KR20050006627A - Nematic liquid crystal composition - Google Patents
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Abstract
Description
본 발명은 액정 화합물에 관한 것으로서, 더욱 상세하게는 상전이 온도와 응답속도를 더욱 향상시킬 수 있는 네마틱 액정 화합물을 포함하는 네마틱 액정 조성물에 관한 것이다.The present invention relates to a liquid crystal compound, and more particularly to a nematic liquid crystal composition comprising a nematic liquid crystal compound capable of further improving the phase transition temperature and response speed.
최근 들어, 정보 처리 기술의 개발 및 정보 처리를 수행하는 정보 처리 장치의 기술 개발과 함께 방대한 데이터를 단 시간 내 처리하는 것이 가능하게 되었다. 이와 함께, 처리된 데이터를 사용자가 인식할 수 있도록 가시적으로 표현하기 위해 다양한 응용 분야에 걸쳐 디스플레이 장치의 개발이 함께 이루어지고 있다.In recent years, with the development of information processing technology and the development of technology of an information processing apparatus that performs information processing, it has become possible to process massive data in a short time. In addition, development of a display device is being performed in various application fields in order to visually express processed data so that a user can recognize it.
특히, 반도체 기술의 급속한 진보에 의해 각종 전자 장치의 고체화, 저 전압 및 저 전력화와 함께 전자 기기의 소형 및 경량화에 따라 새로운 환경에 적합한 전자 디스플레이 장치, 즉 얇고 가벼우면서도 낮은 구동 전압 및 낮은 소비 전력의 특징을 갖춘 평판 디스플레이(plat panel display) 장치에 대한 요구가 급격히 증대되고 있다.In particular, due to the rapid advancement of semiconductor technology, the electronic display device suitable for the new environment, that is, the thin and light, the low driving voltage and the low power consumption of the electronic device, according to the solidification, low voltage and low power of various electronic devices, and the small size and light weight of the electronic device The demand for feature-rich flat panel display devices is growing rapidly.
그중, 액정 표시 장치는 낮은 소비 전력 및 낮은 구동 전압을 갖추고 있을 뿐 아니라 기존에 많은 연구가 진행되었고 음극선관(cathode ray tube; CRT)에 가까운 화상 표시가 가능하기 때문에 그 요구가 급증하고 있으며 다양한 전자 장치에 광범위하게 사용되고 있다.Among them, the liquid crystal display device has not only low power consumption and low driving voltage, but also a lot of research has been conducted in the past and the image display close to the cathode ray tube (CRT) is rapidly increasing its demand and various electronics. Widely used in devices.
현재, 상기 액정 표시 장치는 노트북(note book), 모니터 및 가정용 TV 뿐만 아니라, 각종 중소형의 디스플레이 장치로 영역을 확대하고 있다. 특히 모니터 및 새로운 LCD의 큰 시장으로 주목받는 LCD-TV의 시장의 점차 형성, 확산되면서, 고휘도, 고속 응답기술에 대한 요구가 매우 중요한 사항으로 대두되고 있는 실정이다.Currently, the liquid crystal display device is expanding to a variety of small and medium display devices as well as notebooks, monitors and home TVs. In particular, as the LCD-TV market, which is attracting attention as a large market for monitors and new LCDs, is gradually forming and spreading, the demand for high brightness and high-speed response technology is emerging as an important matter.
가정용 TV에 대한 연구가 활발히 진행됨에 따라 TN(Twist Nematic), IPS (CE) 및 VA모드 등이 가정용 TV의 구동 방식으로 거론되고 있다.As research on home TVs is being actively conducted, TN (Twist Nematic), IPS (CE), and VA modes have been mentioned as driving methods of home TVs.
그러나, IPS (CE) 및 VA 모드는 넓은 시야각을 갖는 장점이 있으나 응답속도가 느려 동화상을 구현하기 어려울 뿐만 아니라 공정 상의 수율을 확보하는데 어려움이 있으며, 제조원가가 다소 높다는 문제점이 있다.However, IPS (CE) and VA mode has the advantage of having a wide viewing angle, but not only difficult to implement a moving image due to the slow response speed, it is difficult to secure the yield in the process, there is a problem that the manufacturing cost is rather high.
반면, TN 모드는 공정 수율 확보 및 제조원가에 있어서는 경쟁력이 있으나, 시야각이 협소하며, 응답속도가 느리다는 문제점이 있다. 즉, 액정 표시 장치에 특성을 만족시킬 수 있는 액정은 응답속도를 향상시키기 위해 낮은 점도 특성을 갖고 있어야 하며, 구동전압을 낮추기 위해 유전율 이방성(△ε)을 증가시켜야 한다. 또한, 넓은 온도 범위에서 네마틱 상을 가져야 하며, 복굴절율(△n) 값이 약 0.20 (약, 25℃) 이상이어야 한다.On the other hand, TN mode is competitive in securing process yield and manufacturing cost, but has a problem in that the viewing angle is narrow and the response speed is slow. That is, the liquid crystal capable of satisfying the characteristics of the liquid crystal display should have a low viscosity characteristic in order to improve the response speed, and increase the dielectric anisotropy (Δε) in order to lower the driving voltage. It should also have a nematic phase over a wide temperature range and have a birefringence (Δn) value of at least about 0.20 (about 25 ° C.).
