KR200371068Y1 - Hot n2 injection for semiconductor and lcd process - Google Patents
Hot n2 injection for semiconductor and lcd process Download PDFInfo
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- KR200371068Y1 KR200371068Y1 KR20-2004-0026509U KR20040026509U KR200371068Y1 KR 200371068 Y1 KR200371068 Y1 KR 200371068Y1 KR 20040026509 U KR20040026509 U KR 20040026509U KR 200371068 Y1 KR200371068 Y1 KR 200371068Y1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L53/00—Heating of pipes or pipe systems; Cooling of pipes or pipe systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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Abstract
본 고안은 반도체 및 엘시디 제조공정용 고온 질소 분사장치에 관한 것으로, 그 목적은 메인챔버에서 배기되는 폐가스가 저온의 배관을 통과할 때 생성될 수 있는 수분 응결을 방지하고, 자발 반응에 의해 형성된 고형 산화물을 스크러버까지 이송시키도록 몸체의 외부에 히터관을 설치하여 저온의 질소가스를 직접 고온의 질소가스로 변환하여 공급하도록 하는 반도체 및 엘시디 제조공정용 고온 질소 분사장치를 제공함에 있다. 이는 메인챔버에서 배기되는 가스가 유동되도록 유로가 형성되고, 상기 유로에 질소가 공급되는 복수개의 관통공이 형성된 몸체와, 상기 관통공에 대응되는 배출공이 형성된 내측부와, 상기 내측부의 외측으로 일정간격 이격되고, 외측으로 질소공급공이 형성된 외측부와, 상기 내측부와 외측부 사이에 설치된 히터로 이루어지고, 상기 내,외측부의 양단부가 폐쇄되어 상기 몸체의 외측에 결합되는 히터관을 포함하는 것이다.The present invention relates to a high temperature nitrogen injector for semiconductor and LCD manufacturing process, the purpose of which is to prevent the water condensation that can be generated when the waste gas exhausted from the main chamber passes through the low-temperature pipe, solid formed by the spontaneous reaction The present invention provides a high temperature nitrogen injector for a semiconductor and LCD manufacturing process for installing a heater tube outside the body to transfer oxide to a scrubber so as to directly convert a low temperature nitrogen gas into a high temperature nitrogen gas. The flow path is formed so that the gas exhausted from the main chamber flows, a body having a plurality of through holes through which nitrogen is supplied to the flow path, an inner part in which discharge holes corresponding to the through holes are formed, and spaced apart from the inner part by a predetermined distance. And a heater tube disposed between the inner side and the outer side with the nitrogen supply hole formed outside, and both ends of the inner and outer sides closed and coupled to the outside of the body.
Description
본 고안은 반도체 및 엘시디 제조공정용 고온 질소 분사장치에 관한 것으로, 더욱 상세하게는 메인챔버에서 배기되는 폐가스가 저온의 배관을 통과할 때 생성될 수 있는 수분 응결을 방지하고, 자발 반응에 의해 형성된 고형 산화물을 스크러버까지 이송시키도록 몸체의 외부에 히터관을 설치하여 저온의 질소가스를 직접 고온의 질소가스로 변환하여 공급하도록 하는 반도체 및 엘시디 제조공정용 고온 질소 분사장치에 관한 것이다.The present invention relates to a high temperature nitrogen injector for semiconductor and LCD manufacturing process, more specifically to prevent moisture condensation that may be generated when the waste gas exhausted from the main chamber passes through the low-temperature pipe, and formed by the spontaneous reaction The present invention relates to a high temperature nitrogen injector for a semiconductor and an LCD manufacturing process for installing a heater tube on the outside of a body to transfer a solid oxide to a scrubber so as to directly convert a low temperature nitrogen gas into a high temperature nitrogen gas.
