KR200332929Y1 - heat sink device of the semiconductor element - Google Patents
heat sink device of the semiconductor element Download PDFInfo
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- KR200332929Y1 KR200332929Y1 KR20-2003-0019950U KR20030019950U KR200332929Y1 KR 200332929 Y1 KR200332929 Y1 KR 200332929Y1 KR 20030019950 U KR20030019950 U KR 20030019950U KR 200332929 Y1 KR200332929 Y1 KR 200332929Y1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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Abstract
본 고안은 전자시스템내에서 특정기능을 수행하는 반도체소자와, 상기 반도체소자의 상면부와 접촉하는 하부 바닥면에 압력조절용 액체를 주입할 수 있는 공간부가 형성되고 이 공간부의 중심부와 외부표면사이에 압력체크밸브가 달린 중공 압력관이 설치된 히트씽크로 구성된 반도체소자의 방열장치를 제공한다.The present invention provides a semiconductor device that performs a specific function in an electronic system, and a space portion for injecting a pressure regulating liquid into a lower bottom surface in contact with the upper surface portion of the semiconductor device is formed between the central portion and the outer surface of the space portion. Provided is a heat dissipation device for a semiconductor device composed of a heat sink equipped with a hollow pressure pipe with a pressure check valve.
상기와 같은 본 고안은 히트씽크의 하부 바닥면에 압력조절용 액체를 주입할 수 있는 공간부를 형성하고 이 공간부의 중심부와 히트씽크의 외부표면사이에 압력체크밸브가 달린 중공된 압력관을 설치하므로써, 공간부에 압력조절용 액체를 주입하여 반도체소자의 상부에 안치시킨후 압력관을 통해 공간부의 압력을 대기압이하로 조절하여 압착시킨 다음 외부의 접합조건에 관계없이 히트씽크를 반도체소자에 압착시킬 수 있어 히트씽크의 접착력저하를 가져올 가능성이 없으므로 그에 따라 반도체의 동작신뢰성을 확보할 수 있음은 물론 히트씽크와 반도체가 압력차에 의해 히트씽크의 표면거칠기에 따른 열전도도의 손실없이 열전달의 효율성을 극대화한다.The present invention as described above forms a space for injecting a pressure regulating liquid into the bottom surface of the heatsink and installs a hollow pressure tube with a pressure check valve between the center of the space and the outer surface of the heatsink. The pressure control liquid is injected into the upper part of the semiconductor device and placed in the upper part of the semiconductor device. Then, the pressure of the space part is adjusted to below atmospheric pressure through the pressure tube and compressed. Then, the heat sink can be pressed onto the semiconductor device regardless of external bonding conditions. It is not possible to bring about the decrease of adhesive force, so it is possible to secure the reliability of operation of the semiconductor, and the heat sink and the semiconductor maximize the efficiency of heat transfer without losing the thermal conductivity due to the surface roughness of the heat sink due to the pressure difference.
Description
본 고안은 반도체소자의 방열장치에 관한 것으로, 특히 히트씽크의 하부 바닥면에 압력조절용 액체를 주입할 수 있는 공간부를 형성하고 이 공간부의 중심부와 히트씽크의 외부표면사이에 압력체크밸브가 달린 중공된 압력관을 설치하는 반도체소자의 방열장치에 관한것이다.The present invention relates to a heat dissipation device for a semiconductor device, and in particular, a hollow space having a pressure check valve formed between a central portion of the space portion and an outer surface of the heat sink, in which a space for injecting a pressure regulating liquid is formed in the bottom surface of the heat sink. It relates to a heat dissipation device for a semiconductor device for installing a pressure tube.
