KR20040085002A - Vapor deposition source, vapor deposition apparatus, organic el device, and method of manufacturing organic el device - Google Patents

Abstract

PURPOSE: A vapor deposition source, a vapor deposition apparatus, an organic EL device, and a method of manufacturing an organic EL device are provided to effectively use deposition materials and achieve improved uniformity of film formation on a substrate, by preventing thermal non-uniformity in a container. CONSTITUTION: A vapor deposition source(10) comprises a container(12) for accommodating an organic compound as a deposition material(11); a heater unit(13) for heating the deposition material; and a flow unit for flowing the deposition material within the container. The deposition material flows from a center toward a peripheral part of the container by the flow unit constituted by a stirring member arranged in the container.

Description

Evaporation source, vapor deposition apparatus, organic EL element, and manufacturing method of this organic EL element {VAPOR DEPOSITION SOURCE, VAPOR DEPOSITION APPARATUS, ORGANIC EL DEVICE, AND METHOD OF MANUFACTURING ORGANIC EL DEVICE}

The present invention relates to a vapor deposition source, a vapor deposition apparatus, an organic EL device using the same, and a method of manufacturing the same.

In recent years, various functional elements using thin films made of organic compound materials have been developed, and among them, organic EL elements in particular have been attracting attention in the field of display and lighting as self-luminous thin display elements or surface light emitting sources. This organic EL element has a basic structure which forms a lower electrode on a board | substrate, forms the thin film of the organic functional layer which consists of organic compounds on it, and forms an upper electrode on it.

Organic compound materials used for functional elements, such as organic EL elements, are sublimable and can be evaporated at a relatively low temperature of 200 to 400 ° C. Therefore, vacuum deposition is generally employed for the formation of a thin film of such an organic compound. In vacuum deposition, a deposition source is disposed facing a substrate held in a vacuum chamber, and vapor deposition generated from the deposition source is applied to the substrate surface to form a thin film made of a deposition material on the substrate.

In vacuum vapor deposition using an organic compound as a vapor deposition material, a container containing a vapor deposition material as a vapor deposition source and a heating means for heating the vapor deposition material in the container are used. Such heating means may be one capable of heating and subliming (or vaporizing) the vapor deposition material, and by the resistance heating method which generates heat by flowing an electric current through the heating wire installed in the container itself or inside or outside the container, and the electron beam to the vapor deposition material or the container. , Heating by irradiation with laser light, infrared light, or the like, or by a high frequency induction heating method is appropriately employed.

BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing which shows the vapor deposition source (refer patent document 1) of the prior art in the vacuum vapor deposition apparatus which forms the thin film of an organic compound. As shown in Fig. 1 (a), the vapor deposition source 1 includes a container 3 called a crucible for accommodating the vapor deposition material 2, and a crack disposed outside the container 3; The member 4, the heater 5 which heats the vapor deposition material 2 in the container 3 via this crack member 4, the heat insulation layer 6 provided in the outer side of this heater, and the heater 5 The thermocouple 7 for temperature control of is provided. Here, the container 3 is a cylindrical container formed of a material such as quartz, carbon graphite, glass component-containing graphite, boron nitride, alumina, or the like, and has a relatively large opening 3A, and a shutter device (not shown) is provided thereon. have. The crack member 4 is for uniformly and efficiently transferring heat from the heater 5 to the container 3, and is formed of materials such as SUS and Cu.

(Patent Document 1) Japanese Unexamined Patent Application Publication No. 2000-160328 (Fig. 3, paragraphs 0079 to 0081)

According to this deposition source, as shown in FIG. 1B, the deposition material 2 is rapidly heated to the sublimation temperature by the heat H transmitted from the heater 5 in the vicinity of the inner wall surface of the container 3. In the center M of the container 3, although the temperature of vapor deposition material is low at the beginning of heating, it is in the state which does not satisfy a sublimation temperature. Since the organic compound used for organic functional layers, such as an organic electroluminescent element, generally has low thermal conductivity, when this is made into a vapor deposition material, the thermal nonuniformity in a container will show remarkably by the response delay of the above-mentioned heat transfer. In addition, this thermal nonuniformity becomes more pronounced with larger containers.

