KR20040062966A - Semiconductor component handling device having an electrostatic dissipating film - Google Patents

Abstract

The present invention provides a system for including a thin conductive polymer film 10, such as carbon filled PEEK, in molding processes for devices such as handlers 34, conveyors, carriers, trays 36, and the like used in the semiconductor processing industry; It is about a method. The conductive film 10 of desired size and shape is selectively positioned along the forming surface 26 in the mold cavity 22 to align with the desired target surface of the moldable material 30. The molding process joins the surface of the film 10 to the contact surface of the moldable material 30 such that the film is permanently attached to the moldable material. As a result, compatible conductive polymers can be selectively bonded only to those target surfaces where electrostatic dissipation is desired.

Description

Semiconductor Component Handling Device with Electrostatic Dissipation Film {SEMICONDUCTOR COMPONENT HANDLING DEVICE HAVING AN ELECTROSTATIC DISSIPATING FILM}

Conventional film insert molding techniques are commonly used in manufacturing processes to increase aesthetic appeal in various consumer products. That is, decorative transfers, instructions, logos, and other visual pictures are printed on one surface of a thin transparent polymer film for use in the insert molding process. Subsequent developments have extended the use of the film to permanently anchoring functional features such as barcodes to the product. In both cases, the film is placed into part of the mold prior to injection of the moldable material. This creates a bond between the film and the molded part, so that inexpensive decorations or marks can be selectively positioned on such parts while at the same time simplifying the use of marks at different arrival positions around the complex contours. Similarly, such film insert molding or decorative molding simplifies the manufacturing process by eliminating the need for the markings to be etched or molded into the actual surface of the mold itself. This increases design and manufacturing flexibility and the level of detail that can be included in the final product.

The semiconductor industry has introduced unique and novel purity and pollution prevention requirements into the development and implementation of product design and manufacturing processes. Most importantly, material selection is essential in the manufacture, storage, and transport of devices and assemblies. For example, various polymer materials, such as polyethylene (PE), polycarbonate (PC), perfluoroalkoxy (PFA), polyaceta ketone (PEEK), and the like, are integrated devices and structures for constructing wafer carriers and chip trays. It is generally used for the preparation of.

Wafer carrier

Processing of a wafer disk into an integrated circuit chip often involves several steps in which the disk is repeatedly processed, stored, and transferred. Due to the precise nature of the disk and its high price, it is important that the disk is properly protected through this procedure. One purpose of the wafer carrier is to provide such protection. In addition, since the processing of the wafer disk is usually automated, it is necessary that the disk be precisely positioned relative to the processing equipment for removal and insertion by the robot of the wafer. The second purpose of the wafer carrier is to securely hold the wafer disk during transfer.

The carrier is typically configured to axially arrange the wafer or disk in a shelf or slot and support the wafer or disk by or near its peripheral edge. The wafer or disk may conventionally be removed radially upwards or laterally from the carrier. The carrier may have an additional top cover, bottom cover, or sheath to enclose the wafer or disk. There are several material features that are useful and advantageous for wafer carriers depending on the type of carrier and the particular component of interest of the carrier.

During the processing of semiconductor wafers or magnetic disks, the presence or generation of particles represents a very important contamination problem. Contamination is recognized as the single largest source of yield losses in the semiconductor industry. As the size of integrated circuits continues to decrease, the size of particles that can contaminate integrated circuits also becomes smaller, making minimization of contamination even more important. Contaminants in the form of particles may be generated by abrasion, such as friction or rubbing of the carrier by a wafer or disk, carrier cover or shell, storage rack, other carrier, or processing equipment. Therefore, the most desirable feature of the carrier is resistance to particle generation upon abrasion, friction, or rubbing of the plastic molding material. U. S. Patent No. 5,780, 127 discloses various features of plastics suitable for the suitability of such materials for wafer carriers, which are incorporated herein by reference in their entirety.

Carrier materials can also leave films that make up contaminants that can damage wafers and disks, so volatile components must be minimized. The carrier material should have adequate dimensional stability, ie rigidity, when the carrier is loaded. Dimensional stability is necessary to prevent damage to the wafer or disk and to minimize the movement of the wafer or disk within the carrier. Tolerances of slots holding wafers and disks are typically very small, and any deformation of the carrier directly damages very brittle wafers, or wear and tear as the wafer or disk moves into, from, and within the carriers. May increase the occurrence. Dimensional stability is also very important when the carrier is loaded in a certain direction, such as when the carrier is stacked during shipment or when the carrier is integrated with processing equipment. The carrier material must also maintain its dimensional stability under elevated temperatures that may be encountered during storage or cleaning.