일반적으로 반도체 및 엘시디 공정에서 사용되는 가스는 제조 공정을 거치 후 폐가스 처리장치(Scrubber)에 도착하기 전에 일부가 자발 반응하여 고형 산화물(Oxide powder)형태로 배관 내에 쌓이게 되는데. 이러한 고형 산화물은 응결된 수분과 함께 배관을 막아 버려 전체적인 생산 일정을 늦추는 주원인으로 작용한다.In general, the gas used in the semiconductor and LCD process is spontaneously reacted and accumulated in the pipe in the form of solid oxide (Oxide powder) before it reaches the waste gas treatment device (Scrubber) after the manufacturing process. These solid oxides, along with the condensed water, clog the piping and act as the main cause of delaying the overall production schedule.
상기와 같이 배관내에 형성된 고형 산화물은 고온의 질소가스를 배관에 공급함으로써, 제거가능하다.The solid oxide formed in the pipe as described above can be removed by supplying hot nitrogen gas to the pipe.
상기와 같은 고온 질소 공급장치의 일례에 대한 종래의 예로서는, 등록실용신안 등록번호특허 공개번호 2004-0075140의 "반도체 및 엘시디의 생산공정에 사용되는 질소공급용 배관"에서 찾아 볼 수 있다.As a conventional example of the above-described high temperature nitrogen supply apparatus, it can be found in the "nitrogen supply piping used for the production process of semiconductors and LCDs" of the registered utility model registration No. 2004-0075140.
도 1은 종래에 따른 반도체 및 엘시디의 제조공정용 고온 질소 공급장치의일예를 나타낸 도면이다.1 is a view showing an example of a high temperature nitrogen supply apparatus for manufacturing a semiconductor and an LCD according to the prior art.
도시한 바와 같이 반도체 및 LCD 생산공정시 질소공급장치로부터 공급된 고온의 질소가스를 배관부에 주입하기 위한 질소공급용 배관에 있어서, 좌.우 양쪽은 소정의 배관부와 결합되기 위해 개방된 원통형의 몸체(1)가 있고, 상기 몸체(1)의 중앙부에는 외주면을 따라 공간부가 형성되도록 외벽(2)이 장착되며, 상기 외벽(2) 일측에는 별도로 장착된 질소공급기(5)로 부터 공급된 고온의 질소가스가 주입되는 질소 주입부(3)가 형성되고, 상기 질소 주입부(3)를 통하여 주입된 질소가스가 몸체(1) 내부로 분사되기 위한 분사공(4)이 몸체(1) 중앙부의 내주면을 따라 일렬로 배열되되, 상기 분사공(4)은 표측에서 부터 내측으로 경사각을 갖도록 형성된 것이다.As shown in the figure, in a nitrogen supply pipe for injecting high temperature nitrogen gas supplied from a nitrogen supply device in a semiconductor and LCD production process into a pipe, both left and right cylinders are opened to be coupled to a predetermined pipe part. There is a body (1), the outer wall (2) is mounted so that the central portion of the body (1) is formed along the outer circumferential surface, and supplied from the nitrogen supply (5) separately mounted on one side of the outer wall (2) A nitrogen injection unit 3 through which high temperature nitrogen gas is injected is formed, and injection holes 4 for injecting nitrogen gas injected through the nitrogen injection unit 3 into the body 1 include a body 1. Arranged in a line along the inner circumferential surface of the central portion, the injection hole 4 is formed to have an inclination angle from the front side to the inside.
상기와 같이 구성된 질소공급용 배관은 질소공급기(5)로부터 공급된 고온의 질소가스가 질소 주입부(3)를 통하여 외벽(2)에 의해 형성된 공간부에 충진되고, 이와 같이 공간부에 충진된 질소가스는 질소 주입부(3)로 부터 계속적인 유입으로 인하여 소정의 압력에 의해 몸체(1)의 내주면을 따라 배열된 분사공(4)을 통하여 방향성과 회전성을 갖은 채 몸체(1) 내부로 분사되는 것이다.In the nitrogen supply pipe configured as described above, the high temperature nitrogen gas supplied from the nitrogen supplier 5 is filled in the space formed by the outer wall 2 through the nitrogen inlet 3, and thus filled in the space. Nitrogen gas is directional and rotatable through the injection holes 4 arranged along the inner circumferential surface of the body 1 by a predetermined pressure due to the continuous inflow from the nitrogen inlet 3. To be sprayed.