그러나, 일반적인 TN, IPS 및 VA 모드 용 네마틱 액정의 응답속도는 약 20 내지 30ms로써, 원활한 동영상 구현을 위해서는 상기 액정의 응답속도를 단축시켜야 한다.However, in general, the response speed of nematic liquid crystals for TN, IPS, and VA modes is about 20 to 30ms, and the response speed of the liquid crystals needs to be shortened to realize smooth video.
상기 시야각에 대한 보상 문제는 보상필름 등의 개발로 차츰 개선되고 있으나, 응답속도는 액정 자체의 문제점으로써 액정 개발이 시급한 시점이다.The compensation problem for the viewing angle is gradually improved by the development of a compensation film, etc., but the response speed is a problem of the liquid crystal itself is an urgent time to develop the liquid crystal.
또한, 기존의 CRT 와 같은 성능을 갖도록 액정 표시 장치를 이용하여 고휘도의 디스플레이를 실현하기 위해서는 백라이트의 광량을 증가시켜야 한다. 이로 인해, 백라이트의 관전류 등에 의해 높은 열이 발생한다.In addition, in order to realize a high brightness display using a liquid crystal display device to have the same performance as a conventional CRT, the amount of light of the backlight must be increased. For this reason, high heat is generated by the tube current of the backlight or the like.
일반적으로 액정 표시 장치는 전극이 형성된 2개의 기판사이에 액정을 주입하여 제작되며, 전극이 형성된 2개의 기판에 외부에서 전압을 인가함으로써 기판 사이에 존재하는 액정이 외부 광원을 선택적으로 투과 혹은 차단하여 데이터를 가시적으로 표시하는 장치이다. 이때, 백라이트는 상기 액정과 매우 근접하여 직접적으로 광이 전달되게 된다. 따라서, 상기 백라이트의 관전류에 의해 발생한 열은 곧 액정 표시 장치의 액정에 전달되게 된다.In general, a liquid crystal display is manufactured by injecting a liquid crystal between two substrates on which electrodes are formed, and by applying a voltage to the two substrates on which electrodes are formed, liquid crystal present between the substrates selectively transmits or blocks an external light source. A device that displays data visually. In this case, the backlight is very close to the liquid crystal, and the light is directly transmitted. Therefore, heat generated by the tube current of the backlight is transferred to the liquid crystal of the liquid crystal display.
그러므로, 높은 상전이 온도를 갖는 액정이 필요하다. 그러나, 현재 상용화되고 있는 TN, IPS 및 VA 모드 용 네마틱 액정의 상전이 온도는 약 70 내지 80℃로 낮기 때문에 고휘도의 디스플레이를 실현의 어려움이 따르고 있는 실정이다.Therefore, a liquid crystal having a high phase transition temperature is needed. However, since the phase transition temperature of nematic liquid crystals for TN, IPS, and VA modes that are currently commercialized is low, about 70 to 80 ° C., high brightness displays are difficult to realize.
상기와 같은 문제점을 해결하기 위한 본 발명의 목적은 액정의 굴절 이방성 증가 및 상전이 온도를 높여 고속고온액정을 형성할 수 있는 네마틱 액정 화합물을 포함하는 네마틱 액정 조성물을 제공하는데 있다.An object of the present invention for solving the above problems is to provide a nematic liquid crystal composition comprising a nematic liquid crystal compound capable of forming a high-speed high temperature liquid crystal by increasing the refractive anisotropy and the phase transition temperature of the liquid crystal.
상술한 바와 같은 목적을 달성하기 위한 본 발명은,The present invention for achieving the above object,
하기식 (1)로 표기되는 네마틱 액정 화합물 및 호스트 혼합물을 포함하는 네마틱 액정 조성물을 제공하는데 있다.It is providing the nematic liquid crystal composition containing the nematic liquid crystal compound represented by following formula (1), and a host mixture.
