KR20040059833A - Hafnium oxide capacitor in semiconductor device and method for forming the same - Google Patents
Hafnium oxide capacitor in semiconductor device and method for forming the same Download PDFInfo
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- KR20040059833A KR20040059833A KR1020020086337A KR20020086337A KR20040059833A KR 20040059833 A KR20040059833 A KR 20040059833A KR 1020020086337 A KR1020020086337 A KR 1020020086337A KR 20020086337 A KR20020086337 A KR 20020086337A KR 20040059833 A KR20040059833 A KR 20040059833A
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000003990 capacitor Substances 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 229910000449 hafnium oxide Inorganic materials 0.000 title claims description 10
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 title claims description 10
- 229910018509 Al—N Inorganic materials 0.000 claims abstract description 26
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 43
- 239000010409 thin film Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000005121 nitriding Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 6
- 229910004349 Ti-Al Inorganic materials 0.000 claims description 5
- 229910004692 Ti—Al Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 14
- 239000000460 chlorine Substances 0.000 abstract description 5
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052801 chlorine Inorganic materials 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 description 21
- 239000007789 gas Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
본 발명은 반도체 제조 기술에 관한 것으로, 특히 반도체 소자 제조 공정 중 캐패시터 형성 공정에 관한 것이며, 더 자세히는 반도체 소자의 하프늄 산화막(HfO2) 캐패시터 및 그 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing technology, and more particularly, to a capacitor forming process in a semiconductor device manufacturing process, and more particularly, to a hafnium oxide (HfO 2 ) capacitor of a semiconductor device and a method of forming the same.
반도체 메모리 소자의 고집적화에 따라 동일 레이아웃 면적에서 보다 큰 캐패시턴스를 확보하기 위한 노력이 계속되고 있다. 캐패시터의 캐패시턴스는 유전율(ε) 및 전극의 유효 표면적에 비례하고, 전극간 거리에 반비례하기 때문에, 종래에는 주로 캐패시터 하부전극의 표면적을 확보하거나 유전체의 박막화로 전극간 거리를 최소화하는 방향으로 많은 연구가 진행되어 왔다. 그러나, 이 중 유전체의 박막화는 누설전류 증가를 수반하는 문제점이 있으며, 이에 따라 캐패시터 구조를 플라나 스택(Planar stack), 콘케이브(Concave), 실린더(cylinder)와 같은 3차원 구조로 형성하여 캐패시터의 유효 표면적을 증대시키는 방법을 주로 사용하여 왔다.As semiconductor memory devices become more integrated, efforts have been made to secure larger capacitances in the same layout area. Since the capacitance of the capacitor is proportional to the dielectric constant (ε) and the effective surface area of the electrode, and is inversely proportional to the distance between the electrodes, conventionally, many studies have been conducted mainly to secure the surface area of the capacitor lower electrode or to minimize the distance between electrodes by thinning the dielectric. Has been going on. However, thinning of the dielectric has a problem of increasing leakage current. Accordingly, the capacitor structure is formed into a three-dimensional structure such as a planar stack, a concave, and a cylinder to form a capacitor. The method of increasing the effective surface area has been mainly used.
그러나, 반도체 소자의 고집적화에 수반되는 디자인 룰의 축소에 따라 이러한 구조적인 개선을 통해 캐패시턴스를 확보하는 방법은 공정 상에 한계에 직면하게 되었다.However, with the reduction of design rules associated with high integration of semiconductor devices, the method of securing capacitance through such structural improvements has faced limitations in the process.
이에 따라, 1 기가비트 이상의 DRAM에서는 기존의 유전체 재료인 NO(nitride/oxide) 박막을 Ta205, HfO5등의 고유전체 박막으로 대체하는 연구가 활발히 진행되고 있다. 특히, 많은 선행 연구가 이루어져 양산에 적용할 가능성이 클 것으로 예상되었던 Ta205박막은 열적 안정성이 떨어지고, 공정 상의 한계에 의해5nm 이하의 얇은 두께에서 특성을 제대로 확보하기 어렵다는 문제점이 지적되고 있다.Accordingly, in the DRAM of 1 gigabit or more, researches are being actively conducted to replace NO (nitride / oxide) thin films, which are existing dielectric materials, with high dielectric thin films such as Ta 2 0 5 and HfO 5 . In particular, it is pointed out that Ta 2 0 5 thin film, which was expected to be applied to mass production due to many previous studies, has poor thermal stability, and it is difficult to properly obtain characteristics at a thickness of 5 nm or less due to process limitations. .
