KR20040001324A - Position sensitive liquid crystal display device - Google Patents
Position sensitive liquid crystal display device Download PDFInfo
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- KR20040001324A KR20040001324A KR1020020036480A KR20020036480A KR20040001324A KR 20040001324 A KR20040001324 A KR 20040001324A KR 1020020036480 A KR1020020036480 A KR 1020020036480A KR 20020036480 A KR20020036480 A KR 20020036480A KR 20040001324 A KR20040001324 A KR 20040001324A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000010408 film Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims abstract description 4
- 239000011159 matrix material Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 13
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
Description
본 발명은 위치감지 액정표시장치에 관한 것으로, 특히 위치감지전극과 공통전극간에 신호 간섭이 없는 일체형 위치감지 액정표시장치에 관한 것이다.The present invention relates to a position sensing liquid crystal display, and more particularly, to an integrated position sensing liquid crystal display without signal interference between the position sensing electrode and the common electrode.
최근, CRT(Cathode Ray Tube) 이외에 대화면, 고화질의 다양한 디스플레이 소자가 개발되고 있으며, 대표적으로 PDP, LCD, 프로젝션디스플레이 등이 있다. 그 중에서 LCD는 제조 가격이 비교적 낮고, 두께가 얇으며, 발열량이 적기 때문에 LED와 함께 널리 사용되고 있으며 전자 손목 시계를 비롯하여 TV의 화면 표시는 물론, 옥외 전광판(full color display)으로도 널리 이용되고 있다.Recently, various display devices having a large screen and high quality, in addition to the CRT (Cathode Ray Tube), have been developed, and there are PDP, LCD, and projection display. Among them, LCDs are widely used with LEDs because of their relatively low manufacturing cost, thin thickness, and low heat generation, and are widely used as electronic wrist watches, TV screen displays, and outdoor full-color displays. .
일반적으로 액정표시장치는 도 1에 도시한 바와 같이 TFT 어레이(thin film transistor-array) 기판(10)과 C/F(color filter)기판(20)과 그 사이에 형성된 액정층(30)으로 구성되어 있다.In general, a liquid crystal display device is composed of a TFT array (thin film transistor-array) substrate 10, a C / F (color filter) substrate 20, and a liquid crystal layer 30 formed therebetween, as shown in FIG. It is.
TFT 기판(10)에는 각 픽셀마다 설치되어 액정에 신호 전압을 인가하고 차단하는 스위칭(switching) 역할을 담당하는 박막트랜지스터(TFT)와, 박막트랜지스터(TFT)를 통하여 인가된 신호 전압을 액정셀에 가해주는 화소 전극(8)이 형성되어 있으며, C/F 기판(20)에는 픽셀 사이에 형성되는 차광막(22)과, 여러개의 적색(R), 녹색(G), 청색(B)으로 이루어진 칼라필터층(23)과 그 위에 ITO(indium tin oxide)로 이루어진 공통 전극(28)이 형성되어 있다.The TFT substrate 10 has a thin film transistor TFT installed at each pixel and serves as a switching function to apply and block a signal voltage to the liquid crystal, and a signal voltage applied through the thin film transistor TFT to the liquid crystal cell. The pixel electrode 8 to be applied is formed, and the light blocking film 22 formed between the pixels is formed on the C / F substrate 20, and a color including a plurality of red (R), green (G), and blue (B) pixels. The common electrode 28 made of the filter layer 23 and indium tin oxide (ITO) is formed thereon.
그리고, C/F 기판(20)과 TFT 기판(10)의 상부면에는 폴리이미드(polymide)로된 얇은 유기막으로 이루어진 배향막(29,9)이 형성되어 있다.On the upper surfaces of the C / F substrate 20 and the TFT substrate 10, alignment films 29 and 9 made of thin organic films made of polyimide are formed.
또한, 상기 C/F 기판(20)과 TFT 기판(10) 사이에는 액정을 주입시킬 수 있도록 스페이서를(spacer)(32)두어 일정한 높이의 공간이 형성되도록 한다. 패널의 가장자리에 위치한 실런트(sealant)(34)는 액티브 셀(active cell) 영역을 구성하고, C/F 기판(20)과 TFT 기판(10)을 고정시켜주는 접착제의 역할을 한다.In addition, a spacer 32 is disposed between the C / F substrate 20 and the TFT substrate 10 so as to inject a liquid crystal so that a space having a predetermined height is formed. The sealant 34 located at the edge of the panel constitutes an active cell region and serves as an adhesive for fixing the C / F substrate 20 and the TFT substrate 10.
