing work and assembly work in addition to the problem of component costs.

  SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to solve the above-described conventional problems and to uniformly supply gas with a simple configuration.

  The gas introduction apparatus of the present invention is a gas introduction apparatus that generates a surface wave excitation plasma by exciting a process gas in an airtight chamber by a surface wave and introduces the process gas into the airtight chamber in a plasma processing apparatus for processing an object to be processed. There are at least two thin-walled tubes coaxially arranged in the axial direction with a plurality of gas ejection holes to constitute a multi-structure gas ejection section.

  In this gas ejection part, process gas is introduced into the innermost thin tube, and the process gas is ejected from the inner shell side thin tube to the outer shell side thin tube in order through the gas ejection holes of each thin tube. Introduce into the airtight chamber from the thin-walled tube of the outermost shell. The gas ejection part can have a simple configuration in which a plurality of thin tubes having different tube diameters are arranged coaxially.

  At least one end portion of the plurality of thin-walled tubes can be fixed and sealed to the lid portion or the like by caulking or welding.

  The thin-walled tube of the outermost shell provided in the gas ejection part has a configuration in which a plurality of gas ejection holes are arranged in a line along the axial direction, and a plurality of gas ejection holes are arranged in a line along the axial direction. Each array can be arranged at an arbitrary angle in the circumferential direction.

  Further, the plurality of thin-walled tubes arranged on the same axis can be configured to include a deposition tube disposed on the outermost shell and at least one gas ejection tube disposed on the inner shell side of the deposition tube. The anti-adhesion tube is in contact with the outer peripheral surface of the outermost gas ejection tube among the gas ejection tubes on the inner circumferential surface, and can cover the gas ejection tube.

  Here, the deposition preventing tube has a gas ejection hole with a hole diameter in the range of 1.0 mm to 2.0 mm, and the tube thickness can be in the range of 1.5 mm to 3.0 mm.

  In addition, the gas ejection pipes arranged on the inner shell side of the deposition preventing pipe can be arranged so that the positions of the gas ejection holes provided in the gas ejection pipes facing each other are shifted from each other. The diffused gas can be diffused in the space portion between the tubes, and the diffused gas can be further diffused to the outer gas ejection tube.

  With respect to the deposition tube disposed on the outermost shell, the gas ejection tube disposed on the inner shell side of this deposition tube has a ratio s = t / d of the tube thickness t to the hole diameter d of 1.5 to 3.4. And the hole diameter d is 0.3 mm or more.

  The introduction of the gas into the gas introduction device can be performed from one end of the innermost thin-walled tube of the gas outlet or from both ends.

  Moreover, it can be set as the structure provided with the gas manifold which introduces process gas in a some gas ejection part, and a gas manifold and a gas ejection pipe | tube can be joined via a metal gasket.

  According to the present invention, by providing a plurality of gas ejection pipes with a multiple structure, gas leakage can be reduced with a simple structure and a uniform gas supply can be achieved without using a large number of fastening bolts. .

  According to the embodiment of the present invention, the maintenance frequency of the outermost gas ejection pipe can be reduced by covering the outer side of the gas ejection pipe with the deposition prevention pipe.

  According to the embodiment of the present invention, the hole diameter of the internal gas ejection portion covered by the deposition preventing tube is 0.3 mm or more, and the aspect ratio of the tube thickness to the hole diameter is about 1.5 to 3.4. And clogging of holes due to the adhesion of the product can be suppressed.

  According to the embodiment of the present invention, by supplying the gas from both ends of the pipe of the gas ejection part, it is possible to improve the gas supply non-uniformity between the gas supply side and the terminal gas.

  According to the embodiment of the present invention, the loading effect is utilized by setting the diameter of the gas ejection hole of the deposition preventing tube to a range of 1.0 mm to 2.0 mm and the tube thickness of 1.5 mm to 3.0 mm. As a result, the production of products in the gas ejection pipe can be reduced, and clogging of the gas ejection holes can be eliminated.

  According to the embodiment of the present invention, by providing a plurality of gas ejection pipes, it is possible to uniformly treat a large-area workpiece. Further, the arrangement and quantity of the gas ejection parts can be adjusted according to the area of the object to be processed.

