KR20040059870A - Nitrogen gas circulation system of a vertical furnace - Google Patents
Nitrogen gas circulation system of a vertical furnace Download PDFInfo
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- KR20040059870A KR20040059870A KR1020020086375A KR20020086375A KR20040059870A KR 20040059870 A KR20040059870 A KR 20040059870A KR 1020020086375 A KR1020020086375 A KR 1020020086375A KR 20020086375 A KR20020086375 A KR 20020086375A KR 20040059870 A KR20040059870 A KR 20040059870A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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Abstract
Description
본 발명은 수직형 확산로의 질소가스 순환 시스템에 관한 것으로서, 보다 상세하게는 프로세스 챔버내에서 배기를 위해 이동하는 질소가스의 흐름에 의해 파티클이 상승하여 웨이퍼측으로 이동하는 것을 억제하도록 질소가스를 공급함으로써 웨이퍼에 파티클이 부착되는 것을 방지하는 수직형 확산로의 질소가스 순환 시스템에 관한 것이다.The present invention relates to a nitrogen gas circulation system of a vertical diffusion furnace, and more particularly, to supply nitrogen gas to suppress particles from rising to the wafer side by a flow of nitrogen gas moving for exhaust in a process chamber. The present invention relates to a nitrogen gas circulation system in a vertical diffusion path that prevents particles from adhering to a wafer.
일반적으로, 반도체 소자를 제조하기 위한 공정에서 웨이퍼의 표면에 분자기체를 반응시켜서 필요한 박막을 형성하는 공정을 화학기상증착(Chemical Vapor Deposition; 이하 "CVD"라 한다) 공정이라 하며, CVD 공정에 사용되는 확산로는 튜브(tube)가 설치되는 형상에 따라 수직형 확산로(vertical type furnace)와 수평형 확산로(horizontal type furnace)로 나뉜다.In general, a process for forming a thin film by reacting a molecular gas on the surface of a wafer in a process for manufacturing a semiconductor device is called a chemical vapor deposition (hereinafter referred to as "CVD") process, used in the CVD process The diffusion furnace is divided into a vertical type furnace (horizontal type furnace) and a horizontal type furnace (horizontal type furnace) according to the shape of the tube (tube) is installed.
한편, 수직형 확산로는 도어 등에서 100%의 씰링(sealing)이 이루어지지 않기 때문에 장비내부에 질소(N2)가스의 농도를 일정하게 유지하기 위해 질소(N2)가스를 일측으로부터 유입하여 순환시킨다.On the other hand, since the vertical diffusion path is not 100% sealed in the door, etc., nitrogen (N 2 ) gas is introduced from one side to maintain a constant concentration of nitrogen (N 2 ) gas in the equipment. Let's do it.
종래의 수직형 확산로의 질소가스 순환 시스템을 첨부된 도면을 이용하여 설명하면 다음과 같다.The nitrogen gas circulation system of the conventional vertical diffusion furnace will be described with reference to the accompanying drawings.
도 1은 종래의 수직형 확산로의 질소가스 순환 시스템을 도시한 단면도이다. 도시된 바와 같이, 종래의 수직형 확산로의 질소가스 순환 시스템은 프로세스 챔버(1)의 일측으로부터 타측까지 가스순환라인(2)이 연결되고, 가스순환라인(2)상에 송풍팬(3)이 설치되며, 가스순환라인(2) 각각의 끝단이 위치하는 프로세스 챔버(1)의 내부 양측면에 헤파필터(HEPA filter; 4)가 각각 설치되고, 프로세스 챔버(1)내에 위치하는 탑 햇(top hat; 1a)에 외부로 통하는 가스배기라인(5)이 연결된다.1 is a cross-sectional view showing a nitrogen gas circulation system of a conventional vertical diffusion furnace. As shown, the nitrogen gas circulation system of the conventional vertical diffusion furnace is connected to the gas circulation line 2 from one side to the other side of the process chamber 1, the blowing fan 3 on the gas circulation line (2) Is installed, HEPA filter (4) is respectively installed on both sides of the interior of the process chamber (1) where the end of each of the gas circulation line (2), the top hat (top) located in the process chamber (1) The gas exhaust line 5 to the outside connected to the hat 1a is connected.