상기 TFT-기판과 C/F 기판의 구조 및 기능에 관하여 좀더 상세히 설명하면 다음과 같다.Hereinafter, the structure and function of the TFT substrate and the C / F substrate will be described in more detail.
먼저, C/F 기판(20)은 투명한 기판(21) 위에 적색(R), 녹색(G), 청색(B)의 세가지 기본색깔의 염료나 혹은 안료를 포함하는 수지막의 칼라 필터(23)와, 상기 칼라 필터(23)의 픽셀 사이에 형성된 광 차단막의 블랙매트릭스(Back Metrix)(22)와, 상기의 칼라 필터(23)의 평탄화를 위하여 또는 ITO와의 접착력을 향상시키기 위한 오버코트막(over coat film)(25)과, 액정셀에 전압을 인가하기 위해 형성된 투명한 전기 전도체인 ITO로 만들어진 공통전극(28)과, 액정 분자들의 배향을 위해 형성된 배향막(29)으로 구성되어 있으며, 상기 블랙매트릭스(black matrix;22)는 TFT 기판에 각각의 화소를 정의하는 게이트 라인과 데이터 라인 및 상기 박막트랜지스터에 대응하여 형성되어 있다.First, the C / F substrate 20 and the color filter 23 of the resin film containing the dye or pigment of the three basic colors of red (R), green (G), blue (B) on the transparent substrate 21 and And an overcoat for planarization of the black matrix 22 of the light blocking layer formed between the pixels of the color filter 23 and the color filter 23 or for improving adhesion to ITO. film 25, a common electrode 28 made of ITO, a transparent electrical conductor formed to apply a voltage to the liquid crystal cell, and an alignment layer 29 formed to align the liquid crystal molecules. A black matrix 22 is formed on the TFT substrate in correspondence with the gate line and data line defining each pixel and the thin film transistor.
또한, TFT 기판(10)은 투명한 기판(1) 위에 형성되어 게이트라인(미도시)으로부터 주사신호가 인가되는 게이트전극(2)과, 주사신호에 대응하여 데이터 신호를 전송하도록 마련된 반도체층(4)과, 반도체층(4)과 게이트 전극(2)을 전기적으로 격리시켜주는 게이트 절연막(3)과, 반도체층(4)의 상부에 형성되어 데이터 라인(미도시)으로부터 데이터 신호를 인가하는 소스전극(6a)과, 데이터 신호를 화소전극(8)에 인가하는 드레인전극(6b)으로 구성된 박막트랜지스터(TFT)가 형성되어 있다. 상기 박막트랜지스터 및 기판 전면에는 박막트랜지스터의 드레인전극(6b)을 노출시키는 콘택홀(11)이 형성된 보호막이 도포되어 있으며, 상기 콘택홀(11)을 통하여 드레인전극(6b)은 화소전극(8)과 전기적으로 연결되어 있다. 화소전극(8)은 광빔이 투과 되도록 ITO로 이루어진 투명전극으로 형성되어 있으며, 박막트랜지스터의 액티브층은 비정질 실리콘(a-Si)을 증착하여 형성된 반도체층(4)과, 반도체층(4)의 양측 상부에 n+도핑된 오믹접촉층(ohmic contact layer)(5)으로 구성된다.In addition, the TFT substrate 10 is formed on the transparent substrate 1 and has a gate electrode 2 to which a scan signal is applied from a gate line (not shown), and a semiconductor layer 4 provided to transmit a data signal in response to the scan signal. ), A gate insulating film 3 that electrically isolates the semiconductor layer 4 and the gate electrode 2, and a source formed on the semiconductor layer 4 to apply a data signal from a data line (not shown). A thin film transistor TFT formed of an electrode 6a and a drain electrode 6b for applying a data signal to the pixel electrode 8 is formed. A passivation layer having a contact hole 11 exposing the drain electrode 6b of the thin film transistor is coated on the entire surface of the thin film transistor and the substrate, and the drain electrode 6b is connected to the pixel electrode 8 through the contact hole 11. Is electrically connected to the The pixel electrode 8 is formed of a transparent electrode made of ITO so that a light beam is transmitted. The active layer of the thin film transistor includes a semiconductor layer 4 formed by depositing amorphous silicon (a-Si) and a semiconductor layer 4. It consists of an n + doped ohmic contact layer 5 on both sides.
