KR20040049518A - Atmospheric pressure plasma processing apparatus and its process by gas suction method - Google Patents
Atmospheric pressure plasma processing apparatus and its process by gas suction method Download PDFInfo
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- KR20040049518A KR20040049518A KR1020020077315A KR20020077315A KR20040049518A KR 20040049518 A KR20040049518 A KR 20040049518A KR 1020020077315 A KR1020020077315 A KR 1020020077315A KR 20020077315 A KR20020077315 A KR 20020077315A KR 20040049518 A KR20040049518 A KR 20040049518A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/86—Catalytic processes
- B01D53/88—Handling or mounting catalysts
- B01D53/885—Devices in general for catalytic purification of waste gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Abstract
Description
본 발명은 흡입형 기체유동을 이용한 대기압 플라즈마 표면처리장치 및 그 처리방법에 관한 것으로, 보다 자세하게는 대기압 플라즈마 표면처리 장치에 있어서, 대기 중의 공기가 전극으로 흡입될 수 있도록 하여 이 때 발생하는 공기의 유동을 이용해서 플라즈마를 방전시키고, 반응된 유해기체가 외부로 유출되지 않도록 하는 대기압 플라즈마 표면처리장치에 관한 것이다.The present invention relates to an atmospheric pressure plasma surface treatment apparatus using a suction type gas flow, and more particularly, to an atmospheric pressure plasma surface treatment apparatus, in which atmospheric air can be sucked into an electrode, The present invention relates to an atmospheric plasma surface treatment apparatus for discharging a plasma by using a flow and preventing the reacted harmful gas from flowing out.
미국특허 제5,124,173호에는 평판 전극사이에 피처리물을 놓고 불활성 기체를 이용하여 대기압에서 유전막 방전(dielectric barrier discharge)을 일으켜 표면을 친수처리하는 방법에 대해 개시하고 있다. 또한 미국특허 제5,414,324호에서는 이러한 대기압 플라즈마를 형성시키기 위한 기체의 조성과 전극간 간격 등의 조건을 변화시켜 방전 상태를 개선하였고, 미국특허 제6,4296400호에서는 평판 전극이 아닌 튜브 형태의 전극을 적용한 대기압 플라즈마 장치에 대해서 개시하고 있다. 이러한 연구들은 도 1에서 나타낸 것과 같이 고전압 전극(1)과 접지전극(2) 사이에 피처리물(4)을 두고 가스공급부(3)에서 공급되는 기체를 사용하여 방전이 일어나도록 한다.U. S. Patent No. 5,124, 173 discloses a method of hydrophilic treatment of a surface by placing a workpiece between plate electrodes and generating a dielectric barrier discharge at atmospheric pressure using an inert gas. In addition, US Pat. No. 5,414,324 improves the discharge state by changing conditions such as gas composition and interelectrode spacing to form such an atmospheric plasma. US Pat. No. 6,4296400 uses a tube-shaped electrode instead of a flat electrode. The applied atmospheric pressure plasma apparatus is disclosed. As shown in FIG. 1, these studies have discharged by using the gas supplied from the gas supply unit 3 by placing the workpiece 4 between the high voltage electrode 1 and the ground electrode 2.
그러나, 상기와 같은 종래의 대기압 플라즈마 장치는 밀폐된 챔버내에서 반응이 일어나는 진공 플라즈마 처리장치와는 달리 오픈 시스템에서 작동되기 때문에 연속공정이 가능한 장점이 있긴 하지만, 반응된 기체가 그대로 외부로 유출된다는 문제점이 있다. 즉 방전 후에 생성되는 O3, NOx, CF4, C2F6와 같은 유해기체가 넓은 공간에 그대로 노출되거나 이러한 유해기체를 포집한다고 해도 넓은 공간에서 효과적으로 포집하는 것이 어렵다. 따라서 이러한 반응된 기체가 유출되면 주변 기기를부식, 변색 시켜 설비를 손상시키며 작업자의 안전을 위협하게 된다.However, the conventional atmospheric plasma apparatus as described above has the advantage that the continuous process is possible because it operates in an open system unlike the vacuum plasma processing apparatus in which the reaction occurs in a closed chamber, but the reacted gas is leaked to the outside as it is. There is a problem. That is, even if harmful gases such as O 3 , NO x , CF 4 , and C 2 F 6 generated after discharge are exposed to large spaces as they are or are collected, it is difficult to effectively collect them in large spaces. Therefore, when the reacted gas is leaked, the peripheral equipment is corroded and discolored, damaging the facility and threatening the safety of the worker.