  According to the embodiment of the present invention, maintenance of the gas ejection pipe is facilitated by installing a plurality of gas ejection pipes in the manifold.

  According to the embodiment of the present invention, the manifold and the gas ejection pipe are connected using the metal gasket, thereby enabling use at a high temperature.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 shows a configuration example when the gas introducing device 1 of the present invention is provided in a plasma processing apparatus 50. The plasma processing apparatus 50 includes a process chamber 51. A substrate stage 52 that supports an object to be processed such as a substrate is provided in the process chamber 51. The substrate stage 52 is evacuated by an exhaust device (not shown), and a process gas is supplied from a gas source (not shown) by the gas introduction device 1 of the present invention. Is introduced.

  Further, the process chamber 21 is provided with a surface wave plasma source 10 that generates a surface wave by the microwave introduced from the microwave waveguide 11 and generates plasma by exciting the process gas introduced by the surface wave.

  The surface wave plasma source 10 includes a microwave waveguide 2 and a dielectric plate 13, and a plurality of slot antennas 12 for guiding microwaves to the dielectric plate 13 on the bottom surface constituting the magnetic field surface of the microwave waveguide 2. Is formed. The surface wave plasma source 1 introduces a microwave into a process chamber 21 provided in the plasma apparatus 20, and generates a plasma by exciting a process gas with the surface wave formed by the microwave.

  The microwave propagating through the inside of the microwave waveguide 2 passes through the slot antenna 12, enters the dielectric plate 12, propagates as a surface wave on the surface of the dielectric plate 12, and plasma is generated by the energy of the surface wave. Produces.

  The process chamber 51 is provided with a gas ejection portion and a vacuum exhaust port that constitute the gas introduction device 1 of the present invention. A process gas such as O 2, SiH 4, H 2, N 2, SF 6, Cl 2, Ar, and He is introduced from the gas introduction device 1. By exhausting from the vacuum exhaust port while introducing the process gas, the pressure in the process chamber 51 is normally maintained at about 0.1 to 50 Pa. In such a reduced pressure atmosphere, the process gas is excited by surface wave energy, and plasma is generated. At this time, by placing an object to be processed such as a substrate on the substrate stage 52 in the process chamber 51, processes such as film formation, etching, and ashing are performed.

  Microwaves are introduced into the microwave waveguide 2 from a microwave output unit (not shown). The microwave output unit includes a high voltage power source and a microwave oscillator, and oscillates a microwave M having a frequency of 2.45 GHz, for example. The introduced microwave propagates inside the microwave waveguide 2 to form a standing wave. The dimensions of the microwave waveguide 2 are, for example, the width of the magnetic field plane is 109.2 mm, the width of the electric field plane is 54.6 mm, and the length is a dimension necessary to stabilize the standing wave transmission mode of TE10. It can be.

  The dielectric plate 12 is manufactured from a dielectric material such as quartz, alumina, zirconia, Pyrex (registered trademark) glass, Teflon (registered trademark), or the like. Moreover, the container main body of the process chamber 51 can be formed with nonmagnetic metals, such as stainless steel, aluminum, aluminum alloy, for example.

  In FIG. 1, a gas introduction device 1 of the present invention includes a gas ejection unit 2 that supplies process gas from a gas source (not shown) into a process chamber 51. The gas ejection part 2 includes a plurality of gas ejection parts 2a and 2b. The gas ejection part 2 a is a first gas ejection part 2 a that ejects a process gas only in one direction with respect to the process chamber 51, and a second gas gas that ejects the process gas in at least two directions with respect to the process chamber 51. The gas ejection part 2b is provided.

  In FIG. 1, the dimension of L1 can be about 130 mm, and the dimension of L2 can be about 200 mm to 300 nm.

  Hereinafter, the gas ejection part 2a will be described with reference to the sectional view of FIG. 2, and the gas ejection part 2b will be described with reference to the sectional view of FIG. FIG. 4 is a cross-sectional view of the gas ejection parts 2a and 2b.

