KR20040092137A - Manufacturing method of Transflective liquid crystal display device array substrate - Google Patents

Abstract

PURPOSE: A method for fabricating an array substrate of a transflective LCD(Liquid Crystal Display) is provided to prevent a passivation layer under a reflecting electrode from being flattened to form the reflecting electrode having a desirable dimple pattern. CONSTITUTION: Gate lines and data lines for defining a plurality of pixel regions each of which includes a transmission part(E) and a reflection part(R) are formed on a substrate(200). A plurality of dimple patterns and the first passivation layer(224) having the first and second holes are formed on the substrate. The second passivation layer(226) is formed on the dimple patterns. The dimple patterns respectively correspond to the reflection part, transmission part and a peripheral region of the substrate. A reflecting electrode(228) is formed on the second passivation layer. The third passivation layer(230) is formed on the reflecting electrode. A transparent electrode is formed on the third passivation layer.

Description

Manufacturing method of Transflective liquid crystal display device array substrate

The present invention relates to a liquid crystal display device, and more particularly, to a method of manufacturing an array substrate for a reflective transmissive liquid crystal display device which can selectively use a reflection mode and a transmission mode.

In general, a liquid crystal display device is arranged so that the array substrate and the color filter substrate face each other at predetermined intervals, inject liquid crystal between the two substrates, and apply voltage to the field generating electrodes formed on the two substrates, respectively. The liquid crystal molecules are moved by an electric field generated therein, thereby controlling the transmittance of light that varies according to the device.

The liquid crystal display may be classified into a transmission type and a reflection type according to a light source to be used.

Transmissive liquid crystal display is a form of displaying the color by adjusting the amount of light according to the arrangement of the liquid crystal by injecting artificial light from the backlight (backlight) attached to the back of the liquid crystal panel to the liquid crystal The device is a form in which light transmittance is adjusted according to the arrangement of liquid crystals by reflecting external natural or artificial light.

Since the transmissive liquid crystal display uses an artificial rear light source, a bright image may be realized even in a dark external environment, but power consumption is large. On the other hand, the reflection type liquid crystal display device uses less power than the transmissive liquid crystal display device because most of the light depends on external natural light or artificial light source, but it cannot be used when the external light source such as a dark place is insufficient for reflection. There is this.

Accordingly, a reflection-transmissive liquid crystal display device, which is a liquid crystal display device for both reflection and transmission, has been proposed as a device capable of appropriately selecting and using a reflection mode and a transmission mode according to a necessary situation.

Hereinafter, a reflective transmissive liquid crystal display device will be described with reference to the accompanying drawings.

1 is a schematic cross-sectional view of a general reflective transmissive liquid crystal display device.

As illustrated in FIG. 1, a pixel electrode 20 is formed on a lower substrate 10 on which a thin film transistor (not shown), which is a switching element, is formed. The pixel electrode 20 is composed of a transmission electrode 21 and a reflection electrode 22.

The transmissive electrode 21 is relatively light transmittance such as indium-tin-oxide (hereinafter referred to as ITO) or indium-zinc-oxide (hereinafter referred to as IZO). One of the excellent transparent conductive materials is selected and manufactured, and the reflective electrode 22 is made of a material having a low resistance and a high reflectance such as aluminum (Al).

The upper substrate 30 is disposed above the lower substrate 10 at a distance from the lower substrate 10, and the color filter 40 is disposed below the upper substrate 30 at a position corresponding to the pixel electrode 20. Formed. A common electrode 50 made of a transparent conductive material such as ITO or IZO is formed under the color filter 40.

The liquid crystal layer 60 is inserted between the upper substrate 30 and the lower substrate 10.

Lower and upper retardation films 71 and 72 are disposed outside the two substrates 10 and 30, respectively, and the lower and upper retardation films 71 and 72 function to change polarization states of light. . Here, the lower and upper phase difference plates 71 and 72 change the phase of the light incident on the phase difference plate by λ / 4 (λ = 550 mm), which changes the incident linearly polarized light into circularly polarized light and the circularly polarized light into linearly polarized light. Play a role.

The lower polarizer 81 and the upper polarizer 82 are disposed outside the lower and upper retardation plates 71 and 72, respectively, and the light transmission axis of the upper polarizer 82 is about the light transmission axis of the lower polarizer 81. Has a 90 degree angle.

In addition, the backlight 90 is disposed outside the lower polarizer 81, that is, below the lower polarizer 81, to be used as a light source in a transmission mode.