프로세스 챔버(1)는 내측에 일정 개수의 웨이퍼(미도시)를 장착한 보트(1b)가 승강기(1c)에 의해 승강되도록 위치하며, 웨이퍼(미도시)를 로딩/언로딩하기 위해 정지된 보트(1b)의 상측에는 보트(1b)의 상부를 보호하기 위한 탑 햇(1a)이 설치된다.The process chamber 1 is positioned such that the boat 1b having a certain number of wafers (not shown) inside thereof is lifted by the elevator 1c, and the boat is stopped to load / unload wafers (not shown). The top hat 1a for protecting the upper part of the boat 1b is provided in the upper side of the 1b.
프로세스 챔버(1) 내의 질소(N2)가스는 송풍팬(3)의 이송력에 의해 프로세스 챔버(1)의 일측으로부터 타측으로 이동되어 가스순환라인(2)을 통해 순환된다.Nitrogen (N 2 ) gas in the process chamber 1 is moved from one side of the process chamber 1 to the other side by the transfer force of the blowing fan 3 and circulated through the gas circulation line 2.
가스순환라인(2)을 통해 프로세스 챔버(1)내를 순환하는 질소(N2)가스가 헤파필터(4)를 통과함으로써 질소(N2)가스에 포함된 파티클(particle)은 헤파필터(4)에 의해 필터링된다.Nitrogen (N 2 ) gas circulating in the process chamber 1 through the gas circulation line 2 passes through the hepa filter 4, and particles contained in the nitrogen (N 2 ) gas are hepa filter 4. Is filtered by).
프로세스 챔버(1)내의 질소(N2)가스 일부는 탑 햇(1a)에 연결된 가스배기라인(5)을 통해 배기된다.Part of the nitrogen (N 2 ) gas in the process chamber 1 is exhausted through the gas exhaust line 5 connected to the top hat 1a.
그러나, 이와 같은 종래의 수직형 확산로의 질소가스 순환 시스템은, 탑 햇(1a)에 연결된 가스배기라인(5)을 통해 배기되는 질소(N2)가스의 이동으로 인해 프로세스 챔버(1) 바닥에 위치하는 파티클이 부유하여 가스배기라인(5)이 연결된 탑 햇(1a)쪽으로 상승하게 된다.However, such a conventional nitrogen gas circulation system of a vertical diffusion furnace has a bottom of the process chamber 1 due to the movement of nitrogen (N 2 ) gas exhausted through the gas exhaust line 5 connected to the top hat 1a. Particles located in the floating is to rise toward the top hat (1a) connected to the gas exhaust line (5).
따라서, 프로세스 챔버(1)의 바닥으로부터 탑 햇(1a)쪽으로 상승하는 파티클이 보트(1b)에 장착되거나 로딩/언로딩되는 웨이퍼(미도시)에 부착됨으로써 웨이퍼(미도시)의 수율을 현저하게 저하시키는 문제점을 가지고 있었다.Accordingly, the particles rising from the bottom of the process chamber 1 toward the top hat 1a are attached to the wafer (not shown) mounted on the boat 1b or loaded / unloaded to significantly increase the yield of the wafer (not shown). It had a problem of degrading.
본 발명은 상술한 종래의 문제점을 해결하기 위한 것으로서, 본 발명의 목적은 프로세스 챔버내에서 배기를 위해 이동하는 질소가스의 흐름에 의해 파티클이 상승하여 웨이퍼측으로 이동하는 것을 억제하도록 질소가스를 공급함으로써 웨이퍼에 파티클이 부착되는 것을 방지하여 웨이퍼의 수율을 향상시키는 수직형 확산로의 질소가스 순환 시스템을 제공하는데 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to supply nitrogen gas to suppress particles from rising and moving to the wafer side by the flow of nitrogen gas moving for exhaust in the process chamber. The present invention provides a nitrogen gas circulation system in a vertical diffusion path that prevents particles from adhering to a wafer to improve the yield of the wafer.