박막트랜지스터의 게이트전극(2)에 하이 레벨(high level)을 갖는 주사신호가 인가되면 반도체층(4)에는 전자가 이동할 수 있는 채널(channel)이 형성되어 소스전극(6a)의 데이터 신호가 반도체층(4)을 경유하여 드레인전극(6b)으로 전달된다. 반면에, 게이트전극(2)에 로우 레벨(low level)을 갖는 주사신호가 인가되면 반도체층(4)에 형성된 채널이 차단되어 드레인전극(6b)으로 데이터신호의 전송이 중단된다.When a scan signal having a high level is applied to the gate electrode 2 of the thin film transistor, a channel through which electrons can move is formed in the semiconductor layer 4 so that the data signal of the source electrode 6a is a semiconductor. It is transferred to the drain electrode 6b via the layer 4. On the other hand, when a scan signal having a low level is applied to the gate electrode 2, the channel formed in the semiconductor layer 4 is cut off and the transmission of the data signal to the drain electrode 6b is stopped.
이러한 일반적인 액정표시소자는 외부로부터 인가되는 구동신호에 의해 화상만을 표시하게 되는데, 최근에는 이를 보다 효율적으로 이용하기 위해서 액정표시장치에 위치감지소자를 구성하여 노트처럼 이용할 수 있도록 하는데 많은 연구가 진행되고 있다. 즉, 위치감지소자가 구성된 액정표시장치에 전자펜으로 문자 또는 그림을 그리면 액정화면에 전자펜으로 그린 문자 또는 그림이 그대로 표시되도록 한 것이다.Such a general liquid crystal display device displays only an image by a driving signal applied from the outside. Recently, in order to use it more efficiently, a lot of researches have been conducted to configure a position sensing device in a liquid crystal display device and use it as a note. have. That is, when a character or a picture is drawn by the electronic pen on the liquid crystal display device having the position sensing element, the character or the picture drawn by the electronic pen is displayed on the liquid crystal display as it is.
상기 액정표시장치에 장착되는 위치감지소자(position sensitivity device)는 터치스크린(touch screen) 또는 태블릿(tablet)이라고도 부르며, 사용자가 지시한 위치를 감지하는 방식에 따라 저항막방식, 정전용량방식, 자계방식으로 분류된다.A position sensitivity device mounted on the liquid crystal display is also called a touch screen or tablet, and may be a resistive film type, a capacitive type, or a magnetic field depending on a method for sensing a position indicated by a user. Are classified in a manner.
저항막방식은 직류전압을 인가한 상태에서 압력에 의해 눌려진 위치를 전류량의 변화로써 감지하며, 정전용량방식은 교류전압을 인가한 상태에서 커패시턴스 커플링(capacitance coupling)을 이용하여 감지한다. 또한, 자계방식은 자계를 인가한 상태에서 선택된 위치를 전압의 변화로써 감지한다.The resistive film method detects a position pressed by pressure in a state in which a DC voltage is applied as a change in the amount of current, and the capacitive method senses a capacitance coupling in a state in which an AC voltage is applied. In addition, the magnetic field method detects the selected position as the change of the voltage while the magnetic field is applied.
최근에는 액정표시장치에 위치감지소자 기능을 부여한 일체형 위치감지 액정표장치가 개발되었다.Recently, an integrated position sensing liquid crystal display device having a position sensing element function in a liquid crystal display device has been developed.
일체형 위치감지 액정표시장치는 종래 액정표시장치의 C/F 기판에 형성된 블랙매트릭스를 위치감지전극으로 사용함으로써 가능해진다.An integrated position sensing liquid crystal display device is made possible by using a black matrix formed on a C / F substrate of a conventional liquid crystal display device as a position sensing electrode.
즉, 도 1에 도시된 액정표시장치의 C/F 기판(20)에 형성된 블랙매트릭스(22)을 위치감지전극으로 사용함으로써 액정표시장치에 위치감지기능을 첨가한 것으로, 블랙매트릭스(22)에 위치감지용 신호를 인가하기 위해서 신호 인가부가 별도가 구성되어야 한다.That is, by using the black matrix 22 formed on the C / F substrate 20 of the liquid crystal display device shown in FIG. 1 as the position sensing electrode, the position sensing function is added to the liquid crystal display device. In order to apply the position sensing signal, a signal applying unit must be separately configured.
도 2는 블랙매트릭스(22)을 위치감지전극으로 사용하고 있는 위치감지 액정표시소자의 C/F 기판을 도시한 평면도이다.FIG. 2 is a plan view showing the C / F substrate of the position sensing liquid crystal display device using the black matrix 22 as the position sensing electrode.