  First, the structural example of the 1st gas ejection part 2a is demonstrated using FIG. 2 and FIG. 4 (a). In FIG. 2, the first gas ejection part 2 a is configured by coaxially combining a plurality of tubular members, and includes a plurality of ejection pipes (21, 22) and a deposition pipe 23 covering the outer periphery of the ejection pipe. Prepare. In addition, although the example of two ejection pipes is shown here as a plurality of ejection pipes (21, 22), it is not restricted to two but may be three or more.

  The first ejection pipe 21 is arranged on the most axial side, and receives gas supply from a gas source (not shown) through the connection part 31 and the gas introduction part 32. In the outer shell of the first ejection pipe 21, a second ejection pipe 22 is arranged coaxially with the first ejection pipe 21. Further, the outer shell of the second ejection pipe 22 is coaxial with the first ejection pipe 21 and the second ejection pipe 22 and is in contact with the outer peripheral surface of the second ejection pipe 22. 23 is arranged.

  In FIG. 4A, the first ejection pipe 21 has a plurality of gas outlet holes 24 formed in the pipe wall portion arranged in a line along the axial direction. The plurality of gas outlet holes 24 include a first space 27 inside the first jet pipe 21, a pipe wall part outside the first jet pipe 21, and a pipe wall part inside the second jet pipe 22. The two spaces of the second space 28 sandwiched between and communicate with each other. Further, a tube wall portion on the inner side of the protection tube 23 is provided in contact with a tube wall portion on the outer side of the second ejection tube 22, and a gas outlet hole 25 formed on the tube wall of the second ejection tube 22. A gas ejection pipe hole 26 formed on the pipe wall is arranged in alignment with the deposition preventing pipe 23.

  The arrangement position of the gas outlet hole 24 of the first ejection pipe 21 and the arrangement position of the gas outlet hole 25 of the second ejection pipe 22 are arranged at different angles with respect to the circumferential direction of the shaft core. . By shifting the arrangement angle between the gas outlet hole 24 and the gas outlet hole 25, the gas ejected from the gas outlet hole 24 of the first outlet pipe 21 is directly from the pipe of the gas outlet hole 25. After being diffused in the second space 28 without being ejected, it can be ejected to the outside (for example, a process chamber) through the gas outlet hole 25 and the gas outlet pipe hole 26.

  In FIG. 4A, the arrangement positions of the gas outlet hole 24 of the first ejection pipe 21 and the gas outlet hole 25 of the second ejection pipe 22 are set to an angular position of 180 ° with respect to the axis. However, if the gas introduced from the gas outlet hole 24 reaches the gas outlet hole 25 after being diffused to such an extent that it is considered that sufficient uniformity has been obtained in the first space 27, the other angular positions are used. May be.

  Here, the hole diameter of the ejection pipe (21, 22) is, for example, 0.3 mm or more, and the ratio s between the pipe thickness t and the hole diameter d of the ejection pipe (21, 22) is (= t / d) is 1. About 5 to 3.4 is appropriate. The hole diameter of the gas ejection hole 26 of the deposition preventing tube 23 is suitably in the range of 1.0 mm to 2.0 mm, and the tube thickness is suitably 1.5 mm to 3.0 mm.

  In addition, the deposition tube 23 covering the outer periphery of the ejection pipe (here, the second ejection pipe 22) disposed in the outermost shell is in direct contact with the product generated by the plasma in the process chamber 51, The product is prevented from adhering to the spray pipes (21, 22) covering the inside. This is because the loading effect which suppresses the penetration | invasion of a product inside can be utilized by making the dimension of the hole diameter and tube thickness which the adhesion prevention tube 23 has into the said range.

  With this configuration, the gas diffused with sufficient uniformity can be ejected from the gas ejection pipe hole 26 of the deposition preventing pipe 23, and the ejection pipes (21, 22) disposed inside the multiple structure. The product can be prevented from entering and adhering to.

  In the gas introduction device of the present invention, the product adheres to the deposition tube 23, but the product does not adhere to the ejection pipes (21, 22) arranged inside the multiple structure. By replacing or cleaning only the deposited product, the deposited product can be removed.

