KR20040049907A - Precleaning device - Google Patents

Precleaning device Download PDF

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Publication number
KR20040049907A
KR20040049907A KR1020020076874A KR20020076874A KR20040049907A KR 20040049907 A KR20040049907 A KR 20040049907A KR 1020020076874 A KR1020020076874 A KR 1020020076874A KR 20020076874 A KR20020076874 A KR 20020076874A KR 20040049907 A KR20040049907 A KR 20040049907A
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KR
South Korea
Prior art keywords
wafer
pedestal
base
mounting surface
chamber
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KR1020020076874A
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Korean (ko)
Inventor
장대근
김현수
이광제
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삼성전자주식회사
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Priority to KR1020020076874A priority Critical patent/KR20040049907A/en
Publication of KR20040049907A publication Critical patent/KR20040049907A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: A precleaning apparatus is provided to control redeposition of an etched layer by forming the upper surface of a base surrounding a support table on the same surface as the mounting surface of the support table and by supporting the wafer inserted into a chamber to perform a precleaning process. CONSTITUTION: An RF(radio frequency) etch process is performed in a chamber(32). The support table(34) is installed in the chamber so that a wafer(20) is mounted on the support table having a smaller mounting surface(33) than the wafer. A base(36) of an insulation material surrounds the support table. A supporting surface(35) supports the edge of the wafer mounted on the support table, formed on the same surface as the mounting surface. A slanting surface(37) controls sliding and transferring from the mounting surface of the support table, slanting upward with respect to the supporting surface. The upper surface of the base includes the supporting surface and the slanting surface.

Description

프리크리닝 장치{Precleaning device}Precleaning device

본 발명은 반도체 제조 장치에 관한 것으로, 더욱 상세하게는 금속 공정 중 장벽 금속층을 형성하는 공정에서 자연 산화막을 제거하는 프리크리닝 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a precleaning apparatus for removing a natural oxide film in a process of forming a barrier metal layer in a metal process.

반도체 제조 공정에 있어서, 금속 공정(metal step)에서 비아(via)나 금속 컨택(metal contact)에 장벽 금속층(barrier metal)을 형성하는 공정에서 자연 산화막(natural oxide)을 제거하기 위한 프리크리닝 공정(precleaning step)을 진행한다. 프리크리닝 공정은 고진공 상태에서 RF 플라즈마를 이용하여 아르곤(Ar) 입자를 이온화하여 웨이퍼 표면과 컨택에 형성된 자연 산화막을 식각하는 공정이다.In the semiconductor manufacturing process, a pre-cleaning process for removing a natural oxide in a process of forming a barrier metal layer in a via or a metal contact in a metal step ( Proceed with the precleaning step. In the pre-cleaning process, argon (Ar) particles are ionized using RF plasma in a high vacuum state to etch natural oxide films formed on the wafer surface and the contacts.

프리크리닝 공정을 진행하는 프리크리닝 장치(10)는, 도 1에 도시된 바와 같이, RF 플라즈마 식각 공정을 진행하는 챔버(12)와, 챔버(12) 내에 설치되어 웨이퍼(20)를 지지하는 받침대(14)를 포함하며, 받침대(14)는 절연 소재의 베이스(16) 위에 소정의 높이로 설치된다. 베이스(16)는 석영류(quartz) 소재로 제조된다. 받침대의 탑재면(13)은 웨이퍼(20)보다는 작은 넓이를 가지며, 티타늄(Ti) 소재로 제조된다.As shown in FIG. 1, the precleaning apparatus 10 that performs the precleaning process includes a chamber 12 that performs an RF plasma etching process and a pedestal installed in the chamber 12 to support the wafer 20. 14, the pedestal 14 is installed at a predetermined height on the base 16 of the insulating material. The base 16 is made of quartz material. The mounting surface 13 of the pedestal has a smaller area than the wafer 20 and is made of titanium (Ti) material.

그런데 웨이퍼(20)는 소정의 높이로 돌출된 받침대의 탑재면(13)과 면접촉을 이루고 있기 때문에, 고진공 상태로 진행되는 챔버(12)내에서 발생될 수 있는 진동(vibration)에 의해 웨이퍼(20)가 받침대(14)에서 미끄러질 수 있다.However, since the wafer 20 is in surface contact with the mounting surface 13 of the pedestal protruding at a predetermined height, the wafer 20 may be caused by vibrations that may occur in the chamber 12 that proceeds in a high vacuum state. 20 may slide on the pedestal 14.