또한 종래의 대기압 플라즈마 장치는 도 1에서 나타낸 바와 같이 가스공급부(3)에서 기체를 공급하기 때문에 전극 주변 압력이 국부적으로 높아지므로 기체입자의 평균이동거리(mean free path)가 짧아져서 방전이 어려워지고, 전력의 소모가 높아지며 이상방전이 발생할 수 있다는 문제점이 있다.In addition, since the conventional atmospheric pressure plasma apparatus supplies gas from the gas supply unit 3 as shown in FIG. 1, since the pressure around the electrode is locally increased, the mean free path of the gas particles is shortened, and the discharge becomes difficult. As a result, power consumption increases and abnormal discharge may occur.
따라서, 본 발명은 상기와 같은 종래 기술의 제반단점과 문제점을 해결하기 위한 것으로, 대기압 플라즈마의 방전시에 필요한 기체를 별도로 공급하지 않고, 대기압 펌프를 이용하여 외부의 공기가 흡입되도록 함으로써 방전을 일으키며, 이 때 반응시 생성된 유해기체가 외부로 유출되지 않도록 하여 유해기체에 의한 설비의 손상과 작업자의 안전을 보장하고, 이상방전을 억제하여 플라즈마 처리효율을 향상시키도록 하는 데에 본 발명의 목적이 있다.Accordingly, the present invention is to solve the above-mentioned disadvantages and problems of the prior art, without causing a separate supply of the gas required for the discharge of the atmospheric pressure plasma, by causing the outside air to be sucked by using the atmospheric pressure pump to generate a discharge In this case, the object of the present invention to improve the plasma treatment efficiency by ensuring that the harmful gas generated during the reaction is not leaked to the outside to ensure the damage of the facility by the harmful gas and the safety of the workers, and to suppress abnormal discharge. There is this.
도 1은 종래의 대기압 플라즈마 표면처리장치를 나타낸 것이다.Figure 1 shows a conventional atmospheric plasma surface treatment apparatus.
도 2는 본 발명에 의한 대기압 플라즈마 표면처리장치를 나타낸 것이다.Figure 2 shows an atmospheric pressure plasma surface treatment apparatus according to the present invention.
도 3은 본 발명에 의한 대기압 플라즈마 표면처리방법을 나타낸 플로우 차트이다.3 is a flowchart illustrating an atmospheric pressure plasma surface treatment method according to the present invention.
((도면의 주요부분에 대한 부호의 설명))((Explanation of symbols for main parts of drawing))
1. 고전압 전극 2. 접지전극1. High voltage electrode 2. Grounding electrode
3. 가스공급부 4. 피처리물3. Gas supply part 4. Processed object
5. 프레임 6. 기체유동관5. Frame 6. Gas Flow Tube
7. 분해촉매부 8. 대기압펌프7. Decomposition Catalyst 8. Atmospheric Pressure Pump
본 발명의 상기 목적은 고전압 전극(1)과 접지전극(2) 및 각각의 전극에 연결된 분해촉매부(7)와 대기압 펌프(8)를 포함하여 이루어진 흡입형 기체유동을 이용한 대기압 플라즈마 표면처리장치 및 그 처리방법에 의해 달성된다.The above object of the present invention is an atmospheric pressure plasma surface treatment apparatus using a suction type gas flow comprising a high voltage electrode (1) and a ground electrode (2) and a decomposition catalyst (7) and an atmospheric pressure pump (8) connected to each electrode And the treatment method thereof.
본 발명의 대기압 플라즈마 표면처리 장치의 표면처리 방법은 다음과 같다. 대기압 펌프와 전원이 인가되면 대기압 펌프에 의해 전극 주변에 국부적으로 저압이 형성되고 외부의 공기가 흡입되는 단계와, 이렇게 외부에서 흡입된 공기를 이용하여 플라즈마가 생성되어 피처리물의 표면처리가 이루어지는 단계 및 방전시에 발생된 유해기체가 전극쪽으로 흡입되어 기체유동관을 통해 분해촉매부로 유입된 후 청정처리되는 단계를 포함하여 이루어진다.The surface treatment method of the atmospheric pressure plasma surface treatment apparatus of this invention is as follows. When the atmospheric pressure pump and the power is applied, the low pressure is locally formed around the electrode by the atmospheric pressure pump, and the outside air is sucked, and the plasma is generated by using the air sucked from the outside to perform the surface treatment of the workpiece. And a harmful gas generated at the time of discharge is sucked toward the electrode, introduced into the decomposition catalyst through a gas flow tube, and then cleaned.
