KR20040025309A - Plasma process chamber - Google Patents

Abstract

PURPOSE: A plasma process chamber is provided to enhance the uniformity of plasma by distributing uniformly the plasma gas into the inside of a chamber. CONSTITUTION: A plasma process chamber includes a reactor tube(31), a plurality of cores(32), and an inductor coil. The reactor tube(31) is installed at an upper part within a process chamber. The reactor tube(31) includes a doughnut-shaped circular tube for forming a plasma reactor(30). A plurality of holes are uniformly formed on a lower region of the reactor tube. The reactor tube(31) is connected to one or more gas supply tube. The cores(32) are coupled to the reactor tube(31). The inductor coil is wound around the cores. The inductor coil is electrically connected to an RF power unit.

Description

Plasma Process Chamber {PLASMA PROCESS CHAMBER}

The present invention relates to a plasma process chamber, and more particularly, to a plasma process chamber having a structure capable of improving plasma uniformity in a plasma process chamber during a process using plasma.

Plasma sources are widely used in various processes for manufacturing semiconductor devices, such as etching, stripping, cleaning, and the like. The plasma process chamber manufactures a semiconductor device while performing processes such as etching and peeling using plasma gas in a semiconductor manufacturing process.

On the other hand, in the field of plasma generators, stable generation of plasma and high ionization rate have become a constant research subject for those skilled in the art. In addition, technical researches for increasing plasma uniformity have been continuously conducted.

The plasma is uniformly distributed in the plasma process chamber so that the process proceeds to the wafer effectively. In other words, the plasma gas must be sprayed evenly over the entire wafer to obtain a uniform reaction as a whole.

Recently, in order to increase semiconductor production efficiency, wafer size has been increased, and in addition, various technical problems have been generated in the semiconductor manufacturing process, and as one of them, a plasma process chamber capable of obtaining a uniform plasma is required.

Accordingly, an object of the present invention is to provide a plasma process chamber capable of obtaining a uniform plasma uniformity as proposed to solve the above-mentioned problems.

1 is a block diagram showing the overall structure of a plasma process chamber system according to a preferred embodiment of the present invention;

2 schematically shows the structure of a plasma process chamber according to a preferred embodiment of the present invention;

3A and 3B are plan views showing top and bottom structures of the plasma reactor of the plasma process chamber of FIG. 2; And

4A to 5B are diagrams showing modifications of the plasma reactor.

* Description of the symbols for the main parts of the drawings *

5: gas source 10: plasma process chamber

12: substrate 14: wafer

20: vacuum pump 30: plasma reactor

31: reactor tube 32: core

35: inductor coil 36: RF power

According to a feature of the present invention for achieving the object of the present invention as described above, the process gas provided from the gas source is accepted into the plasma reactor and the magnetic field induced by the RF signal provided by the RF power and thereby the secondary electric field The plasma process chamber, which generates a plasma gas and proceeds the process by generating a plasma reaction, comprises: a plurality of circular donut-shaped circular tubes formed on the inner upper portion of the process chamber and constituting the plasma reactor, and uniformly distributed throughout the lower region. A reactor tube having holes therein and having at least one gas supply pipe connected thereto; At least one core coupled to the reactor tube; And an inductor coil wound in a circular manner through the plurality of cores and electrically connected to the RF power.

In this embodiment, the reactor tube is further coupled to the cross-shaped tube across the center, a plurality of holes are formed in the lower region of the cross-shaped tube.

In this embodiment, the reactor tube is provided with a small donut-shaped circular tube inwardly and a plurality of straight tubes connecting them evenly coupled to each other, a plurality of holes in the lower region of the inner circular tube and the plurality of straight tubes Is formed.

In this embodiment, a number of further cores coupled to the inner round tube and another inductor coil along the cores are wound in a circle.

The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to explain more clearly the present invention to those skilled in the art.

(Example)

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a block diagram showing an overall structure of a plasma process chamber system according to a preferred embodiment of the present invention, and FIG. 2 is a diagram schematically showing a structure of a plasma process chamber according to a preferred embodiment of the present invention. 3A and 3B are plan views illustrating upper and lower structures of the plasma reactor of the plasma process chamber of FIG. 2.

Referring to Figure 1, the plasma process chamber 10 according to a preferred embodiment of the present invention generates a plasma through the plasma reactor 30 to proceed with the corresponding process. The plasma reactor 30 is a gas source (5) A process gas for plasma generation is provided, and an RF signal for plasma reaction is provided from the RF power 40. The interior of the plasma process chamber 10 is maintained in a vacuum in a predetermined procedure by the vacuum pump 20, and the plasma gas in the process chamber 10 is discharged to the outside as the vacuum progresses.