그리고 받침대(14)에 지지된 웨이퍼(20)와 베이스(16) 사이에는 약 0.025 인치(inch) 정도의 틈이 있기 때문에, 챔버(12) 내에서 프리크리닝 공정이 반복될수록 받침대(14)와 베이스(16)에 식각된 막질이 재증착되어 파티클(particle)의 소재로 작용하게 된다.Since there is a gap of about 0.025 inch between the wafer 20 and the base 16 supported by the pedestal 14, the precleaning process is repeated in the chamber 12 as the pedestal 14 and the base are repeated. The film etched in (16) is redeposited to act as a particle material.

따라서, 본 발명의 목적은 받침대에 지지되는 웨이퍼의 미끄러짐을 억제하는 데 있다.Accordingly, an object of the present invention is to suppress slippage of a wafer supported on a pedestal.

본 발명의 다른 목적은 프리크리닝 공정에서 식각된 막질이 재증착되는 것을 억제하는 데 있다.Another object of the present invention is to suppress the redeposition of the etched film in the precleaning process.

도 1은 종래기술에 따른 프리크리닝 장치를 보여주는 도면이다.1 is a view showing a precleaning apparatus according to the prior art.

도 2는 본 발명의 실시예에 따른 프리크리닝 장치를 보여주는 도면이다.2 is a view showing a precleaning apparatus according to an embodiment of the present invention.

* 도면의 주요 부분에 대한 설명 *Description of the main parts of the drawing

10, 30 : 프리크리닝 장치 12, 32 : 챔버10, 30: precleaning device 12, 32: chamber

13, 33 : 탑재면 14, 34 : 받침대13, 33: mounting surface 14, 34: pedestal

16, 36 : 베이스 20 : 웨이퍼16, 36: base 20: wafer

35 : 지지면 37 : 경사면35: support surface 37: inclined surface

상기 목적을 달성하기 위하여, 웨이퍼에 대한 금속 공정 중 장벽 금속층을 형성하는 공정에서 자연 산화막을 제거하는 프리크리닝 장치로서, RF 식각 공정을 진행하는 챔버와; 상기 챔버 내에 설치되며 웨이퍼가 탑재되어 지지되며, 상기 웨이퍼보다는 작은 탑재면을 갖는 받침대; 및 상기 받침대를 둘러싸는 절연 소재의 베이스;를 포함하며,In order to achieve the above object, a pre-cleaning apparatus for removing a natural oxide film in the process of forming a barrier metal layer during the metal process for the wafer, comprising: a chamber for performing an RF etching process; A pedestal having a mounting surface installed in the chamber and having a wafer mounted thereon and having a smaller mounting surface than the wafer; And a base of insulating material surrounding the pedestal;

상기 베이스의 상부면은 상기 탑재면과 동일면에 형성되어 상기 받침대에 탑재된 웨이퍼의 가장자리 부분을 지지하는 지지면과, 상기 지지면에 대해서 상향으로 경사지게 형성되어 상기 받침대의 탑재면에서 웨이퍼가 미끄러져 이동하는 것을 억제하는 경사면을 포함하는 것을 특징으로 하는 프리크리닝 장치를 제공한다.The upper surface of the base is formed on the same surface as the mounting surface to support the edge portion of the wafer mounted on the pedestal, and is formed to be inclined upwardly with respect to the support surface so that the wafer slides on the mounting surface of the pedestal. It provides a pre-cleaning device comprising an inclined surface to suppress the movement.

본 발명에 따른 받침대 소재로는 티타늄을 사용하고, 베이스의 소재로는 세라믹을 사용하는 것이 바람직하다.Titanium is used as the base material according to the present invention, and ceramics are used as the base material.

그리고 받침대의 탑재면과 베이스의 지지면의 합의 면적은 챔버로 투입되는 웨이퍼의 면적에 대응되는 면적을 갖는다.The area of the sum of the mounting surface of the pedestal and the supporting surface of the base has an area corresponding to the area of the wafer fed into the chamber.

이하, 첨부 도면을 참조하여 본 발명의 실시예를 보다 상세하게 설명하고자 한다.Hereinafter, with reference to the accompanying drawings will be described in detail an embodiment of the present invention.