  In order to arrange the pipe members of the first ejection pipe 21, the second ejection pipe 22, and the deposition prevention pipe 23 coaxially, the end portions of the respective pipes are connected to the connection portion 31, the gas introduction portion 32, and the lid 33. Support by. One end of the first ejection pipe 21 is attached to the outer peripheral portion of the end of the connecting portion 31, and the other end is attached to the protruding portion provided on the lid 33. In addition, one end of the second ejection pipe 22 is attached to the outer peripheral portion of the end of the connection portion 32, and the other end is attached to the outer peripheral portion of the lid 33. Further, the attachment tube 23 is attached by setting its inner peripheral surface in contact with the outer peripheral surface of the second ejection tube 22 and fixing one end with a screw or the like at the outer end of the connection portion 32.

  Next, the structural example of the 2nd gas ejection part 2b is demonstrated using FIG. 3 and FIG.4 (b). In FIG. 3, the second gas ejection part 2b is also configured by combining a plurality of tubular members coaxially in the same manner as the first gas ejection part 2a described above, and a plurality of ejection pipes (21, 22). And an adhesion preventing tube 23 covering the outer periphery of the ejection tube. In addition, although the example of two ejection pipes is shown here as a plurality of ejection pipes (21, 22), it is not restricted to two but may be three or more.

  The first ejection pipe 21 is arranged on the most axial side, and receives gas supply from a gas source (not shown) through the connection part 31 and the gas introduction part 32. In the outer shell of the first ejection pipe 21, a second ejection pipe 22 is arranged coaxially with the first ejection pipe 21. Further, the outer shell of the second ejection pipe 22 is coaxial with the first ejection pipe 21 and the second ejection pipe 22 and is in contact with the outer peripheral surface of the second ejection pipe 22. 23 is arranged.

  In FIG. 4B, the first ejection pipe 21 has a plurality of gas outlet holes 24 formed in the pipe wall portion arranged in a line along the axial direction. The plurality of gas outlet holes 24 include a first space 27 inside the first jet pipe 21, a pipe wall part outside the first jet pipe 21, and a pipe wall part inside the second jet pipe 22. The two spaces of the second space 28 sandwiched between and communicate with each other.

  The second ejection pipe 22 has a plurality of gas outlet holes 25 formed in the pipe wall portion arranged in two rows at different angular positions along the axial direction. In addition, a tube wall portion on the inner side of the protection tube 23 is provided in contact with the outer wall portion of the second ejection pipe 22, and two rows of gas leads formed on the pipe wall of the second ejection pipe 22. The holes 25 and the two rows of gas ejection pipe holes 26 formed in the tube wall of the deposition preventing pipe 23 are arranged to coincide with each other.

  The arrangement position of the gas outlet hole 24 of the first ejection pipe 21 and the arrangement position of the gas outlet hole 25 of the second ejection pipe 22 are arranged at different angles with respect to the circumferential direction of the shaft core. . By shifting the arrangement angle between the gas outlet hole 24 and the gas outlet hole 25, the gas ejected from the gas outlet hole 24 of the first outlet pipe 21 is directly from the pipe of the gas outlet hole 25. After being diffused in the second space 28 without being ejected, it can be ejected to the outside (for example, a process chamber) through the gas outlet hole 25 and the gas outlet pipe hole 26.

  Further, the gas outlet holes 25 provided in the second ejection pipe 22 are arranged in a plurality of rows (here, two rows), so that the gas ejection directions can be a plurality of directions.

  In FIG. 4B, the arrangement positions of the gas outlet holes 24 of the first ejection pipe 21 and the gas outlet holes 25 of the second ejection pipe 22 are 90 ° relative to the axis. However, if the gas introduced from the gas outlet hole 24 reaches the gas outlet hole 25 after being diffused to such an extent that it is considered that sufficient uniformity has been obtained in the first space 27, the other angular positions are used. May be.

  Also in the second gas ejection part 2b, the numerical examples of the hole diameter of the ejection pipe (21, 22) and the ratio s of the pipe thickness t and the hole diameter d, and the numerical examples of the hole diameter and the pipe thickness of the deposition preventing pipe are described above. It can be the same as that of the example of the 1st gas ejection part 2a.