그러나, 상기와 같은 질소공급용 배관은 질소공급기(5)에서 공급되는 가스를 단순히 배관 내부에 공급하도록 하여 질소공급기(5)에서 배관에 이르는 과정에서 보온성이 저하되는 문제점이 있다.However, the nitrogen supply pipe as described above has a problem that the heat retention is reduced in the process from the nitrogen supply (5) to the pipe by simply supplying the gas supplied from the nitrogen supply (5) inside the pipe.
본 고안은 이러한 종래의 문제점을 해결하기 위하여 이루어진 것으로, 그 목적은 메인챔버에서 배기되는 폐가스가 저온의 배관을 통과할 때 생성될 수 있는 수분 응결을 방지하고, 자발 반응에 의해 형성된 고형 산화물을 스크러버까지 이송시키도록 몸체의 외부에 히터관을 설치하여 저온의 질소가스를 직접 고온의 질소가스로 변환하여 공급하도록 하는 반도체 및 엘시디 제조공정용 고온 질소 분사장치를 제공함에 있다.The present invention has been made to solve such a conventional problem, and its purpose is to prevent moisture condensation that may be generated when the waste gas exhausted from the main chamber passes through a low temperature pipe, and scrubber the solid oxide formed by the spontaneous reaction. It is to provide a high temperature nitrogen injection device for the semiconductor and LCD manufacturing process to install a heater tube on the outside of the body to be transferred to the supply to convert the low temperature nitrogen gas directly to a high temperature nitrogen gas.
도 1은 종래에 따른 반도체 및 엘시디의 제조공정용 고온 질소 공급장치의 일예를 나타낸 도면.1 is a view showing an example of a high temperature nitrogen supply apparatus for manufacturing a semiconductor and an LCD according to the prior art.
도 2는 본 고안에 따른 반도체 및 엘시디 제조공정용 고온 질소 분사장치를 나타낸 사시도.Figure 2 is a perspective view showing a high temperature nitrogen injector for semiconductor and LCD manufacturing process according to the present invention.
도 3은 본 고안에 따른 반도체 및 엘시디 제조공정용 고온 질소 분사장치를 나타낸 단면도.Figure 3 is a cross-sectional view showing a high temperature nitrogen injector for semiconductor and LCD manufacturing process according to the present invention.
도 4는 본 고안에 따른 공정 적용 흐름도.4 is a process application flow diagram according to the present invention.
(도면중 주요 부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)
10: 몸체 11: 유로10: body 11: euro
12: 관통공 20: 히터관12: through hole 20: heater tube
21: 내측관 21a: 배출공21: inner tube 21a: discharge hole
22: 외측관 22a: 질소공급공22: outer tube 22a: nitrogen supply hole
23: 중간부 23a: 연통공23: middle part 23a: communication hole
24: 히터 30: 질소공급관24: heater 30: nitrogen supply pipe
31: 체크밸브 40: 질소온도센서31: check valve 40: nitrogen temperature sensor
50: 히터온도센서50: heater temperature sensor
이러한 목적을 달성하기 위한 본 고안은 메인챔버에서 배기되는 가스가 유동되도록 유로가 형성되고, 상기 유로에 질소가 공급되는 복수개의 관통공이 형성된 몸체와, 상기 관통공에 대응되는 배출공이 형성된 내측부와, 상기 내측부의 외측으로 일정간격 이격되고, 외측으로 질소공급공이 형성된 외측부와, 상기 내측부와 외측부 사이에 설치된 히터로 이루어지고, 상기 내,외측부의 양단부가 폐쇄되어 상기 몸체의 외측에 결합되는 히터관을 포함하는 것이다.The present invention for achieving the above object is a flow path is formed so that the gas is exhausted from the main chamber, the body is formed with a plurality of through holes through which the nitrogen is supplied, and the inner portion is formed with discharge holes corresponding to the through holes; The heater tube is spaced apart by a predetermined interval to the outside of the inner portion, the outer portion formed with a nitrogen supply hole to the outside, and a heater installed between the inner portion and the outer portion, the both ends of the inner and outer portions are closed and coupled to the outside of the body It is to include.