FIG. 2 is a plan view schematically showing a part of a conventional array substrate for a transflective liquid crystal display device.

As shown in Fig. 2, gates and data lines 2 and 4 orthogonal to each other are formed on the array substrate, and the pixel region P is defined therebetween. The thin film transistor T is formed at the intersection of the gate and the data lines 2 and 4. At one end of the gate line 2 and the data line 4, a gate pad 6 and a data pad 8 that receive signals from the outside are configured. The thin film transistor includes a gate electrode 32, a source electrode 34, a drain electrode 36, and a semiconductor layer 38 positioned on the gate electrode 32.

Here, the pixel electrode 20 positioned in the pixel region P includes the transparent electrode 44 and the reflective electrode 46 having the transmission hole, and the pixel region P is largely the transmissive portion E and the reflective portion. It is divided into (R).

FIG. 3 is a cross-sectional view showing the pixel region P of the conventional reflective transmissive liquid crystal display device taken along the cut line III-III of FIG. 2. Here, the color filter substrate corresponding to the pixel region P is shown together.

As shown in FIG. 3, a gate insulating film 12 made of a silicon nitride film (SiNx) or a silicon oxide film (SiO 2) is formed on the lower substrate 10, and a first passivation film made of an organic film is formed on the gate insulating film 12. 14 is formed. The reflective electrode 44 is formed on the first passivation film 14, and the second protective film 18 is formed on the reflective electrode 44.

A transparent electrode 46 is formed on the second passivation layer 18, and the transparent electrode 46 is electrically connected to a thin film transistor (not shown).

The liquid crystal layer 60 is injected between the common electrode 50 and the transparent electrode 46. At this time, the liquid crystal layer 60 is arranged horizontally with respect to the substrate, by using a positive dielectric anisotropy to be aligned in parallel with the direction of the electric field when the electric field is formed.

The transmission part hole 23 is formed in the transmission part E. As shown in FIG. As shown in FIG. 3, the thickness d2 of the liquid crystal layer of the transmissive part hole 23 is formed to be thicker than the thickness d1 of the liquid crystal layer of the reflector R, which forms the liquid crystal layer in the transmissive mode and the reflective mode. To compensate for the phase difference of light passing through it. The phase difference Δn · d of the liquid crystal layer 60 depends on the anisotropy of refractive index (Δn) and the thickness d of the liquid crystal layer 60, but the liquid crystal layer of the transmissive portion 23 is different. When the thickness d2 has the same value as the thickness d1 of the liquid crystal layer of the reflecting portion, the luminance of light in the transmissive mode decreases than that of the light in the reflective mode.

Therefore, the thickness d2 of the liquid crystal layer 60 of the transmissive part E is formed to be thicker than the thickness d1 of the liquid crystal layer 60 of the reflective part B, and preferably doubled.

4 is an enlarged view of the reflector R illustrated in FIG. 3 and illustrates a path on which light incident from an external light source is reflected.

As shown in FIG. 4, when the reflective electrode surface is a plane, light incident from the outer left side is reflected to the outer right side at an angle equal to the angle incident through the reflective electrode 44. Thus, the image can be viewed from the outer right direction in which light is reflected. A sufficient amount of light is not reflected in the direction perpendicular to the reflective electrode surface, so that the efficiency decreases as the reflective transmissive liquid crystal display device in the reflective mode.

To this end, the reflective electrode 44 of the reflective transmissive liquid crystal display device is formed in an uneven shape.

FIG. 5 is a cross-sectional view illustrating a reflection electrode formed in a concave-convex shape of a dimple pattern in the reflection part R of the reflective transmissive liquid crystal display device.

As shown in FIG. 5, in the reflector R, a gate insulating film 112 is formed on the lower substrate 100, and a reflection including a first passivation layer and a second passivation layer 120 and 124 is formed thereon. An electrode lower passivation layer 140 is formed. The reflective lower protective film 140 is formed in a dimple pattern. The reflective electrode 128 is formed on the lower protective film 140, and the upper reflective film 130 and the transparent electrode 132, which are third protective films, are formed thereon.

The first passivation layer and the second passivation layer 120 and 124 use an organic insulating material, and select one of organic materials, such as benzocyclobutene (BCB) and acrylic resin, as the organic insulating material. Use it. In the case of using photo acryl among the acrylic resins, an exposure process and a developing process may be performed without applying photo resist in the process of forming a pattern by a subsequent photo process. The reflective electrode 128 is formed of a conductive material such as aluminum or an aluminum alloy in order to reflect light with high efficiency.