  Further, since the action of the deposition preventing pipe and the attachment of each pipe member can be the same as those in the example of the first gas ejection part 2a described above, the description thereof is omitted here.

  Next, the configuration in the process chamber of the gas introducing device of the present invention will be described with reference to FIGS. A plurality of the gas introduction apparatuses 1 of the present invention can be arranged in the process chamber 51, whereby it is possible to perform uniform processing on a large-area workpiece, and to match the area of the workpiece. Thus, the arrangement and quantity of the gas ejection part can be freely increased and decreased.

  A manifold 41 is installed in the process chamber 51, and a plurality of gas ejection parts 2 are connected to the manifold 41 via connection parts 42. In FIG. 5, the gas of type 2 is introduced through the manifold 41 and ejected from the ejection unit 2, and the gas of type 1 is also introduced into the process chamber 51 from the surface wave plasma source (SWP source) side. can do.

  FIG. 6A is a configuration example of a gas ejection part connected to the manifold. In this configuration example, a plurality of gas ejection portions 2 a to 2 c are connected to one manifold 41. According to this configuration, the plurality of gas ejection portions 2 a to 2 c are supplied with gas from one side connected to the manifold 41.

  FIG. 6B shows another configuration example of the gas ejection part connected to the manifold. In this configuration example, a plurality of gas ejection portions 2a to 2c are connected to the two manifolds 41a and 41b. According to this configuration, the plurality of gas ejection parts 2 a to 2 c can receive gas supply from both sides connected to the manifold 41.

  In addition, the connection part 42 can use metal gaskets, such as a sedge lock, VCR, and a conflat, By this, use at the time of high temperature is attained.

  When a silicon nitride film is formed by a CVD apparatus using surface wave excitation plasma, nitrogen, argon, and hydrogen are introduced as the gas species 1 and silane and ammonia are introduced as the gas species 2. The introduction ratio of gas of gas type 1 and gas type 2 can be selected as appropriate. Further, the process pressure can be set to a range of 1 Pa to 100 Pa, for example.

  In addition, a mass flow controller is provided at each of the gas ejection portions, and the introduction flow rate can be controlled independently. According to this, the uniformity of gas introduction can be further improved.

  Further, the exhaust of the process chamber can be controlled by conductance control using a turbo molecular pump as a main exhaust pump.

  The surface wave plasma source of the present invention is applied to a plasma processing apparatus and high-density plasma application apparatus using surface wave plasma (SWP). High-density plasma application equipment is applicable to ashing equipment, dry etching equipment, plasma CVD equipment, ion beam sputtering equipment, ion beam etching equipment, ion beam assist equipment, SWP sputtering equipment, other remote plasma sources, plasma sterilization equipment, etc. can do.

It is a figure which shows the structural example which provided the gas introduction apparatus of this invention in the plasma processing apparatus. It is sectional drawing for demonstrating the one aspect | mode of the gas ejection part of this invention. It is sectional drawing for demonstrating the other aspect of the gas ejection part of this invention. It is sectional drawing for demonstrating the gas ejection part of this invention. It is a figure for demonstrating the structure in the process chamber of the gas introduction apparatus of this invention. It is a figure for demonstrating the structure in the process chamber of the gas introduction apparatus of this invention. It is a figure for demonstrating the structure of the gas ejection part proposed conventionally. It is a figure for demonstrating the structure of the gas ejection part proposed conventionally.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Gas introduction apparatus, 2 ... Gas ejection part, 2a ... 1st gas ejection part, 2b ... 2nd gas ejection part, 10 ... Surface plasma source, 11 ... Microwave introduction tube, 12 ... Slot antenna, 13 ... Derivative plate , 14 ... O-ring, 21 ... first jet pipe, 22 ... second jet pipe, 23 ... adhesion pipe, 24 ... gas outlet hole, 25 ... gas outlet hole, 26 ... gas outlet hole, 27 ... first 1 space, 28 ... second space, 31 ... connection part, 32 ... gas introduction part, 33 ... lid, 41, 41a, 41b ... manifold, 42 ... connection part, 50 ... plasma processing apparatus, 51 ... process chamber, 52 ... Substrate stage, 102 ... gas ejection part, 103 ... main body, 104 ... diffusion plate, 105 ... spacer, 106 ... diffusion plate, 107 ... ejection plate, 108 ... gas ejection hole, 109 ... gas ejection hole, 110 ... Gas ejection holes, 111 ... Mounting Bolts, 112 ... first space, 113 ... second space.