일반적으로 전자 혹은 통신시스템은 제공되는 서비스 종류에 따라 다양한 종류의 시스템들이 사용될 수 있는데, 크게 분류하면 서비스 이용자 댁내에 설치되는단말장치, 그리고, 멀리 떨어진 두지점 사이에서 트래픽을 전달하는 전송시설 그리고 전송시설을 효율적으로 활용하기 위해 이용자들의 요청에 따라 연결을 변경하여 두 단말 장치 사이에서 통신회선이 선택적으로 구성되게 하는 교환기시스템 등이 있다. 또한, 최근에는 이러한 시스템에 디지털기술이 점목되어 그 기능이 급속도로 대용량화되어 이를 그 설치된 사향에 따라 정확히 제어하기 위해 통상 복잡한 구조의 반도체장치가 다수 구비된다.In general, various types of systems can be used for electronic or communication systems, depending on the type of service provided. In general, an electronic or communication system can be classified into a terminal device that is installed in a service user's home, and a transmission facility that transmits traffic between two remote locations. In order to effectively utilize the facility, there is an exchange system that changes the connection at the request of users so that a communication line is selectively configured between two terminal devices. Also, in recent years, digital technology has been taken into account in such systems, and its functions are rapidly increased in capacity, and thus, a semiconductor device having a complicated structure is usually provided in order to precisely control it according to its installed orientation.
그런데, 이러한 반도체장치들은 통상 동작시 열을 발생시키는데 이러한 열은 역으로 반도체소자에게 치명적인 요소로 작용할 수 있기 때문에 보통 반도체장치에는 히트씽크(heat sink)나 혹은 콜드플레이트(cold plate)가 부착되어 그러한 열들을 외부로 방출시킨다.However, these semiconductor devices generate heat during normal operation, and since such heat may act as a deadly factor to the semiconductor device, a heat sink or a cold plate is usually attached to the semiconductor device. Releases heat to the outside.
그러면, 상기와 같은 종래 반도체장치에 접착되는 히트씽크의 일례를 도 1을 참고로 살펴보면, 전자시스템내에서 특정기능을 수행하는 반도체소자(70)와, 상기 반도체소자(70)의 상면 전체에 밀착할 수 있는 크기로 형성되고 그 몸체상부에 방열핀(71)이 다수개 설치된 히트씽크(72)와, 상기 히트씽크(72)와 반도체소자(70)를 밀착시켜주는 열전도용 접착제(73)로 구성된다.Then, referring to FIG. 1, an example of the heat sink adhered to the conventional semiconductor device as described above, the semiconductor device 70 performing a specific function in the electronic system and the entire upper surface of the semiconductor device 70 The heat sink 72 is formed in a size that can be formed and a plurality of heat dissipation fins 71 are installed on the body, and the heat-conducting adhesive 73 for bringing the heat sink 72 and the semiconductor device 70 into close contact with each other. do.
한편, 상기와 같은 반도체소자의 방열장치를 접착하는 동작을 살펴보면, 먼저, 히트씽크(72)가 필요한 반도체소자(70)의 상면부를 정결히 한다음 반도체소자(70)의 상면과 일치하는 크기로 제작된 히트씽크(72)를 열전도용 접착제(73)를 게재로 완전히 서로 접착시킨다.Meanwhile, referring to the operation of adhering the heat dissipation device of the semiconductor device as described above, first, the upper surface of the semiconductor device 70 requiring the heat sink 72 is cleaned and then sized to match the upper surface of the semiconductor device 70. The manufactured heatsink 72 is completely adhered to each other by placing a heat conductive adhesive 73 thereon.
따라서, 상기와 같이 히트씽크(72)로 접착된 반도체소자(70)는 동작을 하는동안 열이 발생될 경우 이 열은 열전도용 접착제(73)를 경유하여 히트씽크(72)의 방열핀(71)을 통해 모두 방출된다. 그러므로, 상기 반도체소자(70)는 상기 히트씽크(72)를 통해 냉각되어 정상동작된다.Therefore, when heat is generated during the operation of the semiconductor device 70 bonded to the heat sink 72 as described above, the heat is radiated through the heat sink 72 through the heat conductive adhesive 73. All are released through. Therefore, the semiconductor device 70 is cooled through the heat sink 72 to operate normally.
