KR20040023232A - Apparatus for manufacturing semiconductor - Google Patents
Apparatus for manufacturing semiconductor Download PDFInfo
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- KR20040023232A KR20040023232A KR1020020054914A KR20020054914A KR20040023232A KR 20040023232 A KR20040023232 A KR 20040023232A KR 1020020054914 A KR1020020054914 A KR 1020020054914A KR 20020054914 A KR20020054914 A KR 20020054914A KR 20040023232 A KR20040023232 A KR 20040023232A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Health & Medical Sciences (AREA)
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Abstract
Description
본 발명은 반도체 제조 장치에 관한 것으로서, 보다 상세하게는 매엽식 확산 챔버에서의 공정 수행을 위한 웨이퍼 로딩/언로딩 중에 내부로 외기의 침입이 방지되도록 하는 반도체 제조 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a semiconductor manufacturing apparatus for preventing intrusion of outside air into the wafer during wafer loading / unloading for performing a process in a single wafer diffusion chamber.
일반적으로 확산 공정은 필요한 막질을 얻기 위하여 행하게 되며, 어닐 공정은 어떤 공정을 진행한 후 반도체 디바이스의 결정성 회복 및 물성 안정화를 위하여 행하게 된다. 이와 같은 공정들은 온도, 가스, 압력, 그리고 반응 시간 등의 요인(parameter)들을 조절하므로써 필요로 하는 막질을 얻게 된다.In general, the diffusion process is performed to obtain the necessary film quality, and the annealing process is performed for crystallinity recovery and physical property stabilization of the semiconductor device after a certain process. These processes achieve the required film quality by controlling parameters such as temperature, gas, pressure, and reaction time.
확산 공정은 가스의 종류에 따라서 원하는 막질을 형성하고, 반응 시간에 따라서 막질의 두께를 결정하게 된다. 공정에 필요한 온도 및 압력 등의 조건을 형성한 후 반응에 필요한 가스를 주입하여 막을 형성하거나, 막에 불순물을 확산시키게 되는데 이때 가스(불순물 소스 가스)를 주입하는 동시에 배출시켜 공정을 진행하게 되므로 챔버 내에 분해된 가스가 정체되는 시간은 매우 짧다. 따라서 공정 수행 시간은 매우 길어질 수 밖에 없고, 사용되는 가스의 량 또한 많아지게 된다.The diffusion process forms a desired film quality according to the type of gas, and determines the thickness of the film quality according to the reaction time. After forming conditions such as temperature and pressure required for the process, the gas required for the reaction is injected to form a film, or impurities are diffused into the film. At this time, the gas (impurity source gas) is injected and discharged to proceed the process. The time that the decomposed gas is stagnated is very short. Therefore, the process run time is very long, and the amount of gas used is also increased.
이때 챔버의 내부 온도를 높여 공정을 진행하게 되면, 가스의 분해가 빠르고 분해 량을 증가시켜 공정 시간을 단축시킬 수 있지만, 이와 같은 방법은 반도체 디바이스가 고집적되면서 얕은 정션(shallow junction) 등이 요구되어 그 사용이 제한되고 있다.At this time, if the process is performed by increasing the internal temperature of the chamber, gas decomposition is fast and the amount of decomposition can be increased to shorten the process time. However, such a method requires a shallow junction and the like as the semiconductor device is highly integrated. Its use is limited.
한편 최근의 어닐 공정은 반도체 디바이스의 정전용량(capacitance)을 증가시키기 위하여 매엽식 또는 수직식 퍼니스(vertical furnace)를 사용하고 있다.Recent annealing processes, on the other hand, use single or vertical furnaces to increase the capacitance of semiconductor devices.