도면에 도시한 바와 같이, 도 1에 도시된 TFT 어레이 기판의 게이트 라인과 데이터 라인에 대응하여 블랙매트릭스(22)가 메쉬(mesh) 형태로 형성되어 있으며,블랙매트릭스(22) 사이에는 적색(R), 녹색(G), 청색(B)의 칼라필터층(21)이 형성되어 있다.As shown in FIG. 1, a black matrix 22 is formed in a mesh shape corresponding to the gate line and the data line of the TFT array substrate illustrated in FIG. 1, and a red (R) is formed between the black matrix 22. ), Green (G) and blue (B) color filter layers 21 are formed.
또한, 상기 블랙매트릭스(22)는 게이트라인과 데이터라인 및 박막트랜터로부터 새어나가는 빛을 차단해주는 역할과 함께 위치감지전극으로써 사용되며, 위치감지전극으로 사용되기 위하여 위치감지용 신호를 인가하는 신호인가부가 별도로 구성된다.In addition, the black matrix 22 is used as a position sensing electrode with a role of blocking light leaking from the gate line, the data line and the thin film transformer, and a signal for applying a position sensing signal to be used as the position sensing electrode. The applicator is configured separately.
이하, 위치감지 액정표시소자의 개략도를 통하여 종래 위치감지 액정표시소자의 문제점을 설명한다.Hereinafter, the problem of the conventional position sensing liquid crystal display device will be described through a schematic view of the position sensing liquid crystal display device.
도 3에 도시한 것은 설명의 편의를 위해 일반적인 TN모드에서 사용되는 종래 일체형 위치감지 액정표시장치의 개략도로써, 도면에 도시한 바와 같이, C/F 기판(20)과 TFT 기판(10), 그리고 상기 C/F 기판(20)과 TFT 기판(10) 사이에 형성된 액정층(30)으로 구성된다.3 is a schematic diagram of a conventional integrated position sensing liquid crystal display device used in a general TN mode for convenience of description. As shown in the drawing, the C / F substrate 20 and the TFT substrate 10, and The liquid crystal layer 30 is formed between the C / F substrate 20 and the TFT substrate 10.
C/F 기판(20)은 투명한 기판(21) 위에 위치감지전극 및 광차단막으로써의 블랙매트릭스(22)와 그 사이에 형성된 칼라필터(23)와 상기 칼라필터(23)의 평탄화를 위해 형성된 오버코트막(25), 그리고 그 위에 형성된 공통전극(28)으로 구성된다.The C / F substrate 20 has a black matrix 22 as a position sensing electrode and a light blocking film on the transparent substrate 21, a color filter 23 formed therebetween, and an overcoat formed to planarize the color filter 23. A film 25 and a common electrode 28 formed thereon.
TFT 기판(10)은 도면에 도시하진 않았지만 전술한 바와 같이 게이트 전극(2)과 소스전극(6a) 및 드레인전극(6b)을 구비한 박막트랜지스터가 일정한 간격으로 배치되어 있으며, 상기 드레인전극(6b)에 연결되는 투명한 ITO 물질로 이루어진 화소전극(8)이 화소영역의 전면에 형성되어 있다.Although not shown in the drawing, the TFT substrate 10 includes thin film transistors including the gate electrode 2, the source electrode 6a, and the drain electrode 6b at regular intervals, and the drain electrode 6b. A pixel electrode 8 made of a transparent ITO material connected to is formed on the entire surface of the pixel region.
또한, 상기 C/F 기판(20)과 TFT 기판(10)의 대향면에는 액정을 배향하기 위한 배향막(29,9)이 형성되어 있다.In addition, alignment films 29 and 9 for aligning liquid crystals are formed on opposite surfaces of the C / F substrate 20 and the TFT substrate 10.
상기와 같이 구성된 일체형 위치감지 액정표시장치는 외부의 구동회로들로부터 구동신호가 인가되면 상기 공통전극(28)과 화소전극(8) 간의 전압에 의해서 화상을 표시하게 된다.The integrated position sensing liquid crystal display device configured as described above displays an image by a voltage between the common electrode 28 and the pixel electrode 8 when a driving signal is applied from external driving circuits.
그러나, 위치감지를 위해 블랙매트릭스로 인가되는 위치감지신호와 공통전극에 인가되는 신호간의 간섭에 의한 노이즈로 인하여 위치를 정확하게 감지할 수 없는 문제점이 있었다.However, there is a problem in that the position cannot be accurately detected due to noise caused by interference between the position sensing signal applied to the black matrix and the signal applied to the common electrode for position sensing.