상기 식 (1)에서 R은 CnH2n+1O, CnH2n+1, CnH2n-1중에서 선택된 하나이고, 이때 n은 1 내지 10이다. La은,,,중에서 선택된 하나이고, 이때 a는 0 또는 1이다. Mb은,,,중에서 선택된 하나이고, 이때 b는 0 또는 1이다. Nc은 -CF2O-, -CH2CH2-, -C = C-, -C ≡C-중에서 선택된 하나이고, 이때 c는 0 또는 1이다. X 는 H, F, Cl, Br, NCS , CN중에서 선택된 하나이고, Yd는 H, F, Cl, Br, NCS , CN중에서 선택된 하나이고, 이때 d는 0또는 1이다. Z는 NCS, SCN 또는 F중에서 선택된 하나이다.In Formula (1), R is one selected from C n H 2n + 1 O, C n H 2n + 1 , and C n H 2n-1 , wherein n is 1 to 10. L a is , , , It is one selected from, wherein a is 0 or 1. M b is , , , Is one selected from b, where b is 0 or 1. N c is one selected from —CF 2 O—, —CH 2 CH 2 —, —C═C—, —C≡C—, where c is 0 or 1. X is one selected from H, F, Cl, Br, NCS and CN, and Y d is one selected from H, F, Cl, Br, NCS and CN, where d is 0 or 1. Z is one selected from NCS, SCN or F.
이와 같이, 네마틱 액정 화합물을 포함하는 액정 조성물을 이용하여 액정을 제조할 경우 기존의 액정에 비해 상전이 온도를 약 30℃정도를 상승시킬 수 있을 뿐만 아니라 응답속도가 개선되어 고속고온의 액정을 제조할 수 있다.As such, when the liquid crystal is manufactured by using the liquid crystal composition containing the nematic liquid crystal compound, the phase transition temperature may be increased by about 30 ° C. as compared to the conventional liquid crystal, and the response speed is improved, thereby producing a liquid crystal having high speed and high temperature. can do.
이하, 본 발명을 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail.
본 발명의 네마틱 액정 화합물을 포함하는 액정 조성물은 고속응답, 고휘도기술을 목표로 액정의 굴절률 이방성 증가 및 상전이 온도를 높여 고속고온액정을 형성할 수 있다. 여기서, 네마틱 액정 화합물은 하기 식 (1)로 표기된다.The liquid crystal composition including the nematic liquid crystal compound of the present invention may form a high-speed high-temperature liquid crystal by increasing the refractive index anisotropy and increasing the phase transition temperature of the liquid crystal for the purpose of high-speed response and high brightness technology. Here, a nematic liquid crystal compound is represented by following formula (1).
상기 식 (1)에서 R은 CnH2n+1O, CnH2n+1, CnH2n-1중에서 선택된 하나이고, 이때 n은 1 내지 10이다. La은,,,중에서 선택된 하나이고, 이때 a는 0 또는 1이다. Mb은,,,중에서 선택된 하나이고, 이때 b는 0 또는 1이다. Nc은 -CF2O-, -CH2CH2-, -C = C-, -C ≡C-중에서 선택된 하나이고, 이때 c는 0 또는 1이다. X 는 H, F, Cl, Br, NCS , CN중에서 선택된 하나이고, Yd는 H, F, Cl, Br, NCS , CN중에서 선택된 하나이고, 이때 d는 0또는 1이다. Z는 NCS, SCN 또는 F중에서 선택된 하나이다.In Formula (1), R is one selected from C n H 2n + 1 O, C n H 2n + 1 , and C n H 2n-1 , wherein n is 1 to 10. L a is , , , It is one selected from, wherein a is 0 or 1. M b is , , , Is one selected from b, where b is 0 or 1. N c is one selected from —CF 2 O—, —CH 2 CH 2 —, —C═C—, —C≡C—, where c is 0 or 1. X is one selected from H, F, Cl, Br, NCS and CN, and Y d is one selected from H, F, Cl, Br, NCS and CN, where d is 0 or 1. Z is one selected from NCS, SCN or F.
보다 바람직한 본 발명의 네마틱 액정 화합물은 예컨대 3CC-CF2O-PFS 화합물로서, 상기 식 (1)에서 R은 프로필(propyl)이고, La은, Mb은이고, Nc은 -CF2O-이고, X는 플루오르(F)이고, Yd는 수소(H)이고, Z는 NCS이다.A more preferable nematic liquid crystal compound of the present invention is, for example, a 3CC-CF 2 O-PFS compound, in which R is propyl and L a is , M b is , N c is -CF 2 O-, X is fluorine (F), Y d is hydrogen (H), and Z is NCS.
또한, 5CC-CF2O-PFS 화합물로서, 상기 식 (1)에서 R은 프로필(pentyl)이고, La은, Mb은이고, Nc은 -CF2O-이고, X는 플루오르(F)이고, Y는 수소(H)이고, Z는 NCS이다.Further, as a 5CC-CF 2 O-PFS compound, in the formula (1), R is pentyl, L a is , M b is , N c is -CF 2 O-, X is fluorine (F), Y is hydrogen (H), and Z is NCS.