이와 같은 목적을 실현하기 위한 본 발명은, 프로세스 챔버의 일측으로부터 타측에 질소가스가 이동하는 경로를 제공하는 가스순환라인이 연결되고, 가스순환라인상에 질소가스의 이송력을 제공하는 송풍팬이 설치되며, 가스순환라인 각각의 끝단이 위치하는 프로세스 챔버의 내부 양측면에 질소가스를 필터링하는 헤파필터가 각각 설치되고, 프로세스 챔버내에 설치되는 탑 햇에 외부로 질소가스를 배출하는 가스배기라인이 연결되는 수직형 확산로의 질소가스 순환 시스템에 있어서, 탑 햇의 일측에 내측으로 질소가스를 공급하는 가스공급라인이 연결되며, 탑 햇 내측에서 가스공급라인과 연결되는 부위에 내측으로 공급되는 질소가스를 필터링하는 헤파필터가 설치되는 것을 특징으로 한다.The present invention for realizing the above object is connected to the gas circulation line providing a path for moving the nitrogen gas from one side of the process chamber to the other side, and a blower fan for providing a transfer force of nitrogen gas on the gas circulation line Hepa filters for filtering nitrogen gas are installed on both sides of the inside of the process chamber where each end of each gas circulation line is installed, and a gas exhaust line for discharging nitrogen gas to the top hat installed in the process chamber is connected to the outside. In the nitrogen gas circulation system of the vertical diffusion furnace is a gas supply line for supplying nitrogen gas inward to one side of the top hat, the nitrogen gas supplied inward to the portion connected to the gas supply line inside the top hat Characterized in that the HEPA filter is installed to filter.
도 1은 종래의 수직형 확산로의 질소가스 순환 시스템을 도시한 단면도이고,1 is a cross-sectional view showing a nitrogen gas circulation system of a conventional vertical diffusion furnace,
도 2는 본 발명에 따른 수직형 확산로의 질소가스 순환 시스템을 도시한 단면도이다.2 is a cross-sectional view showing a nitrogen gas circulation system of a vertical diffusion furnace according to the present invention.
< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>
11 ; 가스순환라인 12 ; 송풍팬11; Gas circulation line 12; Blower fan
13, 16 ; 헤파필터 14 ; 가스배기라인13, 16; HEPA filter 14; Gas exhaust line
15 ; 가스공급라인 15a ; 개폐밸브15; Gas supply line 15a; Valve
15b ; 가스공급부15b; Gas supply
이하, 본 발명의 가장 바람직한 실시예를 첨부한 도면을 참조하여 본 발명의 기술분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 더욱 상세히 설명하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.
도 2는 본 발명에 따른 수직형 확산로의 질소가스 순환 시스템을 도시한 단면도이다. 도시된 바와 같이, 본 발명에 따른 수직형 확산로의 질소가스 순환 시스템(10)은 프로세스 챔버(1)의 일측으로부터 타측에 가스순환라인(11)이 연결되고, 가스순환라인(11)상에 송풍팬(12)이 설치되며, 가스순환라인(11) 각각의 끝단이 위치하는 프로세스 챔버(1)의 내부 양측면에 헤파필터(HEPA filter;13)가 각각 설치되고, 프로세스 챔버(1)내에 설치되는 탑 햇(1a)에 가스배기라인(14)과 가스공급라인(15)이 각각 연결되며, 탑 햇(1a) 내측에 헤파필터(16)가 설치된다.2 is a cross-sectional view showing a nitrogen gas circulation system of a vertical diffusion furnace according to the present invention. As shown, the nitrogen gas circulation system 10 of the vertical diffusion furnace according to the present invention is connected to the gas circulation line 11 from one side to the other side of the process chamber 1, on the gas circulation line 11 A blower fan 12 is installed, HEPA filters 13 are installed on both sides of the inside of the process chamber 1 where the ends of the gas circulation lines 11 are located, respectively, and are installed in the process chamber 1. The gas exhaust line 14 and the gas supply line 15 are respectively connected to the top hat 1a, and the HEPA filter 16 is installed inside the top hat 1a.
