KR20040012234A - Semiconductor high temperature processing equipment and process method - Google Patents
Semiconductor high temperature processing equipment and process method Download PDFInfo
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- KR20040012234A KR20040012234A KR1020020045681A KR20020045681A KR20040012234A KR 20040012234 A KR20040012234 A KR 20040012234A KR 1020020045681 A KR1020020045681 A KR 1020020045681A KR 20020045681 A KR20020045681 A KR 20020045681A KR 20040012234 A KR20040012234 A KR 20040012234A
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Abstract
Description
본 발명은 반도체 고온 공정 설비 및 방법에 관한 것으로, 특히 공정 진행시 급속한 가열에 의한 온도 편차를 감소시키기 위하여 예열 장치(Pre-heating System)를 구비한 반도체 고온 공정 설비 및 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor high temperature process equipment and methods, and more particularly to semiconductor high temperature process equipment and methods having a pre-heating system in order to reduce temperature variations due to rapid heating during process progress.
일반적으로, 반도체 소자를 형성하기 위하여 반도체 기판 상에 특정 막질 - 예를 들면 산화막 또는 금속막 -을 형성 또는 증착한 후에, 포토(Photo) 공정을 통하여 반도체 기판인 웨이퍼(Wafer) 상에 전기적 패턴(Pattern)을 매핑(Mapping)한 후 식각 공정을 통하여 상기 패턴을 형상화하는 공정을 여러 차례 반복한다. 상기 반복되는 공정은 전처리 공정(Fabrication Process)이라 통칭하며 이에 따라 반도체 웨이퍼 상에 소정의 반도체 소자가 형성된다.In general, after forming or depositing a specific film quality (eg, an oxide film or a metal film) on a semiconductor substrate to form a semiconductor device, an electrical pattern (a wafer), which is a semiconductor substrate, is formed through a photo process. After mapping the pattern, the process of shaping the pattern through an etching process is repeated several times. The repeated process is commonly referred to as a fabrication process, and a predetermined semiconductor device is formed on the semiconductor wafer.
상기 산화막 또는 금속막을 증착 및 아닐링(Annealing)하는 300℃ 이상의 고온 공정에는 도 1에 보여지는 바와 같은 고온 공정 설비가 사용된다.The high temperature process equipment as shown in FIG. 1 is used for the high temperature process of 300 degreeC or more which deposits and anneales the said oxide film or a metal film.
도 1을 참조하면, 종래의 상기 고온 공정 설비는 웨이퍼를 로딩(Loading) 및 언로딩(Unloading)하는 로드락 챔버(Load Lock Chamber, 101,102), 웨이퍼를 정렬하는 얼라이너(Aligner, 110), 상기 웨이퍼에 고온 공정을 진행하는 공정 챔버(140), 공정이 진행된 웨이퍼를 냉각하는 쿨러(Cooler, 120), 및 상기 공정 챔버(140)와 얼라이너(110), 쿨러(120) 사이에 웨이퍼를 이송하는 로봇(Robot, 130)을 구비한다. 이때, 상기 웨이퍼에 대한 공정의 진행 순서는 다음과 같다.Referring to FIG. 1, the conventional high temperature processing apparatus includes a load lock chamber 101 and 102 for loading and unloading a wafer, an aligner 110 for aligning the wafer, The wafer is transferred between the process chamber 140 for performing a high temperature process on the wafer, a cooler 120 for cooling the processed wafer, and the process chamber 140, the aligner 110, and the cooler 120. A robot 130 is provided. At this time, the procedure of the process for the wafer is as follows.