또한, 상기 히터관의 히터와 외측부 사이에는 중간부가 형성되며, 상기 중간부에 복수의 연통공이 형성된 것이다.In addition, an intermediate portion is formed between the heater and the outer portion of the heater tube, a plurality of communication holes are formed in the intermediate portion.
이하 본 고안의 바람직한 실시예를 첨부된 도면에 의거하여 상세하게 설명하면 다음과 같다.Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.
도 2 및 도 3은 본 고안에 따른 반도체 및 엘시디 제조공정용 고온 질소 분사장치를 나타낸 도면이다.2 and 3 is a view showing a high temperature nitrogen injector for semiconductor and LCD manufacturing process according to the present invention.
도시한 바와 같이 본 고안의 반도체 및 엘시디 제조공정용 고온 질소 분사장치는 몸체(10)와 히터관(20)으로 크게 구성되어 있다.As shown, the high temperature nitrogen injector for the semiconductor and LCD manufacturing process of the present invention is largely composed of a body 10 and a heater tube 20.
상기 몸체(10)는 메인챔버에서 배기되는 가스가 유동되도록 유로(11)가 형성되고, 상기 유로(11)에 질소가 공급되는 복수개의 관통공(12)이 형성되어 있다.The body 10 has a flow path 11 formed to flow the gas exhausted from the main chamber, and a plurality of through holes 12 through which nitrogen is supplied to the flow path 11 are formed.
상기 히터관(20)은 상기 몸체(10)의 외측에 결합되는 것으로, 내측부(21), 외측부(22), 중간부(23) 및 히터(24)로 구성되어 있다.The heater tube 20 is coupled to the outside of the body 10, and is composed of an inner portion 21, an outer portion 22, an intermediate portion 23 and the heater 24.
상기 내측부(21), 외측부(22) 및 중간부(23)는 양단부가 폐쇄되어 있으며, 상기 내측부(21)와 중간부(23) 사이에 히터(24)가 위치되어진다.Both ends of the inner part 21, the outer part 22, and the middle part 23 are closed, and a heater 24 is positioned between the inner part 21 and the middle part 23.
또한, 상기 내측부(21)에는 상기 몸체(10)에 관통공(12)에 대응되는 배출공(21a)이 형성되어 있다.In addition, the inner part 21 is formed with a discharge hole 21a corresponding to the through hole 12 in the body 10.
또한, 상기 외측부(22)는 상기 내측부(21)의 외측으로 일정간격 이격되고, 외측으로 질소공급공(22a)이 형성된어 있다.In addition, the outer portion 22 is spaced apart at a predetermined interval to the outside of the inner portion 21, the nitrogen supply hole (22a) is formed on the outside.
상기에서 질소공급공(22a)에 공급되는 질소는 저온의 질소이며, 질소공급공(22a)으로 유입되어 히터(24)에 의해 고온의 질소로 변환되는 것이다.The nitrogen supplied to the nitrogen supply hole 22a is low temperature nitrogen, and is introduced into the nitrogen supply hole 22a to be converted into high temperature nitrogen by the heater 24.
또한, 상기 중간부(23)에는 복수의 연통공(23a)이 형성되어 질소공급공(22a)으로 유입되는 질소를 히터(24)에 골고루 공급되도록 한다.In addition, the intermediate portion 23 has a plurality of communication holes (23a) is formed so that the nitrogen flowing into the nitrogen supply hole (22a) is evenly supplied to the heater (24).