상술한 네마틱 액정 화합물을 포함하는 액정 조성물은 네마틱 액정 화합물과 호스트 혼합물로 구성된다. 이때, 상기 호스트 혼합물은 G1+ G2+ G3 + G4혼합물질로 구성되며, 액정의 응답속도는 셀갭 4.6 ㎛에서 16.2 ms로 측정되었으며, 복굴절률은 0.075이며, 유전율이방성 5.6이고, 상전이 온도는 80℃를 갖는다.The liquid crystal composition containing the nematic liquid crystal compound described above is composed of a nematic liquid crystal compound and a host mixture. At this time, the host mixture is composed of a G1 + G2 + G3 + G4 mixed material, the response rate of the liquid crystal was measured in 16.2 ms at the cell gap 4.6 ㎛, birefringence is 0.075, dielectric anisotropy 5.6, the phase transition temperature is 80 ℃. .
여기서, 상기식 (2)는 3CCO1, 상기식 (3)은 3CC3", 상기식 (4)는 5CC2", 상기식 (5)는 5CC3으로 명기되고, G1 혼합물은 3CC01(6.6%) +3CC3"(5.4%) +5CC2"(20.8%)+ 5CC3(4.1%)이루어진다.Wherein Formula (2) is 3CCO1, Formula (3) is 3CC3 ", Formula (4) is 5CC2", Formula (5) is specified as 5CC3, and G1 mixture is 3CC01 (6.6%) + 3CC3 ". (5.4%) + 5CC2 "(20.8%) + 5CC3 (4.1%).
여기서, 상기식 (6)은 2"CCPFF, 상기식 (7)은 3CCPOCF3, 상기식 (8)은 3CCPFFF으로 명기되고, 상기 G2는 2"CCPFF(11.07%)+ 3CCPOCF3(2.5%)+ 3CCPFFF(2.5%)로 이루어진다.Wherein Formula (6) is 2 "CCP FF , Formula (7) is 3CCP OCF3 , Formula (8) is 3CCP FFF , and G2 is 2" CCP FF (11.07%) + 3CCP OCF3 (2.5 %) + 3CCP FFF (2.5%).
여기서, 상기식 (9)는 2CCesPx, 상기식 (10)은 3CPFesPx, 상기식 (11)은 3CCesPx,으로 명기되며, 상기 G3은 2CCesPx(3.4%)+ 3CPFesPx(9.0%)+ 3CCesPx(9.4%)로 이루어진다.Here, Formula (9) is 2CCesP x , Formula (10) is 3CPFesP x , Formula (11) is specified as 3CCesP x, G3 is 2CCesP x (3.4%) + 3CPFesP x (9.0%) + 3CCesP x (9.4%).
상기식 (12)는 2CCPOCF3, 상기식 (13)은 2CCPFFF, 상기식 (14)는 2CCPF,OCF3, 상기식 (15)는 2CPFPFFF로 명기되며, 상기 G4는 2CCPocf3(8.66%)+ 2CCPFFF(8.0%)+ 2CCPF,OCF3(3.6%)+ 2CPFPFFF(4.97%)로 이루어진다.Formula (12) is 2CCP OCF3 , Formula (13) is 2CCP FFF , Formula (14) is 2CCP F, OCF3 , Formula (15) is 2CPFP FFF , G4 is 2CCP ocf3 (8.66%) + 2CCP FFF (8.0%) + 2CCP F, OCF3 (3.6%) + 2CPFP FFF (4.97%).
즉, 본 발명의 조성물에 포함되는 호스트 혼합물은 전체 혼합물의 기준으로 약 6.6 중량% 3CCO1, 약 5.4 중량%의 3CC3", 약 20.8 중량%의 5CC2", 약 4.1 중량%의 5CC3을 포함하고, 약 11.07 중량%의 2"CCPFF, 약 2.5 중량%의 3CCPOCF3, 약 2.5 중량%의 3CCPFFF를 포함하며, 약 3.4 중량%의 2CCesPx, 약 9 중량%의 3CPFesPx, 약 9.4 중량%의 3CCesPx를 포함하고, 약 8.66 중량%의 2CCPOCF3, 약 8 중량%의 2CCPFFF, 약 3.6 중량%의 2CCPF,OCF3, 약 4.97 중량%의 2CPFPFFF을 포함하고 있다.That is, the host mixture included in the composition of the present invention comprises about 6.6 wt% 3CCO1, about 5.4 wt% 3CC3 ", about 20.8 wt% 5CC2", about 4.1 wt% 5CC3 based on the total mixture, 11.07 wt% 2 "CCP FF , about 2.5 wt% 3CCP OCF3 , about 2.5 wt% 3CCP FFF , about 3.4 wt% 2CCesP x , about 9 wt% 3CPFesP x , about 9.4 wt% 3CCesP x , and about 8.66 wt% 2CCP OCF3 , about 8 wt% 2CCP FFF , about 3.6 wt% 2CCP F, OCF3 , about 4.97 wt% 2CPFP FFF .