도 2를 참조하면, 먼저 웨이퍼를 포함한 웨이퍼 카세트(Wafer Cassette)가 로드락 챔버(101)에 로딩되고(단계 S1) 한 장의 웨이퍼씩 얼라이너(110)에 이송되어, 상기 얼라이너에서 웨이퍼를 정렬한 후(단계 S2), 상기 로봇(130)이 웨이퍼를 각각의 공정 챔버(140)에 이송한다. 웨이퍼가 상기 공정 챔버에 이송되면, 고온 공정이 진행되고(단계 S3), 상기 고온 공정이 완료된 후 다시 로봇(130)은 웨이퍼를 쿨러(120)에 이송하여 웨이퍼를 냉각한다(단계 S4). 냉각이 완료된 후, 상기 웨이퍼는 로드락 챔버(102)로 이송된다(단계 S5). 전체 웨이퍼에 대한 고온 공정이 완료되면, 로드락 챔버(102)의 웨이퍼 카세트를 꺼낸다.Referring to FIG. 2, a wafer cassette (Wafer Cassette) including a wafer is first loaded into the load lock chamber 101 (step S1), and each wafer is transferred to the aligner 110 one by one to align the wafers in the aligner. After that (step S2), the robot 130 transfers the wafer to each process chamber 140. When the wafer is transferred to the process chamber, a high temperature process is performed (step S3), and after the high temperature process is completed, the robot 130 transfers the wafer to the cooler 120 to cool the wafer (step S4). After the cooling is completed, the wafer is transferred to the load lock chamber 102 (step S5). Upon completion of the high temperature process for the entire wafer, the wafer cassette of the load lock chamber 102 is removed.
상기 각각의 공정 챔버(140)에 로딩되는 웨이퍼는 소정의 고온의 공정을 진행할 때 웨이퍼 내의 모든 반도체 소자들이 균일한 고온으로 진행 될 수 있도록, 상기 웨이퍼를 균일한 고온으로 유지함이 바람직하다.The wafer loaded in each process chamber 140 is preferably maintained at a uniform high temperature so that all semiconductor elements in the wafer can be processed at a uniform high temperature when a predetermined high temperature process is performed.
그러나, 상기 공정 진행전의 웨이퍼는 상온의 상태이므로 상기 고온의 공정에서 균일한 온도로 웨이퍼 전체를 유지하기 어렵다. 특히, 상온에서 급속하게 고온으로 온도를 상승시키는 알티피(RTP, Rapid Thermal Process) 공정인 경우, 상기 웨이퍼 전체에서 균일한 온도를 유지하기가 더욱 어렵다. 이는 상기 고온 공정의 공정 온도와 공정 진행 전의 웨이퍼의 온도의 차가 심할수록 흔히 발생하는 현상이다.However, since the wafer before the process proceeds at room temperature, it is difficult to maintain the entire wafer at a uniform temperature in the high temperature process. In particular, in the case of a rapid thermal process (RTP) process in which the temperature is rapidly increased from room temperature to high temperature, it is more difficult to maintain a uniform temperature throughout the wafer. This is a phenomenon that often occurs as the difference between the process temperature of the high temperature process and the temperature of the wafer before the process proceeds.
만약 웨이퍼 전체에 균일한 고온 처리가 가능한 충분한 공정 시간을 보장하지 못한다면, 전체 웨이퍼가 균일한 고온 처리 공정으로 진행되지 못하여 웨이퍼 내의 반도체 소자들의 소자 특성을 열화시킨다.If a uniform high temperature treatment is not possible to ensure a sufficient process time for the entire wafer, the entire wafer may not proceed to a uniform high temperature treatment process, resulting in deterioration of device characteristics of semiconductor elements in the wafer.
이러한 온도차이를 좀 더 빠르게 보상하기 위하여, 상기 공정 챔버의 공정 압력을 저압(Low Pressure)으로 진행하기도 한다. 그러나, 상기 저압 공정에서도상기 웨이퍼의 균일한 고온 공정 진행을 위하여, 충분한 공정 시간을 유지하는 일이 빈번하고 따라서, 전체 공정 시간이 증가한다.In order to more quickly compensate for such a temperature difference, the process pressure of the process chamber may be advanced to low pressure. However, even in the low pressure process, sufficient process time is frequently maintained for uniform high temperature process of the wafer, and thus, the overall process time increases.
