KR101139815B1 - Electrode assembly with frequency feeding equally and plasma reactor having the same - Google Patents

Abstract

The present invention relates to an electrode assembly having a uniform frequency supply structure and a plasma reactor having the same. In the electrode having a uniform frequency supply structure of the present invention is installed in the plasma reactor and supplied with a radio frequency power for plasma discharge, the electrode is a plurality of power input terminals for distributing the radio frequency power supplied Evenly supplied with radio frequency power. According to the electrode having a uniform frequency supply structure and the plasma reactor having the same according to the present invention, the radio frequency can be uniformly supplied throughout the electrode to uniformly generate a large area of plasma inside the plasma reactor. In addition, the plasma may be uniformly generated depending on the shape and size of the substrate to be processed. In addition, the processing efficiency of the substrate may be improved by using a grounded gas supply unit and an electrode supplied with a uniform radio frequency. In addition, by using a capacitor or an inductor to uniformly form an electric field can generate a plasma uniformly.

Description

ELECTRODE ASSEMBLY WITH FREQUENCY FEEDING EQUALLY AND PLASMA REACTOR HAVING THE SAME

The present invention relates to an electrode assembly having a uniform frequency supply structure and a plasma reactor having the same, specifically, to uniformly supply a radio frequency to an electrode provided inside the plasma reactor to form a uniform large area plasma. An electrode assembly having a frequency supply structure and a plasma reactor having the same.

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. Active gases are widely used in various fields and are used in various semiconductor manufacturing processes for manufacturing devices such as integrated circuit devices, liquid crystal displays, solar cells, etc., for example, etching, deposition, cleaning, and ashing. It is variously used for ashing.

There are a number of plasma sources for generating plasma, and the representative examples are capacitive coupled plasma and inductive coupled plasma using radio frequency. Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control. However, when the capacitively coupled electrode is enlarged in order to process an enlarged substrate, the electrode may be deformed or damaged by deterioration of the electrode. In this case, the electric field strength may be uneven, which may result in uneven plasma density and contaminate the inside of the reactor. In the case of an inductively coupled plasma source, it is also difficult to obtain a uniform plasma density when the area of the induction coil antenna is increased.

In recent years, the semiconductor manufacturing industry has been further improved due to various factors such as ultra miniaturization of semiconductor devices, the enlargement of silicon wafer substrates or substrates to be processed such as glass or plastic substrates for manufacturing semiconductor circuits, and the development of new materials to be processed. Plasma treatment technology is required. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area substrates. Furthermore, various semiconductor manufacturing apparatuses using lasers have been provided. Semiconductor manufacturing processes using lasers have been widely applied to various processes such as deposition, etching, annealing, cleaning, and the like on a substrate to be processed. In the case of a semiconductor manufacturing process using such a laser, the above-described problems exist.

The enlargement of the substrate to be processed causes the enlargement of the entire production equipment. Larger production facilities increase the overall plant area, resulting in increased production costs. Therefore, there is a need for a plasma reactor and a plasma processing system capable of minimizing the installation area. In particular, in the semiconductor manufacturing process, productivity per unit area is one of the important factors affecting the price of the final product.

SUMMARY OF THE INVENTION An object of the present invention is to provide an electrode assembly having a uniform frequency supply structure capable of improving the processing efficiency of a substrate by forming a uniform and large-area plasma inside a plasma reactor by an electrode supplied with a uniform radio frequency power; It is to provide a plasma reactor having this.

One aspect of the present invention for achieving the above technical problem relates to an electrode having a uniform frequency supply structure and a plasma reactor having the same. Electrode assembly having a uniform frequency supply structure of the present invention is installed in the plasma reactor and the electrode supplied with radio frequency power for plasma discharge, the electrode is a plurality of power input terminals for receiving the radio frequency power distributed It is supplied with a radio frequency power uniformly.

In one embodiment, the electrode comprises a plurality of openings; A center power input terminal positioned at the center of the electrode to receive a radio frequency; And a peripheral power input terminal positioned at a periphery of the electrode to receive a radio frequency.

In one embodiment, one of a capacitor or an inductor is connected to the center power input terminal and the peripheral power input terminal.

Plasma reactor having an electrode assembly having a uniform frequency supply structure according to the present invention comprises a reactor body having a substrate support for supporting a substrate to be processed; A first electrode provided in the reactor body; And a second electrode disposed between the first electrode and the substrate support in parallel with the substrate support and having a plurality of power input terminals.