가스순환라인(11)은 프로세스 챔버(1)의 일측으로부터 그 반대측인 타측에 서로 연결되어 질소(N2)가스가 이동하는 경로를 제공하며, 도중에 송풍팬(12)이 설치된다.The gas circulation line 11 is connected to each other from one side of the process chamber 1 to the other side thereof to provide a path through which nitrogen (N 2 ) gas moves, and a blowing fan 12 is installed on the way.
송풍팬(12)은 가스순환라인(11)을 따라 순환하는 질소(N2)가스에 이송력을 제공한다.The blowing fan 12 provides a transfer force to nitrogen (N 2 ) gas circulating along the gas circulation line 11.
헤파필터(13)는 프로세스 챔버(1)로부터 가스순환라인(11)으로 진입하는 질소(N2)가스 및 가스순환라인(11)으로부터 프로세스 챔버(1)로 공급되는 질소(N2)가스를 필터링함으로써 순환하는 질소(N2)가스에 포함된 파티클(particle)을 제거한다.The HEPA filter 13 is nitrogen (N 2 ) gas entering the gas circulation line 11 from the process chamber 1 and nitrogen (N 2 ) gas supplied from the gas circulation line 11 to the process chamber 1. Filtering removes particles contained in circulating nitrogen (N 2 ) gas.
가스배기라인(14)은 프로세스 챔버(1)내에서 웨이퍼(미도시)를 로딩/언로딩하기 위해 정지된 보트(1b)의 상측에 보트(1b)의 상부를 보호하기 위해 설치되는 탑 햇(1a)에 연결되어 탑 햇(1a) 내측으로부터 프로세스 튜브(1) 외측으로 질소(N2)가스를 배출한다.The gas exhaust line 14 is a top hat installed to protect the upper portion of the boat 1b above the stationary boat 1b for loading / unloading wafers (not shown) in the process chamber 1. It is connected to 1a) to discharge nitrogen (N 2 ) gas from the inside of the top hat 1a to the outside of the process tube 1.
가스공급라인(15)은 탑 햇(1a) 일측에 내측으로 질소(N2)가스를 공급하도록 연결되며, 개폐밸브(15a)의 개방에 의해 가스공급부(15b)로부터 질소(N2)가스를 공급받는다. 따라서, 가스공급라인(15)을 통해 탑 햇(1a) 내측으로 질소(N2)가스를 공급함으로써 탑 햇(1a)을 통해 가스배기라인(14)으로부터 배출되는 질소(N2)가스에 의해 프로세스 챔버(1)의 바닥에 존재하는 파티클이 탑 햇(1a)으로 상승하는 것을 억제한다.The gas supply line 15 is connected to supply nitrogen (N 2 ) gas to one side of the top hat 1a inward, and opens the nitrogen (N 2 ) gas from the gas supply unit 15b by opening the shutoff valve 15a. To be supplied. Therefore, by the nitrogen (N 2) gases discharged from the gas exhaust line 14 through the top-hat (1a) inside a nitrogen (N 2) by the top-hat (1a) supplying a gas through a gas supply line 15 The particles present at the bottom of the process chamber 1 are suppressed from rising to the top hat 1a.
탑 햇(1a) 내측에서 가스공급라인(15)과 연결되는 부위에는 가스공급라인(15)으로부터 내측으로 공급되는 질소(N2)가스를 필터링하는 헤파필터(16)가 설치된다. 따라서, 헤파필터(16)에 의해 가스공급라인(15)으로부터 내측으로 공급되는 질소(N2)가스에 포함된 파티클을 제거한다.A hepa filter 16 for filtering nitrogen (N 2 ) gas supplied inward from the gas supply line 15 is installed at a portion connected to the gas supply line 15 inside the top hat 1a. Therefore, the particles contained in the nitrogen (N 2 ) gas supplied inward from the gas supply line 15 by the hepa filter 16 are removed.
이와 같은 구조로 이루어진 수직형 확산로의 질소가스 순환 시스템의 동작은 다음과 같이 이루어진다.The operation of the nitrogen gas circulation system of the vertical diffusion furnace having such a structure is performed as follows.