특히 매엽식의 Mattson RTP(Rapid Thermal Process)설비에서는 도 1에서와 같이 종래의 펌프를 이용한 로드락 기능이 있는 설비에 비해서 상대적으로 산소(O2)의 농도가 높아 공정 불량을 초래하게 될 위험이 높다. 즉 로(furnace)내로부터 웨이퍼를 로딩 또는 언로딩하기 위해서는 로의 도어를 개폐시켜야만 하는데 특히 도어의 개방시 외기가 유입되면서 로의 내부에는 산소(O2) 분위기가 조성된다.In particular, the single-leaf Mattson RTP (Rapid Thermal Process) facility has a higher concentration of oxygen (O 2 ) as compared to a facility having a load lock function using a conventional pump as shown in FIG. high. In other words, in order to load or unload wafers from a furnace, the door of the furnace must be opened and closed. In particular, when the door is opened, outside air flows into the furnace to create an oxygen (O 2 ) atmosphere.
그러나 Mattson RTP 설비에서 Ti/TiN 어닐을 위한 RTN(Rapid Thermal Nitridation)공정 수행에는 외기 유입에 따른 산소(O2) 분위기의 형성이 자연산화막을 성장시키는 결과를 초래하게 되므로 이러한 자연산화막 형성은 공정에 대단히 심각한 악영향을 주는 원인이 된다.However, in the Mattson RTP facility, the formation of oxygen (O 2 ) atmosphere due to the inflow of air results in the growth of the natural oxide layer in the rapid thermal nitridation (RTN) process for Ti / TiN annealing. It causes a very serious adverse effect.
때문에 외부 공기의 유입을 최소화하기 위하여 로의 웨이퍼가 로딩/언로딩하는 통로의 입구를 축소하기도 하였으나 완벽한 차단이 불가능하고, 외기의 유입에 따라 공정 수행을 위한 온도에 도달하기 까지의 퍼지 타임이 지나치게 길어지면서 공정 시간을 지연시키는 문제가 있다.Therefore, in order to minimize the inflow of outside air, the inlet of the wafer loading / unloading passage is reduced, but it is impossible to block completely, and the purge time until reaching the temperature for performing the process is too long due to the inflow of outside air. There is a problem of delaying the process time.
따라서 본 발명은 상술한 종래 기술의 문제점들을 해결하기 위하여 발명된 것으로서, 본 발명은 웨이퍼를 로딩/언로딩하면서 통과하게 되는 통로의 입구가 개방되는 상태에서는 퍼지 가스가 수직으로 분사되면서 로내로의 외부 공기 유입이 방지되도록 하여 공정 조건을 형성하는데 소요되는 시간이 대폭 단축될 수 있도록 하는데 주된 목적이 있다.Therefore, the present invention is invented to solve the above-described problems of the prior art, the present invention is the outside of the inside of the furnace while the purge gas is injected vertically in the state in which the inlet of the passage that passes while loading / unloading the wafer is opened. The main purpose is to prevent the inflow of air so that the time required to form the process conditions can be significantly shortened.
또한 본 발명은 웨이퍼에의 자연 산화막 생성을 최소화함으로써 제품의 품질이 향상되도록 하는데 다른 목적이 있다.It is another object of the present invention to improve the quality of the product by minimizing the production of natural oxide film on the wafer.