In one embodiment, the plasma reactor further comprises a power supply source for supplying radio frequency power to the plurality of power input terminals.

In an embodiment, the power input terminal may include a central power input terminal positioned at a center of the second electrode and receiving a radio frequency; And a peripheral power input terminal positioned at a periphery except for the center of the second electrode to receive a radio frequency.

In one embodiment, the first electrode is grounded to a gas supply for supplying a process gas into the reactor body.

In example embodiments, the second electrode may include a plurality of openings to supply process gas to the substrate.

In one embodiment, one of a capacitor or an inductor is connected to the center power input terminal and the peripheral power input terminal.

In one embodiment, the plasma reactor includes a third electrode disposed below the first electrode to generate a discharge with the second electrode.

In one embodiment, the plasma reactor includes an electrode assembly in which a plurality of the second electrodes are planarly disposed.

In one embodiment, the plasma reactor includes a current distribution circuit for receiving the radio frequency power provided from the power supply source to the plurality of second electrodes to adjust and distribute the current balance.

According to the electrode having a uniform frequency supply structure and the plasma reactor having the same according to the present invention, the radio frequency can be uniformly supplied throughout the electrode to uniformly generate a large area of plasma inside the plasma reactor.

In addition, the plasma may be uniformly generated depending on the shape and size of the substrate to be processed.

In addition, the processing efficiency of the substrate may be improved by using a grounded gas supply unit and an electrode supplied with a uniform radio frequency.

In addition, by using a capacitor or an inductor to uniformly form an electric field can generate a plasma uniformly.

1 is a cross-sectional view showing a plasma reactor according to an embodiment of the present invention.
2 is a perspective view illustrating a power supply line connected to an electrode plate of an electrode assembly.
3 is a perspective view illustrating a state in which a gas supply unit is further installed in the electrode assembly shown in FIG. 2.
4 and 5 are a perspective view and a plan view showing an electrode plate according to an embodiment of the present invention.
6 and 7 are plan views illustrating electrode plates having openings of various sizes.
8 is a plan view illustrating an electrode assembly including an electrode plate having openings of various sizes.
9 and 10 are a perspective view and a plan view showing an electrode plate according to another embodiment.
11 and 12 are plan views illustrating electrode plates according to other exemplary embodiments having openings having various sizes.
13 to 20 are a perspective view and a plan view showing an electrode plate having various types of openings.
21 and 22 illustrate a power supply structure for uniformly supplying current to an electrode plate of an electrode assembly.
FIG. 23 is a cross-sectional view illustrating a state in which a gas supply unit is installed by adjusting a distance from an electrode assembly.
24 to 29 illustrate a state in which an inductor or a capacitor is connected to the center power input terminal and the peripheral power input terminal in various ways.
30 is a diagram illustrating a state in which a plurality of electrode plates configured in an electrode assembly is connected to a current balance distribution circuit.
31 and 32 are views illustrating a state in which a plurality of power sources are connected to a plurality of electrode plates.
33 is a sectional view showing a plasma reactor according to another embodiment of the present invention.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shapes and the like of the elements in the drawings can be exaggeratedly expressed to emphasize a clearer description. It should be noted that the same members in each drawing are sometimes shown with the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a cross-sectional view showing a plasma reactor according to an embodiment of the present invention.

As shown in FIG. 1, the preferred plasma reactor 10 of the present invention is composed of a reactor body 11, a gas supply 20 as a first electrode and an electrode assembly 30 as a second electrode. The reactor body 11 is provided with a substrate support 12 on which a substrate 13 to be processed is placed, and a vacuum pump (not shown) is connected to the bottom thereof. The gas supply unit 20 is configured above the reactor body 11. The gas supply unit 20 supplies a gas provided from a gas supply source (not shown) into the reactor body 11. The electrode assembly 30 is provided inside the reactor body 11 to be parallel to the substrate support 12. The radio frequency power generated from the power supply 40 is supplied to the electrode assembly 30 through the impedance matcher 41 to induce the plasma inside the plasma reactor 10. Plasma treatment is performed on the substrate 13 by the plasma generated inside the plasma reactor 10.