더불어, 상기 웨이퍼 내의 반도체 소자의 특성상, 공정 시간을 충분히 부여하지 못하는 경우도 대부분이다. 따라서, 제한된 공정 시간에 전체 웨이퍼가 균일한 공정 온도로 진행됨이 바람직하다.In addition, in many cases, due to the characteristics of the semiconductor device in the wafer, a sufficient processing time is not provided. Therefore, it is desirable that the entire wafer proceeds to a uniform process temperature in a limited process time.
상기한 바와 같이, 본 발명은, 특히 상기 알티피 공정의 경우, 제한된 공정 시간에도 웨이퍼 전체에 균일한 공정 온도로 진행될 수 있도록 공정 챔버에 로딩되기 전의 웨이퍼와 상기 공정 조건 온도와의 온도차를 줄이는 장치 및 방법을 제공한다.As described above, the present invention is an apparatus for reducing the temperature difference between the wafer and the process condition temperature before being loaded into the process chamber so that the process can be carried out at a uniform process temperature throughout the wafer even in a limited process time, especially in the Altipi process. And methods.
따라서, 본 발명은 제한된 공정 시간에도 웨이퍼 전체에 균일한 공정 온도로 진행될 수 있도록 공정 챔버에 로딩되기 전의 웨이퍼와 상기 공정 조건 온도와의 온도차를 줄이는 장치 및 방법을 제공하여 생산성을 향상하고 반도체 소자의 특성을 향상한다.Accordingly, the present invention provides an apparatus and method for reducing the temperature difference between the wafer before being loaded into the process chamber and the process condition temperature so as to proceed at a uniform process temperature over the entire wafer even in a limited process time, thereby improving productivity and improving the productivity of semiconductor devices. Improve properties.
도 1은 종래의 반도체 고온 공정 설비의 평면도이다.1 is a plan view of a conventional semiconductor high temperature processing equipment.
도 2는 종래의 반도체 고온 공정 설비에서의 웨이퍼 진행 순서이다.2 is a flow chart of a wafer in a conventional semiconductor high temperature processing facility.
도 3은 본 발명의 일 실시예에 의한 반도체 고온 공정 설비의 평면도이다.3 is a plan view of a semiconductor high temperature processing apparatus according to an embodiment of the present invention.
도 4는 도 3의 A 부분의 확대 단면도이다.4 is an enlarged cross-sectional view of a portion A of FIG. 3.
도 5는 본 발명의 일 실시예에 의한 반도체 고온 공정 설비에서의 웨이퍼 진행 순서이다.5 is a flowchart illustrating a wafer processing process in a semiconductor high temperature processing apparatus according to an exemplary embodiment of the present invention.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
101, 102 로드락(Load lock) 챔버(Chamber)101, 102 Load lock chamber
110 웨이퍼 얼라이너(Wafer Aligner)120 웨이퍼 쿨러(Wafer Cooler)110 Wafer Aligner 120 Wafer Cooler
130 로봇(Robot)140 공정 챔버130 Robot 140 Process Chamber
150 웨이퍼 예열 장치(Wafer Pre-heating System)150 Wafer Pre-heating System
상기 목적을 달성하기 위하여 웨이퍼(Wafer)를 로딩(Loading) 및 언로딩(Unloading)하는 로드락 챔버(Load Lock Chamber); 웨이퍼를 정렬하는 얼라이너(Aligner); 상기 웨이퍼에 고온 공정을 진행하는 적어도 한 개 이상의 공정 챔버; 상기 고온 공정이 진행된 웨이퍼를 냉각하는 쿨러(Cooler); 상기 공정 챔버와 상기 얼라이너, 상기 쿨러 사이에 웨이퍼를 이송하는 로봇(Robot); 및 상기 각각의 공정 챔버의 전단에 위치하여 상기 고온 공정을 진행하기 전에 상기 웨이퍼를 예열하는 예열 시스템(Pre-heating System)을 구비한 반도체 고온 공정 설비를 제공한다.A load lock chamber for loading and unloading a wafer to achieve the above object; An aligner to align the wafer; At least one process chamber undergoing a high temperature process on the wafer; A cooler for cooling the wafer at which the high temperature process is performed; A robot transferring a wafer between the process chamber, the aligner and the cooler; And a pre-heating system positioned at the front end of each process chamber to preheat the wafer before proceeding with the high temperature process.