Conventional carriers used in the semiconductor industry can generate and hold electrostatic charges. When charged plastic parts come into contact with electronic devices or processing equipment, they can be discharged with a damage phenomenon known as electrostatic discharge (ESD). In addition, the electrostatically charged carrier can attract and retain particles, especially suspended particles. In addition, static buildup on the carrier can automatically stop the semiconductor processing equipment. As a result, it is most desirable to have the carrier have electrostatic dissipation characteristics to propagate the ESD and avoid the attracting particles.

Visibility of the wafer in a closed container is very desirable and may be required by the end user. Transparent plastics suitable for such containers, such as polycarbonates, are preferred in that such plastics are inexpensive, but such plastics do not have the intrinsic electrostatic dissipation characteristics and desirable wear resistance.

Other important features include the cost of the carrier material and the ease of forming the material. The carrier is typically formed of injection molded plastics such as PC, acrylonitrile butadione styrene (ABS), polypropylene (PP), PE, PFA, PEEK and the like.

One major advantage of specialty polymers such as PEEK is their wear resistance properties. Typical inexpensive conventional plastics release fine particles into the air when they are worn or even rubbed against other materials or objects. Such particles are typically visible to the naked eye, but they introduce potential damaging contaminants that can adhere to the semiconductor components being processed and result in an environmentally controlled environment. However, special thermoplastic polymers are significantly more expensive than conventional polymers. Indeed, various special thermoplastic polymers themselves can be very expensive. In other words, PEEK is more expensive than PC.

In addition to the abrasion resistance feature, the thermoplastic polymer may have additives such as carbon fiber or powder filler added to produce a conductive property. Fillers added to injection molded plastics for electrostatic dissipation include carbon powder or fibers, metal fibers, metal coated graphite, and organic (amine-based) additives. Therefore, thermoplastics with such additives can be used in the material construction of semiconductor component handlers to promote ESD.

Conventional approaches include constructing the entire wafer carrier / handler component from a material such as PEEK or other compatible material to promote ESD. However, as described, the manufacture and use of certain materials are significantly expensive, and it is often undesirable and even impossible to use the materials in the construction of large handler components. In addition, materials such as PEEK can be difficult to manipulate and mold in the manner required to make such semiconductor handlers. Currently, manufacturers of wafer carriers must make a decision between the benefits of the ESD properties of conductive thermoplastics and the cost of manufacturing all or most of the product from the material. While ESD enhancing materials may only be needed for special applications at such contact surfaces of carriers or processing equipment that contact precision semiconductor components, the entire section or portion of the handler typically provides ESD enhancement to avoid electrostatic damage to the components. It consists of a polymer. For example, Japanese Patent Application Laid-Open Nos. 62205616, 8293536, 3012949, 9036216, and 9122273 disclose various means for molding the entire component of a wafer carrier from a thermoplastic having conductive characteristics. , Conductive characteristics are obtained by conductive additives such as carbon fillers and resins. In addition, Japanese Patent Application Laid-open Nos. 1013717 and 62287638 disclose a wafer carrier body having conductive rods or wires extending along the surface of the wafer carrier to provide a ground path. These conventional attempts of ESD are inherently problematic due to manufacturing inefficiencies and costs, respectively. In addition, the adoption of conductive metal objects within the structure of the wafer carrier can introduce contaminants resulting in unacceptable component wear.

As a result, there is a need in the semiconductor industry for fabrication techniques that target and localize conductive materials to substantially reduce unnecessary fabrication processes and provide electrostatic dissipation. Such innovations will significantly reduce the cost of manufacturing and design by allowing the selective use of preferred but often expensive thermoplastics with conductive additives.

The present invention claims priority based on U.S. Provisional Patent Application 60 / 333,686, filed November 27, 2001, entitled "Polymer Film Insert Molding for Providing Electrostatic Dissipation," which is hereby incorporated by reference in its entirety. .