As the functional element to be formed is enlarged, the container of the evaporation source also tends to be enlarged. In the enlarged deposition source, due to the above-described thermal nonuniformity, only a portion of the vapor deposition material contained in the container close to the inner wall surface of the container is evaporated, and the vapor deposition material near the center of the container remains without evaporation. Occurs. In order to solve this problem, when the temperature of the heater is raised and the vapor deposition material near the center of the container is heated to the sublimation temperature, the vapor deposition material near the inner wall surface of the container is excessively heated to adhere to the inner wall surface, and the material deteriorates. Such a phenomenon occurs that is not effectively used.

In addition, the above-described thermal nonuniformity causes nonuniform distribution in the density of deposition streams radiated from the opening of the container, resulting in nonuniformity of the film formed on the substrate, and in the worst case, a defect may occur in the film. .

In particular, in the formation of the organic functional layer in the organic EL device, not only the expensive organic functional layer material is effectively used, but also the production of a good product is inhibited, and the yield of material and element formation is lowered. This causes a problem of causing an increase in manufacturing cost.

This is a problem caused by the enlargement of the container of the evaporation source regardless of the type of heating means in the evaporation source. That is, in the case of heating the vapor deposition material by heat transfer from the heating means provided on the outside of the container, as described above, thermal nonuniformity occurs in the vicinity of the center of the container and in the vicinity of the periphery, but when the heat source is provided inside the container, The same thermal nonuniformity occurs in the near and far parts of the heat source.

One of the problems of the present invention is to cope with this problem. That is, an object of the present invention is to effectively utilize a vapor deposition material by eliminating thermal irregularities in a container in a vapor deposition source, to form a uniform film on a substrate, and to reduce the manufacturing cost of the element to be formed.

1 is an explanatory diagram of a prior art.

2 is an explanatory diagram showing a deposition source according to an embodiment of the present invention.

3 is an explanatory diagram showing a deposition source according to an embodiment of the present invention.

4 is an explanatory diagram showing a deposition source according to an embodiment of the present invention.

5 is an explanatory diagram showing a deposition source according to another embodiment of the present invention.

6 is an explanatory diagram showing a deposition source according to another embodiment of the present invention.

7 is an explanatory diagram showing a deposition source according to another embodiment of the present invention.

8 is an explanatory diagram showing a deposition apparatus according to an embodiment of the present invention.

9 is an explanatory diagram showing a deposition apparatus according to an embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

10 to 60: evaporation source

11: deposition material

12: container

13: heating means

21: magnetic stirrer

22, 34, 44, 54, 62: drive unit

31: axial stirring blade

41: floating type stirring blade

51: stirring blade

32, 42, 52: axis of rotation

33, 43, 53: bearing

61: drive shaft

63: protrusion

70, 80: vapor deposition apparatus

71, 81: substrate

72, 82: vacuum chamber

82A, 82A: Mounting section

73 and 83: substrate support

74, 84: bottom plate

75, 85: no deposition control regulation

In order to achieve this object, the present invention includes at least the configuration according to each of the following independent claims.

The present invention provides a flow means for flowing the vapor deposition material in the container, including a container containing the organic compound as a vapor deposition material, and a heating means for heating the vapor deposition material in the container. It provides a vapor deposition source characterized in that it comprises.

In addition, the present invention provides a method of manufacturing an organic EL device, in which a lower electrode is formed on a substrate, an organic functional layer having at least a light emitting functional layer is formed on the lower electrode, and an upper electrode is formed on the organic functional layer. And the deposition of the organic functional layer is effected by vacuum deposition from a deposition source having flow means for flowing the deposition material from the central portion to the peripheral portion in the vessel.