The third passivation layer 130 is selected from one of an organic insulating material such as acrylic resin and benzocyclobutene, and the transparent electrode 132 is formed of ITO, IZO, or the like, which is a transparent conductive metal material.

Hereinafter, with reference to FIG. 5, the method to form a reflective electrode in a dimple pattern is demonstrated.

First, the first passivation layer 120, which is an underlayer layer of the reflective electrode lower passivation layer 140, is coated on the substrate 100 on which the gate insulating layer is formed. The coating process uses a fas nozzle (Fas nozzel) method, which is to apply the material to be applied to a long rod, then the rod rod is rotated to apply while rubbing on the surface to be applied. After that, when the applied material is redistributed by the spin method, the protective film is evenly distributed.

Subsequently, a dimple pattern is first formed on the first passivation layer 120 coated in the above manner. The process of forming the dimple pattern is subjected to a photo lithography process. That is, a positive type photoresist (not shown) is coated on the first passivation layer 120, and a patterned mask (not shown) is positioned on the first passivation layer 120. The mask part corresponding to the recessed part of the 1st protective film 120 is set as the transmission area | region. Subsequently, an exposure process and a developing process are performed, and dry etching is performed to form a first passivation layer 120 having a concave-convex shape of a dimple pattern.

In the first protective film 120 pattern formed by the above process, the depth of the concave portion is formed deep. Therefore, among the light incident from the external light source, the light component reflected in the same direction as the incident direction increases. Therefore, the second passivation layer 124 is applied to the upper portion of the first passivation layer 120 to alleviate the bending of the dimple pattern.

The method of applying the second protective film 124 is the same as the method of applying the first protective film 120. The second passivation layer 124 is coated on the first passivation layer 120 having the shape of the dimple pattern by the pass nozzle method, and redistributed by the spin method.

As described above, the reflective electrode lower protective film 140 having the shape of the dimple pattern is formed in FIG. 5.

Subsequently, the reflective electrode 128 is deposited on the second passivation film 124. The deposited reflective electrode 128 has a concave-convex shape of a dimple pattern due to the second protective film 124 below. Subsequently, the third protective film 130 is coated on the reflective electrode 128, and the transparent electrode 132 is deposited.

In the above process, the reflective electrode 128 having the uneven shape of the dimple pattern may be formed on the array substrate for the reflective transmissive liquid crystal display device.

As shown in FIG. 5, when the reflective electrode is formed in the uneven shape of the dimple pattern, the light IIa and IIb incident from the external light source are reflected in the direction perpendicular to the substrate 100. Therefore, as compared with the case where the reflective electrode is formed in a flat surface, when the reflective electrode is formed in the uneven shape of the dimple pattern, the reflection efficiency of the reflective transmission liquid crystal display device is improved.

However, in order to form the reflective electrode 128 in the dimple pattern, the protective film 140 below the first electrode should be formed in the dimple pattern. As described above, in order to form a preferred dimple pattern, the lower protective layer 140 of the reflective electrode is formed of two layers, a first passivation layer and a second passivation layer. In the process of applying the second passivation layer 124, the dimple pattern is formed. The problem arises that the shape of is flattened.

The second passivation layer is applied by the pass nozzle method and the spin method. When applying the pass nozzle method, the second passivation layer 124 covers the dimple pattern of the first passivation layer 120 while smoothing the dimple pattern of the first passivation layer. In addition, thereafter, upon redistribution by the spin method, the second passivation film 124 is flattened so that a desired dimple pattern is not formed.

In the conventional reflection-transmissive liquid crystal display, a problem arises in that the protective film is flattened in the process of forming the protective film under the reflective electrode in the dimple pattern.

Accordingly, an object of the present invention is to prevent the protective film under the reflective electrode from being flattened, thereby forming a reflective electrode having a preferable dimple pattern unevenness.

1 is a schematic cross-sectional view of a general reflective transmissive liquid crystal display device.

2 is a plan view showing a part of an array substrate for a reflective transmissive liquid crystal display device;

FIG. 3 is a cross-sectional view of the transflective liquid crystal display device taken along the cutting line III-III of FIG. 2.

4 is an enlarged cross-sectional view of the reflector of FIG. 3;

5 is a cross-sectional view showing a reflector having a concave-convex shape of a dimple pattern.

