KR20040034871A - Process chamber - Google Patents

Abstract

PURPOSE: A process chamber is provided to comprise a discharge member for simply discharging electric charges accumulated on an upper side of an object, thereby effectively preventing deterioration of an oxide film caused by the accumulated electric charges and preventing a flat board from being damaged. CONSTITUTION: A process chamber(110) defines a sealed reaction area(A) for receiving a flat board(1), and comprises an inlet pipe(112), an exhaust pipe(114), and a vacuum pump(116). The inlet pipe(112) inlets an outer gas material to the reaction area(A). The exhaust pipe(114) exhausts the gas material. A chuck(120) of the reaction area(A) supports the flat board(1) such that the flat board(1) is set on a self upper side, and includes many elevating lift pins for smooth loading/unloading processes. A discharge member(200) discharges electric charges accumulated on a surface of the flat board(1). Before the lift pins lift up the flat board(1), the discharge member(200) discharges the accumulated electric charges.

Description

Process chamber

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a process chamber for processing a transparent substrate or wafer, such as glass, and more particularly, a process or wafer for manufacturing a liquid crystal panel for a liquid crystal display device targeting a transparent substrate. In the semiconductor manufacturing process of the present invention, it is related with the process chamber which deposits a thin film on the surface of the said object or processes the previously deposited thin film.

Recently, with the development of Liquid Crystal Display (LCD), which has various advantages such as thinning, light weight, and low power consumption, the CRT (Cathode-Ray Tube: CRT), which has traditionally represented display devices, has been developed. It has replaced the mainstream of new display devices.

The liquid crystal display device includes a liquid crystal panel for representing an image shown to a user, in particular, which includes two transparent substrates each having an electric field generating electrode on one surface facing each other with a liquid crystal having anisotropic dielectric constant therebetween.

In particular, recently, an active matrix liquid crystal panel in which a plurality of pixels are formed in a liquid crystal panel and each of the pixels is independently controlled using a switching element is widely used. The use of a thin film transistor (TFT) is a well-known thin film transistor liquid crystal display (TFT-LCD).

In this case, a plurality of elements including an electric field generating electrode and a thin film transistor are installed in the form of a thin film on each transparent substrate constituting the liquid crystal panel. A thin film deposition process and an etching process for patterning the same are repeatedly performed.

In more detail, in order to realize a thin film element included in a liquid crystal panel, a thin film deposition process for depositing a semiconductor, conductor or dielectric material as a thin film on the upper surface of a transparent substrate, which is an object, and using a photosensitive material, A photo-lithography process for exposing or concealing the region, an etching process for removing and patterning the selected regions, a washing and drying process for removing residues, and the like.

Meanwhile, the above-described manufacturing process of the liquid crystal panel for a liquid crystal display device may be similarly applied to a semiconductor manufacturing process, that is, a semiconductor manufacturing process known as a large scale integrated circuit (LSI) also uses a wafer which is a substrate. The process includes a thin film deposition process, a photolithography process, an etching process, a cleaning process and a drying process.

In each of these processes, the transparent substrate or wafer, which is the object of each process, is accommodated in a process chamber in which an optimal environment for the process proceeds. For example, in particular, a thin film deposited using plasma is used. A plasma etching chamber which is etched and patterned will be described. Hereinafter, a transparent substrate or a wafer that can be a processing object of the plasma etching chamber is collectively called a flat plate.

1 is a cross-sectional view illustrating a plasma etching chamber as an example of a general process chamber 10, and has a form of a reaction vessel defining a sealed reaction area A in which a flat plate 1 to be processed is placed.

It also includes an inlet pipe 12 for introducing external gaseous material into the reaction zone A, an exhaust pipe 14 through which the reaction zone A can be exhausted, and a vacuum pump 16 installed at the end thereof. In particular, in the reaction zone A, a supporting member such as the chuck 20 is installed to fix the flat plate 1 to its upper surface during the process.

In addition, the chuck 20 includes a plurality of lift pins (not shown) capable of elevating a flat plate to facilitate loading and unloading of an object.

In particular, the plasma etching chamber includes a plasma generation source 30 for generating plasma to the internal reaction region A, which may be classified into a capacitive coupling method or an inductive coupling method.

However, compared to the conventional capacitively coupled plasma (CCP) generation method, the operating pressure is relatively low, but high density plasma can be generated, and the structure of the device is limited. Inductively Coupled Plasma (ICP) generation method that can generate plasma is widely used, which generates the electromagnetic field that changes with time to the region where gas exists and excites gas molecules into the plasma state. Has In this figure, the plasma generation source 30 of the inductive coupling method is illustrated, hereinafter referred to as the plasma generation source 30.

The general plasma generation source 30 includes a first power supply device 32 for outputting a high frequency voltage, for example RF (Radio Frequency) power, and a first electrode mounted in the reaction region A in a state of being connected thereto. 34).

In addition, a bias source 40 for controlling the impact energy of plasma ions is included, which includes a second power supply 42 for outputting a bias voltage, and a first electrode 34 and a flat plate connected thereto. And a second electrode 44 mounted in the chuck 20 to face (1) therebetween.