2 and 3, more specifically, the plasma reactor 30 is disposed at an upper portion of the process chamber 10, and at the lower portion, the substrate 12 on which the wafer 14 for processing is to be placed is disposed. Is composed.

The plasma reactor 30 has a reactor tube 31 having a large donut shape. The reactor tube 31 is formed by uniformly distributing a plurality of holes 33 on the lower surface of less than half. At least one gas input tube 34 is uniformly distributed in the upper portion, and the gas input tube 34 is connected to the gas source 5 through the upper portion of the process chamber 10.

At least one core 32 is uniformly distributed and mounted in the reactor tube 31, and an inductor coil 35 is formed to be wound while passing through the inside of each core 32 to form a circle as a whole. Inductor coil 35 is electrically connected to RF power 40.

The plasma generation process of the plasma reactor 30 configured as described above is as follows. The process gas input from the gas source 5 enters the reactor tube 31 through the gas input tube 34. At this time, an RF signal is inputted from the RF power 40 to the inductor coil 35 to generate an induction magnetic field, and 2 to the process gas filled in the reactor tube 31 by the magnetic field enhanced by the plurality of cores 32. The secondary electric field is led in a circle along the reactor tube 31. As a result, the process gas causes a plasma reaction to generate the plasma gas. The plasma gas generated inside the reactor tube 31 descends evenly through the plurality of holes 31 to the lower substrate 12 of the process chamber 10.

4A to 5B are diagrams showing modifications of the plasma reactor.

4A and 4B, in this variant the reactor tube 31a has a deformed shape. That is, the reactor tube (31a) has a donut shape, but the cross-shaped tube 36 crossing the center is coupled. In addition, a plurality of holes are formed in the lower region of the cross pipe 36.

5A and 5B, in another variant, the reactor tube 31b has another modified shape. That is, the reactor tube 31b is provided with a small donut-shaped circular tube 38 inside the donut-shaped circular tube, and a plurality of straight tubes 37 connecting them are evenly coupled to each other. A plurality of holes are also formed in the lower regions of the inner circular pipe 38 and the plurality of straight pipes 37. A plurality of cores 39 are also connected to the inner round tube 38, and another inductor coil is wound along the cores 39, and the inductor coil is electrically connected to another RF power 42. have.

In another variant, the embodiment is constructed by using two inductor coils and two RF powers, but it is common practice in the art to connect inductor coils in series or in parallel and to use one RF power. The technicians will know well.

The plasma process chamber 10 of the present invention has a structural feature that allows the plasma reactor 30 to enter the wafer 14 while the generated plasma gas is evenly distributed throughout the interior of the process chamber 10.

As described above, the configuration and operation of the plasma process chamber according to a preferred embodiment of the present invention have been shown in accordance with the above description and drawings, but this is merely described, for example, without departing from the spirit of the present invention. It will be appreciated by those skilled in the art that various changes and modifications are possible.

According to the present invention as described above, the process chamber can ensure a more uniform uniformity when the plasma gas is evenly distributed in the chamber and incident on the wafer. In particular, even during the process of processing a large wafer, a plasma evenly distributed over the entire wafer can be obtained.

Claims (4)

A plasma process chamber in which a process gas provided from a gas source is received into a plasma reactor and a plasma reaction is generated by a magnetic field induced by an RF signal provided by RF power and a secondary electric field thereby obtaining a plasma gas. : A reactor tube composed of a donut-shaped circular tube which is generally formed in the upper part of the process chamber and constitutes a plasma reactor, the reactor tube having a plurality of holes uniformly distributed in the lower area and having at least one gas supply pipe connected thereto; At least one core coupled to the reactor tube; And an inductor coil wound circularly through the plurality of cores and electrically connected to the RF power. According to claim 1, The reactor tube is a plasma process chamber, characterized in that the cross-cross tube is further coupled to cross the center portion, a plurality of holes are formed in the lower region of the cross-shaped tube. According to claim 1, The reactor tube is provided with a small donut-shaped circular tube inward, and a plurality of straight tubes connecting them are evenly coupled to each other, and a plurality of holes are formed in the lower region of the inner circular tube and the plurality of straight tubes. Plasma process chamber. The method of claim 3, wherein And a plurality of further cores coupled to the inner circular tube and another inductor coil wound around the cores in a circular shape.