Best Mode for Carrying Out the Invention Embodiments of the present invention will be described below with reference to the drawings. 2 is an explanatory diagram showing a deposition source according to an embodiment of the present invention. The vapor deposition source 10 is equipped with the container 12 in which the vapor deposition material 11 which consists of organic compounds is accommodated, and the heating means 12 which heats the vapor deposition material in this container 12 is carried out. The vessel 12 is a cylindrical vessel formed of high melting point oxides such as titanium (Ti), alumina (Al ₂ O ₃ ), veria (BeO), and the heating means 13 is, for example, tantalum (Ta), The filament of a high melting point metal, such as molybdenum (Mo) and tungsten (W), or a coil for a heating is wound directly or indirectly on the outer periphery of the container 12, and is energized. It is not limited to these, As the material of the container 12, another material may be used, and as the heating means 13, the various means shown as a prior art can also be employ | adopted.

In addition, the deposition source 10 according to the embodiment of the present invention includes flow means for flowing the deposition material 11 in the vessel 12. This flow means is, for example, capable of flowing the deposition material 11 from the central portion M toward the peripheral portion A in the vessel 12. As a specific flow means, it may be comprised by the stirring means mentioned later, and other things, such as heat generation of convection, etc. may be sufficient.

3 is an explanatory diagram showing a deposition source 20 according to an embodiment of the present invention (the same parts as those described above are denoted by the same reference numerals and some descriptions of overlapping portions will be omitted). The specific example of the above-mentioned stirring means is shown, and the magnetic stirrer 21 is used here. The magnetic stirrer 21 is put into the container 12 which consists of a nonmagnetic substance, and is rotationally driven by the drive device 22 provided in the exterior of the container. When the structure of the magnetic stirrer 21 is schematically described, the magnetic stirrer 21 introduced into the container 12 has a permanent magnet built therein, and a disc on the rotating shaft of the motor installed inside the drive device 22. Is attached, and the other permanent magnet is fixed to this disk upper surface. Then, the permanent magnet rotated by the rotation of the motor and the magnetic stirrer 21 are magnetically coupled, and the stirrer is rotated in the container 12. As a result, the rotation of the magnetic stirrer 21 causes the vapor deposition material in the container 12 to be stirred, and a circulation flows from the central portion in the container 12 toward the periphery.

FIG. 4 is an explanatory diagram showing a deposition source 30 according to another embodiment of the present invention (parts identical to those described above are denoted by the same reference numerals, and descriptions of overlapping portions will be omitted). One specific example of the above-mentioned stirring means is shown, and the thing using the axial-type stirring blade 31 is shown here. The axial stirring blade 31 is a stirring blade which consists of a propeller or a helical ribbon blade, Preferably it is provided in the center part of the container 12. As shown in FIG. Referring to the structure of the axial stirring blade 31 schematically, the rotating shaft 32 of the axial stirring blade 31 withdraws out of the container 12 through an airtight bearing 33 installed in the bottom center of the container 12. This rotation shaft 32 is rotationally driven by the drive device 34 provided outside the container 12.

According to this axial stirring blade 31, the vapor deposition material 11 is pushed out from the stirring blade part to the bottom of the container 12, and it pushes out like this, and the vapor deposition material 11 of the bottom of the container 12 is a container. It flows upward along the inner wall surface of (12). As a result, a circulation path of the deposition material 11 from the center portion to the peripheral portion is formed. And the vapor deposition material 11 receives heat efficiently from the heating means 13 located on the outer side of an inner wall surface when it flows upward along the inner wall surface of the container 12, and from the center part in the container 12, Since the circulation toward the surroundings is repeated, the entire deposition material 11 can be heated uniformly. This deposition source 30 is particularly effective when the deposition material 11 is a highly viscous fluid or powder.

FIG. 5 is an explanatory diagram showing a deposition source 40 according to another embodiment of the present invention (parts identical to those described above are denoted by the same reference numerals and some descriptions of overlapping portions will be omitted). One specific example of the above-mentioned stirring means is shown, and the thing using the water-flow type stirring blade 41 is shown here. The splash type stirring blade 41 is a stirring blade made of a disk turbine blade or the like, and is preferably provided at the center portion of the vessel 12. When the structure of the water-flow type stirring blade 41 is demonstrated schematically, the rotating shaft 42 of the water-flow type stirring blade 41 is pulled out of the container 12 through the airtight bearing 43 installed in the bottom center of the container 12. This rotation shaft 42 is rotationally driven by the drive device 44 provided outside the container 12.