TECHNICAL FIELD The present invention relates to film insert molding, and more particularly to insert molding of thin conductive polymer films during molding of semiconductor component handlers or carriers to provide electrostatic dissipation from semiconductor components.

1 is a side cross-sectional view of a conductive film insert molding system according to an embodiment of the present invention.

FIG. 2 is a side cross-sectional view of a portion of the conductive film insert molding system of FIG. 1.

3 is a side cross-sectional view of a conductive film insert molding system according to an embodiment of the present invention.

4 is a side cross-sectional view of a molded part and bonded conductive film in accordance with one embodiment of the present invention.

5 is a side cross-sectional view of a molded part and bonded conductive film laminate according to one embodiment of the present invention.

6 is a perspective view of a semiconductor wafer handling apparatus according to an embodiment of the present invention.

7 is an exploded perspective view of a semiconductor wafer handling apparatus according to an embodiment of the present invention.

8 is a perspective view of a stackable chip handling apparatus according to an embodiment of the present invention.

9 is a side cross-sectional view of a stackable chip handling apparatus according to an embodiment of the present invention.

The present invention relates to systems and methods for including thin conductive polymer films, such as carbon filled polymers, in molding processes for devices such as handlers, conveyors, carriers, trays, and the like used in the semiconductor processing industry. The conductive film of the desired size and shape is selectively positioned along the forming surface in the mold cavity to align with the desired target surface of the moldable material. The molding process joins the surface of the film to the contact surface of the moldable material such that the film is permanently attached to the moldable material. As a result, compatible conductive polymers can be selectively bonded only to those target surfaces where ESD is required. For example, the semiconductor wafer carrier support structure can include such a conductive polymer film along at least a portion to provide a path for inducing static electricity away from the receivable, fixable wafer. In addition, the ESD film includes a polymer laminate for bonding to semiconductor component handling devices and adds polymer layers with other functional features such as abrasion resistance, heat resistance, absorption barrier protection, chemical resistance, and numerous other performance features. May comprise additional film layers.

It is an object and feature of certain embodiments of the present invention to provide a cost effective method of selectively using the desired polymers and corresponding functional features of the polymers, and it is not necessary to use more polymers than required.

Another object and feature of certain embodiments of the present invention is that the conductive thermoplastic film is coupled to a portion of the wafer carrier, chip tray, or other semiconductor component handler or transferer that contacts sensitive components, devices, or processing equipment to provide ESD. It can be. In addition, the dissipation minimizes the surrounding electrostatic charge that attracts undesirable contaminating particles.

Another object and feature of certain embodiments of the present invention is the selective use of good wear resistant polymer films on components used in the semiconductor industry. Thus, ESD and desirable abrasion resistance functions can be advanced using a single polymer film or film laminate at the target surface.

Another object and feature of certain embodiments of the present invention is to form a semiconductor component handling device having a transparent or translucent polymer film surface area. Such handling devices are formed by using a thin and sufficient layer of material on a selected target surface of the device and by overmolding the structure with or without an intermediate layer in a substantially transparent device body made of a material such as a PC.

Still other objects and features of certain embodiments of the present invention are directed to various components of a semiconductor handling device such that at least one conductive film promotes mating alignment with other components of the same device or with generally stackable mating parts of the same device. It can be insert molded to provide conductive communication along a common ground path.

1 through 9, the present invention includes insert molding of a conductive electrostatic dissipating thermoplastic film 10 to a selected target surface of a semiconductor component handling apparatus 12 using a molding unit 20.