또한, 블랙매트릭스(22)와 공통 전극(28) 사이에 형성된 오버코트막(25)은 공정상의 불량으로 인하여 막상에 홀(hole)이 자주 발생하게 되는데, 이때 발생된 홀에 의해서 블랙매트릭스(22)와 공통전극(28) 간에 단락(short) 현상이 발생하게 된다. 이는 액정사이에 인가되는 전압을 왜곡시켜 화질을 저하시킬 뿐 아니라 정확한 위치인식을 어렵게 하는 요인이 된다.In addition, in the overcoat layer 25 formed between the black matrix 22 and the common electrode 28, holes are frequently generated on the film due to process defects, and the black matrix 22 is formed by the generated holes. And a short phenomenon occur between the common electrode 28 and the common electrode 28. This not only deteriorates the image quality by distorting the voltage applied between the liquid crystals, but also makes it difficult to accurately recognize the position.
또한, 상기 오버코트막(25)을 사이에 두고 형성된 블랙매트릭스(22)와 공통전극(28) 간에 커패시터 커플링(capacitor coupling) 현상이 발생되어 상기 블랙매트릭스(22)에 인가되는 위치감지용 신호와 공통전극(28)에 인가되는 신호간에 신호간섭으로 인해 Vcom 신호를 왜곡이 발생하여 화면상에 크로스토크(cross talk)를 유발하고 블랙 레벨에서 완전한 블랙의 구현이 어려워 콘스라스트(contrast ratio)를 감소시키는 문제점이 있었다.In addition, a capacitor coupling phenomenon occurs between the black matrix 22 and the common electrode 28 having the overcoat layer 25 interposed therebetween, and a position sensing signal applied to the black matrix 22. Distortion of the Vcom signal due to signal interference between the signals applied to the common electrode 28 causes cross talk on the screen, and it is difficult to realize perfect black at the black level, thereby reducing the contrast ratio. There was a problem letting.
따라서, 본 발명은 상기와 같은 문제점을 해결하기 위해서 이루어진 것으로,본 발명의 목적은 공통전극 및 화소전극이 동일기판 상에 형성된 횡전계방식(In Plane Switching; IPS) 모드에 종래 일체형 위치인식 액정표시장치를 적용함으로써, C/F 기판에 형성된 블랙매트릭스와 공통전극간의 단락불량 및 신호 간섭을 막아 위치감지능력이 향상되고 화면의 질이 향상된 위치감지 액정표시소자를 제공하는데 있다.Accordingly, the present invention has been made to solve the above problems, and an object of the present invention is a conventional integrated position-aware liquid crystal display in an in-plane switching (IPS) mode in which a common electrode and a pixel electrode are formed on the same substrate. By applying the device, it is possible to provide a position sensing liquid crystal display device having improved position sensing ability and screen quality by preventing short circuit defects and signal interference between a black matrix formed on a C / F substrate and a common electrode.
기타 본 발명의 목적 및 특징은 이하의 발명의 구성 및 특허청구범위에서 상세히 기술될 것이다.Other objects and features of the present invention will be described in detail in the configuration and claims of the following invention.
도 1은 일반적인 액정표시장치의 단면을 도시한 단면도.1 is a cross-sectional view showing a cross section of a general liquid crystal display device.
도 2는 일체형 위치감지 액정표시장치에 있어서 칼라필터 기판의 평면을 도시한 평면도.2 is a plan view showing a plane of a color filter substrate in an integrated position sensing liquid crystal display device;
도 3은 종래 일체형 위치감지 액정표시장치의 개략도.3 is a schematic view of a conventional integrated position sensing liquid crystal display device.
도 4a내지 도 4b는 본 발명의 일체형 위치감지 액정표시장치에 따른 제1실시예.4A to 4B illustrate a first embodiment of an integrated position sensing liquid crystal display device of the present invention.