또한, 상기 예열 시스템은 열을 방출하는 할로겐 램프; 및 상기 방출되는 열을 상기 웨이퍼 상에 집진하는 집진 반사판을 구비한다.The preheating system also includes a halogen lamp for dissipating heat; And a dust collecting reflector for collecting the discharged heat on the wafer.
또한, 상기 로봇은 웨이퍼를 운반하는 이송 암(Transfer Arm)에 운반 중인 웨이퍼의 온도를 감지하는 온도 센서(Sensor)를 포함한다.In addition, the robot includes a temperature sensor for sensing the temperature of the wafer being transported to a transfer arm for transporting the wafer.
또한, 상기 예열 시스템은 상기 온도 센서에 의하여 감지된 온도에 의하여 상기 할로겐 램프의 언/오프(On/Off)를 제어하는 제어 장치를 더욱 구비한다.In addition, the preheating system further includes a control device for controlling the on / off of the halogen lamp by the temperature sensed by the temperature sensor.
본 발명의 다른 목적으로, 웨이퍼를 포함한 웨이퍼 카세트(Wafer Cassette)를 로드락 챔버에 로딩하는 단계; 한 장의 웨이퍼씩 얼라이너에 이송되어, 상기 얼라이너에서 웨이퍼를 정렬하는 단계; 각각의 공정 챔버에 해당하는 예열 시스템의 할로겐 램프가 언(On)되어 웨이퍼를 예열하는 단계; 상기 웨이퍼를 상기 공정 챔버에 이송하여, 고온 공정을 진행하는 단계; 상기 웨이퍼를 쿨러로 이송하여 냉각하는 단계; 및 상기 웨이퍼를 로드락 챔버로 이송하는 단계를 구비한 반도체 고온 공정 설비의 고온 공정 진행 방법을 제공한다.Another object of the present invention is to load a wafer cassette (Wafer Cassette) including a wafer in the load lock chamber; Transferring the wafers one by one to the aligner to align the wafers in the aligner; A halogen lamp of a preheating system corresponding to each process chamber is turned on to preheat the wafer; Transferring the wafer to the process chamber to perform a high temperature process; Transferring the wafer to a cooler to cool the wafer; And transferring the wafer to the load lock chamber.
이하 본 발명에 따른 바람직한 실시 예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 3을 참조하면, 본 발명의 일 실시예에 의한 반도체 고온 공정 설비는 웨이퍼를 로딩(Loading) 및 언로딩(Unloading)하는 로드락 챔버(Load Lock Chamber, 101,102), 웨이퍼를 정렬하는 얼라이너(Aligner, 110), 상기 웨이퍼에 고온 공정을 진행하는 공정 챔버(140), 공정이 진행된 웨이퍼를 냉각하는 쿨러(Cooler, 120), 상기 공정 챔버(140)와 얼라이너(110), 쿨러(120) 사이에 웨이퍼를 이송하는 로봇(Robot, 130), 및 웨이퍼를 상기 각각의 공정 챔버에 로딩하기 전에 소정의 온도로 예열하는 예열 시스템(Pre-heating System, 150)을 구비한다.Referring to FIG. 3, a semiconductor high temperature processing apparatus according to an embodiment of the present invention includes a load lock chamber 101 and 102 for loading and unloading a wafer, and an aligner for aligning the wafer. Aligner 110, a process chamber 140 for performing a high temperature process on the wafer, a cooler (120) for cooling the processed wafer, the process chamber 140 and the aligner 110, cooler 120 A robot 130 for transferring wafers therebetween, and a pre-heating system 150 for preheating the wafer to a predetermined temperature before loading the wafer into the respective process chambers.
