KR20040046840A - 실리콘웨이퍼의 표면 근방 결함 분석 방법 - Google Patents
실리콘웨이퍼의 표면 근방 결함 분석 방법 Download PDFInfo
- Publication number
- KR20040046840A KR20040046840A KR1020020074876A KR20020074876A KR20040046840A KR 20040046840 A KR20040046840 A KR 20040046840A KR 1020020074876 A KR1020020074876 A KR 1020020074876A KR 20020074876 A KR20020074876 A KR 20020074876A KR 20040046840 A KR20040046840 A KR 20040046840A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon wafer
- defects
- etching
- chamber
- defect
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 86
- 239000010703 silicon Substances 0.000 title claims abstract description 86
- 238000004458 analytical method Methods 0.000 title claims description 12
- 230000007547 defect Effects 0.000 claims abstract description 67
- 238000005530 etching Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 14
- 239000001301 oxygen Substances 0.000 abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 abstract description 14
- 239000007789 gas Substances 0.000 abstract description 9
- 230000008021 deposition Effects 0.000 abstract description 4
- 238000007689 inspection Methods 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 64
- 238000001556 precipitation Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (3)
- 실리콘웨이퍼를 준비하는 제 1단계와;상기 실리콘웨이퍼를 RI 에칭 장비의 챔버에 장입하고, 상기 챔버 내부를 5E-5 내지 5E-6 토르(torr)의 진공 상태로 조절하는 제 2단계와;상기 챔버 내부에 RI 에칭 가스로 CF4가스를 주입함과 동시에, RI 에칭 타겟(Target)인 상기 실리콘웨이퍼에 에칭 플라즈마 발생 전압을 걸어 주어 상기 실리콘웨이퍼를 RI 에칭하는 제 3단계와;상기 RI 에칭된 실리콘웨이퍼를 파티클 카운터(particle counter) 검사하는 제 4단계와;상기 실리콘웨이퍼의 표면에 나타난 표면 근방 결함을 전자 현미경 또는 광학 현미경으로 검사하는 제 5단계를 포함하는 것이 특징인 실리콘웨이퍼의 표면 결함 분석 방법.
- 제 1항에 있어서,상기 제 3단계에서 상기 실리콘웨이퍼에 걸어주는 에칭 플라즈마 발생 전압은 0.5 내지 2㎾가 되도록 하는 것이 특징인 실리콘웨이퍼의 표면 근방 결함 분석 방법.
- 제 1항에 있어서,상기 제 3단계에서 상기 실리콘웨이퍼의 RI 에칭되는 두께는 약 1 내지 25㎛ 로 하는 것이 특징인 실리콘웨이퍼의 표면 근방 결함 분석 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0074876A KR100501110B1 (ko) | 2002-11-28 | 2002-11-28 | 실리콘웨이퍼의 표면 근방 결함 분석 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0074876A KR100501110B1 (ko) | 2002-11-28 | 2002-11-28 | 실리콘웨이퍼의 표면 근방 결함 분석 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040046840A true KR20040046840A (ko) | 2004-06-05 |
KR100501110B1 KR100501110B1 (ko) | 2005-07-18 |
Family
ID=37342344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0074876A KR100501110B1 (ko) | 2002-11-28 | 2002-11-28 | 실리콘웨이퍼의 표면 근방 결함 분석 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100501110B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108109934A (zh) * | 2017-12-25 | 2018-06-01 | 武汉新芯集成电路制造有限公司 | 检测金属层表面的颗粒的方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01200632A (ja) * | 1988-02-05 | 1989-08-11 | Nippon Telegr & Teleph Corp <Ntt> | 基板表面の平滑化法及び溝の形成法 |
KR950004432A (ko) * | 1993-07-27 | 1995-02-18 | 김주용 | 스퍼터 세정에 의한 웨이퍼 오염입자 제거방법 |
KR19980050972A (ko) * | 1996-12-21 | 1998-09-15 | 양승택 | 리모트 수소 플라즈마를 이용한 금속오염 제거 방법 |
KR100275534B1 (ko) * | 1998-07-31 | 2000-12-15 | 정선종 | 실리콘 기판 표면위의 금속 오염물 제거방법 |
-
2002
- 2002-11-28 KR KR10-2002-0074876A patent/KR100501110B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108109934A (zh) * | 2017-12-25 | 2018-06-01 | 武汉新芯集成电路制造有限公司 | 检测金属层表面的颗粒的方法 |
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Publication number | Publication date |
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KR100501110B1 (ko) | 2005-07-18 |
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