Accordingly, when a high frequency voltage is output from the first power supply device 32, the first electrode 34 generates an electromagnetic field that changes with time into the reaction region A, and thus, the reaction region A through the inlet pipe 12. The gaseous substance introduced into the exciter is excited in a plasma state. In addition, when the second power supply 42 outputs a bias voltage to the second electrode 44, the plasma ions are accelerated to the second electrode 44 and the flat plate 1.

Through this, the thin film deposited on the surface of the object is etched.

However, there are some problems when treating the plate 1 using a general plasma etching chamber, which is a charge-up in which the surface of the object is charged as the plasma charge density in the reaction zone A increases. This is a phenomenon.

That is, when the semiconductor or conductor thin film pattern is formed on the surface of the object using the plasma etching chamber, it is difficult to precisely control the plasma ion density, and thus the charge density may increase rapidly as the number of charges colliding with each other increases.

The excessively produced charge is accumulated in the semiconductor or conductor thin film pattern, and due to the charge accumulation phenomenon, there is a high possibility that the oxide film or the like is deteriorated due to the charge accumulation phenomenon. In addition, when the lift pin (not shown) forcibly lifts the flat plate 1 by increasing the attraction force between the flat plate 1 and the chuck 20, the phenomenon of cracking or breaking is frequently observed.

In general, a method of discharging the accumulated charge by inserting a discharge probe from the outside before the plate 1 is lifted after completion of the process is used, but this has the disadvantage of lowering the manufacturing yield by delaying the process time. Indicates.

The various problems caused by this charge accumulation are not limited to the above-described plasma etching chamber, but may occur during all processes performed in sputter or chemical vapor deposition (CVD) equipment or other process chambers. However, there is no proper solution for this.

The present invention has been made to solve the above problems, and an object thereof is to provide a more improved process chamber that can solve the problem caused by the charge accumulation on the surface of the plate without a process delay.

1 is a cross-sectional view showing a typical plasma etching chamber

2 is a cross-sectional view showing a plasma etching chamber according to the present invention.

3 is a perspective view showing a part of the discharge member, the chuck and the flat plate according to the present invention;

4 is a perspective view showing a discharge member according to the present invention;

5 is a perspective view showing another example of a discharge member according to the present invention;

<Description of the symbols for the main parts of the drawings>

1: plate 110: process chamber

112: inlet pipe 114: exhaust pipe

116: vacuum pump 120: chuck

130: plasma source 132: first power supply

134: first electrode 140: bias source

142: second power supply 144: second electrode

200: discharge member A: reaction area

In order to achieve the above object, the present invention provides a process chamber defining a closed reaction region in which a plate is accommodated, and a chuck installed in the reaction region to fix the plate seated on its upper surface. )and; A process chamber is provided in the reaction region and includes a discharge member for discharging the charge accumulated in the plate. At this time, the discharge member, the crane (crain) including the other end is fixed to the other end bent to be rotatable so that the other end can be located above the flat plate; It is fixed to the other end of the crane in an electrically grounded state, when the other end of the crane is characterized in that it comprises a conductive ground line hung down to contact the plate. In this case, in particular, the conductive ground line is characterized in that it is made of one selected from a chain form or a plurality of fine metal wires, characterized in that one end of the crane is fixed to the side of the chuck. In addition, the process chamber, the inlet pipe for introducing an external gaseous material into the reaction zone; An exhaust pipe for exhausting gaseous material in the reaction zone; A first electrode mounted in the reaction region to form an electromagnetic field that changes with time; A first power supply for applying a high frequency voltage to the first electrode; A second electrode mounted in the chuck and opposed to the first electrode with the plate interposed therebetween; And a second power supply device for applying a bias voltage to the second electrode, wherein the flat plate is a transparent substrate for a liquid crystal display device or a wafer for semiconductor manufacturing. .

BEST MODE FOR CARRYING OUT THE INVENTION A preferred embodiment of the present invention will be described below with reference to the accompanying drawings.

FIG. 2 is a view showing a process chamber 110 according to the present invention. Similarly to the general case, the process chamber 110 defines a sealed reaction zone A for accommodating a flat plate 1 as an object. An inlet pipe 112 through which external gaseous substances can be introduced into (A), an exhaust pipe 114 for discharging gaseous substances in the reaction zone A, and a vacuum pump 116 disposed at an end thereof. .

In particular, a support member such as the chuck 120 is installed in the reaction zone A to support the flat plate 1 on its upper surface. Preferably, the chuck 120 is not shown, although not shown. It is possible to smoothly load / unload the plate 1 by including a plurality of liftable lift pins to lift the plate 1.

In particular, the process chamber 110 according to the present invention can obtain the most excellent effect when applied to the plasma etching chamber for etching and patterning the thin film deposited by using the plasma, for this purpose to output a high frequency voltage, RF power The plasma generating source 130 includes a first power supply 132 and a first electrode 134 mounted in the reaction region A to generate an electromagnetic field that changes with time.

Also included is a bias source 140 for controlling the impact energy of plasma ions, which is connected to the second power supply 142 for outputting a bias voltage, and is connected between the first electrode 134 and the plate 1. And a second electrode 144 mounted in the chuck 120 to face each other.