도 4는 도 3의 A 부분의 확대 단면도로서, 상기 예열 시스템(150) 및 공정 챔버(140), 로봇(130) 부의 단면도이다. 도 4를 참조하면, 상기 예열 시스템(150)은 웨이퍼를 예열하는 할로겐 램프(151), 상기 할로겐 램프에서 방열되는 열을 웨이퍼에 집진하는 집진용 반사판(152)을 구비한다. 또한, 상기 로봇(130)에 연결되어 직접 웨이퍼를 로딩 및 언로딩하는 이송 암(Transfer Arm, 131)에는 상기 예열 시스템에서 방출한 열에 의하여 상승된 웨이퍼(100)의 온도가 어느 정도인지를 감지하는 온도 센서(132)가 장착되어 있다. 상기 온도 센서(132)는 상기 이송 암(131)의 어느 부분에 위치하여도 무방하나, 중앙 부분이 적절하다.4 is an enlarged cross-sectional view of the portion A of FIG. 3, and is a cross-sectional view of the preheating system 150, the process chamber 140, and the robot 130. Referring to FIG. 4, the preheating system 150 includes a halogen lamp 151 for preheating the wafer and a dust collecting reflector 152 for collecting heat radiated from the halogen lamp onto the wafer. In addition, the transfer arm 131 connected to the robot 130 to directly load and unload the wafer detects the temperature of the wafer 100 raised by the heat emitted from the preheating system. The temperature sensor 132 is mounted. The temperature sensor 132 may be located at any portion of the transfer arm 131, but a central portion is appropriate.
상기 온도 센서(132)에 의하여 감지된 온도에 의하여 상기 할로겐 램프(151)의 언/오프(On/off) 동작을 제어한다. 상기와 같은 고온 공정 설비에서의 고온 공정은 다음과 같이 진행된다.The on / off operation of the halogen lamp 151 is controlled by the temperature sensed by the temperature sensor 132. The high temperature process in the high temperature process equipment as described above proceeds as follows.
도 5를 참조하면, 먼저 웨이퍼를 포함한 웨이퍼 카세트(Wafer Cassette)가 로드락 챔버(101)에 로딩되고(단계 S1) 한 장의 웨이퍼씩 얼라이너(110)에 이송되어, 상기 얼라이너에서 웨이퍼를 정렬한 후(단계 S2), 상기 로봇(130)이 웨이퍼를 각각의 공정 챔버(140)에 이송한다. 이때, 상기 각각의 공정 챔버에 해당하는 각각의 예열 시스템(150)의 할로겐 램프(151)가 언(On)되어 상기 이송되는 웨이퍼를 예열한다(단계 S3). 예열 온도는 상기 공정 온도보다 낮은 온도가 바람직하다.Referring to FIG. 5, a wafer cassette including a wafer is first loaded into the load lock chamber 101 (step S1), and each wafer is transferred to the aligner 110 one by one to align the wafers in the aligner. After that (step S2), the robot 130 transfers the wafer to each process chamber 140. At this time, the halogen lamp 151 of each preheating system 150 corresponding to each process chamber is turned on to preheat the transferred wafer (step S3). The preheating temperature is preferably lower than the process temperature.
상기 온도 센서(132)는 이때 웨이퍼의 온도를 감지하여 상기 감지된 온도가 소정의 예열 설정 온도보다 높으면, 상기 할로겐 램프(151)를 오프(Off)하는 명령이 상기 고온 공정 설비의 제어 장치(미도시)에서 할로겐 램프로 전달된다.At this time, the temperature sensor 132 senses the temperature of the wafer and if the detected temperature is higher than a predetermined preheating set temperature, a command to turn off the halogen lamp 151 is controlled by the control device of the high temperature process equipment (not shown). Is delivered to the halogen lamp.