본 발명의 상기 목적과 기술적 구성 및 그에 따른 작용효과에 관한 자세한 사항은 본 발명의 명세서에 첨부된 도면을 참조한 이하 상세한 설명에 의해 보다 명확하게 이해될 것이다.Details of the above object and technical configuration of the present invention and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the accompanying drawings.
먼저, 도 2는 본 발명에 의한 대기압 플라즈마 표면처리장치를 나타낸 것이다.First, Figure 2 shows an atmospheric pressure plasma surface treatment apparatus according to the present invention.
전원공급부에 연결되어 있는 고전압 전극(1); 상기 고전압 전극과 대향되도록 위치한 접지전극(2); 상기의 고전압 전극과 접지전극에서부터 분해촉매부(7)로 연결되도록 하는 기체유동관(6); 및 상기 분해촉매부(7)와 연결된 대기압펌프(8)를 포함하여 이루어져 있다.A high voltage electrode 1 connected to the power supply; A ground electrode (2) positioned to face the high voltage electrode; A gas flow tube 6 connected to the decomposition catalyst 7 from the high voltage electrode and the ground electrode; And an atmospheric pressure pump 8 connected with the decomposition catalyst 7.
이 때의 고전압 전극(1)은 금속으로 이루어진 금속전극으로서, 적어도 하나 이상의 전극이 일정 간격으로 배열되어 있으며 각각이 모두 전원에 연결되어 있다. 그리고, 기체의 유동을 효과적으로 제어하기 위하여 고전압 전극(1) 주변에 프레임(5)이 형성되어 있어, 방전에 의해 생성된 기체가 프레임 내로 흡입되고 이 프레임에서 연결된 기체유동관(6)을 통하여 분해촉매부(7)로 유입되도록 설계되어 있다. 그리고, 상기의 접지전극은(2) 접지전극의 역할을 하면서도 방전시 생성된 유해기체를 흡입할 수 있는 튜브 형태로 이루어져 있다. 본 발명에서는 방전시 생성된 유해기체를 효율적으로 흡입할 수 있도록 도 2에 나타낸 것처럼 접지전극의 형상을 입구는 깔대기 모양에 천공판을 얹은 듯한 모양을 하고 있는 튜브 형태로 설계하였다. 그러나, 접지전극의 모양은 여기에 한정되는 것이 아니며 조건에 따라 변화할 수 있다. 그리고, 이와 같은 본 발명의 대기압 플라즈마 장치의 전극 주변에 분해촉매부로 연결되는 별도의 공기 흡입구를 장착하여 방전시 발생된 기체를 전극 주변에서 뿐만 아니라 별도의 공기 흡입구에 의해서도 추가적으로 포집할 수도 있다.At this time, the high voltage electrode 1 is a metal electrode made of metal, and at least one or more electrodes are arranged at regular intervals, and each of them is connected to a power source. In order to effectively control the flow of the gas, a frame 5 is formed around the high voltage electrode 1 so that the gas generated by the discharge is sucked into the frame and decomposed through the gas flow tube 6 connected in the frame. It is designed to flow into the part (7). In addition, the ground electrode (2) serves as a ground electrode, but in the form of a tube that can suck the harmful gas generated during discharge. In the present invention, in order to efficiently suck the harmful gas generated during discharge, the ground electrode is designed in the shape of a tube having an inlet shaped like a perforated plate on a funnel. However, the shape of the ground electrode is not limited thereto and may vary depending on conditions. In addition, by mounting a separate air inlet connected to the decomposition catalyst unit around the electrode of the atmospheric pressure plasma apparatus of the present invention, the gas generated during discharge may be additionally collected by the separate air inlet as well as around the electrode.