The gaseous material introduced into the reaction zone A through the inlet pipe 112 is excited to the plasma by an electromagnetic field that changes with time of the first electrode 134, and a bias voltage is input to the second electrode 144. As a result, the thin film is accelerated toward the flat plate 1 and the second electrode 144 to be pre-deposited on the surface of the flat plate 1.

In this case, in particular, the process chamber 110 according to the present invention further includes a discharge member 200 for discharging the charge accumulated on the surface of the flat plate 1, which is installed in the reaction region A of the process chamber to process After this is completed, the lift pin (not shown) discharges the charge accumulated on its surface before lifting the flat plate 1.

3 is a perspective view illustrating a part of the chuck 120 included in the process chamber 110 and a flat plate 1 mounted on an upper surface thereof, and the discharge member 200 according to the present invention.

In this case, the discharge member 200 includes a crane 210 and a ground line 220 coupled thereto as shown. In more detail, first, the crane 210 includes a fixed end 210a and the other end 210b which is rotatable in a bent state to some extent, so that the other end may be positioned on the upper plate 1. And the ground line 220 is fixed to the other end of the crane 210 is hanged so as to contact the upper surface of the plate (1).

At this time, the ground line 220 is made of an electrically grounded conductive material.

4 to 5 are each a perspective view showing an example of the discharge member according to the present invention, respectively, will be described with reference to FIG.

First, one end 210a of the crane 210 is fixed to one side of the chuck 120, and the other end 210b is bent close to the vertical and has a configuration capable of rotating. Accordingly, the other end by the rotation of the other end (210b) has a radius of rotation that partially overlaps with the plate (1).

In addition, the other end of the crane 210 is fixed to the conductive ground line (220a or 220b) extending down, the conductive ground line (220a or 220b) by the rotation of the other end 210b of the crane 210 is a flat plate ( 1) It is in contact with the upper surface. The conductive ground line 200 is electrically grounded.

Therefore, while the process is in progress, the other end 210b of the crane 210 rotates so that the conductive ground line 220a or 220b hangs in the air in the side of the chuck 120, and a lift pin (not shown) is completed after the process is completed. Before lifting the flat plate 1, the other end 210b of the crane 210 is rotated again so that the other end is positioned on the flat plate 1, and the conductive ground line 200 is in contact with the top surface of the flat plate 1. Thus, the charge accumulated on the upper surface of the flat plate 1 is discharged.

At this time, in particular, the conductive ground line may have a chain shape as indicated by 220a of FIG. 4 or may be formed of a plurality of thin wires as indicated by 220b of FIG. 5. It is obvious to those skilled in the art that the form may be free as long as the purpose is achieved to minimize damage.

Accordingly, the charge accumulated on the upper surface of the plate during the process can be effectively discharged.

Although the plasma etching chamber is taken as an example for better understanding in the above description, the present invention is not limited thereto, and can be applied to all kinds of process chambers, but is also applicable to sputter or chemical vapor deposition chambers. The object to be processed in the process chamber according to the present invention can be applied to both a transparent substrate for a liquid crystal display device or a wafer for semiconductor manufacturing.

The present invention relates to a process chamber, and more particularly, to a process chamber including a discharge member capable of simply discharging the charge accumulated on the upper surface of the object. This can effectively prevent the deterioration of the oxide film and the breakage of the plate caused by the charge accumulation phenomenon, it is possible to proceed smoothly without delay of the process time. In addition, the present invention has the advantage that it can be applied to all kinds of process chambers that can accumulate charge on the surface of the object, in particular has the advantage that can be applied to the semiconductor manufacturing apparatus as well as the liquid crystal display device.

Claims (6)

A process chamber defining a closed reaction zone in which a plate is accommodated. A chuck installed in the reaction zone to fix the plate seated on its upper surface; A discharge member disposed in the reaction region for discharging the charge accumulated on the plate Process chamber comprising The method according to claim 1, The discharge member, A crane having one end fixed and the other end bent to be rotatable so that the other end can be positioned above the flat plate; A conductive ground line fixed to the other end of the crane in an electrically grounded state, and when the other end of the crane is positioned above the plate, the conductive ground line hangs to contact the plate Process chamber comprising The method according to claim 2, The conductive ground line is a process chamber made of one selected from a chain or a plurality of fine metal wires. The method according to claim 2, One end of the crane, the process chamber is fixed to the side of the chuck The method according to claim 1, The process chamber, An inlet pipe for introducing an external gaseous substance into the reaction zone; An exhaust pipe for exhausting gaseous material in the reaction zone; A first electrode mounted in the reaction region to form an electromagnetic field that changes with time; A first power supply for applying a high frequency voltage to the first electrode; A second electrode mounted in the chuck and opposed to the first electrode with the plate interposed therebetween; A second power supply for applying a bias voltage to the second electrode Process chamber that is a plasma etching chamber further comprising The method according to claim 1, The flat plate is a process chamber which is a transparent substrate for a liquid crystal display device or a wafer for semiconductor manufacturing.