도 5는 본 발명의 일체형 위치감지 액정표시장치에 따른 제2실시예.5 is a second embodiment of an integrated position sensing liquid crystal display of the present invention;
도 6은 본 발명의 일체형 위치감지 액정표시장치에 다른 제3실시예.6 is a third embodiment of the integrated position sensing liquid crystal display of the present invention;
*** 도면의 주요부분에 대한 부호의 설명 ****** Explanation of symbols for main parts of drawing ***
102:게이트전극103:게이트절연막102 gate electrode 103 gate insulating film
104:반도체층 105:오믹콘택층:104: semiconductor layer 105: ohmic contact layer:
106a:소스전극106b:드레인전극106a: source electrode 106b: drain electrode
107:보호막108:화소전극107: protective film 108: pixel electrode
122:블랙매트릭스128:공통전극122: black matrix 128: common electrode
123:칼라필터125:오버코트막123: color filter 125: overcoat film
상기와 같은 목적을 달성하기 위한 본 발명의 위치감지 액정표시장치는 블랙매트릭스와 칼라필터를 포함하고 있는 C/F 기판과 공통전극과 화소전극 그리고 박막트랜지스터(TFT)를 포함하고 있는 TFT 기판이 액정층을 사이에 두고 서로 대향하고 있으며, 상기 블랙매트릭스는 광차단(light shield) 및 위치인식전극으로써 역할을 하며 각각의 적색(R), 녹색(G), 청색(B) 칼라필터 사이에 메쉬(mesh) 형태로 형성되어 있다.In order to achieve the above object, the position sensing liquid crystal display device of the present invention is a C / F substrate including a black matrix and a color filter, a TFT substrate including a common electrode, a pixel electrode, and a thin film transistor (TFT). The black matrices serve as light shields and position sensing electrodes, and meshes between the red (R), green (G), and blue (B) color filters. mesh).
또한, 박막트랜지스터(TFT)는 게이트 전극, 게이트 절연막, 소스/드레인 전극 및 반도체층과 오믹컨택층을 포함하는 액티브층으로 구성된다.The thin film transistor TFT is formed of a gate electrode, a gate insulating film, a source / drain electrode, and an active layer including a semiconductor layer and an ohmic contact layer.
상기와 같이 구성된 본 발명의 위치감지 액정표시장치는 공통전극과 화소전극이 동일한 기판(TFT 기판) 상에 형성되어 있기 때문에 블랙매트릭스와 공통전극 간의 커플링 현상 및 위치감지용 신호와 공통전극에 인가되는 신호간의 간섭을 제거 할 수 있다.Since the common electrode and the pixel electrode are formed on the same substrate (TFT substrate), the position sensing liquid crystal display device according to the present invention configured as described above is applied to the coupling phenomenon and the position sensing signal and the common electrode between the black matrix and the common electrode. Interference between signals can be eliminated.
이하, 첨부한 도면을 통하여 본 발명에 따른 위치인식 액정표시장치에 대하여 상세히 설명하면 다음과 같다.Hereinafter, the position recognition liquid crystal display according to the present invention will be described in detail with reference to the accompanying drawings.
도 4a 및 4b는 본 발명에 따른 위치인식 액정표시장치의 평면과 단면의 개략도를 도시한 것으로, 도 4a에 도시한 바와 같이, TFT 기판(110)에는 종횡으로 배치된 게이트 라인(124) 및 데이터 라인(160)에 의해 화소영역이 정의되는데, 실제의 액정 패널은 수많은 화소 영역으로 구성되어 있지만 도면에는 설명의 편의를 위해 한 화소만을 도시하였다.4A and 4B are schematic views of a plane and a cross-sectional view of the position recognition liquid crystal display according to the present invention. As shown in FIG. 4A, gate lines 124 and data arranged vertically and horizontally on the TFT substrate 110 are illustrated. The pixel area is defined by the line 160. Although the actual liquid crystal panel is composed of many pixel areas, only one pixel is shown in the drawing for convenience of description.
상기 화소영역(110) 내에는 게이트 라인(124)과 평행한 공통라인(130)이 배열되어 있으며, 게이트 라인(124)과 데이터 라인(160)의 교차점에는 박막트랜지스터(Thin Film Transistor)가 형성되어 있다. 박막트랜지스터는 도 4b에 도시한 바와 같이 게이트 전극(102), 게이트 절연막(103), 소스/드레인 전극(6a,6b), 반도체층(104), 오믹콘택층(105) 및 소스/드레인 전극(6a,6b)으로 구성되며, 게이트 라인(124) 및 데이터 라인(160)에 접속된다. 또한, 게이트 전극(102) 상부 및 기판 전체에 걸쳐서 게이트 절연막(103)이 도포되어 있다.A common line 130 parallel to the gate line 124 is arranged in the pixel region 110, and a thin film transistor is formed at the intersection of the gate line 124 and the data line 160. have. As shown in FIG. 4B, the TFT may include a gate electrode 102, a gate insulating layer 103, source / drain electrodes 6a and 6b, a semiconductor layer 104, an ohmic contact layer 105, and a source / drain electrode ( 6a and 6b and is connected to the gate line 124 and the data line 160. In addition, a gate insulating film 103 is applied over the gate electrode 102 and the entire substrate.