The plasma reactor 10 is provided with a support body 12 on which the reactor body 11 and the substrate 13 to be processed are placed. The reactor body 11 can be made of a metallic material such as aluminum, stainless steel, copper. Or may be rewritten with coated metal, for example anodized aluminum or nickel plated aluminum. Or it may be rewritten as a refractory metal. As an alternative, it is also possible to reconstruct the reactor body 11 in whole or in part with an electrically insulating material such as quartz, ceramic. As such, the reactor body 11 may be made of any material suitable for carrying out the intended plasma process. The structure of the reactor body 11 may have a structure suitable for uniform generation of the plasma, for example, a circular structure or a square structure, or any other structure depending on the substrate 13 to be processed.

The substrate 13 to be processed is, for example, substrates such as wafer substrates, glass substrates, plastic substrates, etc. for the manufacture of various devices such as semiconductor devices, display devices, solar cells, and the like.

The gas supply unit 20 is grounded and installed on the upper portion of the electrode assembly 30. The gas supply unit 20 is connected to a gas supply source (not shown) and supplies the process gas supplied from the gas supply source (not shown) into the reactor body 11 through the plurality of gas injection ports 23. The baffle 22 is provided in the gas supply unit 20 for uniform distribution of the process gas.

2 is a perspective view illustrating a power supply line connected to an electrode plate of an electrode assembly according to a preferred embodiment of the present invention, and FIG. 3 is a perspective view illustrating a state in which a gas supply unit is further installed in the electrode assembly illustrated in FIG. 2.

As shown in FIGS. 1, 2 and 3, an electrode assembly 30 is provided inside the reactor body 11. The electrode assembly 30 is installed inside the reactor body 11 to be parallel to the substrate support 12. In the electrode assembly 30 according to the present invention, a plurality of electrode plates 32 are planarly coupled. The electrode assembly 30 may be formed by adjusting the number of electrode plates 32 according to the size of the substrate 13 to be processed. In this case, the electrode assembly 30 includes an insulating frame 31 that electrically insulates the plurality of electrode plates 32. The electrode assembly 30 is changed in shape depending on the shape of the substrate 13 to be treated in order to increase the processing efficiency of the substrate 13. That is, when processing a rectangular glass may be formed in a square shape, when processing a circular wafer may be formed in a circular shape.

Hereinafter, the electrode plate 32 will be described. The electrode plate 32 corresponds to the second electrode in the plasma reactor 10 similarly to the electrode assembly 30.

The electrode plate 32 includes a plurality of openings 34, a center power input terminal 35, and a peripheral power input terminal 36 provided at predetermined intervals. Plasma formed between the electrode assembly 30 and the gas supply unit 20 falls on the substrate 13 through the opening 34 to treat the substrate 13. The central power input terminal 35 is located at the center of the electrode plate 32. The peripheral power input terminal 36 is located at each corner of the electrode plate 32. Here, the uniformity of the radio frequency provided to the electrode plate 32 may be adjusted by adjusting the number of peripheral power input terminals 36. The shape of the electrode plate 32 varies depending on the shape of the substrate 13 to be treated in order to increase the processing efficiency of the substrate 13. That is, when processing a rectangular glass may be formed in a square shape, when processing a circular wafer may be formed in a circular shape.

The center power input terminal 35 and the plurality of peripheral power input terminals 36 are connected to the power supply source 40 by a power supply line 37. For example, four electrode plates 32 are combined to form the electrode assembly 30. The first feed line 37a having one feed point is branched to the second feed line 37b so as to receive radio frequency power from the power supply source 40 and to supply the four electrode plates 32. The four second feed lines 37b are further branched to the third power feed line 37c connected to the center power input terminal 35 and the peripheral power input terminal 36 formed on each electrode plate 32. That is, one feed line 37 is branched into a tree structure by the number of electrode plates 32 for supplying frequency power. Here, the feed line 37 has an electrically insulating structure at a portion in contact with the gas supply unit 20.

Referring back to FIG. 1, the substrate support 12 for supporting the substrate 13 to be processed is provided in the reactor body 11. The substrate support 12 is connected and biased to a bias power supply 45. An impedance matcher 49 is connected between the substrate support 12 and the bias power source 45. Substrate support 12 may include an electrostatic chuck. Alternatively, the substrate support 12 may include a heater. In addition, in the substrate support 12 on which the substrate 13 is placed, two bias power sources 45 supplying different radio frequency powers may be electrically connected and biased through the impedance matcher 49. The dual bias structure of the substrate support 12 facilitates plasma generation inside the plasma reactor 10, and further improves plasma ion energy control to improve process productivity. Alternatively, it may be modified to a single bias structure. Alternatively, the support 12 may be modified to have a zero potential without supplying a bias power supply.