그리고, 본 발명의 네마틱 액정 조성물에 포함되는 화합물은 식 (1)의 액정 화합물인 3CC-CF2O-PFS 및 5CC-CF2O-PFS이며, 상기 복굴절율, 유전율의 측정은 호스트(Host) 혼합물)에 3CC-CF2O-PFS 또는 5CC-CF2O-PFS을 17중량% 혼합하여 혼합 액정의 복굴절율, 유전율을 측정한 후 외삽법으로 단일의 액정 화합물의 복굴절율(Δn), 유전율을 측정하였다.The compounds included in the nematic liquid crystal composition of the present invention are 3CC-CF 2 O-PFS and 5CC-CF 2 O-PFS, which are liquid crystal compounds of Formula (1), and the measurement of the birefringence and the dielectric constant is performed by a host (Host ) mixture) 3CC-CF 2 O-PFS or 5CC-CF 2 O-PFS a 17% mixture by mixing a liquid crystal of the birefringence by weight of birefringence of then measuring the dielectric constant of a single crystal compound of the extrapolation (Δn in), The dielectric constant was measured.
본 발명의 네마틱 액정 화합물인 3CC-CF2O-PFS의 물성은 결정상에서 액정상 또는 등방성 액체상으로 상전이하는 온도인 m.p가 약 109℃이며, 액정상에서 등방성 액체상으로 상전이하는 온도인 TNI가 약 206℃이였다. 또한, 복굴절율(Δn)은 약 0.178이였으며, 유전율이방성(△ε)은 약 12.4이였다.The physical properties of 3CC-CF 2 O-PFS, the nematic liquid crystal compound of the present invention, is about 109 ° C, which is a temperature at which phase transition from a crystal phase to a liquid crystal phase or an isotropic liquid phase, and T NI is a temperature at which phase transition from a liquid crystal phase to an isotropic liquid phase is weak. It was 206 degreeC. In addition, birefringence (Δn) was about 0.178 and dielectric anisotropy (Δε) was about 12.4.
또한, 5CC-CF2O-PFS의 물성은 액정 상에서 등방성 액체상으로 상전이하는 온도인 TNI가 약 204℃이고, 복굴절율(Δn)이 약 0.172이였으며, 유전율 이방성(△ε)이 약 9.2이였다.In addition, the physical properties of the 5CC-CF 2 O-PFS is the temperature of T NI to phase transition to an isotropic liquid phase on the liquid crystal approximately 204 ℃, showed the birefringence (Δn) of about 0.172, yiyeotda dielectric anisotropy (△ ε) of about 9.2 .
이와 같은 특성을 갖는 본 발명의 네마틱 액정 화합물을 포함하는 액정 조성물은 복굴절율(Δn) 및 유전율 이방성(△ε)이 크며, 특히 상전이 온도가 높고 응답속도가 빠른 특성을 가지고 있다.The liquid crystal composition comprising the nematic liquid crystal compound of the present invention having such a characteristic has a high birefringence (Δn) and a dielectric anisotropy (Δε), and particularly, has a high phase transition temperature and a fast response speed.
따라서, 본 발명의 액정 조성물은 액정을 필요로 하는 여러 가지의 LCD 제품군의 소자, 예컨대 트위스트 네마틱(TN) 디바이스 장치, 수퍼 트위스트 네마틱(STN) 디바이스 장치, 박막트랜지스터(TFT)-트위스트 네마틱(TN) 디바이스 장치, IPS(in plane switching)디바이스 장치, VA(Vertically align)디바이스 장치등의 제조에 사용되어 고휘도 및 고속응답기술 등의 물성을 가지는 LCD를 얻을 수 있다.Accordingly, the liquid crystal composition of the present invention is a device of various LCD families requiring liquid crystal, such as twisted nematic (TN) device device, super twisted nematic (STN) device device, thin film transistor (TFT) -twist nematic It is used in the manufacture of (TN) device devices, IPS (in plane switching) device devices, and vertically align (VA) device devices to obtain LCDs having properties such as high brightness and high-speed response technology.
이하, 본 발명의 실시예 기재하여 상세히 설명하기로 한다. 여기서, 본 발명의 바람직한 실시예를 참조하여 설명하였지만 본 발명을 한정하는 것은 아니다.Hereinafter, an embodiment of the present invention will be described in detail. Herein, although the present invention has been described with reference to preferred embodiments, the present invention is not limited thereto.
[실시예]EXAMPLE
실시예 1Example 1
호스트 혼합물에 3CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여 네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 3CC-CF2O-PFS 물질을 포함하는 액정 조성물에서 상기 3CC-CF2O-PFS 물질이 5중량%일 경우, 상기 액정 혼합물의 TNI는 약 86.3℃ 이고, 복굴절율(Δn)은 약 0.0802이며, 유전율이방성(△ε)은 약 5.9(약, 20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 3CC-CF 2 O-PFS in the host mixture. When the 3CC-CF 2 O-PFS material is 5% by weight in the liquid crystal composition including the host mixture and the 3CC-CF 2 O-PFS material, the T NI of the liquid crystal mixture is about 86.3 ° C and the birefringence (Δn ) Was about 0.0802, and the dielectric anisotropy (Δε) was about 5.9 (about 20 ° C).