ESD film

At least one conductive or ESD film 10 is a thermoplastic polymer having a measurable level of conductivity. Film 10 is formed at least in part by a limited level of thickness. For example, a single film layer thickness of approximately 0.102 cm (0.040 inch) or less is contemplated. Preferably, the single film layer is approximately 0.0762 cm (0.030 inch) or less. Of course, implementation of multiple layers of laminate will change this good thickness criterion. It should be understood that the term conductivity in this application includes varying levels of conductivity and / or ESD. Typically, the surface resistance, or Ohm per square, defines the conductivity of the material. For the purposes of this application, conductivity will include antistatic, electrostatic dissipation, and conductive features. The acceptable resistance range for the present invention is approximately 1 × 10¹²ohms / square or more, or 1 × 10^-5ohms / square to 1 × 10¹²It can be between ohms / square. This range is exemplary and provides an acceptable range that is understood by those skilled in the art. Any compatible material can be used for the film 10 as long as it has available conductive characteristics. For example, polyester, polyimide (PI), polyimide (PEI), PEEK, perfluoroalkoxy resin (PFA), fluorinated ethylene propylene copolymer (FEP), polyvinylidene fluoride (PVDF ), Polymethyl methacrylate (PMMA), polyether sulfone (PES), polystyrene (PS), polyphenylene sulfide (PPS), and other compatible polymers can be used. One embodiment will include thermoplastic materials with additives such as carbon fiber or powder fillers that are added to create conductive properties to enhance ESD. Such fillers may include carbon powder or fibers, metal fibers, metal coated graphite, organic (amine-based) additives, and the like. Additives that enhance conductive properties for other polymers and thermoplastics are also known to those skilled in the art and can be used without departing from the spirit or scope of the invention. As described herein, the ESD function of the film 10 can be used to provide a ground path and remove charges from related semiconductor components to reduce the aspiration of particles and other contaminants. Co-pending U.S. Patent Application No. The reference is hereby incorporated by reference in its entirety.

In order to employ the conductive film 10 in the manufacture of the semiconductor component handling apparatus 12, the film 10 is typically cut into desired shapes and sizes according to the particular needs of the bonding device. After cutting, the film 10 may be thermoformed. The film 10 is typically thin in sheet form to make the moldability easier and to take advantage of the transparent or translucent characteristics of the material.

In addition to insert molding a single conductive film 10, the plurality of films 10 may be laminated to include a composite film structure for formably bonding to the semiconductor component handling device 12. For example, various film layers can include different conductive strengths. In one embodiment, the layer of film laminate that binds to the surface of the handler 12 may have greater conductivity than the outer layer to increase the effectiveness of the conduction path and minimize potential damage from electrostatic charge. Yet another embodiment adds another film layer to the conductive film to add abrasion resistance, chemical resistance, temperature resistance, absorption barrier, gas exhaust barrier, and the like to a portion or surface of the handling device 12 that moldably houses the film laminate. It can be combined with (10). Numerous film laminating techniques known to those skilled in the art are contemplated for use in the present invention. For example, US Pat. Nos. 3,660,200, 4,605,591, 5,194,327, 5,344,703, and 5,811,197 disclose thermoplastic plastic laminating techniques and are incorporated herein by reference in their entirety.

ESD film insert molding

Referring first to FIGS. 1-7, the forming unit 20 typically includes a mold cavity 22, a cover portion 24, and at least one injection channel portion 28. At least one injection channel 28 is in fluid communication with the mold cavity 22. The mold cavity 22 can include a molding surface 26 designed to form the moldable material 30 and / or the film 10 injected during the molding process. Cover portion 24 selectively engages or covers mold cavity 22. Various embodiments of forming unit 20 introduce vacuum suction when securing an object, such as film 10, and at least one vacuum channel 29 in communication with mold cavity 22. It may further comprise a molding surface 26 for the purpose. Other known techniques for reliably mating the film 10 within the cavity 22 and forming surface 26 by employing stationary fixation and forced engagement are also contemplated for use in the present invention. It should be understood that the various figures show the film 10 disproportionately larger than corresponding handling devices for illustrative purposes only, but do not represent actual proportions for the present invention.

In one embodiment, lid portion 24 may be removably secured to mold cavity 22 to facilitate insertion of film 10 and removal of the finished handling device portion or component 32. The molded part 32 is typically smaller than the complete handling device 12. For example, sidewall inserts and shelves of wafer carriers are typically molded separately and often molded from other plastics relative to the body of the carrier. Various injection and insert molding techniques are generally known to those skilled in the art and may be practiced without departing from the spirit or scope of the invention.

Moldable material 30 is preferably a generally nonconductive thermoplastic material commonly used in molded parts used in the semiconductor processing industry. Again, material 30 may be PFA, PE, PC, or the like. In particular, the moldable material 30 may be a material conventionally used to construct wafer carriers, chip trays, and components and components thereof.