도 2는 본 발명의 실시예에 따른 프리크리닝 장치(30)를 보여주는 도면이다. 도 2를 참조하면, 본 발명의 실시예에 따른 프리크리닝 장치(30)는 RF 식각 공정을 진행하는 챔버(32)와, 챔버(32) 내에 설치되며 웨이퍼(20)가 탑재되어 지지되는 받침대(34) 및 받침대(34)가 설치되는 베이스(36)를 포함한다.2 shows a precleaning apparatus 30 according to an embodiment of the present invention. Referring to FIG. 2, the precleaning apparatus 30 according to an exemplary embodiment of the present invention includes a chamber 32 for performing an RF etching process and a pedestal installed in the chamber 32 and on which the wafer 20 is mounted and supported. 34) and base 36 on which pedestal 34 is installed.

특히 본 발명에 따른 프리크리닝 장치(30)는 받침대의 탑재면(33)에서 웨이퍼(20)가 미끄러지거나 식각된 막질이 재증착되는 것을 억제하기 위해서, 웨이퍼(20)가 탑재되는 면과 웨이퍼(20) 사이에 틈이 존재하지 않고 웨이퍼(20)가 탑재된 이후에 웨이퍼(20)가 미끄러지는 것을 방지할 수 있도록 베이스(36)에 받침대(34)가 설치된다. 받침대(34)는 웨이퍼(20)가 탑재되어 지지되며, 웨이퍼(20)보다는 작은 탑재면(33)을 갖는다. 그리고 베이스(36)는 받침대(34)를 둘러싸는 형태를 갖되, 베이스(36)의 상부면은 받침대의 탑재면(33)과 동일면에 형성되어 받침대(34)에 탑재된 웨이퍼(20)의 가장자리 부분을 지지하는 지지면(35)과, 지지면(35)에 대해서 상향으로 경사지게 형성된 경사면(37)을 포함한다. 즉, 받침대(34)를 벗어나는 웨이퍼(20)의 가장자리 부분을 베이스의 지지면(35)이 면접촉을 이루면서 지지하기 때문에, 웨이퍼(20)와 받침대(34) 및 베이스(36) 사이에는 틈이 존재하지 않기 때문에, 식각된 막질이 재증착되는 것을 억제할 수 있다. 그리고 베이스의 지지면(35)과 이어진 경사면(37)은, 받침대(34)와 베이스의 지지면(35)에 탑재된 웨이퍼(20)가 진동에 의해 받침대(34)에서 미끄러지는 것을 억제한다. 이때 받침대의 탑재면(33)과 베이스의 지지면(35)의 합의 면적은 챔버(32)로 투입되는 웨이퍼(20)의 면적에 대응되는 면적을 갖도록 형성하는 것이 바람직하다.In particular, the pre-cleaning apparatus 30 according to the present invention includes a surface and a wafer on which the wafer 20 is mounted, in order to prevent the wafer 20 from slipping or re-depositing the etched film quality on the mounting surface 33 of the pedestal. A pedestal 34 is installed on the base 36 to prevent the wafer 20 from slipping after the wafer 20 is mounted without a gap between the two. The pedestal 34 is mounted on and supported by the wafer 20 and has a mounting surface 33 smaller than the wafer 20. And the base 36 has a form surrounding the pedestal 34, the upper surface of the base 36 is formed on the same surface as the mounting surface 33 of the pedestal, the edge of the wafer 20 mounted on the pedestal 34 The support surface 35 which supports a part, and the inclined surface 37 inclined upward with respect to the support surface 35 are included. That is, since the support portion 35 of the base supports the edge portion of the wafer 20 leaving the pedestal 34 in surface contact, a gap is formed between the wafer 20 and the pedestal 34 and the base 36. Since it does not exist, it is possible to suppress redeposition of the etched film. And the inclined surface 37 connected with the base support surface 35 suppresses the base 20 and the wafer 20 mounted in the base support surface 35 from sliding by the base 34 by vibration. At this time, the area of the sum of the mounting surface 33 of the pedestal and the support surface 35 of the base is preferably formed to have an area corresponding to the area of the wafer 20 introduced into the chamber 32.

여기서 받침대(34) 소재로 티타늄(Ti)을 사용하는 것이 바람직하고, 베이스(36)의 소재로는 세라믹(ceramic)을 사용하는 것이 바람직하다.Here, it is preferable to use titanium (Ti) as the material of the base 34, and it is preferable to use ceramic (ceramic) as the material of the base 36.