실시예 2Example 2
호스트 혼합물에 3CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여 네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 3CC-CF2O-PFS물질을 포함하는 네마틱 액정 조성물에서 상기 3CC-CF2O-PFS 물질이 10중량%일 경우, 상기 네마틱 액정 조성물의 TNI는 약 92.6℃이고, 복굴절율(Δn)은 약 0.0853이며, 유전율이방성(△ε)은 약 6.3(약, 20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 3CC-CF 2 O-PFS in the host mixture. In the nematic liquid crystal composition comprising the host mixture and the 3CC-CF 2 O-PFS material, when the 3CC-CF 2 O-PFS material is 10% by weight, the T NI of the nematic liquid crystal composition is about 92.6 ° C., The birefringence (Δn) was about 0.0853 and the dielectric anisotropy (Δε) was about 6.3 (about 20 ° C).
실시예 3Example 3
호스트 혼합물에 3CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여 네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 3CC-CF2O-PFS물질을 포함하는 네마틱 액정 조성물에서 상기 3CC-CF2O-PFS 물질이 15중량%일 경우, 상기 네마틱 액정 조성물의 TNI는 약 98.9℃이고, 복굴절율(Δn)은 약 0.0905이며, 유전율이방성(△ε)은 약 6.6(약, 20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 3CC-CF 2 O-PFS in the host mixture. When the 3CC-CF 2 O-PFS material is 15% by weight in the nematic liquid crystal composition including the host mixture and the 3CC-CF 2 O-PFS material, the T NI of the nematic liquid crystal composition is about 98.9 ° C., The birefringence (Δn) was about 0.0905 and the dielectric anisotropy (Δε) was about 6.6 (about 20 ° C).
실시예 4Example 4
호스트 혼합물에 3CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여 네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 3CC-CF2O-PFS물질을 포함하는 네마틱 액정 조성물에서 상기 3CC-CF2O-PFS 물질이 17.4중량%일 경우, 상기 액정 조성물의 TNI는 약 101.9℃이고, 복굴절율(Δn)은 약 0.094이며, 유전율이방성(△ε)은 약 6.7(약, 20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 3CC-CF 2 O-PFS in the host mixture. In the nematic liquid crystal composition comprising the host mixture and the 3CC-CF 2 O-PFS material, when the 3CC-CF 2 O-PFS material is 17.4% by weight, the T NI of the liquid crystal composition is about 101.9 ° C. and has a birefringence rate. (Δn) was about 0.094, and the dielectric anisotropy (Δε) was about 6.7 (about, 20 ° C).
실시예 5Example 5
호스트 혼합물에 3CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여 네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 3CC-CF2O-PFS물질을 포함하는 네마틱 액정 조성물에서 상기 3CC-CF2O-PFS 물질이 20중량%일 경우, 상기 액정 조성물의 TNI는 약 105.2℃이고, 복굴절율(Δn)은 약 0.0956이며, 유전율이방성(△ε)은 약 7.0(약, 20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 3CC-CF 2 O-PFS in the host mixture. In the nematic liquid crystal composition comprising the host mixture and the 3CC-CF 2 O-PFS material, when the 3CC-CF 2 O-PFS material is 20% by weight, the T NI of the liquid crystal composition is about 105.2 ° C., and the birefringence is (Δn) was about 0.0956, and the dielectric anisotropy (Δε) was about 7.0 (about, 20 ° C).
실시예 6Example 6
호스트 혼합물에 3CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여 네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 3CC-CF2O-PFS물질을 포함하는 네마틱 액정 조성물에서 상기 3CC-CF2O-PFS 물질이 25중량%일 경우, 상기 네마틱 액정 조성물의 TNI는 약 111.3℃이고, 복굴절율(Δn)은 약 0.1008이며, 유전율이방성(△ε)은 약 7.3(약, 20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 3CC-CF 2 O-PFS in the host mixture. In the nematic liquid crystal composition comprising the host mixture and the 3CC-CF 2 O-PFS material, when the 3CC-CF 2 O-PFS material is 25% by weight, the T NI of the nematic liquid crystal composition is about 111.3 ° C., The birefringence (Δn) was about 0.1008 and the dielectric anisotropy (Δε) was about 7.3 (about, 20 ° C).
실시예 7Example 7
호스트 혼합물에 3CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여 네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 3CC-CF2O-PFS물질을 포함하는 네마틱 액정 조성물에서 상기 3CC-CF2O-PFS 물질이 40중량%일 경우, 상기 네마틱 액정 조성물의 TNI는 약 130℃이고, 복굴절율(Δn)은 약 0.1162이며, 유전율이방성(△ε)은 약 8.3(약, 20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 3CC-CF 2 O-PFS in the host mixture. In the nematic liquid crystal composition comprising the host mixture and the 3CC-CF 2 O-PFS material, when the 3CC-CF 2 O-PFS material is 40% by weight, the T NI of the nematic liquid crystal composition is about 130 ° C., The birefringence (Δn) was about 0.1162, and the dielectric anisotropy (Δε) was about 8.3 (about, 20 ° C).