According to this flood type stirring blade 41, the vapor deposition material 11 is pressed toward the inner wall surface of the container 12 from the stirring blade part, and the pressurized vapor deposition material 11 is along the inner wall surface of the container 12. It flows upward or downward. For this reason, the vapor deposition material 11 receives heat efficiently from the heating means 13 located outside of an inner wall surface when it flows up or down along the inner wall surface of the container 12, and by the flow mentioned above, Since the circulation from the central portion in the vessel 12 toward the periphery takes place, the entire deposition material 11 can be heated uniformly. This vapor deposition source 40 is particularly effective when the vapor deposition material 11 is a low viscosity fluid.

FIG. 6 is an explanatory diagram showing a deposition source 50 according to another embodiment of the present invention (parts identical to those described above are denoted by the same reference numerals and some descriptions of overlapping portions will be omitted). In this embodiment, a plurality of stirring blades 51 of the above-described axial flow type or flood flow type are provided in the longitudinal axis direction to form a multi-stage blade. It is preferable that this stirring blade 51 is also provided in the center part of the container 12 like embodiment mentioned above.

When the structure of the stirring blade 51 is demonstrated schematically, the rotating shaft 52 will be pulled out of the container 12 through the airtight bearing 53 installed in the bottom center of the container 12, and this rotating shaft 52 will be made to the container ( It is rotationally driven by the drive device 54 provided outside of 12). A plurality of wings is attached along the rotation shaft 52 to form a multistage wing. For this reason, since the vapor deposition material of the other layer in the container 12 flows directly by the stirring blade 51, circulation of the above-mentioned vapor deposition material 11 can be performed more effectively. According to this vapor deposition source 50, it is effective especially when the container 12 is vertically long.

FIG. 7 is an explanatory diagram showing a deposition source 60 according to another embodiment of the present invention (parts identical to those described above are denoted by the same reference numerals and some descriptions of overlapping portions will be omitted). FIG. 7A is a side cross-sectional view, and FIG. 7B is a plan view. On the other hand, the deposition source 60 according to this embodiment is characterized in that the container 12 is rotated around the central axis. By driving the drive shaft 61 attached to the bottom of the container 12 by the drive device 62, the container 12 is driven to rotate around the cylindrical axis.

According to this, since the vapor deposition material 11 which contacts the inner wall surface of the container 12 can flow in the rotation direction of the container 12, it is possible to flow the vapor deposition material 11 in the container 12 by itself. In addition, by combining with the stirring means of each of the above-described embodiments, the flow around the axis can be added to the flow in the vertical direction by the stirring means, so that the vapor deposition material 11 in the container 12 can be circulated in multiple directions. More effective circulation is possible.

In addition, the deposition source 60 is characterized in that the projection portion 63 is provided in the vertical direction. According to this, since the vapor deposition material 11 which contacts the inner wall surface of the container 12 can reliably flow by the protrusion part 63, the effect | action by the rotation of the container 12 mentioned above can be heightened further.

In addition, the vapor deposition source 60 is characterized by inclining the container 12 (at an inclination angle α) such that the contained deposition material 11 does not overflow. According to this, the direction of flow by gravity changes with respect to the flow of the vapor deposition material 11 by the above-mentioned stirring means, or the flow of the vapor deposition material 11 by the rotation of the container 12, so that it is more multidimensional It is possible to flow the deposition material 11 in the vessel 12.