In operation, the conductive film 10 is typically cut into desired shapes and then thermoformed into the required shapes. Thermoformed film 10 is positioned into molding unit 20 such that film 10 is in surface contact with at least a portion of at least one molding surface 26 of mold cavity 22. As indicated herein, various techniques, such as vacuum, electrostatic, and forced fixation, may be practiced to facilitate proper placement of the film 10 relative to the cavity 22 or the molding surface 26. The lid portion 24 can then be closed in preparation for injection of the material 30. At this stage of the process, the moldable material 30 is injected into the cavity through the at least one injection channel 28 in a molten state. After waiting for an appropriate cooling period, the moldable material 30 in the forming unit 20 is cooled to form a generally solidified molded part 32. Melt injection in combination with the cooling process forms a permanent adhesive bond between the at least one film 10 and the molded part 32.

After completion of the molding process, the molded part 32 can be ejected from the molding unit 32, which has the conductive film 10 permanently bonded to the optional target surface. Conventional processing, techniques, and methods known to those skilled in the art can be used to inject the material 30 and to eject the part 32.

Wafer Handler / Carrier

Various conventional wafer handlers 34 and apparatus 34 components or parts are shown in FIGS. 4-7. The conductive film 10 or film laminate may be bonded to optional components and / or portions of the wafer handling apparatus 34 (ie wafer carrier) by the film insert molding process described herein. Wafer handler 34 is typically formed from at least two different melt processable materials. As a result, once a portion 32 of the wafer handler 34 is injection molded as described, it is often in the second mold cavity for later molding by another molded portion or wafer handler 34 component. It is necessary to position the part 32. This is another reason why it is necessary to have a film 10 made of durable polymer plastic. The shear force of the molding process and repeated exposure to high temperatures require the use of good thermopolymers. Applicant's co-pending US patent application Ser. No. 09 / 317,989 discloses the use of overmolding to manufacture a wafer carrier, which is incorporated herein by reference in its entirety. In addition, US Pat. No. 6,439,984 discloses molding techniques for wafer carriers, and is also incorporated herein by reference in its entirety.

U.S. Pat.Nos. 6,428,729, 6,039,186, 5,485,094, and 5,944,194 disclose special configurations and processes for constructing the wafer handling apparatus 34, which are incorporated herein by reference in their entirety. In one embodiment, wafer carrier 34 includes at least one body portion 38 and a plurality of axial support shelves 42 capable of receivably supporting the wafer or disk by or near its peripheral edge. It includes a support structure 40 having. The wafer or disk may conventionally be removed radially upwards or laterally from the carrier 34 on the shelf 42. The shelf 42 is used as the main point of contact between the wafer and the carrier 34. As a result, embodiments of the present invention include insert molding ESD film 10 to at least a portion of such support structure 40 and / or support shelf 42. The ESD film 10 is optionally positioned within the mold cavity 22 of the molding unit 20 to cover the entire surface or side of the molded part, the molded part 32 being the support 40, the support shelf ( 42), a limited predetermined portion of the shelf 42, or various other combinations. In addition, the film 10 is in particular a ground path such as the corresponding film 10 on the body or any other adjacent abutment of the wafer handler 23 to provide a ground path that extends along the wafer handler 34. Combined to align with elements. By advancing a selectively bondable arrangement of the film 10 to any surface or component surface of the wafer handler 34, the contacting handler 34 components form each of the contactable components throughout the conductive material. ESD can be communicated without employing conventional techniques.

In another embodiment of the present invention, wafer carrier 34 includes flange 44 (FIG. 6) along the outside of handler body 38 to facilitate transportation, including engagement by robotic equipment during semiconductor processing. Will include. This flange 44 may similarly include a conductive film 10 insert molded to provide ESD benefits. Thus, the remainder and surface of the body 38 is composed of a nonconductive polymer. 6 also shows various overmolded passageways for grounding components of handling device 34 that may be brought into contact with the optional placement of at least one conductive film 10, so that the combined conductive communication is overmolded and It is possible between the insert molded film and the part. Another embodiment may include a film 10 formed on a selected surface of the dynamic coupling structure 46, the dynamic coupling structure 46 (FIG. 7) being handled as described in US Pat. No. 6,010,008. It is intended to facilitate equipment engagement with the device 34.