최근 이러한 Ta205박막의 한계를 극복하기 위한 대안으로 HfO2박막이 대두되고 있다. HfO2박막은 Ta205박막과 유사한 유전율을 가질 뿐만 아니라, 열적 안정성과 누설전류 특성이 우수한 장점이 있다.Recently, HfO 2 thin films have emerged as an alternative to overcome the limitations of Ta 2 0 5 thin films. HfO 2 thin films not only have a similar dielectric constant as Ta 2 0 5 thin films, but also have excellent thermal stability and leakage current characteristics.
이러한 HfO2캐패시터를 형성함에 있어서, 하부 전극으로 폴리실리콘막을 사용하는 경우, 충분한 캐패시턴스를 확보하기 어렵기 때문에 금속막을 하부 전극 재료로 도입해야 한다. 이는 금속막을 하부 전극으로 사용하면 HfO2박막의 두께를 줄일 수 있어 캐패시턴스 확보에 유리하기 때문이다.In forming such a HfO 2 capacitor, when a polysilicon film is used as the lower electrode, it is difficult to secure sufficient capacitance, so a metal film must be introduced into the lower electrode material. This is because when the metal film is used as the lower electrode, the thickness of the HfO 2 thin film can be reduced, which is advantageous for securing capacitance.
현재 하부 전극용 금속막으로 화학기상증착법(CVD)으로 증착된 TiN막의 적용이 유망하다. 그런데, 이처럼 TiN막을 하부 전극용 금속막으로 사용하는 경우, 후속 열공정을 진행하는 과정에서 TiN막이 산화되어 누설전류 특성을 열화시키는 문제점이 있으며, 또한 TiN막 증착시 TiN막 내에 포함된 염소(Cl)기가 후속 열공정시 HfO2박막으로 침투하여 캐패시터의 전기적 특성을 열화시키는 문제점이 있었다.Currently, application of TiN films deposited by chemical vapor deposition (CVD) as metal films for lower electrodes is promising. However, when the TiN film is used as the lower electrode metal film as described above, the TiN film is oxidized in a subsequent thermal process to deteriorate the leakage current characteristic. In addition, chlorine (Cl) contained in the TiN film during TiN film deposition. In the subsequent thermal process, the group penetrates into the HfO 2 thin film, thereby deteriorating the electrical characteristics of the capacitor.
본 발명은 상기와 같은 종래기술의 문제점을 해결하기 위하여 제안된 것으로, 후속 열공정시 하부 전극용 TiN막의 산화 및 TiN막 내의 염소기에 의한 HfO2박막의 오염을 방지할 수 있는 반도체 소자의 하프늄 산화막 캐패시터 및 그 형성방법을 제공하는데 그 목적이 있다.The present invention has been proposed to solve the above problems of the prior art, hafnium oxide capacitor of a semiconductor device capable of preventing the oxidation of the TiN film for the lower electrode and the contamination of the HfO 2 thin film by the chlorine group in the TiN film during the subsequent thermal process And a method for forming the same.
도 1은 본 발명의 일 실시예에 따른 HfO2캐패시터의 단면을 나타낸 도면.1 is a cross-sectional view of an HfO 2 capacitor according to an embodiment of the present invention.
도 2a 내지 도 2c는 본 발명의 일 실시예에 따른 HfO2캐패시터 형성 공정을 나타낸 단면도.2A to 2C are cross-sectional views illustrating a HfO 2 capacitor forming process according to an embodiment of the present invention.
* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
10 : 기판10: substrate
12 : Ti-Al-N 하부 전극12 Ti-Al-N lower electrode
14 : HfO2박막14: HfO 2 thin film
16 : 상부 전극16: upper electrode
상기의 기술적 과제를 달성하기 위한 본 발명의 일 측면에 따르면, 기판 상에 제공되는 Ti-Al-N 하부 전극; 상기 Ti-Al-N 하부 전극 상에 제공되는 HfO2박막; 및 상기 HfO2박막 상에 제공되는 상부 전극을 구비하는 반도체 소자의 하프늄 산화막 캐패시터가 제공된다.According to an aspect of the present invention for achieving the above technical problem, a Ti-Al-N lower electrode provided on a substrate; An HfO 2 thin film provided on the Ti-Al-N lower electrode; And a hafnium oxide capacitor of a semiconductor device having an upper electrode provided on the HfO 2 thin film.