The electrode plate 32 provided in the electrode assembly 30 is driven by receiving the radio frequency power generated from the power supply 40 through the impedance matcher 41 to be capacitively coupled to the inside of the reactor body 11. Induce. The power supply 40 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher. In addition, the electrode plate 32 may be connected to a plurality of power sources 40a and 40b. In this case, each of the power supply sources 40a and 40b may supply the same radio frequency or may supply different radio frequencies.

4 and 5 are a perspective view and a plan view showing an electrode plate according to an embodiment of the present invention, Figures 6 and 7 is a plan view showing an electrode plate having openings of various sizes.

As shown in FIGS. 4 and 5, the electrode plate 32 may be formed in a mesh shape in which rectangular openings 34 are arranged in a matrix form. Although not shown in the drawings, the opening 34 may be variously formed in a circle or a polygon. 6 and 7, the opening 34 may be formed in various sizes. In an embodiment of the present invention, the size of the opening 34 may be formed to be smaller from the outside of the electrode plate 32 toward the inside, and may be formed to increase from the outside of the electrode plate 32 to the inside. have. As such, the size of the opening 34 may be differently controlled to adjust the amount of plasma passing through the opening 34, thereby controlling the processing efficiency of the central region and the peripheral region of the substrate 13.

8 is a plan view illustrating an electrode assembly including an electrode plate having openings of various sizes.

As illustrated in FIG. 8, the electrode assembly 30 may be formed of a plurality of electrode plates 32 having different sizes of the opening 34. For example, the opening 34 of the electrode plate 32 provided outside the electrode assembly 30 is smaller in size than the opening 34 of the electrode plate 32 installed inside. That is, since the size of the opening 34 gradually increases from the outside to the inside of the electrode assembly 30, the processing efficiency of the central region and the peripheral region of the substrate 13 to be processed may be differently adjusted. A plurality of electrode plates 32 are provided such that the size of the opening 34 gradually increases from the outside to the inside of the electrode assembly 30.

9 and 10 are a perspective view and a plan view showing an electrode plate according to another embodiment, and FIGS. 11 and 12 are plan views showing an electrode plate according to another embodiment having openings of various sizes.

9 and 10, a plurality of openings 34 provided in a slit shape may be formed in the electrode plate 32 in a concentric rectangular shape. In the present invention, the rectangular electrode plate 32 is separated diagonally, and the opening 34 in the form of a slit is formed in a concentric rectangular shape in each of the separated regions. In addition, as illustrated in FIGS. 11 and 12, the size of the opening 34 may be variously formed. In an embodiment of the present invention, the opening 34 may be formed to increase in size from the outside of the electrode plate 32 toward the inside, and may be formed to become smaller from the outside of the electrode plate 32 toward the inside. have. As such, the size of the opening 34 may be differently controlled to adjust the amount of plasma passing through the opening 34, thereby controlling the processing efficiency of the central region and the peripheral region of the substrate 13.

13 to 20 are a perspective view and a plan view illustrating an electrode plate provided with various types of openings.

13 to 20, the electrode plate 32 is provided with a plurality of openings 34 of various forms. The electrode plate 32 may have an opening 34 arranged in a concentric circle shape. In addition, the slit-shaped openings 34 may be arranged in parallel or radially to form the electrode plate 32. Here too, as described above, the size of the opening 34 may be varied.

The electrode plate 32 provided in the electrode assembly 30 may be formed in various forms as described above. Openings 34 of various shapes and sizes allow the plasma to be produced efficiently.

21 and 22 illustrate a power supply structure for uniformly supplying current to an electrode plate of an electrode assembly.