실시예 8Example 8
호스트 혼합물에 5CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 5CC-CF2O-PFS물질을 포함하는 액정 조성물에서 상기 5CC-CF2O-PFS 물질이 10중량%일 경우, 상기 액정 조성물의 TNI는 약 92.4℃이고, 복굴절율(Δn)은 약 0.0847이며, 유전율이방성(△ε)은 약 6.0(20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 5CC-CF 2 O-PFS in the host mixture. In the liquid crystal composition comprising the host mixture and the 5CC-CF 2 O-PFS material, when the 5CC-CF 2 O-PFS material is 10% by weight, the T NI of the liquid crystal composition is about 92.4 ° C and the birefringence (Δn ) Was about 0.0847, and dielectric anisotropy (Δε) was about 6.0 (20 ° C).
실시예 9Example 9
호스트 혼합물에 5CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여 네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 5CC-CF2O-PFS물질을 포함하는 네마틱 액정 조성물에서 상기 5CC-CF2O-PFS 물질이 15중량%일 경우, 상기 네마틱 액정 조성물의 TNI는 약 98.6℃이고, 복굴절율(Δn)은 약 0.0896이며, 유전율이방성(△ε)은 약 6.1(20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 5CC-CF 2 O-PFS in the host mixture. When the 5CC-CF 2 O-PFS material is 15% by weight in the nematic liquid crystal composition including the host mixture and the 5CC-CF 2 O-PFS material, the T NI of the nematic liquid crystal composition is about 98.6 ° C., The birefringence (Δn) was about 0.0896 and the dielectric anisotropy (Δε) was about 6.1 (20 ° C).
실시예 10Example 10
호스트 혼합물에 5CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여 네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 5CC-CF2O-PFS물질을 포함하는 네마틱 액정 조성물에서 상기 5CC-CF2O-PFS 물질이 17.5중량%일 경우, 상기 네마틱 액정 조성물의 TNI는 약 101.7℃이고, 복굴절율(Δn)은 약 0.093이며, 유전율이방성(△ε)은 약 7.2(20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 5CC-CF 2 O-PFS in the host mixture. In the nematic liquid crystal composition including the host mixture and the 5CC-CF 2 O-PFS material, when the 5CC-CF 2 O-PFS material is 17.5 wt%, the T NI of the nematic liquid crystal composition is about 101.7 ° C., The birefringence (Δn) was about 0.093 and the dielectric anisotropy (Δε) was about 7.2 (20 ° C).
실시예 11Example 11
호스트 혼합물에 5CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여 네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 5CC-CF2O-PFS물질을 포함하는 네마틱 액정 조성물에서 상기 5CC-CF2O-PFS 물질이 20중량%일 경우, 상기 네마틱 액정 조성물의 TNI는 약 104.8℃이고, 복굴절율(Δn)은 약 0.0944이며, 유전율이방성(△ε)은 약 6.3(20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 5CC-CF 2 O-PFS in the host mixture. When the 5CC-CF 2 O-PFS material is 20% by weight in the nematic liquid crystal composition including the host mixture and the 5CC-CF 2 O-PFS material, the T NI of the nematic liquid crystal composition is about 104.8 ° C., The birefringence (Δn) was about 0.0944 and the dielectric anisotropy (Δε) was about 6.3 (20 ° C).
실시예 12Example 12
호스트 혼합물에 5CC-CF2O-PFS으로 명기된 네마틱 액정 화합물을 혼합하여 네마틱 액정 조성물을 제조하였다. 상기 호스트 혼합물과 5CC-CF2O-PFS물질을 포함하는 네마틱 액정 조성물에서 상기 5CC-CF2O-PFS 물질이 40중량%일 경우, 상기 네마틱 액정 조성물의 TNI는 약 129.6℃이고, 복굴절율(Δn)은 약 0.1138이며, 유전율이방성(△ε)은 약 7.0(20℃)이였다.The nematic liquid crystal composition was prepared by mixing the nematic liquid crystal compound designated 5CC-CF 2 O-PFS in the host mixture. When the 5CC-CF 2 O-PFS material is 40% by weight in the nematic liquid crystal composition including the host mixture and the 5CC-CF 2 O-PFS material, the T NI of the nematic liquid crystal composition is about 129.6 ° C., The birefringence (Δn) was about 0.1138 and the dielectric anisotropy (Δε) was about 7.0 (20 ° C).
이와 같이, 실시예 1 내지 12에 적용되는 네마틱 액정 화합물의 첨가량에 따라 액정 조성물의 물성이 조절되며, 액정 디바이스 용도 (TN, IPS, OCB)에 따라 혼합물의 첨가량을 선택적으로 조절할 수 있다.As such, the physical properties of the liquid crystal composition may be adjusted according to the amount of the nematic liquid crystal compound applied to Examples 1 to 12, and the amount of the mixture may be selectively adjusted according to the liquid crystal device application (TN, IPS, OCB).