다음, 도 3은 본 발명에 의한 대기압 플라즈마 표면처리방법을 나타낸 플로우 차트이다. 즉, 도 2에 나타낸 본 발명의 대기압 플라즈마 장치의 표면처리 방법은 나타낸 것이다.Next, Figure 3 is a flow chart showing an atmospheric pressure plasma surface treatment method according to the present invention. That is, the surface treatment method of the atmospheric pressure plasma apparatus of this invention shown in FIG. 2 is shown.
즉, 대기압 펌프(8)를 작동시키고 전원을 인가하는 제 1단계; 전극 주변에 국부적으로 저압이 형성되어 외부의 공기가 흡입되는 제 2단계; 상기 외부에서 흡입된 공기를 이용하여 플라즈마가 방전되는 제 3단계; 상기 방전된 플라즈마에 의해 피처리물(4)의 표면처리가 이루어지는 제 4단계; 상기 플라즈마 방전에 의해 반응이 완료된 기체가 기체유동관(6)을 통해 분해촉매부(7)로 유입되는 제 5단계; 및 상기 분해촉매부(7)에서 청정처리된 공기가 대기압 펌프(8)를 통해 배출되는 제 6단계를 포함하여 이루어진다.That is, a first step of operating the atmospheric pressure pump 8 and applying power; A second step in which low pressure is locally formed around the electrode so that outside air is sucked in; A third step of discharging the plasma by using the air sucked from the outside; A fourth step of performing surface treatment of the object 4 by the discharged plasma; A fifth step of introducing the gas from which the reaction is completed by the plasma discharge into the decomposition catalyst unit (7) through a gas flow tube (6); And a sixth step in which the air cleaned in the decomposition catalyst unit 7 is discharged through the atmospheric pressure pump 8.
먼저 대기압 펌프(8)가 작동되면 전극 주변에 0.8∼1기압의 국부음압이 형성되어 외부의 공기가 전극 주변으로 흡입되고, 이 흡입된 공기를 사용하여 방전이 발생된다. 그리고 이 때 형성된 플라즈마에 의해 피처리물(4)의 표면처리, 즉세정, 증착, 에칭(etching), 에슁(ashing)과 같은 공정이 이루어지게 된다. 본 발명의 대기압 플라즈마 장치는 피처리물(4)의 형상이나 크기에 큰 제약을 받지 않기 때문에, PCB기판을 포함하는 전자부품에서부터 산업용 영상장치의 대형 평판까지 표면처리가 가능하고, 고무, 직물, 고분자재료, 유리, 금속과 같은 다양한 재질의 연속 표면처리 공정이 가능하다.First, when the atmospheric pressure pump 8 is operated, a local negative pressure of 0.8 to 1 atm is formed around the electrode so that external air is sucked around the electrode, and discharge is generated using the sucked air. In this case, the plasma formed at this time performs a surface treatment of the object 4, that is, a process such as washing, vapor deposition, etching, and ashing. Atmospheric pressure plasma apparatus of the present invention is not subject to a large restriction on the shape and size of the object (4), it is possible to surface treatment from electronic components including a PCB substrate to a large flat plate of an industrial imaging device, rubber, fabric, Continuous surface treatment of various materials such as polymer materials, glass and metal is possible.
그리고, 플라즈마 방전에 의해 반응이 완료된 기체는 공기와 산소 라디칼과 함께 오존(O3), NOx, CO2와 같은 유해기체를 포함하게 되는데, 이렇게 반응이 완료된 기체는 고전압 전극(1)과 접지전극(2) 부분을 흡입단자로 이용하게 된다.In addition, the gas after the reaction is completed by the plasma discharge contains harmful gases such as ozone (O 3 ), NO x , CO 2 together with the air and oxygen radicals, the reaction is completed is a high voltage electrode (1) and ground The electrode 2 portion is used as the suction terminal.