한편, 본 명세서와 도면에 개시된 본 발명의 실시예들은 이해를 돕기 위해 특정 예를 제시한 것에 지나지 않으며, 본 발명의 범위를 한정하고자 하는 것은 아니다. 여기에 개시된 실시예들 이외에도 본 발명의 기술적 사상에 바탕을 둔 다른 변형예들이 실시 가능하다는 것은, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 자명한 것이다.On the other hand, the embodiments of the present invention disclosed in the specification and drawings are merely presented specific examples to aid understanding and are not intended to limit the scope of the present invention. In addition to the embodiments disclosed herein, it is apparent to those skilled in the art that other modifications based on the technical idea of the present invention may be implemented.

따라서, 본 발명의 구조를 따르면 받침대를 둘러싸는 베이스의 상부면의 지지면이 받침대의 탑재면과 동일면 상에 형성되어 프리크리닝 공정을 진행하기 위해서 챔버에 투입된 웨이퍼를 지지하기 때문에, 웨이퍼와 받침대 및 베이스 사이에 틈이 존재하지 않아 식각되는 막질이 재증착되는 것을 억제할 수 있다.Therefore, according to the structure of the present invention, since the supporting surface of the upper surface of the base surrounding the pedestal is formed on the same surface as the mounting surface of the pedestal to support the wafers introduced into the chamber for the precleaning process, the wafer and pedestal and Since there is no gap between the bases, it is possible to suppress the redeposition of the etched film.

그리고 베이스의 지지면과 이어진 베이스의 상부면이 상향으로 경사진 경사면을 포함하기 때문에, 받침대와 베이스의 지지면에 탑재된 웨이퍼가 외부의 진동에 의해 미끄러지는 것을 억제할 수 있다.Since the support surface of the base and the upper surface of the base connected to each other include an inclined surface inclined upward, the wafer mounted on the pedestal and the support surface of the base can be prevented from slipping due to external vibration.

Claims (3)

웨이퍼에 대한 금속 공정 중 장벽 금속층을 형성하는 공정에서 자연 산화막을 제거하는 프리크리닝 장치로서,A precleaning apparatus for removing a native oxide film in a process of forming a barrier metal layer in a metal process on a wafer, RF 식각 공정을 진행하는 챔버와;A chamber for performing an RF etching process; 상기 챔버 내에 설치되며 웨이퍼가 탑재되어 지지되며, 상기 웨이퍼보다는 작은 탑재면을 갖는 받침대; 및A pedestal having a mounting surface installed in the chamber and having a wafer mounted thereon and having a smaller mounting surface than the wafer; And 상기 받침대를 둘러싸는 절연 소재의 베이스;를 포함하며,A base of insulating material surrounding the pedestal; 상기 베이스의 상부면은 상기 탑재면과 동일면에 형성되어 상기 받침대에 탑재된 웨이퍼의 가장자리 부분을 지지하는 지지면과, 상기 지지면에 대해서 상향으로 경사지게 형성되어 상기 받침대의 탑재면에서 웨이퍼가 미끄러져 이동하는 것을 억제하는 경사면을 포함하는 것을 특징으로 하는 프리크리닝 장치.The upper surface of the base is formed on the same surface as the mounting surface to support the edge portion of the wafer mounted on the pedestal, and is formed to be inclined upwardly with respect to the support surface so that the wafer slides on the mounting surface of the pedestal. A pre-cleaning device comprising an inclined surface to suppress the movement. 제 1항에 있어서, 상기 받침대는 티타늄 소재이며, 상기 베이스는 세라믹 소재인 것을 특징으로 하는 프리크리닝 장치.The precleaning apparatus according to claim 1, wherein the pedestal is made of titanium and the base is made of ceramic. 제 1항에 있어서, 상기 받침대의 탑재면과 상기 베이스의 지지면의 합의 면적은 상기 챔버로 투입되는 웨이퍼의 면적에 대응되는 면적을 갖는 것을 특징으로 하는 프리크리닝 장치.The precleaning apparatus according to claim 1, wherein an area of the sum of the mounting surface of the pedestal and the support surface of the base has an area corresponding to the area of the wafer introduced into the chamber.
KR1020020076874A 2002-12-05 2002-12-05 Precleaning device KR20040049907A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014163800A1 (en) * 2013-03-12 2014-10-09 Applied Materials, Inc. Substrate support for plasma etch operations

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014163800A1 (en) * 2013-03-12 2014-10-09 Applied Materials, Inc. Substrate support for plasma etch operations
US10593521B2 (en) 2013-03-12 2020-03-17 Applied Materials, Inc. Substrate support for plasma etch operations

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