또한, 상기 히터관(20)의 외측부(22)에 형성된 질소공급공(22a)에 연결된 질소공급관(30)에는 체크밸브(31)가 설치되어 질소가 역류되는 것을 방지하도록 하며, 몸체(10)의 내부에는 질소온도센서(40)가 설치되도록 하고, 히터(24)의 온도를 감지하는 히터온도센서(50)가 설치되도록 하여 히터(24) 및 공급되는 질소의 온도를 제어하도록 한다.In addition, the check valve 31 is installed in the nitrogen supply pipe 30 connected to the nitrogen supply hole 22a formed in the outer portion 22 of the heater tube 20 to prevent the backflow of nitrogen, the body 10 The inside of the nitrogen temperature sensor 40 is to be installed, so that the heater temperature sensor 50 for detecting the temperature of the heater 24 is installed to control the temperature of the heater 24 and the supplied nitrogen.
도 4는 본 고안에 따른 공정 적용 흐름도이다.4 is a flowchart illustrating a process application according to the present invention.
도시한 바와 같이 가스는 반도체 제조가 이루어지는 챔메인버(200)에서 진공펌프(300)에 의해 폐가스가 배출밸브(400)로 안내되는데 본 고안의 고온 질소분사장치(100)는 진공펌프(300)와 배출밸브(400) 사이에 설치되는 것이다.As shown in the gas, waste gas is guided to the discharge valve 400 by the vacuum pump 300 in the chamber 200 in which the semiconductor is manufactured. The high temperature nitrogen injection device 100 of the present invention is a vacuum pump 300. And is installed between the discharge valve 400.
또한, 상기 배출밸브(400)는 배기되는 가스 종류에 따라 건식 스크러버(Dry scrubber)(500)와 습식 스크러버(Wet scrubber)(600)로 방향을 전환하게 된다.In addition, the discharge valve 400 is diverted to the dry scrubber (500) and the wet scrubber (Wet scrubber) 600 according to the type of the exhaust gas.
이때 메인챔버(200)를 통과한 폐가스는 배관을 통과할 때 수분 응결이 발생되며, 자발 반응에 의해 고형 산화물이 형성되어지게 되는데 이를 방지하기 위해 본 고안의 고온 질소 분사장치(100)에서 고온의 질소가 배출밸브(400)를 포함한 배관라인에 콘트롤러(700)의 제어에 의해 공급되어지는데 이를 상세히 살펴보면 다음과 같다.At this time, when the waste gas passing through the main chamber 200 passes through the pipe, water condensation is generated, and solid oxide is formed by spontaneous reaction. Nitrogen is supplied to the piping line including the discharge valve 400 by the control of the controller 700. Looking at this in detail.
먼저, 본 고안의 고온 질소 분사장치의 몸체(10)의 유로(11)를 통해 폐가스가 유동되고, 저온의 질소가스가 질소가스공급관(30)을 통해 히터관(20)의 외측부(22)에 형성된 질소공급공(22a)으로 공급되어 진다.First, the waste gas flows through the flow path 11 of the body 10 of the high temperature nitrogen injector of the present invention, and the low temperature nitrogen gas flows to the outer portion 22 of the heater tube 20 through the nitrogen gas supply pipe 30. It is supplied to the formed nitrogen supply hole (22a).
상기 질소공급공(22a)으로 유입된 저온의 질소는 중간부(23)의 복수의 연통공(23a)을 통해 히터(24)가 위치되어진 격실에 공급되어져 히터(24)에 의해 고온의 질소로 변화된 상태에서 내측부(21)의 배출공(21a) 및 몸체(10)의 관통공(12)을 통해 몸체(10)의 유로(11)에 골고루 공급되어 폐가스와 함께 배출밸브(400)를 포함한 배관라인을 통해 건식 스크러버(Dry scrubber)(500)과 습식 스크러버(Wet scrubber)(600)에서 처리된다.The low temperature nitrogen introduced into the nitrogen supply hole 22a is supplied to the compartment in which the heater 24 is located through the plurality of communication holes 23a of the intermediate portion 23 and is supplied to the high temperature nitrogen by the heater 24. The pipe including the discharge valve 400 with the waste gas is uniformly supplied to the flow path 11 of the body 10 through the discharge hole 21a of the inner portion 21 and the through hole 12 of the body 10 in the changed state. The lines are processed in dry scrubber 500 and wet scrubber 600.