In some cases, the insert molded conductive film 10 may not be sufficiently attached to other polymers. For example, PEEK (ie film 10) does not attach to overmolded PC (ie wafer handler 34 components such as body 38) in all cases. Referring to Figure 5, it was found that an intermediate film or binding layer, such as PEI, was attached to the PEEK and PC materials. Thus, the film laminate 10 of at least two polymer films can be inserted separately into the mold as a laminate before injecting the PC material, with the intermediate film positioned between the film 10 and the melt moldable PC material 30. do. Alternatively, the two films may be attached to each other by vacuum forming and the laminating process described herein or by means of combining the two layers or films prior to insertion and placement into the molding unit 20. Other materials may be used to enhance the attachment and applicable molding process.

By such selective bonding of the at least one conductive film 10, surface to ground communication can be established to induce electrostatic charge away from sensitive components or equipment. For example, at this point of contact, conductive ESD film 10 will provide continuous conductive ground communication, whereby any charge will be induced away from the sensitive semiconductor component or device to minimize costly damage. The use of this film 10 on a limited target location on the part 32 (ie, the shelf in the carrier) allows the end user to take full advantage of ESD and at the same time configure the rest of the part or the entire part body with other good polymers. Can be. Desired or even required film 10 material is required in the construction of the remainder of the wafer carrier 34 or the particular component 32.

Chip Handler / Tray

In another embodiment, the handling device 12 includes a plurality of chips and a plurality of seating recesses or recess assemblies 50 adapted to secure the peripheral side walls 52 as shown in FIGS. 8 and 9. The chip tray 36 is included. US Pat. Nos. 5,484,062 and 6,079,565 disclose such chip trays and are incorporated herein by reference in their entirety. As with the process and materials described herein for the wafer handler 34, it is beneficial to provide an ESD path that induces electrostatic charge away from the receivable chip and / or processing equipment. Prior art typically molds the entire chip tray 36 from a polymer having conductive characteristics. As explained, this conventional technique is expensive, inefficient and often undesirable.

One embodiment of the invention involves inserting conductive film 10 into selected portions or surfaces of chip tray 36, such as mounting recess 50, so that electrostatic charge is induced away from the seated chip. Another embodiment may include insert molding the film 10 to the entire top surface of the tray 36, including the recess 50, the sidewalls 52, and a combination thereof.

The peripheral sidewall of the chip tray 36 is usually shaped to engage in stacking engagement with another chip tray 36. Laminated pillars / members and / or peripheral wall ledges on the bottom portion of the tray 36 may be sized and shaped to align with corresponding grooves or lips on the top surface of the tray 36. Other lamination techniques and tray designs known to those skilled in the art are also contemplated to be practiced with the present invention. To provide a conductive ground path, the film 10 may be molded along the area from the seating recess 50 to the peripheral sidewall 52 to provide conductive communication along the plurality of stacked trays 36.

As with the wafer handler 34, the selective bonding of the at least one conductive film 10 to the selected target surface of the chip tray 36 favors ESD benefits and allows the manufacturer to provide the desired vision for the rest of the tray. Allowing to consist of a conductive polymer.

The invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it is therefore desirable that the present embodiments be considered in all respects as illustrative and not restrictive.

Claims (43)