6 is a cross-sectional view showing a pixel region and a peripheral portion of an array substrate for a reflective transmissive liquid crystal display device formed according to an embodiment of the present invention.

7A to 7F are cross-sectional views of a process of forming a reflective transmissive pixel region of an array substrate for a transflective liquid crystal display device having an uneven shape of a dimple pattern according to an embodiment of the present invention.

8A through 8D are cross-sectional views illustrating a process of forming peripheral holes in an array substrate peripheral area according to an exemplary embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

200: lower substrate 212: gate insulating film

223: permeable part hole 224: first protective film

226: second protective film 228: reflective electrode

230: third protective film 232: transparent electrode

243: periphery hall

In order to achieve the above object, the present invention includes the steps of forming a gate wiring line and a data wiring line defining a plurality of pixel regions composed of a transmission portion and a reflection portion perpendicular to each other on a substrate; A plurality of dimple patterns having a depth of D1 and first holes and a second having a depth of D2 on the substrate on which the gate wiring and the data wiring are formed, respectively corresponding to the reflecting portion, the transmitting portion, and the peripheral region of the substrate; Forming a first passivation layer having holes formed thereon; forming a second passivation layer on the dimple pattern;

Forming a reflective electrode on the second passivation layer; Forming a third passivation layer on the reflective electrode; It provides a method for manufacturing an array substrate for a reflective transmissive liquid crystal display device comprising forming a transparent electrode on the third protective film.

The depth D2 of the first hole and the second hole may be deeper than the depth D1 of the dimple pattern. In the forming of the first passivation layer having the dimple pattern formed thereon, the first passivation layer is coated, and a first photolithography process is performed such that the first hole, the second hole, and the dimple pattern have a depth of D1. Afterwards, a second photolithography process is performed such that the first hole and the second hole have a depth of D2.

The applying of the second passivation layer may include a parsing nozzle process of rubbing the second passivation layer on the first passivation layer on which the dimple pattern is formed, and a spin process of rotating the substrate thereafter.

In addition, the first protective film and the second protective film are the same organic insulating material, wherein benzocyclobutene is characterized in that. The transparent electrode is made of one selected from a transparent conductive metal material including ITO and IZO. And, the second hole is characterized in that a plurality is formed.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

6 is a cross-sectional view showing a pixel region P and a peripheral portion G of the array substrate for a transflective liquid crystal display device formed in accordance with an embodiment of the present invention.

The pixel region P defined by the gate wiring (not shown) and the data wiring (not shown) orthogonal to each other on the substrate 200 includes a reflecting portion R and a transmitting portion E.

The uneven | corrugated shape of a dimple pattern is formed in the reflecting part R. As shown in FIG. Due to the concave-convex shape of the dimple pattern, light incident on the array substrate from an external light source is reflected to travel in a direction perpendicular to the array substrate.

The reflective part R includes a gate insulating film 212, a reflective electrode lower protective film 240 formed of a first protective film and a second protective film on the lower substrate 200, an insulating substrate, a reflective electrode 228, The third protective film 230 and the transparent electrode 232 are stacked.

The transmission part hole 223 is formed in the transmission part E. FIG. The transmissive part hole 223 increases the surface area of the array substrate together with the peripheral portion G of the array substrate in a dimple pattern to form the reflective electrode lower protective film 240 of the reflector R, thereby maximizing frictional force. The reflective electrode lower protective layer 240 serves to prevent the planarization.

In addition, the transmissive part hole 223 functions to improve the brightness of light in the transmissive mode of the reflective transmissive liquid crystal display. At this time, the thickness d2 of the liquid crystal layer of the transmissive part hole 223 is formed to be thicker than the thickness d1 of the liquid crystal layer of the reflective part, and preferably formed to be twice. The gate insulating layer 210, the third passivation layer 230, and the transparent electrode 232 are stacked on the transmissive part E on the insulating substrate 200.

Periphery holes 243 are formed in the peripheral portion G of the array substrate. Peripheral hole 243 is formed along the periphery in the corner of the array substrate. As described above, the peripheral hole 243 has a function of maximizing the surface area of the array substrate to increase the frictional force when the reflective electrode lower protective film 240 of the reflecting portion R is formed in the uneven shape of the dimple pattern. do.

Although not shown, in another embodiment of the present invention, one or more peripheral holes may be preferably formed. As the number of periphery holes 243 increases, the upper area of the array substrate increases, so that the frictional force increases when the reflective electrode lower protective film 240 of the reflector R is formed into an uneven shape of a dimple pattern. It is particularly effective for the formation of dimple patterns.