또한, 본 발명의 다른 측면에 따르면, 기판 상에 하부 전극용 Ti-Al-N막을 형성하는 단계; 상기 하부 전극용 Ti-Al-N막 상에 HfO2박막을 형성하는 단계; 및 상기 HfO2박막 상에 상부 전극용 전도막을 형성하는 단계를 포함하는 반도체 소자의 하프늄 산화막 캐패시터 형성방법이 제공된다.In addition, according to another aspect of the invention, forming a Ti-Al-N film for the lower electrode on the substrate; Forming a HfO 2 thin film on the Ti-Al-N film for the lower electrode; And forming a conductive film for the upper electrode on the HfO 2 thin film.
본 발명은 HfO2캐패시터의 하부 전극 재료로서 기존의 TiN막을 대신하여 Ti-Al-N막을 사용한다. Ti-Al-N막은 내산화성이 우수하여 후속 열공정에 의한 산화의 가능성이 적다. 한편, 본 발명에서는 염소를 포함하지 않는 증착 소오스를 사용하여 원자층증착법(ALD)을 통해 Ti-Al-N막을 증착한다. 이 경우, 증착 소오스에 질소가 포함되어 있지 않기 때문에 별도의 질화 과정이 필요하며, Ti-Al-N막 내에는 염소기가 포함되지 않기 때문에 후속 열공정시 HfO2박막의 오염을 유발하지 않게된다.The present invention uses a Ti-Al-N film as a lower electrode material for the HfO 2 capacitor instead of the existing TiN film. The Ti-Al-N film has excellent oxidation resistance and is less likely to be oxidized by a subsequent thermal process. Meanwhile, in the present invention, a Ti-Al-N film is deposited by atomic layer deposition (ALD) using a deposition source that does not contain chlorine. In this case, since nitrogen is not included in the deposition source, a separate nitriding process is required, and since the chlorine group is not included in the Ti-Al-N film, contamination of the HfO 2 thin film is not caused during the subsequent thermal process.
이하, 본 발명이 속한 기술분야에서 통상의 지식을 가진 자가 본 발명을 보다 용이하게 실시할 수 있도록 하기 위하여 본 발명의 바람직한 실시예를 소개하기로 한다.Hereinafter, preferred embodiments of the present invention will be introduced in order to enable those skilled in the art to more easily carry out the present invention.
도 1은 본 발명의 일 실시예에 따른 HfO2캐패시터의 단면을 나타낸 도면이다.1 is a cross-sectional view of an HfO 2 capacitor according to an embodiment of the present invention.
도 1을 참조하면, 본 실시예에 따른 HfO2캐패시터는, 기판(10) 상에 제공되는 Ti-Al-N 하부 전극(12)과, Ti-Al-N 하부 전극(12) 상에 제공되는 HfO2박막(14)과, HfO2박막(14) 상에 제공되는 상부 전극(예컨대, TiN막)(16)을 구비한다. 여기서, 기판(10)은 폴리실리콘 플러그 및 Ti/TiN 장벽 금속막을 포함한다.Referring to FIG. 1, the HfO 2 capacitor according to the present embodiment is provided on the Ti-Al-N lower electrode 12 and the Ti-Al-N lower electrode 12 provided on the substrate 10. An HfO 2 thin film 14 and an upper electrode (eg, TiN film) 16 provided on the HfO 2 thin film 14 are provided. Here, the substrate 10 includes a polysilicon plug and a Ti / TiN barrier metal film.
도 2a 내지 도 2c는 본 발명의 일 실시예에 따른 HfO2캐패시터 형성 공정을 나타낸 단면도이다.2A to 2C are cross-sectional views illustrating an HfO 2 capacitor forming process according to an embodiment of the present invention.
우선, 도 2a에 도시된 바와 같이 폴리실리콘 플러그 및 Ti/TiN 장벽 금속막(도시되지 않음)이 형성된 기판(20) 상에 하부 전극용 Ti-Al-N막(22)을 증착한다. 이때, 하부 전극용 Ti-Al-N막(22)은 원자층증착법을 사용하여 형성하며, 자세한 레시피는 다음과 같다.First, as shown in FIG. 2A, a Ti-Al-N film 22 for lower electrodes is deposited on a substrate 20 on which a polysilicon plug and a Ti / TiN barrier metal film (not shown) are formed. At this time, the Ti-Al-N film 22 for the lower electrode is formed by using the atomic layer deposition method, the detailed recipe is as follows.