즉, 도 2에 나타낸 기체의 흐름을 살펴보면, 대기압 펌프(8)에 의해 전극 부분에 국부음압(0.8∼1기압)이 형성되고, 외부의 공기가 전극쪽으로 흡입되면서 플라즈마가 생성된다. 반응이 완료된 기체는 고전압 전극(1)을 둘러싸고 있는 프레임(5) 내부로 흡입되어 기체유동관(6)을 통하여 분해촉매부(7)로 이동하게 되고, 또한 접지전극(2)에 연결된 기체유동관(6)을 통해서도 분해촉매부(7)로 이동하여 청정처리된 후 대기로 배출된다.That is, looking at the gas flow shown in FIG. 2, a local negative pressure (0.8 to 1 atm) is formed at the electrode portion by the atmospheric pressure pump 8, and plasma is generated while the outside air is sucked toward the electrode. After the reaction is completed, the gas is sucked into the frame 5 surrounding the high voltage electrode 1 and moved to the decomposition catalyst unit 7 through the gas flow tube 6, and the gas flow tube connected to the ground electrode 2 ( 6) is also moved to the decomposition catalyst (7) is cleaned and discharged to the atmosphere.
실시예 1은 상기에 설명한 본 발명의 흡입형 기체유동을 이용한 대기압 플라즈마 표면처리장치 및 그 처리방법에 의한 오존(O3)의 발생량을 측정한 것으로서, 표 1은 종래의 대기압 플라즈마 장치(A)와 본 발명의 대기압 플라즈마 장치(B)에 의한 오존 발생량을 전극으로부터 1cm 떨어진 거리에서 일정 간격의 시간을 두고 측정한 값이다.Example 1 measured the amount of ozone (O 3 ) generated by the atmospheric pressure plasma surface treatment apparatus using the suction-type gas flow and the treatment method described above, Table 1 is a conventional atmospheric pressure plasma apparatus (A) And the amount of ozone generated by the atmospheric pressure plasma apparatus B of the present invention at a distance of 1 cm from the electrode at a predetermined interval.
즉, 종래의 기술(A)에 비하여 본 발명(B)에 의한 대기압 플라즈마 표면처리시에 외부로 유출되는 오존의 양은 거의 없음을 알 수 있다.That is, compared with the conventional technique (A), it turns out that the amount of ozone which flows out outside at the time of atmospheric pressure plasma surface treatment by this invention (B) is little.
실시예 2는 본 발명에 의한 플라즈마 표면처리 효율을 알아보기 위하여 고분자 재료인 폴리이미드(polyimide)를 세정(cleaning)처리한 전후의 접촉각 변화를 살펴본 것으로서, 표 2는 종래의 대기압 플라즈마 장치(A)와 본 발명의 대기압 플라즈마 장치(B)에 의한 접촉각 변화를 측정한 결과이다.Example 2 looks at the change in the contact angle before and after cleaning the polyimide (polymer) as a polymer material to determine the plasma surface treatment efficiency according to the present invention, Table 2 is a conventional atmospheric pressure plasma apparatus (A) And change of contact angle by the atmospheric pressure plasma apparatus (B) of the present invention.
접촉각은 표면의 청정도를 알 수 있는 척도로서, 접촉각이 낮을수록 표면이 청정하여 높은 젖음성(친수성, hydrophilic)을 나타낸다. 표 2에 나타난 것과 같이 기존의 표면처리 장치(A)에 의해 폴리이미드를 세정처리한 경우 76도에서 27도로 변화한 반면, 본 발명에 의한 대기압 플라즈마 표면처리 장치(B)를 이용하여 폴리이미드를 세정한 경우에는 76도에서 16도로 접촉각이 낮아진 결과를 나타내어 플라즈마 표면처리 효율이 매우 향상됨을 알 수 있다.The contact angle is a measure of the cleanliness of the surface. The lower the contact angle is, the more clean the surface is, thus showing high wettability (hydrophilic). As shown in Table 2, when the polyimide was cleaned by the conventional surface treatment apparatus (A), the polyimide was changed from 76 degrees to 27 degrees, while the atmospheric plasma surface treatment apparatus (B) according to the present invention was used. In the case of cleaning, the contact angle was lowered from 76 degrees to 16 degrees, indicating that the plasma surface treatment efficiency was greatly improved.