Semiconductor wafer handling equipment, At least one non-conductive, generally rigid, thermoplastic component structure constituting a part of the wafer handling apparatus; At least one thin conductive thermoplastic film bonded to a portion of the at least one nonconductive thermoplastic component structure by an insert molding process to provide electrostatic dissipation characteristics to the semiconductor wafer handling apparatus. The device of claim 1, wherein the at least one thin conductive thermoplastic film comprises an additive to enhance conductivity. The device of claim 2, wherein the conductive additive is selected from the group consisting of carbon powder, carbon fiber, metal fiber, metal coated graphite, and organic amine based additives. The method of claim 1, wherein the second thin conductive film is separated from but in contact with the at least one thin conductive film by an insert molding process to provide a conductive path from the at least one thin conductive film to the second conductive film. And coupled to the second wafer handling device component. The apparatus of claim 1, wherein the at least one thin conductive film is a film laminate having at least two film layers such that at least one of the at least two film layers is a conductive film. The device of claim 5, wherein at least two film layers each have a different level of conductivity that is measurable. 6. The apparatus of claim 5, wherein at least one of the at least two film layers comprises a film having a performance characteristic selected from the group consisting of abrasion resistance, chemical resistance, thermal resistance, fluid absorption barrier characteristics, and gas exhaust barrier characteristics. 6. The apparatus of claim 5, wherein at least one of the at least two film layers is an intermediate binder layer to improve the bond strength between the thin conductive film and the nonconductive thermoplastic component structure. The apparatus of claim 1, wherein the at least one nonconductive thermoplastic component structure is a support structure having a plurality of spaced support shelves adapted to receive a semiconductor wafer. The apparatus of claim 1, wherein the at least one nonconductive thermoplastic component structure is a dynamic coupling adapted to be in mechanical communication with semiconductor processing equipment. The apparatus of claim 1, wherein the at least one nonconductive thermoplastic component structure is a handling flange adapted to be selectively engageable by a robotic device. The apparatus of claim 1, wherein the at least one nonconductive thermoplastic component structure is a body shell portion of a wafer handling apparatus. The device of claim 1, wherein the at least one thin conductive film is generally translucent. The method of claim 1, wherein the at least one thin conductive film is generally selected from polyester, polyimide, polyimide, polythertherketone, perfluoroalkoxy resin, fluorinated ethylene propylene copolymer, polyvinylidene fluoride, A device consisting of a material selected from the group consisting of polymethyl methacrylate, polyther sulfone, polystyrene, and polyphenylene sulfide. The device of claim 1, wherein the at least one thin conductive film is comprised substantially of a polytherserketone. Semiconductor wafer handling equipment, A first generally rigid thermoplastic portion having no conductive characteristics, At least one thin thermoplastic conductive film bonded to at least a portion of the first thermoplastic component by a film insert molding process, The thin thermoplastic conductive film provides a conductive ground path away from the first thermoplastic portion. 17. The apparatus of claim 16, wherein the first thermoplastic portion is part of a semiconductor wafer handling apparatus, the wafer handling apparatus comprising a body shell and a wafer support structure for receiving the semiconductor wafer. 18. The apparatus of claim 17, wherein the at least one thin thermoplastic conductive film is bonded to at least a portion of the wafer support structure to dissipate electrostatic charge away from the contained semiconductor wafer. 17. The apparatus of claim 16, wherein the first thermoplastic portion is part of a semiconductor chip handling tray, the tray comprising a plurality of recesses adapted to receive the semiconductor chip and a plurality of peripheral sidewall sections. 20. The apparatus of claim 19, wherein at least one of the peripheral sidewall sections is adapted for mating stackable engagement with a separate semiconductor chip handling apparatus. 21. The apparatus of claim 20, wherein the at least one thin conductive film is coupled to at least one of the plurality of recesses and peripheral sidewall sections to provide a conductive path for dissipating electrostatic charge away from the contained semiconductor chip. The device of claim 16, wherein the at least one thin conductive film is generally translucent. 17. The method of claim 16, wherein the at least one thin conductive film is generally polyester, polyimide, polyether imide, polythertherketone, perfluoroalkoxy resin, fluorinated ethylene propylene copolymer, polyvinylidene fluoride, A device consisting of a material selected from the group consisting of polymethyl methacrylate, polyther sulfone, polystyrene, and polyphenylene sulfide. 