도 1은 종래의 매엽식 확산공정 수행을 위한 반도체 제조 장치를 도시한 사시도,1 is a perspective view showing a semiconductor manufacturing apparatus for performing a conventional sheet-fed diffusion process,
도 2는 본 발명의 반도체 제조 장치를 도시한 분리 사시도,2 is an exploded perspective view showing a semiconductor manufacturing apparatus of the present invention;
도 3은 본 발명의 요부 확대 단면도.Figure 3 is an enlarged cross-sectional view of the main part of the present invention.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
10 : 후레임 20 : 튜브10: frame 20: tube
30 : 컴플레션 플레이트 40 : 웨이퍼 트레이30: complexion plate 40: wafer tray
50 : 커버 플레이트 60 : 퍼지 가스 분사 부재50: cover plate 60: purge gas injection member
61 : 노즐61: nozzle
이와 같은 목적을 달성하기 위하여 본 발명은 일정한 온도와 압력의 공정 분위기를 형성한 튜브의 내부로 일측으로부터 불순물 가스를 주입하여 웨이퍼에 필요로 하는 막질을 형성하면서 어닐을 수행하는 반도체 제조 장치에 있어서, 상기 튜브 내의 웨이퍼 트레이로 웨이퍼를 로딩/언로딩하는 선단부측의 컴프레션 플레이트의 상부면으로 퍼지 가스 분사 부재가 구비되도록 하고, 상기 퍼지 가스 분사 부재는 복수의 노즐이 하향 구비되면서 상기 컴프레션 플레이트에 수평 관통되게 형성한 통로에 연통되도록 하여 도어에 의해 통로가 개방되면 상기 노즐로부터 퍼지 가스가 분사되면서 외기의 유입이 차단되도록 하는 것이다.In order to achieve the above object, the present invention provides a semiconductor manufacturing apparatus for performing annealing while injecting impurity gas from one side into a tube in which a process atmosphere at a constant temperature and pressure is formed to form a film required for a wafer. The purge gas jetting member is provided to the upper surface of the compression plate on the tip side for loading / unloading the wafer into the wafer tray in the tube, and the purge gas jetting member penetrates the compression plate horizontally while the plurality of nozzles are provided downward. When the passage is opened by the door, the purge gas is injected from the nozzle to block the inflow of outside air.
이하 본 발명의 바람직한 실시예를 첨부된 도면에 의하여 더욱 상세히 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
본 발명은 매엽식 즉 낱장의 웨이퍼를 로딩하여 보다 신속하게 확산 공정을 수행할 수 있도록 하는 반도체 제조 장치로서, 본 발명은 도 2에서와 같이 크게 후레임(10)과 튜브(20)와 컴프레션 플레이트(30)와 웨이퍼 트레이(40) 및 커버 플레이트(50)로서 이루어지는 구성인 바 이상의 구성은 종전과 대동소이하다.The present invention is a semiconductor manufacturing apparatus that can perform a diffusion process more quickly by loading a single wafer, that is, a sheet of wafer, the present invention is large frame 10, tube 20 and compression plate (as shown in FIG. 30) and the above structure which are the structure which consists of the wafer tray 40 and the cover plate 50 are the same as before.
후레임(10)에는 양측면의 상단면과 하단면으로 램프 거치대(11)가 구비되면서 이 램프 거치대(11)에는 복수의 할로겐 램프(12)가 구비된다. 후레임(10)은 수직방향으로 관통되면서 이 수직의 방향으로는 냉각 가스가 유동한다.The frame 10 is provided with lamp holders 11 at the upper and lower surfaces of both sides, and the lamp holder 11 is provided with a plurality of halogen lamps 12. The frame 10 penetrates in the vertical direction while the cooling gas flows in the vertical direction.
튜브(20)는 실질적으로 확산 공정을 수행하게 되는 챔버로서, 후레임(10)에 슬라이딩 이송되어 견고하게 장착되는 구성이며, 일단면으로는 불순물 가스가 주입되고, 그와 대응되는 타단면은 개방되도록 한 형상이다.The tube 20 is a chamber that substantially performs a diffusion process, and is configured to be slidably transported to the frame 10 so as to be firmly mounted. An impurity gas is injected into one end thereof, and the other end corresponding thereto is opened. It is a shape.
컴프레션 플레이트(30)는 후레임(10)의 선단부에 체결 고정되면서 튜브(20)가 후레임(10)으로부터 이탈되지 않도록 지지하는 구성이다. 컴플레션 플레이트(30)에는 튜브(20)의 개방된 일단면보다는 작은 사이즈로서 수평 관통되는 홀(31)을 형성한다.The compression plate 30 is configured to support the tube 20 not to be separated from the frame 10 while being fastened and fixed to the front end of the frame 10. The complex plate 30 is formed with a horizontally penetrating hole 31 having a smaller size than the open end surface of the tube 20.