따라서, 본 발명의 흡입형 기체유동을 이용한 대기압 플라즈마 표면처리장치및 그 처리방법은 대기압에서 작동하는 저가의 펌프를 사용하여 외부의 공기가 전극 주변으로 흡입되어 방전이 일어나도록 하며, 전극부분을 흡입단자로 하여 방전에 의해 생성된 유해기체를 흡입함으로써 유해기체가 외부로 유출되지 않도록 한다. 따라서, 외부에 별도의 기체 공급 설비를 갖출 필요가 없는 경제적인 장치 구성이 가능하고, 유해기체 유출에 의한 부식, 변색과 같은 주변기기의 손상을 막을 수 있으며 작업자의 안전을 보장할 수 있다. 또한 전극 주변의 기압이 국부적으로 낮기 때문에 이상방전현상을 제어할 수 있으므로 표면처리 효율이 증대되는 효과가 있다.Therefore, the atmospheric pressure plasma surface treatment apparatus using the suction type gas flow of the present invention and a method of treating the same by using a low-cost pump operating at atmospheric pressure allow external air to be sucked around the electrode to cause discharge, and suction the electrode portion. As a terminal, harmful gases generated by discharge are sucked in to prevent harmful gases from leaking out. Therefore, it is possible to construct an economical device that does not need to have a separate gas supply facility outside, it is possible to prevent damage to peripheral devices such as corrosion, discoloration due to leakage of harmful gases and to ensure the safety of the operator. In addition, since the atmospheric pressure around the electrode is locally low, the abnormal discharge phenomenon can be controlled, thereby increasing the surface treatment efficiency.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100787880B1 (en) * | 2005-11-15 | 2007-12-27 | 김경수 | Apparatus for generating plasma utilizing atmospheric pressure plasma and plasma jet plate |
| KR100773725B1 (en) * | 2005-08-11 | 2008-01-02 | 주식회사 케이씨텍 | Method to cooling electrode of cleaning device for large area substrate |
| KR200447142Y1 (en) * | 2008-02-01 | 2009-12-29 | (주)유이온 | Atmospheric pressure plasma contact lens treatment device with surface modification and sterilization function |
| KR20180015058A (en) * | 2016-08-02 | 2018-02-12 | 주식회사 피글 | Plasma treatment apparatus |
| KR20180015059A (en) * | 2016-08-02 | 2018-02-12 | 주식회사 피글 | Plasma treatment apparatus |
| WO2022026097A1 (en) * | 2020-07-29 | 2022-02-03 | Illinois Tool Works Inc. | Systems and methods for ozone degradation for a plasma treatment system |
| KR102375409B1 (en) * | 2021-11-23 | 2022-03-16 | 한국섬유소재연구원 | Surface treatment method of textile fabric using continuous atmospheric pressure plasma device |
| US11786745B2 (en) | 2016-08-02 | 2023-10-17 | Feagle Co., Ltd | Plasma treatment apparatus |
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| KR970010050B1 (en) * | 1994-04-08 | 1997-06-20 | Foundational Juridical Person | A system for low-pressure plasma spray |
| KR0128230Y1 (en) * | 1994-12-31 | 1998-12-01 | 문정환 | Low pressure chemical deposition system |
| JPH11243079A (en) * | 1998-02-24 | 1999-09-07 | Toshiba Corp | Plasma treatment equipment |
| KR100360854B1 (en) * | 1998-09-25 | 2003-01-15 | 주식회사 엘지이아이 | Plasma used surface modification apparatus |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100773725B1 (en) * | 2005-08-11 | 2008-01-02 | 주식회사 케이씨텍 | Method to cooling electrode of cleaning device for large area substrate |
| KR100787880B1 (en) * | 2005-11-15 | 2007-12-27 | 김경수 | Apparatus for generating plasma utilizing atmospheric pressure plasma and plasma jet plate |
| KR200447142Y1 (en) * | 2008-02-01 | 2009-12-29 | (주)유이온 | Atmospheric pressure plasma contact lens treatment device with surface modification and sterilization function |
| KR20180015058A (en) * | 2016-08-02 | 2018-02-12 | 주식회사 피글 | Plasma treatment apparatus |
| KR20180015059A (en) * | 2016-08-02 | 2018-02-12 | 주식회사 피글 | Plasma treatment apparatus |
| US11786745B2 (en) | 2016-08-02 | 2023-10-17 | Feagle Co., Ltd | Plasma treatment apparatus |
| WO2022026097A1 (en) * | 2020-07-29 | 2022-02-03 | Illinois Tool Works Inc. | Systems and methods for ozone degradation for a plasma treatment system |
| KR102375409B1 (en) * | 2021-11-23 | 2022-03-16 | 한국섬유소재연구원 | Surface treatment method of textile fabric using continuous atmospheric pressure plasma device |
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