화소영역에는 서로 평행한 공통전극(128) 및 화소전극(108)이 형성되어 있다. 공통전극(128)은 기판(101) 위에 게이트 전극(102)과 동시에 형성되어 공통라인(140)에 접속되며, 화소전극(108)은 게이트 절연막(103) 위에 소스/드레인 전극(6a,6b)과 동시에 형성되며 박막트랜지스터의 소스/드레인 전극(6a,6b)과 접속된다. 그리고, 상기 기판 전체에 걸쳐서 보호막(107) 및 제1배향막이 도포되어 있다.The common electrode 128 and the pixel electrode 108 which are parallel to each other are formed in the pixel region. The common electrode 128 is formed on the substrate 101 at the same time as the gate electrode 102 and connected to the common line 140. The pixel electrode 108 is formed on the gate insulating layer 103 by the source / drain electrodes 6a and 6b. Is formed at the same time and is connected to the source / drain electrodes 6a and 6b of the thin film transistor. A protective film 107 and a first alignment film are applied over the entire substrate.
C/F 기판(120)에는 박막트랜지스터, 게이트 라인(124), 데이터 라인(160)으로 빛이 새는 것을 방지할 뿐 아니라 위치감지전극으로 사용되는 블랙매트릭스(122)와 칼라필터(123) 및 칼라필터의 평탄화를 위한 오버코팅막(125)이 형성되어 있으며, 그 위에 제2배향막(129)이 도포되어 있다. 또한, C/F 기판(120)과 TFT 기판(110) 사이에는 액정층(130)이 형성된다. 상기 블랙매트릭스(122)는 광차단막 및 위치감지전극으로 사용되기 때문에 위치감지신호를 인가하기 위한 별도의 신호인가부가 형성되어 있다.The C / F substrate 120 has a black matrix 122, a color filter 123, and a color, which not only prevent light leakage from the thin film transistor, the gate line 124, and the data line 160, but also serve as position sensing electrodes. An overcoat 125 is formed to planarize the filter, and a second alignment layer 129 is coated thereon. In addition, the liquid crystal layer 130 is formed between the C / F substrate 120 and the TFT substrate 110. Since the black matrix 122 is used as a light blocking film and a position sensing electrode, a separate signal applying unit for applying a position sensing signal is formed.
상기와 같은 구조의 액정표시장치에서 전압이 인가되지 않는 경우에는 액정층(130) 내의 액정분자가 제1배향막(109) 및 제2배향막(129)의 배향방향에 따라 배향되지만, 외부구동회로로부터 박막트랜지스터를 통해 전압이 인가되면 공통전극(128)과 화소전극(108) 사이에 기판의 표면과 평행한 횡전계가 형성된다. 이 횡전계에 의해 제1배향막(109)과 제2배향막(129)의 배향방향을 따라 배향된 액정분자가 기판(101)과 수평하게 스위칭되기 때문에 블랙매트릭스(122)에 인가되는 위치감지신호에 무관하게 화소전압이 액정에 인가된다.In the liquid crystal display device having the above structure, when no voltage is applied, the liquid crystal molecules in the liquid crystal layer 130 are aligned in accordance with the alignment directions of the first alignment layer 109 and the second alignment layer 129. When a voltage is applied through the thin film transistor, a transverse electric field parallel to the surface of the substrate is formed between the common electrode 128 and the pixel electrode 108. Since the liquid crystal molecules oriented along the alignment direction of the first alignment layer 109 and the second alignment layer 129 by the transverse electric field are switched horizontally with the substrate 101, the position sensing signal applied to the black matrix 122 is applied to the position detection signal. Regardless, the pixel voltage is applied to the liquid crystal.
종래 TN(twisted nematic) 모드에서는 공통전극과 블랙매트릭스가 오버코팅막을 사이에 두고 동일한 기판 상에 형성되어 있었기 때문에 공통전극과 블랙매트릭스에 신호를 인가하게 되면 두 전극 사이에 커플링이 발생하여 신호간섭을 일으켜 공통전압 Vcom이 왜곡되는 문제가 있었다. 또한, 절연막으로 이루어진 오버코팅막에 공정불량으로 인하여 홀이 형성된 경우에는 이 홀을 통하여 공통전극과 블랙매트릭스 간의 단락(opening) 발생 문제가 있었다.In the conventional twisted nematic (TN) mode, since the common electrode and the black matrix are formed on the same substrate with the overcoating layer interposed therebetween, when a signal is applied to the common electrode and the black matrix, coupling occurs between the two electrodes. There is a problem that the common voltage Vcom is distorted. In addition, when a hole is formed in an overcoating layer made of an insulating layer due to a process defect, there is a problem of opening between the common electrode and the black matrix through the hole.