가) 웨이퍼를 원자층증착 챔버에 로딩하고, 웨이퍼 온도는 200∼450℃, 챔버압력은 0.1∼1Torr로 유지한다.A) The wafer is loaded into an atomic layer deposition chamber, and the wafer temperature is maintained at 200 to 450 DEG C and the chamber pressure is 0.1 to 1 Torr.
나) 소오스 가스인 TMA((CH3)3Al) 가스를 0.1∼10초 동안 플로우시킨 후, 1∼10초 동안 N2퍼지를 실시한다.B) TMA ((CH 3 ) 3 Al) gas, which is a source gas, is flowed for 0.1 to 10 seconds, and then N 2 purge is performed for 1 to 10 seconds.
다) 반응 가스인 H2O 가스를 0.1∼10초 동안 플로우시킨 후, 1∼10초 동안 N2퍼지를 실시한다.C) After flowing H 2 O gas, which is a reaction gas, for 0.1 to 10 seconds, N 2 purge is performed for 1 to 10 seconds.
라) 소오스 가스인 Ti(OC2H5)4를 가스를 0.1∼10초 동안 플로우시킨 후, 1∼10초 동안 N2퍼지를 실시한다.D) Source gas Ti (OC 2 H 5 ) 4 is flowed for 0.1 to 10 seconds, and then N 2 purge is performed for 1 to 10 seconds.
마) 반응 가스인 H2O 가스를 0.1∼10초 동안 플로우시킨 후, 1∼10초 동안 N2퍼지를 실시한다.E) After flowing H 2 O gas, which is a reaction gas, for 0.1 to 10 seconds, N 2 purge is performed for 1 to 10 seconds.
바) 상기 나)∼마) 과정을 반복적으로 수행하고(이때, 증착되는 물질은 Ti-Al계 물질막임), 중간 중간에 질화 과정을 삽입한다. 이때, 질화를 위해 분위기 가스로 NH3가스(30sccm∼10slm)를 사용하고, 500∼800℃의 온도, 0.1∼1Torr의 압력 조건으로 5∼300초 동안 급속 열처리를 수행한다. 한편, NH3급속 열처리를 대신하여 NH3플라즈마 처리를 수행해도 무방하다.F) Repeat the steps b) to e) (at this time, the deposited material is a Ti-Al-based material film), and insert a nitriding process in the middle. At this time, NH 3 gas (30 sccm to 10 slm) is used as the atmospheric gas for nitriding, and rapid heat treatment is performed for 5 to 300 seconds at a temperature of 500 to 800 ° C. and a pressure of 0.1 to 1 Torr. In addition, the NH 3 plasma treatment may be performed instead of the NH 3 rapid heat treatment.
다음으로, 도 2b에 도시된 바와 같이 하부 전극용 Ti-Al-N막(22) 상에 HfO2박막(24)을 증착한다. 이때, HfO2박막(24)은 화학기상증착법으로 증착하며, 그 상세 레시피는 다음과 같다. 물론 HfO2박막(24)을 원자층증착법으로 증착할 수도 있다.Next, as shown in FIG. 2B, the HfO 2 thin film 24 is deposited on the Ti-Al-N film 22 for the lower electrode. At this time, the HfO 2 thin film 24 is deposited by chemical vapor deposition, the detailed recipe is as follows. Of course, the HfO 2 thin film 24 may be deposited by atomic layer deposition.
가) HfCl4, Hf(NO3)4, Hf(NCH2C2H5)4등의 Hf 소오스를 기화기에서 기화시킨다.A) Hf sources such as HfCl 4 , Hf (NO 3 ) 4 , and Hf (NCH 2 C 2 H 5 ) 4 are vaporized in a vaporizer.
나) 서브 히터의 온도는 200∼400℃, 챔버 압력은 0.1∼10Torr로 유지한다.B) The temperature of the sub heater is maintained at 200 to 400 ° C. and the chamber pressure is 0.1 to 10 Torr.
다) 반응 가스로는 O2또는 N2O 가스(10∼1000sccm)를 사용한다.C) As the reaction gas, O 2 or N 2 O gas (10 to 1000 sccm) is used.