The array substrate peripheral portion G has a structure in which a gate insulating film 212 and a protective film 241 are stacked on the lower substrate 200. The passivation layer 241 is formed like the reflective electrode lower passivation layer 240 formed in the pixel area P.

Hereinafter, a method of forming the reflective electrode 228 having the uneven shape of the dimple pattern will be described in detail with reference to the drawings.

7A to 7F and 8A to 8D, respectively, form a transmissive portion E, a reflective portion R, and a peripheral portion G of the pixel region P in the reflective transmissive liquid crystal display according to the exemplary embodiment of the present invention. It is sectional drawing which shows the process to make.

As shown in FIGS. 7A and 8A, the first passivation layer 214 is coated on the lower substrate 200 on which the gate insulating layer 212 is formed. In the process of applying the first passivation layer 214, as described above, after applying the first passivation layer 214 in a parsing manner, the first passivation layer 214 applied in a spin process is applied onto the substrate 200. Distribution.

The organic insulating film is selected from one of organic materials such as benzocyclobutene and acrylic resin.

Subsequently, a first photolithography step is performed. The photoresist 216 is applied on the first passivation layer 214, and the first mask 250 is positioned on the lower substrate 200 to form a concave-convex shape of a dimple pattern on the reflective part R. Let's do it. At this time, the photoresist 216 used is an example of a positive type in which the exposed portion is removed.

In the first mask 250 pattern, the transmission region A and the blocking region B are arranged on the reflective part R at regular intervals. The blocking area B on the reflective part R may have a polygonal shape or a circular or elliptical shape. This is to reduce the planar reflection component as much as possible. Only the transmissive region A is positioned above the transmissive portion E. A transmissive region A having a predetermined width is disposed on the array substrate peripheral portion G to form a peripheral hole 243. The transmission area A is positioned along the periphery of the lower substrate 200.

Subsequently, an exposure process and a developing process are performed. After the development process is performed, as shown in FIGS. 7B and 8B, photoresist patterns 217 and 218 are formed in the reflecting portion R, the transmitting portion E, and the peripheral portion G. As shown in FIG.

Subsequently, when the dry etching process is performed, patterned first passivation layer patterns 224 and 225 having a constant radius and depth are formed in the pixel region P and the peripheral portion G of the array substrate. At this time, holes are formed in the transmissive portion E and the peripheral portion G at the same depth as that of the dimple pattern. However, the hole depth of the transmission portion E and the peripheral portion G should be formed deeper than the dimple pattern. The reason is that, as described above, in the transmission mode of the reflective transmissive liquid crystal display device, in order to improve the brightness of light, the thickness of the liquid crystal layer of the transmissive part E must be thicker than the thickness of the liquid crystal layer of the reflective part R. In order to prevent the planarization during formation of the second passivation layer 226 having the dimple pattern described below, the surface area of the upper surface of the substrate on which the first passivation layers 224 and 225 are formed is preferably increased. To maximize.

To this end, a second photolithography process is performed in order to form the permeation hole 223 and the perimeter hole 243 in the permeation part E and the periphery part G, respectively. A photoresist (not shown) is coated on the substrate 200 on which the first passivation layer patterns 224 and 225 are formed, and a second mask (not shown) is positioned on the substrate. The second mask portion at the position corresponding to the reflecting portion R is a blocking region, and the second mask portion corresponding to the transmitting portion E and the peripheral portion G is a transmitting region. Subsequently, when the exposure process, the development process, and the dry etching process are performed, the transmission part hole 223 and the peripheral part hole 243 are formed in the transmission part E and the peripheral part G.

7C and 8C illustrate the first passivation layer patterns 224 and 225, the transmission hole 223, and the peripheral hole 243 patterned as described above.

Here, as shown in FIG. 7C, the first passivation film dimple pattern 224 formed in the reflector R is deeply dug. Thus, light (not shown) incident from an external light source (not shown) is not reflected in the desired direction. This is because the amount of light reflected obliquely from the external light source to the array substrate increases in the same direction as the incident direction. Accordingly, the second protective film is coated on the first protective film patterns 224 and 225 to alleviate the smoothness of the uneven shape of the dimple pattern.