그러나, 본 발명에서는 공통전극을 TFT 기판에 형성함으로써, 공통전극과 블랙매트릭스에 신호가 인가되더라도 공통전극과 블랙매트릭스는 서로 다른 기판 상에 형성되어 있기 때문에 이들간의 신호간섭을 막을 수가 있다. 또한, 공정상의 불량 때문에 오버코팅막에 형성된 홀(hole)로 인해서 공통전극과 블랙매트릭스 간의 단락 불량을 제거할 수 있다.However, in the present invention, by forming the common electrode on the TFT substrate, even if a signal is applied to the common electrode and the black matrix, the common electrode and the black matrix are formed on different substrates, thereby preventing signal interference therebetween. In addition, short circuit defects between the common electrode and the black matrix can be eliminated due to holes formed in the overcoating layer due to process defects.
도 5내지 도 6은 본 발명의 다른 실시예들을 도시한 것이다.5 to 6 show other embodiments of the invention.
먼저, 도 5에 도시한 것은 투명한 금속으로 이루어진 공통전극(128)이 보호막(107) 위에 형성된 구조로써, 불투명한 금속으로 이루어진 공통전극 및 화소전극으로 형성된 제1실시예에 비해 개구율을 대폭 향상시킬 수 있다.First, as shown in FIG. 5, the common electrode 128 made of a transparent metal is formed on the passivation layer 107, and the aperture ratio of the common electrode 128 made of an opaque metal and the pixel electrode can be greatly improved. Can be.
또한, 도 6에 도시한 것은 투명한 금속으로 이루어진 공통전극(128)이 게이트 절연막(103)위에 화소전극(108)과 동일한 평면상에 형성됨으로써, 두 전극(공통전극/화소전극) 사이에 전압이 인가될 때 기판의 표면과 완전하게 평행한 횡전게의 발생으로 인해 제1 및 제2실시예에 비해서 시야각을 더욱 향상시킬 수가 있다.6, the common electrode 128 made of a transparent metal is formed on the same plane as the pixel electrode 108 on the gate insulating film 103, so that a voltage between two electrodes (common electrode / pixel electrode) When applied, the generation of transverse electric charges completely parallel to the surface of the substrate makes it possible to further improve the viewing angle as compared with the first and second embodiments.
상기 제2,3실시예에서 공통전극으로 사용되는 투명한 금속은 ITO(Indium Tin Oxide)로 이루어진 것이다.In the second and third embodiments, the transparent metal used as the common electrode is made of indium tin oxide (ITO).
상기 실시예들에서 살펴본 바와 같이 본 발명은 공통전극과 화소전극이 동일 기판상에 형성되어 있기 때문에, 위치감지를 위해 블랙매트릭스(위치감지전극)으로 인가되는 신호와 공통전극에 인가되는 신호간의 간섭을 막아 노이즈를 제거함으로써, 위치감지능력을 향상시킬 수 있을 뿐 아니라 공통전압(Vcom)의 왜곡을 막아 화면의 질을 향상시킬 수 있다.As described in the above embodiments, since the common electrode and the pixel electrode are formed on the same substrate, the interference between the signal applied to the black matrix (position sensing electrode) and the signal applied to the common electrode for position sensing By removing the noise by removing the noise, not only the position sensing ability can be improved but also the distortion of the common voltage Vcom can be prevented to improve the screen quality.
상술한 바와 같이 본 발명은 종래 TN 모드에서 사용했던 일체형 위치감지 액정표시장치를 IPS 모드에 적용함으로써, 동일 기판상에 오버코팅막을 사이에 두고 형성되었던 B/M(위치감지전극)과 공통전극간의 단락 및 신호간섭에 의한 노이즈를 제거하여 위치감지능력을 향상시킬 수 있으며, 공통전압의 왜곡으로 인한 콘트라스트 저하를 막을 수는 효과가 있다.As described above, according to the present invention, the integrated position sensing liquid crystal display device used in the conventional TN mode is applied to the IPS mode, so that the B / M (position sensing electrode) and the common electrode formed on the same substrate with an overcoating layer therebetween. The position sensing ability can be improved by removing the noise due to short circuit and signal interference, and it is possible to prevent the contrast deterioration due to the distortion of the common voltage.
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