이때 배관라인 등에 형성된 수분 응결 및 자발 반응에 의해 형성된 고형 산화물을 제거하게 된다.At this time, the solid oxide formed by the water condensation and the spontaneous reaction formed in the piping line is removed.
이때 몸체(10) 내부에 설치된 질소온도센서(40)외 히터(24)의 온도을 감지하는 히터온도센서(50)에 의해 히터(24) 및 공급되는 질소의 온도를 컨트롤러(700)에서 제어하게 된다.At this time, the temperature of the heater 24 and the supplied nitrogen is controlled by the controller 700 by the heater temperature sensor 50 sensing the temperature of the heater 24 other than the nitrogen temperature sensor 40 installed in the body 10. .
이상 상세히 설명한 바와 같은 본 고안의 반도체 및 엘시디 제조공정용 고온 질소 분사장치는 메인챔버에서 배기되는 폐가스가 저온의 배관을 통과할 때 생성될 수 있는 수분 응결을 방지하고, 자발 반응에 의해 형성된 고형 산화물을 스크러버까지 이송시키도록 몸체(10)의 외부에 히터관을 설치하여 저온의 질소가스를 직접 고온의 질소가스로 변환하여 공급하도록 함으로서, 크리링의 주기를 연장시킬 수 있고, 전체적인 생산 일정 단축에 기여 할 수 있다.The high temperature nitrogen injector for the semiconductor and LCD manufacturing process of the present invention as described in detail above prevents moisture condensation that may be generated when the waste gas exhausted from the main chamber passes through a low temperature pipe, and is formed by a spontaneous reaction. By installing a heater tube on the outside of the body 10 so as to transfer the scrubber to the scrubber to convert the low temperature nitrogen gas directly into the high temperature nitrogen gas, it is possible to extend the cycle of the creing and contribute to shortening the overall production schedule. can do.
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| KR20-2004-0026509U KR200371068Y1 (en) | 2004-09-15 | 2004-09-15 | Hot n2 injection for semiconductor and lcd process |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101544534B1 (en) | 2013-10-24 | 2015-08-13 | (주)나린테크 | Apparatus for Injecting Gas |
| KR20160039827A (en) * | 2014-10-02 | 2016-04-12 | (주)나린테크 | Apparatus for Injecting Gas |
| WO2022164292A1 (en) * | 2021-02-01 | 2022-08-04 | 최흥엽 | Pipe clogging prevention device |
| CN114963234A (en) * | 2022-06-29 | 2022-08-30 | 北京北方华创微电子装备有限公司 | Ignition device of semiconductor process equipment and semiconductor process equipment |
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2004
- 2004-09-15 KR KR20-2004-0026509U patent/KR200371068Y1/en not_active IP Right Cessation
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101544534B1 (en) | 2013-10-24 | 2015-08-13 | (주)나린테크 | Apparatus for Injecting Gas |
| KR20160039827A (en) * | 2014-10-02 | 2016-04-12 | (주)나린테크 | Apparatus for Injecting Gas |
| KR101658590B1 (en) * | 2014-10-02 | 2016-09-30 | (주)나린테크 | Apparatus for Injecting Gas |
| WO2022164292A1 (en) * | 2021-02-01 | 2022-08-04 | 최흥엽 | Pipe clogging prevention device |
| CN114963234A (en) * | 2022-06-29 | 2022-08-30 | 北京北方华创微电子装备有限公司 | Ignition device of semiconductor process equipment and semiconductor process equipment |
| CN114963234B (en) * | 2022-06-29 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Ignition device of semiconductor process equipment and semiconductor process equipment |
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