7D and 8D illustrate second passivation layer patterns 226 and 227 formed on the first passivation layer patterns 224 and 225. The method of applying the second protective films 226 and 227 is the same as the method of applying the first protective film. After applying the second passivation film by the pass method, the second passivation film is redistributed by the spin method.

The transmissive hole 223 and the peripheral hole 243 formed in the same process as the first passivation layer patterns 224 and 225 have a function of increasing the surface area of the upper surface of the substrate 200 on which the first passivation layer patterns 224 and 225 are formed. Done. Accordingly, when the frictional force on the substrate 200 on which the first passivation layer patterns 224 and 225 are formed is increased, and the second passivation layer is redistributed in a spin manner, the reflection part R may be formed on the first passivation layer pattern 224. The second passivation layer pattern 226 is formed while maintaining the shape.

Therefore, as shown in FIG. 7D, the dimple pattern of the second passivation film 226 formed in the reflecting portion R is reduced in curvature. The second passivation layers corresponding to the holes 223 and 243 of the transmission portion E and the peripheral portion G are removed by a photolithography process.

Subsequently, as shown in FIG. 7E, the reflective electrode 228 is deposited on the second passivation films 226 and 227. As mentioned above, the reflective electrode 228 is formed of a conductive material such as aluminum or an aluminum alloy that reflects light well for high efficiency light reflection. At this time, the reflective electrode 228 is not formed in the peripheral portion G.

Subsequently, as shown in FIG. 7F, a third passivation layer 230 is coated on the pixel region P, and the transparent electrode 232 is deposited. The third passivation layer 230 is formed of an organic insulating material such as acrylic resin or benzocyclobutene, and the transparent electrode is formed of ITO or IZO, which is a transparent conductive metal material.

As described above, a reflective electrode having a concave-convex shape of a dimple pattern may be formed in the reflecting portion R of the pixel region P.

8A to 8D illustrate an example in which one peripheral hole is formed, but as described above, a plurality of peripheral holes may be formed in the peripheral part G according to another exemplary embodiment of the present invention.

As described above, when the peripheral hole is formed in the periphery thereof and the transmission hole is formed in the permeable part of the array substrate for a reflective transmissive liquid crystal display device, the reflective electrode having the uneven shape of the dimple pattern can be easily formed. There is.

In addition, due to the transmission hole formed in the transmission part to form the reflective electrode of the dimple pattern, the brightness of the light in the transmission mode is improved.

Claims (8)

Forming a gate wiring and a data wiring on the substrate, the gate wiring and the data wiring being orthogonal to each other and defining a plurality of pixel regions composed of a transmission portion and a reflection portion; A plurality of dimple patterns having a depth of D1 and first holes and a second having a depth of D2 on the substrate on which the gate wiring and the data wiring are formed, respectively corresponding to the reflecting portion, the transmitting portion, and the peripheral region of the substrate; Forming a first passivation layer having holes formed thereon: Forming a second passivation layer on the dimple pattern; Forming a reflective electrode on the second passivation layer; Forming a third passivation layer on the reflective electrode; Forming a transparent electrode on the third passivation layer Array substrate manufacturing method for a reflective transmissive liquid crystal display device comprising a. The method of claim 1, A method of manufacturing an array substrate for a reflective liquid crystal display device, wherein D2> D1. The method of claim 2, Forming the first passivation layer having the plurality of dimple patterns formed thereon, Applying the first passivation layer on the substrate on which the gate wiring and the data wiring are formed; Performing a first photolithography process on the coated first passivation layer such that the first hole, the second hole, and the dimple pattern have a depth of D1; Performing a second photolithography process such that the first hole and the second hole have a depth of D2; Array substrate manufacturing method for a reflective transmissive liquid crystal display device comprising a. The method according to any one of claims 1 to 3, Applying the second protective film, A pass nozzle process step of rubbing and coating the second passivation layer on the first passivation layer having the dimple pattern; A method of manufacturing an array substrate for a transflective liquid crystal display device comprising a spin process step of rotating a substrate on which the parse nozzle process is performed. The method of claim 1, The first protective film and the second protective film is a transparent substrate type liquid crystal display device array substrate manufacturing method of the same organic insulating material. The method of claim 5, wherein The organic insulating material forming the first protective film and the second protective film is benzocyclobutene. The method of claim 1, The transparent electrode is an array substrate manufacturing method for a reflective transmissive liquid crystal display device consisting of one selected from ITO or IZO. The method of claim 1, A method for manufacturing an array substrate for a reflective transmissive liquid crystal display device having a plurality of second holes.