17. The apparatus of claim 16, wherein the at least one thin conductive film is comprised substantially of a polytherserketone. A method of film insert molding an electrostatic dissipating component of a semiconductor component handling device through melt bonding of at least one thin conductive thermoplastic film to at least a portion of a nonconductive thermoplastic material, Forming at least one thin conductive thermoplastic film, Accessing a forming unit having a mold cavity comprising at least one forming surface; Positioning at least one formed thin conductive thermoplastic film in a cavity of the forming unit along at least a portion of the at least one forming surface, Injecting the generally non-conductive, molten thermoplastic material into the cavity of the molding unit to match the shape of the at least one molding surface; Waiting for a cooling period in which the non-conductive thermoplastic material is generally solidified and mated with the at least one thin conductive thermoplastic film to produce an electrostatic dissipation component having a ground path capability formed by the at least one thin conductive thermoplastic film; , Discharging the static dissipation component from the molding unit. 27. The method of claim 25, wherein molding the electrostatic dissipation component forms a component of a semiconductor wafer handling apparatus. 27. The apparatus of claim 26, wherein the shaping of the electrostatic dissipation component forms a support structure of the semiconductor wafer handling apparatus, the support structure having a plurality of spaced support shelves, wherein the at least one thin conductive thermoplastic film is part of spaced support shelves. How to be coupled to. 27. The method of claim 25, wherein forming the electrostatic dissipation component forms a component of a semiconductor chip handling tray having a plurality of chip receiving recesses, and at least one thin conductive thermoplastic film forms at least a plurality of chip receiving recesses. Method of bonding to one surface. The at least one thin conductive thermoplastic film of claim 28, wherein the at least one thin conductive thermoplastic film forms at least one chip receiving recess to facilitate conductive communication between at least one thin conductive thermoplastic film of each of the plurality of stackable semiconductor chip handling trays. A method coupled to at least one of a surface and a plurality of sidewall sections of a semiconductor chip handling tray. 27. The method of claim 25, wherein forming at least one thin conductive thermoplastic film comprises forming a multilayer film laminate, wherein at least one of the film layers is a conductive thermoplastic film. 31. The method of claim 30, wherein the multilayer film laminate comprises at least two film layers, wherein the first of the at least two film layers has a different measurable conductivity level than the second of the at least two film layers. 26. The method of claim 25, wherein forming at least one thin conductive thermoplastic film comprises forming at least one generally translucent thin conductive thermoplastic film. 27. The method of claim 25, wherein forming at least one thin conductive thermoplastic film comprises at least one thin conductive thermoplastic film, generally polyester, polyimide, polyether imide, polythertherketone, perfluoroalkoxy resin, fluorine. Forming a material selected from the group consisting of lined ethylene propylene copolymer, polyvinylidene fluoride, polymethyl methacrylate, polyether sulfone, polystyrene, and polyphenylene sulfide. 27. The method of claim 25, wherein forming at least one thin conductive thermoplastic film comprises forming at least one thin conductive thermoplastic film that is generally comprised of polythertherketone. It is a semiconductor chip handling tray, A plurality of recess portions capable of receiving semiconductor components, An outer peripheral wall portion adapted to promote stacking with another semiconductor chip handling tray, A chip handling tray comprising at least one thin conductive thermoplastic film bonded to at least a plurality of recessed portions and at least a portion of an outer peripheral wall portion by an insert molding process to provide a conductive ground path away from the receivable semiconductor chip. 36. The portion of claim 35, wherein the portion of the at least one thin conductive thermoplastic film formed on at least a portion of the outer peripheral wall portion of the chip handling tray is conductive to a second stackable receivable chip handling tray to dissipate electrostatic charge. Chip handling tray providing communication. 36. The chip handling tray of claim 35, wherein the at least one thin conductive thermoplastic film is generally translucent. 36. The method of claim 35, wherein the at least one thin conductive thermoplastic film is generally polyester, polyimide, polyimide, polythertherketone, perfluoroalkoxy resin, fluorinated ethylene propylene copolymer, polyvinylidene fluoride And a chip handling tray composed of a material selected from the group consisting of polymethyl methacrylate, polyther sulfone, polystyrene, and polyphenylene sulfide. 36. The chip handling tray of claim 35, wherein the at least one thin conductive thermoplastic film is comprised substantially of polythertherketone. A conductive film insert molding system for molding at least a portion of a semiconductor component handling device having at least one conductive film, A large amount of generally molten nonconductive polymer material for forming at least a portion of the semiconductor handling device, A molding unit having a molding cavity and at least one molding surface adapted to receive a large amount of generally molten nonconductive polymer material; A system comprising at least one thin conductive film that can be inserted into a molding cavity along at least a portion of at least one molding surface to permanently bond to a large amount of generally melted nonconductive polymeric material during the molding process. The system of claim 40, wherein the at least one thin conductive film is generally translucent. 41. The method of claim 40, wherein the at least one thin conductive film is generally polyester, polyimide, polyether imide, polythertherketone, perfluoroalkoxy resin, fluorinated ethylene propylene copolymer, polyvinylidene fluoride, A system consisting of a material selected from the group consisting of polymethyl methacrylate, polyther sulfone, polystyrene, and polyphenylene sulfide. 41. The system of claim 40, wherein the at least one thin conductive film is generally comprised of polyacer ketones.