라) 후속 저온 열처리 공정으로 300∼500℃ 온도에서 플라즈마 처리를 수행한다. 이때, 플라즈마 소오스로 N2+O2플라즈마 처리, N2O 플라즈마 처리, UV-O3플라즈마 처리 중 어느 하나를 사용한다.D) A plasma treatment is performed at a temperature of 300 to 500 ° C. in a subsequent low temperature heat treatment process. At this time, any one of N 2 + O 2 plasma treatment, N 2 O plasma treatment, and UV-O 3 plasma treatment is used as the plasma source.
마) 후속 고온 열처리 공정으로 500∼650℃ 온도에서 급속 열처리 또는 퍼니스 열처리를 수행한다. 이때, 분위기 가스로는 N2가스를 사용한다.E) Rapid heat treatment or furnace heat treatment is performed at 500 ~ 650 ℃ in the subsequent high temperature heat treatment process. At this time, N 2 gas is used as the atmospheric gas.
이어서, 도 2c에 도시된 바와 같이 HfO2박막(24) 상에 상부 전극용 TiN막(26)을 증착한다.Next, as shown in FIG. 2C, the TiN film 26 for the upper electrode is deposited on the HfO 2 thin film 24.
이후, 사진 및 식각 공정을 통해 상부 전극용 TiN막(26), HfO2박막(24), 하부 전극용 Ti-Al-N막(22)을 패터닝하여 단위 캐패시터를 디파인한다.Subsequently, the unit capacitor is defined by patterning the upper electrode TiN film 26, the HfO 2 thin film 24, and the lower electrode Ti-Al-N film 22 through photolithography and etching processes.
전술한 바와 같이 본 발명에서는 HfO2캐패시터의 하부 전극 재료로서 Ti-Al-N막을 사용한다. Ti-Al-N막은 내산화성이 우수하여 후속 열공정에 의한 산화의 가능성이 적다. 한편, 공정 측면에서 보면, 염소를 포함하지 않는 증착 소오스를사용하여 원자층증착법(ALD)을 통해 Ti-Al-N막을 형성한다. 따라서, Ti-Al-N막 내에 염소기가 포함되지 않기 때문에 후속 열공정시 HfO2박막의 오염을 유발하지 않게 된다. 또한, ALD법에 의해 형성된 Ti-Al계 물질막을 질화시키는 과정에서 NH3가스를 사용하면 박막 내에 존재하는 탄소 및 산소를 쉽게 제거할 수 있다. 한편, ALD법은 스텝 커버리지 측면에서도 유리하다.As described above, in the present invention, a Ti-Al-N film is used as the lower electrode material of the HfO 2 capacitor. The Ti-Al-N film has excellent oxidation resistance and is less likely to be oxidized by a subsequent thermal process. On the other hand, in terms of processes, a Ti-Al-N film is formed through atomic layer deposition (ALD) using a deposition source that does not contain chlorine. Therefore, since the chlorine group is not included in the Ti-Al-N film, it does not cause contamination of the HfO 2 thin film in a subsequent thermal process. In addition, when NH 3 gas is used in the process of nitriding the Ti-Al-based material film formed by the ALD method, carbon and oxygen present in the thin film can be easily removed. On the other hand, the ALD method is also advantageous in terms of step coverage.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속한 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge.
예컨대, 전술한 실시예에서는 상부 전극용 전도막까지 적층이 완료된 후에 패터닝 공정을 수행하는 경우를 일례로 들어 설명하였으나, 본 발명은 중간 과정에서 패터닝을 수행하는 경우에도 적용된다.For example, in the above-described embodiment, the case in which the patterning process is performed after the lamination is completed up to the conductive film for the upper electrode has been described as an example. However, the present invention is applied to the case where the patterning is performed in the intermediate process.
또한, 전술한 실시예에서는 스택형 캐패시터를 일례로 들어 설명하였으나, 본 발명은 컨케이브(concave)형 캐패시터, 실린더형 캐패시터 등 다른 구조의 캐패시터 형성시에도 적용된다.In addition, in the above-described embodiment, the stack type capacitor has been described as an example, but the present invention is also applied to the formation of capacitors having other structures such as a concave type capacitor and a cylindrical type capacitor.
전술한 본 발명은 HfO2캐패시터의 누설전류 특성 및 전기적 특성을 개선하는 효과가 있으며, 이로 인하여 반도체 소자의 신뢰도 및 수율을 개선하는 효과가 있다.The present invention described above has the effect of improving the leakage current characteristics and electrical characteristics of the HfO 2 capacitor, thereby improving the reliability and yield of the semiconductor device.
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