[비교 실시예]Comparative Example
기존의 액정 화합물인 NCS와 호스트 혼합물로 이루어진 네마틱 액정 조성물의 경우, 상전이 온도인 TNI가 약 70℃이고, 복굴절율(Δn)이 약 0.15이며, 응답속도가 14.6ms인 물성을 가지고 있어, 상기 액정 조성물로 제조된 상전이온도가 낮고, 굴절률이 높다.For a conventional nematic liquid crystal composition consisting of the liquid crystal compound is a mixture of NCS and the host, and the phase transition temperature of about 70 ℃ T NI, birefringence (Δn) is from about 0.15, it has a response time of 14.6ms properties, The phase transition temperature made of the liquid crystal composition is low, and the refractive index is high.
또한, 기존의 액정 화합물인 NCS를 포함하는 네마틱 액정 조성물은 TNI가 약 95℃이고, 복굴절율(Δn)이 약 0.089이며, 응답속도가 21.3ms인 물성을 가지고 고속 고온액정으로는 적용하기 어려운 문제점을 가지고 있다.In addition, the nematic liquid crystal composition including NCS, which is a conventional liquid crystal compound, has a T NI of about 95 ° C., a birefringence (Δn) of about 0.089, and a response speed of 21.3 ms, and is used as a high temperature liquid crystal. It has a hard problem.
반면에, 본 발명의 실시예 4의 물성을 갖는 네마틱 액정 조성물의 액정의 응답 속도는 11.8ms이고, 문턱전압(Threshold voltage)은 1.6V이며, 전압 보지율은 99.0을 나타낸다. 이는 호스트 혼합물 대비 응답속도가 73%로 줄었으며, 상전이온도가 127%로 증가하였으며 전압 보지율이 99.0으로 동영상 대응 고속 고온액정으로 사용할 수 있음을 나타낸다.On the other hand, the response speed of the liquid crystal of the nematic liquid crystal composition having physical properties of Example 4 of the present invention is 11.8ms, the threshold voltage is 1.6V, the voltage retention is 99.0. This shows that the response speed is reduced to 73% compared to the host mixture, the phase transition temperature is increased to 127%, and the voltage holding ratio is 99.0, which can be used as a high speed liquid crystal for video.
또한, 실시예 10의 물성을 갖는 네마틱 액정 조성물의 액정의 응답 속도는 12ms이고, 문턱전압(Threshold voltage)이 1.5V이며, 전압 보지율이 99.0을 나타낸다. 이는 호스트 혼합물 대비 응답속도가 75%로 줄었으며, 상전이온도가 127%로 증가하였으며 전압 보지율이 99.0으로 동영상 대응 고속 고온액정으로 사용할 수 있음을 나타낸다.In addition, the response speed of the liquid crystal of the nematic liquid crystal composition having the physical properties of Example 10 is 12 ms, the threshold voltage is 1.5V, and the voltage retention is 99.0. This shows that the response speed is reduced to 75% compared to the host mixture, the phase transition temperature is increased to 127%, and the voltage retention rate is 99.0, which can be used as a high speed liquid crystal for video.
상술한 바와 같이 본 발명에 의하면, 네마틱 액정 조성물에 적용되는 네마틱 액정 화합물은 TN 디바이스에 제품화가 가능한 동화상 대응 목적의 고속응답 및 고온특성을 동시에 충족시켜 줄 수 있다.As described above, according to the present invention, the nematic liquid crystal compound applied to the nematic liquid crystal composition can simultaneously satisfy the high-speed response and high temperature characteristics of the moving picture corresponding object that can be commercialized in the TN device.
따라서, 본 발명의 네마틱 액정 화합물을 포함하는 액정 조성물은 액정을 필요로 하는 여러 가지의 LCD 제품군의 소자, 예컨대 트위스트 네마틱(TN) 디바이스 장치, 수퍼 트위스트 네마틱(STN) 디바이스 장치, 박막트랜지스터(TFT)-트위스트 네마틱(TN) 디바이스 장치, IPS(in plane switching)디바이스 장치, VA(Vertically align)디바이스 장치등의 제조에 사용되어 고휘도 및 고속응답기술 등의 물성을 가지는 LCD를 얻을 수 있다.Accordingly, the liquid crystal composition comprising the nematic liquid crystal compound of the present invention is a device of various LCD families requiring liquid crystal, such as twisted nematic (TN) device device, super twisted nematic (STN) device device, thin film transistor It is used to manufacture (TFT) -Twisted Nematic (TN) device devices, IPS (in plane switching) devices, and vertically align (VA) devices to obtain LCDs with properties such as high brightness and high-speed response technology. .
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