가스순환라인(11)을 통해 프로세스 챔버(1)내를 순환하는 질소(N2)가스가 프로세스 챔버(1)내의 양측면에 설치된 헤파필터(13)를 통과함으로써 질소(N2)가스에 포함된 파티클(particle)은 헤파필터(13)에 의해 필터링된다.Nitrogen (N 2 ) gas circulating in the process chamber 1 through the gas circulation line 11 passes through the HEPA filter 13 installed on both sides of the process chamber 1 to be included in the nitrogen (N 2 ) gas. Particles are filtered by the HEPA filter 13.
프로세스 챔버(1)내의 질소(N2)가스중 일부는 탑 햇(1a)에 연결된 가스배기라인(14)을 통해 배기된다.Some of the nitrogen (N 2 ) gas in the process chamber 1 is exhausted through the gas exhaust line 14 connected to the top hat 1a.
가스공급라인(15)은 개폐밸브(15a)의 개방에 의해 가스공급부(15b)로부터 공급되는 질소(N2)가스를 탑 햇(1a) 내측으로 공급함으로써 탑 햇(1a)을 통해 가스배기라인(14)으로부터 배출되는 질소(N2)가스의 흐름에 의해 프로세스 챔버(1)의 바닥에 존재하는 파티클이 탑 햇(1a)쪽으로 상승하는 것을 억제한다.The gas supply line 15 supplies the nitrogen (N 2 ) gas supplied from the gas supply unit 15b by the opening of the on / off valve 15a to the inside of the top hat 1a, thereby providing a gas exhaust line through the top hat 1a. The flow of nitrogen (N 2 ) gas discharged from 14 suppresses the particles present at the bottom of the process chamber 1 from rising toward the top hat 1a.
또한, 탑 햇(1a) 내측의 헤파필터(16)에 의해 가스공급라인(15)으로부터 내측으로 공급되는 질소(N2)가스에 포함된 파티클을 제거한다.In addition, particles contained in nitrogen (N 2 ) gas supplied inwardly from the gas supply line 15 are removed by the HEPA filter 16 inside the top hat 1a.
이상과 같이 본 발명의 바람직한 실시예에 따르면, 프로세스 챔버내에서 배기를 위해 이동하는 질소가스의 흐름에 의해 파티클이 상승하여 웨이퍼측으로 이동하는 것을 억제하도록 질소가스를 공급함으로써 웨이퍼에 파티클이 부착되는 것을 방지한다.As described above, according to a preferred embodiment of the present invention, the particles are attached to the wafer by supplying nitrogen gas to suppress the particles from rising and moving to the wafer side by the flow of nitrogen gas moving for exhaust in the process chamber. prevent.
상술한 바와 같이, 본 발명에 따른 수직형 확산로의 질소가스 순환 시스템은 프로세스 챔버내에서 배기를 위해 이동하는 질소가스의 흐름에 의해 파티클이 상승하여 웨이퍼측으로 이동하는 것을 억제하도록 질소가스를 공급함으로써 웨이퍼에 파티클이 부착되는 것을 방지하여 웨이퍼의 수율을 향상시키는 효과를 가지고 있다.As described above, the nitrogen gas circulation system of the vertical diffusion path according to the present invention is supplied by supplying nitrogen gas to suppress the particles from rising and moving to the wafer side by the flow of nitrogen gas moving for exhaust in the process chamber. It has an effect of preventing the particles from adhering to the wafer to improve the yield of the wafer.
이상에서 설명한 것은 본 발명에 따른 수직형 확산로의 질소가스 순환 시스템을 실시하기 위한 하나의 실시예에 불과한 것으로서, 본 발명은 상기한 실시예에 한정되지 않고, 이하의 특허청구범위에서 청구하는 바와 같이 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경 실시가 가능한 범위까지 본 발명의 기술적 정신이 있다고 할 것이다.What has been described above is only one embodiment for implementing the nitrogen gas circulation system of the vertical diffusion furnace according to the present invention, the present invention is not limited to the above-described embodiment, as claimed in the following claims As described above, any person having ordinary knowledge in the field of the present invention without departing from the gist of the present invention will have the technical spirit of the present invention to the extent that various modifications can be made.
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