The vapor deposition apparatus according to the embodiment of the present invention can be configured by providing these vapor deposition sources 10 to 60 in a vacuum chamber so as to face the substrate to be deposited. 8 is an explanatory diagram showing one embodiment of this vapor deposition apparatus. The vapor deposition apparatus 70 is an apparatus for vaporizing various vapor deposition materials on the board | substrate 71, and can be used for manufacture of organic electroluminescent element. This vapor deposition apparatus 70 is provided with at least the vacuum chamber 72, the board | substrate holding part 73 which hold | maintains the board | substrate 71, and the vapor deposition source 50 mentioned above. The vacuum chamber 72 includes a vacuum exhaust system provided with a vacuum pump (not shown) or the like, and is capable of maintaining the inside at a predetermined pressure. The substrate holding part 73 is provided in the upper part in the vacuum chamber 72, and the vapor deposition source 50 is provided in the lower part facing the substrate holding part 73. As shown in FIG.

As for the vapor deposition source 50, the above-mentioned structural member is arrange | positioned in the installation part 72A provided in the bottom face of the vacuum chamber 72. As shown in FIG. Here, the vertical cylindrical part extends downward from the opening formed in the bottom face of the vacuum chamber 72, and the installation part 72A is formed, The heater 13 mentioned above is arrange | positioned in the side surface, and it is inside The container 12 mentioned above is arrange | positioned. The bottom plate 74 is hermetically flanged to the lower end of the mounting portion 72A, and the above-described driving device 54 is mounted on the bottom plate 74. Moreover, the vapor deposition flow control member 75 which regulates the direction of vapor deposition flows to the board | substrate 71 direction is arrange | positioned on the opening part of the container 12 as needed.

According to this vapor deposition apparatus 70, the vapor deposition material accommodated in the container 12 in the vapor deposition source 50 receives the stirring action of the stirring blade 51 which is rotationally driven by the drive device 54, and is in the container 12. In FIG. Flows in, heat is uniformly transferred from the heater 13. For this reason, the sublimation or vaporized vapor deposition material becomes uniform vapor deposition, and is apply | coated to the board | substrate 71 through the vapor deposition control member 75 in the opening part of the container 12. As shown in FIG.

9 is an explanatory diagram showing another embodiment of this vapor deposition apparatus. The vapor deposition apparatus 80 is a device for depositing various vapor deposition materials on the substrate 81, and at least the vacuum chamber 82, the substrate holding portion 83 holding the substrate 81, as in the above-described embodiment; The deposition source 60 described above is provided.

Each of the above-mentioned structural members is disposed in the mounting portion 82A provided on the bottom surface of the vacuum chamber 82 at the left and right symmetry (or axial symmetry with respect to the vertical central axis O). Here, the tubular portion inclined at a predetermined angle (an angle at which the deposition material in the container 12 does not overflow) with respect to the vertical from the opening formed in the bottom surface of the vacuum chamber 82 is provided to extend downward to install the portion ( 82A) is formed, the heater 13 mentioned above is arrange | positioned in the side surface, and the container 12 mentioned above is arrange | positioned inside it. The bottom plate 84 is hermetically flanged to the lower end of the mounting portion 82A, and the drive device 62 described above is mounted on the bottom plate 84. Moreover, as needed, the vapor deposition flow control member 85 which regulates the direction of vapor deposition flows to the board | substrate 81 direction is arrange | positioned on the opening part of the container 12. As shown in FIG.

According to such a vapor deposition apparatus 80, the vapor deposition material accommodated in the container 12 in the vapor deposition source 60 of the container 12 and the protrusion part 63 provided in the inner wall surface by which the rotation apparatus is rotationally driven by the drive apparatus 62 is carried out. In addition to the action, the container 12 is inclined to flow in the container 12 in multiple directions to uniformly transfer heat from the heater 13. For this reason, the sublimation or vaporized vapor deposition material becomes uniform vapor deposition, and is apply | coated to the board | substrate 71 through the vapor deposition control member 85 in the opening part of the container 12. As shown in FIG.