웨이퍼가 상기 공정 챔버에 이송되면, 고온 공정이 진행되고(단계 S4), 상기 고온 공정이 완료된 후 다시 로봇(130)은 웨이퍼를 쿨러(120)에 이송하여 웨이퍼를 냉각한다(단계 S5). 냉각이 완료된 후, 상기 웨이퍼는 로드락 챔버(102)로 이송된다(단계 S6). 전체 웨이퍼에 대한 고온 공정이 완료되면, 로드락 챔버(102)의 웨이퍼 카세트를 꺼낸다.When the wafer is transferred to the process chamber, a high temperature process proceeds (step S4), and after the high temperature process is completed, the robot 130 transfers the wafer to the cooler 120 to cool the wafer (step S5). After the cooling is completed, the wafer is transferred to the load lock chamber 102 (step S6). Upon completion of the high temperature process for the entire wafer, the wafer cassette of the load lock chamber 102 is removed.
상기한 바와 같은 예열 시스템을 구비한 고온 공정 설비는, 각각의 공정 챔버에 웨이퍼가 로딩되어 해당 고온 공정이 진행되기 전에 웨이퍼를 예열하여, 상기 공정 온도와 웨이퍼의 실 온도와의 차이를 감소시킨다. 따라서, 실제 고온 공정을 진행할 경우 제한된 공정 시간 내에 웨이퍼 상에 균일한 공정 온도를 이루어 웨이퍼 내의 반도체 소자의 특성을 유지할 수 있다.The high temperature process equipment having the preheating system as described above preheats the wafer before each of the process chambers is loaded with the corresponding high temperature process, thereby reducing the difference between the process temperature and the actual temperature of the wafer. Therefore, when the actual high temperature process is performed, a uniform process temperature may be maintained on the wafer within a limited process time to maintain characteristics of the semiconductor device in the wafer.
본 발명이 특히 알티피(RTP, Rapid Thermal Process) 장비에 대하여 설명되었으나 반드시 알티피 장비에 한정되는 것은 아니다.Although the present invention has been described in particular with respect to Rapid Thermal Process (RTP) equipment, it is not necessarily limited to Altipee equipment.
이상에서 본 발명은 기재된 구체 예에 대해서만 상세히 설명하였지만 본 발명의 기술 사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and changes are possible within the technical spirit of the present invention, and such modifications and modifications belong to the appended claims.
상기한 바와 같이, 본 발명에 의한 예열 시스템을 구비한 고온 공정 설비 및 방법은 웨이퍼 상에 제한된 공정 시간 내에 균일한 온도 분포를 이루어 공정시간을 단축하고 웨이퍼 내의 반도체 소자의 특성을 유지할 수 있다.As described above, the high temperature processing equipment and method having the preheating system according to the present invention can achieve a uniform temperature distribution within a limited processing time on the wafer, thereby shortening the processing time and maintaining the characteristics of the semiconductor device in the wafer.
Claims (5)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100719519B1 (en) * | 2005-11-24 | 2007-05-17 | 뉴영엠테크 주식회사 | Semiconductor manufacturing apparatus for use of hot process |
| CN113611633A (en) * | 2021-07-21 | 2021-11-05 | 北京北方华创微电子装备有限公司 | Wafer baking chamber and wafer pre-cleaning method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100719519B1 (en) * | 2005-11-24 | 2007-05-17 | 뉴영엠테크 주식회사 | Semiconductor manufacturing apparatus for use of hot process |
| CN113611633A (en) * | 2021-07-21 | 2021-11-05 | 北京北方华创微电子装备有限公司 | Wafer baking chamber and wafer pre-cleaning method thereof |
| CN113611633B (en) * | 2021-07-21 | 2023-01-17 | 北京北方华创微电子装备有限公司 | Wafer baking chamber and wafer pre-cleaning method thereof |
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