그러나, 상기와 같은 종래 반도체소자의 방열장치는 주변의 조건 예컨대, 열전도용 접착제 주변의 온습도와 진동 등에 의하여 접착제의 접착성능이 저하되어 히드씽크와 반도체소자의 밀착성이 떨어지는 일이 빈번하기 때문에 그에 따라 반도체소자의 냉각이 충분하지 않을 경우 반도체소자가 정상작동하지 않거나 파손되는 일이 발생되었으며, 또한, 접착제를 이용하여 히트씽크와 반도체소자를 밀착시킬 경우 접착제가 일정수준 이상의 접착력을 가져주어야하는데, 이때 초기접착압력, 온도 등을 일정시간 이상을 유지하여 주어야하는 문제점이 있었다.However, in the heat dissipation device of the conventional semiconductor device as described above, the adhesive performance of the adhesive is degraded due to ambient temperature, for example, temperature and humidity and vibration around the adhesive for heat conduction, so that the adhesion between the heat sink and the semiconductor device is frequently decreased. If the cooling of the semiconductor device is insufficient, the semiconductor device may not work properly or may be damaged. In addition, when the heat sink and the semiconductor device are closely contacted with the adhesive, the adhesive should have a certain level of adhesive strength. There was a problem in that the initial adhesion pressure, temperature and the like must be maintained for a predetermined time or more.
이에 본 고안은 상기와 같은 종래 제반 문제점을 해결하기 위해 고안된 것으로, 공간부에 압력조절용 액체를 주입하여 반도체소자의 상부에 안치시킨후 압력관을 통해 공간부의 압력을 대기압이하로 조절하여 압착시킨 다음 외부의 접합조건에 관계없이 히트씽크를 반도체소자에 압착시킬 수 있어 히트씽크의 접착력저하를 가져올 가능성이 없으므로 그에 따라 반도체의 동작신뢰성을 확보할 수 있는 반도체소자의 방열장치를 제공함에 그 목적이 있다.Therefore, the present invention is designed to solve the conventional problems as described above, injecting a liquid for pressure control into the space and placing it in the upper portion of the semiconductor device to control the pressure of the space to below atmospheric pressure through the pressure tube and then press the outside The heat sink can be pressed onto the semiconductor device irrespective of the bonding conditions, so that it is not possible to reduce the adhesive strength of the heat sink. Accordingly, an object of the present invention is to provide a heat dissipation device of a semiconductor device capable of securing operational reliability of the semiconductor.
본 고안의 다른 목적은 히트씽크와 반도체가 압력차에 의해 히트씽크의 표면거칠기에 따른 열전도도의 손실없이 열전달의 효율성을 극대화하는 반도체소자의 방열장치를 제공하는데 있다.Another object of the present invention is to provide a heat dissipation device of a semiconductor device in which the heat sink and the semiconductor maximize the efficiency of heat transfer without losing the thermal conductivity due to the surface roughness of the heat sink due to the pressure difference.
상기와 같은 목적을 달성하기 위한 본 고안은 전자시스템내에서 특정기능을 수행하는 반도체소자와, 상기 반도체소자의 상면부와 접촉하는 하부 바닥면에 압력조절용 액체를 주입할 수 있는 공간부가 형성되고 이 공간부의 중심부와 외부표면사이에 압력체크밸브가 달린 중공 압력관이 설치된 히트씽크로 구성된 반도체소자의 방열장치를 제공한다.The present invention for achieving the above object is a semiconductor device that performs a specific function in the electronic system, and a space portion for injecting a pressure regulating liquid in the lower bottom surface in contact with the upper surface portion of the semiconductor device is formed The present invention provides a heat dissipation device for a semiconductor device composed of a heat sink provided with a hollow pressure tube having a pressure check valve between a central portion of a space and an outer surface thereof.
도 1은 반도체소자의 방열장치의 접착을 설명하는 설명도.BRIEF DESCRIPTION OF THE DRAWINGS Explanatory drawing explaining adhesion of the heat radiating apparatus of a semiconductor element.
도 2의 (a)-(c)는 본 고안의 히트씽크를 설명하는 설명도.(A)-(c) is explanatory drawing explaining the heat sink of this invention.
도 3은 본 고안장치의 적용을 설명하는 설명도.3 is an explanatory diagram illustrating the application of the present invention device.
<부호의 상세한 설명><Detailed Description of Codes>
1 : 반도체소자 2 : 공간부1 semiconductor device 2 space part
3 : 압력체크밸브 4 : 압력관3: pressure check valve 4: pressure pipe
5 : 히트씽크 6 : 방열핀5: heatsink 6: heat sink fin
이하, 본 고안을 첨부된 예시도면에 의거 상세히 설명한다.Hereinafter, the present invention will be described in detail based on the accompanying drawings.