Claims (10)

A gas introduction device for exciting a process gas in an airtight chamber by surface waves to generate surface wave excited plasma and introducing the process gas into the airtight chamber in a plasma processing apparatus for processing an object to be processed.
A multi-structure gas ejection portion is configured by coaxially arranging at least two thin-walled tubes having a plurality of gas ejection holes in the axial direction;
A plurality of the gas ejection parts are provided,
The thin-walled tube of the outermost shell of the gas ejection part arranged on the side wall side of the hermetic chamber has a plurality of gas ejection holes arranged in a line along the axial direction,
The thin-walled tube of the outermost shell of the gas ejection part arranged inside the hermetic chamber has a plurality of gas ejection holes arranged along the axial direction, and each arrangement is arranged at an arbitrary angle in the circumferential direction,
The gas ejection part sequentially ejects the process gas introduced into the thin-walled tube of the innermost shell from the thin-walled tube on the inner shell side to the thin-walled tube on the outer shell side through the gas ejection holes of each thin-walled tube. A gas introducing device characterized in that it is introduced into an airtight chamber from a thin-walled tube. A gas introduction device for exciting a process gas in an airtight chamber by surface waves to generate surface wave excited plasma and introducing the process gas into the airtight chamber in a plasma processing apparatus for processing an object to be processed.
A multi-structure gas ejection portion is configured by coaxially arranging at least two thin-walled tubes having a plurality of gas ejection holes in the axial direction;
The plurality of thin-walled tubes arranged on the same axis are:
A deposition tube disposed on the outermost shell, and at least one gas ejection tube disposed on the inner shell side of the deposition tube;
The adhesion preventing pipe is in contact with the outer peripheral surface of the outermost gas ejection pipe among the gas ejection pipes on the inner circumferential surface, and covers the gas ejection pipe,
The gas ejection part sequentially ejects the process gas introduced into the thin-walled tube of the innermost shell from the thin-walled tube on the inner shell side to the thin-walled tube on the outer shell side through the gas ejection holes of each thin-walled tube. A gas introducing device characterized in that it is introduced into an airtight chamber from a thin-walled tube. The protection tube, the diameter of the pores having a gas ejection hole in the range of 1.0 mm to 2.0 mm, wall thickness is characterized by a range of 1.5Mm～3.0Mm, claim 2 The gas introducing device described in 1. The gas ejection pipe arranged on the inner shell side of the protection tube is characterized in that the position of the gas ejection holes provided facing the gas ejection pipe together is a position shifted from each other, according to claim 2 or claim 3 Gas introduction device. The gas ejection pipe arranged on the inner shell side of the deposition preventing pipe has a ratio s = t / d between the pipe thickness t and the hole diameter d of 1.5 to 3.4, and the hole diameter d is 0.3 mm or more. The gas introducing device according to any one of claims 2 to 4 , wherein the gas introducing device is provided. And introducing the process gas from one pipe end of the thin tube innermost shell of the gas ejection portion, the gas introduction apparatus according to any one of claims 1 to 5. And introducing the process gas from the pipe end of both of the thin tube innermost shell of the gas ejection portion, the gas introduction apparatus according to any one of claims 1 to 5. The gas introducing device according to any one of claims 1 to 7 , wherein at least one end of the plurality of thin-walled tubes is sealed by caulking or welding.   The gas introduction device according to claim 1, further comprising a gas manifold for introducing a process gas into the plurality of gas ejection portions. The gas introduction apparatus according to claim 9 , wherein the gas manifold and the gas ejection pipe are joined via a metal gasket.

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