웨이퍼 트레이(40)는 튜브(20)의 내부에 삽입되어 웨이퍼가 안치되도록 하여 실제적으로 확산 공정을 수행하게 되는 부위이다.The wafer tray 40 is a portion that is inserted into the tube 20 to allow the wafer to be placed so as to actually perform the diffusion process.
커버 플레이트(50)는 박판으로 이루어지면서 튜브(20)에 결합되는 웨이퍼 트레이(40)의 선단부에 수직방향으로 억지끼움에 의해서 고정되는 구성으로, 커버 플레이트(50)에는 로봇에 의해 웨이퍼를 로딩/언로딩시킬 수 있도록 하는 최소한의 크기로 통로(51)가 형성되도록 하고 있다.The cover plate 50 is made of a thin plate and is fixed to the front end portion of the wafer tray 40 coupled to the tube 20 by the interference fit in the vertical direction. The cover plate 50 is loaded / loaded by the robot by the robot. The passage 51 is formed to a minimum size to allow the unloading.
한편 상기한 구성에서 개방된 커버 플레이트(50)의 통로(51)는 별도로 실린더 구동에 의해서 작동하는 도어(미도시)에 의하여 개폐된다.Meanwhile, the passage 51 of the cover plate 50 opened in the above configuration is opened and closed by a door (not shown) that is operated by a cylinder drive separately.
상기한 구성에서 본 발명은 도 3에서와 같이 컴프레션 플레이트(30)의 상단면으로 퍼지 가스 분사 부재(60)를 구비하고, 이들 퍼지 가스 분사 부재(60)에는 복수의 노즐(61)이 컴프레션 플레이트(30)에서 수평 관통되게 형성한 홀(31)을 따라 이 홀(31)에 연통되게 구비되며, 퍼지 가스 분사 부재(60)의 노즐(61)로부터 분사되는 가스에 의해서 홀(31)을 통한 외기의 유입이 차단되게 하는데 특징이 있다.In the above configuration, the present invention includes a purge gas injection member 60 as an upper surface of the compression plate 30 as shown in FIG. 3, and a plurality of nozzles 61 are provided on the purge gas injection member 60. It is provided in communication with the hole 31 along the hole 31 formed to horizontally penetrate through the 30, and through the hole 31 by the gas injected from the nozzle 61 of the purge gas injection member 60 It is characterized by blocking the inflow of outside air.
퍼지 가스 분사 부재(60)는 웨이퍼를 튜브(20)로 로딩/언로딩하기 위하여 도어의 개방작용에 의해 튜브(20)가 외부와 개방되는 시점에서부터 다시 폐쇄될 때까지 작동하면서 퍼지 가스를 분사하게 된다.The purge gas injection member 60 operates to inject the purge gas while operating from the time when the tube 20 is opened from the outside and closed again by the opening action of the door to load / unload the wafer into the tube 20. do.
퍼지 가스로는 통상 설비의 퍼지에 가장 많이 사용하는 질소 가스를 사용하는 것이 가장 바람직하다.As the purge gas, it is usually most preferable to use nitrogen gas which is most often used for purging equipment.
상기한 구성에 따른 본 발명의 작용에 대해서 보다 상세하게 살펴보면 다음과 같다.Looking at the operation of the present invention according to the above configuration in more detail as follows.
본 발명은 반도체를 제조하는 공정 중에 웨이퍼에 필요로 하는 막질을 형성하기 위해 수행하는 공정으로, 특히 도핑 소스로서 불순물 가스를 사용하는 공정이며, 웨이퍼를 한 매씩 튜브(20)의 내부로 로딩시켜 공정을 수행하는 매엽식 설비이다.The present invention is a process performed to form the film quality required for the wafer during the semiconductor manufacturing process, in particular a process using an impurity gas as a doping source, by loading the wafer into the tube 20 one by one It is a refurbished facility to carry out.