본 고안 장치는 도 2의 (a)-(c)에 도시된 바와같이 전자시스템내에서 특정기능을 수행하는 반도체소자(1)와, 상기 반도체소자(1)의 상면부와 접촉하는 하부 바닥면에 압력조절용 액체를 주입할 수 있는 공간부(2)가 형성하고 이 공간부(2)의 중심부와 외부표면사이에 압력체크밸브(3)가 달린 중공된 압력관(4)이 설치된 히트씽크(5)로 구성된다.The device of the present invention has a semiconductor device 1 performing a specific function in an electronic system as shown in Figs. 2A to 2C, and a lower bottom surface in contact with an upper surface portion of the semiconductor device 1. A heat sink 5 formed with a hollow pressure tube 4 having a pressure check valve 3 formed therein between a central portion and an outer surface of the space portion 2 and having a space portion 2 for injecting a pressure-regulating liquid into the space; It is composed of
여기서, 상기 압력조절용 액체는 써멀 그리스(Themal Grease)를 포함한다.Here, the pressure adjusting liquid includes a thermal grease.
또한, 상기 히트씽크(5)는 반도체소자(1)의 상면부 전체에 밀착될 수 있는 크기로 형성되고 그 몸체상부에 방열핀(6)이 다수개 설치된다.In addition, the heat sink 5 is formed to have a size that can be in close contact with the entire upper surface portion of the semiconductor device 1 and a plurality of heat radiation fins 6 are provided on the body.
그리고, 상기 압력체크밸브(3)는 일방향으로 개폐되는 밸브이다.The pressure check valve 3 is a valve that opens and closes in one direction.
다음에는 상기와 같은 본 고안장치의 동작을 설명한다.Next, the operation of the inventive device as described above will be described.
본 고안장치의 조립은 먼저 도 3에 도시된 바와같이 히트씽크(5)가 필요한 반도체소자(1)의 상면부를 정결히 한다음 반도체소자(1)의 상면과 일치하는 크기로 제작된 히트씽크(5)의 하단에 설치된 공간부(2)에 압력조절용 액체 즉, 써멀 그리스(Themal Grease)를 도포한다. 그리고, 상기와 같은 과정을 통해 압력조절용 액체가 도포된 히트씽크(5)의 하단부를 반도체소자(1)의 상면부와 밀착시킨다. 그러면, 상기 도포된 압력조절용 액체가 반도체소자(1)의 상면과 히트씽크(5)의 공간부(2)사이에 밀착된다.The assembly of the device of the present invention first cleans the upper surface of the semiconductor device 1, which requires the heat sink 5, as shown in FIG. 3, and then heatsinks manufactured to the same size as the upper surface of the semiconductor device 1 ( A pressure adjusting liquid, that is, thermal grease, is applied to the space 2 installed at the bottom of 5). Then, the lower end portion of the heat sink 5 to which the pressure adjusting liquid is applied is brought into close contact with the upper surface portion of the semiconductor device 1 through the above process. Then, the applied pressure adjusting liquid is in close contact with the upper surface of the semiconductor device 1 and the space portion 2 of the heat sink 5.
이때, 상기 히트씽크(5)의 측면에 설치된 압력체크밸브(3)에 기압장치 예컨대, 진공펌프(도시안됨)와 같은 장비를 연결하고 압력관(4)을 통해 히트씽크(5)의 공간부(2)로부터 공기를 뽑아내어 상기 히트씽크(5)의 공간부(2)내의 기압이 대기압보다 낮아지게 한다.At this time, a device such as a pneumatic device, for example, a vacuum pump (not shown), is connected to the pressure check valve 3 installed on the side of the heat sink 5 and the space portion of the heat sink 5 through the pressure tube 4. Air is extracted from 2) so that the air pressure in the space 2 of the heat sink 5 is lower than atmospheric pressure.