As shown in FIGS. 21 and 22, the plurality of electrode plates 32 provided in the electrode assembly 30 are supplied with radio frequency by branched feed lines. The frequency power generated from the power supply 40 is provided to the plurality of electrode plates 32 through the impedance matcher 41. In this case, the frequency power supplied to the electrode plate 32 may be uniformly supplied through a current balancing circuit (not shown). In addition, as shown in the figure, it is also possible to supply a current evenly by installing the feed line in parallel adjacent to the current balance circuit. For example, the power supply 40 is connected to the first node 60a (N001). The first node 60a (N001) is connected to the first feed line 62, and the first feed line 62 branches from the second node 62a to two second feed lines 64. Again, the second feed line 64 is branched from the third node 64a (N010) to the two third feed line 66, and the remaining second feed line 64 is connected to the fourth node 64b ( A branch is made from N020 to two fourth feed lines 68. Here, the first node 60a is supplied with a radio frequency from the power supply source 40, and the remaining nodes 62a, 64a, and 64b are virtual feed points to which radio frequencies are input. In this way, the feed line is branched to form 16 feed points (N111, N112, N121, N122, N211, N212, N221, N222, N411, N412, N421, N422, N311, N312, N321, N322) at the ends. . The feed point at the end is connected to the center power input terminal 35 and the peripheral power input terminal 37 of the electrode plate 32, respectively. In other words, one first feed line 62 branches from one node to two feed lines 60. The branched power supply line 60 is connected to the electrode plate 32 or repeatedly connected to the two power supply lines 60 at one node. Here, the branched feed line 60 is installed adjacent to each other in parallel and uniformly supplied to each feed line by the interaction of the current flowing in each feed line. Therefore, the feed points N111, N112, N121, N122, N211, N212, N221, N222, N411, N412, N421, N422, N311, N312 connected to each electrode plate 32 by a feed line provided adjacent to each other in parallel. , N321 and N322, the same amount of current is guaranteed. As shown in FIG. 18, two feed lines 60 are installed adjacent to each other in parallel to supply current to each feed line in a balanced manner. Here, the branched feed line may be supplied with a radio frequency through a current balancing circuit. The feed line may be made of a material capable of providing a radio frequency power source, and may be formed of a coaxial cable.

In addition, by installing a magnetic core (not shown) so that the feed line 60 is installed in parallel adjacent to the inside so that the current flows in a balanced manner while sharing a magnetic field by the magnetic core. In addition, the power supply line 60 may be wound around the magnetic core to provide a balanced current. In addition, a capacitor (not shown) for compensating for the leakage current may be connected between each electrode plate 32 and the power supply source 40.

FIG. 23 is a cross-sectional view illustrating a state in which a gas supply unit is installed by adjusting a distance from an electrode assembly.

As shown in FIG. 23, the gas supply unit 20 may be installed by adjusting the height of the electrode assembly 30. Since the heights h1 and h2 of the gas supply unit 20 with respect to the electrode assembly 30 affect the discharge between the electrode plate 32 and the gas supply unit 20, the heights h1 and h2 are adjusted to be high or low. To induce plasma.

24 to 29 illustrate a state in which an inductor or a capacitor is connected to the center power input terminal and the peripheral power input terminal in various ways.

As shown in FIGS. 24 to 29, the center power input terminal 35 and the peripheral power input terminal 36 of the electrode plate 32 are connected through a feed line 37 to which a capacitor 63 or an inductor 65 is connected, respectively. Receive radio frequency. In this case, the capacitor 63 and the inductor 65 may be installed together at the same input terminal. The capacitor 63 and the inductor 65 act as a filter and have an electrical effect on the radio frequency power supply. The radio frequency supplied from the power source 40 is electrically influenced by the capacitor 63 and the inductor 65. This makes the intensity of the electric field induced in the electrode plate 32 uniform and leads to a uniform plasma into the reactor body. As shown in the figure, the capacitor 63 or the inductor 65 may be connected to either the center power input terminal 35 or the peripheral power input terminal 36. Of course, the capacitor 63 or the inductor 65 may be connected to both the center power input terminal 35 and the peripheral power input terminal 36 (four peripheral power input terminals 36). Here, the capacitor 63 and the inductor 65 may be connected to the center power input terminal 35 or the peripheral power input terminal 36 separately from the power supply line 37 provided with the radio frequency power.

30 is a diagram illustrating a state in which a plurality of electrode plates configured in an electrode assembly is connected to a current balance distribution circuit.

As shown in FIG. 30, the radio frequency power generated from the power supply 40 is provided with a plurality of electrode plates 32 configured in the electrode assembly 30 through the impedance matcher 41 and the current balance distribution circuit 50. Is supplied. That is, the currents supplied to the plurality of electrode plates 32 through the current balance distribution circuit 50 are automatically balanced.