공정 수행을 위하여 우선 웨이퍼를 이송 로봇에 의해 튜브(20)측으로 이송하고, 이때 도어의 구동으로 커버 플레이트(50)의 통로(51)가 개방됨과 동시에 컴프레션 플레이트(30)의 상단부에 구비되는 퍼지 가스 분사 부재(60)의 복수의 노즐(61)들로부터 퍼지 가스가 하향 분사되면서 에어 커튼을 형성되게 하여 튜브(20)의 내부로 웨이퍼가 유도될 때 외기 유입이 최대한 억제되도록 한다.In order to perform the process, the wafer is first transferred to the tube 20 by a transfer robot. At this time, the passage 51 of the cover plate 50 is opened by the driving of the door and the purge gas provided at the upper end of the compression plate 30. As the purge gas is injected downward from the plurality of nozzles 61 of the injection member 60, an air curtain is formed so that the inflow of outside air is suppressed as much as the wafer is guided into the tube 20.
즉 통로(51)가 개방되기 시작하면서 바로 퍼지 가스 분사 부재(60)로부터는 퍼지 가스가 분사되면서 통로(51)의 안쪽에서 컴프레션 플레이트(30)의 홀(31)에 에어 커튼을 형성하여 외기가 튜브(20)의 내부로 유입되지 않도록 하는 것이다.That is, as the passage 51 starts to open, the purge gas is injected from the purge gas injection member 60 and an air curtain is formed in the hole 31 of the compression plate 30 inside the passage 51 so that the outside air It does not flow into the tube 20.
이처럼 외기의 유입을 방지하게 되면 튜브(20) 내부에서의 공정 분위기 형성즉 공정 수행을 위한 고온의 상태로 전환이 대단히 신속하게 이루어질 수가 있다. 따라서 공정을 진행하는 시간이 단축되면서 그만큼 웨이퍼의 생산성을 향상시킬 수가 있다.As such, when the inflow of external air is prevented, the process atmosphere may be formed in the tube 20, that is, the transition to a high temperature state for performing the process may be performed very quickly. Therefore, while the time to process is shortened, the productivity of the wafer can be improved accordingly.
특히 튜브(20)의 내부가 산소 분위기로 되는 것이 방지되게 함으로써 자연 산화막 형성에 따른 공정 불량이 제거됨과 동시에 제품의 품질을 더욱 향상시킬 수가 있게 된다.In particular, by preventing the inside of the tube 20 from becoming an oxygen atmosphere, process defects due to the formation of a natural oxide film can be eliminated and the quality of the product can be further improved.
한편 상기한 설명에서 많은 사항이 구체적으로 기재되어 있으나, 그들은 발명의 범위를 한정하는 것이라기보다는 바람직한 실시예의 예시로서 해석되어야 한다.On the other hand, while many matters have been described in detail in the above description, they should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention.
따라서 본 발명의 범위는 설명된 실시예에 의하여 정하여 질 것이 아니고 특허 청구범위에 기재된 기술적 사상에 의해 정하여져야 한다.Therefore, the scope of the present invention should not be defined by the described embodiments, but should be determined by the technical spirit described in the claims.
상술한 바와 같이 본 발명에 의하면 컴프레션 플레이트(30)의 상부 구성을 간단히 개선하여 수평으로 관통한 홀(31)에 연통되게 퍼지 가스 분사 부재(60)가 구비되게 함으로써 웨이퍼의 로딩/언로딩을 위한 도어의 개방 작동시 튜브(20) 내부로의 외기 특히 산소 유입이 억제되도록 하여 산화막 생성이 방지되게 하는 동시에 공정 수행에 필요한 분위기 형성 시간을 단축할 수 있게 함으로써 웨이퍼 생산성과 제품 품질이 향상되도록 하는 효과를 제공한다.As described above, according to the present invention, the upper configuration of the compression plate 30 is simply improved to provide the purge gas ejection member 60 in communication with the horizontally penetrating hole 31 so as to load / unload the wafer. The effect of improving the wafer productivity and product quality by preventing the formation of oxide film by preventing the inflow of outside air, especially oxygen into the tube 20, during the opening operation of the door, and at the same time reducing the atmosphere formation time required for performing the process. To provide.
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