In addition, in the deposition apparatus according to the embodiment of the present invention, a deposition source of the deposition apparatus 70 is installed below the substrate by combining the deposition apparatuses 70 and 80 according to the above-described embodiment, and the deposition apparatus around the deposition apparatus. The structure which provides two or more deposition sources of 80 may be sufficient. According to this structure, the trace material (guest material) which uses the vapor deposition material of the vapor deposition source arrange | positioned under the perpendicular | vertical of a board | substrate as a main component (host material) of organic compound, and dopes the vapor deposition material of vapor deposition source arrange | positioned in the periphery as a main component (guest material) You can also do

The vapor deposition apparatuses 70 and 80 of the above-mentioned embodiment are effective for manufacture of an organic electroluminescent element, and are especially effective for manufacture of the organic electroluminescent element which consists of a board | substrate with a large area. In the method for producing an organic EL element, a lower electrode is formed on a substrate, an organic functional layer having at least a light emitting functional layer is formed on the lower electrode, and an upper electrode is formed on the organic functional layer. In the embodiment of the present invention, the deposition of the organic functional layer is performed by the above-described deposition apparatuses 70 and 80, and at least one layer of the organic functional layer provides a flow means for flowing the deposition material from the central portion to the peripheral portion in the container. It forms into a film by vacuum vapor deposition from the vapor deposition sources 10-60 provided. When forming an organic functional layer by the vapor deposition apparatuses 70 and 80 shown in FIG. 8 and FIG. 9, the mask M is arrange | positioned on the board | substrate 71 and 81 as needed. For this reason, the organic functional layer of a desired pattern is formed by mask deposition.

The organic EL element manufactured by such a manufacturing method is characterized by including at least one organic functional layer formed by deposition flows from the deposition sources 10 to 60 described above. In the structure of the organic functional layer of the organic EL element, the structure of the hole transporting layer / light emitting layer / electron transporting layer is generally used when the lower electrode is the anode and the upper electrode is the cathode, but only one light emitting layer, the hole transporting layer, and the electron transporting layer are provided. Alternatively, a plurality of layers may be laminated and provided, and either of the layers may be omitted for the hole transporting layer and the electron transporting layer, or both layers may be omitted and only the light emitting layer may be used. Moreover, as an organic functional layer, organic layers, such as a hole injection layer, an electron injection layer, a hole barrier layer, an electron barrier layer, can be inserted according to a use. The organic light emitting functional layer may be an electron transporting layer / light emitting layer / hole transporting layer, the lower electrode may be a cathode, and the upper electrode may be an anode.

Examples of the organic functional layer material that can be employed as an embodiment of the present invention are illustrated below, but are not particularly limited to these materials.

As a hole transport layer, what is necessary is just to have a function with high hole mobility, and as a material, arbitrary things can be selected and used out of a conventionally well-known compound. Specific examples include porphyrin compounds such as copper phthalocyanine, aromatic third amines such as 4,4'-bis [N- (1-naphthyl) -N-phenylamino] -biphenyl (NPB), and 4- (di-p Stilbene compounds, such as -tolylamino) -4 '-[4- (di-p-tolylamino) styryl] steel benzene, and organic materials, such as a triazole derivative and a styrylamine compound, are used. Moreover, the material of the polymer dispersion type which disperse | distributed the low molecular organic material for hole transport in polymers, such as polycarbonate, can also be used.

A light emitting layer can use a well-known light emitting material, As an example, Aromatic dimethylidene compounds, such as 4,4'-bis (2,2'- diphenylvinyl) -biphenyl (DPVBi), 1, 4-bis (2- Styryl benzene compounds such as methyl styryl) benzene, triazole derivatives such as 3- (4-biphenyl) -4-phenyl-5-t-butylphenyl-1,2,4-triazole (TAZ), anthra Fluorescent organic materials such as quinone derivatives and fluorenone derivatives, fluorescent organometallic compounds such as (8-hydroxyquinolinato) aluminum complex (Alq ₃ ), polyparaphenylenevinylene (PPV), polyfluorene, Polymeric materials, such as a polyvinylcarbazole (PVK) system, and organic materials (patent 2001-520450) which can utilize phosphorescence from triplet excitons, such as a platinum complex and an iridium complex, can be used for light emission. It may consist of only the above-mentioned light emitting material, and may contain a hole transport material, an electron transport material, an additive (donor, acceptor, etc.), a luminescent dopant, etc. In addition, they may be dispersed in a polymer material or an inorganic material.