31 and 32 are views illustrating a state in which a plurality of power sources are connected to a plurality of electrode plates.

As shown in FIG. The plurality of electrode plates 32 may be formed in one group, and the power supply source 40 and the impedance matcher 41 may be provided for each group. In this case, the power supplies 40 connected to each group may provide the same frequency or different frequencies. In addition, as shown in FIG. 32, a power source 40 may be separately connected to each of the plurality of electrode plates 32 to supply radio frequency power. By separating the electrode plate 32 by a group or by connecting the power supply 40 to each electrode plate 32 separately, the separated power supply 40 can be easily replaced, thereby making maintenance easy.

33 is a sectional view showing a plasma reactor according to another embodiment of the present invention.

As shown in FIG. 33, the third electrode plate 70 is further provided to form the plasma reactor 10a. The third electrode plate 70 is provided below the gas supply unit 20 that is the first electrode. The third electrode plate 70 is connected to two power sources 75 separately from the electrode assembly 30 and is supplied with the impedance of the radio frequency power through the impedance matcher 77. Discharge is generated between the electrode assembly 30 and the second electrode plate 70 to form a uniform large area plasma in the plasma reactor 10a.

10, 10a: plasma reactor 11: reactor body
12: substrate support 13: substrate to be processed
20: gas supply part 22: baffle
30: electrode assembly 32: electrode plate
34: opening 35: center power input terminal
36: peripheral power input stage 37: feed line
37a: first feed line 37b: second feed line
37c: third feed line 40, 40a, 40b: power supply source
41, 49: impedance matcher 45: bias power supply
50: current balance distribution circuit 60: feed line
60a, 62a, 64a, 64b: first, two, three, four nodes
62, 64, 66, 68: 1st, 2nd, 3rd, 4th feeding line 63: Capacitor
65: inductor 70: third electrode plate
75: power source 77: impedance matcher

Claims (12)

In the electrode assembly which is provided inside the plasma reactor having a substrate support for supporting the substrate to be processed to receive radio frequency power to generate a plasma discharge,
A plurality of electrode plates installed in a plane parallel to the substrate support and having a plurality of openings and a plurality of power input terminals;
An insulating frame provided between the plurality of electrode plates; And
Electrode assembly having a uniform frequency supply structure, characterized in that it comprises a feed line for distributing and supplying frequency power to a plurality of power input terminals respectively provided in the plurality of electrode plates. The method of claim 1,
The plurality of power input terminals of the electrode plate
Located in the center of the electrode plate and the center power input terminal for receiving radio frequency power and
An electrode assembly having a uniform frequency supply structure, characterized in that it comprises a peripheral power input terminal is located in the periphery of the electrode plate to receive a radio frequency power. The method of claim 1,
The feed line is
It includes a plurality of branch nodes and two feed lines branched from the branch node,
2. The electrode assembly having a uniform frequency supply structure, wherein two feed lines which are branched are installed adjacent to each other in parallel. A reactor body having a substrate support for supporting a substrate to be processed;
An electrically grounded gas supply unit constituting a ceiling of the reactor body;
A plurality of electrode plates installed in a plane parallel to the substrate support between the gas supply unit and the substrate support and having a plurality of openings and a plurality of power input terminals, an insulating frame provided between the plurality of electrode plates, and the gas supply An electrode assembly having a feeding line penetrating through a portion and having a branch structure to a plurality of power input terminals respectively provided on the plurality of electrode plates to distribute and supply frequency power; And
And a first power supply source for supplying a radio frequency to the plurality of electrode plates through the feed line. delete The method of claim 4, wherein
The plurality of power input terminals of the electrode plate
Located in the center of the electrode plate and the center power input terminal for receiving radio frequency power and
Plasma reactor characterized in that it comprises a peripheral power input terminal is located in the periphery of the electrode plate to receive radio frequency power. delete delete delete The method of claim 4, wherein
An electrode plate installed under the gas supply unit;
And a second power supply for supplying radio frequency power to the electrode plate. delete The method of claim 4, wherein
The feed line is
It includes a plurality of branch nodes and two feed lines branched from the branch node,
Two feed line is branched plasma reactor, characterized in that installed in parallel.

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