그러면, 상기와 같은 과정을 통해 히트씽크(5)의 공간부(2)내의 기압이 대기압보다 낮아질 경우 이 낮은 기압차에 위해 압력조절용 액체 즉, 써멀 그리스가 히트씽크(5)의 공간부(2)와 반도체소자(1)의 상면부를 견고히 밀착시킨다.Then, when the air pressure in the space 2 of the heat sink 5 becomes lower than the atmospheric pressure through the above process, the pressure adjusting liquid, that is, the thermal grease, becomes the space portion 2 of the heat sink 5 for the low pressure difference. ) And the upper surface portion of the semiconductor device 1 are firmly brought into close contact.
따라서, 상기와 같은 본 고안에 따르면, 종래와 같이 주변의 조건 예컨대, 온습도와 진동 과 같은 요인에 의해 접착성능이 영향을 받는 접착제를 사용하지 않으므로 반도체소자의 방열특성을 열화시키지 않는다.Therefore, according to the present invention as described above, since it does not use the adhesive, the adhesive performance is affected by factors such as ambient conditions, for example, temperature and humidity and vibration as in the prior art does not deteriorate the heat radiation characteristics of the semiconductor device.
한편, 상기와 같은 본 고안의 장치에 의해 접착된 반도체소자(1)는 동작을 하는 동안 열이 발생될 경우 이 열은 써멀 그리스가 들어있는 히트씽크(5)의 공간부를 경유하여 히트씽크(5)의 방열핀(6)을 통해 모두 방출된다. 그러므로, 상기 반도체소자(1)는 상기 히트씽크(5)를 통해 냉각되어 정상동작된다.On the other hand, when heat is generated during the operation of the semiconductor device 1 bonded by the device of the present invention as described above, the heat is transferred to the heat sink 5 via the space portion of the heat sink 5 containing the thermal grease. All are released through the heat dissipation fin (6). Therefore, the semiconductor device 1 is cooled through the heat sink 5 and is operated normally.
이상 설명에서와 같이 본 고안은 히트씽크의 하부 바닥면에 압력조절용 액체를 주입할 수 있는 공간부를 형성하고 이 공간부의 중심부와 히트씽크의 외부표면사이에 압력체크밸브가 달린 중공된 압력관을 설치하므로써, 공간부에 압력조절용 액체를 주입하여 반도체소자의 상부에 안치시킨후 압력관을 통해 공간부의 압력을 대기압이하로 조절하여 압착시킨 다음 외부의 접합조건에 관계없이 히트씽크를 반도체소자에 압착시킬 수 있어 히트씽크의 접착력저하를 가져올 가능성이 없으므로 그에 따라 반도체의 동작신뢰성을 확보할 수 있는 장점을 가지고 있다.As described above, the present invention forms a space for injecting a pressure regulating liquid into the bottom surface of the heatsink, and installs a hollow pressure tube with a pressure check valve between the center of the space and the outer surface of the heatsink. After injecting a pressure-controlling liquid into the space and placing it on the upper portion of the semiconductor device, the pressure of the space can be squeezed by adjusting the pressure of the space below atmospheric pressure through a pressure tube, and then the heat sink can be pressed onto the semiconductor device regardless of the external bonding conditions. There is no possibility of reducing the adhesion of the heat sink, so it has the advantage of ensuring the operation reliability of the semiconductor accordingly.
또한, 본 고안에 의하면, 히트씽크와 반도체가 압력차에 의해 히트씽크의 표면거칠기에 따른 열전도도의 손실없이 열전달의 효율성을 극대화하는 효과도 있다.In addition, according to the present invention, the heat sink and the semiconductor have an effect of maximizing the efficiency of heat transfer without loss of thermal conductivity due to the surface roughness of the heat sink due to the pressure difference.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20-2003-0019950U KR200332929Y1 (en) | 2003-06-24 | 2003-06-24 | heat sink device of the semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20-2003-0019950U KR200332929Y1 (en) | 2003-06-24 | 2003-06-24 | heat sink device of the semiconductor element |
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| Publication Number | Publication Date |
|---|---|
| KR200332929Y1 true KR200332929Y1 (en) | 2003-11-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR20-2003-0019950U KR200332929Y1 (en) | 2003-06-24 | 2003-06-24 | heat sink device of the semiconductor element |
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| Country | Link |
|---|---|
| KR (1) | KR200332929Y1 (en) |
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- 2003-06-24 KR KR20-2003-0019950U patent/KR200332929Y1/en not_active IP Right Cessation
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