The electron transporting layer may have a function of transferring electrons injected from the cathode to the light emitting layer, and any material can be selected and used from conventionally known compounds. As a specific example, organic materials, such as a nitro substituted fluorenone derivative and an anthraquinodimethane derivative, the metal complex of 8-quinolinol derivatives, a metal phthalocyanine, etc. can be used.

The characteristics in the Example of this invention are summarized as follows.

Firstly, in a vapor deposition source, comprising an organic compound as a vapor deposition material, a container for accommodating the vapor deposition material, and heating means for heating the vapor deposition material in the container, and simultaneously flowing the vapor deposition material in the container. Since it is provided with the flow means to make it, even when using an organic compound with low heat transfer rate generally as a vapor deposition material, it can be circulated so that a vapor deposition material may be sequentially sent to the position heated directly in the vicinity of a heating means, Regardless, it becomes possible to uniformly heat the deposition material in the container.

As a result, even in a large deposition source, the vapor deposition material in the container can be left without evaporation, and thermal nonuniformity in the container can be eliminated, so that the deposition flows from the opening of the container can be made uniform.

Secondly, in the deposition source, in addition to the above-mentioned features, the deposition means flows the deposition material from the central portion to the peripheral portion in the vessel. For this reason, especially in the vapor deposition source which provided the heating means in the outer side of a container, since the vapor deposition material of the center part which heat from a heating means is hard to transfer can flow to the peripheral part near a heating means, this flow is repeated. Thus, by circulating the deposition material in the container, it is possible to effectively eliminate the thermal nonuniformity in the container.

Thirdly, in the deposition source, in addition to the above-described features, the flow means is constituted by stirring means provided in the vessel. For this reason, since the flow of vapor deposition material in a container is performed by mechanical stirring, vapor deposition material can be reliably circulated in a container.

Fourthly, in the deposition source, the stirring means is characterized by consisting of a magnetic stirrer. For this reason, since stirring of the vapor deposition material in a container is performed by a magnetic stirrer, a magnetic stirrer can be driven remotely from the exterior of a container, and the effective stirring means is effective, without impairing the airtightness of a container. It can be added to an existing deposition source.

Fifthly, in the deposition source, the stirring means is characterized by consisting of axial stirring blades. For this reason, the vapor deposition material in a container can be effectively circulated by the flow action of the vapor deposition material by an axial stirring blade. In particular, by installing the axis of rotation of the axial stirring vane perpendicularly to the center of the vessel, a circulation path for flowing the deposition material of the central portion of the vessel downward and the deposition material of the peripheral portion of the vessel upward can be formed, The thermal nonuniformity in a container can be effectively eliminated in the vapor deposition source which provided the heating means outside.

Sixthly, in the vapor deposition source, the stirring means is composed of a jet-type stirring blade. For this reason, the vapor deposition material in a container can be effectively circulated by the flow action of the vapor deposition material by a flood type stirring blade. In particular, by providing the rotation axis of the agitation-type stirring vane perpendicularly to the center of the vessel, a circulation path for flowing the deposition material of the central portion in the vessel toward the periphery can be formed, so that in a deposition source provided with a heating means outside the vessel, The thermal nonuniformity in a container can be effectively eliminated.

Seventhly, in the deposition source, the stirring means is a multistage wing provided in plural in the longitudinal axis direction. For this reason, since the vapor deposition material of another layer in a container flows directly by the stirring blade provided in multiple stages, circulation of vapor deposition material can be performed more effectively. In addition, it is possible to effectively circulate in the container in the deposition source consisting of the vertically long container.

Eighthly, in the deposition source, the vessel is rotated about a central axis. Because of this, the vapor deposition material in contact with the inner wall surface of the container can be flowed in the rotational direction of the container, so that the vapor deposition material in the container can flow by itself, and in combination with the aforementioned stirring means, the vertical direction by the stirring means. It is possible to add a flow around the axis to the flow of, thereby circulating the deposition material in the container in multiple directions, which allows for more efficient circulation in the container.

Ninthly, in the vapor deposition source, a projection is provided on the inner wall surface of the container along the vertical direction. For this reason, since the vapor deposition material which contacts the inner wall surface of a container can be reliably flown by a projection part, the effect | action by the rotation of the container mentioned above can be heightened further, and the effective circulation in a container is attained.

Tenth, the container is inclined to such an extent that the contained deposition material does not overflow. For this reason, the direction of the flow due to gravity is different with respect to the flow of the deposition material by the above-described stirring means or the flow of the deposition material by the rotation of the container, so that the deposition material can flow in the container more multidimensionally. And effective circulation in the container is possible.

Eleventh, in the vapor deposition apparatus, any one of the above-described vapor deposition sources is provided in a vacuum chamber so as to face the substrate to be deposited. Because of this, thermal unevenness in the container at the evaporation source is eliminated, and even in the case of large evaporation sources, the evaporation can be evaporated in the vacuum chamber without leaving the evaporation material in the container, and the evaporation material also thermally deteriorates in the container. Since there is no vapor deposition material can be used effectively. Further, even when the container (crucible) opening is enlarged in a large deposition source, uniform deposition flow can be generated from the entire opening, so that a uniform thin film can be formed on the substrate. In particular, high-precision deposition can be carried out on a large deposition source for a large-area substrate, and good film formation can be achieved on both sides of work efficiency and work precision.

Twelfth, at least one organic functional layer formed by deposition flows from any one of the above-described deposition sources is provided as an organic EL element. Thirteenth, as a method for manufacturing an organic EL element, forming a lower electrode on a substrate, an organic functional layer having at least a light emitting functional layer on the lower electrode, and forming an upper electrode on the organic functional layer; And the organic functional layer is deposited by vacuum deposition from a deposition source having flow means for flowing the deposition material from the central portion to the peripheral portion in the vessel.

According to these features, the organic functional layer material in the expensive organic EL device can be used without waste, and the film formation accuracy can be improved to improve the device formation yield, thereby reducing the manufacturing cost of the organic EL device. . In particular, in the manufacture of large screen panels, even if the deposition source is enlarged, the precision of film formation and the utilization rate of deposition materials do not decrease, so that large screen panels can be manufactured at low cost and with high accuracy.

Claims (13)

A container comprising the organic compound as a vapor deposition material, containing the vapor deposition material, and heating means for heating the vapor deposition material in the container, and flow means for flowing the vapor deposition material in the container. Vapor deposition source. The deposition source of claim 1, wherein the deposition means flows the deposition material from the central portion to the peripheral portion in the vessel. The vapor deposition source according to claim 1 or 2, wherein the flow means is constituted by stirring means installed in the vessel. The deposition source of claim 3, wherein the stirring means comprises a magnetic stirrer. The vapor deposition source according to claim 3, wherein the stirring means comprises an axial stirring blade. The vapor deposition source according to claim 3, wherein the stirring means is made of a jet-type stirring blade. The vapor deposition source according to claim 3, wherein the stirring means is a multistage blade provided in plural in the longitudinal axis direction. The deposition source of claim 1 or 2, wherein the vessel is rotated about a central axis. The vapor deposition source according to claim 8, wherein protrusions are provided on the inner wall of the container in the vertical direction. The vapor deposition source according to claim 1 or 2, wherein the container is inclined such that the contained vapor deposition material does not overflow. The vapor deposition apparatus of Claim 1 or 2 provided in the vacuum chamber facing the vapor deposition target substrate. An organic EL device comprising at least one organic functional layer formed by deposition flows from a deposition source according to claim 1 or 2. A method of manufacturing an organic EL device, wherein a lower electrode is formed on a substrate, an organic functional layer having at least a light emitting functional layer is formed on the lower electrode, and an upper electrode is formed on the organic functional layer. And the organic functional layer is formed by vacuum deposition from a deposition source having flow means for flowing the deposition material from the central portion to the peripheral portion in the container.